WO1999060613A3 - Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system - Google Patents

Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system Download PDF

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Publication number
WO1999060613A3
WO1999060613A3 PCT/US1999/011303 US9911303W WO9960613A3 WO 1999060613 A3 WO1999060613 A3 WO 1999060613A3 US 9911303 W US9911303 W US 9911303W WO 9960613 A3 WO9960613 A3 WO 9960613A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
processing system
wafer processing
power supply
minimizing plasma
Prior art date
Application number
PCT/US1999/011303
Other languages
French (fr)
Other versions
WO1999060613A2 (en
Inventor
Richard R Mett
Siamak Salimian
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO1999060613A2 publication Critical patent/WO1999060613A2/en
Publication of WO1999060613A3 publication Critical patent/WO1999060613A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

A method and apparatus for retaining a substrate, such as a semiconductor wafer, upon an electrostatic chuck within a semiconductor wafer processing system. Specifically, the apparatus contains a high voltage, DC power supply that is capable of both sourcing and sinking current at any polarity of output voltage level. This power supply is coupled to at least one electrode of an electrostatic chuck. Consequently, the power supply can be used to dynamically control the chucking voltage to apply a negative potential difference between said wafer and chuck.
PCT/US1999/011303 1998-05-21 1999-05-21 Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system WO1999060613A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8622398P 1998-05-21 1998-05-21
US60/086,223 1998-05-21

Publications (2)

Publication Number Publication Date
WO1999060613A2 WO1999060613A2 (en) 1999-11-25
WO1999060613A3 true WO1999060613A3 (en) 2000-01-20

Family

ID=22197112

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/011303 WO1999060613A2 (en) 1998-05-21 1999-05-21 Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system

Country Status (1)

Country Link
WO (1) WO1999060613A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8879233B2 (en) 2009-05-15 2014-11-04 Entegris, Inc. Electrostatic chuck with polymer protrusions
US9025305B2 (en) 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck
US9543187B2 (en) 2008-05-19 2017-01-10 Entegris, Inc. Electrostatic chuck

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6304424B1 (en) * 1998-04-03 2001-10-16 Applied Materials Inc. Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system
US6430022B2 (en) * 1999-04-19 2002-08-06 Applied Materials, Inc. Method and apparatus for controlling chucking force in an electrostatic

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5587045A (en) * 1995-04-27 1996-12-24 International Business Machines Corporation Gettering of particles from an electro-negative plasma with insulating chuck
WO1997037382A1 (en) * 1996-03-29 1997-10-09 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
EP0837500A2 (en) * 1996-10-17 1998-04-22 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5332441A (en) * 1991-10-31 1994-07-26 International Business Machines Corporation Apparatus for gettering of particles during plasma processing
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5587045A (en) * 1995-04-27 1996-12-24 International Business Machines Corporation Gettering of particles from an electro-negative plasma with insulating chuck
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
WO1997037382A1 (en) * 1996-03-29 1997-10-09 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
EP0837500A2 (en) * 1996-10-17 1998-04-22 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DAVIET J -F ET AL: "ELECTROSTATIC CLAMPING APPLIED TO SEMICONDUCTOR PLASMA PROCESSING I. THEORETICAL MODELING", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 140, no. 11, 1 November 1993 (1993-11-01), pages 3245 - 3256, XP000424496, ISSN: 0013-4651 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543187B2 (en) 2008-05-19 2017-01-10 Entegris, Inc. Electrostatic chuck
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US8879233B2 (en) 2009-05-15 2014-11-04 Entegris, Inc. Electrostatic chuck with polymer protrusions
US9025305B2 (en) 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck

Also Published As

Publication number Publication date
WO1999060613A2 (en) 1999-11-25

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