WO1999066531A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- WO1999066531A1 WO1999066531A1 PCT/GB1999/001913 GB9901913W WO9966531A1 WO 1999066531 A1 WO1999066531 A1 WO 1999066531A1 GB 9901913 W GB9901913 W GB 9901913W WO 9966531 A1 WO9966531 A1 WO 9966531A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing apparatus
- plasma processing
- plasma
- shield member
- conducting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Definitions
- This invention relates to a plasma processing apparatus, particularly one in which sputtering from a dielectric material forming part of the apparatus is reduced.
- Inductively coupled plasma sources require an antenna to couple the RF power into the plasma.
- This antenna can either be within the chamber in which the plasma is struck (in which case it is provided with an insulated coating or other shielding) , or more usually is located outside of the chamber close to a dielectric window.
- the insulator is required to prevent direct electrical contact between the antenna and the plasma.
- the purpose of the plasma processing apparatus is to etch the workpiece or deposit specific material on the workpiece in a controlled fashion. If material is sputtered from the dielectric window, it will interfere with the required process, leading to poor quality product or even completely unacceptable results.
- the present invention reduces the effect of dielectric sputtering.
- the conducting portion acts to screen the plasma from the large electric fields which may be created by the antenna, which would otherwise capacitively couple RF power into the plasma and create large ion accelerating potentials between the plasma and the dielectric portion.
- the conducting portion may be grounded, allowed to float electrically, or biased to an appropriate DC potential with respect to the chamber wall. In the latter case, the DC potential may be pulsed or continuous.
- the shield member has a plurality of apertures therein. These apertures may take any appropriate form and examples are discussed below.
- the spacing between the shield member and the dielectric portion may be preset or, alternatively, may be adjustable.
- the shield member may comprise a first portion formed of a conducting material and a second portion formed of a conducting or non-conducting material.
- the first and second portions may have apertures therein and may be staggered such that there is no direct line of sight between the dielectric portion and the plasma.
- the conducting materials of the first and second portions may overlap, but must not complete a circuit into which appreciable amounts of RF power can be inductively coupled.
- the second portion is formed of a conducting material, it preferably acts in a similar fashion to the first portion, reducing direct capacitive coupling of power from the antenna to the plasma.
- the second portion may be of a similar shape to the first portion, with a suitable change in size, if necessary. However, this is not essential, particularly where the second portion is non-conducting.
- the shield member may be heated to reduce deposition or residue build up on it during processing. Either or both portions of the shield member may be heated. This may be achieved by a number of techniques. For example, either or both portions of the shield member (the first shield portion only if the second shield portion is formed from insulating material) may be designed so that part of it forms a closed loop into which RF power may be inductively coupled. RF power coupled into the portion of the shield member will cause localised heating, with this heat conducted to the rest of that portion of the shield member. The RF power utilised may be a proportion of that available from the process antenna. As such the power coupled into the plasma will be reduced, and the power coupled into the portion of the shield member will increase proportionate to the process power requested.
- the shield member comprises protruding fingers, adjacent fingers joined together at one or both ends.
- a slotted structure is formed.
- the fingers may point substantially towards the centre of the circle.
- Adjacent fingers may be joined at the centre of the circle by a disc.
- the fingers may be joined at alternate ends.
- the shield member comprises a first portion and a second portion
- the second portion may take a form similar to the first portion, but may be rotated relative thereto such that there is no direct line of sight between the dielectric portion and the plasma, or may be substantially a negative image of the first (with respect to the dielectric shape) achieving the same effects.
- Such an embodiment has been found to be particularly suitable for use with a flat antenna.
- a cross section of the shield member is in the form of a trough which at least partially surrounds a corresponding shaped dielectric portion.
- the shield member may be annular.
- the shield member is particularly for use in the plasma processing apparatus described above and may have the preferred or alternative features mentioned above.
- the first and second portions may have apertures therein and may be arranged such that there is no direct line of sight through the shield member, for example when positioned in the plasma processing apparatus between the dielectric portion and the plasma.
- Figure 1 is a plan view from the vacuum side in a chamber of a dielectric window in one embodiment of the invention
- the fingers may extend to almost reach the centre of the circle leaving a very small aperture, or the fingers could be joined at both ends, or the fingers could be alternately joined at the outer and inner ends.
- either the first shield portion 2 or the second shield portion 4 can be formed of fingers 3 extending outward from a central region thereof towards the periphery.
- the other of the shield portions is in the form shown in Figures 1 and 2, such an embodiment prevents a "visible" path between the dielectric window and the plasma even in the central region of the shield assembly.
- the second shield portion 4 is conducting, then the fingers thereof must not make electrical contact with the fingers of the first shield portion 2, otherwise a path may be formed in to which RF power may be inductively coupled and dissipated.
- the second shield portion 4 is nonconducting, it may or may not be of a similar shape to the first shield portion 2, since even if it formed a continuous ring, RF power would not be inductively coupled into it.
- the second shield portion 4 If the second shield portion 4 is conducting, it will act in a similar fashion to the first shield portion 2, reducing direct capacitive coupling of power from the antenna to the plasma.
- the first shield portion 2 and second shield portion 4 have finite thickness which means that the plasma is separated from the antenna by a total distance made up of the thickness of the dielectric window 5, the thickness of both the first and second shield portions 2, 4, and the spacing between the shield portions 2 and 4 and between the first shield portion 2 and the window 5. If this total thickness is great, then the inductive coupling of RF power into the plasma will reduce in efficiency. However, if the spacing between the shield portions 2 and 4 and the antenna 6 is small, the capacitive coupling between the antenna and the shields will increase, leading to RF power dissipation.
- Figures 3 and 4 there is shown an alternative arrangement of a shield assembly, dielectric window and antenna.
- the first shield portion 16 is in the form of a conducting annular construction.
- the spacing between the first shield portion 16 and the dielectric window 14 may be preset, or adjustable, and this is true of any embodiment of the present invention.
- the first shield portion 16 has slots 18 cut therein, preferably perpendicular to the local axis of antenna 13.
- the second shield portion 17 has the same profile as the first shield portion 16, but is of suitably larger dimensions to allow it to be located at a slightly larger distance from antenna 13 than the first shield portion 16.
- the second shield portion 17 has slots 19 therein which are similar to slots 18 of the first shield portion 16, but are moved relative thereto so that the slots 18 and 19 are staggered.
- the antenna is shown as a single turn coil, but this is not intended to preclude the use of multiple turns adjacent to either or both of the sides and bottom of the dielectric window 14.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000555274A JP2002518165A (en) | 1998-06-16 | 1999-06-16 | Plasma processing equipment |
KR1020007001570A KR20010022962A (en) | 1998-06-16 | 1999-06-16 | Plasma processing apparatus |
EP99926627A EP1004136A1 (en) | 1998-06-16 | 1999-06-16 | Plasma processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9812852.3A GB9812852D0 (en) | 1998-06-16 | 1998-06-16 | Plasma processing apparatus |
GB9812852.3 | 1998-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999066531A1 true WO1999066531A1 (en) | 1999-12-23 |
Family
ID=10833772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1999/001913 WO1999066531A1 (en) | 1998-06-16 | 1999-06-16 | Plasma processing apparatus |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1004136A1 (en) |
JP (1) | JP2002518165A (en) |
KR (1) | KR20010022962A (en) |
GB (1) | GB9812852D0 (en) |
WO (1) | WO1999066531A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1322167C (en) * | 2004-11-05 | 2007-06-20 | 哈尔滨工业大学 | Composite plasma surface treatment apparatus |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100481313B1 (en) * | 2001-11-09 | 2005-04-07 | 최대규 | Inductively coupled plasma source |
JP5701050B2 (en) * | 2010-12-24 | 2015-04-15 | キヤノンアネルバ株式会社 | Plasma processing equipment |
GB201502453D0 (en) * | 2015-02-13 | 2015-04-01 | Spts Technologies Ltd | Plasma producing apparatus |
JP7302338B2 (en) * | 2019-07-01 | 2023-07-04 | 日新電機株式会社 | Plasma processing equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148472A (en) * | 1994-11-15 | 1996-06-07 | Aneruba Kk | Plasma processing device |
EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
EP0801413A1 (en) * | 1996-03-12 | 1997-10-15 | Varian Associates, Inc. | Inductively coupled plasma reactor with faraday-sputter shield |
EP0908921A1 (en) * | 1997-10-10 | 1999-04-14 | European Community | Process chamber for plasma enhanced chemical vapour deposition and apparatus employing said process chamber |
-
1998
- 1998-06-16 GB GBGB9812852.3A patent/GB9812852D0/en not_active Ceased
-
1999
- 1999-06-16 JP JP2000555274A patent/JP2002518165A/en active Pending
- 1999-06-16 WO PCT/GB1999/001913 patent/WO1999066531A1/en not_active Application Discontinuation
- 1999-06-16 EP EP99926627A patent/EP1004136A1/en not_active Withdrawn
- 1999-06-16 KR KR1020007001570A patent/KR20010022962A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08148472A (en) * | 1994-11-15 | 1996-06-07 | Aneruba Kk | Plasma processing device |
EP0782172A2 (en) * | 1995-11-27 | 1997-07-02 | Applied Materials, Inc. | Plasma processing systems |
EP0801413A1 (en) * | 1996-03-12 | 1997-10-15 | Varian Associates, Inc. | Inductively coupled plasma reactor with faraday-sputter shield |
EP0908921A1 (en) * | 1997-10-10 | 1999-04-14 | European Community | Process chamber for plasma enhanced chemical vapour deposition and apparatus employing said process chamber |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 096, no. 010 31 October 1996 (1996-10-31) * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1322167C (en) * | 2004-11-05 | 2007-06-20 | 哈尔滨工业大学 | Composite plasma surface treatment apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR20010022962A (en) | 2001-03-26 |
JP2002518165A (en) | 2002-06-25 |
GB9812852D0 (en) | 1998-08-12 |
EP1004136A1 (en) | 2000-05-31 |
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