WO2000065649A1 - CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS - Google Patents
CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS Download PDFInfo
- Publication number
- WO2000065649A1 WO2000065649A1 PCT/US2000/011212 US0011212W WO0065649A1 WO 2000065649 A1 WO2000065649 A1 WO 2000065649A1 US 0011212 W US0011212 W US 0011212W WO 0065649 A1 WO0065649 A1 WO 0065649A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tin
- precursor
- substrate
- film
- deposited
- Prior art date
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 80
- 239000010936 titanium Substances 0.000 title claims description 27
- -1 TITANIUM HALIDE Chemical class 0.000 title claims description 11
- 229910052719 titanium Inorganic materials 0.000 title claims description 10
- 230000015572 biosynthetic process Effects 0.000 title description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 25
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 150000004820 halides Chemical class 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- USTCDWPWVRPRDC-UHFFFAOYSA-N [I].[I].[I].[I].[Ti] Chemical compound [I].[I].[I].[I].[Ti] USTCDWPWVRPRDC-UHFFFAOYSA-N 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 21
- 238000005336 cracking Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- 239000012159 carrier gas Substances 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 229910004156 TaNx Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000009972 noncorrosive effect Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229910004546 TaF5 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910001055 inconels 600 Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000010944 pre-mature reactiony Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Definitions
- This invention relates to the formation of integrated circuits
- Integrated circuits provide the pathways for signal transport in
- An integrated circuit (IC) in a device is composed of
- a contact plug As transistor densities continue to increase, forming higher level IC, the
- diameter of the contact plug must decrease to allow for the increased
- Vias greater than about OJ 6 ⁇ m in diameter are typically filled
- a titanium (Ti) is first deposited using
- TiN titanium nitride
- Deposition may be by either CVD or PVD, with
- LPCVD low pressure CVD
- the TiN layer has sidewalls of submicron structures with high aspect ratios.
- TiN provides an excellent contact barrier
- the TiN must have a
- TiN thickness of about 500 A to be effective as a barrier. If the TiN thickness
- W layer provides an area of low resistance, which is important for current
- the contact plug must decrease to allow for the increased number of
- the TiN diffusion barrier layer Since the TiN barrier layer must remain
- a structure with a diameter of 0J 5 ⁇ m would have a W film or
- a film with high stress has a high intensity of internally distributed
- the maximum film thickness that can be deposited typically, the maximum
- oxides is about 800 A. TiN films that are thicker than about 800 A begin
- a conformal film is one that exactly
- Such a film would eliminate a W deposition step, and thus reduce the
- Ti titanium iodide
- Til precursor is titanium tetraiodide (T ⁇ l 4 ) and is deposited by thermal CVD.
- the present invention is also directed to a method of
- the invention is also directed to a method of forming a contact
- the via is a high aspect ratio via that is less than about 0J 6 ⁇ m in
- Another advantage of the method is the elimination of a
- the method also eliminates the problem of adhering a W layer to
- FIG. 1 is a schematic of an apparatus for chemical vapor
- CVD chemical vapor deposition
- FIG . 2 is a graph comparing stress in titanium (TiX) halide
- FIG. 3 is a photograph of a SEM of a titanium tetraiodide (T ⁇ l 4 )
- FIGS. 4A and 4B are transmission electron micrographs of Ti
- FIG. 5 is a photograph of a SEM of a 10: 1 aspect ratio structure
- FIG. 6 is a photograph of a SEM of a 10: 1 aspect ratio structure
- FIG. 7 is a photograph of a SEM of a 10: 1 aspect ratio structure
- the gas precursors react chemically to form a film.
- FIG 1 A method of CVD is illustrated in FIG 1 and is disclosed in a copending
- CVD chemical deposition
- titanium iodide (Til) into a film such as a barrier layer film of TiN is a film such as a barrier layer film of TiN.
- the precursor delivery system 1 2 includes a source 1 3 of
- precursor gas having a gas outlet 1 4, which communicates through a
- the source 1 3 generates a precursor gas, for example a Til vapor from the
- Til compound preferably Til 4 .
- the compound is one that is in a
- the precursor source is
- pressure is one that is itself sufficient to deliver the precursor vapor to the
- reaction chamber 1 1 preferably without the use of a carrier gas.
- metering system 1 5 maintains a flow of the precursor gas vapor from the
- the reaction chamber 1 1 is a generally conventional CVD
- reactor and includes a vacuum chamber 20 that is bounded by a vacuum
- the chamber 20 is maintained at a vacuum appropriate for the
- the vacuum is 0.2-5.0 Torr.
- the vacuum is maintained by controlled operation of a
- reducing gas sources 26 of, for example, hydrogen (H 2 ), nitrogen (N 2 ) or ammonia (NH 3 ) for use in carrying out a Ti
- the precursor gas source 1 3 includes a sealed evaporator 30
- the vessel 31 is bounded by a cylindrical wall 33 formed of a high
- the wall 33 has a flat circular closed bottom 35 and an open top
- the outlet 14 of the source 1 3 is situated in the
- cover 36 is sealed to a flange ring 37 that is integral to the top of the
- HELICOFLEX seal which is formed of a C-shaped nickel tube
- seal 38 may be used to seal the cover.
- a carrier gas which is preferably an inert gas such as He or
- the source 1 3 includes a mass of precursor material such as Til, preferably T ⁇ l 4 , at the bottom of the vessel 31 , which is loaded into the
- vessel 31 is filled with Til vapor by sealing the vessel 31 with the solid
- the Til is supplied as a precursor mass 40 that is
- the vapor lies above the level of the liquid
- the delivery system 1 2 is not limited to direct delivery of a
- precursor 40 but can be used in the alternative for delivery of precursor 40
- Such a gas may be hydrogen (H 2 ) or an inert gas such as
- He helium
- Ar argon
- mass 40 or may be introduced into the vessel 31 so as to percolate through
- a direct delivery system i.e., a direct delivery system
- a lower vapor pressure such as about 1
- such a temperature is in the range of about 1 80° C to 1 90° C.
- This temperature is appropriate for producing a desired vapor pressure
- the wall or can 47 is further surrounded by an annular layer of
- the desired example temperature range of between 1 80°C and 1 90°C and
- the pressure greater than about 3 Torr, preferably at greater than 5 Torr.
- the vapor flow metering system 1 5 includes a delivery tube 50
- the tube 50 extends from the precursor
- reaction chamber 1 1 to which it connects at its downstream end to the
- baffle plate 51 in which is centered
- a circular orifice 52 which preferably has a diameter of approximately
- control valve 53 This pressure drop after control valve 53
- a shut-off valve 54 is
- control valve 53 to close the vessel 31 of the evaporator 1 3.
- Pressure sensors 55-58 are provided in the system 10 to
- pressure sensors include sensor 55 connected to the tube 50 between the
- a pressure sensor 56 is connected
- sensor 58 is connected to the chamber 20 of the reaction chamber 1 1 to
- chamber 20 of the reaction chamber 1 1 is achieved by the controller 60 in response to the pressures sensed by the sensors 55-58, particularly the
- sensors 56 and 57 which determine the pressure drop across the orifice 52.
- orifice 52 is unchoked flow, the actual flow of precursor vapor through the
- tube 52 is a function of the pressures monitored by pressure sensors 56
- rate of precursor gas can be determined by the controller 60 through
- precursor gas is calculated by retrieving flow rate data from lookup or
- multiplier tables stored in a non-volatile memory 61 accessible by the
- controller 60 When the actual flow rate of the precursor vapor is
- the desired flow rate can be maintained by a closed loop
- CVD chamber pressure through evacuation pump 24 or control of reducing or inert gases from sources 26 and 27, or by control of the temperature and
- Til 4 is widely available at a purity of 99.99%. It is a purple
- precursor material 40 is sealed in a cylindrical corrosion resistant metal
- Vapor from Til 4 was delivered directly, that is without the use of
- reaction chamber 1 1 was heated to a temperature of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at least one of at
- the Til 4 vapor was
- Argon (Ar) nitrogen (N 2 ) , hydrogen (H 2 ) and helium (He)
- the deposition temperature must be less than about 650°C
- the deposition rate must be greater than about 300 A per
- the chamber pressure can be any suitable gas
- a pressure of about 1 .5 Torr yields a deposition rate of about 300 A per
- the deposited film must have low stress as measured
- the film stress must be less than about 1 x1 0 10
- electrical resistivity of the deposited film is preferably less than about 250
- high aspect ratio structures have an aspect
- the feature may be a via, hole, trench, etc.
- Al aluminum
- impurities ideally less than
- the process gases such as He,
- present invention have a higher cracking threshold than TiN films deposited
- FIG 2 is a graph
- triangles indicate a TiN film deposited at 550°C from a T ⁇ l 4 precursor.
- a T ⁇ CI 4 based film exhibits a rapid decrease
- FIG 3 is a scanning electron micrograph
- the TiN layer 60 is 2000 A deposited
- FIG. 4 is a transmission
- Til 4 based films have substantially
- FIG 5 is an SEM of a 10: 1 aspect ratio structure filled with
- FIG 6 is an SEM of a 10: 1
- FIG 7 shows the contact resistance data for electrical test
- TiN is fifteen to twenty times greater than for W, which has a resistivity
- the film deposited by the method of the invention displays
- the film has low
- the film can be deposited at a thickness greater than 0.3 ⁇ m without
- the method of the invention can be used to fill a feature as small
- Ta films may be deposited by PECVD, TaN x films
- thermal CVD PECVD
- Ta/TaN x bilayers may be deposited by CVD and TaN x may be
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000614498A JP2002543589A (en) | 1999-04-27 | 2000-04-26 | Formation of CVD TiN plug from titanium halide precursor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30016599A | 1999-04-27 | 1999-04-27 | |
US09/300,165 | 1999-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000065649A1 true WO2000065649A1 (en) | 2000-11-02 |
Family
ID=23157985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/011212 WO2000065649A1 (en) | 1999-04-27 | 2000-04-26 | CVD TiN PLUG FORMATION FROM TITANIUM HALIDE PRECURSORS |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2002543589A (en) |
KR (1) | KR100634651B1 (en) |
TW (1) | TW466593B (en) |
WO (1) | WO2000065649A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8384192B2 (en) | 2004-01-28 | 2013-02-26 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US8518184B2 (en) | 2003-12-10 | 2013-08-27 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition |
US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US9494947B2 (en) | 2011-05-10 | 2016-11-15 | Fujikin Incorporated | Pressure type flow control system with flow monitoring |
US9556518B2 (en) | 2011-07-08 | 2017-01-31 | Fujikin Incorporated | Raw material gas supply apparatus for semiconductor manufacturing equipment |
US9631777B2 (en) | 2011-09-06 | 2017-04-25 | Fujikin Incorporated | Raw material vaporizing and supplying apparatus equipped with raw material concentration |
US10361084B2 (en) | 2015-09-03 | 2019-07-23 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system |
US11168099B2 (en) * | 2017-11-30 | 2021-11-09 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Titanium-containing film forming compositions for vapor deposition of titanium-containing films |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011035201A (en) * | 2009-08-03 | 2011-02-17 | Sumitomo Electric Ind Ltd | Gas-phase treatment device, gas-phase treatment method, and substrate |
JP7520869B2 (en) | 2019-03-13 | 2024-07-23 | メトオックス インターナショナル,インコーポレイテッド | Solid precursor delivery system for thin film deposition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4897709A (en) * | 1988-04-15 | 1990-01-30 | Hitachi, Ltd. | Titanium nitride film in contact hole with large aspect ratio |
JPH1197390A (en) * | 1997-09-19 | 1999-04-09 | Nec Corp | Method of forming contact plug and its device |
-
2000
- 2000-04-26 KR KR1020017013563A patent/KR100634651B1/en not_active IP Right Cessation
- 2000-04-26 JP JP2000614498A patent/JP2002543589A/en not_active Abandoned
- 2000-04-26 TW TW089107861A patent/TW466593B/en not_active IP Right Cessation
- 2000-04-26 WO PCT/US2000/011212 patent/WO2000065649A1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4897709A (en) * | 1988-04-15 | 1990-01-30 | Hitachi, Ltd. | Titanium nitride film in contact hole with large aspect ratio |
JPH1197390A (en) * | 1997-09-19 | 1999-04-09 | Nec Corp | Method of forming contact plug and its device |
Non-Patent Citations (4)
Title |
---|
FALTERMEIER C ET AL: "Barrier properties of titanium nitride films grown by low temperature chemical vapor deposition from titanium tetraiodide", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MARCH 1997, ELECTROCHEM. SOC, USA, vol. 144, no. 3, pages 1002 - 1008, XP000938672, ISSN: 0013-4651 * |
MEI Y J ET AL: "Characterization of TiN film grown by low-pressure-chemical-vapor-dep osition", 24TH INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS AND THIN FILMS, SAN DIEGO, CA, USA, 21-25 APRIL 1997, vol. 308-309, Thin Solid Films, 31 Oct. 1997, Elsevier, Switzerland, pages 594 - 598, XP004110342, ISSN: 0040-6090 * |
MORI K ET AL: "Contact plug formed with chemical-vapour-deposited TiN", EXTENDED ABSTRACTS OF THE 1991 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, YOKOHAMA, JAPAN, 27-29 AUG. 1991, 1991, Tokyo, Japan, Bus. Center Acad. Soc. Japan, Japan, pages 210 - 212, XP000955125 * |
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 09 30 July 1999 (1999-07-30) * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8518184B2 (en) | 2003-12-10 | 2013-08-27 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition |
US8384192B2 (en) | 2004-01-28 | 2013-02-26 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
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KR20020020882A (en) | 2002-03-16 |
KR100634651B1 (en) | 2006-10-16 |
JP2002543589A (en) | 2002-12-17 |
TW466593B (en) | 2001-12-01 |
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