WO2000002829A2 - Ceramic and process for the continuous sintering thereof - Google Patents
Ceramic and process for the continuous sintering thereof Download PDFInfo
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- WO2000002829A2 WO2000002829A2 PCT/US1999/014231 US9914231W WO0002829A2 WO 2000002829 A2 WO2000002829 A2 WO 2000002829A2 US 9914231 W US9914231 W US 9914231W WO 0002829 A2 WO0002829 A2 WO 0002829A2
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- Prior art keywords
- sialon
- ceramic
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- process according
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- 239000000919 ceramic Substances 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000005245 sintering Methods 0.000 title claims description 35
- 239000000203 mixture Substances 0.000 claims abstract description 112
- 238000010438 heat treatment Methods 0.000 claims abstract description 56
- 239000000843 powder Substances 0.000 claims abstract description 32
- 238000010924 continuous production Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 4
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000005520 cutting process Methods 0.000 claims description 165
- 229910003564 SiAlON Inorganic materials 0.000 claims description 110
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- 238000006557 surface reaction Methods 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 229910010293 ceramic material Inorganic materials 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 230000000704 physical effect Effects 0.000 claims description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- -1 hafnium nitride Chemical class 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000314 lubricant Substances 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 239000010456 wollastonite Substances 0.000 claims description 2
- 229910052882 wollastonite Inorganic materials 0.000 claims description 2
- 239000011819 refractory material Substances 0.000 claims 6
- 229910026551 ZrC Inorganic materials 0.000 claims 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims 1
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- 238000012360 testing method Methods 0.000 description 40
- 238000012545 processing Methods 0.000 description 22
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 20
- 238000000227 grinding Methods 0.000 description 13
- 230000004580 weight loss Effects 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 238000010923 batch production Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910001060 Gray iron Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 229910001119 inconels 625 Inorganic materials 0.000 description 4
- 229910000816 inconels 718 Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910001247 waspaloy Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052576 carbides based ceramic Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 238000000585 Mann–Whitney U test Methods 0.000 description 2
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009837 dry grinding Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000916 dilatatory effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003703 image analysis method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011226 reinforced ceramic Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910021427 silicon allotrope Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Definitions
- the invention pertains to a continuous heat treating (e.g., sintering) process for the production of ceramics, as well as the resulting ceramic wherein these ceramics may be used as cutting inserts, nozzles, wear parts and the like.
- a continuous heat treating e.g., sintering
- ceramics have been produced using a batch process. These ceramics have included silicon nitride-based ceramics, SiAlON-based ceramics, alumina-based ceramics, zirconia-based ceramics, titanium nitride-based ceramics, titanium carbide-based ceramics, and titanium carbonitride-based ceramics. These ceramics have also optionally contained additives which included whiskers such as, for example, silicon carbide, titanium carbide and/or titanium nitride whiskers so as to provide for whisker-reinforced ceramics. These additives have also comprised zirconia, as well as the nitrides, carbides, borides and carbonitrides of titanium, hafnium and zirconium.
- whiskers such as, for example, silicon carbide, titanium carbide and/or titanium nitride whiskers so as to provide for whisker-reinforced ceramics.
- additives have also comprised zirconia, as well as the nitrides, carbides, borides
- SiAlON-based ceramics have been produced using a batch process.
- U.S. Patent No. 4,563,433 to Yeckley et al . for a Ceramic Material and Method of Manufacture (which is hereby incorporated by reference herein) describes such a batch process wherein a plurality of green compacts are buried in a boron nitride/silicon nitride setting powder mixture in a graphite pot. The pot, setting powder and green compacts are placed in a graphite element resistance-heated batch furnace, and then subjected to a heat treatment (e.g., sintering) process.
- a heat treatment e.g., sintering
- SiAlON-based ceramics e.g., cutting inserts
- silicon nitride-based ceramics e.g., cutting inserts
- a reaction layer forms on and near the surface of the cutting insert. In batch processing, this surface reaction layer typically has a nominal thickness between about .010 inches (.254 millimeters [mm]) and about
- This surface reaction layer causes a change in the color of the surface of the cutting insert so that a batch-processed SiAlON-based or silicon nitride-based cutting insert does not exhibit a uniform surface color or appearance.
- the surface of the batch-processed cutting insert must be ground at least .010-.015 inches so as to remove the surface reaction layer.
- the process for making a batch-processed ceramic part requires that the ceramic part be physically removed from the tray in which it was delubed, and then physically placed in the tray in which it is batch processed. It is apparent that this transfer step adds an additional step, as well as labor costs, to the overall batch process. It would be desirable to be able to provide a process in which the ceramic part remained in the same container or tray from the delubing operation through the sintering operation. Such an advantage would reduce the number of manufacturing steps and the amount of labor needed in the production of a ceramic part.
- the invention is a continuous process for the manufacture of a ceramic sintered compact wherein the process comprises the steps of : forming a green compact from a powder mixture comprising a first component comprising compounds which contain elements of silicon, aluminum, oxygen and nitrogen; and the powder mixture further comprising a second component comprising a compound of at least one element selected from the group consisting of yttrium, scandium, cerium, lanthanum and the metals of the lanthanide series, and the second component comprising between 0.1 and 10 weight percent of the powder mixture; heat treating the green compact wherein the heat treatment comprises: continuously passing the green compact through at least one heating zone so as to produce a sintered compact.
- the invention is a continuous process for the manufacture of a ceramic sintered compact wherein the process comprises the steps of : forming a green compact from a powder mixture of silicon nitride and one or more sintering aids; subjecting the green compact to a heat treatment wherein the heat treatment comprises continuously passing the green compact through at least one heating zone so as to form the sintered compact and wherein the heating zone is at a temperature greater than 1750 °C; and the ceramic comprising a beta-silicon nitride phase and an intergranular phase.
- the invention is a ceramic cutting insert which comprises a cutting insert body which has an as-molded rake face and an as- molded flank face wherein the rake face intersects with the flank face to form a cutting edge at the intersection.
- the cutting body has at least one of the as-molded rake face and the as-molded flank face does not have a surface reaction layer.
- the invention is a ceramic cutting insert that comprises a cutting insert body which has a microstructure including pockets of a glassy phase. At least ninety percent of the pockets of the glassy phase have a major axis which is of a dimension of one micron or less.
- the invention is a sintered ceramic body which comprises a substrate that comprises a two-phase composite of alpha' -SiAlON and beta' SiAlON, and a glassy phase.
- the substrate presents a surface.
- the substrate has a surface region extending inwardly from the surface with a bulk region beneath the surface region.
- the surface region has a higher alpha' -SiAlON content than the bulk region.
- FIG. 1 is an isometric view of an embodiment of a ceramic cutting insert of the instant invention
- FIG. 2 is a box and whisker plot showing the fracture toughness [K IC (E&C)] (MPa m 1/2 ) versus the belt speed (inches per minute) for continuously-processed SiAlON based sintered compacts of Composition B
- FIG. 3 is a photomicrograph at a magnification of 11X of a polished cross-section of a continuously-processed SiAlON-based sintered compact of Composition B sintered at a temperature of 1800 °C for sixty minutes and wherein the photomicrograph shows the surface of the sintered compact;
- FIG. 4 is a photomicrograph at a magnification of 11X of a polished cross-section of a continuously-processed SiAlON-based sintered compact of Composition B sintered at a temperature of 1760 °C for one hundred twenty minutes and wherein the photomicrograph shows the surface of the sintered compact ;
- FIG. 5 is a box and whisker plot showing the Vickers hardness (GPa) [18.5 Kg Load] verses the sintering temperature (°C) for continuously-processed SiAlON-based sintered compacts of Composition A;
- FIG. 6 is a box and whisker plot showing the fracture toughness K IC (E&C) (MPa m 1/2 ) versus the sintering temperature (°C) for continuously-processed SiAlON-based sintered compacts of Composition A;
- FIG. 7 is a box and whisker plot showing the fracture toughness K IC (E&C) (MPa m 1/2 ) verses the belt speed (inches per minute) for continuously-processed SiAlON-based sintered compacts of Composition A;
- FIG. 8 is a photomicrograph at a magnification of 11X of a polished cross-section of a continuously-processed SiAlON-based sintered compact of Composition A sintered at a temperature of 1800 °C for sixty minutes and wherein the photomicrograph shows the surface of the sintered compact;
- FIG. 9 is a photomicrograph at a magnification of 11X of a polished cross-section of a continuously-processed SiAlON-based sintered compact of Composition A sintered at a temperature of 1760 °C for one hundred twenty minutes and wherein the photomicrograph shows the surface of the sintered compact ;
- FIG. 10 is a photomicrograph at a magnification of 11X of a polished cross-section of a continuously-processed SiAlON-based sintered compact of Composition B sintered at 1760 °C for sixty minutes and wherein the photomicrograph shows the surface of the sintered compact;
- FIG. 11 is a photomicrograph at a magnification of 3560X (the width of the photomicrograph is 34 micrometers) of the microstructure of a continuously-processed SiAlON-based sintered compact of Composition B;
- FIG. 12 is a photomicrograph at a magnification of 3560X (the width of the photomicrograph is 34 micrometers) of the microstructure of a batch-processed SiAlON-based sintered compact of composition B;
- FIG. 13 is a box and whisker plot showing the dimension (microns) of the major axis of glass pockets for a continuously-processed (belt-sintered) SiAlON- based cutting insert of composition B and a batch- processed SiAlON-based cutting insert of Composition B;
- FIG. 14 is an isometric view of a belt sintering furnace used for the continuous processing of green compacts into sintered compacts; and FIG. 15 is an X-ray diffraction pattern of a partially exposed surface of a cutting insert of Composition A held at 1800 °C for 120 minutes;
- FIG. 16 is an X-ray diffraction pattern of an exposed surface of a cutting insert of Composition A held at 1800 °C for 120 minutes; and
- FIG. 17 is an X-ray diffraction pattern of the bulk of a cutting insert of Composition A held at 1800 °C for 120 minutes.
- FIG. 1 a ceramic cutting insert generally designated 20.
- Cutting insert 20 has a rake surface 22, and flank surfaces 24. There are cutting edges 26 at the intersections of the rake surface 22 and the flank surfaces. The rake face and the flank face (or both) may be in an as-molded condition.
- the cutting insert of the instant invention may take on any one of a variety of cutting insert geometries so that the scope of the instant invention is not intended to be limited to the geometry of the specific cutting insert illustrated in FIG. 1. This description is of a cutting insert, however, the invention has application to other kinds of ceramic parts such as nozzles, wear parts, and the like.
- the ceramic cutting inserts in addition to SiAlON-based and silicon nitride-based materials, pertain without limitation to ceramic materials such as, for example, alumina, alumina-based ceramics (e.g., alumina+titanium carbide, alumina+zirconia, alumina+zirconia+silicon carbide whiskers, and alumina+silicon carbide whiskers) , zirconia, zirconia-based ceramics, titanium carbide- based ceramics, titanium nitride-based ceramics, titanium carbonitride-based ceramics (e.g, titanium carbonitride+silicon carbide whiskers+alumina) , titanium boride-based ceramics, hafnium boride-based ceramics, and zirconium boride-based ceramics, and the like.
- ceramic materials such as, for example, alumina, alumina-based ceramics (e.g., alumina+titanium carbide, alumina+zirconia
- the batch-processed sintered compact typically required .010-.015 inches (.254-381 mm) of grinding while the continuously-processed cutting insert requires only .005 inches (.127 mm) or less of grinding.
- Applicant's continuous process also eliminates the need to physically transfer the delubed green compact to another container for subsequent sintering since the compacts remain in the same container.
- beta ' - SiAlON phase is a hexagonal phase having the general formula Si 6 __Al_O z N 8 _ z wherein z ranges between zero and about 4.2
- alpha ' -SiAlON is a hexagonal phase having the general formula (Si,Al) 12 M X (0,N) 16 wherein M is Li, Ca, Y or some other lanthanide and X has a theoretical maximum value equal to 2 when M is Ca, but when M is Y, the practical maximum value of X is equal to 0.7
- alpha-silicon nitride is an unsubstituted allotrope of silicon nitride
- N-YAM is a monoclinic phase of
- the powder components are ball milled, dried, screened, and then agglomerated with a lubricant. This powder mixture is then uniaxially pressed into the green cutting insert compacts.
- These green cutting insert compacts are delubed in an oven, and after delubing are then continuously processed according to the continuous process of the invention. It should be appreciated that as an option for the continuous process, the delubing step may take place in a furnace that is in line with the sintering furnace so that the green compacts are continuously delubed and sintered.
- furnace 30 is like the furnace set forth U.S. Patent
- These heating zones are in a furnace region 34 and each one is twelve inches (30.48 centimeters [cm]) long. These heating zones comprise a first heating zone 36 into which the parts first pass.
- the first heating zone 36 may be at any selected temperature, but it is preferable that the temperature in the first heating zone 36 be at or near the target sintering temperature.
- the green compacts enter the first heating zone they typically are heated at a rate of between 150 °C/minute and 200 °C/minute until they reach the temperature in the first heating zone.
- the parts pass through the first heating zone 36 into the second heating zone 38.
- the second heating zone 38 may be at any selected temperature, but typically is at the maximum (or target) sintering temperature for the process .
- the parts pass through the second heating zone 38 into the third heating zone 40.
- the third heating zone 40 may be at any selected temperature, but it is typical that the third heating zone is at a temperature equal to the temperature of the second heating zone. It should be appreciated that the temperatures of the heating zones may vary depending upon the specific application.
- a nitrogen atmosphere is maintained in all three heating zones by introducing flowing nitrogen gas therein.
- the parts e.g., green cutting insert compacts
- boron nitride saggers of three different sizes [as measured in inches] (4x4x1, and 4x4x2 and 4x8x4) .
- These saggers each had lids loosely fitted on them.
- the use of lids avoided direct radiation heating of the compacts and minimized the volatization of the constituent materials from the compacts.
- Setting powder was not used in this continuous process.
- the saggers and the green compacts were then continuously passed through the belt furnace 30. The end result was that the green compacts were transformed into fully densified SiAlON-based sintered compacts or cutting inserts, except for any necessary edge preparation.
- Examples 1-36 use any one of three compositions, i.e., Composition A, Composition B, and Composition C.
- the powder components of the compositions is set forth in Table I below.
- composition A the silicon nitride was a lower purity nitrided silicon nitride available from Herman C. Starck of New York, New York (USA) .
- the silicon nitride was Grade SNE10 silicon nitride powder from Ube Industries, Ltd. of Tokyo, Japan.
- the aluminum nitride was Grade C AlN powder available from Herman C. Starck, Inc. of New York, New York (USA) .
- the alumina was Grade Ceralox HPA 0.5 and is available from Ceralox Corporation of Arlington, Arizona (USA) .
- the yttria powder was fine grade yttria from Herman C. Starck, Inc. of New York, New York (USA) . More detailed descriptions of these powders is found in U.S. Patent No. 5,370,716 to Mehrotra et al . , which has already been incorporated by reference herein.
- Table II sets forth the various processing parameters of the SiAlON-based sintered compacts of Composition A.
- the "Ex.” refers to the examples
- “Tl” refers to the temperature (°C) in the first heating zone
- “T2” refers to the temperature (°C) in the second heating zone
- “T3” refers to the temperature (°C) in the third heating zone
- the belt speed refers to the speed of the silicon carbide belt in inches per minute
- the total time in the heating zones is the sum of the time in minutes the compact spends in the three heating zones .
- Table III below sets forth the physical properties of the as-sintered silicon nitride-based sintered compacts (Examples 1-6) of Composition A.
- the microstructure of the sintered compacts of Composition A is set forth in Table III below.
- composition A Composition A
- alpha-silicon nitride is present
- the density (as measured in grams per cubic centimeter) was essentially fully dense and comparable to the density of sintered compacts obtained by a batch process .
- the Vickers hardness (18.5Kg Load) as measured in gigapascals [GPa] , was dependent upon the temperature with the hardness decreasing at 1800 °C wherein a higher hardness was obtained at a sintering temperatures of either 1720 °C or 1760 °C.
- K IC fracture toughness
- E&C fracture toughness measured by the Evans and Charles method on a polished surface employing the Palmquist indentation technique using a 18.5 kg load on a Vickers indentor (see Evans and Charles, "Fracture Toughness Determination by Indentation", J. American Ceramic Society, Vol. 59, No. 7-8, pp. 371-372) .
- the fracture toughness of the sintered compact sintered at 1720 °C was slightly lower than the toughness of the sintered compact which was sintered at 1760 °C or at 1800 °C.
- the toughness of the sintered compact was highest for the lowest belt speed of 0.3 inches/minute.
- the alpha' -SiAlON and beta 1 -SiAlON content was within an acceptable range.
- the alpha-silicon nitride content was present for the sintered compact sintered at 1720 °C for 60 minutes.
- Beta-phase of silicon nitride was not detected in any of the continuously-processed sintered compacts of Composition A.
- the powder for Composition A was contaminated so that there were numerous pits in the sintered compacts.
- FIGS. 8 and 9 visual observation showed that there was little or no reaction layer for the sintered compacts sintered at 1800 °C for 60 minutes (FIG. 8) , but there was an apparent reaction layer for the sintered compact sintered at 1760 °C for 120 minutes (FIG. 9) . However, the depth of the reaction layer of FIG. 9 was thinner than the typical surface reaction layer found in batch-processed sintered compacts.
- SiAlON-based sintered compacts of a Composition B (Examples 7-12) were processed in a continuous fashion like the sintered compacts of Composition A. The continuous processing occurred in the same belt style furnace used for processing sintered compact Examples Nos. 1-6.
- Table IV and Table V below set forth the processing parameters and the physical properties for the continuously-processed sintered compacts
- Table V below sets forth the physical properties of the as-sintered SiAlON-based sintered compacts of Composition B.
- the weight loss, the density, the Vickers hardness, and the fracture toughness mean the same thing for Table V as for Table III .
- the weight loss appeared to be dependent on the temperature and the duration in that the weight loss increased with an increase in the temperature and an increase in the sintering duration.
- the weight loss seems to have been due to the volatization of the constituent materials.
- the extent of weight loss is comparable to that for batch- processed sintered compacts of the same composition.
- the density of the sintered compacts was greater than the target density of 3.16 grams per cubic centimeter.
- the Vickers hardness (18.5 Kg load) did not appear to be dependent upon the continuous sintering conditions.
- the fracture toughness [K IC E&C) ] of the sintered compacts of Composition B was higher than the target range of 4.3 to 5.7 MPa m 1/2 , but appeared to be dependent upon the belt speed of the continuous process (FIG.2).
- a slower belt speed yielded a higher fracture toughness in that the two highest fracture toughness values were of sintered compacts processed at the slowest belt speed of .3 inches per minute .
- the uniformity of the microstructure of the sintered compacts was excellent. Referring to FIGS. 3 and 4, the sintered surfaces were very clean wherein no reaction layer was observed on the surface of the sintered compacts of Examples 7-12.
- sintered compact Examples 1-6 and sintered compact Examples 7-12 show that the sintered compacts processed according to the continuous process produced sintered compacts with acceptable physical properties and a clean surface either without a reaction surface layer or with only a thin surface reaction layer.
- the batch processing parameters were: (1) placing the green compacts in graphite pots with a setting powder; (2) heating the compacts at 15 °C/minute to the sintering temperature of between 1800-1825 °C, and holding the compacts at the sintering temperature for 90 minutes under one atmosphere of nitrogen.
- Table VI below sets forth the physical properties.
- the continuously- processed cutting inserts of Composition B had between about one and one-half and about three times the tool life as compared to the batch-processed cutting inserts of Composition B.
- the results of the testing on Waspalloy and Inconel 625 are set forth below.
- the operating parameters were a speed of 770 surface feet per minute [234.7 surface meters per minute], a feed of between .005 and .009 inches [.127-229 mm] per revolution, and a depth of cut of between about
- Results for turning Inconel 718 are set forth below in Table VII.
- the test conditions for this turning test were: a RNG-45T style cutting insert; a speed of 600 surface feet per minute (sfm)
- Table VII shows the results for four replications of each cutting insert.
- the failure mode was by maximum flank wear of .030 inches. In other words, the test was stopped and the tool life recorded in minutes when the flank wear reached .030 inches.
- a review of the test results set forth in Table VII shows that the tool life of the continuously-processed cutting insert of Composition A was essentially equivalent to the tool life of the batch-processed cutting insert of Composition A.
- the turning test results for turning Inconel 718 using continuously-processed cutting inserts of composition B as compared to batch-processed cutting inserts of composition B are set forth below in Table VIII.
- the test conditions for this turning test were: a RNG-45T style cutting insert; a speed of 600 surface feet per minute (sfm) [182.9 surface meters per minute]; a feed of .006 inches per revolution [.152 mm per revolution]; a depth of cut of .080 inches depth of cut [2.03 mm depth of cut] ; and flood coolant with sol 20:1.
- Table VIII shows four replications for each cutting insert.
- the failure mode was maximum flank wear of .030 inches.
- the failure mode was by maximum flank wear of .030 inches which meant that the test was stopped and the tool life recorded in minutes when the flank wear reached .030 inches.
- the continuously-processed cutting inserts of Composition B had performance comparable to the batch-processed cutting inserts (Composition B) .
- a comparison of the microstructure of the continuously-processed cutting insert and the batch- processed cutting insert of Composition B showed that the continuously-processed cutting insert had superior microstructural properties. These microstructural differences may account for the performance improvement observed with the continuously-processed cutting inserts of Composition B over the batch-processed cutting inserts of Composition B.
- a continuously- processed cutting insert of Composition B and a batch- processed cutting insert of Composition B were prepared for grain size measurements in the following fashion. After polishing, the inserts were etched in 450 °C molten KOH wherein the etch time was 35 seconds for each cutting insert. Grain measurements were completed on the batch-processed cutting insert of Composition B. But the grain boundaries had not etched sufficiently on the continuously-processed cutting insert of Composition B and a grain size comparison could not be completed.
- FIGS. 11 and 12 presents the microstructures of the continuously-processed cutting insert and the batch-processed cutting insert, respectively.
- the jandel sigmascan pro V3 was used to compare the glass pocket sizes.
- the etched pockets had a grey level similar to the center of the SiAlON grains. So, measuring the glass pockets based on grey level distribution was difficult. Setting the grey level range so that dark regions of the grains were not included underestimated the pocket size.
- the final image analysis method was a single pass with the ranking filter. The rank was set at 9 dilating dark areas. Then three passes with the averaging convolution filter was completed. The divisor was set at 9.
- a binary image was made highlighting grey level range 0 to 60-67. This binary layer selected the center glass pocket region.
- a second binary layer highlighted the grey levels from 40 to 84. The upper limit could be lower and the lower limit higher depending on the SEM image contrast. This second layer overlapped the first layer and captured a greater amount of the pocket . But regions in the SiAlON grain centers were also highlighted in the second layer. The upper limit of the second layer was set so the glass pockets did not merge with regions extending from the grain center.
- the two layers were merged into a third binary layer. The objects in the third layer were measured and tabulated. The objects in the third layer were total areas. The objects in the second layer were tabulated and measured.
- the second layer object was a grain center that area was the same as the its area in the third layer. But the area of the glass pocket in the second layer is reduced by the grey level that was in the first layer and not the second. Since the second layer formed a region around the first, the second layer objects were measured in the same order as the third layer. The grain center objects were eliminated by subtracting the second object area from the third. All values of 0 were grain centers. This resulted in a better estimation of the large glass pockets. But it did not sample the smaller pockets well . Some of these pockets would not be selected until the grey level reached the overlap region between the first and second layer. Therefore the second layer area would be the same as the third and these objects would be eliminated.
- the glass pockets were measured from four micrographs for each one of the cutting inserts (continuously-processed and batch-processed) of Composition B.
- the magnification was 2500X. Over two thousand glass pockets were measured from each one of the cutting inserts.
- the two glass pocket distributions were compared by the Mann-Whitney U Test . The major axis length distributions were compared.
- the Mann-Whitney U Test results in Table VIII found the difference in the two distributions to be very significant. The high Z value signifies a very high confidence that the distributions were different.
- the batch-processed cutting insert of Composition B had larger glass pockets than the continuously-processed cutting insert.
- the measurement method supports a difference in the glass distribution, but it under estimates the size of the glass pockets.
- the more uniform distribution of the glass pockets of the continuously- processed cutting insert could contribute to the improved resistance to chipping observed in the metal cutting field tests.
- the Mann-Whitley U Test results for these measurements are set forth in Table IX below.
- Table X The test results below in Table X and Table XI compare the milling properties of continuously-processed cutting insert of Composition C against a batch-processed cutting insert of Composition C. Table X below sets forth the composition and processing parameters for cutting insert Examples 19-25. Table X
- composition refers to the composition of the example
- Process refers to the type of process (either continuous or batch)
- Tempo refers to the maximum sintering temperature (°C) for the continuously-processed cutting inserts
- Time refers to the total time in minutes the cutting inserts were at the sintering temperature .
- the test conditions for this turning test were: a SPG-633T style cutting insert; the workpiece material was Class 40 Gray Cast Iron; a speed of 3000 surface feet per minute (sfm) [914.5 surface meters per minute]; a feed of .009 inches per revolution [.229 mm per revolution]; a depth of cut of .080 inches depth of cut [2.03 mm depth of cut]; the width of the cut was 3 inches [7.62 cm] by 24 inches [61 cm]; and dry milling using no coolant.
- the end of tool life (EOL) criteria were: .015 inches flank wear (fw) ; .030 inches maximum flank wear ( fw) ; .030 inches nose wear (nw) ; and .030 inches depth of cut notch (dn) or chip (cp) .
- the tool life reflects the actual chip cutting time in minutes.
- Table XII The test results below in Table XII and Table XIII compare the milling properties of continuously-processed cutting inserts of Composition C against batch-processed cutting inserts of Composition C. Table XII below sets forth the composition and processing parameters for cutting insert Examples 25-28.
- test conditions for this turning test were: a SPG-633T style cutting insert; a speed of 3000 surface feet per minute (sfm) [914.5 surface meters per minute]; a feed of .006 inches per revolution [.152 mm per revolution]; a depth of cut of .080 inches depth of cut [2.03 mm depth of cut]; the width of the cut was 3 inches [7.62 cm] by 24 inches [61 cm] ; and dry milling using no coolant.
- the end of tool life (EOL) criteria were: .015 inches flank wear (fw) ; .030 inches maximum flank wear (mw) ; .030 inches nose wear (nw) ; and .030 inches depth of cut notch (dn) or chip (cp) .
- the tool life reflects the actual chip cutting time in minutes.
- the cutting insert of Composition C held in the heating zones for 180 minutes an average tool life in passes of 51.2 passes and an average tool life in minutes of 26.6 minutes.
- the performance of this cutting insert was somewhat better than that of the batch-processed cutting insert (Example 28) .
- the continuously-processed cutting inserts held in the heating zones for 60 minutes and 120 minutes had much better performance characteristics .
- Table XIV and Table XV below reflect the results from turning tests of continuously-processed cutting inserts of Composition C as compared to batch-processed cutting inserts of Composition C.
- Table XIV below sets forth the composition and processing parameters for cutting insert Examples 29-32.
- test conditions for this turning test were: a SPG-633T style cutting insert with a lead angle of 16 degrees; a workpiece material of Class 40 Gray Cast Iron; a speed of 2000 surface feet per minute (sfm) [610 surface meters per minute] ; a feed of .016 inches per revolution [.406 mm per revolution]; a depth of cut of .100 inches depth of cut [2.54 mm depth of cut] ; and dry turning using no coolant.
- the end of tool life (EOL) criteria were: .015 inches flank wear (fw) ; .030 inches maximum flank wear (mw) ; .030 inches nose wear (nw) ; and .030 inches depth of cut notch (dn) or chip (cp) .
- the tool life reflects the actual chip cutting time in minutes.
- the continuously-processed cutting inserts of Composition C displayed better performance in turning Class 40 Gray cast iron than the batch- processed cutting insert.
- the continuously-processed cutting insert held at 1826 °C for 180 minutes (Example 31) exhibited the longest average tool life of 14.6 minutes as compared to the batch-processed cutting insert (Example 32) which had an average tool life-of 11.8 minutes.
- the cutting inserts as described above may be coated with a refractory coating for improved wear resistance.
- Conventional coating techniques may be used to coat these cutting inserts such as chemical vapor deposition and physical vapor deposition.
- Exemplary coating materials include alumina, titanium carbonitride and titanium nitride.
- Ceramic compacts of Composition A were continuously processed in a furnace along the lines of the furnace described in U.S. Patent No. 5,648,042, except that the furnace had four heating zones. Each heating zone was twelve inches long and was held at a temperature of 1800 °C. The belt speed was .4 inches per minute so that the total time the green compacts spent in the heating zones was 120 minutes. The green ceramic compacts were placed in trays wherein some of the green compacts had boron nitride setting powder thereon to keep the parts from sticking together. Some of the green compacts did not use any setting powder.
- batch-processed ceramic parts of Composition A typically form a surface reaction layer.
- This surface reaction layer generally is comprised of ⁇ ' -SiAlON and ⁇ 1 -SiAlON and B phase (Y 2 SiAl0 5 N) .
- B phase Y 2 SiAl0 5 N
- FIG. 15 shows a higher ⁇ ' -SiAlON content than that of the exposed surface.
- the higher ⁇ '-SilAlON content is due to the fact that the stacked surface was protected to some extent from (or was partially exposed to) the sintering atmosphere (or furnace environment) while the exposed surface was in direct exposure to (or contact with) the sintering atmosphere. It is important to appreciate that even though the local sintering environments for the exposed surface and the stacked surface were different, both surfaces had a high ⁇ ' -SiAlON content in the surface regions thereof .
- FIG. 17 shows the ⁇ ' -SiAlON content to be 18.3 weight percent and the ⁇ ' -SiAlON content to be 81.7 weight percent.
- a cutting insert was crushed prior to running the X-ray diffraction procedure .
- the ⁇ ' -SiAlON content ranged between 57 weight percent to 92 weight percent with minor amounts of YAM and the balance ⁇ ' -SiAlON.
- the bulk composition of the ceramic was 20 weight ⁇ ' -SiAlON and 80 weight percent ⁇ ' -SiAlON. Although no tests were conducted, it would be expected that the metalcutting properties of such a ceramic would be good since the ⁇ ' -SiAlON phase is about thirty percent harder than the ⁇ * -SiAlON phase.
- the use of the continuous process essentially eliminates the presence of a surface reaction layer on the surface of the sintered compact .
- the absence of the surface reaction layer eliminates a grinding step from the overall processing of the ceramic. This, of course, saves time and money in the manufacture of the ceramic.
- Even if there is some surface reaction layer, in the continuous process the depth of the surface reaction layer is much less than in the batch-processed sintered compacts.
- a thinner surface reaction layer requires less grinding than for the batch-processed sintered compact, and hence, also saves time and money in the manufacturing process .
- the use of the continuous process provides for a sintered compact which does not require any, or as much, grinding to achieve an acceptable surface appearance so that such a continuous process saves time and money over the batch- processing of the ceramic parts.
- the use of a continuous process also allows the green compacts to remain in the same container for both the delubing process and the continuous sintering process. By the green compacts remaining in the same container, there is a cost savings associated with eliminating the need to transfer the delubed-green compacts into a container for processing.
- Testing of continuous-processed cutting inserts against batch-processed cutting inserts show that the continuously-processed cutting inserts exhibit comparable or in some cases improved physical properties to the batch-processed cutting inserts. Testing also shows that the continuously-processed cutting inserts show improved performance properties in some applications as compared to batch-processed cutting inserts. Overall, applicant has provided a process which provides for cost and labor savings thereby making the manufacturing process for efficient and profitable.
- Applicant has also provided a process, i.e., the continuous process, which produces a ceramic part (e.g., cutting insert and sintered compact) with improved or comparable physical properties, as well as improved or comparable performance properties, with respect to batch-processed ceramic parts (e.g., cutting inserts and sintered compacts) .
- a ceramic part e.g., cutting insert and sintered compact
- improved or comparable physical properties as well as improved or comparable performance properties
- the continuous process would appear to have application to the manufacture of ceramics (and sintered compacts) wherein the ceramic materials include, in addition to SiAlON-based materials and silicon nitride-based materials, alumina, alumina-based ceramics (e.g., alumina+ti anium carbide, alumina+zirconia, alumina+zirconia+silicon carbide whisker, and alumina+silicon carbide whiskers) , zirconia, zirconia-based ceramics, titanium carbide- based ceramics, titanium nitride-based ceramics, titanium carbonitride-based ceramics, (e.g., titanium carbonitride+silicon carbide whiskers ⁇ alumina) , titanium boride-based ceramics, hafnium boride-based ceramics, zirconium boride-based ceramics and the like.
- the ceramic materials include, in addition to SiAlON-based materials and silicon nitride-based materials, alumina,
- the silicon nitride-based materials may include a ceramic with a starting powder composition of silicon nitride (e.g., 98.0 weight percent), small amounts (e.g., 1.0 weight percent) of magnesia, small amounts (e.g., 1.0 weight percent) of yttria, and their equivalents as described in U.S. Patent No. 5,525,134.
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Abstract
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JP2000559063A JP4619534B2 (en) | 1998-07-09 | 1999-06-23 | Process for ceramic and its continuous sintering |
EP99937177A EP1109757B1 (en) | 1998-07-09 | 1999-06-23 | Ceramic and process for the continuous sintering thereof |
DE69920239T DE69920239T2 (en) | 1998-07-09 | 1999-06-23 | CERAMICS AND METHOD FOR THE CONTINUOUS SINTERING THEREOF |
DE1109757T DE1109757T1 (en) | 1998-07-09 | 1999-06-23 | CERAMICS AND METHOD FOR CONTINUOUSLY SINTERING THE SAME |
CA002334547A CA2334547C (en) | 1998-07-09 | 1999-06-23 | Ceramic and process for the continuous sintering thereof |
IL14069399A IL140693A (en) | 1998-07-09 | 1999-06-23 | Continuous process for the manufacture of a ceramic sintered compact and ceramic cutting inserts produced thereby |
BR9912232-4A BR9912232A (en) | 1998-07-09 | 1999-06-23 | Ceramics and continuous sintering process |
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- 1999-06-23 IL IL14069399A patent/IL140693A/en not_active IP Right Cessation
- 1999-06-23 KR KR1020007014508A patent/KR100586829B1/en not_active IP Right Cessation
- 1999-06-23 DE DE69920239T patent/DE69920239T2/en not_active Expired - Lifetime
- 1999-06-23 DE DE1109757T patent/DE1109757T1/en active Pending
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Cited By (12)
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WO2002044104A3 (en) * | 2000-11-28 | 2003-09-25 | Kennametal Inc | Sialon containing ytterbium and method of making |
US6693054B1 (en) | 2000-11-28 | 2004-02-17 | Kennametal Inc. | Method of making SiAlON containing ytterbium |
US6964933B2 (en) | 2000-11-28 | 2005-11-15 | Kennametal Inc. | SiAlON containing ytterbium and method of making |
US7049256B2 (en) | 2000-11-28 | 2006-05-23 | Kennametal Inc. | SiAlON containing ytterbium and method of making |
US7094717B2 (en) | 2000-11-28 | 2006-08-22 | Kennametal Inc. | SiAlON containing ytterbium and method of making |
KR100822896B1 (en) * | 2000-11-28 | 2008-04-16 | 케나메탈 아이엔씨. | SiAlON containing ytterbium and method of making |
EP1656331A1 (en) * | 2003-08-07 | 2006-05-17 | Ceramtec AG Innovative Ceramic Engineering | Material based on sialon's |
DE102004035364B4 (en) * | 2003-08-07 | 2019-03-14 | Ceramtec Gmbh | Material based on SiAIONes |
US7223709B2 (en) | 2005-02-09 | 2007-05-29 | Kennametal Inc. | Method of making a SiAION ceramic |
US7309673B2 (en) | 2005-02-09 | 2007-12-18 | Kennametal Inc. | SiAlON ceramic and method of making the same |
US9637417B2 (en) * | 2006-12-06 | 2017-05-02 | Ceramtec Gmbh | Material based on SiAlONs |
EP2692711A1 (en) * | 2012-08-02 | 2014-02-05 | MDA Ileri Teknoloji Seramikleri Sanayi Ticaret Ltd. STi. | SiAlON ceramics |
Also Published As
Publication number | Publication date |
---|---|
IL140693A (en) | 2005-12-18 |
JP2002520244A (en) | 2002-07-09 |
DE1109757T1 (en) | 2001-12-20 |
EP1109757A2 (en) | 2001-06-27 |
WO2000002829A3 (en) | 2000-08-17 |
US6471734B1 (en) | 2002-10-29 |
CA2334547C (en) | 2008-05-20 |
JP4619534B2 (en) | 2011-01-26 |
CA2334547A1 (en) | 2000-01-20 |
WO2000002829B1 (en) | 2000-10-05 |
EP1496032A1 (en) | 2005-01-12 |
DE69920239D1 (en) | 2004-10-21 |
KR20010043986A (en) | 2001-05-25 |
BR9912232A (en) | 2001-05-02 |
IL140693A0 (en) | 2002-02-10 |
KR100586829B1 (en) | 2006-06-08 |
DE69920239T2 (en) | 2005-11-10 |
EP1109757B1 (en) | 2004-09-15 |
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