WO2002004692A3 - Two-stage sputter deposition method - Google Patents

Two-stage sputter deposition method

Info

Publication number
WO2002004692A3
WO2002004692A3 PCT/US2001/041206 US0141206W WO2002004692A3 WO 2002004692 A3 WO2002004692 A3 WO 2002004692A3 US 0141206 W US0141206 W US 0141206W WO 2002004692 A3 WO2002004692 A3 WO 2002004692A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
batch
conductive material
portion
conductive layer
substrate
Prior art date
Application number
PCT/US2001/041206
Other languages
French (fr)
Other versions
WO2002004692A2 (en )
Inventor
John C Forster
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354Introduction of auxiliary energy into the plasma
    • C23C14/358Inductive energy

Abstract

A method and system for depositing a conductive layer on a substrate by serially providing, proximate to the substrate, first and second batches of conductive material, comprising electrically neutral atoms and electrically charge ions with a substantial majority of the conductive material associated with the first batch being electrically neutral atoms and a substantial majority of the conductive material associated with the second batch being electrically charged ions. A first portion of the conductive layer is formed on the substrate from the first batch. The first portion of the conductive layer is formed before the second batch of conductive material is present. Subsequent to formation of the first portion, a second portion of the conductive layer is formed from the second batch of conductive material.
PCT/US2001/041206 2000-07-10 2001-06-29 Two-stage sputter deposition method WO2002004692A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US61300500 true 2000-07-10 2000-07-10
US09/613,005 2000-07-10

Publications (2)

Publication Number Publication Date
WO2002004692A2 true WO2002004692A2 (en) 2002-01-17
WO2002004692A3 true true WO2002004692A3 (en) 2002-06-20

Family

ID=24455483

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/041206 WO2002004692A3 (en) 2000-07-10 2001-06-29 Two-stage sputter deposition method

Country Status (1)

Country Link
WO (1) WO2002004692A3 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622919A (en) * 1983-12-29 1986-11-18 Nissin Electric Co., Ltd. Film forming apparatus
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
US6080285A (en) * 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622919A (en) * 1983-12-29 1986-11-18 Nissin Electric Co., Ltd. Film forming apparatus
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
US6080285A (en) * 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage

Also Published As

Publication number Publication date Type
WO2002004692A2 (en) 2002-01-17 application

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