WO2001026830A1 - Improvements in drying and cleaning objects using controlled aerosols and gases - Google Patents
Improvements in drying and cleaning objects using controlled aerosols and gases Download PDFInfo
- Publication number
- WO2001026830A1 WO2001026830A1 PCT/US1999/023749 US9923749W WO0126830A1 WO 2001026830 A1 WO2001026830 A1 WO 2001026830A1 US 9923749 W US9923749 W US 9923749W WO 0126830 A1 WO0126830 A1 WO 0126830A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- liquid
- enclosed chamber
- further characterized
- chamber
- selected liquid
- Prior art date
Links
- 239000000443 aerosol Substances 0.000 title claims abstract description 87
- 238000001035 drying Methods 0.000 title claims abstract description 28
- 238000004140 cleaning Methods 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 title claims description 40
- 230000006872 improvement Effects 0.000 title description 8
- 239000007788 liquid Substances 0.000 claims abstract description 265
- 239000002245 particle Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000011261 inert gas Substances 0.000 claims abstract description 52
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000000356 contaminant Substances 0.000 claims abstract description 27
- 238000001914 filtration Methods 0.000 claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 14
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 8
- 235000019441 ethanol Nutrition 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 229960004624 perflexane Drugs 0.000 claims description 4
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 claims description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- -1 silicon nitride hydride Chemical class 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims 5
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000008263 liquid aerosol Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229920000544 Gore-Tex Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/002—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being a degassed liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- This invention relates to improvements in drying and cleaning of manufactured objects, including electronic components, using aerosols created by sonic or ultrasonic means.
- Objects that are being manufactured using processes involving application of liquids and other fluids often require that the parts be thoroughly dried before the manufacturing process can continue.
- doping, photomasking, etching and passivation processes often require application of particular liquids at one stage and removal of liquid residues before the next stage proceeds. Drying and removal of these liquid residues must be complete, but the drying process should, ideally, occur in a relatively short time interval and with expenditure of a minimum of energy and chemicals to implement the drying process.
- the invention provides improvements for a method and associated apparatus for drying and/or cleaning objects by use of a small amount of a low surface tension liquid plus (optionally) brief application of a recyclable cleaning agent.
- the objects to be dried are submerged in a rinse liquid, such as water, in a chamber.
- the rinse liquid surface is covered with a very thin film of a low surface tension selected liquid, such as isopropyl alcohol ("IP A"), formed from an aerosol created by sonic or ultrasonic vibrations of a small stream of the selected liquid.
- IP A isopropyl alcohol
- Suitable liquids include ethyl alcohol, methyl alcohol, tetrahydrofuran, acetone, perfluorohexane, hexane and ether.
- the thin film is continually replenished as needed, and the rinse liquid covering the objects to be dried is slowly drained. As the rinse liquid and thin film drain, the selected liquid briefly contacts the surfaces of the objects and removes water residues by a "chemical squeegeeing" process that is discussed later.
- the objects can be subjected to an additional chamber purge or drying process, using a heated or ambient temperature cleaning fluid, such as dry N2 CO or
- chamber pressure is maintained near or above the external environment pressure as the rinse liquid is drained from the chamber.
- high velocity flow of a supplemental gas provides a controllable expansion of the selected liquid and produces a "fog" with reduced aerosol diameters and improved drying and/or cleaning action.
- controlled flow of a supplemental gas combined with a mask that captures the heavier selected liquid particles (e.g., those with aerosol diameters > 10 ⁇ m), produces a fog with reduced aerosol diameters and improved drying and/or cleaning action.
- the selected liquid is continuously circulated and filtered to continually remove substantially all contaminants with diameters greater than a selected value, such as 0.05 ⁇ m.
- a shutter is used on the delivery system for the selected liquid to suppress or substantially eliminate contaminant particle "spikes" that occur during a start-up phase of the delivery apparatus.
- an improved aerosol particle production system using an inert particle formation surface, is provided that provides improved control of aerosol diameters and allows production of much smaller diameters.
- Process parameters that can be varied to control the process include vibration frequency for creation of aerosol particles from the selected liquid, a representative aerosol particle diameter, delivery rate for the selected liquid, pressure and temperature at which the selected liquid is delivered for creation of the aerosol particles, temperature of the drying fluid used (if any), and choice of the selected liquid and of the drying fluid used (if any).
- the invention requires as little as 1-2 milliliters (ml) of the selected liquid to dry objects in a chamber with volume of 10-20 liters, or smaller or larger, if desired.
- This approach provides several benefits.
- First, the process is carried out at or near room temperature, with little energy expenditure, and does not require use of heated or superheated liquids or gases for drying.
- Second, the process uses a very small amount of the selected liquid in a large volume of rinse liquid (10-20 liters) so that the mixture of rinse liquid and selected liquid can normally be disposed of without the special handling procedures required for hazardous materials.
- a wide variety of inexpensive selected liquids can be used.
- use of a covering film of selected liquid minimizes vapor from the rinse liquid remaining in the chamber after drainage.
- Figures 2A, 2B, 2C and 2D are schematic views of aerosol creating vibrating nozzles suitable for use with the invention.
- Figure 2E is a graphical view of inert gas plenum pressure variations with time that are suitable for use with the Figure 2D apparatus.
- Figure 3 illustrates the apparatus of Figure 1 with the rinse liquid partly drained from the chamber.
- Figure 4 is a flow chart of one embodiment of the method.
- Figure 5 is a schematic view of continuous filtering apparatus for a selected liquid according to the invention.
- Figure 6 is a schematic view of shutter apparatus that may be used with an aerosol production delivery system according to the invention.
- Figure 7 is a schematic view of aerosol production apparatus according to the invention. Description of Best Modes of the Invention
- FIG. 1 illustrates one embodiment of apparatus 10 that is useful for practicing the invention.
- An enclosed chamber 11 is defined by a housing 12 and is provided with a rack (optional) for holding the objects 13A, 13B, 13C, etc. to be dried.
- the objects 13A, 13B, 13C are placed into, and removed from, the chamber 11 through a slidable, hinged or other operable entryway 15 that is part of the housing 12.
- the entryway 15 is closed or engaged, the chamber is enclosed, preferably in an gas-tight manner, and any remaining gas in the chamber can optionally be removed.
- a first port 21 and associated first valve 23 are attached to the housing 12 and are connected to a source 25 of water or other suitable rinse liquid 27 in which the objects 13 A, 13B, 13C are initially submerged.
- a second port 31 and associated second valve 33 are attached to the housing 12 and are connected to a selected liquid source 35, such as a pressurized tank maintained at a pressure of 5-50 psi, of a selected drying liquid or fluid 37 ("selected liquid") that will primarily dry the objects 13 A, 13B, 13C.
- a third port 41 and associated third valve 43 which may coincide with the first port 21 and first valve 23, are attached to the housing 12 and are connected to a first liquid or fluid tank or other suitable first drain acceptor 45 that receives and drains the rinse liquid 27 and absorbed selected liquid 37 from the chamber 11.
- a fourth port 51 and associated fourth valve 53 which may coincide with the second port 31 and second valve 33, are attached to the housing 12 and are connected to a second liquid or fluid tank or other suitable second drain means 55 that receives and drains the selected liquid 37, and aerosol droplets 39 from the selected liquid, from the chamber 11.
- the objects 13A, 13B, 13C are placed in the chamber 11 in a rack or cassette (not shown), the entryway 15 is closed or engaged, the chamber has a pressure at or slightly above atmospheric, and rinse liquid 27 is admitted to the chamber through the first port 21 and first valve 23 so that the objects are fully submerged in the rinse liquid. The first valve 23 is then closed.
- the objects 13 A, 13B, 13C may be partly submerged in the rinse liquid 27 so that a portion of the surfaces of these objects are exposed above the exposed surface of the rinse liquid.
- a small stream of the selected liquid 37 then passes through the second port 31 and second valve 33 and is received by a piezoelectrically driven head 61 and vibrating sonic or ultrasonic nozzle 63 that vibrates at a selected frequency f lying in the range 10 kHz ⁇ f ⁇ 10,000 kHz, and more preferably in the narrower range 20 kHz ⁇ f ⁇ 100 kHz.
- the driven head 61 is connected to and driven by a frequency generator 64 that is preferably located outside the chamber 11 and that permits selection of a vibration frequency fin the indicated range.
- the selected liquid 37 When the selected liquid 37 is present in the vibrating nozzle 63 and the nozzle is vibrating, the selected liquid is converted into a plurality of aerosol droplets 39 that move into the chamber 11 and occupy most or all of an upper portion 11U of the chamber that is not already filled by the rinse liquid 27 and submerged objects 13 A, 13B, 13C.
- FIG 2 A illustrates a suitable drive head 61 A and vibrating nozzle 63 A that can be used with the apparatus shown in Figure 1.
- the vibrating nozzle then "shakes off small droplets 39 of selected liquid 37, which form aerosol droplets in a roughly cylindrical pattern and move into the portion of the chamber 11 above the rinse liquid.
- Figure 2B illustrates another suitable drive head 6 IB and vibrating nozzle 63B, including a thin hollow column 65B therein through which the selected liquid 37 flows.
- a housing 67B surrounds the nozzle 63B and directs a ring of hot or cold inert gas 69B toward the aerosol droplets 39, which move into the chamber in a conical or other desired pattern for enhanced distribution of the aerosol droplets throughout the chamber.
- Many other drive head/vibrating nozzle combinations can also be used here.
- the mean droplet diameter can be varied by varying the diameter(s) d(mem) of the membrane apertures 66 and by varying the frequency f of vibration of the vibrating nozzle 63 A or 63B.
- the selected liquid 37 should be non-reactive with the objects 13 A, 13B, 13C and with the walls of the chamber 11 and should have a substantially lower surface tension than the surface tension of the rinse liquid.
- Suitable selected liquids include isopropyl alcohol, ethyl alcohol, methyl alcohol, tetrahydrofuran, acetone, perfluorohexane, hexane and ether, as well as many other low surface tension liquids and fluids. Use of any of these substances as a selected liquid does not require provision of chamber walls made of specially-resistant materials.
- the selected liquid 37 may be held in the selected liquid source 35 at a pressure of 5-50 psi above atmospheric pressure to facilitate delivery and to suppress the slight volatilization of the selected liquid that might otherwise naturally occur.
- the preferred rinse liquid de-ionized water
- Use of the selected liquid 37 at or near room temperature is preferred here.
- Use of the selected liquid 37 at a substantially elevated temperature can reduce the surface tension of the rinse liquid 27, relative to the surface tension of the selected liquid 37, and thus interfere with the chemical squeegee effect relied upon for this process.
- An aerosol particle is a cluster or collection of molecules of the selected liquid 37 that has not undergone a phase transformation into a vapor form.
- E(aerosol) (1.6 Watts for a typical sonic head, or less than 100 Joules/gm at a flow rate of 2 ml/min) required to convert one gram of the selected liquid 37 into aerosol droplets 39, provided by the vibrating nozzle, is much less than the energy of vaporization E(vapor) required to heat and convert one gram of the selected liquid 37 into its vapor form.
- E(aerosol)/E(vapor) is less than 2 percent.
- the aerosol droplets 39 move into the chamber 11, and many of these droplets settle onto an exposed surface 29 (preferably calm) of the rinse liquid 27 as a thin film 30 having a varying thickness h( aerosol).
- An estimated time required to form this thin film 30 is 40-60 sec.
- a portion of the aerosol droplets 39 that join the film 30 will diffuse into the rinse liquid 27 so that, if this film is not replenished with additional aerosol droplets, the film 30 will quickly and substantially disappear.
- the volume flow rate r(sel) of the selected liquid 37 to the vibrating nozzle 63 is adjusted so that the rate at which aerosol droplets 39 join the film 30 is sufficient to maintain or increase a selected thickness h(aerosol) for the film.
- a prefened range for the film thickness h(aerosol) is 0.5 mm ⁇ h(aerosol) ⁇ 5 mm, but this thickness may be made larger by increasing the volume flow rate r(sel).
- a volume flow rate r2 1-2 ml/min is high enough.
- the time required to drain the chamber at a drain rate of 5 mm/sec is about 20-40 sec for a semiconductor wafer 10-20 cm in diameter.
- very little of the selected liquid 37 is absorbed or diffuses into the rinse liquid 27 in the course of the time interval (60-100 sec) required for establishment of the film and draining of the chamber.
- the selected liquid source 35 may have a relatively small volume, as little as 20-25 ml, and the selected liquid source 35 may be located at a considerable distance, such as 1-4 meters, from the chamber 11. This enhances the safety of the process, where a selected liquid is used that has a low flash point or that can initiate an explosion.
- a very small amount of the selected liquid 37 will vaporize naturally at the process temperature, preferably room temperature, based on the equilibrium vapor pressure coefficient of the selected liquid at that temperature. This vaporized portion should be relatively small in the enclosed chamber 11 at room temperature, and the vapor portion of the selected liquid 37 will quickly come to equilibrium with the liquid film and aerosol portions of the selected liquid 37.
- the volume flow rate r(sel) of the selected liquid 37 may be adjusted toward higher or lowers values as draining of the rinse liquid 27 (and absorbed aerosol particles 39) proceeds.
- FIG. 2C illustrates improved ultrasonic drive apparatus for delivery of a selected liquid, 117 and 119 (e.g.. IPA at room temperature) in aerosol form, for cleaning and/or drying an object.
- a first fluid-carrying line 101 delivers a selected liquid from a selected liquid source 103 to a first end of an axial chamber 105 that is defined by an approximately cylindrical ultrasonic nozzle 107 that vibrates at a frequency f lying in a selected frequency range, such as 10 kHz ⁇ f ⁇ 10,000 kHz.
- the nozzle 107 is driven by an ultrasonic drive head 109, which may include several current-carrying coils. As the direction of coil current is reversed repeatedly, the nozzle 107, which may include a piezoelectric material, is set into vibration by the coil current reversal and "shakes off small aerosol particles of the selected liquid.
- the apparatus in Figure 2C also includes a second fluid-carrying line 111, fed by an inert gas source 113, that delivers gas to an inert gas plenum 114, with a plenum wall
- the fluid- carrying line 111 preferably delivers inert gas, such as N2 or CO, to the plenum 114 at about room temperature at a flow rate of 2-10 liters per minute (LPM). A portion or all of the inert gas is expelled from the plenum 114 at the plenum aperture 116 in a selected (outward) direction, creating a locally lowered total gas pressure that results in an expanded flow 117 of the selected liquid aerosol particles.
- inert gas such as N2 or CO
- Figure 2D also illustrates improved ultrasonic drive apparatus for delivery of a selected liquid, 137 and 139, in aerosol form, for cleaning and/or drying an object.
- a first fluid-carrying line 121, a selected liquid source 123, an axial chamber 125 defined by an approximately cylindrical ultrasonic nozzle 127, an ultrasonic drive head 129, a second fluid-carrying line 131, an inert gas source 133, an inert gas plenum 134, a plenum wall 135, and a plenum aperture 136 serve the same purposes as the respective components 101, 103, 105, 107, 109, 111, 113, 114, 115, and 116 in the apparatus of
- Figure 2C The embodiment shown in Figure 2D will produce aerosol particles 137 with a larger associated cone angle G c r j than would occur in the absence of the inert gas.
- the inert gas is expelled from the plenum aperture 136, either continuously at roughly constant plenum pressure, or at a plenum pressure p(plenum) that varies roughly periodically with time t between a minimum pressure value and a maximum pressure value, as indicated in Figure 2E.
- This pressure variation creates inert gas pressure waves 141 with an associated pressure gradient around the plenum aperture
- Aerosol particles 139 that are produced with a central region near an axis of the nozzle
- the surfaces 14 A, 14B, 14C of the objects 13A, 13B, 13C are increasingly exposed above the exposed rinse liquid surface 29 and overlying film 30, and aerosol droplets 39 in the upper part of the chamber 11U settle onto these exposed surfaces 14A, 14B, 14C, as shown in Figure 3.
- a portion of the film 30 of the selected liquid 37 may settle on the exposed portions of the object surfaces 14A, 14B, 14C, rather than moving with the rinse liquid 27 toward the third port 41.
- the selected liquid 37 is chosen to have a much smaller surface tension D(sel) than the surface tension D (rinse) of the rinse liquid 27.
- IP A isopropyl alcohol
- the selected liquid 37 in the films 16A, 16B, 16C displaces most or all of the rinse liquid 27 that remains on the exposed portions of the object surfaces 14A, 14B, 14C, in large part because the surface tension D(sel) of the selected liquid 37 is much smaller than the surface tension D (rinse) of the rinse liquid 27.
- the rinse liquid 27 that is displaced by the selected liquid runs down the exposed surfaces 14A, 14B, 14C of the objects 13A, 13B, 13C and is drained away with the bulk of the rinse liquid in the chamber.
- the selected liquid 37 that forms a film on the surfaces 14A, 14B, 14C of the objects 13 A, 13B, 13C also runs down these surfaces and is drained away with the bulk of the rinse liquid 27.
- the films 16A, 16B, 16C of selected liquid 37 thus act as "chemical squeegees" in removing rinse liquid 27 and selected liquid 37 from the exposed surfaces 14A, 14B, 14C of the objects 13A, 13B, 13C. This chemical squeegeeing of the objects' exposed surfaces 14 A, 14B, 14C has another benefit.
- hot or room temperature dry nitrogen N2, carbon monoxide CO, carbon dioxide CO2 or other inert gas may be admitted into the chamber 11 through a fifth port 71 and associated fifth valve 73 to purge the chamber 11 and/or clean any remaining substances from the exposed surfaces 14A, 14B, 14C of the objects 13A, 13B, 13C.
- the hot purge gas is received by the chamber 11 from a purge gas tank 75 and is removed through a sixth port 81 and associated sixth valve 83 that may coincide with the fifth port 71 and fifth valve 73, respectively.
- the hot purge gas is received from the chamber 11 in a spent purge gas tank 85 for recycling, processing or disposal. This portion of the process, if included, may require another 30-60 sec.
- Figure 4 is a flow chart indicating the process steps to be taken in one embodiment of the invention.
- the objects 13A, 13B, 13C ( Figures 1 and 3) to be dried and/or cleaned are placed into the chamber, and the chamber is closed.
- rinse liquid 27 is admitted into the chamber to partially or (preferably) fully submerge the objects.
- aerosol droplets of the selected liquid 37 are formed within the chamber, and a film of the selected liquid is formed and maintained on the exposed surface of the rinse liquid.
- step 97 the rinse liquid 27 and any absorbed selected liquid 37 are slowly drained from the chamber, to ultimately expose the surfaces of the objects to the aerosol droplets and to allow films of the selected liquid to form on the objects surfaces; optionally, the chamber pressure is maintained near or above the external environment pressure.
- step 99 the films of selected liquid on the objects' surfaces perform chemically squeegeeing to remove any remaining rinse liquid 27 and remaining selected liquid 37 and contaminants from the objects' surfaces.
- step 101 optionalal
- any remaining selected liquid 37 and rinse liquid 27 are removed from the chamber.
- step 103 a purge gas is passed through the chamber to remove any remaining gas and/or liquid particles from the chamber.
- the objects, now dried and/or cleaned, can be removed from the chamber or may be further processed in the chamber.
- a reservoir 121 of a substantially inert displacement gas 122 such as N2, CO or CO2, is optionally provided and is in fluid communication with the chamber 11.
- the inert gas 122 in the reservoir 121 passes through a port 123 and an associated valve and pressure control device 125 to enter the chamber 11.
- the valve and pressure control device 125 senses the changing pressure that is created within the chamber 11 as the rinse liquid 27 is drained from the chamber using the port and valve 41 and 43.
- a chamber pressure p that is somewhat higher than the local external pressure p(external) is preferred here so that some of the inert gas 122 will tend to move out of the chamber 11 into the external environment and will discourage in-flow of gases from the external environment, if the chamber is not sufficiently air-tight.
- the pressure p maintained within the chamber 11 may be somewhat less than p(external), perhaps as low as 0.8p(external), and still discourage entry of gas from the external environment into the chamber.
- the inert gas 122 may be removed from the chamber to an inert gas reservoir 127 before the next step is taken in processing the selected objects.
- the valve and pressure control device 125 need not sense the internal pressure of the chamber 11.
- valve and pressure control device 125 admits insert gas 122 at a programmed volume flow rate r3 from the inert gas reservoir 121, where the rate r3 is sufficient to maintain the internal pressure p « p(external) or higher within the chamber 11 as the rinse liquid 27 drains from the chamber.
- the temperature T of the inert gas 122 is preferably at or near the temperature of the rinse liquid, which is usually room temperature or somewhat colder or somewhat warmer.
- the purge gas reservoir 75 may also serve as the inert gas reservoir 121 , with inclusion of the valve and pressure control device 125.
- Figure 5 illustrates improved flow filtering apparatus that is intended to keep the selected liquid (IPA or other) relatively free from contaminants with sizes above a relatively small diameter.
- a selected liquid e.g., IPA or other
- a positive displacement pump 157 having a volume flow rate that is preferably in the range 1-10 LPM at room temperature.
- the first filter 159 removes most or all contaminant particles in the selected liquid with diameters greater than the first filter aperture diameter.
- the second filter 161 removes most or all contaminant particles in the selected liquid with diameters greater than the second filter aperture diameter, and more particularly removes any remaining contaminant particles with diameters greater than the first filter aperture diameter.
- one of the first and second filters, 159 and 161 can be deleted.
- the selected liquid then passes along the first line 153 to a junction 163 where this first line intersects with a second fluid-carrying line 165 and with a third fluid- carrying line 167.
- Selected liquid in the second line 165 passes through a second check valve 169 and is returned to the SL reservoir 151.
- Selected liquid in the third line 167 is then received by a filtered
- the SL reservoir 179 that is pressurized by inert gas from an inert gas line 181 that is fed by an inert gas source 183, which may hold N2, CO or another suitable inert gas.
- the thrice-filtered selected liquid then passes through a vibrating head and nozzle 185 for cleaning and/or drying of an object.
- the SL reservoir 151 has a pressure sensor and regulator 187 that uses pressure feedback to maintain approximately constant pressure in this reservoir.
- Each of the three filters, 159, 161 and 175, is preferably a track-etched polycarbonate filter.
- the first and second fluid-carrying lines 153 and 165 are preferably teflon tubes with an inside diameter in the range 0.125-0.25 mm.
- the third fluid-carrying line 167 is preferably a teflon tube with an inside diameter in the range 0.1-0.2 mm.
- At least one of the second and third check valves 169 and 171 is open at any time so that the filtering action never stops and selected liquid circulates across two or three of the filters substantially continuously. Most of the contaminant particles in the selected liquid are removed in the first line-second line fluid route. Additional contaminant particles, if any are present, are removed by the first line-third line fluid route, which acts as a shunt to remove a selected fraction of the laready-filtered selected liquid for further filtering.
- Figure 6 illustrates apparatus for suppressing or eliminating a "spike" of contaminant particles that appears when selected liquid (SL) delivery apparatus is activated after a substantial period of inactivity.
- An SL reservoir 191 is fed by an SL fluid line 193 from an SL source 195.
- the SL reservoir 191 is also pressurized by inert gas received in an inert gas line 197 from an inert gas source 199.
- the SL reservoir has a nozzle or other liquid outlet terminal 201 to allow SL to be delivered at a controllable rate for cleaning and/or drying of an object.
- a liquid flow mask 203 having an open section 205 and an opaque section 207, is located adjacent to the nozzle 201 and is movable in a direction transverse to the normal direction of SL flow by a motor or other manual or automatic mask movement mechanism 209.
- the redirected SL liquid is passed through one or more SL filters 208 before returning to the SL source 195.
- the mask 203 acts in a manner similar to the action of a focal plane shutter in a camera and is preferably fabricated from a relatively inert material such as Gore-Tex. Any other means of liquid redirection can be used to direct an initial amount of SL through a (special) SL filter to remove most or all of a "spike" of contaminant particles that appears when the system is first activated.
- the opaque portion of the mask 203 is positioned across the nozzle 201, in order to interfere with and redirect the initial SL flow.
- the SL that flows initially is likely to have a larger-than-normal number of contaminant particles therein, which may have accumulated in the SL delivery apparatus (SL reservoir, SL delivery lines, etc.) during the preceding period of inactivity.
- Selected liquid in this initial SL flow is preferably redirected through a separate liquid filtering system (not shown in Figure 6) to remove the larger-than-normal number of contaminant particles from the liquid.
- the mask 203 is moved transversely by the movement mechanism 209 to position the open section 207 of the mask 203 in the normal path of SL flow from the nozzle 201.
- the SL is permitted to flow from the SL reservoir 191, through the nozzle 201 and through the normal channel(s) for SL delivery for cleaning and/or drying of an object.
- Figure 7 illustrates improved aerosol production apparatus. Relatively large drops
- 211 of a selected liquid (SL) from an SL reservoir 213 are delivered by one or more fluid-carrying lines 215 and deposited on an exposed surface of a suitable solid receptor
- the fluid-carrying line 215 preferably allows an SL flow rate of 0.1-10 ml/min.
- the size of the SL drops may be as small as permitted by the surface tension of the SL, or larger if desired.
- the solid receptor 217 is preferably a chemically inert material, such as silicon nitride (Si ⁇ N ⁇ , silicon nitride hydride (Si ⁇ N y H z ) or any other suitable material.
- the solid receptor 217 is contiguous, on one side or at the bottom, to a piezoelectric (PZT) crystal 219.
- the PZT crystal 219 is electrically driven by two or more electrodes 221 A and 22 IB that are in turn driven by an alternating voltage device 223.
- the alternating voltage device 223 provides alternating voltage at one or more frequencies in the range 20-5,000 kHz, and more preferably in the range 20-750 kHz.
- the solid receptor 217 vibrates, and a deposited drop of SL 211 is separated into a plurality of smaller (aerosol) particles 225 with diameters preferably in the range 1-50 ⁇ m. These smaller aerosol particles 225 are thrown off of, or otherwise depart from, the solid receptor 217 and are subsequently used for cleaning and/or drying an object. As the drive frequency f for the PZT crystal 219 is increased, the average diameter of the aerosol particles produced by this apparatus should decrease.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Coating Apparatus (AREA)
- Nozzles (AREA)
- Drying Of Solid Materials (AREA)
- Special Spraying Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/090,453 US5968285A (en) | 1995-06-07 | 1998-06-04 | Methods for drying and cleaning of objects using aerosols and inert gases |
JP2001529882A JP2003517917A (en) | 1999-10-12 | 1999-10-12 | Improved object drying and cleaning process using controlled spray and gas quality |
CNB998170127A CN1276804C (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
KR1020027004730A KR100604458B1 (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
PCT/US1999/023749 WO2001026830A1 (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
AU11104/00A AU1110400A (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
EP99954861A EP1235653A1 (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1999/023749 WO2001026830A1 (en) | 1999-10-12 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001026830A1 true WO2001026830A1 (en) | 2001-04-19 |
Family
ID=22273794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/023749 WO2001026830A1 (en) | 1995-06-07 | 1999-10-12 | Improvements in drying and cleaning objects using controlled aerosols and gases |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1235653A1 (en) |
JP (1) | JP2003517917A (en) |
KR (1) | KR100604458B1 (en) |
CN (1) | CN1276804C (en) |
AU (1) | AU1110400A (en) |
WO (1) | WO2001026830A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006063936A1 (en) * | 2004-12-14 | 2006-06-22 | Sez Ag | Apparatus and method for drying disk-shaped substrates |
JP2006518096A (en) * | 2002-10-29 | 2006-08-03 | ノヴォ リサーチ インコーポレイテッド | Apparatus and method for cleaning semiconductor wafer surface using ozone |
DE102006037087A1 (en) * | 2006-08-07 | 2008-02-14 | Accel Instruments Gmbh | Cleaning inner surfaces of high frequency resonators, employs surface tension-reducing drying fluid, in which cleaning fluid is soluble |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4007980B2 (en) * | 2004-07-15 | 2007-11-14 | エス・イー・エス株式会社 | Substrate drying method and substrate drying apparatus |
JP4807045B2 (en) * | 2005-11-21 | 2011-11-02 | パナソニック電工株式会社 | Range hood with mist cleaning device |
JP5261077B2 (en) | 2008-08-29 | 2013-08-14 | 大日本スクリーン製造株式会社 | Substrate cleaning method and substrate cleaning apparatus |
CN102233310A (en) * | 2010-04-20 | 2011-11-09 | 鸿富锦精密工业(深圳)有限公司 | Immersion type coating device |
US9174249B2 (en) * | 2012-12-12 | 2015-11-03 | Lam Research Corporation | Ultrasonic cleaning method and apparatus therefore |
JP5680699B2 (en) * | 2013-04-25 | 2015-03-04 | 株式会社Screenホールディングス | Substrate cleaning method and substrate cleaning apparatus |
JP2020203269A (en) * | 2019-06-18 | 2020-12-24 | 合同会社アイル・Mtt | Bubble scattering inhibitor and method for using the same |
CN117153713B (en) * | 2023-10-25 | 2024-02-02 | 江苏惠达电子科技有限责任公司 | Method, system and equipment control method for detecting residual pollutants of frequency components |
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-
1999
- 1999-10-12 WO PCT/US1999/023749 patent/WO2001026830A1/en active IP Right Grant
- 1999-10-12 KR KR1020027004730A patent/KR100604458B1/en not_active IP Right Cessation
- 1999-10-12 CN CNB998170127A patent/CN1276804C/en not_active Expired - Fee Related
- 1999-10-12 JP JP2001529882A patent/JP2003517917A/en active Pending
- 1999-10-12 AU AU11104/00A patent/AU1110400A/en not_active Abandoned
- 1999-10-12 EP EP99954861A patent/EP1235653A1/en not_active Withdrawn
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US4982753A (en) * | 1983-07-26 | 1991-01-08 | National Semiconductor Corporation | Wafer etching, cleaning and stripping apparatus |
US4850534A (en) * | 1987-05-30 | 1989-07-25 | Tdk Corporation | Ultrasonic wave nebulizer |
US5186192A (en) * | 1990-12-14 | 1993-02-16 | Shin-Etsu Handotai Co., Ltd. | Apparatus for cleaning silicon wafer |
US5520744A (en) * | 1993-05-17 | 1996-05-28 | Dainippon Screen Manufacturing Co., Ltd. | Device for rinsing and drying substrate |
US5571337A (en) * | 1994-11-14 | 1996-11-05 | Yieldup International | Method for cleaning and drying a semiconductor wafer |
US5826601A (en) * | 1995-03-30 | 1998-10-27 | Dainippon Screen Mfg., Co. | Treating liquid replacing method, substrate treating method and substrate treating apparatus |
US5934566A (en) * | 1995-05-26 | 1999-08-10 | Mitsubishi Denki Kabushiki Kaisha | Washing apparatus and washing method |
US5685086A (en) * | 1995-06-07 | 1997-11-11 | Ferrell; Gary W. | Method and apparatus for drying objects using aerosols |
US5896875A (en) * | 1995-09-01 | 1999-04-27 | Matsushita Electronics Corporation | Equipment for cleaning, etching and drying semiconductor wafer and its using method |
US5954911A (en) * | 1995-10-12 | 1999-09-21 | Semitool, Inc. | Semiconductor processing using vapor mixtures |
US5927306A (en) * | 1996-11-25 | 1999-07-27 | Dainippon Screen Mfg. Co., Ltd. | Ultrasonic vibrator, ultrasonic cleaning nozzle, ultrasonic cleaning device, substrate cleaning device, substrate cleaning treatment system and ultrasonic cleaning nozzle manufacturing method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006518096A (en) * | 2002-10-29 | 2006-08-03 | ノヴォ リサーチ インコーポレイテッド | Apparatus and method for cleaning semiconductor wafer surface using ozone |
WO2006063936A1 (en) * | 2004-12-14 | 2006-06-22 | Sez Ag | Apparatus and method for drying disk-shaped substrates |
DE102006037087A1 (en) * | 2006-08-07 | 2008-02-14 | Accel Instruments Gmbh | Cleaning inner surfaces of high frequency resonators, employs surface tension-reducing drying fluid, in which cleaning fluid is soluble |
Also Published As
Publication number | Publication date |
---|---|
CN1276804C (en) | 2006-09-27 |
EP1235653A1 (en) | 2002-09-04 |
CN1398206A (en) | 2003-02-19 |
KR100604458B1 (en) | 2006-07-26 |
JP2003517917A (en) | 2003-06-03 |
KR20020068034A (en) | 2002-08-24 |
AU1110400A (en) | 2001-04-23 |
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