WO2001000522A3 - Nanometer-scale modulation - Google Patents
Nanometer-scale modulation Download PDFInfo
- Publication number
- WO2001000522A3 WO2001000522A3 PCT/DK2000/000348 DK0000348W WO0100522A3 WO 2001000522 A3 WO2001000522 A3 WO 2001000522A3 DK 0000348 W DK0000348 W DK 0000348W WO 0100522 A3 WO0100522 A3 WO 0100522A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- modulation
- interface
- wafers
- controlled
- Prior art date
Links
- 239000013078 crystal Substances 0.000 abstract 11
- 235000012431 wafers Nutrition 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 239000002096 quantum dot Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q40/00—Calibration, e.g. of probes
- G01Q40/02—Calibration standards and methods of fabrication thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/125—Quantum wire structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00940221A EP1196350A2 (en) | 1999-06-28 | 2000-06-28 | Nanometer-scale modulation |
AU55223/00A AU5522300A (en) | 1999-06-28 | 2000-06-28 | Nanometer-scale modulation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DKPA199900918 | 1999-06-28 | ||
DKPA199900918 | 1999-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001000522A2 WO2001000522A2 (en) | 2001-01-04 |
WO2001000522A3 true WO2001000522A3 (en) | 2001-05-03 |
Family
ID=8099011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DK2000/000348 WO2001000522A2 (en) | 1999-06-28 | 2000-06-28 | Nanometer-scale modulation |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1196350A2 (en) |
AU (1) | AU5522300A (en) |
WO (1) | WO2001000522A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001042540A1 (en) * | 1999-12-09 | 2001-06-14 | Cornell Research Foundation, Inc. | Fabrication of periodic surface structures with nanometer-scale spacings |
US6489041B2 (en) * | 1999-12-09 | 2002-12-03 | Nippon Telegraph And Telephone Corporation | Magnetic body formed by quantum dot array using non-magnetic semiconductor |
DE10108853C2 (en) * | 2001-02-18 | 2003-01-16 | Hahn Meitner Inst Berlin Gmbh | Process for the reproducible production of a regular arrangement from nanocrystalline magnetic particles |
FR2826378B1 (en) * | 2001-06-22 | 2004-10-15 | Commissariat Energie Atomique | UNIFORM CRYSTALLINE ORIENTATION COMPOSITE STRUCTURE AND METHOD FOR CONTROLLING THE CRYSTALLINE ORIENTATION OF SUCH A STRUCTURE |
US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
FR2877662B1 (en) * | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | PARTICLE NETWORK AND METHOD FOR MAKING SUCH A NETWORK |
US7535089B2 (en) | 2005-11-01 | 2009-05-19 | Massachusetts Institute Of Technology | Monolithically integrated light emitting devices |
US8063397B2 (en) | 2006-06-28 | 2011-11-22 | Massachusetts Institute Of Technology | Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294808A (en) * | 1992-10-23 | 1994-03-15 | Cornell Research Foundation, Inc. | Pseudomorphic and dislocation free heteroepitaxial structures |
US5532510A (en) * | 1994-12-30 | 1996-07-02 | At&T Corp. | Reverse side etching for producing layers with strain variation |
US5614435A (en) * | 1994-10-27 | 1997-03-25 | The Regents Of The University Of California | Quantum dot fabrication process using strained epitaxial growth |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US5802232A (en) * | 1996-02-16 | 1998-09-01 | Bell Communications Research, Inc. | Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide |
US5888885A (en) * | 1997-05-14 | 1999-03-30 | Lucent Technologies Inc. | Method for fabricating three-dimensional quantum dot arrays and resulting products |
EP0908933A1 (en) * | 1997-10-08 | 1999-04-14 | Lucent Technologies Inc. | Process for bonding crystalline substrates with different crystal lattices |
-
2000
- 2000-06-28 EP EP00940221A patent/EP1196350A2/en not_active Withdrawn
- 2000-06-28 WO PCT/DK2000/000348 patent/WO2001000522A2/en not_active Application Discontinuation
- 2000-06-28 AU AU55223/00A patent/AU5522300A/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5294808A (en) * | 1992-10-23 | 1994-03-15 | Cornell Research Foundation, Inc. | Pseudomorphic and dislocation free heteroepitaxial structures |
US5614435A (en) * | 1994-10-27 | 1997-03-25 | The Regents Of The University Of California | Quantum dot fabrication process using strained epitaxial growth |
US5532510A (en) * | 1994-12-30 | 1996-07-02 | At&T Corp. | Reverse side etching for producing layers with strain variation |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US5802232A (en) * | 1996-02-16 | 1998-09-01 | Bell Communications Research, Inc. | Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide |
US5888885A (en) * | 1997-05-14 | 1999-03-30 | Lucent Technologies Inc. | Method for fabricating three-dimensional quantum dot arrays and resulting products |
EP0908933A1 (en) * | 1997-10-08 | 1999-04-14 | Lucent Technologies Inc. | Process for bonding crystalline substrates with different crystal lattices |
Also Published As
Publication number | Publication date |
---|---|
EP1196350A2 (en) | 2002-04-17 |
AU5522300A (en) | 2001-01-31 |
WO2001000522A2 (en) | 2001-01-04 |
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