WO2001006561A3 - Ferroelectric memory capacitor - Google Patents

Ferroelectric memory capacitor Download PDF

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Publication number
WO2001006561A3
WO2001006561A3 PCT/DE2000/002184 DE0002184W WO0106561A3 WO 2001006561 A3 WO2001006561 A3 WO 2001006561A3 DE 0002184 W DE0002184 W DE 0002184W WO 0106561 A3 WO0106561 A3 WO 0106561A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory capacitor
ferroelectric memory
dielectric
iridium
ruthenium
Prior art date
Application number
PCT/DE2000/002184
Other languages
German (de)
French (fr)
Other versions
WO2001006561A2 (en
Inventor
Hermann Kohlstedt
Original Assignee
Forschungszentrum Juelich Gmbh
Hermann Kohlstedt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Hermann Kohlstedt filed Critical Forschungszentrum Juelich Gmbh
Publication of WO2001006561A2 publication Critical patent/WO2001006561A2/en
Publication of WO2001006561A3 publication Critical patent/WO2001006561A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention relates to a memory capacitor for use in DRAM memories which has electrodes consisting of ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir) or iridium dioxide (IrO2) and a dielectric consisting of barium strontium titanate (BST). In order to obtain the smallest possible leakage currents, the dielectric is coated on both sides with the finest possible platinum (Pt) coating. This memory capacitor structure is easily configured by conventional etching processes, such as reactive ionic etching (RIE).
PCT/DE2000/002184 1999-07-14 2000-07-04 Ferroelectric memory capacitor WO2001006561A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19932844.7 1999-07-14
DE19932844A DE19932844A1 (en) 1999-07-14 1999-07-14 Storage capacitor

Publications (2)

Publication Number Publication Date
WO2001006561A2 WO2001006561A2 (en) 2001-01-25
WO2001006561A3 true WO2001006561A3 (en) 2001-05-17

Family

ID=7914712

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/002184 WO2001006561A2 (en) 1999-07-14 2000-07-04 Ferroelectric memory capacitor

Country Status (2)

Country Link
DE (1) DE19932844A1 (en)
WO (1) WO2001006561A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
US5824563A (en) * 1995-05-29 1998-10-20 Samsung Electronics Co., Ltd. Method for forming lower electrode of capacitor
US5905278A (en) * 1996-12-11 1999-05-18 Fujitsu Limited Semiconductor device having a dielectric film and a fabrication process thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619393A (en) * 1994-08-01 1997-04-08 Texas Instruments Incorporated High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
US5824563A (en) * 1995-05-29 1998-10-20 Samsung Electronics Co., Ltd. Method for forming lower electrode of capacitor
US5905278A (en) * 1996-12-11 1999-05-18 Fujitsu Limited Semiconductor device having a dielectric film and a fabrication process thereof

Also Published As

Publication number Publication date
DE19932844A1 (en) 2001-01-25
WO2001006561A2 (en) 2001-01-25

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