WO2001046741A1 - A micromachined reflective arrangement - Google Patents

A micromachined reflective arrangement Download PDF

Info

Publication number
WO2001046741A1
WO2001046741A1 PCT/US2000/035135 US0035135W WO0146741A1 WO 2001046741 A1 WO2001046741 A1 WO 2001046741A1 US 0035135 W US0035135 W US 0035135W WO 0146741 A1 WO0146741 A1 WO 0146741A1
Authority
WO
WIPO (PCT)
Prior art keywords
respective
mirror component
reflector
barrier
arrangement
Prior art date
Application number
PCT/US2000/035135
Other languages
French (fr)
Inventor
John E. Bowers
Original Assignee
Calient Networks, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US47179699A priority Critical
Priority to US09/471,796 priority
Application filed by Calient Networks, Inc. filed Critical Calient Networks, Inc.
Publication of WO2001046741A1 publication Critical patent/WO2001046741A1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B26/00Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
    • G02B26/08Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating for controlling the direction of light
    • G02B26/0816Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B26/00Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
    • G02B26/08Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating for controlling the direction of light
    • G02B26/10Scanning systems
    • G02B26/101Scanning systems with both horizontal and vertical deflecting means, e.g. raster or XY scanners

Abstract

A micromachined reflective arrangement for manipulating beams of light is described. The micromachined reflective arrangement includes a substrate, first and second adjacent reflector arrangements, and at least a first barrier. Each respective reflector arrangement includes a respective mirror component which is secured for pivotal movement to the substrate. The mirror component has a reflective surface from which a respective beam of light can be reflected in a selected direction relative to the substrate. Each reflector arrangement includes at least a first electrostatic contact to which a voltage can be applied to cause electric field interaction between the first electrostatic contact and a first respective area of the respective mirror component so that the respective mirror component pivots relative to the substrate and the selected direction in which the perspective beam of light is reflected is changed. The first barrier is located between the first and second arrangements. The first barrier restricts electric field interaction between the first electrostatic contact of the first reflector arrangement with the first area of the mirror component of the second reflector arrangement. Pivoting of the mirror component of the second reflector arrangement is thereby restricted when a voltage is applied to the first electrostatic contact of the first reflector arrangement.

Description

A MICROMACHINED REFLECTIVE ARRANGEMENT

Field of the Invention

This invention relates to a micromachined reflective arrangement for manipulating beams of light.

Background of the Invention

One kind of micromachined reflective arrangement typically includes an array of miniature mirrors which are formed on a substrate and which can be individually pivoted by applying voltages to electrostatic contacts located in strategic positions near edges of the mirror component. One problem associated with such a micromachined reflective arrangement is that a voltage applied to one of the electrostatic contacts may cause electric field interference with an adjacent mirror component and thereby cause undesirable pivoting of the adjacent mirror component.

SUMMARY OF THE INVENTION

A micromachined reflective arrangement for manipulating beams of light is described. The micromachined reflective arrangement includes a substrate, first and second adjacent reflector arrangements, and at least a first barrier. Each respective reflector arrangement includes a respective mirror component which is secured for pivotal movement to the substrate. The mirror component has a reflective surface from which a respective beam of light can be reflected in a selected direction relative to the substrate. Each reflector arrangement includes at least a first electrostatic contact to which a voltage can be applied to cause electric field interaction between the first electrostatic contact and a first respective area of the respective mirror component so that the respective mirror component pivots relative to the substrate and the selected direction in which the perspective beam of light is reflected is changed. The first barrier is located between the first and second arrangements. The first barrier restricts electric field interaction between the first electrostatic contact of the first reflector arrangement with the first area of the mirror component of the second reflector arrangement. Pivoting of the mirror component of the second reflector arrangement is thereby restricted when a voltage is applied to the first electrostatic contact of the first reflector arrangement.

Other features and advantages of the present invention will be apparent from the accompanying drawings and from the detailed description that follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is illustrated by way of example and not limited in the figures of the accompanying drawings in which like references indicate similar elements and in which:

Figure 1 with a perspective view of a micromachined reflective arrangement according to one embodiment of the invention;

Figure 2 is a plan view of the micromachined reflective arrangement of Figure 1;

Figure 3 is a cross-sectional side view on 3-3 in Figure 2;

Figure 4 is a cross-sectional side view on 4-4 in Figure 1 ;

Figure 5 is a perspective view of a micromachined reflective arrangement according to another embodiment of the invention; and

Figure 6 is a cross-sectional side view of a micromachined reflective arrangement according to a further embodiment of the invention.

DETAILED DESCRIPTION

Specific embodiments of the invention are now described in more detail. According to one embodiment of the invention, a micromachined reflective arrangement was provided which includes a substrate, a plurality of gimballed mirror components and a barrier structure. The barrier structure is a grid of metal barriers. Each mirror component is located within a respective opening in the grid. The mirror component is gimballed so that it can pivot about two axes which are located at right angles to one another. A respective electrostatic contact is located below each one of four edges of the mirror component. A voltage which is applied to each of the electrostatic contacts creates an electric field which pivots the mirror component. The barrier is located between adjacent mirror components so that an electric field from an electrostatic contact of one of the mirror components does not cause pivoting of an adjacent mirror component. In one embodiment the mirror components are mounted directly to the barrier structure and in another embodiment the mirror components are mounted to separate support structures than the barrier structure. The barrier structure may be grounded although it has been found that pivoting of a mirror component is more easily accomplished if the barrier structure is biased so that a voltage is created thereon equalling the voltage applied to one of the electrostatic contacts.

Figure 1 to Figure 4 of the accompanying drawings illustrate a portion of a micromachined reflective arrangement 10 according to an embodiment of the invention. The micromachined reflective arrangement 10 is a microelectromechanical system (MEMS) device that is manufactured according to conventional MEMS technology. The micromachined reflective arrangement 10 includes a substrate 12, a plurality of adjacent reflector arrangements of which a first reflector arrangement 14A, a second reflector arrangement 14B, and a third reflector arrangement 14C are shown, and a barrier structure 16.

The substrate 12 is a semiconductor substrate such as a silicon substrate with metal lines (not shown) located therein and thereon for providing signals and power to the reflector arrangements 14. The manufacture of a substrate having metal lines formed therein is conventional in the art.

Each reflector arrangement 14 has a rectangular mounting ring 18, a gimballed mirror component 20, and a first to a fourth electrostatic contact 22A- 22D.

The mirror component 20 typically has dimensions of about 0.5 mm by 0.5 mm and is typically made of silicon although other materials such as metals, in particular aluminum, or silicon nitride may be used. The mirror component 20 is located within the mounting ring 18 and is secured to the mounting ring by pivot connections 24 located on opposing sides of the mirror component 20.

The barrier structure 16 is formed on the substrate 12 and includes a plurality of barriers 26. The barriers 26 are located in a grid and are interconnected with one another. The barrier structure 16 is at least in part made of a conductive metal.

Each reflector arrangement 14 is located within a square opening defined by four of the barriers 26. The mounting ring 18 is secured to one barrier 26 by means of a pivot connection 30A and secured to a barrier 26 on an opposing side by means of another pivot connection 30B. Each mirror component 20 is mounted to the substrate 12 via the mounting ring 18 and the barriers 26.

The first and second electrostatic contacts 22A and 22B are located below opposing edges of the mirror component 20. The second and third electrostatic contacts 22C and 22D are respectively located near the other two opposing edges of the mirror component 20.

Each electrostatic contact 22A-22C is connected to a respective signal line 32 located within the substrate 12. A voltage can be applied through a respective one of the signal lines 32 to a respective one of the electrostatic contacts 22. The mirror component 20 is connected through the mounting ring 18 and the barrier structure 16 to a ground line 34 in the substrate 12. A voltage applied to the first electrostatic contact 22A causes electric field interaction between the electrostatic contact 22A and an area near the edge of the mirror component 20 which is closest to the electrostatic contact 22A. The electric field interaction causes pivoting of the mirror component 20 and movement of the edge of the mirror component 20 closest to the first electrostatic contact 22A towards the first electrostatic contact 22A. Pivoting of the mirror component 20 is against a torque developed within the pivot connections 24 and about an axis 36 through the pivot connections 24. Although the mirror component 20 pivots about a fixed axis 36, it should be understood that this need not be the case. Another embodiment may for example make use of a cantilevered beam to which a mirror component is secured Bending of the beam would cause pivoting of the mirror component but not around a fixed point

Similarly, when a voltage is applied to the second electrostatic contact 22B, the mirror component pivots about the axis 36 in a direction opposite to the direction when a voltage is applied to the first electrostatic contact 22A In either case, the mirror component 20 returns to its original position once the voltage is removed from the electrostatic contact 22A or 22B

The third electrostatic contact 22C is located in a position so that, when a voltage is applied thereto, the mounting ring 18 and the mirror component 20 pivot together about the pivot connections 40 and against a torque in the pivot connections 40 Pivoting of the mounting ring 18 and the mirror component 20 is about an axis 38 The axis 38 is located transversely and at right angles to the

Similarly, when a voltage is applied to the fourth electrostatic contact 22D, the mounting ring 18 and the mirror component 20 pivot in a direction opposite to the direction when a voltage is applied to the third electrostatic contact 22C, about the axis 38

The mirror component 20 has a reflective surface from which a beam of light 42 can be reflected in a selected direction 44 relative to the substrate 12 Pivoting of the mirror component 20 causes a change in the selected direction 44 to a selected direction 46 Reflection of the beam of light 42 can be changed by pivoting or gimbalhng the mirror component 20 about either the axis 36 or the axis 38, or about both the axis 36 and the axis 38

The first and second reflector arrangements 14A and 14B are located adjacent one another in a first line on an x-axis and the first and third reflector arrangements 14A and 14C are located adjacent one another in a second line on a y-axis which is transverse and at right angles to the first line The first electrostatic contact 22A of the first reflector arrangement 14A is located adjacent the second electrostatic contact 22B of the second reflector arrangement 14B The fourth electrostatic arrangement 22D of the first electrostatic arrangement 14A is located adjacent the third electrostatic contact 22C of the third reflector arrangement 14C. Although only three reflector arrangements are shown, it should be understood that only a portion of the micromachined reflective arrangement 10 is shown and that the micromachined reflective arrangement 10 includes many more reflector arrangements which are located in an array of multiple rows and multiple columns. In a typical arrangement a total of 144 reflector arrangements in 12 rows and 12 columns are provided, although the total number of reflector arrangements may vary from a few to about 1000 or more.

Figure 3 shows the positioning of the mirror component 20 of the second reflector arrangement 14B which is pivoted when a voltage is applied to the second electrostatic contact 22B thereof to cause pivoting of the mirror component 20. Without a barrier 26 located between the first and second reflector arrangements 14A and 14B, the second electrostatic contact 22B of the second reflector arrangement 14B could cause electric field interaction with an edge 41 of the mirror component 20 of the first reflector arrangement 14A. Such an electric field interaction could cause pivoting of the mirror component 20 of the first reflector arrangement 14A. One analysis shows that the electric field of the second electrostatic contact 22B causes a torque on the mirror component 20 of the first reflector arrangement 14A of about 1.8% of a torque created on the mirror component 20 of the second reflector arrangement 14B if there is no barrier 26. However, because of the barrier 26 between the first and second reflector arrangement 14A and 14B, there is almost no electric field interaction between the second electrostatic contact 22B of the second reflector arrangement 14B and the edge 41 of the mirror component 20 of the first reflector arrangement. The analysis shows that the torque on the mirror component 20 of the first reflector arrangement 14A is only 0.0008% of the torque on the mirror component 20 of the second reflector arrangement 14B. Light reflected from the mirror component 20 of the first reflector arrangement 14A is reflected without being influenced by the operation of the second reflector arrangement 14B. According to the analysis, a 45° pivot of the mirror component 20 of the second reflector arrangement 14B causes only a 0.0004° pivot in the mirror component 20 of the first reflector arrangement 14A.

Similarly, as shown in Figure 4, pivoting of the mirror component 20 of the third reflector arrangement 14C when a voltage is applied to the third electrostatic contact 22C thereof does not influence pivoting of the mirror component 20 of the first reflector arrangement because of a barrier 26 located between the first and third reflector arrangements 14A and 14C. A primary benefit of the barriers 26 is that they are at the same voltage as the mirror components 20 and at a voltage different from any one of the electrostatic contacts 22 when a voltage is applied to the electrostatic contact 22.

One problem with the use of the barriers 26 is that electrical field lines terminate on the barriers 26. Hence, the voltage required to deflect a mirror component 20 increases. One solution is to bias the barrier structure 16 up to the maximum deflection voltage of the electrical contacts 22. All the field lines from the electrical contacts then terminate on the mirror components 20. The mirror components 20 do not deflect because of the voltage of the barrier structure 16 because the barriers are located symmetrically around them.

The barrier structure 16 may be manufactured according to any one of a number of processes. In one process a photoresist layer is spun onto the substrate 12 and etched to define the grid structure of the barrier structure 16. A metal layer is then formed on the remaining photoresist layer by evaporation, electroless plating or any other process. The metal layer is grounded and is typically made of nickel. In another process the grid structure of the barrier structure 16 may be formed out of glass which is subsequently coated with a metal layer.

Figure 5 illustrates a micromachined reflective arrangement 110 according to an alternative embodiment of the invention. The micromachined reflective arrangement 110 includes a substrate 112, first, second, and third reflector arrangements 114A-114C and a barrier structure 16. Each reflector arrangement 114 includes a mounting ring 118 and a mirror component 120 which is pivotally mounted to the mounting ring 118. Each reflector arrangement 114 further includes a support 160. The support 160 is in the form of a square which is located within a square defined by four barriers 126 of the barrier structure 116. The mounting ring 118 is pivotally secured to the support 160. The support 160 and the barrier structure 116 are connected to a ground line 134. The micromachined reflective arrangement 110 is the same as the micromachined reflective arrangement 10 of Figure 1 in all other respects.

Figure 6 of the accompanying drawings illustrates a micromachined reflective arrangement 210 according to a further embodiment of the invention. The micromachined reflective arrangement 210 is the same as the micromachined reflective arrangement 10 of Figure 1 or the micromachined reflective arrangement 110 of Figure 5, except that the micromachined reflective arrangement 210 of Figure 6 further has a conductive metal layer 262 located on a substrate 212. Barriers 226 are formed on and are electrically connected to the layer 262. The micromachined reflective arrangement 210 has first and second reflector arrangements 214A and 214B, as in the embodiments hereinbefore described. Each reflector arrangement 214 includes a mounting ring 218, a mirror component 220 and first and second electrostatic contacts 222A and 222B. Each electrostatic contact 222 is located on an insulated portion 264 which electrically insulates the electrostatic contact 222 from the layer 262.

The layer 262 is grounded and prevents an electric field from passing from one electrostatic arrangement 214B around a base 266 of each barrier 226 to an adjacent reflector arrangement 214A. The adjacent reflector arrangement 214A is isolated from electric field interaction by both the barrier 226, and the layer 262 and the mirror 222 of the reflector arrangement 214B.

In the foregoing specification, the invention has been described with reference to specific exemplary embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the invention as set forth in the appended claims. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.

Claims

CLAIMSWhat is claimed:
1. A micromachined reflective arrangement for manipulating beams of light, comprising: at least first and second gimballed mirror components located next to each other; and a barrier located between the mirror components.
2. The micromachined reflective arrangement of claim 1, further comprising: an electrostatic contact which causes the first mirror component to pivot when a voltage is applied to the electrostatic contact, the barrier restricting electric field interaction between the electrostatic contact and the second mirror component.
3. The micromachined reflective arrangement of claim 1 comprising a plurality of said mirror components and a plurality of barriers, each barrier located between two of the mirror components located next to each other.
4. The micromachined reflective arrangement according to claim 3 wherein the mirror components are located in rows and columns.
5. The micromachined reflective arrangement of claim 1 wherein a voltage can be applied to the barrier.
6. A micromachined reflective arrangement for manipulating beams of light, comprising: a substrate; at least first and second adjacent reflector arrangements, each respective reflector arrangement including a respective mirror component which is secured for pivotal movement to the substrate, the respective mirror component having a reflective surface from which a respective beam of light can be reflected in a selected direction relative to the substrate, and at least a first respective electrostatic contact to which a voltage can be applied to cause electric field interaction between the first respective electrostatic contact and a first respective area of the respective mirror component so that the respective mirror component pivots relative to the substrate and the selected direction in which the respective beam of light is reflected is changed; and at least a first barrier, the first barrier being located between the first and second reflector arrangements, the first barrier restricting electric field interaction between the first electrostatic contact of the first reflector arrangement with the first area of the mirror component of the second reflector arrangement, thereby restricting pivoting of the mirror component of the second reflector arrangement when a voltage is applied to the first electrostatic contact of the first reflector arrangement.
7. The micromachined reflective arrangement according to claim 6 wherein the barrier restricts electric field interaction between the first electrostatic contact of the second reflector arrangement with the area of the mirror component of the first reflector arrangement, thereby restricting pivoting of the mirror component of the first reflector arrangement when a voltage is applied to the first electrostatic contact of the second reflector arrangement.
8. The micromachined reflective arrangement according to claim 6 wherein the voltage applied to the respective first electrostatic contact has a value other than 0 V and the barrier is grounded.
9. The micromachined reflective arrangement according to claim 6 wherein a voltage is applied to the barrier.
10. The micromachined reflective arrangement according to claim 6 wherein the mirror component of one of the reflector arrangements is secured to the barrier.
11. The micromachined reflective arrangement according to claim 10 wherein the first reflector arrangement includes: a respective mounting ring which is secured to the first barrier for pivotal movement about a first respective axis, the respective mirror component being located in the mounting ring and being secured to the respective mounting ring for pivotal movement about a second respective axis which is transverse to the first respective axis to that the mirror component pivots about the second respective axis when the voltage is applied to the first respective electrostatic contact.
12. The micromachined reflective arrangement according to claim 6 wherein each reflector arrangement includes a second respective electrostatic contact to which a voltage can be applied to cause electric field interaction between the second respective electrostatic contact and a second respective area of the mirror component so that the respective mirror component pivots relative to the substrate in a direction different to a direction in which the respective mirror component pivots when the voltage is applied to the respective first electrostatic contact.
13. The micromachined reflective arrangement according to claim 12 comprising: at least a third of said reflector arrangements, the third reflector arrangement being located adjacent the second reflector arrangement, and at least a second barrier, the second barrier being located between the second and third electrostatic arrangements and restricting electric field interaction between the second electrostatic contact of the second reflector arrangement with the first area of the mirror component of the third reflector arrangement, thereby restricting pivoting of the mirror component of the third reflector arrangement when a voltage is applied to the second electrostatic contact of the second reflector arrangement.
14. The micromachined reflective arrangement according to claim 13 wherein the first, second, and third electrostatic arrangements are located in line after one another.
15. The micromachined reflective arrangement according to claim 13 wherein the first, second, and third electrostatic arrangements form part of an array with the first and second electrostatic arrangements located inline on an x-axis of the array and the second and third electrostatic arrangements located inline on a y-axis of the array.
16. The micromachined reflective arrangement according to claim 13 wherein the first and second barriers are electrically connected to one another.
17. The micromachined reflective arrangement according to claim 16 wherein the first and second barriers contact one another.
18. The micromachined reflective arrangement according to claim 6, further comprising a conductive layer over the substrate which restricts an electric field from passing around a base of the barrier.
19. A micromachined reflective arrangement for manipulating beams of light, comprising: a substrate; a plurality of reflector arrangements which are located sequentially one after the other in a first line and sequentially one after the other in a second line which is transverse to the first line, each respective reflector arrangement including a respective mirror component which is secured to the substrate for pivotal movement about a first axis and about a second axis which is transverse to the first axis, at least a first respective electrostatic contact to which a voltage can be applied to cause electric field interaction between the respective first electrostatic contact and a respective first area of the respective mirror component so that the mirror component pivots relative to the substrate about the first axis, and a second electrostatic contact to which a voltage can be applied to cause electric field interaction between the respective second electrostatic contact and a respective second area of the respective mirror component to cause pivoting of the respective mirror component about the second axis, the respective mirror component having a reflective surface from which a beam of light can be reflected in a selected direction relative to the substrate, the selected direction being changed when the mirror component pivots about the first axis or the second axis; and a plurality of barriers, each barrier being located between adjacent ones of the reflector arrangements and each barrier restricting electric field interaction between a selected one of the electrostatic contacts of the reflector arrangements on a first side thereof with an area of a mirror component or a second, opposing side thereof, thereby restricting pivoting of the mirror component of the reflector arrangement on the second side thereof when a voltage is applied to the selected electrostatic contact of the reflector arrangement on the first side thereof.
20. The micromachined reflective arrangement according to claim 19 wherein the barriers form part of the same barrier structure.
21. A method of manipulating beams of light, comprising:
(i) reflecting a respective one of the beams off a respective one of at least first and second mirror components forming part of a micromachined reflective arrangement; and (ii) applying a voltage to an electrostatic contact near the first mirror components so that the first mirror component is pivoted, while a barrier between the first and second mirror components restricts electric field interaction between the electrostatic contact and a second mirror component.
22. The method of claim 21 further comprising: (iii) applying a voltage to the barrier.
23. The method of claim 22 wherein the voltage applied to the barrier has a magnitude which is similar to the voltage applied to the electrostatic contact.
PCT/US2000/035135 1999-12-23 2000-12-22 A micromachined reflective arrangement WO2001046741A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US47179699A true 1999-12-23 1999-12-23
US09/471,796 1999-12-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU22907/01A AU2290701A (en) 1999-12-23 2000-12-22 A micromachined reflective arrangement

Publications (1)

Publication Number Publication Date
WO2001046741A1 true WO2001046741A1 (en) 2001-06-28

Family

ID=23873033

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/035135 WO2001046741A1 (en) 1999-12-23 2000-12-22 A micromachined reflective arrangement

Country Status (2)

Country Link
AU (1) AU2290701A (en)
WO (1) WO2001046741A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6538802B2 (en) 2001-07-31 2003-03-25 Axsun Technologies, Inc System and method for tilt mirror calibration due to capacitive sensor drift
WO2005078509A3 (en) * 2004-02-09 2006-02-16 Chancellor W Brown Mems scanning system with improved performance
US7442918B2 (en) 2004-05-14 2008-10-28 Microvision, Inc. MEMS device having simplified drive
US7636101B2 (en) 2005-02-09 2009-12-22 Microvision, Inc. MEMS scanner adapted to a laser printer
US9821340B2 (en) 2014-07-28 2017-11-21 Kolo Medical Ltd. High displacement ultrasonic transducer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247222A (en) * 1991-11-04 1993-09-21 Engle Craig D Constrained shear mode modulator
US5600383A (en) * 1990-06-29 1997-02-04 Texas Instruments Incorporated Multi-level deformable mirror device with torsion hinges placed in a layer different from the torsion beam layer
US5629790A (en) * 1993-10-18 1997-05-13 Neukermans; Armand P. Micromachined torsional scanner
GB2328312A (en) * 1997-08-14 1999-02-17 John Quentin Phillipps Mirror controlled display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5600383A (en) * 1990-06-29 1997-02-04 Texas Instruments Incorporated Multi-level deformable mirror device with torsion hinges placed in a layer different from the torsion beam layer
US5247222A (en) * 1991-11-04 1993-09-21 Engle Craig D Constrained shear mode modulator
US5629790A (en) * 1993-10-18 1997-05-13 Neukermans; Armand P. Micromachined torsional scanner
GB2328312A (en) * 1997-08-14 1999-02-17 John Quentin Phillipps Mirror controlled display device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6538802B2 (en) 2001-07-31 2003-03-25 Axsun Technologies, Inc System and method for tilt mirror calibration due to capacitive sensor drift
WO2005078509A3 (en) * 2004-02-09 2006-02-16 Chancellor W Brown Mems scanning system with improved performance
US7482730B2 (en) 2004-02-09 2009-01-27 Microvision, Inc. High performance MEMS scanner
US7485485B2 (en) 2004-02-09 2009-02-03 Microvision, Inc. Method and apparatus for making a MEMS scanner
US7442918B2 (en) 2004-05-14 2008-10-28 Microvision, Inc. MEMS device having simplified drive
US7515329B2 (en) 2004-05-14 2009-04-07 Microvision, Inc. Driving a MEMS scanner with a combined actuator drive signal
US7636101B2 (en) 2005-02-09 2009-12-22 Microvision, Inc. MEMS scanner adapted to a laser printer
US9821340B2 (en) 2014-07-28 2017-11-21 Kolo Medical Ltd. High displacement ultrasonic transducer

Also Published As

Publication number Publication date
AU2290701A (en) 2001-07-03

Similar Documents

Publication Publication Date Title
DE60316122T2 (en) Microelectromechanical component and manufacturing method for a microelectromechanical component
US6787384B2 (en) Functional device, method of manufacturing therefor and driver circuit
US6133670A (en) Compact electrostatic comb actuator
US7199916B2 (en) Light modulator device
Pranonsatit et al. Single-pole eight-throw RF MEMS rotary switch
US6507138B1 (en) Very compact, high-stability electrostatic actuator featuring contact-free self-limiting displacement
US6268952B1 (en) Micromechanical light steering optical switch
US7482196B2 (en) Method of manufacturing a semiconductor device having MEMS
US6351329B1 (en) Optical attenuator
US7027284B2 (en) Variable capacitance element
EP1014143A1 (en) A multilevel mechanical grating device
US6744173B2 (en) Multi-layer, self-aligned vertical combdrive electrostatic actuators and fabrication methods
US5844711A (en) Tunable spatial light modulator
US5673139A (en) Microelectromechanical television scanning device and method for making the same
EP1411024B1 (en) 2-D actuator and manufacturing method thereof
US20030011866A1 (en) Compliant mechanism and method of forming same
JP2937977B2 (en) Mobile tracking antenna fabricated by the semiconductor processing techniques
US6872319B2 (en) Process for high yield fabrication of MEMS devices
KR100892931B1 (en) Fabricating mehtod of micro-mirror element
JP3011144B2 (en) Optical scanner and a driving method thereof
KR100661012B1 (en) Contact and contact assembly using the same
US6757092B2 (en) Micro-machine electrostatic actuator, method and system employing same, and fabrication methods thereof
US20030048036A1 (en) MEMS comb-finger actuator
EP1512176B1 (en) Die connected with integrated circuit component
EP2096704B1 (en) Varactor apparatuses and methods

Legal Events

Date Code Title Description
AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase in:

Ref country code: JP