WO1999030372A3 - Opto-electronical component for the infrared wavelength range - Google Patents

Opto-electronical component for the infrared wavelength range Download PDF

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Publication number
WO1999030372A3
WO1999030372A3 PCT/DE1998/003641 DE9803641W WO9930372A3 WO 1999030372 A3 WO1999030372 A3 WO 1999030372A3 DE 9803641 W DE9803641 W DE 9803641W WO 9930372 A3 WO9930372 A3 WO 9930372A3
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength range
infrared wavelength
opto
component
ru2si3
Prior art date
Application number
PCT/DE1998/003641
Other languages
German (de)
French (fr)
Other versions
WO1999030372A2 (en
Inventor
Siegfried Mantl
Daniel Lenssen
Helge Bay
Original Assignee
Forschungszentrum Juelich Gmbh
Siegfried Mantl
Daniel Lenssen
Helge Bay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Siegfried Mantl, Daniel Lenssen, Helge Bay filed Critical Forschungszentrum Juelich Gmbh
Priority to EP98966531A priority Critical patent/EP1040527A2/en
Publication of WO1999030372A2 publication Critical patent/WO1999030372A2/en
Publication of WO1999030372A3 publication Critical patent/WO1999030372A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3223—IV compounds
    • H01S5/3224—Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3427—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in IV compounds

Abstract

A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 νm. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature.
PCT/DE1998/003641 1997-12-11 1998-12-11 Opto-electronical component for the infrared wavelength range WO1999030372A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98966531A EP1040527A2 (en) 1997-12-11 1998-12-11 Opto-electronical component for the infrared wavelength range

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19754945.4 1997-12-11
DE1997154945 DE19754945B4 (en) 1997-12-11 1997-12-11 Optoelectronic component for the infrared wavelength range with semiconducting ruthenium silicide

Publications (2)

Publication Number Publication Date
WO1999030372A2 WO1999030372A2 (en) 1999-06-17
WO1999030372A3 true WO1999030372A3 (en) 1999-07-29

Family

ID=7851475

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/003641 WO1999030372A2 (en) 1997-12-11 1998-12-11 Opto-electronical component for the infrared wavelength range

Country Status (3)

Country Link
EP (1) EP1040527A2 (en)
DE (1) DE19754945B4 (en)
WO (1) WO1999030372A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113675291B (en) * 2021-08-20 2023-03-28 电子科技大学 Double-layer silicon-based photoelectric synapse device based on Schottky contact and preparation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782377A (en) * 1986-09-30 1988-11-01 Colorado State University Research Foundation Semiconducting metal silicide radiation detectors and source
WO1993009564A1 (en) * 1991-11-06 1993-05-13 Forschungszentrum Jülich GmbH PROCESS FOR PRODUCING A Si/FeSi2-HETEROSTRUCTURE

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782377A (en) * 1986-09-30 1988-11-01 Colorado State University Research Foundation Semiconducting metal silicide radiation detectors and source
WO1993009564A1 (en) * 1991-11-06 1993-05-13 Forschungszentrum Jülich GmbH PROCESS FOR PRODUCING A Si/FeSi2-HETEROSTRUCTURE

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHANG Y S ET AL: "FORMATION AND STRUCTURE OF EPITAXIAL RUTHENIUM SILICIDES ON (111)SI", JOURNAL OF APPLIED PHYSICS, vol. 68, no. 5, 1 September 1990 (1990-09-01), pages 2411 - 2414, XP000215574 *
VINING C B ET AL: "PROGRESS IN DOPING OF RUTHENIUM SILICIDE (RU2SI3)", PROCEEDINGS OF THE 27TH INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE, SAN DIEGO, CA, USA, 3. - 7. AUGUST 1992, vol. 3, WARRENDALE, PA, USA, SOC. AUTOMOTIVE ENG, USA, pages 3489 - 3492, XP002101450 *
WOLF W ET AL: "ELECTRONIC STRUCTURE OF THE NOWOTNY CHIMNEY-LADDER SILICIDE RU2SI3", PHYSICAL REVIEW B (CONDENSED MATTER), vol. 55, no. 11, 15 March 1997 (1997-03-15), NEW YORK, US, pages 6918 - 6926, XP002101449 *

Also Published As

Publication number Publication date
DE19754945A1 (en) 1999-06-24
WO1999030372A2 (en) 1999-06-17
DE19754945B4 (en) 2006-04-27
EP1040527A2 (en) 2000-10-04

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