WO2001006561A3 - Ferroelectric memory capacitor - Google Patents
Ferroelectric memory capacitor Download PDFInfo
- Publication number
- WO2001006561A3 WO2001006561A3 PCT/DE2000/002184 DE0002184W WO0106561A3 WO 2001006561 A3 WO2001006561 A3 WO 2001006561A3 DE 0002184 W DE0002184 W DE 0002184W WO 0106561 A3 WO0106561 A3 WO 0106561A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory capacitor
- ferroelectric memory
- dielectric
- iridium
- ruthenium
- Prior art date
Links
- 230000015654 memory Effects 0.000 title abstract 4
- 239000003990 capacitor Substances 0.000 title abstract 3
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 abstract 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention relates to a memory capacitor for use in DRAM memories which has electrodes consisting of ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir) or iridium dioxide (IrO2) and a dielectric consisting of barium strontium titanate (BST). In order to obtain the smallest possible leakage currents, the dielectric is coated on both sides with the finest possible platinum (Pt) coating. This memory capacitor structure is easily configured by conventional etching processes, such as reactive ionic etching (RIE).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19932844A DE19932844A1 (en) | 1999-07-14 | 1999-07-14 | Storage capacitor |
DE19932844.7 | 1999-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001006561A2 WO2001006561A2 (en) | 2001-01-25 |
WO2001006561A3 true WO2001006561A3 (en) | 2001-05-17 |
Family
ID=7914712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2000/002184 WO2001006561A2 (en) | 1999-07-14 | 2000-07-04 | Ferroelectric memory capacitor |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE19932844A1 (en) |
WO (1) | WO2001006561A2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5619393A (en) * | 1994-08-01 | 1997-04-08 | Texas Instruments Incorporated | High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers |
US5824563A (en) * | 1995-05-29 | 1998-10-20 | Samsung Electronics Co., Ltd. | Method for forming lower electrode of capacitor |
US5905278A (en) * | 1996-12-11 | 1999-05-18 | Fujitsu Limited | Semiconductor device having a dielectric film and a fabrication process thereof |
-
1999
- 1999-07-14 DE DE19932844A patent/DE19932844A1/en not_active Ceased
-
2000
- 2000-07-04 WO PCT/DE2000/002184 patent/WO2001006561A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5619393A (en) * | 1994-08-01 | 1997-04-08 | Texas Instruments Incorporated | High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers |
US5824563A (en) * | 1995-05-29 | 1998-10-20 | Samsung Electronics Co., Ltd. | Method for forming lower electrode of capacitor |
US5905278A (en) * | 1996-12-11 | 1999-05-18 | Fujitsu Limited | Semiconductor device having a dielectric film and a fabrication process thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2001006561A2 (en) | 2001-01-25 |
DE19932844A1 (en) | 2001-01-25 |
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