WO2002004692A3 - Two-stage sputter deposition method - Google Patents
Two-stage sputter deposition method Download PDFInfo
- Publication number
- WO2002004692A3 WO2002004692A3 PCT/US2001/041206 US0141206W WO0204692A3 WO 2002004692 A3 WO2002004692 A3 WO 2002004692A3 US 0141206 W US0141206 W US 0141206W WO 0204692 A3 WO0204692 A3 WO 0204692A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- batch
- conductive material
- conductive layer
- deposition method
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/358—Inductive energy
Abstract
A method and system for depositing a conductive layer on a substrate by serially providing, proximate to the substrate, first and second batches of conductive material, comprising electrically neutral atoms and electrically charge ions with a substantial majority of the conductive material associated with the first batch being electrically neutral atoms and a substantial majority of the conductive material associated with the second batch being electrically charged ions. A first portion of the conductive layer is formed on the substrate from the first batch. The first portion of the conductive layer is formed before the second batch of conductive material is present. Subsequent to formation of the first portion, a second portion of the conductive layer is formed from the second batch of conductive material.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US61300500A | 2000-07-10 | 2000-07-10 | |
US09/613,005 | 2000-07-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002004692A2 WO2002004692A2 (en) | 2002-01-17 |
WO2002004692A3 true WO2002004692A3 (en) | 2002-06-20 |
Family
ID=24455483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/041206 WO2002004692A2 (en) | 2000-07-10 | 2001-06-29 | Two-stage sputter deposition method |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2002004692A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622919A (en) * | 1983-12-29 | 1986-11-18 | Nissin Electric Co., Ltd. | Film forming apparatus |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
US6080285A (en) * | 1998-09-14 | 2000-06-27 | Applied Materials, Inc. | Multiple step ionized metal plasma deposition process for conformal step coverage |
-
2001
- 2001-06-29 WO PCT/US2001/041206 patent/WO2002004692A2/en active Search and Examination
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622919A (en) * | 1983-12-29 | 1986-11-18 | Nissin Electric Co., Ltd. | Film forming apparatus |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
US6080285A (en) * | 1998-09-14 | 2000-06-27 | Applied Materials, Inc. | Multiple step ionized metal plasma deposition process for conformal step coverage |
Also Published As
Publication number | Publication date |
---|---|
WO2002004692A2 (en) | 2002-01-17 |
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