WO2001041963A3 - Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods - Google Patents

Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods Download PDF

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Publication number
WO2001041963A3
WO2001041963A3 PCT/US2000/042454 US0042454W WO0141963A3 WO 2001041963 A3 WO2001041963 A3 WO 2001041963A3 US 0042454 W US0042454 W US 0042454W WO 0141963 A3 WO0141963 A3 WO 0141963A3
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WO
WIPO (PCT)
Prior art keywords
methods
electronic component
systems
application
surface treatment
Prior art date
Application number
PCT/US2000/042454
Other languages
French (fr)
Other versions
WO2001041963A9 (en
WO2001041963A2 (en
WO2001041963A8 (en
Inventor
Thierry Sindzingre
Jason R Uner
Original Assignee
Air Liquide
Thierry Sindzingre
Jason R Uner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide, Thierry Sindzingre, Jason R Uner filed Critical Air Liquide
Priority to AU45111/01A priority Critical patent/AU4511101A/en
Publication of WO2001041963A2 publication Critical patent/WO2001041963A2/en
Publication of WO2001041963A8 publication Critical patent/WO2001041963A8/en
Publication of WO2001041963A3 publication Critical patent/WO2001041963A3/en
Publication of WO2001041963A9 publication Critical patent/WO2001041963A9/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05571Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05573Single external layer
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

This invention is related to a method for effecting metallic bond region modification in electronic components comprising metallic bond regions, the method comprising the steps of: transporting an electronic component having at least one metallic bond region through a primary gas atmosphere comprising unstable or excited gaseous species, the gaseous species being substantially devoid of any electrical charges, the primary gas atmosphere having a pressure ranging from about 0.5 x 105 Pa to about 3.0 x 105 Pa, thereby forming a treated electronic component.
PCT/US2000/042454 1999-12-01 2000-12-01 Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods WO2001041963A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU45111/01A AU4511101A (en) 1999-12-01 2000-12-01 Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16833399P 1999-12-01 1999-12-01
US60/168,333 1999-12-01
US71806600A 2000-11-21 2000-11-21
US09/718,066 2000-11-21

Publications (4)

Publication Number Publication Date
WO2001041963A2 WO2001041963A2 (en) 2001-06-14
WO2001041963A8 WO2001041963A8 (en) 2001-11-15
WO2001041963A3 true WO2001041963A3 (en) 2002-02-28
WO2001041963A9 WO2001041963A9 (en) 2002-08-01

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PCT/US2000/042454 WO2001041963A2 (en) 1999-12-01 2000-12-01 Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8361340B2 (en) 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7897029B2 (en) 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7434719B2 (en) 2005-12-09 2008-10-14 Air Products And Chemicals, Inc. Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment
US8454850B2 (en) 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349095A2 (en) * 1982-03-10 1990-01-03 Hitachi, Ltd. Method of making a metal wire for use in integrated circuits.
DE4404931A1 (en) * 1993-02-16 1994-08-18 Nippon Denso Co Method and device for direct connection of two bodies
US5941448A (en) * 1996-06-07 1999-08-24 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for dry fluxing of metallic surfaces, before soldering or tinning, using an atmosphere which includes water vapor
US6074895A (en) * 1997-09-23 2000-06-13 International Business Machines Corporation Method of forming a flip chip assembly

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349095A2 (en) * 1982-03-10 1990-01-03 Hitachi, Ltd. Method of making a metal wire for use in integrated circuits.
DE4404931A1 (en) * 1993-02-16 1994-08-18 Nippon Denso Co Method and device for direct connection of two bodies
US5941448A (en) * 1996-06-07 1999-08-24 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for dry fluxing of metallic surfaces, before soldering or tinning, using an atmosphere which includes water vapor
US6074895A (en) * 1997-09-23 2000-06-13 International Business Machines Corporation Method of forming a flip chip assembly

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Fluxless soldering under ambient pressure plasma cleaning", ELECTRONIC PACKAGING & PRODUCTION, vol. 35, no. 11, October 1995 (1995-10-01), Newton ( USA ), pages 32, XP000538164 *
NISHIKAWA ET AL.: "Fluxless soldering process technology", PROCEEDINGS 44TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 16 November 1994 (1994-11-16), washington d.c. ( USA ), pages 286 - 292, XP000479158 *
TAKYI ET AL.: "solderability testing in nitrogen atmosphere of plasma treated HASL finish PCBs for fluxless soldering", IEEE/CPMT ELECTRONICS MANUFACTURING TECHNOLOGY SYMPOSIUM, 19 October 1998 (1998-10-19), pages 172 - 186, XP000849781 *

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WO2001041963A2 (en) 2001-06-14
WO2001041963A8 (en) 2001-11-15

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