WO2001069651A3 - Cmos imager frame capture - Google Patents

Cmos imager frame capture Download PDF

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Publication number
WO2001069651A3
WO2001069651A3 PCT/CA2001/000344 CA0100344W WO0169651A3 WO 2001069651 A3 WO2001069651 A3 WO 2001069651A3 CA 0100344 W CA0100344 W CA 0100344W WO 0169651 A3 WO0169651 A3 WO 0169651A3
Authority
WO
WIPO (PCT)
Prior art keywords
array
shutter
storage node
aps
incident light
Prior art date
Application number
PCT/CA2001/000344
Other languages
French (fr)
Other versions
WO2001069651A2 (en
Inventor
John Scott-Thomas
Paul Hua
Alain Rivard
Original Assignee
Symagery Microsystems Inc
John Scott-Thomas
Paul Hua
Alain Rivard
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symagery Microsystems Inc, John Scott-Thomas, Paul Hua, Alain Rivard filed Critical Symagery Microsystems Inc
Priority to AU2001242157A priority Critical patent/AU2001242157A1/en
Publication of WO2001069651A2 publication Critical patent/WO2001069651A2/en
Publication of WO2001069651A3 publication Critical patent/WO2001069651A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/532Control of the integration time by controlling global shutters in CMOS SSIS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Abstract

A CMOS imager capable of operating in a frame capture mode. The imager has an array of active pixel sensors (APS) which sense and store incident light levels at discrete points in the array and a shutter for determining the period of time that light is incident on the array. The shutter, such as a controlled liquid crystal, may be positioned on the array surface or some distance from it, allowing incident light to pass through the shutter and impinge on the array, or the shutter may be positioned at an oblique angle to the array to reflect incident light onto the array. When the APS's in the array are 4T or 5T APS's with a sensor node and a storage node, the two nodes may be connected through two or more series connected transistors or a long transistor to prevent sub-threshold currents. Also, the storage node may be connected to the gate of a feedback transistor to raise the voltage on the storage node as the voltage on the storage node degrades.
PCT/CA2001/000344 2000-03-17 2001-03-16 Cmos imager frame capture WO2001069651A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001242157A AU2001242157A1 (en) 2000-03-17 2001-03-16 Cmos imager frame capture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA2,301,345 2000-03-17
CA002301345A CA2301345A1 (en) 2000-03-17 2000-03-17 Frame capture

Publications (2)

Publication Number Publication Date
WO2001069651A2 WO2001069651A2 (en) 2001-09-20
WO2001069651A3 true WO2001069651A3 (en) 2002-08-08

Family

ID=4165559

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2001/000344 WO2001069651A2 (en) 2000-03-17 2001-03-16 Cmos imager frame capture

Country Status (3)

Country Link
AU (1) AU2001242157A1 (en)
CA (1) CA2301345A1 (en)
WO (1) WO2001069651A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304331A (en) * 2003-03-28 2004-10-28 Matsushita Electric Ind Co Ltd Solid state imaging apparatus
US7453514B2 (en) * 2003-05-07 2008-11-18 Pure Digital Technologies, Inc. Digital photography device having a rolling shutter
US7102117B2 (en) 2004-06-08 2006-09-05 Eastman Kodak Company Active pixel sensor cell with integrating varactor and method for using such cell
US7568628B2 (en) 2005-03-11 2009-08-04 Hand Held Products, Inc. Bar code reading device with global electronic shutter control
US7770799B2 (en) 2005-06-03 2010-08-10 Hand Held Products, Inc. Optical reader having reduced specular reflection read failures
US7428378B1 (en) 2005-07-29 2008-09-23 Pure Digital Technologies, Inc. Controlling an exposure time for digital cameras
FR2998964B1 (en) 2012-12-04 2016-01-22 Commissariat Energie Atomique DEVICE FOR MEASURING AND MONITORING THE WAVE FRONT OF A COHERENT LIGHT BEAM

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293975A (en) * 1985-10-21 1987-04-30 Sumitomo Electric Ind Ltd Image pickup device
EP0511644A2 (en) * 1991-05-01 1992-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device
JPH05326903A (en) * 1992-05-15 1993-12-10 Sony Corp Solid-state image sensing element having on-chip-lens structure and photographing device
JPH0799297A (en) * 1993-09-27 1995-04-11 Canon Inc Solid-state image pick-up device
JPH08294059A (en) * 1995-04-21 1996-11-05 Canon Inc Image pickup device
WO1999026408A1 (en) * 1997-11-13 1999-05-27 Foveon, Inc. Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
US6069376A (en) * 1998-03-26 2000-05-30 Foveonics, Inc. Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications
US6133954A (en) * 1996-03-14 2000-10-17 Tritech Microelectronics, Ltd. Integrated circuit color chip with cells with integral color filters including triplets of photodiodes with each having integrated therewith transistors for reading from and writing to the photodiode and methods of manufacture and operation thereof
WO2001078150A1 (en) * 2000-04-07 2001-10-18 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Active cell with analog storage for a cmos technology photosensitive sensor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293975A (en) * 1985-10-21 1987-04-30 Sumitomo Electric Ind Ltd Image pickup device
EP0511644A2 (en) * 1991-05-01 1992-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device
JPH05326903A (en) * 1992-05-15 1993-12-10 Sony Corp Solid-state image sensing element having on-chip-lens structure and photographing device
JPH0799297A (en) * 1993-09-27 1995-04-11 Canon Inc Solid-state image pick-up device
JPH08294059A (en) * 1995-04-21 1996-11-05 Canon Inc Image pickup device
US6133954A (en) * 1996-03-14 2000-10-17 Tritech Microelectronics, Ltd. Integrated circuit color chip with cells with integral color filters including triplets of photodiodes with each having integrated therewith transistors for reading from and writing to the photodiode and methods of manufacture and operation thereof
WO1999026408A1 (en) * 1997-11-13 1999-05-27 Foveon, Inc. Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
US6069376A (en) * 1998-03-26 2000-05-30 Foveonics, Inc. Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications
WO2001078150A1 (en) * 2000-04-07 2001-10-18 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Active cell with analog storage for a cmos technology photosensitive sensor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 294 (E - 544) 22 September 1987 (1987-09-22) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 144 (E - 1521) 10 March 1994 (1994-03-10) *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 07 31 August 1995 (1995-08-31) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03 31 March 1997 (1997-03-31) *
SANDINI G ET AL: "The project SVAVISCA: a space-variant color CMOS sensor", ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS II, ZURICH, SWITZERLAND, 18-19 MAY 1998, vol. 3410, Proceedings of the SPIE - The International Society for Optical Engineering, 1998, SPIE-Int. Soc. Opt. Eng, USA, pages 34 - 45, XP008001166, ISSN: 0277-786X *

Also Published As

Publication number Publication date
AU2001242157A1 (en) 2001-09-24
WO2001069651A2 (en) 2001-09-20
CA2301345A1 (en) 2001-09-17

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