WO2001006286A1 - Integrated optical device with coupling waveguide layer - Google Patents
Integrated optical device with coupling waveguide layer Download PDFInfo
- Publication number
- WO2001006286A1 WO2001006286A1 PCT/GB2000/002703 GB0002703W WO0106286A1 WO 2001006286 A1 WO2001006286 A1 WO 2001006286A1 GB 0002703 W GB0002703 W GB 0002703W WO 0106286 A1 WO0106286 A1 WO 0106286A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical
- waveguide layer
- optical device
- layer
- dependent
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
- H01S5/1035—Forward coupled structures [DFC]
Definitions
- the present invention relates to optical devices, and in particular to integrated semiconductor optical devices .
- one of the component structures for example, a semiconductor laser
- a semiconductor substrate is grown epitaxially onto a semiconductor substrate. Unwanted growth areas are then removed from the surface of the substrate where another component structure (for example, a modulator) is to be formed.
- the second component structure is consequently grown in these areas .
- This approach suffers from several disadvantages; misalignment occurs between the optical wave guide layers of the different structures, and poor crystal quality and layer defamation can occur at the boundary between the two areas during the second growth step.
- SAG selected area growth
- the substrate is patterned before the devices are grown epitaxially on the substrate. All of the component structures are grown in a single process.
- the optical waveguide layers are therefore self-aligning.
- the necessary differences in material parameters, particularly the band gap energies, are achieved by the fact that growth speed varies across a pattern substrate, which results in variations in parameters such as quantum well thickness.
- the main disadvantage of such a technique is that the achievable band gap difference is often limited. It is also difficult to optimise the two device structures independently because they must have the same layer structure and doping profile.
- QWI quantum well intermixing
- the component quantum well (Q ) structures are grown on a usual substrate in a single growth step.
- the band gap of a quantum well is changed by an intermixing process, which causes the QW to change material composition and geometric shape, resulting in band gap variation.
- the waveguide layer is again self- aligning.
- the main disadvantage with such a technique is that the achievable band gap differences are limited by the amount of achievable intermixing.
- the intermixing process is usually carried out at high temperatures and may therefore result in deterioration of the material quality.
- the intermixing process is sensitive to process environment and substrate surface conditions, which can result in low repeatability and control ability. It is also difficult to optimise the two device structures independently because they must have the same layer structure and doping profile.
- an integrated optical device comprising first and second optical devices and an optical waveguide layer, wherein each optical device is arranged to be optically coupled with the waveguide layer.
- an integrated optical device comprising a substrate layer, a waveguide layer carried by the substrate layer, and a first optical device carried by the waveguide layer, wherein the first optical device is optically coupled with the waveguide layer.
- Figure 1 illustrates a first embodiment of the present invention
- Figure 2 illustrates a second embodiment of the present inventio .
- Figure 3 illustrates a third embodiment of the present invention.
- embodiments of the present invention can overcome the disadvantages of the previously-considered integration techniques by providing an independent waveguide layer in the integrated device.
- Figure 1 illustrates a first integrated optical device embodying the present invention.
- the device is formed on a substrate 1 and includes layers of material which form the device structures.
- the substrate carries a waveguide layer 3 which is formed of a material which is able to carry optical signals, with low loss, such as a semiconductor material with wider bandgap, for example InP, GaAs or related compounds.
- the waveguide layer 3 is preferably enclosed by a cladding layer 4.
- On the cladding layer 4 , or on the waveguide layer 3 individual optical devices 5 and 9 are provided.
- the first device 5 includes a device region 6 and a coupling region 7.
- the second device 9 includes a coupling region 10 and a device region 11. Each device is arranged such that it can couple optical signals with the waveguide layer 3.
- This optical coupling occurs because the devices are located in close proximity to the waveguide layer 3, and the coupling regions have propagation constants substantially equal to the waveguide layer 3. For example, a spacing of l ⁇ m enables light to be coupled between the devices and the waveguide layer 3.
- Each of the optical devices is preferably provided with a coupling region in order to optimise the coupling between the device and the waveguide layer, as shown in Figure 1.
- the overall length of the device and its associated coupling region determines the mode in which optical signals are coupled between the device and the waveguide layer 3.
- the lengths of the coupling regions are preferably chosen so that maximum optical power transfer occurs at the end of the devices. This serves to minimise optical loss and backscattering.
- the lengths When light in coupled from waveguide layer 3 into the devices, the lengths would be chosen either to facilitate maximum optical power transfer at the end of the coupling regions, or to facilitate a gradual optical power transfer along the device length.
- the former mode would gather most of the optical power at the entrance of the device regions, while the latter mode would give a more even optical power distribution along the device -o — length.
- Complete coupling can be achieved if the length of the coupling interface is equal to the beat length of the lowest order modes of the waveguide layer 3.
- the coupling regions 7 and 10 are arranged so that strong optical coupling occurs between those regions and the waveguide layer 3. This can be achieved, as mentioned above, by making the propagation constants of the coupling regions substantially equal to that of the waveguide layer 3.
- the lateral waveguide shape of regions 7 and 10 could be tapered.
- the first device is arranged such that optical signals produced or processed by the device region 6 is coupled into the waveguide layer 3 of the integrated device through the coupling region 7.
- the optical signals coupled into the waveguide layer 3 are then coupled with the second device 9 by way of its coupling region 10.
- the coupling region 10 is coupled with the device region 11 for transferring a light optical signal to the device.
- the integrated device is formed by growing the waveguide layer 3 (and optional protective layer 4) onto the substrate 1 and then by growing the individual devices 5 and 9 either in a single epitaxial growth operation, or in separate operations.
- the coupling regions of each device are formed integrally with the device regions, and so optical coupling between the two can be arranged to be strong.
- each device 5 and 9 couples with the waveguide layer of the integrated device, for transfer of signals between the two devices, the devices need not be produced as part of the same fabrication step.
- the waveguide layer 3 provides an independent coupling path 14 for transfer of optical signals between the devices, and so the transfer is not dependent on achieving direct coupling between the devices .
- Figure 2 illustrates a particular embodiment of the present invention, in which the first device is a distributed feedback semiconductor laser (device region 6) , and the second device is an electro-absorption modulator. Both devices use short lengths of coupling regions in order to optimise the coupling between the device and the waveguide layer 3.
- the waveguide layer 3 is passive and simply enables optical energy to travel between the two devices along optical path 14.
- FIG. 3 Another embodiment of the present invention is shown in Figure 3 in which a distributed feedback laser 6 couples to the waveguide layer 3 via a coupler 7.
- a second device 15 is provided which again is an electro-absorption modulator.
- the modulator 15 is provided by a modulator layer 16 to which a bias voltage can be applied.
- the waveguide layer 3 then provides part of the modulator itself .
- the Figure 3 embodiment is simple to manufacture, since only one epitaxial growth process is required, the modulator being manufactured by a simple metalling process .
- optical devices that can be integrated on a substrate which carries a waveguide layer in accordance with the invention, are: a Fabry-Perot cavity semiconductor laser, a distributed feedback semiconductor laser, a distributed Bragg reflector semiconductor laser, an electro-absorption modulator, a Mach-Zehnder modulator, or an electro-optic modulator.
- optical components such as detectors or amplifiers are also suitable for use in embodiments of the invention.
- Other optical components such as detectors or amplifiers are also suitable for use in embodiments of the invention.
- the above lists of devices and components are not exhaustive, and other suitable devices and components can be used in integrated devices embodying the present invention.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU61695/00A AU6169500A (en) | 1999-07-15 | 2000-07-14 | Integrated optical device with coupling waveguide layer |
EP00948124A EP1196795A1 (en) | 1999-07-15 | 2000-07-14 | Integrated optical device with coupling waveguide layer |
CA002378341A CA2378341A1 (en) | 1999-07-15 | 2000-07-14 | Integrated optical device with coupling waveguide layer |
KR1020027000395A KR20020042800A (en) | 1999-07-15 | 2000-07-14 | Integrated optical device with coupling waveguide layer |
JP2001510867A JP2003505716A (en) | 1999-07-15 | 2000-07-14 | Integrated optical device having a coupling waveguide layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9916642.3 | 1999-07-15 | ||
GB9916642A GB2352085A (en) | 1999-07-15 | 1999-07-15 | Integrated semiconductor optical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001006286A1 true WO2001006286A1 (en) | 2001-01-25 |
Family
ID=10857315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2000/002703 WO2001006286A1 (en) | 1999-07-15 | 2000-07-14 | Integrated optical device with coupling waveguide layer |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1196795A1 (en) |
JP (1) | JP2003505716A (en) |
KR (1) | KR20020042800A (en) |
CN (1) | CN1361873A (en) |
AU (1) | AU6169500A (en) |
CA (1) | CA2378341A1 (en) |
GB (1) | GB2352085A (en) |
WO (1) | WO2001006286A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7031558B2 (en) | 2003-08-18 | 2006-04-18 | Hassan Tanbakuchi | Low-pass filter transmission line with integral electroabsorption modulator |
US7039078B2 (en) | 2002-09-17 | 2006-05-02 | Nippon Telegraph And Telephone Corporation | Semiconductor optical modulator and laser with optical modulator |
US10548982B2 (en) | 2009-08-10 | 2020-02-04 | Ucl Business Ltd | Reversible covalent linkage of functional molecules |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4704125B2 (en) * | 2005-06-22 | 2011-06-15 | 浜松ホトニクス株式会社 | Optical device |
JP4842983B2 (en) * | 2008-02-14 | 2011-12-21 | 日本電信電話株式会社 | Semiconductor optical integrated device and manufacturing method thereof |
JP4971235B2 (en) * | 2008-04-08 | 2012-07-11 | 日本電信電話株式会社 | Semiconductor optical integrated device |
CN103248426A (en) * | 2013-04-28 | 2013-08-14 | 华为技术有限公司 | Optical module and preparation method thereof |
CN104184046B (en) * | 2014-08-29 | 2017-01-25 | 清华大学 | Coupled structure for coupling of semi-conductor laser and TriPleX waveguide and preparation method thereof |
CN107293557B (en) * | 2017-05-23 | 2019-01-18 | 深圳信息职业技术学院 | It is a kind of to make the matrix structure and preparation method thereof for integrating a variety of photoelectric devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5022038A (en) * | 1989-12-28 | 1991-06-04 | General Dynamics Corp./Electronics Division | Wavelength tunable diode laser |
EP0464869A1 (en) * | 1985-01-07 | 1992-01-08 | Siemens Aktiengesellschaft | Monolithically integrated WDM Demultiplexmodule and method of manufacturing such a module |
US5524076A (en) * | 1994-01-28 | 1996-06-04 | Northern Telecom Limited | Chirp control of a Mach-Zehnder optical modulator using non-equal power splitting |
Family Cites Families (8)
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---|---|---|---|---|
JPS61160987A (en) * | 1985-01-09 | 1986-07-21 | Nec Corp | Integrated semiconductor photo element and manufacture thereof |
JP2587628B2 (en) * | 1987-01-29 | 1997-03-05 | 国際電信電話株式会社 | Semiconductor integrated light emitting device |
US4802182A (en) * | 1987-11-05 | 1989-01-31 | Xerox Corporation | Monolithic two dimensional waveguide coupled cavity laser/modulator |
JP3263949B2 (en) * | 1991-02-25 | 2002-03-11 | 日本電気株式会社 | Manufacturing method of optical integrated circuit |
GB2292011B (en) * | 1993-07-20 | 1997-11-05 | Mitsubishi Electric Corp | Semiconductor optical devices and methods for fabricating semiconductor optical devices |
JP3285426B2 (en) * | 1993-08-04 | 2002-05-27 | 株式会社日立製作所 | Semiconductor optical integrated device and method of manufacturing the same |
JPH07176827A (en) * | 1993-08-20 | 1995-07-14 | Mitsubishi Electric Corp | Manufacture of semiconductor laser with modulator |
JPH0794833A (en) * | 1993-09-22 | 1995-04-07 | Mitsubishi Electric Corp | Semiconductor laser and its manufacturing method |
-
1999
- 1999-07-15 GB GB9916642A patent/GB2352085A/en not_active Withdrawn
-
2000
- 2000-07-14 EP EP00948124A patent/EP1196795A1/en not_active Ceased
- 2000-07-14 AU AU61695/00A patent/AU6169500A/en not_active Abandoned
- 2000-07-14 WO PCT/GB2000/002703 patent/WO2001006286A1/en not_active Application Discontinuation
- 2000-07-14 KR KR1020027000395A patent/KR20020042800A/en not_active Application Discontinuation
- 2000-07-14 CN CN00810366A patent/CN1361873A/en active Pending
- 2000-07-14 JP JP2001510867A patent/JP2003505716A/en active Pending
- 2000-07-14 CA CA002378341A patent/CA2378341A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0464869A1 (en) * | 1985-01-07 | 1992-01-08 | Siemens Aktiengesellschaft | Monolithically integrated WDM Demultiplexmodule and method of manufacturing such a module |
US5022038A (en) * | 1989-12-28 | 1991-06-04 | General Dynamics Corp./Electronics Division | Wavelength tunable diode laser |
US5524076A (en) * | 1994-01-28 | 1996-06-04 | Northern Telecom Limited | Chirp control of a Mach-Zehnder optical modulator using non-equal power splitting |
Non-Patent Citations (3)
Title |
---|
MERZ J L ET AL: "GaAs integrated optical circuits by wet chemical etching", IEEE JOURNAL OF QUANTUM ELECTRONICS, FEB. 1979, USA, vol. QE-15, no. 2, pages 72 - 82, XP002149407, ISSN: 0018-9197 * |
SHAMS M K ET AL: "Monolithic integration of GaAs-(GaAl)As light modulators and distributed-Bragg-reflector lasers", APPLIED PHYSICS LETTERS, 1 MARCH 1978, USA, vol. 32, no. 5, pages 314 - 316, XP002149408, ISSN: 0003-6951 * |
STUDENKOV P V ET AL: "MONOLITHIC INTEGRATION OF A QUANTUM-WELL LASER AND AN OPTICAL AMPLIFIER USING AN ASYMMETRIC TWIN-WAVEGUIDE STRUCTURE", IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 10, no. 8, 1 August 1998 (1998-08-01), pages 1088 - 1090, XP000769865, ISSN: 1041-1135 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7039078B2 (en) | 2002-09-17 | 2006-05-02 | Nippon Telegraph And Telephone Corporation | Semiconductor optical modulator and laser with optical modulator |
US7031558B2 (en) | 2003-08-18 | 2006-04-18 | Hassan Tanbakuchi | Low-pass filter transmission line with integral electroabsorption modulator |
US10548982B2 (en) | 2009-08-10 | 2020-02-04 | Ucl Business Ltd | Reversible covalent linkage of functional molecules |
US10933142B2 (en) | 2009-08-10 | 2021-03-02 | Ucl Business Ltd | Reversible covalent linkage of functional molecules |
Also Published As
Publication number | Publication date |
---|---|
GB2352085A (en) | 2001-01-17 |
GB9916642D0 (en) | 1999-09-15 |
EP1196795A1 (en) | 2002-04-17 |
AU6169500A (en) | 2001-02-05 |
KR20020042800A (en) | 2002-06-07 |
CN1361873A (en) | 2002-07-31 |
CA2378341A1 (en) | 2001-01-25 |
JP2003505716A (en) | 2003-02-12 |
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