WO1998043296A3 - Device for low-inductive coupling of a gate turn-off thyristor to its control device - Google Patents

Device for low-inductive coupling of a gate turn-off thyristor to its control device Download PDF

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Publication number
WO1998043296A3
WO1998043296A3 PCT/DE1998/000775 DE9800775W WO9843296A3 WO 1998043296 A3 WO1998043296 A3 WO 1998043296A3 DE 9800775 W DE9800775 W DE 9800775W WO 9843296 A3 WO9843296 A3 WO 9843296A3
Authority
WO
WIPO (PCT)
Prior art keywords
thyristor
gate turn
control device
low
inductive coupling
Prior art date
Application number
PCT/DE1998/000775
Other languages
German (de)
French (fr)
Other versions
WO1998043296A2 (en
Inventor
Dieter Metzner
Michael Peppel
Eric Baudelot
Original Assignee
Siemens Ag
Dieter Metzner
Michael Peppel
Eric Baudelot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Dieter Metzner, Michael Peppel, Eric Baudelot filed Critical Siemens Ag
Priority to EP98924013A priority Critical patent/EP0968531A2/en
Publication of WO1998043296A2 publication Critical patent/WO1998043296A2/en
Publication of WO1998043296A3 publication Critical patent/WO1998043296A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristors (AREA)

Abstract

The invention relates to a device for low-inductive coupling of a gate turn-off thyristor (6) to its control device. The gate turn-off thyristor (6) has a gate input in the form of a ring-shaped gate flange (12) and its control device has connections in the form of a conductive baseplate (20). The conductive baseplate (20) is provided with a bore hole (22) corresponding to the gate turn-off thyristor (6). The device is also provided with a counterpiece to the cathode (16) and a ring-shaped spacing member (18). According to the invention, said device further includes several threaded rods (14), a ring-shaped pressure element (24) made of insulating material and several adjusting nuts (26). Said threaded rods (14) are circularly screwed to a cooling plate (2) on the cathode side, said plate accommodating the elements (16, 18, 20, 12, 24) and securing the latter by means of adjusting nuts (26). The inventive device for low-inductive coupling of a gate turn-off thyristor to its control device can thus be obtained, whereby said inventive device also comprises at least one thyristor (6) cooling plate (2, 4) and is easier to assemble.
PCT/DE1998/000775 1997-03-21 1998-03-16 Device for low-inductive coupling of a gate turn-off thyristor to its control device WO1998043296A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98924013A EP0968531A2 (en) 1997-03-21 1998-03-16 Device for low-inductive coupling of a gate turn-off thyristor to its control device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19711965.4 1997-03-21
DE1997111965 DE19711965C2 (en) 1997-03-21 1997-03-21 Device for the low-inductance connection of a switchable thyristor to its control device

Publications (2)

Publication Number Publication Date
WO1998043296A2 WO1998043296A2 (en) 1998-10-01
WO1998043296A3 true WO1998043296A3 (en) 1999-03-11

Family

ID=7824217

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/000775 WO1998043296A2 (en) 1997-03-21 1998-03-16 Device for low-inductive coupling of a gate turn-off thyristor to its control device

Country Status (3)

Country Link
EP (1) EP0968531A2 (en)
DE (1) DE19711965C2 (en)
WO (1) WO1998043296A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112563210A (en) * 2020-12-11 2021-03-26 浙江华晶整流器有限公司 Reverse conducting module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614977A1 (en) * 1967-06-12 1971-05-27 Halbleiterwerk Frankfurt Oder Semiconductor component with a semiconductor element enclosed in a housing
FR2614469A1 (en) * 1987-04-24 1988-10-28 Inrets Cooling device, in particular for power semiconductor
US5168425A (en) * 1991-10-16 1992-12-01 General Electric Company Mounting arrangements for high voltage/high power semiconductors
EP0516416A1 (en) * 1991-05-30 1992-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating the same
EP0588026A2 (en) * 1992-08-15 1994-03-23 Abb Research Ltd. Turn-off high-power semiconductor device
EP0729179A1 (en) * 1995-02-17 1996-08-28 ABB Management AG Pressure contact housing for semiconductor component
EP0746021A2 (en) * 1995-05-31 1996-12-04 Mitsubishi Denki Kabushiki Kaisha Compression bonded type semiconductor element and manufacturing method for the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614977A1 (en) * 1967-06-12 1971-05-27 Halbleiterwerk Frankfurt Oder Semiconductor component with a semiconductor element enclosed in a housing
FR2614469A1 (en) * 1987-04-24 1988-10-28 Inrets Cooling device, in particular for power semiconductor
EP0516416A1 (en) * 1991-05-30 1992-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of fabricating the same
US5168425A (en) * 1991-10-16 1992-12-01 General Electric Company Mounting arrangements for high voltage/high power semiconductors
EP0588026A2 (en) * 1992-08-15 1994-03-23 Abb Research Ltd. Turn-off high-power semiconductor device
EP0729179A1 (en) * 1995-02-17 1996-08-28 ABB Management AG Pressure contact housing for semiconductor component
EP0746021A2 (en) * 1995-05-31 1996-12-04 Mitsubishi Denki Kabushiki Kaisha Compression bonded type semiconductor element and manufacturing method for the same

Also Published As

Publication number Publication date
WO1998043296A2 (en) 1998-10-01
DE19711965A1 (en) 1998-09-24
DE19711965C2 (en) 1999-01-14
EP0968531A2 (en) 2000-01-05

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