WO2001013481A1 - Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel) - Google Patents

Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel) Download PDF

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Publication number
WO2001013481A1
WO2001013481A1 PCT/US2000/022062 US0022062W WO0113481A1 WO 2001013481 A1 WO2001013481 A1 WO 2001013481A1 US 0022062 W US0022062 W US 0022062W WO 0113481 A1 WO0113481 A1 WO 0113481A1
Authority
WO
WIPO (PCT)
Prior art keywords
vcsel
output
modulating
tunable
optically pumped
Prior art date
Application number
PCT/US2000/022062
Other languages
English (en)
Other versions
WO2001013481A9 (fr
Inventor
Daryoosh Vakhshoori
Parviz Tayebati
Original Assignee
Coretek, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Coretek, Inc. filed Critical Coretek, Inc.
Priority to CA002381773A priority Critical patent/CA2381773A1/fr
Priority to EP00957394A priority patent/EP1218991A1/fr
Publication of WO2001013481A1 publication Critical patent/WO2001013481A1/fr
Publication of WO2001013481A9 publication Critical patent/WO2001013481A9/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094076—Pulsed or modulated pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Definitions

  • This invention relates to photonic devices in general, and more particularly to tunable lasers.
  • VCSEL 5 tunable vertical cavity surface emitting laser
  • VCSEL 5 generally comprises a substrate 10, a bottom mirror 20 mounted to the top of substrate 10, a gam medium (or "active region") 23 mounted to the top of bottom mirror 20, a bottom electrode 15 mounted to the top of gain medium 23, a thin support 25 atop bottom electrode 15, a top electrode 30 fixed to the underside of thin support 25, a reinforcer 35 fixed to the outside perimeter of thin rupport 25, and a confocal top mirror 40 set atop thin support 25, with an air cavity 45 being formed between bottom mirror 20 and top mirror 40.
  • gam medium or "active region”
  • the present invention is directed to VCSEL' s which are constructed so as to have their active region stimulated by optical pumping.
  • the primary object of the present invention is to provide a novel method for modulating the output of an optically pumped, tunable VCSEL.
  • Another object of the present invention is to provide a novel method for modulating the output of an optically pumped, tunable VCSEL by modulating the pump laser.
  • Yet another object of the present invention is to provide a novel method for modulating the output of an optically pumped, tunable VCSEL by modulating a voltage applied across the active region.
  • a method for modulating the output of an optically pumped, tunable VCSEL comprising the steps of: (1) optically pumping the VCSEL with a pump laser so as to cause the VCSEL to generate an output; and (2) modulating the output light power of the pump laser so as to modulate the carrier population in the VCSEL' s active region whereby to modulate the output of the VCSEL.
  • a method for modulating the output of an optically pumped, tunable VCSEL comprising the steps of: (1) optically pumping the VCSEL with a pump laser so as to cause the VCSEL to generate an output; and (2) applying a voltage across the active region so as to alter the optical power circulating in the VCSEL' s cavity, whereby to increase or decrease the output power of the VCSEL.
  • Fig. 1 is a schematic side view of a tunable VCSEL
  • Fig. 2 is a schematic diagram showing the output of an optically pumped, tunable VCSEL being modulated by modulating the pump laser
  • Fig. 3 is a schematic diagram showing the output of an optically pumped, tunable VCSEL being modulated by modulating a voltage applied, across the VCSEL' s active region.
  • the present invention provides two ways for modulating the output of an optically pumped, tunable vertical cavity surface emitting laser (VCSEL) .
  • VCSEL vertical cavity surface emitting laser
  • the pump laser is directly modulated in the manner shown in Fig. 2. More particularly, the pump laser 100 is imaged on the active region of VCSEL 5.
  • the pump laser can be of the 980 nm or 1400-1500 nm variety, and is typically of edge-emitting geometry.
  • the carrier population in the VCSEL' s active region is also modulated. This in turn results in modulation of the output of VCSEL 5.
  • the P-N junction of the VCSEL' s active region is either forward or reverse biased to modulate the output of VCSEL 5.
  • This is schematically illustrated in Fig. 3. More particularly, in this approach, the pump laser 100 is operated in CW mode and biases the. VCSEL' s output to a DC level. Then the application of the voltage V 2 -V, across the active region will add to, or subtract from, the optical power circulating in the VCSEL' s cavity, resulting in an increase, or decrease, in the output power of VCSEL 5.

Abstract

L'invention concerne un procédé de modulation de la sortie d'un VCSEL (5) accordable, à pompage optique. L'invention concerne deux approches différentes. Selon la première approche, la sortie du VCSEL (5) est modulée par la modulation du laser de pompage (100). Selon la seconde approche, la sortie du VCSEL (5) est modulée par la modulation d'une tension appliquée dans la région active.
PCT/US2000/022062 1999-08-12 2000-08-11 Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel) WO2001013481A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CA002381773A CA2381773A1 (fr) 1999-08-12 2000-08-11 Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel)
EP00957394A EP1218991A1 (fr) 1999-08-12 2000-08-11 Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14862999P 1999-08-12 1999-08-12
US60/148,629 1999-08-12

Publications (2)

Publication Number Publication Date
WO2001013481A1 true WO2001013481A1 (fr) 2001-02-22
WO2001013481A9 WO2001013481A9 (fr) 2002-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/022062 WO2001013481A1 (fr) 1999-08-12 2000-08-11 Procede de modulation d'un laser a cavite verticale et a emission par la surface accordable, a pompage optique (vcsel)

Country Status (3)

Country Link
EP (1) EP1218991A1 (fr)
CA (1) CA2381773A1 (fr)
WO (1) WO2001013481A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1341274A1 (fr) * 2002-03-01 2003-09-03 GSI Lumonics Ltd. Dispositif laser
DE10214120A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
US6639928B2 (en) * 2001-04-25 2003-10-28 Commissariat A L'energie Atomique - Cea Optic device comprising a plurality of resonant cavities of different lengths associated with different wavelengths
DE10223540A1 (de) * 2002-05-27 2003-12-18 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US6947466B2 (en) 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
US6963594B2 (en) * 2002-10-16 2005-11-08 Eastman Kodak Company Organic laser cavity device having incoherent light as a pumping source
US7433374B2 (en) 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933444A (en) * 1995-05-12 1999-08-03 Commissariat A L'energie Atomique Monolithic semiconductor infrared emitter pumped by a switched solid microlaser
US5991318A (en) * 1998-10-26 1999-11-23 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser
US6088376A (en) * 1998-03-16 2000-07-11 California Institute Of Technology Vertical-cavity-surface-emitting semiconductor devices with fiber-coupled optical cavity

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933444A (en) * 1995-05-12 1999-08-03 Commissariat A L'energie Atomique Monolithic semiconductor infrared emitter pumped by a switched solid microlaser
US6088376A (en) * 1998-03-16 2000-07-11 California Institute Of Technology Vertical-cavity-surface-emitting semiconductor devices with fiber-coupled optical cavity
US5991318A (en) * 1998-10-26 1999-11-23 Coherent, Inc. Intracavity frequency-converted optically-pumped semiconductor laser

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6639928B2 (en) * 2001-04-25 2003-10-28 Commissariat A L'energie Atomique - Cea Optic device comprising a plurality of resonant cavities of different lengths associated with different wavelengths
EP1341274A1 (fr) * 2002-03-01 2003-09-03 GSI Lumonics Ltd. Dispositif laser
DE10214120A1 (de) * 2002-03-28 2003-10-23 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
US6947460B2 (en) 2002-03-28 2005-09-20 Osram Gmbh Optically pumpable surface-emitting semiconductor laser device
DE10214120B4 (de) * 2002-03-28 2007-06-06 Osram Opto Semiconductors Gmbh Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung
DE10223540A1 (de) * 2002-05-27 2003-12-18 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US6973113B2 (en) 2002-05-27 2005-12-06 Osram Gmbh Optically pumped semiconductor laser device
DE10223540B4 (de) * 2002-05-27 2006-12-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US6963594B2 (en) * 2002-10-16 2005-11-08 Eastman Kodak Company Organic laser cavity device having incoherent light as a pumping source
US6947466B2 (en) 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
US7300809B2 (en) 2004-01-29 2007-11-27 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
US7433374B2 (en) 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers

Also Published As

Publication number Publication date
EP1218991A1 (fr) 2002-07-03
CA2381773A1 (fr) 2001-02-22
WO2001013481A9 (fr) 2002-07-11

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