WO2001036319A8 - Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation - Google Patents

Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation

Info

Publication number
WO2001036319A8
WO2001036319A8 PCT/US2000/031358 US0031358W WO0136319A8 WO 2001036319 A8 WO2001036319 A8 WO 2001036319A8 US 0031358 W US0031358 W US 0031358W WO 0136319 A8 WO0136319 A8 WO 0136319A8
Authority
WO
WIPO (PCT)
Prior art keywords
micro
arrays
ion implantation
reducing variations
cantilever structures
Prior art date
Application number
PCT/US2000/031358
Other languages
French (fr)
Other versions
WO2001036319A1 (en
Inventor
Thomas Stephen Villani
Lawrence A Goodman
Original Assignee
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/712,109 external-priority patent/US6410912B1/en
Application filed by Sarnoff Corp filed Critical Sarnoff Corp
Publication of WO2001036319A1 publication Critical patent/WO2001036319A1/en
Publication of WO2001036319A8 publication Critical patent/WO2001036319A8/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065Mechanical properties
    • B81C1/00666Treatments for controlling internal stress or strain in MEMS structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161Controlling physical properties of the material
    • B81C2201/0163Controlling internal stress of deposited layers
    • B81C2201/0164Controlling internal stress of deposited layers by doping the layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

A method of adjusting the position of a micro-mechanical bi-material cantilever is provided. The bi-material includes a first and a second material and each material has a corresponding thermal expansion coefficient. The method includes implanting ions predominantly into one material of the bi-material to modify internal stress in one of the first and second materials relative to the other material. The deformation of the bi-material is then detected to modulate the implantation of ions thereto.
PCT/US2000/031358 1999-11-15 2000-11-15 Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation WO2001036319A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16546399P 1999-11-15 1999-11-15
US60/165,463 1999-11-15
US09/712,109 2000-11-14
US09/712,109 US6410912B1 (en) 1999-11-15 2000-11-14 Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation

Publications (2)

Publication Number Publication Date
WO2001036319A1 WO2001036319A1 (en) 2001-05-25
WO2001036319A8 true WO2001036319A8 (en) 2001-09-27

Family

ID=26861414

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/031358 WO2001036319A1 (en) 1999-11-15 2000-11-15 Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation

Country Status (1)

Country Link
WO (1) WO2001036319A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103449356B (en) * 2012-05-31 2016-03-30 中国科学院微电子研究所 Stress matching method for bi-material cantilever beam
CN103048051B (en) * 2012-12-17 2014-12-10 中国科学院西安光学精密机械研究所 Infrared detector non-uniformity correction device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
JPS6410140A (en) * 1987-07-02 1989-01-13 Yokogawa Electric Corp Vibration type strain sensor
JP2823276B2 (en) * 1989-03-18 1998-11-11 株式会社東芝 Method for manufacturing X-ray mask and apparatus for controlling internal stress of thin film
US5677090A (en) * 1995-02-23 1997-10-14 Mitsubishi Denki Kabushiki Kaisha Method of making X-ray mask having reduced stress
US5922212A (en) * 1995-06-08 1999-07-13 Nippondenso Co., Ltd Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
US5844238A (en) * 1996-03-27 1998-12-01 David Sarnoff Research Center, Inc. Infrared imager using room temperature capacitance sensor

Also Published As

Publication number Publication date
WO2001036319A1 (en) 2001-05-25

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