WO2000062030A1 - Method of making thin film piezoresistive sensor - Google Patents
Method of making thin film piezoresistive sensor Download PDFInfo
- Publication number
- WO2000062030A1 WO2000062030A1 PCT/US2000/009858 US0009858W WO0062030A1 WO 2000062030 A1 WO2000062030 A1 WO 2000062030A1 US 0009858 W US0009858 W US 0009858W WO 0062030 A1 WO0062030 A1 WO 0062030A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- substrate
- sensor
- sensors
- doped
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00925951A EP1171759A1 (en) | 1999-04-14 | 2000-04-13 | Method of making thin film piezoresistive sensor |
AU44565/00A AU4456500A (en) | 1999-04-14 | 2000-04-13 | Method of making thin film piezoresistive sensor |
KR10-2001-7013160A KR100432465B1 (en) | 1999-04-14 | 2000-04-13 | Thin film piezoresistive sensor and method of making the same |
JP2000611045A JP3730868B2 (en) | 1999-04-14 | 2000-04-13 | Method of manufacturing thin film piezoresistive sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/291,468 | 1999-04-14 | ||
US09/291,468 US6319743B1 (en) | 1999-04-14 | 1999-04-14 | Method of making thin film piezoresistive sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000062030A1 true WO2000062030A1 (en) | 2000-10-19 |
WO2000062030A9 WO2000062030A9 (en) | 2002-04-25 |
Family
ID=23120420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/009858 WO2000062030A1 (en) | 1999-04-14 | 2000-04-13 | Method of making thin film piezoresistive sensor |
Country Status (7)
Country | Link |
---|---|
US (1) | US6319743B1 (en) |
EP (1) | EP1171759A1 (en) |
JP (1) | JP3730868B2 (en) |
KR (1) | KR100432465B1 (en) |
AU (1) | AU4456500A (en) |
TW (1) | TW448290B (en) |
WO (1) | WO2000062030A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10014984A1 (en) * | 2000-03-25 | 2001-10-18 | Bosch Gmbh Robert | Manufacturing method for a thin-film component, in particular a thin-film high-pressure sensor |
JP2001326367A (en) * | 2000-05-12 | 2001-11-22 | Denso Corp | Sensor and method for manufacturing the same |
US20110301569A1 (en) | 2001-01-20 | 2011-12-08 | Gordon Wayne Dyer | Methods and apparatus for the CVCS |
US6759265B2 (en) * | 2001-12-12 | 2004-07-06 | Robert Bosch Gmbh | Method for producing diaphragm sensor unit and diaphragm sensor unit |
JP2007017254A (en) * | 2005-07-07 | 2007-01-25 | Mitsubishi Electric Corp | Manufacturing method of semiconductor pressure sensor |
US7733559B2 (en) * | 2006-12-28 | 2010-06-08 | Seiko Epson Corporation | Electrophoretic display sheet, electrophoretic display device, and electronic apparatus |
US7412892B1 (en) | 2007-06-06 | 2008-08-19 | Measurement Specialties, Inc. | Method of making pressure transducer and apparatus |
TWI382165B (en) * | 2008-05-09 | 2013-01-11 | Hon Hai Prec Ind Co Ltd | Manometric counter |
US8548778B1 (en) | 2012-05-14 | 2013-10-01 | Heartflow, Inc. | Method and system for providing information from a patient-specific model of blood flow |
DE102015201577A1 (en) * | 2015-01-29 | 2016-08-04 | Robert Bosch Gmbh | Sensor arrangement for the indirect detection of a torque of a rotatably mounted shaft |
FR3051038B1 (en) * | 2016-05-09 | 2018-06-01 | Safran Aircraft Engines | FIXING A DEFORMATION GAUGE |
KR102142042B1 (en) | 2019-06-03 | 2020-08-07 | 포항공과대학교 산학협력단 | Fabrication method of reliable pressure sensors at higher temperature |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216401A (en) * | 1978-12-22 | 1980-08-05 | United Technologies Corporation | Surface acoustic wave (SAW) pressure sensor structure |
US5242863A (en) * | 1990-06-02 | 1993-09-07 | Xiang Zheng Tu | Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same |
US5518951A (en) * | 1991-08-26 | 1996-05-21 | Span Instruments, Inc. | Method for making thin film piezoresistive sensor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3912563A (en) * | 1973-06-05 | 1975-10-14 | Matsushita Electric Ind Co Ltd | Method of making semiconductor piezoresistive strain transducer |
US3938175A (en) | 1974-04-24 | 1976-02-10 | General Motors Corporation | Polycrystalline silicon pressure transducer |
US4003127A (en) | 1974-11-25 | 1977-01-18 | General Motors Corporation | Polycrystalline silicon pressure transducer |
US4267011A (en) | 1978-09-29 | 1981-05-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US4229502A (en) | 1979-08-10 | 1980-10-21 | Rca Corporation | Low-resistivity polycrystalline silicon film |
JPS56160034A (en) | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Impurity diffusion |
US4803528A (en) | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
JPS59195871A (en) | 1983-04-20 | 1984-11-07 | Mitsubishi Electric Corp | Manufacture of metal oxide semiconductor field-effect transistor |
US4579600A (en) | 1983-06-17 | 1986-04-01 | Texas Instruments Incorporated | Method of making zero temperature coefficient of resistance resistors |
KR900001267B1 (en) | 1983-11-30 | 1990-03-05 | 후지쓰 가부시끼가이샤 | Manufacture of semiconductor device |
US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPH0670969B2 (en) | 1984-09-13 | 1994-09-07 | 株式会社長野計器製作所 | Manufacturing method of silicon thin film piezoresistive element |
US5095401A (en) | 1989-01-13 | 1992-03-10 | Kopin Corporation | SOI diaphragm sensor |
JPH10177774A (en) * | 1996-12-16 | 1998-06-30 | Fujitsu Ltd | Disk device and portable electronic equipment |
-
1999
- 1999-04-14 US US09/291,468 patent/US6319743B1/en not_active Expired - Fee Related
-
2000
- 2000-04-13 AU AU44565/00A patent/AU4456500A/en not_active Abandoned
- 2000-04-13 WO PCT/US2000/009858 patent/WO2000062030A1/en active IP Right Grant
- 2000-04-13 JP JP2000611045A patent/JP3730868B2/en not_active Expired - Fee Related
- 2000-04-13 KR KR10-2001-7013160A patent/KR100432465B1/en not_active IP Right Cessation
- 2000-04-13 EP EP00925951A patent/EP1171759A1/en not_active Withdrawn
- 2000-04-28 TW TW089106988A patent/TW448290B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4216401A (en) * | 1978-12-22 | 1980-08-05 | United Technologies Corporation | Surface acoustic wave (SAW) pressure sensor structure |
US5242863A (en) * | 1990-06-02 | 1993-09-07 | Xiang Zheng Tu | Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same |
US5518951A (en) * | 1991-08-26 | 1996-05-21 | Span Instruments, Inc. | Method for making thin film piezoresistive sensor |
Also Published As
Publication number | Publication date |
---|---|
KR20020011384A (en) | 2002-02-08 |
JP3730868B2 (en) | 2006-01-05 |
JP2002541473A (en) | 2002-12-03 |
AU4456500A (en) | 2000-11-14 |
US6319743B1 (en) | 2001-11-20 |
TW448290B (en) | 2001-08-01 |
KR100432465B1 (en) | 2004-05-22 |
EP1171759A1 (en) | 2002-01-16 |
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