WO1998037436A1 - Method, apparatus and arrangement for determination of radiation - Google Patents
Method, apparatus and arrangement for determination of radiation Download PDFInfo
- Publication number
- WO1998037436A1 WO1998037436A1 PCT/FI1998/000153 FI9800153W WO9837436A1 WO 1998037436 A1 WO1998037436 A1 WO 1998037436A1 FI 9800153 W FI9800153 W FI 9800153W WO 9837436 A1 WO9837436 A1 WO 9837436A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation
- circuit
- component
- oscillating circuit
- capacitance
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000008859 change Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004125 X-ray microanalysis Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 238000001730 gamma-ray spectroscopy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004958 nuclear spectroscopy Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000001072 vacuum ultraviolet spectrophotometry Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Definitions
- the present invention relates to the determination of radiation, such as electromagnetic or particle radiation, to be used for instance in applications determining the energy of the radiation, and more particularly to a method in accordance with the preamble of claim 1.
- the invention relates also to an apparatus for determining radiation in accordance with the preamble of claim 7 and to an arrangement for determining the radiation in accordance with the preamble of claim 13.
- the electrical noise is dependent on the capacitance of the detector, which limits the size of the detector (the active detection area) .
- the upper limit for the active detection area is considered to be 10 mm 2 , after which the electrical noise starts increasing considerably in respect with the size of the detector.
- US patent number 3,745,357 discloses a solution in which the determination of- radiation is done by using a capacitive bridge in order to circumvent the electrical noise, which is present when using charge sensitive preamplifiers.
- this method has been introduced mainly for a continuous measurement of the intensity of the radiation, and it's sensitivity for a measurement of the energy of individual radiation photon or particle has not been adequate.
- the method has been realized by using components, which do not correspond the state-of-art technology. Therefore it has not gained any notable success in the field of radiation detection.
- an object of the invention is to provide a method and an apparatus, by means of which the reliability, accuracy and usability can be increased.
- the invention is based on the realization that a signal from a radiation detector can be read with a completely novel way by means of a particular resonating ie. oscillating circuit, wherein said signal is based on the determined change in the capacitance of the detector component, said change being induced by the radiation.
- At least one resonating ie . oscillating circuit is provided as a part of the inventive apparatus . This oscillating circuit makes it possible to transform the change in the capacitance into a signal that corresponds the energy and intensity of the radiation.
- the used circuit may comprise a piezoelectric, dielectric or other type of resonator or an inductor.
- the inventive method is characterized by what is presented in the appended claims 1...6 and in particular in the characterizing portion of claim 1.
- the apparatus in accordance with the invention is mainly characterized by what is presented in the appended claims 7...12 and in particular in the characterizing portion of claim 7.
- the arrangement in accordance with the invention is mainly characterized by what is presented in the appended claims 13...15 and in particular in the characterizing portion of claim 13.
- the method for the determination of radiation comprises a step for connecting the radiation detector component as a part of the radiation sensitive resonating ie. oscillating circuit means in order to measure the capacitance change induced by the radiation.
- the capacitance change can be determined by measuring the change in the amplitude, phase or frequency of the radiation sensitive resonating or oscillating circuit.
- the determination of the radiation can be performed by connecting a reference oscillating circuit, which will not become exposed to the radiation, in parallel with the radiation sensitive circuit.
- the apparatus in accordance with the invention comprises an oscillating circuit, which includes the detector component and a resonator or alternatively an inductor component, said oscillating circuit being arranged to detect the radiation induced change in the capacitance of the detector component .
- the apparatus can comprise means for measuring the phase, amplitude or frequency of the oscillating circuit.
- the radiation sensitive detector means can consist of a semiconductor material.
- An arrangement in accordance with the invention for determining radiation comprises an oscillating circuit, which includes a resonator or alternatively an inductor component, while the oscillating circuit is arranged to detect the radiation induced change in the capacitance of the detector component .
- the arrangement comprises further a reference oscillating circuit, which includes a reference capacitance and a resonator or an inductor component corresponding with the structure of the radiation sensitive circuit.
- the apparatus and the method in accordance with the invention can be used in all applications which require a determination of radiation, and especially the energy of radiation.
- the commercially most important fields of utilization are considered to be the equipment which are used in the field of energy dispersive spectroscopy of ionizing radiation.
- Such equipment can be, for example
- Laboratory analysis equipment process control and analyzing equipment in industry, such as in the paper or chemical industry (eg. analysing of coatings) , industrial x-ray analysis equipment, field instruments for on-site elemental analysis and equipment for X-ray microanalysis, x-ray astronomy or the research of X-ray physics, solid state physics and materials science.
- VUV spectroscopy for materials research.
- the invention offers considerable advantages. It enables an improved detection and/or measurement or determination of radiation with semiconductor technology.
- the active detection area of the detector component can be increased without undesirable effects to the accuracy of the measurements.
- the measurements can be made faster and more accurate and yet keep the needed apparatus simple and compact .
- the apparatus can be constructed from known standard components, such as the silicon components used in microelectronics industry. Correspondingly it is possible to use the standard manufacturing techniques already used in microelectronics industry, which lowers the manufacturing costs of the detecting apparatus .
- the apparatus, operating in accordance with the invention can operate in room temperature or close to room temperature using at most a lightweight thermoelectric cooler, which is an improvement in comparison with the prior art semiconductor detectors, which use, for instance, heavy liquid nitrogen cooling.
- Figure 1 shows a circuit diagram of one embodiment according to the present invention.
- Figure 2 shows a possible oscillating circuit.
- Figures 3 - 5 show schematic cross-sections of possible semiconductor detector structures.
- FIG. 6 shows an example of a detector apparatus in accordance with the invention. Detailed description of the drawing
- Figure 1 shows an embodiment of a radiation detection arrangement in accordance with the invention. It consists of a radiation sensitive oscillating circuit 10, and a reference oscillating circuit 20 connected parallel with the oscillating circuit 10.
- the circuitry further comprises control or read-out electronics, which in the examples consists of a control circuit 22, mixer circuit means 24, preamplifiers 25 and 26, resistors 28 and capacitors 30.
- the radiation sensitive circuit 10 consists of an inductor 9 and a radiation detector 8.
- the reference oscillating circuit consists -of an inductor 19 and a reference capacitor 18, the values of which are known.
- the reference circuit 20 is constructed eg. by means of a suitable isolation such that it will not receive any radiation, ie. it is not exposed to the radiation.
- the possible structures of the radiation detector 8 are described in more detail in connection with figures 3-5.
- the inductor 9 in figure 1 can be replaced with a piezoelectric resonator 11.
- a dielectric resonator or some another type of a resonator component used in radio frequency and/or microwave electronics can be used.
- a similar reference piezoelectric resonator will be used instead of the reference inductor 19 of figure 1.
- the detector structure embodies a single side processed p ⁇ -junction diode 8.
- the diode 8 comprises a metallization 7 on the surfaces thereof according to the figure 3, n-type silicon substrate 6 within the structure and p+ and n+ contacts (electrodes) , which may in most cases be ion implanted on the substrate.
- figure 3 shows the passivation regions 3.
- the depletion region 14 of the diode 8 is achieved by depleting the n-substrate from charge carriers with an electric field.
- the semiconductor substrate 6 can be of any semiconductor material, onto which it is possible to pattern pn-junctions, and which can.be depleted from charge carriers with an electric field.
- One material which is considered very good because of the desirable properties and manufacturing technology, is high purity silicon (resistivity > 1000 ⁇ cm) .
- the commercial availability of this exemplifying material is also good.
- Other possible materials are, for example, gallium- arsenide (GaAs) , cadmiumtelluride (CdTe) , cadmium-zinc-telluri- de (CdZnTe) or germanium (Ge) , or other corresponding materials per se known by the skilled person.
- the charge accumulated into the diode 8 needs to be reset from time to time by using a suitable switch, such as the switching circuit 16.
- a suitable switch such as the switching circuit 16.
- the other end of the diode 1 is shown as just connected to a power supply in order to charge the capacitor C s .
- the power supply is connected off and the charge, which is induced by the radiation, is changing the bias voltage according to the equation
- ⁇ v is the change in the voltage
- C s is the capacitance of the capacitor
- ⁇ Q is the change of the charge which was induced by the radiation.
- the change of the voltage is dependent on the square root of the thickness D of the depletion region 14, which in turn is inversely dependent to the capacitance C3 of the detector.
- the detector 8 shown in the figure 3, the capacitance of which changes as a result of the radiation induced charge, is advantageous particularly because it's structure is simple and it is therefore affordable to manufacture. All the required components and manufacturing techniques are per se known, and their availability is good.
- Figure 4 presents a double-side processed capacitive radiation detector 8. The operation thereof is based on the fact that the electrons (-) are drifted with an electric field into the centre of the detector and the holes (+) are collected onto the surface electrodes 5 on a detector chip. The detector needs to be reset from time to time in order to clear the substrate 6 from the accumulated electrons.
- the capacitance change is not measured by measuring the change in the depletion region, but by measuring directly the change of the capacitance which is caused by the radiation induced charge.
- the additional capacitor C s shown in figure 3 is not needed in here.
- the detector structure of figure 4 it is possible to achieve a better sensitivity than with the detec- tor structure of the figure 3.
- it is possible to acquire a value AC ⁇ /C ⁇ 10" 8 for a detector with an active area of 25 mm 2 .
- the fact that the utilization of this structure requires relatively complicated circuitry for biasing the detector chip can be regarded as a disadvantage compared with the structure of figure 3.
- the design and manufacture of the structure which can be processed from the two sides requires more time and effort and hence it is more expensive.
- the manufacturing of the structure of figure 4 is considered to be twice as expensive as that of the structure of figure 3.
- the figure 5 shows still another detector structure, which is based on the direct measurement of the charge cloud.
- the electric field is formed and influenced by the metal contacts 7 grown over the passivation layer 3 on the surfaces of the semiconductor substrate.
- the previously mentioned pn-junctions 3 or 4 are not needed, which makes the manufacturing of the detector easier and cheaper.
- a potential problem may be that the electrical field can not penetrate into the detector substrate as result of the thin charge carrier layers, accumulated directly under the surface passivations. These accumulation layers may screen the electric field so that no depletion layer is formed and the radiation induced charge is not seen by the electronics.
- the radiation induced signal, created inside the radiation detector 8, such as the example structures described above, can be measured in a completely novel way.
- the operation of the radiation detector 8 is based on the fact that the radiation caused by an individual radiation quantum (photon or particle) induces a number of charge carriers into the depletion area 14 of the detector, said number corresponding the energy of the quantums .
- the depletion region 14 of a semiconductor is depleted from charge carriers by means of the electric field.
- the radiation induces a change in the capacitance of the detector 8, and this change is then measured according to the invention.
- Sensors the operation of which is based on the measurement of the change in the capacitance, have been used previously, for example, in the measurement of temperature, humidity, velocity, acceleration, angular velocity, angular acceleration etc.
- the sensor arrangements of the above mentioned kind have been utilized for the first time in the measurement of radiation so that the detector can be realized with semiconductor technology. This enables the manufacture of sensors, which are more effective and accurate, but still cheaper and easier to manufacture and which can therefore be more easily mass produced in comparison with the prior art gas filled technology or liquid nitrogen cooled detectors.
- the radiation induced change in the capacitance of a radiation detector can be measured eg. by connecting the detector as a part of such an oscillating circuit which is driven by an oscillator, and monitoring the change of the frequency, amplitude or phase of this circuit.
- the method where the capacitance of the detector is tuned into a resonance with an inductor or a resonator component, and the change in the impedance is measured with a phase sensitive amplifier is considered as the most accurate.
- the resolution can be further optimized by adapting the optimum of the noise impedance of the preamplifier to equal with the tuned oscillating circuit output impedance.
- the radiation detector can be connected to form a part of an oscillator circuit, in which case the radiation induced change in the capacitance of the detector can be monitored by measuring the change of the frequency, amplitude or phase of this oscillator circuit .
- the change on the capacitance of the detector 8 is measured so that the detector structure 8 is connected in parallel with an inductor 9 or a resonator component 11 such as a piezoelectric crystal, dielectric resonator, etc.
- the inductance and capacitance of these is known.
- the change in the frequency, amplitude or phase of this oscillating circuit can be measured with different connections, where the system 10 under the measurement is connected in parallel or in bridge with a reference circuit 20, consisting of a reference capacitor 18 and a reference inductor or a resonator component 19.
- the radiation may then be defined by means of a control circuit 22, which may contain eg. a microprocessor.
- FIG. 6 presents a schematic overview of a realization of a compact radiation determination arrangement in accordance to the invention.
- the radiation detector 8 is installed on an insulating substrate 32, such as ceramics, glass etc.
- the substrate is patterned with a thin film technique, a thick film technique or other suitable technique, in order to provide the required electrical leads 17 for the electrical connections for the components and if necessary, the inductive component 9 in a close vicinity of the detector 8 on the same side of the substrate 32 as the detector is.
- the substrate plate 32 On the other side of the substrate plate 32 there is a metal plate or foil 34, or a corresponding electrically conductive component. On the other side of said metal plate 34 there is another ceramic etc. insulating substrate plate 33.
- the reference circuit 20 of the oscillating circuit 10 is mounted onto the other side of this other substrate 33 in a similar manner to the circuit 10.
- the metal or other conductive plate 34 acts as an electrical shield between the detector circuit 10 and the reference circuit 20.
- the metal plate 34 or corresponding component acts also as a radiation shield so that the detector component 8 is exposed to radiation but the components on side of the reference circuit are not exposed to the radiation.
- the system constructed in accordance with figure 6 is essentially compact.
- the length of the required leads and wiring can be minimized.
- it enables the thermal control in a environment, which is as similar as possible for both of the oscillating circuit 10 and the reference circuit 20. It is possible to implement cooling or other thermal controlling of the system by using the metal plate in the middle of the structure. This assures that the operation of both of the circuits is not affected by thermal effects, and thus the circuits are thermally stabilized.
- the system described here can be packaged into a standard type of a package, such as a TO-cans, etc., used in electronics industry.
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU62169/98A AU6216998A (en) | 1997-02-20 | 1998-02-20 | Method, apparatus and arrangement for determination of radiation |
EP98904198A EP1012629A1 (en) | 1997-02-20 | 1998-02-20 | Method, apparatus and arrangement for determination of radiation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI970712 | 1997-02-20 | ||
FI970712A FI101831B1 (en) | 1997-02-20 | 1997-02-20 | Method, apparatus and arrangement for determining radiation |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998037436A1 true WO1998037436A1 (en) | 1998-08-27 |
Family
ID=8548243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FI1998/000153 WO1998037436A1 (en) | 1997-02-20 | 1998-02-20 | Method, apparatus and arrangement for determination of radiation |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1012629A1 (en) |
AU (1) | AU6216998A (en) |
FI (1) | FI101831B1 (en) |
WO (1) | WO1998037436A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7763820B1 (en) | 2003-01-27 | 2010-07-27 | Spectramet, Llc | Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407276A (en) * | 1992-08-17 | 1995-04-18 | Jones; Barbara L. | Diamond temperature and radiation sensor |
US5559332A (en) * | 1994-11-04 | 1996-09-24 | Texas Instruments Incorporated | Thermal detector and method |
-
1997
- 1997-02-20 FI FI970712A patent/FI101831B1/en active
-
1998
- 1998-02-20 EP EP98904198A patent/EP1012629A1/en not_active Withdrawn
- 1998-02-20 WO PCT/FI1998/000153 patent/WO1998037436A1/en not_active Application Discontinuation
- 1998-02-20 AU AU62169/98A patent/AU6216998A/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5407276A (en) * | 1992-08-17 | 1995-04-18 | Jones; Barbara L. | Diamond temperature and radiation sensor |
US5559332A (en) * | 1994-11-04 | 1996-09-24 | Texas Instruments Incorporated | Thermal detector and method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7763820B1 (en) | 2003-01-27 | 2010-07-27 | Spectramet, Llc | Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli |
US8476545B2 (en) | 2003-01-27 | 2013-07-02 | Spectramet, Llc | Sorting pieces of material based on photonic emissions resulting from multiple sources of stimuli |
Also Published As
Publication number | Publication date |
---|---|
FI101831B (en) | 1998-08-31 |
FI101831B1 (en) | 1998-08-31 |
FI970712A0 (en) | 1997-02-20 |
EP1012629A1 (en) | 2000-06-28 |
AU6216998A (en) | 1998-09-09 |
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