WO2000057451A3 - Muffin tin style cathode element for diode sputter ion pump - Google Patents

Muffin tin style cathode element for diode sputter ion pump Download PDF

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Publication number
WO2000057451A3
WO2000057451A3 PCT/EP2000/002546 EP0002546W WO0057451A3 WO 2000057451 A3 WO2000057451 A3 WO 2000057451A3 EP 0002546 W EP0002546 W EP 0002546W WO 0057451 A3 WO0057451 A3 WO 0057451A3
Authority
WO
WIPO (PCT)
Prior art keywords
ion pump
instabilities
pump
sputter ion
emission
Prior art date
Application number
PCT/EP2000/002546
Other languages
French (fr)
Other versions
WO2000057451A2 (en
Inventor
James B Mcginn
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Priority to JP2000607245A priority Critical patent/JP2002540563A/en
Priority to EP00918829A priority patent/EP1095396A2/en
Publication of WO2000057451A2 publication Critical patent/WO2000057451A2/en
Publication of WO2000057451A3 publication Critical patent/WO2000057451A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J41/00—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas; Discharge tubes for evacuation by diffusion of ions
    • H01J41/12—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps
    • H01J41/18—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of cold cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J41/00—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas; Discharge tubes for evacuation by diffusion of ions
    • H01J41/12—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps
    • H01J41/18—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of cold cathodes
    • H01J41/20—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of cold cathodes using gettering substances

Landscapes

  • Electron Tubes For Measurement (AREA)

Abstract

Diode sputter ion pumps display instabilities like current bursts, leakage currents and arcs typically following pumping exposure to gas doses greater than the ultimate pressure of the vacuum system in which the pump is operating. The instabilities are disruptive to the devices to which the sputter ion pump is attached. The invention provides an ion pump that exhibits improved stability and reduced leakage current. The instabilities are caused by explosive arc emission and electron emission from structures like dendritic protrusions that grow on the cathode plate, whose shape and placement give rise to high electric fields. According to the invention the cathode includes a sputterable material for removing gases from the environment of the ion pump and shaped so that during operation of the ion pump the electric field in a dendritic growth region is insufficient to cause field emission from the dendrites thereby reducing instabilities in the operation of the ion pump.
PCT/EP2000/002546 1999-03-19 2000-03-17 Muffin tin style cathode element for diode sputter ion pump WO2000057451A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000607245A JP2002540563A (en) 1999-03-19 2000-03-17 Muffin-shaped electrode element for diode sputter ion pump.
EP00918829A EP1095396A2 (en) 1999-03-19 2000-03-17 Muffin tin style cathode element for diode sputter ion pump

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12531899P 1999-03-19 1999-03-19
US60/125,318 1999-03-19

Publications (2)

Publication Number Publication Date
WO2000057451A2 WO2000057451A2 (en) 2000-09-28
WO2000057451A3 true WO2000057451A3 (en) 2001-02-08

Family

ID=22419177

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2000/002546 WO2000057451A2 (en) 1999-03-19 2000-03-17 Muffin tin style cathode element for diode sputter ion pump

Country Status (3)

Country Link
EP (1) EP1095396A2 (en)
JP (1) JP2002540563A (en)
WO (1) WO2000057451A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10700207B2 (en) 2017-11-30 2020-06-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device integrating backside power grid and related integrated circuit and fabrication method
US10784079B2 (en) 2018-09-26 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Ion implantation system and source bushing thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319875A (en) * 1965-03-22 1967-05-16 Varian Associates Ion vacuum pumps
US3746474A (en) * 1971-04-02 1973-07-17 W Lloyd Ionic vacuum pump
US4631002A (en) * 1982-09-14 1986-12-23 Varian S.P.A. Ion pump
JPS6222364A (en) * 1985-07-20 1987-01-30 Anelva Corp Sputter ion pump

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319875A (en) * 1965-03-22 1967-05-16 Varian Associates Ion vacuum pumps
US3746474A (en) * 1971-04-02 1973-07-17 W Lloyd Ionic vacuum pump
US4631002A (en) * 1982-09-14 1986-12-23 Varian S.P.A. Ion pump
JPS6222364A (en) * 1985-07-20 1987-01-30 Anelva Corp Sputter ion pump

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AUDI M ET AL: "SURFACE STRUCTURE AND COMPOSITION PROFILE OF SPUTTER-ION PUMP CATHODE AND ANODE", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A,AMERICAN INSTITUTE OF PHYSICS. NEW YORK,US, vol. 4, no. 3, May 1986 (1986-05-01), pages 303 - 305, XP000955290, ISSN: 0734-2101 *
G. K. WEHNER ET AL.: "Cone formation on metal targets during sputtering.", JOURNAL OF APPLIED PHYSICS., vol. 42, no. 3, 1971, AMERICAN INSTITUTE OF PHYSICS. NEW YORK., US, pages 1145 - 1149, XP000960850, ISSN: 0021-8979 *
PATENT ABSTRACTS OF JAPAN vol. 011, no. 195 (E - 518) 23 June 1987 (1987-06-23) *
W. HAUFFE ET AL.: "Production of microstructures by ion beam sputtering.", TOPICS IN APPLIED PHYSICS., vol. 64, 1991, SPRINGER, BERLIN., DE, pages 305 - 338, XP000965335, ISSN: 0303-4216 *

Also Published As

Publication number Publication date
EP1095396A2 (en) 2001-05-02
WO2000057451A2 (en) 2000-09-28
JP2002540563A (en) 2002-11-26

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