WO2000043159A1 - Improved polishing pads and methods relating thereto - Google Patents

Improved polishing pads and methods relating thereto Download PDF

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Publication number
WO2000043159A1
WO2000043159A1 PCT/US2000/001495 US0001495W WO0043159A1 WO 2000043159 A1 WO2000043159 A1 WO 2000043159A1 US 0001495 W US0001495 W US 0001495W WO 0043159 A1 WO0043159 A1 WO 0043159A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
pad
accordance
polishing layer
polishing surface
Prior art date
Application number
PCT/US2000/001495
Other languages
French (fr)
Inventor
David B. James
Lee Melbourne Cook
Arthur Richard Baker
Original Assignee
Rodel Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Holdings, Inc. filed Critical Rodel Holdings, Inc.
Priority to EP00906976A priority Critical patent/EP1161322A4/en
Priority to JP2000594606A priority patent/JP2002535843A/en
Publication of WO2000043159A1 publication Critical patent/WO2000043159A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B24D13/02—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery
    • B24D13/12—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by their periphery comprising assemblies of felted or spongy material, e.g. felt, steel wool, foamed latex
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
    • B24D13/147—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face comprising assemblies of felted or spongy material; comprising pads surrounded by a flexible material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties

Definitions

  • the present invention relates generally to polishing pads useful in the manufacture of semiconductor devices, memory disks or the like. More particularly, the polishing pads of the present invention comprise a base substrate which supports a thin hydrophilic polishing layer, the polishing layer having an particular surface texture and topography.
  • U.S. Patent No. 4,927,432 describes a polishing pad comprising a porous thermoplastic resin which is reinforced with a fibrous network such as a felted mat; the polishing material is modified by coalescing the resin among the fibers, preferably by heat treatment, to increase the porosity and hardness of the material as well as increasing the surface activity of the resin.
  • the present invention is directed to polishing pads having: 1. a base substrate; and 2. a thin hydrophilic polishing layer.
  • the polishing layer has a particular surface texture and topography. "Texture” is intended to mean surface characteristics on a scale of less than 10 microns, and “surface topography” is intended to mean surface characteristics of 10 microns or more.
  • the base substrates of the present invention can comprise a single layer or multiple layers and can comprise a combination of layers that are bonded together. What is critical is that at least a portion of the base layer defines a planarity even when a non-uniform pressure of 10 pounds per square inch is applied against the base layer.
  • a base layer is bonded to a polishing layer and the combination is slid over a rigid component such as a platen or plate during polishing.
  • a preferred base layer comprises a resilient layer of plastic, particularly an engineering plastic, such as a polyamide, polyimide, and/or polyester, particularly poly(ethylene terephthalate) or "PET".
  • the layer is preferably a flexible web capable of being pulled from a roll or easily wound into a roll.
  • the base substrate of the present invention preferably has a thickness of less than 1 millimeter.
  • the support layer has a thickness of less than 0.5 millimeters, more preferably less than 300 microns.
  • the thin polishing layers of the present invention are less than 500 microns, more preferably less than 300 microns and yet more preferably less than 150 microns and comprise a random surface texture comprising pores and/or micro- voids of varying sizes and dimensions.
  • a preferred method of forming the thin polishing layer is by coagulation of a polymer onto the support (base) layer, such as in accordance with the "Process For Producing Microporous Films and Coatings" described in U.S. Patent No. 3,100,721 which is hereby incorporated into this specification by reference.
  • the thin polishing layer is, printed, sprayed, cast, molded, ink-jet printed or otherwise coated onto the support layer and thereafter solidified by cooling or by a curing reaction.
  • a thin base layer and a thin polishing layer can provide ultra high performance polishing, due to a more precise and predictable polishing interaction when a rigid support presses the thin polishing pad against (and the pad is moved in relation to) a substrate to be polished.
  • This polishing pad can be manufactured to very tight tolerances and (together with the rigid support) can provide predictable compressibility and planarization length.
  • Planarization length is intended to mean the span across the surface of a polishing pad which lies substantially in a single plane and remains in a single plane during polishing, such that as high features on a wafer surface are polished, features of lesser height do not polish unless or until the higher features are diminished to the height of the shorter features.
  • polishing pads having a thickness greater than 1.5 millimeters have a much higher propensity for unpredictable warping or otherwise deviations from their original shape. Such warping and/or deviations are generally more detrimental to ultra precision polishing performance than pads having a thin base substrate in accordance with the present invention.
  • thin polishing layers in accordance with the present invention are less susceptible to unpredictable polishing performance due to material fatigue during the polishing operation. For the polishing layers of the present invention, fatigue effects are much more predictable and generally have a diminished affect on polishing performance.
  • thin polishing layers will tend to fully saturate and reach a steady state equilibrium with a polishing slurry much more quickly and predictably than conventional polishing pads.
  • the polishing layer is substantially free of macro-defects.
  • Micro-defects are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of greater than 25 microns.
  • Micro- asperities are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of less than 10 microns. It has been surprisingly discovered that micro- asperities are generally advantageous in ultra precision polishing, particularly in the manufacture of semi-conductor devices, and in a preferred embodiment, the polishing layer provides a large number of micro-asperities at the polishing interface.
  • the polishing layers of the present invention comprise a hydrophilic material.
  • the polishing layer preferably has: i. a density greater than 0.5g/cm ; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of .02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30°C to tensile modulus at 60° C of 1.0 to 2.5; v. a hardness of 15 to 80 Shore D; vi. a yield stress of 300-6000 psi (2.1-41.4 MegaPascal); vii.
  • the polishing layer further comprises a plurality of soft domains and hard domains.
  • Soft domains may possibly be a polymer.
  • Hard domains may possibly be ceramic particles. Particles which may be incorporated into the polishing layer include: alumina, silicon carbide, chromia, alumina- zirconia, silica, diamond, iron oxide, ceria, boron nitride, boron carbide, garnet, zirconia, magnesium oxide, titania, and combinations thereof.
  • Pads of the present invention may be manufactured to be placed on a rigid platen such as the circular platen of a typical semiconductor planarization apparatus. They may also be manufactured for use in linear- type planarization apparatus in the form of a rolled web which can be indexed over a plate which provides rigid planarity for the pad during polishing. Another possible form for the pad is that of a continuous belt.
  • the present invention is directed to an improved polishing pad useful in the polishing or planarizing of substrates, particularly substrates for the manufacture of semiconductor devices, memory disks or the like.
  • the compositions and methods of the present invention may also be useful in other industries and can be applied to any one of a number of materials, including but not limited to silicon, silicon dioxide, metal (including, but not limited to tungsten, copper, and aluminum), dielectrics (including polymeric dielectrics), ceramics and glass.
  • the pads of the present invention comprise a polishing layer having an outer surface.
  • Preferred processes for the manufacture of a polishing layer in accordance with the present invention include: 1. casting, 2. coalescing, 3. spraying, 4.molding, 5. printing (including ink-jet printing), or 6. any similar-type process in which a flowable material is positioned and solidified, thereby creating at least a portion of a pad's topography.
  • the polishing layer surface is far less disturbed or damaged (relative to machining); therefore the pads of the present invention will exhibit fewer macro-defects, and pad polishing performance and predictability of pad performance, are generally improved.
  • Pads are generally conditioned prior to use.
  • the conditioning creates or augments the texture of the pad.
  • the texture can experience unwanted plastic flow and can be fouled by debris.
  • pads are generally re-conditioned periodically during their useful life to regenerate an optimal micro-topography.
  • the polishing pads of the present invention require less re-conditioning during use, relative to conventional polishing pads.
  • the pad's macro-structure is incorporated into the surface of the polishing layer as an integral part of the manufacturing process.
  • One possible way of doing this is to have present mold protrusions around which pad material initially flows and solidifies.
  • the macro-topography can be simultaneously created along the polishing layer's outer surface as the pad material solidifies.
  • the macro-topography preferably comprises one or more indentations having an average depth and/or width of greater than 0.1, more preferably 0.4 and yet more preferably 0.6 millimeters. This macro-topography facilitates the flow of polishing fluid and thereby enhances polishing performance.
  • the pad material is sufficiently hydrophilic to provide a critical surface tension greater than or equal to 34 milliNewtons per meter, more preferably greater than or equal to 37 and most preferably greater than or equal to 40 milliNewtons per meter.
  • Critical surface tension defines the wettability of a solid surface by noting the lowest surface tension a liquid can have and still exhibit a contact angle greater than zero degrees on that solid. Thus, polymers with higher critical surface tensions are more readily wet and are therefore more hydrophilic.
  • Critical Surface Tension of common polymers are provided below:
  • the pad matrix is derived from at least:
  • Preferred pad materials comprise urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester or acrylamide moieties.
  • the pad material can be porous or non-porous.
  • the matrix is non-porous; in another embodiment, the matrix is non-porous and free of fiber reinforcement.
  • the polishing layer material comprises: 1. a plurality of rigid domains which resists plastic flow during polishing; and 2. a plurality of less rigid domains which are less resistant to plastic flow during polishing.
  • the rigid phase size in any dimension is preferably less than 100 microns, more preferably less than 50 microns, yet more preferably less than 25 microns and most preferably less than 10 microns.
  • the non-rigid phase is also preferably less than 100 microns, more preferably less than 50 microns, more preferably less than 25 microns and most preferably less than 10 microns.
  • Preferred dual phase materials include polyurethane polymers having a soft segment (which provides the non-rigid phase) and a hard segment (which provides the rigid phase). The domains are produced during the forming of the polishing layer by a phase separation, due to incompatibility between the two (hard and soft) polymer segments.
  • Hard and soft domains within the pad material can also be created: 1. by hard and soft segments along a polymer backbone; 2. by crystalline regions and non-crystalline regions within the pad material; 3. by alloying a hard polymer with a soft polymer; or 4. by combining a polymer with an organic or inorganic filler.
  • Useful such compositions include copolymers, polymer blends interpenetrating polymer networks and the like.
  • polishing layer 09/049,864 which is made a part of this specification by reference, describes hard domains as possibly being ceramic particles, particularly an oxide, most particularly a metal oxide.
  • Particles which may be incorporated into the polishing layer include: alumina, silicon carbide, chromia, alumina-zirconia, silica, diamond, iron oxide, ceria, boron nitride, boron carbide, garnet, zirconia, magnesium oxide, titania, and combinations thereof.
  • the preferred methods of creating the macro-channels or macro- indentations are embossing or printing.
  • the macro-indentations are useful in providing large flow channels for the polishing fluid, during the polishing operation.
  • the outer surface can be further modified by adding a micro-topography.
  • the micro-topography is preferably created by moving the polishing layer surface against the surface of an abrasive material.
  • the abrasive material is a rotating structure (the abrasive material can be round, square, rectangular, oblong or of any geometric configuration) having a plurality of rigid particles embedded (and preferably, permanently affixed) upon the surface. The movement of the rigid particles against the pad surface causes the pad surface to undergo plastic flow, fragmentation or a combination thereof (at the point of contact with the particles).
  • the abrasive surface need not rotate against the pad surface; the abrasive surface can move against the pad in any one of a number of ways, including vibration, linear movement, random orbitals, rolling or the like.
  • the resulting plastic flow, fragmentation or combination thereof creates a micro-topography upon the pad's outer surface.
  • the micro-topography can comprise a micro-indentation with a micro-protrusion adjacent to at least one side.
  • the micro- protrusions provide at least 0.1 percent of the surface area of the pad's polishing surface, and the micro-indentations have an average depth of less than 50 microns, more preferably less than 10 microns, and the micro- protrusions have an average height of less than 50 microns and more preferably less than 10 microns.
  • such surface modification with an abrasive surface will cause minimal abrasion removal of the polishing layer, but rather merely plows furrows into the pad without causing a substantial amount, if any, of pad material to separate from the polishing layer.
  • abrasion removal of pad material is acceptable, so long as a micro-topography is produced.
  • micro- indentations or micro-protrusions may also be created during the manufacturing process by incorporation of appropriate features into the pad surface. Formation of micro-topography and macro-topography during the fabrication of the pad can diminish or even negate the necessity of preconditioning break-in. Such formation also provides more controlled and faithful replication of the micro-topography as compared to surface modification subsequent to pad creation.
  • Application Serial No. 09/129,301 which is made a part of the present specification by reference, describes the manufacture of pads by extrusion wherein the resulting pad sheet material may be formed into a polishing belt by creating a seam from the two ends of the sheet, or in an alternative, the sheet may be cut to form pads of any shape or size.
  • the pads of the present invention are preferably used in combination with a polishing fluid, such as a polishing slurry.
  • a polishing fluid such as a polishing slurry.
  • the polishing fluid is placed between the pad's polishing surface and the substrate to be polished.
  • the micro-indentations allow for improved polishing fluid flow along the interface (between the pad and the substrate to be polished).
  • the improved flow of polishing fluid generally allows for more efficient and effective polishing performance.
  • the macro-topography is less prone to macro-defects, such as burrs or protrusions. This has been found to improve polishing pad performance by providing a polishing surface having very low levels of macro-defects and by substantially diminishing debris trapped in the macro-indentations that would otherwise inhibit the flow of polishing fluid.
  • the pads of the present invention are preferably attached to a platen or slid over a rigid plate and then brought sufficiently proximate with a workpiece to be polished or planarized. Surface irregularities are removed at a rate which is dependent upon a number of parameters, including: pad pressure on the workpiece surface (or vice versa); the speed at which the pad and workpiece move in relation to one another; and the components of the polishing fluid.
  • the micro-topography can experience abrasion removal or plastic flow (the micro-protrusions are flattened or are otherwise less pronounced), which can diminish polishing performance.
  • the micro- protrusions are then preferably re-formed with further conditioning, such as by moving the pad against an abrasive surface again and causing the material to once again form furrows.
  • Such reconditioning is generally not as rigorous and/or not required as often for pads of the present invention, relative to may common prior art pads.
  • the preferred abrasive surface for conditioning is a disk which is preferably metal and which is preferably embedded with diamonds of a size in the range of 1 micron to 0.5 millimeters.
  • the pressure between the conditioning disk and the polishing pad is preferably between 0.1 to about 25 pounds per square inch.
  • the disk's speed of rotation is preferably in the range of 1 to 1000 revolutions per minute.
  • a preferred conditioning disk is a four inch diameter, 100 grit diamond disk, such as the RESITM Disk manufactured by R. E. Science, Inc. Optimum conditioning was attained when the downforce was 10 lbs per square inch, platen speed was 75 rpm, the sweep profile was bell-shaped, the number of preconditioning break-in sweeps was 15 and the number of replenishing conditioning sweeps between wafers was 15.
  • conditioning can be conducted in the presence of a conditioning fluid, preferably a water based fluid containing abrasive particles.
  • the polishing fluid is preferably water based and may or may not require the presence of abrasive particles, depending upon the composition of the polishing layer.
  • a polishing layer comprising abrasive particles may not require abrasive particles in the polishing fluid.
  • This example demonstrates the ability to achieve good polishing performance with a thin pad used with a conventional slurry without the need for conditioning.
  • W242 aqueous based latex urethane
  • the pad was used to polish TEOS oxide films deposited on silicon wafers. Polishing was performed on a Strasbaugh 6DS-SP using a down-force of 9 psi, platen speed of 20 rpm and a carrier speed of 15 rpm. The slurry was ILD1300 from Rodel, used at a flow rate of 125 mil/min. No pad conditioning was done either during polishing or between wafers. A stable removal rate of 600 A/min with a non-uniformity of 10% was achieved.
  • This example demonstrates the ability to incorporate the abrasive into the pad and polish with a non-abrasive containing reactive liquid.
  • the SCP's comprised 95 wt % of ceria.
  • Multiple coats were applied, with drying between each coat, to build up a layer of the required thickness (15 mils).
  • Pressure sensitive adhesive was applied to the back of the sheet and a circular, 28 inch diameter pad was then die-cut from the sheet.
  • the pad was used to polish TEOS oxide films deposited on silicon wafers. Polishing was performed on a Strasbaugh 6DS-SP using a down-force of 6 psi, platen speed of 65 rpm and a carrier speed of 50 rpm. The liquid used during polishing was pH 10.5 ammonium hydroxide solution at a flow rate of 100 mil/min. The pad was preconditioned prior to polishing to remove high spots and concurrently conditioned during polishing using a 100 grit conditioning disk. A stable removal rate of 1500 A/min was achieved.

Abstract

This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and are sufficiently thin to generally improve predictability and polishing performance.

Description

IMPROVED POLISHING PADS AND METHODS RELATING THERETO
This application claims the priority of Provisional Application No. 60/116,547 filed January 21 , 1999.
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates generally to polishing pads useful in the manufacture of semiconductor devices, memory disks or the like. More particularly, the polishing pads of the present invention comprise a base substrate which supports a thin hydrophilic polishing layer, the polishing layer having an particular surface texture and topography.
Discussion of the Related Art
High precision chemical-mechanical polishing is often required in the manufacture of integrated circuits and memory disks. Such polishing is generally accomplished, using a polishing pad in combination with a polishing fluid. However, unwanted "pad to pad" variation in polishing performance is quite common, and therefore a need exists for polishing pads which exhibit more predicable performance.
U.S. Patent No. 4,927,432 describes a polishing pad comprising a porous thermoplastic resin which is reinforced with a fibrous network such as a felted mat; the polishing material is modified by coalescing the resin among the fibers, preferably by heat treatment, to increase the porosity and hardness of the material as well as increasing the surface activity of the resin. SUMMARY OF INVENTION
The present invention is directed to polishing pads having: 1. a base substrate; and 2. a thin hydrophilic polishing layer. The polishing layer has a particular surface texture and topography. "Texture" is intended to mean surface characteristics on a scale of less than 10 microns, and "surface topography" is intended to mean surface characteristics of 10 microns or more.
The base substrates of the present invention can comprise a single layer or multiple layers and can comprise a combination of layers that are bonded together. What is critical is that at least a portion of the base layer defines a planarity even when a non-uniform pressure of 10 pounds per square inch is applied against the base layer. In one embodiment, a base layer is bonded to a polishing layer and the combination is slid over a rigid component such as a platen or plate during polishing. A preferred base layer comprises a resilient layer of plastic, particularly an engineering plastic, such as a polyamide, polyimide, and/or polyester, particularly poly(ethylene terephthalate) or "PET". The layer is preferably a flexible web capable of being pulled from a roll or easily wound into a roll.
The base substrate of the present invention preferably has a thickness of less than 1 millimeter. In a preferred embodiment, the support layer has a thickness of less than 0.5 millimeters, more preferably less than 300 microns.
In a preferred embodiment, the thin polishing layers of the present invention are less than 500 microns, more preferably less than 300 microns and yet more preferably less than 150 microns and comprise a random surface texture comprising pores and/or micro- voids of varying sizes and dimensions. A preferred method of forming the thin polishing layer is by coagulation of a polymer onto the support (base) layer, such as in accordance with the "Process For Producing Microporous Films and Coatings" described in U.S. Patent No. 3,100,721 which is hereby incorporated into this specification by reference. In an alternative embodiment, the thin polishing layer is, printed, sprayed, cast, molded, ink-jet printed or otherwise coated onto the support layer and thereafter solidified by cooling or by a curing reaction.
It has been surprisingly discovered that the combination of a thin base layer and a thin polishing layer can provide ultra high performance polishing, due to a more precise and predictable polishing interaction when a rigid support presses the thin polishing pad against (and the pad is moved in relation to) a substrate to be polished. This polishing pad can be manufactured to very tight tolerances and (together with the rigid support) can provide predictable compressibility and planarization length. "Planarization length" is intended to mean the span across the surface of a polishing pad which lies substantially in a single plane and remains in a single plane during polishing, such that as high features on a wafer surface are polished, features of lesser height do not polish unless or until the higher features are diminished to the height of the shorter features.
It has been surprisingly discovered that polishing pads having a thickness greater than 1.5 millimeters have a much higher propensity for unpredictable warping or otherwise deviations from their original shape. Such warping and/or deviations are generally more detrimental to ultra precision polishing performance than pads having a thin base substrate in accordance with the present invention. It has also been surprisingly discovered that thin polishing layers in accordance with the present invention are less susceptible to unpredictable polishing performance due to material fatigue during the polishing operation. For the polishing layers of the present invention, fatigue effects are much more predictable and generally have a diminished affect on polishing performance. Furthermore, thin polishing layers will tend to fully saturate and reach a steady state equilibrium with a polishing slurry much more quickly and predictably than conventional polishing pads.
In a preferred embodiment, the polishing layer is substantially free of macro-defects. "Macro-defects" are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of greater than 25 microns.
Macro-defects should not be confused with "micro-asperities." Micro- asperities are intended to mean burrs or other protrusions from the polishing surface of the pad which have a dimension (either width, height or length) of less than 10 microns. It has been surprisingly discovered that micro- asperities are generally advantageous in ultra precision polishing, particularly in the manufacture of semi-conductor devices, and in a preferred embodiment, the polishing layer provides a large number of micro-asperities at the polishing interface.
Furthermore, the polishing layers of the present invention comprise a hydrophilic material. The polishing layer preferably has: i. a density greater than 0.5g/cm ; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter; iii. a tensile modulus of .02 to 5 GigaPascals; iv. a ratio of tensile modulus at 30°C to tensile modulus at 60° C of 1.0 to 2.5; v. a hardness of 15 to 80 Shore D; vi. a yield stress of 300-6000 psi (2.1-41.4 MegaPascal); vii. a tensile strength of 1000 to 15,000 psi (7-105 MegaPascal); and viii. an elongation to break up to 500%. In a preferred embodiment, the polishing layer further comprises a plurality of soft domains and hard domains. Soft domains may possibly be a polymer. Hard domains may possibly be ceramic particles. Particles which may be incorporated into the polishing layer include: alumina, silicon carbide, chromia, alumina- zirconia, silica, diamond, iron oxide, ceria, boron nitride, boron carbide, garnet, zirconia, magnesium oxide, titania, and combinations thereof.
Pads of the present invention may be manufactured to be placed on a rigid platen such as the circular platen of a typical semiconductor planarization apparatus. They may also be manufactured for use in linear- type planarization apparatus in the form of a rolled web which can be indexed over a plate which provides rigid planarity for the pad during polishing. Another possible form for the pad is that of a continuous belt.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention is directed to an improved polishing pad useful in the polishing or planarizing of substrates, particularly substrates for the manufacture of semiconductor devices, memory disks or the like. The compositions and methods of the present invention may also be useful in other industries and can be applied to any one of a number of materials, including but not limited to silicon, silicon dioxide, metal (including, but not limited to tungsten, copper, and aluminum), dielectrics (including polymeric dielectrics), ceramics and glass. The pads of the present invention comprise a polishing layer having an outer surface. Preferred processes for the manufacture of a polishing layer in accordance with the present invention include: 1. casting, 2. coalescing, 3. spraying, 4.molding, 5. printing (including ink-jet printing), or 6. any similar-type process in which a flowable material is positioned and solidified, thereby creating at least a portion of a pad's topography.
By flowing and solidifying at least a portion of the topography into (or onto) the pad polishing layer (without cutting) in accordance with the present invention, the polishing layer surface is far less disturbed or damaged (relative to machining); therefore the pads of the present invention will exhibit fewer macro-defects, and pad polishing performance and predictability of pad performance, are generally improved.
Pads are generally conditioned prior to use. The conditioning creates or augments the texture of the pad. During use, the texture can experience unwanted plastic flow and can be fouled by debris. As a result, pads are generally re-conditioned periodically during their useful life to regenerate an optimal micro-topography. In some embodiments, the polishing pads of the present invention require less re-conditioning during use, relative to conventional polishing pads.
In a preferred embodiment, the pad's macro-structure is incorporated into the surface of the polishing layer as an integral part of the manufacturing process. One possible way of doing this is to have present mold protrusions around which pad material initially flows and solidifies. In this way, the macro-topography can be simultaneously created along the polishing layer's outer surface as the pad material solidifies. The macro-topography preferably comprises one or more indentations having an average depth and/or width of greater than 0.1, more preferably 0.4 and yet more preferably 0.6 millimeters. This macro-topography facilitates the flow of polishing fluid and thereby enhances polishing performance.
In a preferred embodiment, the pad material is sufficiently hydrophilic to provide a critical surface tension greater than or equal to 34 milliNewtons per meter, more preferably greater than or equal to 37 and most preferably greater than or equal to 40 milliNewtons per meter. Critical surface tension defines the wettability of a solid surface by noting the lowest surface tension a liquid can have and still exhibit a contact angle greater than zero degrees on that solid. Thus, polymers with higher critical surface tensions are more readily wet and are therefore more hydrophilic. Critical Surface Tension of common polymers are provided below:
Polymer Critical Surface Tension (mN/m)
Polytetrafluoroethylene 19
Polydimethylsiloxane 24
Silicone Rubber 24
Polybutadiene 31
Polyethylene 31
Polystyrene 33
Polypropylene 34
Polyester 39-42
Polyacrylamide 35-40 Polyvinyl alcohol 37
Polymethyl methacrylate 39
Polyvinyl chloride 39 Polysulfone 41
Nylon 6 42
Polyurethane 45
Polycarbonate 45
In one embodiment, the pad matrix is derived from at least:
I . an acrylated urethane; 2. an acrylated epoxy;
3. an ethylenically unsaturated organic compound having a carboxyl, benzyl, or amide functionality;
4. an aminoplast derivative having a pendant unsaturated carbonyl group; 5. an isocyanurate derivative having at least one pendant acrylate group;
6. a vinyl ether;
7. a urethane;
8. a polyacrylamide; 9. an ethylene/ester copolymer or an acid derivative thereof;
10. a polyvinyl alcohol;
I I. a polymethyl methacrylate;
12. a polysulfone;
13. an polyamide; 14. a polycarbonate;
15. a polyvinyl chloride;
16. an epoxy;
17. a copolymer of the above; or
18. a combination thereof. Preferred pad materials comprise urethane, carbonate, amide, sulfone, vinyl chloride, acrylate, methacrylate, vinyl alcohol, ester or acrylamide moieties. The pad material can be porous or non-porous. In one embodiment, the matrix is non-porous; in another embodiment, the matrix is non-porous and free of fiber reinforcement.
In a preferred embodiment, the polishing layer material comprises: 1. a plurality of rigid domains which resists plastic flow during polishing; and 2. a plurality of less rigid domains which are less resistant to plastic flow during polishing. This combination of properties provides a dual mechanism which has been found to be particularly advantageous in the polishing of silicon dioxide and metal. The hard domains tend to cause the protrusion to rigorously engage the polishing interface, whereas the soft domains tend to enhance polishing interaction between the protrusion and the substrate surface being polished.
The rigid phase size in any dimension (height, width or length) is preferably less than 100 microns, more preferably less than 50 microns, yet more preferably less than 25 microns and most preferably less than 10 microns. Similarly the non-rigid phase is also preferably less than 100 microns, more preferably less than 50 microns, more preferably less than 25 microns and most preferably less than 10 microns. Preferred dual phase materials include polyurethane polymers having a soft segment (which provides the non-rigid phase) and a hard segment (which provides the rigid phase). The domains are produced during the forming of the polishing layer by a phase separation, due to incompatibility between the two (hard and soft) polymer segments. Other polymers having hard and soft segments could also be appropriate, including ethylene copolymers, copolyester, block copolymers, polysulfones copolymers and acrylic copolymers. Hard and soft domains within the pad material can also be created: 1. by hard and soft segments along a polymer backbone; 2. by crystalline regions and non-crystalline regions within the pad material; 3. by alloying a hard polymer with a soft polymer; or 4. by combining a polymer with an organic or inorganic filler. Useful such compositions include copolymers, polymer blends interpenetrating polymer networks and the like. Application No. 09/049,864, which is made a part of this specification by reference, describes hard domains as possibly being ceramic particles, particularly an oxide, most particularly a metal oxide. Particles which may be incorporated into the polishing layer include: alumina, silicon carbide, chromia, alumina-zirconia, silica, diamond, iron oxide, ceria, boron nitride, boron carbide, garnet, zirconia, magnesium oxide, titania, and combinations thereof.
The preferred methods of creating the macro-channels or macro- indentations are embossing or printing. The macro-indentations are useful in providing large flow channels for the polishing fluid, during the polishing operation.
After forming the pad's polishing layer, including at least a part of the macro-topography, the outer surface can be further modified by adding a micro-topography. The micro-topography is preferably created by moving the polishing layer surface against the surface of an abrasive material. In one embodiment, the abrasive material is a rotating structure (the abrasive material can be round, square, rectangular, oblong or of any geometric configuration) having a plurality of rigid particles embedded (and preferably, permanently affixed) upon the surface. The movement of the rigid particles against the pad surface causes the pad surface to undergo plastic flow, fragmentation or a combination thereof (at the point of contact with the particles). The abrasive surface need not rotate against the pad surface; the abrasive surface can move against the pad in any one of a number of ways, including vibration, linear movement, random orbitals, rolling or the like.
The resulting plastic flow, fragmentation or combination thereof (due to the abrasive surface), creates a micro-topography upon the pad's outer surface. The micro-topography can comprise a micro-indentation with a micro-protrusion adjacent to at least one side. In one embodiment, the micro- protrusions provide at least 0.1 percent of the surface area of the pad's polishing surface, and the micro-indentations have an average depth of less than 50 microns, more preferably less than 10 microns, and the micro- protrusions have an average height of less than 50 microns and more preferably less than 10 microns. Preferably, such surface modification with an abrasive surface will cause minimal abrasion removal of the polishing layer, but rather merely plows furrows into the pad without causing a substantial amount, if any, of pad material to separate from the polishing layer. However, although less preferred, abrasion removal of pad material is acceptable, so long as a micro-topography is produced.
In an alternative embodiment, at least a portion of the micro- indentations or micro-protrusions may also be created during the manufacturing process by incorporation of appropriate features into the pad surface. Formation of micro-topography and macro-topography during the fabrication of the pad can diminish or even negate the necessity of preconditioning break-in. Such formation also provides more controlled and faithful replication of the micro-topography as compared to surface modification subsequent to pad creation. Application Serial No. 09/129,301, which is made a part of the present specification by reference, describes the manufacture of pads by extrusion wherein the resulting pad sheet material may be formed into a polishing belt by creating a seam from the two ends of the sheet, or in an alternative, the sheet may be cut to form pads of any shape or size.
The pads of the present invention are preferably used in combination with a polishing fluid, such as a polishing slurry. During polishing, the polishing fluid is placed between the pad's polishing surface and the substrate to be polished. As the pad is moved relative to the substrate being polished, the micro-indentations allow for improved polishing fluid flow along the interface (between the pad and the substrate to be polished). The improved flow of polishing fluid generally allows for more efficient and effective polishing performance.
Since at least some of the macro-topography is not created by an external means (such as by machining), the macro-topography is less prone to macro-defects, such as burrs or protrusions. This has been found to improve polishing pad performance by providing a polishing surface having very low levels of macro-defects and by substantially diminishing debris trapped in the macro-indentations that would otherwise inhibit the flow of polishing fluid.
In use, the pads of the present invention are preferably attached to a platen or slid over a rigid plate and then brought sufficiently proximate with a workpiece to be polished or planarized. Surface irregularities are removed at a rate which is dependent upon a number of parameters, including: pad pressure on the workpiece surface (or vice versa); the speed at which the pad and workpiece move in relation to one another; and the components of the polishing fluid.
As the pad polishes, the micro-topography can experience abrasion removal or plastic flow (the micro-protrusions are flattened or are otherwise less pronounced), which can diminish polishing performance. The micro- protrusions are then preferably re-formed with further conditioning, such as by moving the pad against an abrasive surface again and causing the material to once again form furrows. Such reconditioning is generally not as rigorous and/or not required as often for pads of the present invention, relative to may common prior art pads.
The preferred abrasive surface for conditioning is a disk which is preferably metal and which is preferably embedded with diamonds of a size in the range of 1 micron to 0.5 millimeters. During conditioning, the pressure between the conditioning disk and the polishing pad is preferably between 0.1 to about 25 pounds per square inch. The disk's speed of rotation is preferably in the range of 1 to 1000 revolutions per minute.
A preferred conditioning disk is a four inch diameter, 100 grit diamond disk, such as the RESI™ Disk manufactured by R. E. Science, Inc. Optimum conditioning was attained when the downforce was 10 lbs per square inch, platen speed was 75 rpm, the sweep profile was bell-shaped, the number of preconditioning break-in sweeps was 15 and the number of replenishing conditioning sweeps between wafers was 15.
Optionally, conditioning can be conducted in the presence of a conditioning fluid, preferably a water based fluid containing abrasive particles. The polishing fluid is preferably water based and may or may not require the presence of abrasive particles, depending upon the composition of the polishing layer. For example, a polishing layer comprising abrasive particles may not require abrasive particles in the polishing fluid.
EXAMPLES
Example 1:
This example demonstrates the ability to achieve good polishing performance with a thin pad used with a conventional slurry without the need for conditioning.
A sheet of 7 mil polyester film, precoated with an adhesion promoting coating, was spray coated with an aqueous based latex urethane (W242 from Witco) containing 2 wt. % (40 vol. %) of polymeric microballons (Expancel). Multiple coats were applied, with drying between each coat, to build up a layer of the required thickness (3 mils). After drying, the sheet surface was lightly sanded to remove high spots and to provide a suitable texture for polishing. Pressure sensitive adhesive was applied to the back of the sheet and a circular, 28 inch diameter pad was then die-cut from the sheet.
The pad was used to polish TEOS oxide films deposited on silicon wafers. Polishing was performed on a Strasbaugh 6DS-SP using a down-force of 9 psi, platen speed of 20 rpm and a carrier speed of 15 rpm. The slurry was ILD1300 from Rodel, used at a flow rate of 125 mil/min. No pad conditioning was done either during polishing or between wafers. A stable removal rate of 600 A/min with a non-uniformity of 10% was achieved.
Example 2:
This example demonstrates the ability to incorporate the abrasive into the pad and polish with a non-abrasive containing reactive liquid.
A sheet of 7 mil polyester film, precoated with an adhesion promoting coating, was spray coated with an aqueous based latex urethane (W242 from Witco) containing 70 wt. % of slurry containing particles (SCP's). The SCP's comprised 95 wt % of ceria. Multiple coats were applied, with drying between each coat, to build up a layer of the required thickness (15 mils). Pressure sensitive adhesive was applied to the back of the sheet and a circular, 28 inch diameter pad was then die-cut from the sheet.
The pad was used to polish TEOS oxide films deposited on silicon wafers. Polishing was performed on a Strasbaugh 6DS-SP using a down-force of 6 psi, platen speed of 65 rpm and a carrier speed of 50 rpm. The liquid used during polishing was pH 10.5 ammonium hydroxide solution at a flow rate of 100 mil/min. The pad was preconditioned prior to polishing to remove high spots and concurrently conditioned during polishing using a 100 grit conditioning disk. A stable removal rate of 1500 A/min was achieved.
Nothing from the above discussion is intended to be a limitation of any kind with respect to the present invention. All limitations to the present invention are intended to be found only in the claims, as provided below.

Claims

WHAT IS CLAIMED IS:
1. A method of polishing a substrate useful in the manufacture of a semiconductor device or a precursor thereto, comprising:
placing a fluid between the substrate and a thin pad, the thin pad having a polishing layer, the polishing layer further comprising a polishing surface;
moving the polishing surface and the substrate surface relative to and biased toward one another as the fluid or additional fluid is maintained between the surfaces, the fluid preventing at least 50% of the surfaces, on average, from touching one another;
biasing the surfaces together by applying a uniform force of less than
25 pounds per square inch and compressing the polishing surface by less than 5 microns, thereby causing the polishing surface to exhibit a planar configuration which is parallel to a major portion of the substrate surface, said polishing surface comprising a plurality of nanoasperities;
said polishing layer having a thickness of less than or equal to one millimeter, the polishing layer being bonded to a support film, the support film having a thickness of less than or equal to 1 millimeter, the polishing pad having an average total thickness of less than or equal to three millimeters, said polishing layer having a polishing surface consisting essentially of a polishing material having:
i. a density greater than 0.5 g/cm3 ; ii. a critical surface tension greater than or equal to 34 milliNewtons per meter;
iii. a tensile modulus of .02 to 5 GigaPascals;
iv. a ratio of tensile modulus at 30°C to tensile modulus at 60° C of 1.0 to 2.5;
v. a hardness of 15 to 80 Shore D;
vi. a yield stress of 300-6000 psi;
vii. a tensile strength of 1000 to 15,000 psi; and
viii. an elongation to break less than or equal to 500%,
said polishing material comprising at least one moiety from the group consisting of: 1. a urethane; 2. a carbonate; 3. an amide; 4. an ester; 5. an ether; 6. an acrylate; 7. a methacrylate; 8. an acrylic acid; 9. a methacrylic acid; 10. a sulphone; 11. an acrylamide; 12. a halide; 13. an imide; 14. a carboxyl; 15. a carbonyl; 16. an amino; 17. an aldehydric and 18. a hydroxyl.
2. A polishing pad in accordance with Claim 1 wherein macro- topography is incorporated into the polishing surface due to: i. embossing; ii. molding; iii. printing; iv. casting; v. sintering; vi. photo-imaging; vii. chemical etching; or viii. ink-jet printing.
3. A polishing pad in accordance with Claim 2, whereby said polishing surface is formed by ink-jet printing.
4. A pad in accordance with Claim 1, wherein said polishing surface has, on average, less than 2 observable macro-defects per square millimeter of polishing surface when viewed at a magnification of 1000X.
5. A pad in accordance with Claim 1, wherein the polishing material further comprises a plurality of soft domains and a plurality of hard domains, the hard domains and soft domains having an average size of less than 100 microns.
6. A pad in accordance with Claim 5, wherein the hard domains and the soft domains are produced by a phase separation as the polishing layer is formed, the polishing layer comprising a polymer having a plurality of hard segments and a plurality of soft segments.
7. A pad in accordance with Claim 3, wherein the polishing layer consists essentially of a two phase polyurethane.
8. A pad in accordance with Claim 1, wherein the polishing layer is formed as a sheet by an extrusion process.
9. A pad in accordance with Claim 8, wherein said sheet has a beginning edge and ending edge, the edges being joined to form a continuous belt.
10. A pad in accordance with Claim 8, wherein said sheet is cut to form pads of any size or shape.
11. A pad in accordance with Claim 1 further comprising an insert around which a flowable material is solidified.
12. A pad in accordance with Claim 1, wherein the pad has an average aspect ratio of at least 400.
13. A pad in accordance with Claim 1, wherein the polishing layer further comprises abrasive particles.
14. A method of planarizing a silicon, silicon dioxide or metal substrate, comprising:
a) providing a polishing pad having a polishing layer, said polishing layer consisting essentially of a hydrophilic polishing layer, said polishing layer having a thickness of less than or equal to one millimeter and having a polishing surface consisting essentially of a polishing material having:
i. a density greater than 0.5 g/cm3 ;
ii. a critical surface tension greater than or equal to 34 milliNewtons per meter;
iii. a tensile modulus of .02 to 5 GigaPascals;
iv. a ratio of tensile modulus at 30°C to tensile modulus at 60° C of 1.0 to 2.5;
v. a hardness of 15 to 80 Shore D; vi. a yield stress of 300-6000 psi;
vii. a tensile strength of 1000 to 15,000 psi; and
viii. an elongation to break less than or equal to 500%o,
said polishing material comprising at least one moiety from the group consisting of: a urethane produced by a catalyst which accelerates an isocyanate reaction, said catalyst being devoid of copper, tungsten, iron or chromium; a carbonate; an amide; an ester; an ether; an acrylate; a methacrylate; an acrylic acid; a methacrylic acid; a sulphone; an acrylamide; a halide; and a hydroxide,
said polishing surface having a macro-topography produced by solidifying a flowable material, and
b) chemical mechanical polishing a metal, silicon or silicon dioxide substrate with said pad.
15. A method in accordance with Claim 14, wherein said macro- topography is incorporated into the polishing surface due to: i. embossing; ii. molding; iii. printing; iv. casting; v. sintering; vi. photo-imaging; vii. chemical etching; or viii. ink-jet printing.
16. A method in accordance with Claim 14, wherein the polishing surface is conditioned to create a plurality of micro-asperities by moving an abrasive medium against the polishing surface, said abrasive medium carrying a plurality of rigid particles.
17. A pad in accordance with Claim 1, wherein the polishing layer consists essentially of a material selected from the group consisting of: polymethyl methacrylate, polyvinyl chloride, polysulfone, nylon, polycarbonate, polyurethane, ethylene copolymer, polyether sulfone polyether imide, polyethylene imine, polyketone and combinations thereof.
18. A method of polishing a substrate of a semi-conductor device, comprising:
creating a plurality of micro-asperities upon a hydrophilic polishing surface having a random surface texture, said polishing surface having no intrinsic ability to absorb or transport a plurality of slurry particles, said micro-asperities being created by moving an abrasive medium against and relative to the polishing surface, and
polishing a silicon, silicon dioxide, glass or metal substrate with said polishing layer having the micro-defects, using a pressure between the substrate and the polishing layer of greater than 0.1 kilograms per square meter.
19. A method in accordance with Claim 18, further comprising: periodically renewing the micro-asperities during polishing of the substrate by again moving an abrasive medium against and relative to the polishing surface.
20. A method in accordance with Claim 19, wherein said abrasive medium more rigorously engages the pad initially to thereby create micro- asperities, than thereafter, when the micro-asperities are renewed.
21. A polishing pad for use in chemical mechanical polishing, comprising:
a polishing layer consisting essentially of a hydrophilic polishing layer having no intrinsic ability to absorb a plurality of slurry particles, said polishing layer having a continuous or discontinuous polishing surface consisting essentially of a polishing material having:
i. a density greater than 0.5 g/cm3 ;
ii. a critical surface tension greater than or equal to 34 milliNewtons per meter;
iii. a tensile modulus of .02 to 5 GigaPascals;
iv. a ratio of tensile modulus at 30°C to tensile modulus at 60° C of 1.0 to 2.5;
v. a hardness of 15 to 80 Shore D;
vi. a yield stress of 300-6000 psi;
vii. a tensile strength of 1000 to 15,000 psi; and
viii. an elongation to break less than or equal to 500%,
said polishing layer comprising a surface topography having at least one groove and a polishing surface adjacent to said groove, said groove defining a width of at least 0.01 millimeters, a depth of at least 0.01 millimeters and a length of at least 0.1 millimeters, said surface topography having a transition region, said transition region being a portion of the surface topography which transitions from the polishing surface to a boundary surface of said groove, said boundary surface of said groove lying on a first plane which is different from a second plane upon which the polishing surface lies, said transition region being defined by a portion of the polishing surface which bridges between the first and second plane, the transition region of the entire polishing surface having less than 10 macro-defects of greater than 25 microns per millimeter of groove length.
PCT/US2000/001495 1999-01-21 2000-01-21 Improved polishing pads and methods relating thereto WO2000043159A1 (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002370157A (en) * 2001-06-15 2002-12-24 Toray Ind Inc Polishing pad
US6568997B2 (en) 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
US7963827B2 (en) 2006-07-14 2011-06-21 Saint-Gobain Abrastives, Inc. Backingless abrasive article
US8094456B2 (en) 2006-01-10 2012-01-10 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8148441B2 (en) 2005-03-08 2012-04-03 Toyo Tire & Rubber Co., Ltd. Polishing pad and manufacturing method thereof
US8865785B2 (en) 2007-03-28 2014-10-21 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8993648B2 (en) 2006-08-28 2015-03-31 Toyo Tire & Rubber Co., Ltd. Polishing pad
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Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1284842B1 (en) * 2000-05-27 2005-10-19 Rohm and Haas Electronic Materials CMP Holdings, Inc. Polishing pads for chemical mechanical planarization
US6592443B1 (en) * 2000-08-30 2003-07-15 Micron Technology, Inc. Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
SE0003550L (en) * 2000-10-03 2002-04-04 Pergo Ab Process for making surface elements
US6846225B2 (en) * 2000-11-29 2005-01-25 Psiloquest, Inc. Selective chemical-mechanical polishing properties of a cross-linked polymer and specific applications therefor
US6596388B1 (en) 2000-11-29 2003-07-22 Psiloquest Method of introducing organic and inorganic grafted compounds throughout a thermoplastic polishing pad using a supercritical fluid and applications therefor
US20050266226A1 (en) * 2000-11-29 2005-12-01 Psiloquest Chemical mechanical polishing pad and method for selective metal and barrier polishing
US6688956B1 (en) 2000-11-29 2004-02-10 Psiloquest Inc. Substrate polishing device and method
US6706383B1 (en) 2001-11-27 2004-03-16 Psiloquest, Inc. Polishing pad support that improves polishing performance and longevity
US7059946B1 (en) 2000-11-29 2006-06-13 Psiloquest Inc. Compacted polishing pads for improved chemical mechanical polishing longevity
US6684704B1 (en) * 2002-09-12 2004-02-03 Psiloquest, Inc. Measuring the surface properties of polishing pads using ultrasonic reflectance
US6579604B2 (en) 2000-11-29 2003-06-17 Psiloquest Inc. Method of altering and preserving the surface properties of a polishing pad and specific applications therefor
US6764574B1 (en) 2001-03-06 2004-07-20 Psiloquest Polishing pad composition and method of use
US6575823B1 (en) 2001-03-06 2003-06-10 Psiloquest Inc. Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof
EP1252973B1 (en) * 2001-04-25 2008-09-10 JSR Corporation Polishing pad for a semiconductor wafer which has light transmitting properties
US6818301B2 (en) * 2001-06-01 2004-11-16 Psiloquest Inc. Thermal management with filled polymeric polishing pads and applications therefor
JP2003100682A (en) * 2001-09-25 2003-04-04 Jsr Corp Polishing pad for semiconductor wafer
US20030207661A1 (en) * 2002-05-01 2003-11-06 Alexander Tregub Annealing of CMP polishing pads
US6811467B1 (en) 2002-09-09 2004-11-02 Seagate Technology Llc Methods and apparatus for polishing glass substrates
US6838169B2 (en) * 2002-09-11 2005-01-04 Psiloquest, Inc. Polishing pad resistant to delamination
JP2005539398A (en) * 2002-09-25 2005-12-22 ピーピージー インダストリーズ オハイオ， インコーポレイテッド Polishing pad for flattening
WO2004073926A1 (en) * 2003-02-18 2004-09-02 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US20040192178A1 (en) * 2003-03-28 2004-09-30 Barak Yardeni Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
US6884156B2 (en) * 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US6852982B1 (en) * 2003-07-14 2005-02-08 Fei Company Magnetic lens
WO2005028157A1 (en) * 2003-09-15 2005-03-31 Psiloquest Inc. A polishing pad for chemical mechanical polishing
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
CN1301184C (en) * 2003-12-16 2007-02-21 汪开庆 Optical grinding machine and method for processing sapphire crystal substrate for semiconductor use
KR100661445B1 (en) * 2004-02-05 2006-12-27 제이에스알 가부시끼가이샤 Chemical Mechanical Polishing Pad, Production Method Thereof, and Chemical Mechanical Polishing Process
US7059936B2 (en) * 2004-03-23 2006-06-13 Cabot Microelectronics Corporation Low surface energy CMP pad
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060099891A1 (en) * 2004-11-09 2006-05-11 Peter Renteln Method of chemical mechanical polishing, and a pad provided therefore
US20060046064A1 (en) * 2004-08-25 2006-03-02 Dwaine Halberg Method of improving removal rate of pads
JP4475404B2 (en) * 2004-10-14 2010-06-09 Ｊｓｒ株式会社 Polishing pad
US20060154579A1 (en) * 2005-01-12 2006-07-13 Psiloquest Thermoplastic chemical mechanical polishing pad and method of manufacture
JP5250934B2 (en) * 2005-01-31 2013-07-31 東レ株式会社 Improved polishing pad manufacturing method
KR20060099398A (en) * 2005-03-08 2006-09-19 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 Water-based polishing pads and methods of manufacture
KR100949560B1 (en) 2005-05-17 2010-03-25 도요 고무 고교 가부시키가이샤 Polishing pad
KR100709392B1 (en) * 2005-07-20 2007-04-20 에스케이씨 주식회사 Polishing Pad Containing Interpenetrating Liquified Vinyl Monomer Network With Polyurethane Matrix Therein
JP4884725B2 (en) 2005-08-30 2012-02-29 東洋ゴム工業株式会社 Polishing pad
JP4898172B2 (en) * 2005-09-08 2012-03-14 日本ミクロコーティング株式会社 Polishing pad, method for producing the same, and polishing method
TW200720017A (en) * 2005-09-19 2007-06-01 Rohm & Haas Elect Mat Water-based polishing pads having improved adhesion properties and methods of manufacture
CN100425405C (en) * 2006-08-03 2008-10-15 南京航空航天大学 Freezing nanometer abrasive polishing pad and its prepn. method
JP5008927B2 (en) 2006-08-31 2012-08-22 東洋ゴム工業株式会社 Polishing pad
US20080063856A1 (en) * 2006-09-11 2008-03-13 Duong Chau H Water-based polishing pads having improved contact area
KR100771892B1 (en) * 2007-02-06 2007-11-01 삼성전자주식회사 Fabrication method of semiconductor device having dishing-free planarized layer
CN101778718B (en) * 2007-08-13 2013-07-31 3M创新有限公司 Coated abrasive laminate disc and methods of making the same
US7635290B2 (en) * 2007-08-15 2009-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interpenetrating network for chemical mechanical polishing
US20090061743A1 (en) * 2007-08-29 2009-03-05 Stephen Jew Method of soft pad preparation to reduce removal rate ramp-up effect and to stabilize defect rate
MY148785A (en) * 2008-01-30 2013-05-31 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk
CN102083586B (en) * 2008-04-29 2015-08-12 塞米奎斯特股份有限公司 Polishing pad composition and method of manufacture and use thereof
JP5142866B2 (en) * 2008-07-16 2013-02-13 富士紡ホールディングス株式会社 Polishing pad
US8303375B2 (en) 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
DE102009030295B4 (en) * 2009-06-24 2014-05-08 Siltronic Ag Method for producing a semiconductor wafer
AU2010343085A1 (en) * 2009-12-29 2012-06-14 Saint-Gobain Abrasifs Method of cleaning a household surface
JP5623927B2 (en) * 2010-05-19 2014-11-12 東洋ゴム工業株式会社 Polishing pad
EP2785496B1 (en) * 2011-11-29 2021-11-24 CMC Materials, Inc. Polishing pad with foundation layer and polishing surface layer
KR101631974B1 (en) * 2011-12-16 2016-06-20 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 Polishing pad
US9649741B2 (en) 2014-07-07 2017-05-16 Jh Rhodes Company, Inc. Polishing material for polishing hard surfaces, media including the material, and methods of forming and using same
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
CN113579992A (en) 2014-10-17 2021-11-02 应用材料公司 CMP pad construction with composite material properties using additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10092998B2 (en) * 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
KR102567102B1 (en) * 2017-05-12 2023-08-14 주식회사 쿠라레 Polyurethane for polishing layer, polishing layer including polyurethane and modification method of the polishing layer, polishing pad, and polishing method
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. Abrasive delivery polishing pads and manufacturing methods thereof
JP7299970B2 (en) 2018-09-04 2023-06-28 アプライド マテリアルズ インコーポレイテッド Formulations for improved polishing pads
CN109794863A (en) * 2019-03-05 2019-05-24 北京国瑞升精机科技有限公司 A kind of hydrophily polished film and preparation method thereof
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
CN112372509B (en) * 2020-11-11 2022-02-25 西安奕斯伟硅片技术有限公司 Method and apparatus for changing initial state of polishing pad to hydrophilicity
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) * 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3100721A (en) * 1961-02-21 1963-08-13 Du Pont Process for producing microporous films and coatings
US5607488A (en) * 1990-05-21 1997-03-04 Wiand; Ronald C. Molded abrasive article and process
US5247765A (en) * 1991-07-23 1993-09-28 Abrasive Technology Europe, S.A. Abrasive product comprising a plurality of discrete composite abrasive pellets in a resilient resin matrix
AU654901B2 (en) * 1992-03-16 1994-11-24 De Beers Industrial Diamond Division (Proprietary) Limited Polishing pad
US6099394A (en) * 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
US5554064A (en) * 1993-08-06 1996-09-10 Intel Corporation Orbital motion chemical-mechanical polishing apparatus and method of fabrication
US5394655A (en) * 1993-08-31 1995-03-07 Texas Instruments Incorporated Semiconductor polishing pad
US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
DE69827789T2 (en) * 1997-01-13 2005-11-10 Rodel, Inc., Newark METHOD FOR PRODUCING A PHOTOLITHOGRAPHICALLY PATTERNED PLASTIC POLISHING PILLOW
WO1998045087A1 (en) * 1997-04-04 1998-10-15 Rodel Holdings, Inc. Improved polishing pads and methods relating thereto
US6022268A (en) * 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
JP2001522316A (en) * 1997-04-18 2001-11-13 キャボット マイクロエレクトロニクス コーポレイション Polishing pad for semiconductor substrate
US5928070A (en) * 1997-05-30 1999-07-27 Minnesota Mining & Manufacturing Company Abrasive article comprising mullite
GB2334205B (en) * 1998-02-12 2001-11-28 Shinetsu Handotai Kk Polishing method for semiconductor wafer and polishing pad used therein
US6095902A (en) * 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) * 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1161322A4 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6568997B2 (en) 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
JP4686912B2 (en) * 2001-06-15 2011-05-25 東レ株式会社 Polishing pad
JP2002370157A (en) * 2001-06-15 2002-12-24 Toray Ind Inc Polishing pad
US8148441B2 (en) 2005-03-08 2012-04-03 Toyo Tire & Rubber Co., Ltd. Polishing pad and manufacturing method thereof
US8094456B2 (en) 2006-01-10 2012-01-10 Toyo Tire & Rubber Co., Ltd. Polishing pad
US8349041B2 (en) 2006-07-14 2013-01-08 Saint-Gobain Abrasives, Inc. Backingless abrasive article
US7963827B2 (en) 2006-07-14 2011-06-21 Saint-Gobain Abrastives, Inc. Backingless abrasive article
US8993648B2 (en) 2006-08-28 2015-03-31 Toyo Tire & Rubber Co., Ltd. Polishing pad
US9358661B2 (en) 2006-08-28 2016-06-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US8865785B2 (en) 2007-03-28 2014-10-21 Toyo Tire & Rubber Co., Ltd. Polishing pad
EP3126092A1 (en) * 2014-04-03 2017-02-08 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
EP3126092B1 (en) * 2014-04-03 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
CN110181828A (en) * 2019-05-10 2019-08-30 常熟安通林汽车饰件有限公司 A method of avoiding coating member bulge

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US20020098782A1 (en) 2002-07-25
US6354915B1 (en) 2002-03-12
CN1137013C (en) 2004-02-04
EP1161322A1 (en) 2001-12-12
US6500053B2 (en) 2002-12-31
KR100585480B1 (en) 2006-06-02
JP2002535843A (en) 2002-10-22
KR20010101623A (en) 2001-11-14
EP1161322A4 (en) 2003-09-24

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