WO2000010020A1 - Method for measuring two-dimensional potential distribution in cmos semiconductor components - Google Patents

Method for measuring two-dimensional potential distribution in cmos semiconductor components Download PDF

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Publication number
WO2000010020A1
WO2000010020A1 PCT/DE1999/002380 DE9902380W WO0010020A1 WO 2000010020 A1 WO2000010020 A1 WO 2000010020A1 DE 9902380 W DE9902380 W DE 9902380W WO 0010020 A1 WO0010020 A1 WO 0010020A1
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WO
WIPO (PCT)
Prior art keywords
dimensional
electron
potential distribution
wave
distribution
Prior art date
Application number
PCT/DE1999/002380
Other languages
German (de)
French (fr)
Inventor
Wolf-Dieter Rau
Original Assignee
IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik filed Critical IHP GMBH Innovations for High Performance Microelectronics Institut für innovative Mikroelektronik
Priority to JP2000565406A priority Critical patent/JP2002522913A/en
Priority to EP99950492A priority patent/EP1105742A1/en
Priority to KR1020017001810A priority patent/KR20010072419A/en
Publication of WO2000010020A1 publication Critical patent/WO2000010020A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2653—Contactless testing using electron beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits

Definitions

  • the invention relates to a method for measuring the two-dimensional
  • US 5,523,700 contains a method for the quantitative determination of the doping profile
  • the measured doping distribution on the sample surface is due to e.g. B.
  • the object of the invention is a method for measuring the two-dimensional
  • the method according to the invention is based on the use of electron holography
  • Electron holography allows the two-dimensional measurement of the phase
  • the potential distribution is measured with the help of electron holography.
  • the method according to the invention is based on the method steps:
  • CMOS structures in particular CMOS
  • Transistor structures determined and / or physical models for the simulation of the
  • the first step is to prepare a thinned cross-sectional sample. This must be with a
  • Target preparation so that in the immediate vicinity of about 100 nm to
  • a flat electron wave 1 in the TEM is at
  • Objective lens 5 is enlarged modulated image wave 3 using a
  • Electron biprism 4 superimposed with a flat reference wave 6.
  • the generated Electron hologram 7 is registered by means of a digital CCD camera.
  • phase image becomes the
  • phase image is directly proportional to
  • a combination of amplitude and phase image also allows local determination of the sample thickness.
  • the two-dimensional doping distribution is subsequently determined by a

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The invention relates to a method for measuring two-dimensional potential distribution in CMOS semiconductor components and determining two-dimensional doping distribution. The invention aims at providing a method for measuring two-dimensional potential distribution in CMOS semiconductor components and determining of two-dimensional doping distribution, wherein a direct image of two-dimensional doping distribution and two-dimensional potential distribution in a transmission electron microscope is made possible. According to the invention, said method is based on the use of electron holography, especially electron off-axis holography, in a transmission electron microscope. Electron holography enables two-dimensional measurement of the phases of the electron waves in a transmission electron microscope. The phase image is directly proportional to the potential distribution in the space charge area of the PN junctions in semiconductor structures.

Description

Verfahren zur Vermessung der zweidimensionalen Potentialverteilung in CMOS-Method for measuring the two-dimensional potential distribution in CMOS
HalbleiterbauelementenSemiconductor devices
Die Erfindung bezieht sich auf ein Verfahren zur Vermessung der zweidimensionalenThe invention relates to a method for measuring the two-dimensional
Potentialverteilung in CMOS-Halbleiterbauelementen und Bestimmung derPotential distribution in CMOS semiconductor devices and determination of
zweidimensionalen Dotierverteilung.two-dimensional doping distribution.
Moderne Halbleiterbauelementstrukturen im Submikrometerbereich erfordern das EinbringenModern semiconductor component structures in the submicron range require the introduction
und die Manipulation von Dotierelementen in Silizium-Halbleiterbauelemente mit lateralerand the manipulation of doping elements in silicon semiconductor components with lateral
und vertikaler Genauigkeit im nm-Bereich. Die zweidimensionale Bestimmung solcherand vertical accuracy in the nm range. The two-dimensional determination of such
Dotierprofile an realen Bauelementen mit einer Ortsauflösung in dieser Größenordnung istDoping profiles on real components with a spatial resolution of this order of magnitude
von hoher Bedeutung zur Optimierung von physikalischen Modellen zur numerischenof great importance for the optimization of physical models for numerical
Simulation der komplexen Herstellungsprozesse und zur Fehleranalyse in real prozessiertenSimulation of complex manufacturing processes and for error analysis in real processed
Bauelementen. Bisher ist kein Verfahren bekannt, welches eine direkte Abbildung solcherComponents. So far, no method is known that directly maps such
zweidimensionaler Dotierprofile im Transmissionselektronenmikroskop (TEM) ermöglicht.enables two-dimensional doping profiles in the transmission electron microscope (TEM).
Die US 5,523,700 beinhaltet ein Verfahren zur quantitativen Bestimmung des DotierprofilsUS 5,523,700 contains a method for the quantitative determination of the doping profile
unter Nutzung der lokalen Kapazitätsänderungen an der Oberfläche eines Halbleitermaterials.using the local capacitance changes on the surface of a semiconductor material.
Die gemessene Dotierverteilung an der Probenoberfläche ist aufgrund von z. B.The measured doping distribution on the sample surface is due to e.g. B.
Präparationsartefakten oder Oberflächensegregation oft nicht repräsentativ für diePreparation artifacts or surface segregation are often not representative of the
Verhältnisse im Festkörper. Um eine lokale Kapazitätsänderung als Dotierverteilung zu quantifizieren, muß eine Modellierung der lokalen Kapazität erfolgen. Dies erfordert jedochSolid state conditions. To allow a local change in capacitance as a doping distribution quantify, the local capacity must be modeled. However, this requires
umfangreiche elektrische Simulationen.extensive electrical simulations.
Aufgabe der Erfindung ist es, ein Verfahren zur Vermessung der zweidimensionalenThe object of the invention is a method for measuring the two-dimensional
Potentialverteilung in CMOS-Halbleiterbauelementen und Bestimmung derPotential distribution in CMOS semiconductor devices and determination of
zweidimensionalen Dotierverteilung vorzuschlagen, bei dem eine direkte Abbildung derpropose two-dimensional doping distribution, in which a direct mapping of the
zweidimensionalen Dotierverteilung und der zweidimensionalen Potentialverteilung imtwo-dimensional doping distribution and the two-dimensional potential distribution in
Transmissionselektronenmikroskop ermöglicht wird.Transmission electron microscope is made possible.
Erfindungsgemäßes Verfahren basiert auf der Anwendung der Elektronenholographie,The method according to the invention is based on the use of electron holography,
insbesondere der Elektronen-Off-Axis Holographie, im Transmissionselektronenmikroskop.especially electron off-axis holography, in the transmission electron microscope.
Die Elektronenholographie erlaubt die zweidimensionale Vermessung der Phase derElectron holography allows the two-dimensional measurement of the phase
Elektronenwelle im Transmissionselektronenmikroskop. Das Phasenbild ist direkt proportional zur Potentialverteilung in der Raumladungszone von pn-Übergängen in Halbleiterstrukturen.Electron wave in the transmission electron microscope. The phase image is directly proportional to the potential distribution in the space charge zone of pn junctions in semiconductor structures.
Die Potentialverteilung wird mit Hilfe der Elektronenholographie gemessen.The potential distribution is measured with the help of electron holography.
Erfindungsgemäßes Verfahren basiert auf den Verfahrensschritten:The method according to the invention is based on the method steps:
- Erzeugung einer ebenen Elektronenwelle,- generation of a plane electron wave,
- Modulation der ebenen Elektronenwelle infolge Durchgang durch eine gedünnte- Modulation of the plane electron wave due to passage through a thinned
Querschnittsprobe des Halbleiterbauelements,Cross-sectional sample of the semiconductor component,
- Vergrößerung der modulierten Bildwelle mittels einer Objektivlinse,Enlarging the modulated image wave by means of an objective lens,
- Überlagerung der vergrößerten Bildwelle und einer ebenen Referenzwelle mittels Elektronenbiprisma, - Registrierung des erzeugten Elektronenhologramms mittels digitaler CCD-Kamera,Superimposition of the enlarged image wave and a flat reference wave by means of an electron biprism, - Registration of the generated electron hologram using a digital CCD camera,
Photoplatten oder anderer Detektorsysteme,Photo plates or other detector systems,
- Extrahierung der Phase der Bildwelle mittels Fourieranalyse und- Extraction of the phase of the image wave by means of Fourier analysis and
- Messung der zweidimensionalen Potentialverteilung aus dem Phasenbild.- Measurement of the two-dimensional potential distribution from the phase image.
Durch Vergleich mit numerischen Simulationen des Herstellungsprozesses werden dieBy comparison with numerical simulations of the manufacturing process, the
zweidimensionale Dotierverteilung in CMOS-Strukturen, insbesondere CMOS-two-dimensional doping distribution in CMOS structures, in particular CMOS
Transistorstrukturen, bestimmt und/oder physikalische Modelle für die Simulation desTransistor structures, determined and / or physical models for the simulation of the
Herstellungsprozesses optimiert.Manufacturing process optimized.
Die Merkmale der Erfindung gehen außer aus den Ansprüchen auch aus der Beschreibung undThe features of the invention go beyond the claims also from the description and
den Zeichnungen hervor. Ein Ausführungsbeispiel der Erfindung ist in der Zeichnungthe drawings. An embodiment of the invention is in the drawing
dargestellt und wird im folgenden näher erläutert.shown and is explained in more detail below.
Fig. 1 zeigt das Prinzip der elektronenholographischen Bestimmung der Potentialverteilung.1 shows the principle of electron holographic determination of the potential distribution.
Zuerst erfolgt die Präparation einer gedünnten Querschnittsprobe. Diese muß mit einerThe first step is to prepare a thinned cross-sectional sample. This must be with a
Zielpräparation so hergestellt werden, daß in unmittelbarer Umgebung von ca. 100 nm bisTarget preparation so that in the immediate vicinity of about 100 nm to
500 nm des zu untersuchenden Transistors ein „Loch" für die benötigte ebene500 nm of the transistor to be examined a "hole" for the required level
Referenzwelle 6, welche nicht durch die Probe geführt werden darf, entsteht. Die ProbendickeReference wave 6, which must not be passed through the sample, arises. The sample thickness
in der Gegend des zu untersuchenden Transistors sollte innerhalb eines optimalen Bereichsin the area of the transistor to be examined should be within an optimal range
zwischen 50 nm und 500 nm liegen. Eine ebene Elektronenwelle 1 im TEM wird beimare between 50 nm and 500 nm. A flat electron wave 1 in the TEM is at
Durchgang durch eine gedünnte Querschnittsprobe des pn-Übergangs eines CMOS- Transistors 2 durch die Potentialverteilung in der Phase moduliert. Die durch einePass through a thinned cross-sectional sample of the pn junction of a CMOS transistor 2 modulated by the potential distribution in the phase. The one
Objektivlinse 5 vergrößerte modulierte Bildwelle 3 wird mit Hilfe einesObjective lens 5 is enlarged modulated image wave 3 using a
Elektronenbiprismas 4 mit einer ebenen Referenzwelle 6 überlagert. Das erzeugte Elektronenhologramm 7 wird mittels digitaler CCD-Kamera registriert. Durch FourieranalyseElectron biprism 4 superimposed with a flat reference wave 6. The generated Electron hologram 7 is registered by means of a digital CCD camera. By Fourier analysis
werden Amplitude und Phase der Bildwelle 3 extrahiert. Aus dem Phasenbild wird dieamplitude and phase of the image wave 3 are extracted. The phase image becomes the
zweidimensionale Potentialverteilung gemessen. Das Phasenbild ist direkt proportional zurtwo-dimensional potential distribution measured. The phase image is directly proportional to
Potentialverteilung. Eine Kombination von Amplituden- und Phasenbild erlaubt zusätzlich eine lokale Bestimmung der Probendicke.Potential distribution. A combination of amplitude and phase image also allows local determination of the sample thickness.
Die anschließende Bestimmung der zweidimensionalen Dotierverteilung erfolgt durch eineThe two-dimensional doping distribution is subsequently determined by a
Anpassung der durch die Dotierverteilung erzeugten Potentialverteilung an die mit derAdaptation of the potential distribution generated by the doping distribution to that with the
Elektronenholographie gemessene Potentialverteilung. Dazu werden numerische SimulationenPotential distribution measured by electron holography. To do this, numerical simulations
des der Dotierverteilung entsprechenden Potentials verwendet.of the potential corresponding to the doping distribution.
In der vorliegenden Erfindung wurde anhand eines konkreten Ausführungsbeispiels einIn the present invention, a concrete exemplary embodiment was used
Verfahren zur Vermessung der zweidimensionalen Potentialverteilung in CMOS-Method for measuring the two-dimensional potential distribution in CMOS
Halbleiterbauelementen und Bestimmung der zweidimensionalen Dotierverteilung erläutert.Semiconductor components and determination of the two-dimensional doping distribution explained.
Es sei aber vermerkt, daß die vorliegende Erfindung nicht auf die Einzelheiten derHowever, it should be noted that the present invention is not limited to the details of the
Beschreibung im Ausführungsbeispiel eingeschränkt ist, da im Rahmen der Patentansprüche Änderungen und Abwandlungen beansprucht werden. Description in the exemplary embodiment is restricted since changes and modifications are claimed within the scope of the patent claims.

Claims

Patentansprüche claims
1. Verfahren zur Vermessung der zweidimensionalen Potentialverteilung in CMOS-1. Method for measuring the two-dimensional potential distribution in CMOS
Halbleiterbauelementen und Bestimmung der zweidimensionalen DotierverteilungSemiconductor components and determination of the two-dimensional doping distribution
dadurch gekennzeichnet, daß mittels Elektronenholographie die Phase einercharacterized in that by means of electron holography the phase of a
Elektronenwelle im Transmissionselektronenmikroskop vermessen wird, wobei die minimale laterale Auflösung im nm-Bereich liegt.Electron wave is measured in the transmission electron microscope, the minimum lateral resolution being in the nm range.
2. Verfahren nach Anspruch 1, gekennzeichnet durch die Verfahrensschritte2. The method according to claim 1, characterized by the process steps
- Erzeugung einer ebenen Elektronenwelle (1),- Generation of a plane electron wave (1),
- Modulation der ebenen Elektronenwelle (1) infolge Durchgang durch eine gedünnte- Modulation of the plane electron wave (1) as a result of passing through a thinned one
Querschnittsprobe des Halbleiterbauelements,Cross-sectional sample of the semiconductor component,
- Vergrößerung der modulierten Bildwelle (3) mittels einer Objektivlinse (5),- Magnification of the modulated image wave (3) by means of an objective lens (5),
- Überlagerung der vergrößerten Bildwelle (3) und einer ebenen Referenzwelle (6)- Superposition of the enlarged image wave (3) and a flat reference wave (6)
mittels Elektronenbiprisma (4),using electron biprism (4),
- Registrierung des erzeugten Elektronenhologramms (7),- Registration of the generated electron hologram (7),
- Extrahierung der Phase der Bildwelle (3) mittels Fourieranalyse und- Extraction of the phase of the image wave (3) by means of Fourier analysis and
- Messung der zweidimensionalen Potentialverteilung aus dem Phasenbild. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die- Measurement of the two-dimensional potential distribution from the phase image. A method according to claim 1 or 2, characterized in that the
zweidimensionale Dotierverteilung durch Anpassung an die gemessenetwo-dimensional doping distribution by adaptation to the measured
Potential Verteilung aufgrund numerischer Simulationen des HerstellungsprozessesPotential distribution based on numerical simulations of the manufacturing process
erfolgt. he follows.
PCT/DE1999/002380 1998-08-12 1999-07-30 Method for measuring two-dimensional potential distribution in cmos semiconductor components WO2000010020A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000565406A JP2002522913A (en) 1998-08-12 1999-07-30 Method for measuring two-dimensional potential distribution in CMOS semiconductor device and method for analyzing two-dimensional dopant distribution
EP99950492A EP1105742A1 (en) 1998-08-12 1999-07-30 Method for measuring two-dimensional potential distribution in cmos semiconductor components
KR1020017001810A KR20010072419A (en) 1998-08-12 1999-07-30 Method for measuring the two-dimensional potential distribution in cmos semiconductor components

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19837490A DE19837490A1 (en) 1998-08-12 1998-08-12 Method to measure two-dimensional potential distribution in CMOS semiconductor element and determine two-dimensional doping distribution, uses electron holography to measure phase of electron wave in transmission electron microscope
DE19837490.9 1998-08-12

Publications (1)

Publication Number Publication Date
WO2000010020A1 true WO2000010020A1 (en) 2000-02-24

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KR (1) KR20010072419A (en)
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WO (1) WO2000010020A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560692B2 (en) 2006-12-28 2009-07-14 International Business Machines Corporation Method of TEM sample preparation for electron holography for semiconductor devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6502646B2 (en) * 2014-10-21 2019-04-17 一般財団法人ファインセラミックスセンター Preparation method of electrode / electrolyte interface sample and in-situ observation method of potential distribution

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523700A (en) * 1995-03-22 1996-06-04 University Of Utah Research Foundation Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
WO1998012544A1 (en) * 1996-09-23 1998-03-26 Stmicroelectronics S.R.L. Contact macroradiography characterization of doped optical fibers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651154B2 (en) * 1987-09-04 1997-09-10 株式会社日立製作所 Electron holography equipment
DE4328083A1 (en) * 1993-08-20 1994-03-31 Ignaz Eisele Microscopic measuring of surface topography and potential distribution - laterally displacing field effect structure relative to scanned surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523700A (en) * 1995-03-22 1996-06-04 University Of Utah Research Foundation Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
WO1998012544A1 (en) * 1996-09-23 1998-03-26 Stmicroelectronics S.R.L. Contact macroradiography characterization of doped optical fibers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560692B2 (en) 2006-12-28 2009-07-14 International Business Machines Corporation Method of TEM sample preparation for electron holography for semiconductor devices

Also Published As

Publication number Publication date
DE19837490A1 (en) 2000-02-17
JP2002522913A (en) 2002-07-23
KR20010072419A (en) 2001-07-31
EP1105742A1 (en) 2001-06-13

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