WO2000057229A1 - Laser diode direct avec sortie par fibre optique - Google Patents

Laser diode direct avec sortie par fibre optique Download PDF

Info

Publication number
WO2000057229A1
WO2000057229A1 PCT/US2000/007510 US0007510W WO0057229A1 WO 2000057229 A1 WO2000057229 A1 WO 2000057229A1 US 0007510 W US0007510 W US 0007510W WO 0057229 A1 WO0057229 A1 WO 0057229A1
Authority
WO
WIPO (PCT)
Prior art keywords
single line
assembly
line source
stack
optical fiber
Prior art date
Application number
PCT/US2000/007510
Other languages
English (en)
Inventor
Larry R. Marshall
Original Assignee
Iridex Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iridex Corporation filed Critical Iridex Corporation
Publication of WO2000057229A1 publication Critical patent/WO2000057229A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Definitions

  • This invention relates generally to stack diode linear arrays, and more particularly to optical assemblies using stack diode linear arrays to form a single line source.
  • the asymmetry of a single diode array produces an output that is difficult to couple into a fiber or other optical elements, including but not limited to gain media. While the m 2 in the vertical direction (the fast axis) is close to unity the m 2 in the horizontal direction (the slow axis) can approach 1000. Power can be scaled by stacking linear arrays which degrades the m 2 in the vertical direction. For every additional stack of linear array the output becomes more problematic to couple into fibers and optical elements.
  • stacked diode arrays are as a pump source from slab lasers.
  • the optical cavity of the laser transforms the poor beam quality pump light of the stacked diode array into high beam quality laser output.
  • the stacked diode array is used to direct a high amount of power into a relatively large area such as in soldering and welding.
  • the output of the stacked diode array is coupled through a tapered lens duct which directs the light into an area approximately half the emitting area.
  • this reduction in beam size is accompanied by a substantial increase in numerical aperture that exceeds the numerical aperture of commercially available fibers.
  • this beam size reduction is a hair removal device with a 10x10 mm aperture and a numerical aperture of 0.7.
  • wavelengths that are strongly absorbed by tissue are preferred and CO 2 lasers have found wide utility.
  • laser power exceeds approximately 100 W the wavelength is less important for surgical efficacy. While it is difficult to scale the power of a single laser, it is relatively easy to increase the power of diodes by stacking. If this output could be coupled to a fiber it would be a powerful surgical tool.
  • lasers have been used for dermatological procedures, including Argon lasers, CO 2 lasers, Nd.YAG lasers, copper vapor lasers, ruby lasers and dye lasers.
  • U.S. Pat. No. 4,829,262 to Furumoto describes a method of constructing a dye laser used in dermatology applications.
  • Two skin conditions which may be treated by laser radiation are external skin irregularities such as local differences in the pigmentation or structure of the skin, and vascular disorders lying deeper under the skin which cause a variety of skin abnormalities including port wine stains, telangiectasias, leg veins and cherry and spider angiomas.
  • Laser treatment of these skin disorders generally includes localized heating of the treatment area by absorption of laser radiation. Heating the skin changes or corrects the skin disorder and causes the full or partial disappearance of the skin abnormality.
  • Certain external disorders such as pigmented lesions can also be treated by heating the skin very fast to a high enough temperature to evaporate parts of the skin. Deeper-lying vascular disorders are more typically treated by heating the blood to a high enough temperature to cause it to coagulate. The disorder will then eventually disappear.
  • a pulsed radiation source is often used. The depth the heat penetrates in the blood vessel is controlled by controlling the pulse width of the radiation source.
  • the absorption and scattering coefficients of the skin also affect the heat penetration. These coefficients are a function of the constituents of skin and the wavelength of the radiation. Specifically, the absorption coefficient of light in the epidermis and dermis tends to be a slowly varying, monotonically decreasing function of wavelength. Thus, the wavelength of the light should be chosen so that the absorption coefficient is optimized for the particular skin condition and vessel size being treated.
  • lasers are monochromatic.
  • a laser of a given wavelength may be effectively used to treat a first type of skin pigmentation disorder, but, if the specific wavelength of the laser is not absorbed efficiently by skin having a second type of disorder, it will be ineffective for the second type of skin disorder.
  • lasers are usually complicated, expensive to manufacture, large for the amount of power delivered, unreliable and difficult to maintain.
  • the wavelength of the light also affects vascular disorder treatment because blood content in the vicinity of the vascular disorders varies, and blood content affects the absorption coefficient of the treatment area.
  • Oxyhemoglobin is the main chromophore which controls the optical properties of blood and has strong absorption bands in the visible region. More particularly, the strongest absorption peak of oxyhemoglobin occurs at 418 nm and has a band- width of 60 nm. Two additional absorption peaks with lower absorption coefficients occur at 542 and 577 nm. The total band-width of these two peaks is on the order of 100 nm. Additionally, light in the wavelength range of 500 to 600 nm is desirable for the treatment of blood vessel disorders of the skin since it is absorbed by the blood and penetrates through the skin.
  • wavelengths up to 1000 nm are also effective since they can penetrate deeper into the skin, heat the surrounding tissue and, if the pulse- width is long enough, contribute to heating the blood vessel by thermal conductivity. Also, longer wavelengths are effective for treatment of larger diameter vessels because the lower absorption coefficient is compensated for by the longer path of light in the vessel.
  • vascular and lymphatic channels provide for nutrition, healing and transport. Sweat and sebaceous glands provide respectively for thermal control and lubrication. Pigmented structures provide for sun protection. Hair follicles and individual hairs provide for insulation, protection and individual differentiation.
  • each hair is originated by germinative fibroblast cells in the basal layer of the epidermis.
  • the hair grows both outwards and inwards during its growth cycle, and the follicle develops as an encapsulating pouch extending beyond the epidermis and down several millimeters in depth to the subcutaneous fat. Hair remains attached to the base of the follicle, where a capillary network develops to provide nourishment.
  • hair matrix cells divide rapidly and migrate upwards to form the shaft.
  • a subsequent catagenic phase is marked by cessation of mitosis, and the reabsorption of the lower part of the follicle. Capillary nourishment is greatly reduced during this phase.
  • the hair falls out and a new hair may replace it in a new growth cycle. At any particular time, approximately 10% of scalp hairs will be in telogenic mode.
  • the growth cycle varies with anatomical location from as little as 3 months for facial hair to as much as 7 years on the scalp. Hair in high friction pubic areas may be retained by the body as protection and may not shed at all.
  • the hair follicle consists of a mixture of germinative cells and melanocytes. Sebaceous cells empty into the follicle, providing a lipid-rich environment.
  • the follicle is typically 0.1 mm in diameter and may extend to 4 mm in depth.
  • the average hair diameter within the follicle is 60 ⁇ m. Hair itself is generated as an accumulation of dead (keratinized) cells. Structurally it consists of two or three discrete layers, as shown in FIG. 1.
  • the outer cuticle layer consists of a single layer of overlapping flat cells like the scales of a fish. This acts as a protective barrier.
  • An inner cortex layer contains any pigment which may be present (pigment may also reside in melanocytes lining the follicle).
  • Pigment may exist as two melanin forms. Eumelanin is responsible for brown/black coloration and pheomelanin is responsible for red/blonde coloration. Larger, fully developed terminal hairs also contain a core known as the medulla. In the lower follicular region, a bulge is formed where the arrector pili muscle contacts the follicle. This muscle controls movement and orientation of the hair and may, under appropriate stimuli, render the hair vertical with respect to the skin surface. The bulge area has one of the fastest rates of cell division found in mammals, stimulated by growth factors from the lower papilla area.
  • Electrolysis is used by an estimated 1 million women in the United States. Two techniques dominate the electrolysis field. Galvanic (DC) current can be passed down a fine needle inserted into the follicle. This converts tissue saline locally to sodium hydroxide, which destroys the follicle. Alternatively, the thermolysis technique utilizes an AC current to directly heat and thereby destroy the papilla. Some clinicians utilize a combination approach of these two electrolysis techniques. All electrolysis methods treat a single follicle at any time, in a painful procedure which can require analgesia. Disposable needles are used in this non-permanent, time consuming, multiple treatment technique. Several contemporary photonics techniques have been evaluated. In
  • Thermo trex Corporation was assigned two Hair Removal Device and Method patents (U.S. Pat. Nos. 5,226,907 and 5,425,728) based on the use of an externally applied chromophore to enhance local absorption of laser light.
  • a topically applied substance is said to penetrate to the full depth of the root of the follicle.
  • the substances cited include permanent hair dyes, suspensions of carbon particles and photosensitizing compounds.
  • a subsequent application of laser light is said to induce a photothermal reaction which destroys the follicle and a surrounding tissue area.
  • the optical target is the melanin within the inner cortex layer and the pigment-bearing melanocytes lining the follicle.
  • High fluences of up to 60 J/cm 2 are utilized in large spot sizes, with short pulse widths of the order of 150 ⁇ sec and a wavelength of 694 nm.
  • This technique employs a number of natural phenomena to enhance effect on the deep follicular component. A large applied spotsize and high fluence allow for maximum depth of penetration.
  • Concurrent cooling spares bulk tissue structures from the edema and general damage which can result from the use of fluences of this magnitude. Intimate index-matched contact of the custom handpiece with the tissue minimizes reflection loss. However, the short pulse widths used in this approach are unlikely to efficiently transfer heat to the entire follicular structure.
  • the Ruby laser is not readily capable of the requisite millisecond-domain pulses necessary to effect a true thermal mechanism.
  • a third approach, utilizing the Q-Switched Ruby laser was disclosed by Nardo Zaias in his 1990 U.S. Pat. No. 5,059,192. This patent cited the use of a Q-Switched Ruby laser at 694 nm, with 3-8 mm spotsize and around 8 J/cm 2 .
  • Pulsewidth was in the range 30-40 nanoseconds. Light energy administered in such a short pulsewidth will be well retained in the melanocytes lining the follicle. This approach will provide potential for melanocyte destruction and perhaps permanent depigmentation or destruction of the hair, but likely will not kill the follicle itself, since the pulsewidth is insufficiently long to conduct heat away from the targeted melanin granules. Other approaches have been described. In 1967, U.S. Pat. No. 3,538,919 was filed by R. Meyer. Meyer cited the placement of a fiber directly into the follicle into which a total of 30-40 J/cm 2 of light was subsequently launched.
  • This fluence was administered over a period of 1 -2 milliseconds, preferably by a normal mode Ruby or Nd.YAG laser.
  • Use of a 50 ⁇ m fiber was cited. This fiber diameter would theoretically fit into a 100 ⁇ m follicle containing a 50 ⁇ m hair, but with some difficulty. Also, the technique would be time consuming to administer, on a single hair-by-hair process.
  • the selective destruction of the papillary plexus is unlikely to be practical using a narrow beam Argon laser, with its limited penetration depth capabilities, since this supply resides at several millimeter depth and is shielded by the overlying follicular structure. Indeed, no vascular specific lasers are likely to exhibit adequate dermal penetration.
  • an object of the invention is to provide an optical assembly for a stack of diode linear arrays to produce a single line source.
  • Another object of the invention is to provide an optical assembly of one or more stacks of diode linear arrays with array producing a single line source.
  • Yet another embodiment of the invention is to provide an optical assembly of one or more stacks of diode linear arrays coupled to a plurality of optical fibers.
  • Still another object of the invention is to provide an optical assembly using one or more stacks of diode linear arrays producing reformatted single line sources with an improved overall m 2 .
  • the stack of diode linear arrays includes a plurality of diode linear arrays that produce a plurality of line output beams.
  • a plurality of microlenses are positioned adjacent to the plurality of diode linear arrays. The microlenses collimate and steer the plurality of line output beams to form a first single line source.
  • the optical assembly includes two or more stacks of diode linear arrays. Each of an array is coupled to an optical fiber.
  • optical elements are included to create reformatted single line sources with an improved overall m 2 .
  • the optical assembly includes one or more stacks of diode linear arrays, one or more optical fibers that are each coupled to a stack, optical elements to create the reformatted single line sources and a handpiece coupled to distal ends of the optical fibers.
  • Figure 1 is a schematic diagram of an optical assembly of the present invention that includes a stack of diode linear arrays positioned adjacent to a plurality of microlenses.
  • Figure 2(a) is a schematic diagram of the optical assembly of Figure 1 in combination with lens and an optical fiber.
  • Figure 2(b) is a schematic diagram of an embodiment of an optical assembly of the present invention with two stacks of diode linear arrays with microlenses.
  • Figure 3 is a schematic diagram of the output beam from the embodiment of Figure 2(b) where the output beam is reformatted into two stacked beams.
  • Figure 4(a) is a schematic diagram illustrated the slicing and stacked on the single line source from the optical assembly of Figures 1, 2 or 3.
  • Figure 4(b) is a cross-sectional view from Figure 4(a) illustrated the relationship of the two mirrors that slice and stack the single line source.
  • Figure 4(c) is a perspective view of one of the mirrors from Figure 4(a) illustrated the cut angle of an edge of the mirror.
  • Figure 5 illustrates an embodiment of the optical assembly of Figure 1 with the inclusion of a prism array to create a reformatted and stacked output beam.
  • Figure 6 illustrates an embodiment of the optical assembly of Figure 1 with the inclusion of a polarizing cube and a half- wave plate to create the reformatted output beam.
  • Figure 7 illustrates an optical assembly of the present invention that includes three diode linear arrays each coupled to a separate optical fiber.
  • Figure 8 illustrates different geometric arrangements of multiple optical fibers utilized with the optical assembly of the present invention.
  • Figure 9 illustrates an embodiment of an optical assembly of the present invention that includes two optical fibers and a single set of optical elements to create a reformatted single line source that is launched into an optical fiber.
  • Figure 10 is a schematic diagram of an optical handpiece that incorporates the optical assembly of Figure 1.
  • an optical assembly 10 includes a stack of diode linear arrays 12 which includes a plurality of individual stacked diodes 14. Each diode 14 produces a line output beam 15.
  • the individual diodes 14 can be 200 ⁇ m emitters on 400 ⁇ m centers forming a linear diode array 10 mm long and 1 ⁇ m high available from OptoPower Corporation, Arlington, Arizona.
  • One example of a stack 12 is ten of the linear arrays described in the preceding sentence, each mounted on a "monsoon plate" which water cools the individual diodes. This stack is 10 mm wide, 20 mm high with a vertical spacing of 1.8 mm between linear arrays.
  • the fill factor of diode stack 12 is less than 100%.
  • the fill factor can be increased by expanding output beams 15 and collimating in the vertical direction.
  • each stack 12 is not the same in both the horizontal and vertical directions.
  • m 2 in the vertical for the entire stack 12 is as follows:
  • m 2 in the vertical is poor because the fill factor is low.
  • the fill factor is about 1/2000.
  • microlens 18 Coupled to each diode 14 in stack 12 is a microlens 18.
  • a suitable microlens 18 is commercially available from LEMO, Frankfurt, Germany and Blue Sky Research, Montana.
  • Microlenses 18 can be piano/convex cylinder lenses, molded aspherics and un-clad fibers. Microlenses 18 can be physically attached to individual diodes 14 by gluing, mounting on a mechanical structure with flexure mounts or push/pull screws to align and lock the lenses in the position, and the like.
  • Microlenses 18 collimate and steer the plurality of line output beams 15 in each stack 12 to form a single line source 20.
  • a cylinder lens 22 that collimate the plurality of line output beams 15 into the single line source 20.
  • Cylinder lens 22 can be either a negative or positive lens, depending on its positioning to a crossing of the plurality of line output beams 15.
  • Gaps 16 are eliminated with the creation of single line source 20.
  • the fill factor of single line source 20 is about 100%.
  • Single line source 20 has an overall m 2 that is improved in one of the horizontal or vertical directions. In the example given above, the fill factor of stack 12 is improved from 1/2000 to 1 by the creation of single line source 20.
  • single line source 20 can have dimensions of 0.5-5 mm high and 10-20 mm wide.
  • an optical fiber 24 is included and positioned to receive the launching of single line source 20 into a proximal end 26 of the first optical fiber 24.
  • the dimensions of single line source 20 and proximal end 26 can be in the range of 5-20 mm square.
  • a lens 27, such as a molded aspheric lens, is included. In this embodiment, the dimensions of proximal end 26 are greater than or equal to 1.5 mm.
  • Single line source 20 can be launched into proximal end 26 of optical fiber 24 at a numerical aperture approaching a limiting numerical aperture of the first optical fiber.
  • One example of the relative numerical apertures is in the range of 0.2-0.7.
  • optical assembly 10 includes first and second stacks of diode linear arrays 12 and 13 each producing single line sources 20 and 21 respectively that are joined to form a continuous line of higher power than the embodiment of Figure 2(a).
  • Single line source 20 can have an m 2 larger in one of a horizontal or vertical direction than the other.
  • single line source can be reformatted with an improved overall m 2 .
  • single line source 20 is shown as being reformatted into two stacked beams with an overall height of 200-1500 ⁇ m.
  • the focused beams are shown as being non-overlapped.
  • the stacked beams can be overlapped to form a single beam that has half the overall dimension and an increased numerical aperture.
  • single line source 20 can be reformatted into more than two stacked beams.
  • Single line source 20 is reformatted and sliced up so that reformatted single line source 28 becomes symmetrical. In this embodiment, reformatted single line source 28 has an improved brightness level equal to the ratio of proximal end 26 to stack dimensions.
  • optical elements can be used to improve the focusability of single line source 20 into optical fiber 24 including but not limited to a pair of lenses, a prism array, a half wave plate, polarization cube, a prism with multiple reflection faces, and the like.
  • single line source 20 is incident on a first mirror 30 and a second mirror 32.
  • Mirrors 30 and 32 splice single line source 20 and stacks it.
  • One-half of single line source 20 is not reflected by either mirror 30 or 32 and passes through.
  • the other half of single line source 20 is reflected off of mirror 30 to mirror 32 and is then stacked along with the first half of single line source 20.
  • Mirrors 30 and 32 can be formed from a unitary construction. In this embodiment, there is less loss and is particularly suitable for high power.
  • Mirrors 30 and 32 have a tilt relative to each other. Because of the tilt, first mirror 30 has a non-perpendicular, angle cut first edge.
  • the cut edge of mirror 30 causes single line source 20 to see a straight edge. Without the cut, the effect would be a single line source 20 with a edge and the creation of a wider apparent beam as well as an increase in m h 2 .
  • the cut edge of mirror 30 reduces m h 2 .
  • more than two mirrors can be used to create three or more reformatted stacked beams 28.
  • the cut edge of mirror 30 can be angled to reshape the reflected beam into a profile more closely matching optical fiber 24. When multiple reflectors are used, the cross-section of the sliced and stacked beams can be shaped and/or pieced together to match the cross-section of optical fiber 24.
  • a prism array 34 has two or more reflective surfaces 36 which serve to redirect single line source 20 to a reformatted single line source 28 as disclosed in U.S. Patent Application, S.N., 09/229,461, filed January 12, 1999, fully incorporated herein by reference.
  • Prism array is positioned on a mount 38 with a longitudinal axis 40.
  • Prism array 36 is positioned just above a mount surface 42 by a backing plate 44.
  • Another embodiment for created reformatted single line source 28 is shown in Figure 6.
  • reformatted single line source 28 is a single beam that is not stacked.
  • a half-wave plate 46 and a turning mirror 48 are provided.
  • One-half of single line source 20 is incident on a polarizing cube 48.
  • the other half of single line source is incident on half- wave plate 46 and turned 90°.
  • single line source has an improved m 2 at the expense of polarization that is enhanced using prism array 34 of Figure 5.
  • FIG. 7 a plurality of stack of diode linear arrays 12 can be used. As illustrated in Figure 7, three stacks 12, 50 and 52 are shown. It will be appreciated that the present invention can include any number of stack diode linear arrays.
  • Each stack 12, 50 and 52 produces a single line source 20, 54 and 56 that is launched into an optical fiber 24, 58 and 60 respectively.
  • Single line sources 20, 54 and 56 are reformatted with one or more of the optical elements illustrated in Figures 4(a)-6.
  • Distal ends 62, 64 and 66 of optical fibers 24, 58 and 60 are coupled to a handpiece 68.
  • a plurality of collimating lenses 65, 67 and 69 collimate the outputs from optical fibers 24, 58 and 60.
  • a focusing lens 71 can be positioned in handpiece 68 that focuses reformatted single line sources 20, 54 and 56 to a single point 72 with dimensions in the range of 1-5 mm to 10 mm.
  • Handpiece 68 is dimensioned and has a weight that permits the surgeon to readily hold handpiece 68 for long treatment periods of time without fatigue.
  • Handpiece 68 can have a diameter of 0.25-2 in., a length of 2-8 in. and a weight of 2- 8 oz.
  • any number of optical fibers can be used with the present invention with their distal ends arranged in a variety of different geometric configurations.
  • a linear, rectangular, square, triangular or circular single point 72 can be created.
  • two or more optical fibers 20 and 58 can use a single set of optical elements to create reformatted single line source 28. Reformatted single line source 28 can then be launched into a single optical fiber 24.
  • stack 12 is coupled to handpiece 68.
  • Stack 12 can be positioned in an interior or at an exterior of handpiece 68.
  • optical assembly 10 is used for hair removal.
  • the goal of the treatment is to irreversibly damage the follicular structures while leaving the surrounding normal skin intact and unaffected.
  • parameters are chosen to provide optimum selectivity of damage to the target tissue only.
  • the damage is thermal in nature, calculated as necessary to effect a degree of controlled conduction to surrounding structures.
  • the epidermis and peri-vascular dermis are spared while damage is administered, in a controlled fashion, uniformly throughout the targeted follicular structures. This is turn minimizes any complications associated with wound formation or unwanted cosmetic outcome. All hairs within the irradiated area are treated simultaneously, eliminating the need for a tedious individualistic approach. With 1000 W of treatment radiation at about 810 nm typical treatment spot sizes of 10 mm diameter can be used.
  • the spot size can be increased or decreased by varying focusing lens 71 of Figure 7. Additionally, spot size can be changed by varying the distance between distal ends 62, 64 and 66 of optical fibers 24, 58 and 60 and collimating lenses 65, 67 and 69. Further, the surgeon can vary the distance between the treatment site and handpiece 68 to vary the spot size. Spot size variation is used to treat different skin pigmentations.
  • a gel can be used on the skin and serve as a heat sink to reduce the thermal diffusion time of the skin.
  • the gel prevents the skin from becoming too hot.
  • the gel can include a material that changes color after it has irradiated with treatment light from optical assembly 10. This provides an indicator to the physician where treatment has been delivered and reduces the chance of overexposing the skin to electromagnetic energy.
  • the gel changes its opacity to electromagnetic energy when a predetermined amount of electromagnetic energy has been delivered. This reduces the chance of overexposure of the skin to energy and provides a mechanism to meter the correct dosage of energy to damage the hair follicle without damaging the skin.
  • the gel is not used to actively cool the skin. Instead, the gel provides a heat sink on the skin surface and reduces the skin thermal diffusion time.
  • Light entering the skin can be scattered in a forward direction towards the hair follicles.
  • Back-scattered light moves in the opposite direction and heats the skin.
  • the gel is used to substantially increase the critical angle of the skin/gel interface. This allows the trapped light to escape and avoids heating the epidermis.
  • optical assembly 10 can be used to treat other conditions including but not limited to psoriasis, warts, wrinkles, smooth skin contour, leg veins, and the like.
  • leg veins When leg veins are treated the shape of the treatment area is as illustrated in Figure 8 to provide a linear output beam that matches the profile of the vein.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Laser Surgery Devices (AREA)

Abstract

La présente invention concerne un assemblage optique comprenant une pile de barrettes de diodes produisant plusieurs faisceaux de sortie linéaire. Une première série de microlentilles placée adjacente à la pile permet de collimater et d'orienter la série de faisceaux de sortie linéaire et de former une source linéaire unique.
PCT/US2000/007510 1999-03-23 2000-03-21 Laser diode direct avec sortie par fibre optique WO2000057229A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27535699A 1999-03-23 1999-03-23
US09/275,356 1999-03-23

Publications (1)

Publication Number Publication Date
WO2000057229A1 true WO2000057229A1 (fr) 2000-09-28

Family

ID=23051945

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/007510 WO2000057229A1 (fr) 1999-03-23 2000-03-21 Laser diode direct avec sortie par fibre optique

Country Status (1)

Country Link
WO (1) WO2000057229A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065190A2 (fr) * 2001-02-10 2002-08-22 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Dispositif de modelage de faisceau permettant le modelage de la section d'un faisceau lumineux, et systeme permettant l'introduction dans une fibre optique d'un faisceau lumineux issu d'une source de lumiere laser allongee, et ayant une section allongee
WO2002075432A1 (fr) * 2001-03-17 2002-09-26 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Dispositif de formation de faisceau, systeme permettant d'injecter un faisceau lumineux dans une fibre optique et unite de rotation de faisceau destinee a un tel dispositif de formation de faisceau ou a un tel systeme
GB2378576A (en) * 2001-08-09 2003-02-12 Richard Knight Light emitting device
EP1403984A2 (fr) * 2002-09-24 2004-03-31 Kabushiki Kaisha TOPCON Source de lumière laser et appareil d'inspection de surface qui l'utilise
WO2004111702A1 (fr) * 2003-06-11 2004-12-23 Coherent, Inc. Appareil permettant de reduire l'espacement des faisceaux produits par des barres de diodes laser empilees
WO2005006054A2 (fr) * 2003-07-10 2005-01-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Ensemble pour la transformation d'un champ de rayonnement optique
US7006549B2 (en) 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
US7010194B2 (en) 2002-10-07 2006-03-07 Coherent, Inc. Method and apparatus for coupling radiation from a stack of diode-laser bars into a single-core optical fiber
EP1742168A1 (fr) * 2005-07-05 2007-01-10 Sick Ag Senseur opto-électronique
DE102012007601A1 (de) * 2012-04-16 2013-10-17 Innovavent Gmbh Optisches System für eine Anlage zur Bearbeitung von Dünnfilmschichten
EP2667238A3 (fr) * 2012-05-25 2015-12-23 Corning Incorporated Détartrage de rapport d'aspect étendu à émetteur unique
WO2019158497A1 (fr) * 2018-02-13 2019-08-22 Innovavent Gmbh Système optique de traitement d'au moins un faisceau laser incident

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428647A (en) * 1982-11-04 1984-01-31 Xerox Corporation Multi-beam optical system using lens array
US4458683A (en) * 1981-05-26 1984-07-10 Agency Of Industrial Science & Technology Focal point direct observation type laser scalpel device
US5168401A (en) * 1991-05-07 1992-12-01 Spectra Diode Laboratories, Inc. Brightness conserving optical system for modifying beam symmetry
EP0565843A1 (fr) * 1992-04-16 1993-10-20 ADLAS GMBH & CO. KG Dispositif pour focalisation et couplage du rayonnement d'un laser à semiconducteur dans des fibres optiques
EP0601485A2 (fr) * 1992-12-07 1994-06-15 Eastman Kodak Company Moyens optiques pour l'utilisation de réseaux de diode laser dans des imprimantes lasers à rayons multiples et dans des appareils d'enregistrement
US5369661A (en) * 1991-02-07 1994-11-29 Nippon Steel Corporation Semiconductor laser-pumped solid state laser system and optical coupling system coupling semiconductor laser with optical fiber
US5541951A (en) * 1994-11-14 1996-07-30 Intelligent Surgical Lasers, Inc. Device and method for high-power end pumping
US5617492A (en) * 1996-02-06 1997-04-01 The Regents Of The University Of California Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array
EP0805368A1 (fr) * 1996-04-30 1997-11-05 Thomson-Csf Dispositif de mise en forme d'un faisceau plat
US5825551A (en) * 1993-11-30 1998-10-20 The University Of Southampton Beam shaper

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4458683A (en) * 1981-05-26 1984-07-10 Agency Of Industrial Science & Technology Focal point direct observation type laser scalpel device
US4428647A (en) * 1982-11-04 1984-01-31 Xerox Corporation Multi-beam optical system using lens array
US5369661A (en) * 1991-02-07 1994-11-29 Nippon Steel Corporation Semiconductor laser-pumped solid state laser system and optical coupling system coupling semiconductor laser with optical fiber
US5168401A (en) * 1991-05-07 1992-12-01 Spectra Diode Laboratories, Inc. Brightness conserving optical system for modifying beam symmetry
EP0565843A1 (fr) * 1992-04-16 1993-10-20 ADLAS GMBH & CO. KG Dispositif pour focalisation et couplage du rayonnement d'un laser à semiconducteur dans des fibres optiques
EP0601485A2 (fr) * 1992-12-07 1994-06-15 Eastman Kodak Company Moyens optiques pour l'utilisation de réseaux de diode laser dans des imprimantes lasers à rayons multiples et dans des appareils d'enregistrement
US5825551A (en) * 1993-11-30 1998-10-20 The University Of Southampton Beam shaper
US5541951A (en) * 1994-11-14 1996-07-30 Intelligent Surgical Lasers, Inc. Device and method for high-power end pumping
US5617492A (en) * 1996-02-06 1997-04-01 The Regents Of The University Of California Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array
EP0805368A1 (fr) * 1996-04-30 1997-11-05 Thomson-Csf Dispositif de mise en forme d'un faisceau plat

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065190A3 (fr) * 2001-02-10 2003-11-20 Hentze Lissotschenko Patentver Dispositif de modelage de faisceau permettant le modelage de la section d'un faisceau lumineux, et systeme permettant l'introduction dans une fibre optique d'un faisceau lumineux issu d'une source de lumiere laser allongee, et ayant une section allongee
US6816318B2 (en) 2001-02-10 2004-11-09 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Beam shaping device for shaping the cross-section of a light beam and system for launching into an optical fiber a light beam having an elongated cross-section and being emitted by an elongated laser beam source
WO2002065190A2 (fr) * 2001-02-10 2002-08-22 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Dispositif de modelage de faisceau permettant le modelage de la section d'un faisceau lumineux, et systeme permettant l'introduction dans une fibre optique d'un faisceau lumineux issu d'une source de lumiere laser allongee, et ayant une section allongee
WO2002075432A1 (fr) * 2001-03-17 2002-09-26 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co.Kg Dispositif de formation de faisceau, systeme permettant d'injecter un faisceau lumineux dans une fibre optique et unite de rotation de faisceau destinee a un tel dispositif de formation de faisceau ou a un tel systeme
US7085053B2 (en) 2001-03-17 2006-08-01 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Beam shaping device, system for launching a light beam into an optical fiber, and beam rotation unit for such a beam shaping device or such a system
GB2378576A (en) * 2001-08-09 2003-02-12 Richard Knight Light emitting device
GB2378576B (en) * 2001-08-09 2006-03-08 Richard Knight Light emitting device
EP1403984A2 (fr) * 2002-09-24 2004-03-31 Kabushiki Kaisha TOPCON Source de lumière laser et appareil d'inspection de surface qui l'utilise
CN100367055C (zh) * 2002-09-24 2008-02-06 株式会社拓普康 表面检查装置的激光光源装置及其表面检查装置
EP1403984A3 (fr) * 2002-09-24 2005-01-12 Kabushiki Kaisha TOPCON Source de lumière laser et appareil d'inspection de surface qui l'utilise
US7010194B2 (en) 2002-10-07 2006-03-07 Coherent, Inc. Method and apparatus for coupling radiation from a stack of diode-laser bars into a single-core optical fiber
US6993059B2 (en) 2003-06-11 2006-01-31 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
US7006549B2 (en) 2003-06-11 2006-02-28 Coherent, Inc. Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
WO2004111702A1 (fr) * 2003-06-11 2004-12-23 Coherent, Inc. Appareil permettant de reduire l'espacement des faisceaux produits par des barres de diodes laser empilees
WO2005006054A3 (fr) * 2003-07-10 2005-11-24 Fraunhofer Ges Forschung Ensemble pour la transformation d'un champ de rayonnement optique
WO2005006054A2 (fr) * 2003-07-10 2005-01-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Ensemble pour la transformation d'un champ de rayonnement optique
EP1742168A1 (fr) * 2005-07-05 2007-01-10 Sick Ag Senseur opto-électronique
US7427743B2 (en) 2005-07-05 2008-09-23 Sick Ag Optoelectronic sensor
DE102012007601A1 (de) * 2012-04-16 2013-10-17 Innovavent Gmbh Optisches System für eine Anlage zur Bearbeitung von Dünnfilmschichten
WO2013156384A1 (fr) 2012-04-16 2013-10-24 Innovavent Gmbh Système optique pour une installation destinée à traiter des couches de film mince
EP2667238A3 (fr) * 2012-05-25 2015-12-23 Corning Incorporated Détartrage de rapport d'aspect étendu à émetteur unique
WO2019158497A1 (fr) * 2018-02-13 2019-08-22 Innovavent Gmbh Système optique de traitement d'au moins un faisceau laser incident

Similar Documents

Publication Publication Date Title
US6235015B1 (en) Method and apparatus for selective hair depilation using a scanned beam of light at 600 to 1000 nm
US5630811A (en) Method and apparatus for hair removal
JP5564096B2 (ja) 皮膚の療法ｅｍｒ治療を行う方法及び装置
US5968034A (en) Pulsed filament lamp for dermatological treatment
Lask et al. Laser-assisted hair removal by selective photothermolysis preliminary results
US6605080B1 (en) Method and apparatus for the selective targeting of lipid-rich tissues
AU742982B2 (en) Pulsed filament lamp for dermatological treatment
US6383176B1 (en) Hair removal device and method
US5632741A (en) Epilation system
US7041094B2 (en) Tissue treatment device and method
US20050049582A1 (en) Method and apparatus for fractional photo therapy of skin
CA2251555A1 (fr) Systeme de laser a l'alexandrite, destine au traitement d'echantillons dermatologiques
US20070239147A1 (en) Method, system and apparatus for dermatological treatment and fractional skin resurfacing
WO2000057229A1 (fr) Laser diode direct avec sortie par fibre optique
US20050065503A1 (en) Method and apparatus for reducing the appearance of skin markings
Weir et al. Photo-assisted epilation—review and personal observations
WO2001074265A1 (fr) Traitement de troubles vasculaires au laser a deux longueurs d'ondes
US6267755B1 (en) Method of hair depilation
Vittorio et al. Laser hair removal
Childs et al. Optimization of a Laser Diode for Permanent Hair Reduction

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): DE GB JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase