WO1999062192A1

WO1999062192A1 - System and method for implementing a hybrid waveguide device

Info

Publication number: WO1999062192A1
Application number: PCT/US1999/010563
Authority: WO
Inventors: Oleksandr Chenakin; David Lee Brubaker; Anthony David Williams
Original assignee: Celeritek, Inc.
Priority date: 1998-05-22
Filing date: 1999-05-13
Publication date: 1999-12-02
Also published as: AU3987899A

Abstract

A system and method for implementing a hybrid waveguide device (210) for use with electronic telecommunication equipment comprises a waveguide device for propagating electrical signals, a vane assembly (222) mounted within the waveguide device (210) for manipulating and directing the signals, and an electrical circuit mounted on the vane assembly for receiving and processing the signals, and then transmitting the signals down the waveguide.

Description

SYSTEM AND METHOD FOR IMPLEMENTING A HYBRID WAVEGUIDE DEVICE

BACKGROUND OF THE INVENTION 1. Field of the Invention

This invention relates generally to waveguide transmission lines for electronic telecommunication devices, and relates more particularly to a system and method for implementing a hybrid waveguide device for use with electronic telecommunication equipment.

2. Description of the Background Art

Development of efficient and economical techniques for propagating electromagnetic waves is a significant consideration for designers, manufacturers and users of electronic telecommunications equipment. Systems that operate using radio frequency signals frequently utilize waveguide transmission lines to propagate electromagnetic waves between various portions of the telecommunication systems. For example, a waveguide may be used to effectively couple radio frequency signals between a transceiver device and an antenna device within a satellite telecommunication system.

Referring now to FIG. 1(a), a perspective end view of one embodiment for a basic waveguide 90 is shown. In the FIG. 1(a) embodiment, waveguide 90 is typically formed of metal and includes a top 112, a right side 114, a left side 116, a bottom 118, a first end 120, and a second end (not shown). Waveguide 90 therefore forms a metal structure that contains an empty cavity typically filled with a dielectric substance such as air.

Referring now to FIG 1(b), an elevation end view of one embodiment for the basic waveguide 90 of FIG. 1(a) is shown. In one of the most common modes of propagation, electric fields 122 are formed within waveguide 90. The electric fields 122 are typically strongest at the center of waveguide 90 and decrease to zero at the walls of waveguide 90. Similarly, magnetic fields (not shown) corresponding to electric fields 122 also exist within waveguide 90. Due to the electric fields 122 and the corresponding magnetic fields, electromagnetic waves may thus be propagated through waveguide 90 to various portions of an electronic telecommunication system.

Referring now to FIG. 1 (c), an elevation end view of one embodiment for a double-ridge waveguide 94 is shown. In FIG. 1 (c), double-ridge waveguide 94 includes adjacent upper ridge 124 and lower ridge 128 which directly oppose each other. Between upper ridge 124 and lower ridge 128, electric fields 126 and corresponding magnetic fields (not shown) are developed. The electric fields 126 in double-ridge waveguide 94 are intensified (volts per meter) due to the reduced distance between upper ridge 124 and lower ridge 128.

Referring now to FIG. 1(d), a cross-sectional side view of one embodiment for a conventional waveguide signal-processing transition is shown. In FIG. 1(d), a signal in 130 is injected into waveguide 90 and coupled through post 132 into a processing circuit 134. After processing, the processed signal is coupled back into waveguide 90 through post 136 as signal out 138.

Processing circuit 134 is typically implemented using semiconductor integrated circuits and micro-stripline techniques on either hard or soft substrates. As illustrated in FIG. 1(d), a transition occurs between waveguide 90 and processing circuit 134. This transition introduces signal loss into the input and output circuits of a radio transceiver that incorporates waveguide 90. The foregoing signal loss produces a substantial increase in the receiver noise levels, and also results in a significant waste of transmitter power.

Some waveguide designs have attempted to compensate for the transition problem discussed above in conjunction with FIG. 1(d). However, due to complicated fabrication requirements and other factors, none of the conventional waveguide designs is well suited to high-volume manufacturing. Since manufacturing costs may directly affect the feasibility of producing waveguides for certain low-cost applications, a more efficient waveguide design is required to improve both the functionality and the manufacture of waveguides.

Therefore, for all the foregoing reasons, an improved system and method are needed to successfully implement a hybrid waveguide device for use with electronic telecommunication equipment, in accordance with the present invention.

SUMMARY OF THE INVENTION In accordance with the present invention, a system and method are disclosed for implementing a hybrid waveguide device for use with electronic telecommunication equipment. The invention includes a waveguide that contains at least one metal vane that is preferably longitudinally and centrally mounted within the waveguide. In one embodiment, the vane includes an input slit for receiving electromagnetic waves propagated through the waveguide, and also includes an output slit for propagating electromagnetic waves further down the waveguide. The vane preferably includes a series of opposing steps or tapers that lead towards the input slit, and another series of opposing steps that lead away from the output slit. In most embodiments, the vane is shaped to produce input and output impedance matching transformers for selected electrical components that are mounted on the vane to process the propagated electromagnetic waves, in accordance with the present invention. The impedance of the vane and any mounted components is also matched to the impedance of the waveguide by use of the steps or tapers (stepped or tapered impedance matching transformers) that are cut into the vane. In the preferred embodiment, the vane is manufactured using a wire electric discharge machining (EDM) technique that permits many vanes to be machined simultaneously to significantly reduce production costs. In other embodiments, the vane may readily be manufactured using a variety of other appropriate techniques (for example, stamping or metal etching techniques) .

In one embodiment, a transistor is directly mounted to the surface of the vane to implement a low-noise amplifier. The transistor is preferably a gallium arsenide field effect transistor, however, in alternate embodiments, the low-noise amplifier may utilize various other electrical components. As described above, the vane is preferably shaped to produce input (gate) and output (drain) impedance matching transformers for the transistor. The combined impedance of the transistor and the vane is also preferably matched to the impedance of the waveguide by the steps or notches cut into the vane to produce the stepped impedance matching transformers. The low-noise amplifier also includes an input capacitor, and an output capacitor, which are preferably constructed using a depositing technique discussed above in conjunction with FIG. 3. In accordance with the invention, an input coupling wire is bonded between the gate of the transistor and a first terminal of the input capacitor. The input coupling wire thus passes directly across the input slit of the vane, but does not come into direct contact with the vane. In the preferred embodiment, the input coupling wire is orthogonal to the input slit, and is therefore perpendicular to an electromagnetic wave propagated through the hybrid waveguide. A gate bias wire is then bonded to the second terminal of the input capacitor to supply a gate bias voltage to control the transistor.

Similarly, an output coupling wire is bonded between the drain of the transistor and a first terminal of the output capacitor. The output coupling wire thus passes directly across the output slit of the vane, but does not come into direct contact with the vane. In the preferred embodiment, the output coupling wire is orthogonal to the output slit, and is therefore perpendicular to an electromagnetic wave propagated from the hybrid waveguide. A drain bias wire is then bonded to the second terminal of the output capacitor to supply a drain bias voltage to control the transistor. In operation, the hybrid waveguide propagates an electromagnetic wave into the input slit of the vane. The electromagnetic wave responsively generates an electric field across the input coupling wire, and also generates a corresponding perpendicular magnetic field surrounding the input coupling wire. Electrical energy is thus coupled into the input coupling wire, thereby causing current to flow through the input coupling wire into the transistor. The input coupling wire and the input slit therefore produce the equivalent circuit of a transformer device, and operate to effectively couple the electromagnetic wave into the low-noise amplifier.

A similar (but reversed) process occurs when the transistor generates a low-noise ouput signal onto the output coupling wire. In practice, electrical energy from the transistor is coupled from the output coupling wire into the output slit to produce an electromagnetic wave that is then further propagated down the hybrid waveguide. The low-noise amplifier therefore efficiently avoids conventional signal transition losses and thus effectively achieves low noise amplification of the propagated electromagnetic waves.

Other embodiments of the present invention may include, but are not limited to, a mixer device, a multiplier device, a filter device, a switching device, an integrated circuit power amplifier, and a radio frequency receiver device. The present invention therefore more efficiently and effectively implements a hybrid waveguide device for use with electronic telecommunication equipment.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1(a) is a perspective end view of one embodiment for a basic waveguide;

FIG 1 (b) is an elevation end view of one embodiment for the basic waveguide of FIG. 1(a).

FIG. 1 (c) is an elevation end view of one embodiment for a double- ridge waveguide;

FIG. 1 (d) is a cross-sectional side view of one embodiment for a conventional waveguide signal processing transition; FIG. 2(a) is a cross-sectional side view of one embodiment for a waveguide stepped-impedance transformer, according to the present invention;

FIG. 2(b) is a cross-sectional side view of one embodiment for a vane mounted within a waveguide, according to the present invention; FIG. 3 is a perspective end view of one embodiment for a hybrid waveguide including a low-noise amplifier, according to the present invention;

FIG. 4 is a cross-sectional side view of the hybrid waveguide of FIG. 3, according to the present invention; FIG. 5 is a cross section side view of one embodiment for a hybrid waveguide including a mixer device, according to the present invention; FIG. 6 is a cross section side view of one embodiment for a hybrid waveguide including a multiplier device, according to the present invention; FIG. 7 is a cross section side view of one embodiment for a hybrid waveguide including a filter device, according to the present invention; FIG. 8 is a cross section side view of one embodiment for a hybrid waveguide including a switching device, according to the present invention;

FIG. 9 is a cross section side view of one embodiment for a hybrid waveguide including an integrated circuit power amplifier, according to the present invention;

FIG. 10 is a cross section side view of one embodiment for a hybrid waveguide including a receiver assembly, according to the present invention; and FIG. 11 is a flowchart of one embodiment of method steps for implementing the hybrid waveguide device of FIG. 4, according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT The present invention relates to an improvement in electronic telecommunication equipment. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements.

Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein. The present invention includes a system and method for implementing a hybrid waveguide device for use with electronic telecommunication equipment. The invention includes a waveguide device for propagating electrical signals, a vane assembly mounted within the waveguide device for manipulating and directing the signals, and an electrical circuit mounted on the vane assembly for receiving and processing the signals, and then transmitting the signals down the waveguide.

Referring now to FIG. 2(a), a cross-sectional side view of one embodiment for a waveguide 110 is shown, including a stepped-impedance transformer, according to the present invention. The stepped impedance transformer of FIG. 2(a) includes an upper vane 212 and a lower vane 214 that are coplanar and longitudinally mounted within waveguide 110. In the FIG. 2(a) embodiment, upper vane 212 and lower vane 214 are preferably formed of a metal substance. Upper vane 212 and lower vane 214 are also each preferably grounded by being conductively connected to the upper and lower walls of metal waveguide 110.

According to the present invention, a signal in 130 is injected into waveguide 110 and propagated through a narrow channel between upper vane 212 and lower vane 214 to product a signal out 138. As illustrated in FIG. 2(a), upper vane 212 and lower vane 214 form a series of opposing steps or tapers which operate to progressively concentrate electric fields leading up to the narrow channel (in which the electric fields reach a maximum value). Another series of opposing steps progressively reduce the electric fields leading away from the narrow channel between upper vane 212 and lower vane 214. In accordance with the present invention, various vane assemblies may thus be advantageously shaped to form stepped or tapered impedance matching transformers that function depending upon the vane configuration selected and the application intended for waveguide 110.

Referring now to FIG. 2(b), a cross-sectional side view of one embodiment for a waveguide 110 is shown, including a vane 222, according to the present invention. In FIG. 2(b), coplanar vane 222 is preferably longitudinally and centrally mounted within waveguide 1 10, as subsequently illustrated in FIG. 3. In the FIG. 2(b) embodiment, vane 222 is preferably formed of a metal substance. In other embodiments, vane 222 may readily be formed of other appropriate substances and may be implemented in various other physical dimensions. Vane 222 is also preferably electrically grounded by being conductively connected to the upper and lower walls of metal waveguide 110. In the FIG. 2(b) embodiment, vane 222 includes an input slit 224 for receiving electromagnetic waves propagated through waveguide 110, and also includes an output slit 226 for propagating electromagnetic waves further down waveguide 110, as further discussed below in conjunction with FIGS. 3 through 11. As illustrated in FIG. 2(b), vane 222 preferably includes a series of opposing steps that lead towards input slit 224, and another series of opposing steps that lead away from output slit 226. In the FIG. 2(b) embodiment, vane 222 is specifically shaped to produce input and output impedance matching transformers for selected electrical components (not shown) mounted on vane 222 to process the propagated electromagnetic waves, in accordance with the present invention. The combined impedance of vane 222 and any mounted components is also matched to the impedance of waveguide 110 by use of the steps or tapers (stepped or tapered impedance matching transformers) that are cut into vane 222.

In the preferred embodiment, vane 222 is manufactured using a wire electric discharge machining (EDM) technique that permits many vanes to be machined simultaneously to significantly reduce production costs. In other embodiments, vane 222 may readily be manufactured using a variety of other appropriate techniques (for example, stamping or metal etching techniques) .

Referring now to FIG. 3, a perspective end view of one embodiment for a hybrid waveguide 210 is shown, including a low-noise amplifier, according to the present invention. In the FIG. 3 embodiment, the vane 222 of FIG. 2(b) is centrally and vertically mounted into basic waveguide 110. In other embodiments, vane 222 may be implemented using various other techniques, depending upon the intended application. For example, vane 222 may be constructed in various alternate physical configurations, or may be mounted into other locations (e.g., horizontally) within basic waveguide 110.

In accordance with the present invention, a transistor 310 is mounted directly to vane 222 to facilitate heat dissipation and increase the thermal efficiency of hybrid waveguide 210. The sides of vane 222 may be selectively coated with dielectric material (as illustrated by dielectric layer 312). Dielectric layer 312 may then be coated with a metal film (as illustrated by metal layer 314) to efficiently produce capacitor devices. This manufacturing technique thereby facilitates the fabrication of lumped and distributed reactive and resistive circuit elements for decoupling, matching, and various other purposes. Also, the depositing technique may be further developed to include active discrete semiconductor devices and monolithic integrated circuits. In alternate embodiments, capacitor devices implemented using a conventional chip and wire configuration may also be directly mounted to the surface of vane 222. The design and operation of the low-noise amplifier of hybrid waveguide 210 is further discussed below, in conjunction with FIGS. 4 and 11. Referring now to FIG. 4, a cross-sectional side view of the FIG. 3 hybrid waveguide 210 is shown, including low-noise amplifier 408, according to the present invention. As discussed in conjunction with FIGS. 2(b) and 3, vane 222 is mounted within basic waveguide 110, and includes an input slit 224 and an output slit 226.

In the FIG. 4 embodiment, a transistor 310 is directly mounted to the surface of vane 222. In the preferred embodiment, transistor 310 is a gallium arsenide field effect transistor, however, in alternate embodiments, low-noise amplifier 408 may readily utilize various other electrical components. In the FIG. 4 embodiment, vane 222 is preferably shaped to produce input (gate) and output (drain) impedance matching transformers for transistor 310. The combined impedance of low-noise amplifier 408 (transistor 310 and vane 222) is also preferably matched to the impedance of basic waveguide 110 by the steps or notches cut into vane 222 to produce stepped impedance matching transformers, as discussed above in conjunction with FIGS. 2(a) and 2(b).

Low-noise amplifier 408 also includes deposited input bypass capacitor 410, and deposited output bypass capacitor 412, which are preferably constructed using the depositing technique discussed above in conjunction with FIG. 3. In alternate embodiments, capacitors 410 and 412 may be implemented as discrete components (for example chip and wire components) mounted directly to vane 222.

In accordance with the invention, an input coupling wire 416 is bonded between the gate of transistor 310 and a first terminal of input capacitor 410. Input coupling wire 416 thus passes directly across input slit 224 of vane 222, but does not come into direct contact with vane 222. In the preferred embodiment, input coupling wire 416 is orthogonal to input slit 224, and is therefore perpendicular to an electromagnetic wave propagated through hybrid waveguide 210 (signal in 130). In other embodiments, input coupling wire 416 may be positioned at various other angles relative to input slit 224. A gate bias wire 418 is then bonded to the second terminal of input capacitor 410 to supply a gate bias voltage to control transistor 310. Similarly, an output coupling wire 418 is bonded between the drain of transistor 310 and a first terminal of output capacitor 412. Output coupling wire 418 thus passes directly across output slit 226 of vane 222, but does not come into direct contact with vane 222. In the preferred embodiment, output coupling wire 418 is orthogonal to output slit 226, and is therefore perpendicular to an electromagnetic wave propagated from hybrid waveguide 210 (signal out 138). In other embodiments, output coupling wire 418 may be positioned at various other angles relative to output slit 226. A drain bias wire 420 is then bonded to the second terminal of output capacitor 412 to supply a drain bias voltage to control transistor 310.

In operation, hybrid waveguide 210 propagates an electromagnetic wave (signal in 130) into input slit 224 of vane 222. Signal in 130 responsively generates an electric field across input coupling wire 416, and also generates a peφendicular magnetic field surrounding input coupling wire 416. Electrical energy is thus coupled into input coupling wire 416, thereby causing current to flow through input coupling wire 416 into transistor 310. Input coupling wire 416 and input slit 224 therefore produce the equivalent circuit of a transformer device and operate to effectively couple signal in 130 into low-noise amplifier 408.

A similar (but reversed) process occurs when transistor 310 generates a low-noise output signal onto output coupling wire 418. In practice, electrical energy from transistor 310 is coupled from output coupling wire 418 into output slit 226 to produce an electromagnetic wave (signal out 138) that is then further propagated down hybrid waveguide 210. The low-noise amplifier 408 of FIGS. 3 and 4 therefore efficiently avoids conventional signal transition losses and thus effectively achieves low noise amplification of the propagated electromagnetic waves.

Referring now to FIG. 5, a cross section side view of one embodiment for a hybrid waveguide 210(a) is shown, including a radio frequency mixer device 510, according to the present invention. The following FIGS. 5 through 10 disclose a series of alternate embodiments for hybrid waveguide 210, in accordance with the present invention. Accordingly, the various embodiments presented in FIGS. 5 through 10 variously incorporate and utilize the same or similar principles as those previously disclosed in conjunction with the foregoing FIGS. 2 through 4. In the FIG. 5 embodiment, a signal in 130 is coupled through input slit 520 and coupling wire 522 into a first input of a mixer 512 that is mounted directly onto vane 222(a). Similarly, a local oscillator (LO) in signal 514 is coupled through input slit 524 and coupling wire 526 into a second input of mixer 512. In response, mixer 512 generates a intermediate frequency (IF) out signal 516 via capacitor 518 to output line 516.

Referring now to FIG. 6, a cross section side view of one embodiment for a hybrid waveguide 210(b) is shown, including a multiplier device 610, according to the present invention. A signal in 630 is preferably injected into a multiplier 612 which has two balanced outputs that are in opposite phase. Vane 222(b) is formed so that the outputs of multiplier 612 are coupled through coupling wires 640 and 644 into respective output slits 642 and 646, and the two outputs thereby launch into waveguide 1 10 in different phase planes to constructively combine the two outputs of multiplier 612 into a single multiplied signal out 638.

Referring now to FIG. 7, a cross section side view of one embodiment for a hybrid waveguide 210(c) is shown, including a filter 710, according to the present invention. In FIG. 7, vane 222(c) is formed to include a series of openings 712. Each of the openings 712 forms a resonator so that only selected resonant frequencies are passed by hybrid waveguide 210(c). A signal in 130 is therefore injected and passes through filter 710 to generate a filtered signal out 138 that contains only the desired frequency components.

Referring now to FIG. 8, a cross section side view of one embodiment for a hybrid waveguide 210(d) is shown, including a switching device 810, according to the present invention. Switching device 810 includes vanes 222(d), 222(e), and 222(f). Switching device 810 further includes two channel-pairs of PIN (P-intrinsic-N) diodes that are connected to respective bypass capacitors 820 and 824 via individual coupling wires. PIN diodes 812 and 814 form one channel-pair for controlling signal out 2 (138(b)), and PIN diodes 816 and 818 form another channel-pair for controlling signal out 1 (138(a)).

PIN diodes contain an intrinsic region between their anode and cathode. With sufficient potential applied across a PIN diode, the PIN diode behaves like a short circuit and effectively reflects all signals. Therefore, when one channel-pair of PIN diodes is turned on and the other channel- pair is turned off, then the propagated wave passes in the direction of the turned on channel-pair.

In operation, an electromagnetic wave (signal input 130) is injected between vanes 222(d) and 222(e). Select lines 822 and 826 may be used to turn on the desired PIN diode channel-pair to effectively switch the injected signal 130 to the desired output channel as either signal out 2 (138(b)), or as signal out 1 (138(a)).

Referring now to FIG. 9, a cross section side view of one embodiment for a hybrid waveguide 210(f) is shown, including an integrated-circuit power amplifier 910, according to the present invention. Power amplifier 910 is preferably a MIMIC (microwave monolithic integrated circuit) which includes many individual electrical components within a single package. In high-power chips, large amounts of heat must be dissipated. Power amplifier 910 is thus mounted directly onto vane 222 to decrease thermal resistance and thereby improve thermal efficiency.

In operation, hybrid waveguide 210(f) propagates an electromagnetic wave (signal in 130) into input slit 920 of vane 222. Electrical energy is thus coupled through input coupling wire 922 into the input of power amplifier 910.

Similarly, when power amplifier 910 generates an amplified ouput signal onto output coupling wire 924, electrical energy from power amplifier 910 is then coupled from output coupling wire 924 into output slit 926 to produce an electromagnetic wave (signal out 138) that is then further propagated down hybrid waveguide 210(f).

Referring now to FIG. 10, a cross section side view of one embodiment for a hybrid waveguide 210(g) is shown, including a receiver assembly 1010, according to the present invention. The FIG. 10 embodiment illustrates how the present invention may advantageously be utilized to efficiently manufacture complete electrical subassemblies on a single prefabricated vane 222(g). The FIG. 10 embodiment combines and incorporates a number of individual circuits that are similar to those previously disclosed as individual embodiments. Specifically, receiver assembly 1010 combines circuits similar to filter 710 of FIG. 7, low-noise amplifier 408 of FIGS. 3 and 4, mixer device 510 of FIG. 5, and multiplier device 610 of FIG. 6. In other embodiments, various other electrical circuits or devices may readily be incorporated into hybrid waveguide 210(g).

In operation, hybrid waveguide 210(g) propagates a signal in 130 through bandpass filter 710 into input slit 224. Low-noise amplifier (LNA) 408 receives the signal and responsively generates an amplified output signal to a first input of mixer 512. Multiplier 612 receives a signal 514 from a local oscillator (LO) and generates a multiplied output signal to a second input of mixer 512. Mixer 512 responsively generates a intermediate frequency (IF) output via line 516, in accordance with the present invention.

Referring now to FIG. 11, a flowchart of one embodiment of method steps for implementing the hybrid waveguide 210 of FIG. 4 is shown, according to the present invention. Initially, in step 1110, a basic waveguide 110 is fabricated as discussed above in conjunction with FIGS. 1(a) and 1(b). Then, in step 1112, a vane 222 is manufactured. As discussed above in conjunction with FIGS. 2(a) and 2(b), vane 222 is preferably mass-produced using a wire electric discharge machining (EDM) technique to minimize waveguide production costs. Furthermore, vane 222 is designed and shaped depending upon the intended purpose of hybrid waveguide 210.

In step 1114, one or more selected electrical components are mounted directly onto vane 222 to enhance heat dissipation and thermal efficiency. For example, in the low-noise amplifier 408 of FIGS. 3 and 4, a gallium arsenide field effect transistor 310 is preferably mounted to vane 222. Next, in step 1116, insulated bypass capacitors 410 and 412 are preferably mounted onto vane 222. In one embodiment, capacitors 410 and 412 are formed on vane 222 by selectively depositing successive layers of dielectric material and metal film, as discussed above in conjunction with FIG. 3.

In step 1118, individual coupling wires are bonded orthagonally across transformer slits 224 and 226 in vane 222. Input coupling wire 416 thus connects the gate of transistor 310 to a first terminal of capacitor 410. The second terminal of capacitor 410 is connected to a gate bias voltage. Similarly, output coupling wire 418 connects the drain of transistor 310 to a first terminal of capacitor 412. The second terminal of capacitor 412 is connected to a drain bias voltage. Then, in step 1120, vane 222 (containing the mounted electrical components) is positioned and mounted within basic waveguide 1 10 to form hybrid waveguide 210, in accordance with the present invention. Finally, in step 1122, electromagnetic waves are propagated through hybrid waveguide 210 for processing by low-noise amplifier 408.

The invention has been explained above with reference to a preferred embodiment. Other embodiments will be apparent to those skilled in the art in light of this disclosure. For example, the present invention may readily be implemented using configurations other than those described in the preferred embodiment above. Additionally, the present invention may effectively be used in conjunction with systems other than the one described above as the preferred embodiment. Therefore, these and other variations upon the preferred embodiments are intended to be covered by the present invention, which is limited only by the appended claims.

Claims

WHAT IS CLAIMED IS:

1. A system for manipulating electrical signals, comprising: a guide device for containing said electrical signals; a vane assembly mounted within said guide device for receiving said electrical signals; and an electrical circuit mounted on said vane assembly for processing said electrical signals.

2. The system of claim 1 wherein said guide device is a hybrid waveguide in an electrical telecommunication system.

3. The system of claim 1 wherein said electrical signals are electromagnetic radio frequency signals.

4. The system of claim 1 wherein said electrical circuit is a low-noise amplifier.

5. The system of claim 1 wherein said electrical circuit is a multiplier device.

6. The system of claim 1 wherein said electrical circuit is a mixer device.

7. The system of claim 1 wherein said electrical circuit is a filter device.

8. The system of claim 1 wherein said electrical circuit is a radio frequency switching device.

9. The system of claim 1 wherein said electrical circuit is a microwave monolithic integrated circuit.

10. The system of claim 1 wherein said electrical circuit is a radio frequency receiver assembly including a filter, a low-noise amplifier, a mixer, and a multiplier.

11. The system of claim 1 wherein said vane assembly is formed of metal having a thickness of less than 0.05 inches.

12. The system of claim 1 wherein said vane assembly is centrally mounted within said guide device, and wherein said vane assembly is conductively coupled to said guide device.

13. The system of claim 1 wherein said vane assembly forms impedance matching transformers for said electrical circuit.

14. The system of claim 1 wherein said vane assembly is mass-produced using a wire electric discharge machining, stamping, or etching technique.

15. The system of claim 1 wherein said vane assembly includes slits for receiving and propagating said electrical signals.

16. The system of claim 1 wherein said electrical circuit includes an electrical component mounted directly onto said vane assembly to improve heat dissipation.

17. The system of claim 1 wherein said electrical circuit includes devices deposited onto said vane assembly.

18. The system of claim 16 wherein said electrical circuit includes an input coupling wire for coupling said electrical signals into said electrical component.

19. The system of claim 16 wherein said electrical circuit includes an output coupling wire for coupling said electrical signals out of said electrical component.

20. The system of claim 15 wherein coupling wires are orthagonally positioned across said slits and attached to said electrical circuit for receiving and propagating said electrical signals.

21. A method for manipulating electrical signals, comprising the steps of: containing said electrical signals within a guide device; receiving said electrical signals with a vane assembly mounted within said guide device; and processing said electrical signals with an electrical circuit mounted on said vane assembly.

22. The method of claim 21 wherein said guide device is a hybrid waveguide in an electrical telecommunication system.

23. The method of claim 21 wherein said electrical signals are electromagnetic radio frequency signals.

24. The method of claim 21 wherein said electrical circuit is a low-noise amplifier.

25. The method of claim 21 wherein said electrical circuit is a multiplier device.

26. The method of claim 21 wherein said electrical circuit is a mixer device.

27. The method of claim 21 wherein said electrical circuit is a filter device.

28. The method of claim 21 wherein said electrical circuit is a radio frequency switching device.

29. The method of claim 21 wherein said electrical circuit is a mounted or deposited microwave monolithic integrated circuit.

30. The method of claim 21 wherein said electrical circuit is a radio frequency receiver assembly including a filter, a low-noise amplifier, a mixer, and a multiplier.

31. The method of claim 21 wherein said vane assembly is formed of conductive material or dielectric material.

32. The method of claim 21 wherein said vane assembly is mounted within said guide device, and wherein said vane assembly is conductively coupled to said guide device.

33. The method of claim 21 wherein said vane assembly forms impedance matching transformers for said electrical circuit.

34. The method of claim 21 wherein said vane assembly is mass- produced using a wire electric discharge machining, stamping or etching technique.

35. The method of claim 21 wherein said vane assembly includes slits for receiving and propagating said electrical signals.

36. The method of claim 21 wherein said electrical circuit includes an electrical component mounted directly onto said vane assembly to improve heat dissipation.

37. The method of claim 21 wherein said electrical circuit is deposited onto said vane assembly.

38. The method of claim 36 wherein said electrical circuit includes an input coupling wire for coupling said electrical signals into said electrical component.

39. The method of claim 36 wherein said electrical circuit includes an output coupling wire for coupling said electrical signals out of said electrical component.

40. The method of claim 55 wherein coupling wires are orthagonally positioned across said slits and attached to said electrical circuit for receiving and propagating said electrical signals.

41. A system for manipulating electrical signals, comprising: means for containing said electrical signals; means for receiving said electrical signals; and means for processing said electrical signals.