WO2000003396A3 - Ferroelectric read/write memory having series-connected storage cells (cfram) - Google Patents

Ferroelectric read/write memory having series-connected storage cells (cfram) Download PDF

Info

Publication number
WO2000003396A3
WO2000003396A3 PCT/DE1999/001931 DE9901931W WO0003396A3 WO 2000003396 A3 WO2000003396 A3 WO 2000003396A3 DE 9901931 W DE9901931 W DE 9901931W WO 0003396 A3 WO0003396 A3 WO 0003396A3
Authority
WO
WIPO (PCT)
Prior art keywords
storage cells
series
ferroelectric
cfram
write memory
Prior art date
Application number
PCT/DE1999/001931
Other languages
German (de)
French (fr)
Other versions
WO2000003396A2 (en
Inventor
Ronny Schneider
Georg Braun
Original Assignee
Siemens Ag
Ronny Schneider
Georg Braun
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Ronny Schneider, Georg Braun filed Critical Siemens Ag
Priority to JP2000559568A priority Critical patent/JP2002520764A/en
Priority to EP99942749A priority patent/EP1099222B1/en
Priority to DE59905208T priority patent/DE59905208D1/en
Publication of WO2000003396A2 publication Critical patent/WO2000003396A2/en
Publication of WO2000003396A3 publication Critical patent/WO2000003396A3/en
Priority to US09/758,300 priority patent/US6697279B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Abstract

The invention relates to series-connected ferroelectric storage cells with which a resistor or a transistor is connected in series to the ferroelectric capacitor of a respective storage cell. Without impermissibly increasing the access time, the invention provides that the interfering pulses generated by reading out from or writing to the addressed storage cells are reduced at the ferroelectric capacitors of the storage cells which are not directly addressed. Said interfering pulses are reduced in such a way that they virtually no longer influence the storage cells which are not addressed.
PCT/DE1999/001931 1998-07-10 1999-07-01 Ferroelectric read/write memory having series-connected storage cells (cfram) WO2000003396A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000559568A JP2002520764A (en) 1998-07-10 1999-07-01 Ferroelectric write / read memory (CFRAM) having memory cells connected in series
EP99942749A EP1099222B1 (en) 1998-07-10 1999-07-01 Ferroelectric read/write memory having series-connected storage cells (cfram)
DE59905208T DE59905208D1 (en) 1998-07-10 1999-07-01 FERROELECTRIC WRITE / READ MEMORY WITH SERIAL CELLS (CFRAM)
US09/758,300 US6697279B2 (en) 1998-07-10 2001-01-10 Ferroelectric read/write memory with series-connected memory cells (CFRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19830963 1998-07-10
DE19830963.5 1998-07-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/758,300 Continuation US6697279B2 (en) 1998-07-10 2001-01-10 Ferroelectric read/write memory with series-connected memory cells (CFRAM)

Publications (2)

Publication Number Publication Date
WO2000003396A2 WO2000003396A2 (en) 2000-01-20
WO2000003396A3 true WO2000003396A3 (en) 2000-02-24

Family

ID=7873627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/001931 WO2000003396A2 (en) 1998-07-10 1999-07-01 Ferroelectric read/write memory having series-connected storage cells (cfram)

Country Status (8)

Country Link
US (1) US6697279B2 (en)
EP (1) EP1099222B1 (en)
JP (1) JP2002520764A (en)
KR (1) KR100615746B1 (en)
CN (1) CN1154115C (en)
DE (1) DE59905208D1 (en)
TW (1) TW434539B (en)
WO (1) WO2000003396A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3913451B2 (en) * 2000-08-23 2007-05-09 株式会社東芝 Semiconductor memory device
JP2008102982A (en) * 2006-10-17 2008-05-01 Toshiba Corp Ferroelectric memory
JP2008108355A (en) * 2006-10-25 2008-05-08 Toshiba Corp Ferroelectric semiconductor memory device and its reading method
JP6749021B2 (en) * 2015-05-15 2020-09-02 国立大学法人東北大学 Memory circuit with variable resistance element
DE102018215881B3 (en) * 2018-09-19 2020-02-06 Siemens Aktiengesellschaft Device and method for coupling two direct current networks

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19724449A1 (en) * 1996-06-10 1997-12-11 Toshiba Kawasaki Kk FRAM semiconductor memory for computer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320782B1 (en) * 1996-06-10 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
JP3766181B2 (en) * 1996-06-10 2006-04-12 株式会社東芝 Semiconductor memory device and system equipped with the same
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US5898609A (en) * 1998-05-29 1999-04-27 Samsung Electronics Co., Ltd. Ferroelectric memory having circuit for discharging pyroelectric charges

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19724449A1 (en) * 1996-06-10 1997-12-11 Toshiba Kawasaki Kk FRAM semiconductor memory for computer

Also Published As

Publication number Publication date
US6697279B2 (en) 2004-02-24
JP2002520764A (en) 2002-07-09
CN1154115C (en) 2004-06-16
EP1099222A2 (en) 2001-05-16
KR20010053482A (en) 2001-06-25
CN1308763A (en) 2001-08-15
WO2000003396A2 (en) 2000-01-20
DE59905208D1 (en) 2003-05-28
US20010015906A1 (en) 2001-08-23
TW434539B (en) 2001-05-16
KR100615746B1 (en) 2006-08-25
EP1099222B1 (en) 2003-04-23

Similar Documents

Publication Publication Date Title
KR100276569B1 (en) Ferroelectric memory device
TW281762B (en) Ferroelectric memory using reference charge circuit
US5574679A (en) Memory data protection for a ferroelectric memory
KR970023381A (en) Ferroelectric Memory
US20020031003A1 (en) Ferroelectric memory device
KR100743002B1 (en) Semiconductor integrated circuit device
US20190164579A1 (en) Sense amplifier with offset compensation
KR920020522A (en) Semiconductor integrated circuit
KR19990072706A (en) A semiconductor memory device
KR960035632A (en) Semiconductor memory device
KR920001536A (en) Semiconductor memory device
EP0193210A3 (en) Semiconductor memory device with a built-in test circuit
TW342502B (en) Gain memory cell with diode
KR970017613A (en) Ferroelectric semiconductor memory and its access method
WO2000003396A3 (en) Ferroelectric read/write memory having series-connected storage cells (cfram)
US6026009A (en) Ferroelectric memory device increasing voltage on a bit line to remove dummy cells and a reference voltage generator
JPS5785255A (en) Memory storage for integrated circuit
KR910020728A (en) Data Bus Clamp Circuit of Semiconductor Memory
CA1160742A (en) Static ram memory cell
US9236107B1 (en) FRAM cell with cross point access
ES8501558A1 (en) Integrated semiconductor memory.
CN1047249C (en) Semiconductor memory device
WO2004047116A8 (en) 2t2c signal margin test mode using different pre-charge levels for bl and /bl
US20040190322A1 (en) Circuit and method for reducing the effects of memory imprinting
JP4154392B2 (en) Semiconductor memory device and data reading method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 99808496.4

Country of ref document: CN

AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

AK Designated states

Kind code of ref document: A3

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1999942749

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2000 559568

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020017000423

Country of ref document: KR

Ref document number: 09758300

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 1999942749

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020017000423

Country of ref document: KR

WWG Wipo information: grant in national office

Ref document number: 1999942749

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1020017000423

Country of ref document: KR