WO1999003197A2 - A high speed and high gain operational amplifier - Google Patents
A high speed and high gain operational amplifier Download PDFInfo
- Publication number
- WO1999003197A2 WO1999003197A2 PCT/SE1998/001347 SE9801347W WO9903197A2 WO 1999003197 A2 WO1999003197 A2 WO 1999003197A2 SE 9801347 W SE9801347 W SE 9801347W WO 9903197 A2 WO9903197 A2 WO 9903197A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pair
- nmos
- cascode
- transistor
- current source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45192—Folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
- H03F3/45699—Measuring at the input circuit of the differential amplifier
- H03F3/45717—Controlling the loading circuit of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45402—Indexing scheme relating to differential amplifiers the CMCL comprising a buffered addition circuit, i.e. the signals are buffered before addition, e.g. by a follower
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45418—Indexing scheme relating to differential amplifiers the CMCL comprising a resistor addition circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45424—Indexing scheme relating to differential amplifiers the CMCL comprising a comparator circuit
Definitions
- the present invention relates to the design of high speed and high gain operational amplifiers for the use in high performance switched-capacitor analog circuits, e.g., high performance analog-to-digital converters.
- Operational amplifiers are the most crucial building blocks of analog circuits. For high perfomance analog-to-digital converters in wideband radio systems the operational amplifiers set the limit of speed and accuracy.
- Operational amplifiers are the heart of most voltage-mode analog circuits. They usually dictate the operation speed and the accuracy of the switched-capacitor (SC) cicuits . They also consume most of the power in the SC circuits. High performance analog-to-digital (A/D) coverters usually use the SC circuit technique. Therefore, the performance of the operational amplifiers determines the perfomance of the A/D converters .
- the load is purely capacitive.
- OTAs operational transconductance amplifiers
- the capacitive load is used to create the single dominant pole , which usually yields high unity-gain bandwidth.
- the DC gain is usually moderate but can be improved by cascoding.
- multi-stage operational amplifiers internal miller capacitors and sometimes resistors are used to split poles and introduce zeros to compensate for the phase lag and the frequency response can be independent of the load.
- the unity-gain bandwith is usually lower than the single-stage OTAs, though the DC gain is higher due to the cascading of more stages.
- high speed A/D converters usually single-stage architectures are preferred in that it is possible to achieve a single-pole settling and to have a very wide bandwidth. However, the gain is usually not enough for high accuracy A/D converters.
- the aim of the invetion is to increase the gain without suffering the speed and that may be achieved by designing a high speed and high gain operational amplifier for the use in high performance switched-capacitor analog circuits, e.g., high performance analog-to-digital coverters.
- the invented operational amplifier is a single-stage operational transconductance amplifier type with single cascode for the N-type transistors and double cascode for the P-type transistors. With reference to the cited document there should be a single-cascode in the N- and P-branches.
- the invention may also comprise a cotinuous-time common-mode feedback. With this design of the invention , high speed and high gain can be maintained with a large phase margin to guarantee the stability.
- Figure 1 is schematic view of the invented operational tranconductance amplifier OTA.
- Figure 2 is a schematic view of the common-mode feedback circuit according to the embodiment.
- Figure 3 shows a simulated frequency response of the OTA according to the invention.
- the operational amplifier shown in figure 1 is a folded- cascode OTA. Unlike coventional OTAs a double cascode is used in the P-branch to increase the gain without much speed penalty.
- Transistors MO and Ml are the input devices and a transistor M12 provides bias current for them. Input signals Vin+ and Vin- are applied to the gates of transistors MO and Ml, respectively.
- Transistors M2 and M3 are bias transistors for the P-branch.
- Transistors M4 and M5 and the first cascode transistor pair in the P-branch and transistors M10 and Mil are the second cascode transistor pair in the P-branch.
- Transistors M6 and M7 are bias transistors for the N-branch and at the same time they provide a means to control the common-mode component via a signal CMFB generated in a common-mode feedback circuit.
- Transistors M8 and M9 are the cascode transistor pair in the N-brach.
- Vout+ and Vout- are the fully differential outputs.
- VbiasO is the bias voltage for transistor M12
- Vbiasl is the bias voltage for transistors M8 and M9
- Vbias2 is the bias voltage for transistors M10 and Mil
- Vbias3 is the bias voltage for transistors M4 and M5
- Vbias4 is the bias voltage for transistors M2 and M3.
- AVCC and AVSS are the supply voltages usually having values of 5 and 0V, respectively.
- the invented operational amplifier shown in figure 1 is a single-stage OTA-type Operaational amplifier and the unity-
- the unity-gain bandwidth will be at least six times larger than the sample frequency.
- the unity-gain bandwidth should be over 300 Mhz.
- the thermal noise pov/er and other noise power is inversely proportional to the sampling capacitance.
- the non-dominant poles can decrease the phase margin, if the non dominant poles are not so far apart from the dominant pole that is inversely proportional to the load capacitance. Therefore the load capacitance will be chosen 2* >4 pF. With this large sampling capacitance, the thermal noise does not limit the dynamic range of 12 bits if the peak input signal is larger than 0.5 V.
- phase margin should be larger than 45 deg for SC applications. With this large load capacitance, the phase margin is easy to guarantee.
- the accuracy is directly related with the DC gain of the OTA and its capacitive surroundings.
- a 12 -bit accuracy is needed, a rough estimation of DC gain is given by: A D C > 2 - 2 n * 7ZdB .
- cascode technique Since the gain and output resistance of a PMOS transistor is considerably smaller than the gain and output resistance of an NMOS transistor, double cascodes are used for the upper branch as shown in figure 1.
- the DC gain is given by:
- ⁇ DC 8 m in ( r 0 6 - ⁇ ⁇ /3 'I r o2 ' A M-i ' A M ⁇ 0> '
- r D and r 0 are the output resistance of the transistors M6 and M2 , respectively
- a M • M and A M W are t le 9 a ⁇ n of the transistors M8 , M4 and M10 , respectively .
- the drawback is the limited output voltage range. However, it is of benefit to reduce the voltage swing to reduce distortion due to the sampling.
- the common-mode voltage is set to be 2V.
- the output voltage can swing more than +/- 1.2V without degradation in performance.
- Transistors M35 and M36 are the input devices of the common- mode feedback circuit and their gates are connected with the input voltages Vin+ and Vin- , respectively, which are the fully-differential outputs Vout+ and Vout- of the operational amplifier of figure 1.
- Transistors M33 and M34 provide bias currents for the input devices M35 and M36.
- Resistors 137 and 138 are used to generate the common-mode voltage in the fully differential input voltages at the gate of transistor M66. Noticable is that the common-mode voltage is level-shifted due to the gate-source voltage of transistors M35 and M36.
- the common-mode input voltage Vcm is applied to the gate of transistor M67 via transistor M39 and level-shifted by the gate-source voltage of transistor M39.
- Transistor M40 provides the bias current for transistor M39.
- the difference between the voltages applied at the differential pair M66 and M67 i.e., the level-shifted common-mode voltage in the fully differential signals and the level-shifted common-mode input voltage is used to generate the common-mode control signal CMFB used in the operational amplifier of figure 1.
- Transistors M68 and M69 are the loads for the differential transistor pair M66 and M67 and the current in transistor M69 is used to control the common-mode voltage in the operational amplifier of figure 1 via the signal CMFB.
- Transistor M64 is the bias transistor for the differential pair M66 and M67 and transistor M65 is the cascode transistor for transistor M64.
- VbiasO is the bias voltage for transistors M33, M34, and M40
- Vbias3 is the bias voltage for transistor M65
- Vbias4 is the bias voltage for transistor M64.
- AVCC and AVSS are the supply voltages having values of 5 and 0V, respectively.
- the bias current is varied by 20%, and both the input and the output common-mode voltage are varied from 1.8 to 2V.
- the DC gain is larger than 83dB
- the unity gain bandwidth is larger than 400Mhz
- the phase margin is around 60deg with a 4-pF capacitance, as seen in figure 3.
- the performance of the OTA is summarized in table 1.
- Table 1 Summary of the performance of the OTA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU83665/98A AU8366598A (en) | 1997-07-08 | 1998-07-08 | A high speed and high gain operational amplifier |
JP50854999A JP2002511995A (en) | 1997-07-08 | 1998-07-08 | High-speed, high-gain operational amplifier |
DE69836329T DE69836329T2 (en) | 1997-07-08 | 1998-07-08 | FAST AND HIGH-AMPLIFIER OPERATIONAL AMPLIFIER |
EP98934061A EP0996996B1 (en) | 1997-07-08 | 1998-07-08 | A high speed and high gain operational amplifier |
CA002295840A CA2295840A1 (en) | 1997-07-08 | 1998-07-08 | A high speed and high gain operational amplifier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9702641-3 | 1997-07-08 | ||
SE9702641A SE519691C2 (en) | 1997-07-08 | 1997-07-08 | High speed and high gain operational amplifier |
Publications (3)
Publication Number | Publication Date |
---|---|
WO1999003197A2 true WO1999003197A2 (en) | 1999-01-21 |
WO1999003197A3 WO1999003197A3 (en) | 1999-04-15 |
WO1999003197B1 WO1999003197B1 (en) | 1999-05-14 |
Family
ID=20407690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE1998/001347 WO1999003197A2 (en) | 1997-07-08 | 1998-07-08 | A high speed and high gain operational amplifier |
Country Status (11)
Country | Link |
---|---|
US (1) | US6018268A (en) |
EP (1) | EP0996996B1 (en) |
JP (1) | JP2002511995A (en) |
KR (1) | KR20010014373A (en) |
CN (1) | CN1111947C (en) |
AU (1) | AU8366598A (en) |
CA (1) | CA2295840A1 (en) |
DE (1) | DE69836329T2 (en) |
SE (1) | SE519691C2 (en) |
TW (1) | TW393831B (en) |
WO (1) | WO1999003197A2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780315B1 (en) | 2006-04-13 | 2007-11-28 | 한국전기연구원 | Folded cascode CMOS OP amplifier and single photon counting image sensor in response to adaptive bias voltage |
US7352241B2 (en) | 2004-10-04 | 2008-04-01 | Samsung Electronics Co., Ltd. | Variable gain amplifier |
EP2709273A1 (en) * | 2012-09-18 | 2014-03-19 | Broadcom Corporation | Folded-cascode amplifier |
EP2944968A1 (en) * | 2012-09-26 | 2015-11-18 | Broadcom Corporation | Class-ab radio frequency amplifier for envelope detector |
Families Citing this family (16)
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---|---|---|---|---|
US6362687B2 (en) * | 1999-05-24 | 2002-03-26 | Science & Technology Corporation | Apparatus for and method of controlling amplifier output offset using body biasing in MOS transistors |
US7391262B2 (en) * | 2006-04-25 | 2008-06-24 | Texas Instruments Incorporated | Circuit and method for driving bulk capacitance of amplifier input transistors |
TWI325223B (en) | 2006-06-16 | 2010-05-21 | Realtek Semiconductor Corp | Amplifier with common-mode feedback circuit |
CN101051841B (en) * | 2007-02-06 | 2010-08-25 | 复旦大学 | Window type parallel modulus converter suitable for digital power controller |
JP4773991B2 (en) * | 2007-02-16 | 2011-09-14 | 富士通株式会社 | Source follower circuit and semiconductor device |
KR20100021938A (en) * | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | Folded cascode operational amplifier having improved phase margin |
CN101969297B (en) * | 2010-09-30 | 2012-11-21 | 苏州思瑞浦微电子科技有限公司 | Continuous-time common-mode feedback circuit for fully-differential operational amplifier circuit |
US8890611B2 (en) | 2012-02-08 | 2014-11-18 | Mediatek Inc. | Operational amplifier circuits |
US8902003B2 (en) * | 2012-12-17 | 2014-12-02 | Intel Mobile Communications GmbH | Amplifier, mobile communication device and method for amplifying |
CN103560760B (en) * | 2013-11-13 | 2019-05-03 | 福禄克精密测量有限公司 | Amplifying circuit and measuring device |
CN104135240A (en) * | 2014-07-23 | 2014-11-05 | 西安空间无线电技术研究所 | Fully differential operational amplification application circuit determining method based on loop feedback coefficient |
CN105242735B (en) * | 2015-10-27 | 2017-03-15 | 北京兆易创新科技股份有限公司 | A kind of asymmetric mu balanced circuit for NAND FLASH |
US10084421B1 (en) * | 2017-07-31 | 2018-09-25 | Harman International Industries, Incorporated | Plural feedback loops instrumentation folded cascode amplifier |
US10873304B2 (en) | 2017-09-06 | 2020-12-22 | Samsung Electronics Co., Ltd. | Pole-splitting and feedforward capacitors in common mode feedback of fully differential amplifier |
US10594278B2 (en) | 2017-09-06 | 2020-03-17 | Samsung Electronics Co., Ltd. | Pole-splitting and feedforward capacitors in common mode feedback of fully differential amplifier |
CN112865800B (en) * | 2020-12-31 | 2024-04-02 | 瑞声科技(南京)有限公司 | Sigma-delta ADC modulator for optimizing OTA and electronic equipment |
Citations (5)
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EP0295221A2 (en) * | 1987-06-10 | 1988-12-14 | STMicroelectronics S.r.l. | CMOS power operational amplifier |
EP0325299A2 (en) * | 1988-01-21 | 1989-07-26 | Nec Corporation | An operational amplifier |
US5434538A (en) * | 1992-09-17 | 1995-07-18 | Massachusetts Institute Of Technology | Gain enhancement for amplifier using a replica amplifier |
WO1995023472A1 (en) * | 1994-02-23 | 1995-08-31 | Apple Computer, Inc. | High speed differential receiver for data communications |
US5589785A (en) * | 1994-04-29 | 1996-12-31 | Analog Devices, Inc. | Low-voltage CMOS comparator |
Family Cites Families (10)
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IT1185638B (en) * | 1985-07-18 | 1987-11-12 | Sgs Microelettronica Spa | ALL-DIFFERENTIAL OPERATIONAL AMPLIFIER FOR INTEGRATED CIRCUITS IN MOS TECHNOLOGY |
EP0261482B1 (en) * | 1986-09-26 | 1994-07-20 | Siemens Aktiengesellschaft | Operational amplifier |
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CA2050878C (en) * | 1991-09-06 | 1999-10-19 | Gerald Molnar | Power amplifier with quiescent current control |
FR2694463B1 (en) * | 1992-07-30 | 1994-10-21 | Sgs Thomson Microelectronics | CMOS differential amplifier with common mode feedback. |
US5491447A (en) * | 1994-05-13 | 1996-02-13 | International Business Machines Corporation | Operational transconductance amplifier with independent transconductance and common mode feedback control |
US5604464A (en) * | 1995-07-07 | 1997-02-18 | Advanced Micro Devices, Inc. | Cascode operational amplifier with multiple input stage |
US5642078A (en) * | 1995-09-29 | 1997-06-24 | Crystal Semiconductor Corporation | Amplifier having frequency compensation by gain degeneration |
US5668468A (en) * | 1996-01-11 | 1997-09-16 | Harris Corporation | Common mode stabilizing circuit and method |
US5629641A (en) * | 1996-02-06 | 1997-05-13 | Advanced Micro Devices, Inc. | Differential CMOS current amplifier with controlled bandwidth and common mode distortion |
-
1997
- 1997-07-08 SE SE9702641A patent/SE519691C2/en not_active IP Right Cessation
- 1997-08-04 TW TW086111135A patent/TW393831B/en active
-
1998
- 1998-07-08 JP JP50854999A patent/JP2002511995A/en active Pending
- 1998-07-08 KR KR1019997012534A patent/KR20010014373A/en not_active Application Discontinuation
- 1998-07-08 WO PCT/SE1998/001347 patent/WO1999003197A2/en active IP Right Grant
- 1998-07-08 CA CA002295840A patent/CA2295840A1/en not_active Abandoned
- 1998-07-08 AU AU83665/98A patent/AU8366598A/en not_active Abandoned
- 1998-07-08 CN CN98806959A patent/CN1111947C/en not_active Expired - Fee Related
- 1998-07-08 EP EP98934061A patent/EP0996996B1/en not_active Expired - Lifetime
- 1998-07-08 DE DE69836329T patent/DE69836329T2/en not_active Expired - Lifetime
- 1998-07-08 US US09/111,866 patent/US6018268A/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0295221A2 (en) * | 1987-06-10 | 1988-12-14 | STMicroelectronics S.r.l. | CMOS power operational amplifier |
EP0325299A2 (en) * | 1988-01-21 | 1989-07-26 | Nec Corporation | An operational amplifier |
US5434538A (en) * | 1992-09-17 | 1995-07-18 | Massachusetts Institute Of Technology | Gain enhancement for amplifier using a replica amplifier |
WO1995023472A1 (en) * | 1994-02-23 | 1995-08-31 | Apple Computer, Inc. | High speed differential receiver for data communications |
US5589785A (en) * | 1994-04-29 | 1996-12-31 | Analog Devices, Inc. | Low-voltage CMOS comparator |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7352241B2 (en) | 2004-10-04 | 2008-04-01 | Samsung Electronics Co., Ltd. | Variable gain amplifier |
KR100780315B1 (en) | 2006-04-13 | 2007-11-28 | 한국전기연구원 | Folded cascode CMOS OP amplifier and single photon counting image sensor in response to adaptive bias voltage |
EP2709273A1 (en) * | 2012-09-18 | 2014-03-19 | Broadcom Corporation | Folded-cascode amplifier |
US8872586B2 (en) | 2012-09-18 | 2014-10-28 | Broadcom Corporation | Folded-cascode amplifier |
EP2944968A1 (en) * | 2012-09-26 | 2015-11-18 | Broadcom Corporation | Class-ab radio frequency amplifier for envelope detector |
Also Published As
Publication number | Publication date |
---|---|
WO1999003197B1 (en) | 1999-05-14 |
EP0996996A2 (en) | 2000-05-03 |
KR20010014373A (en) | 2001-02-26 |
WO1999003197A3 (en) | 1999-04-15 |
SE9702641D0 (en) | 1997-07-08 |
CN1111947C (en) | 2003-06-18 |
SE519691C2 (en) | 2003-04-01 |
AU8366598A (en) | 1999-02-08 |
CA2295840A1 (en) | 1999-01-21 |
EP0996996B1 (en) | 2006-11-02 |
SE9702641L (en) | 1999-01-09 |
DE69836329D1 (en) | 2006-12-14 |
CN1262811A (en) | 2000-08-09 |
JP2002511995A (en) | 2002-04-16 |
DE69836329T2 (en) | 2007-05-31 |
TW393831B (en) | 2000-06-11 |
US6018268A (en) | 2000-01-25 |
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