WO1998016923A1 - Magnetic recording medium comprising a nickel aluminum or iron aluminum underlayer - Google Patents
Magnetic recording medium comprising a nickel aluminum or iron aluminum underlayer Download PDFInfo
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- WO1998016923A1 WO1998016923A1 PCT/US1997/002169 US9702169W WO9816923A1 WO 1998016923 A1 WO1998016923 A1 WO 1998016923A1 US 9702169 W US9702169 W US 9702169W WO 9816923 A1 WO9816923 A1 WO 9816923A1
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- WIPO (PCT)
- Prior art keywords
- underlayer
- magnetic recording
- recording medium
- magnetic
- seed layer
- Prior art date
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 120
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 title claims abstract description 64
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 title claims description 6
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 12
- 239000011651 chromium Substances 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- 229910000531 Co alloy Inorganic materials 0.000 claims description 23
- HBXWYZMULLEJSG-UHFFFAOYSA-N chromium vanadium Chemical compound [V][Cr][V][Cr] HBXWYZMULLEJSG-UHFFFAOYSA-N 0.000 claims description 19
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000000314 lubricant Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910000756 V alloy Inorganic materials 0.000 claims 2
- 239000000788 chromium alloy Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910015372 FeAl Inorganic materials 0.000 abstract description 14
- 230000008021 deposition Effects 0.000 abstract description 10
- 229910000943 NiAl Inorganic materials 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- 230000001747 exhibiting effect Effects 0.000 description 20
- 238000002441 X-ray diffraction Methods 0.000 description 14
- 239000002241 glass-ceramic Substances 0.000 description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 10
- 239000000395 magnesium oxide Substances 0.000 description 10
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 229910019222 CoCrPt Inorganic materials 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910001004 magnetic alloy Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000006112 glass ceramic composition Substances 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- QXWGVGIOMAUVTC-UHFFFAOYSA-N chromium cobalt platinum tantalum Chemical compound [Cr][Pt][Co][Ta] QXWGVGIOMAUVTC-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
Definitions
- the present invention relates to a magnetic recording medium, such as a thin film magnetic recording disk, and to a method of manufacturing the medium.
- the invention has particular applicability to a magnetic recording medium exhibiting low noise, high coercivity and high recording density.
- the linear recording density can be increased by increasing the coercivity of the magnetic recording medium.
- this objective can only be accomplished by decreasing the medium noise, as by maintaining very fine magnetically noncoupled grains.
- Medium noise is a dominant factor restricting increased recording density of high density magnetic hard disk drives.
- Medium noise in thin films is attributed primarily to inhomogeneous grain size and intergranular exchange coupling. Therefore, in order to increase linear density, medium noise must be minimized by suitable microstructure control .
- a conventional longitudinal recording disk medium is depicted in Fig. 1 and typically comprises a non-magnetic substrate 10 having sequentially deposited thereon a plating 11, such as a plating of amorphous nickel- phosphorous (NiP), and underlayer 12, such as chromium (Cr) or a Cr-alloy, a magnetic layer 13, typically comprising a cobalt (Co) alloy, and a protective overcoat 14, typically containing carbon.
- Conventional practices also comprise bonding a lubricant topcoat (not shown) to the protective overcoat.
- Underlayer 12, magnetic layer 13 and protective overcoat 14 are typically deposited by sputtering techniques.
- the Co alloy magnetic layer deposited by conventional techniques normally comprises polycrystallites epitaxially grown on the polycrystal Cr or Cr-alloy underlayer.
- the relevant magnetic properties such as coercivity (He), magnetic remanence (Mr) and coercive squareness (S * ) , which are critical to the performance of a Co base alloy magnetic thin film, depend primarily on the microstructure of the magnetic layer which, in turn, is influenced by the underlayer on which it is deposited.
- Conventional underlayers include Cr, molybdenum (Mo) , tungsten (W) , titanium (Ti) , chromium-vanadium (CrV) as well as Cr alloyed with various substitutional elements. It is recognized that underlayers having a fine grain structure are highly desirable, particularly for growing fine grains of hexagonal close packed (HCP) Co deposited thereon.
- NiAl nickel -aluminum
- Li-Lien Lee et al . "NiAl Underlayers For CoCrTa Magnetic Thin Films", IEEE Transactions on Magnetics, Vol. 30, No. 6, pp. 3951-3953, 1994.
- NiAl thin films are potential candidates as underlayers for magnetic recording media for high density longitudinal magnetic recording.
- Such a magnetic recording medium is schematically depicted in Fig. 2 and comprises substrate 20, NiAl underlayer 21 and cobalt alloy magnetic layer 22.
- the coercivity of a magnetic recording medium comprising an NiAl underlayer is too low for high density recording, e.g. about 2000 Oersteds.
- the depicted magnetic recording medium comprises substrate 30 having sequentially formed thereon Cr sub-underlayer 31, NiAl underlayer 32, Cr intermediate layer 33, and Co alloy magnetic layer 34. It was found, however, that such a magnetic recording medium is characterized by an underlayer structure exhibiting a (110) -dominant crystallographic orientation which does not induce the preferred (1120) -dominant crystallographic orientation in the subsequently deposited Co alloy magnetic layer and is believed to contribute to increased media noise. Li-Lien Lee et al .
- Li-Lien Lee et al recognized the undesirability of resorting to high deposition temperatures to obtain a (200) -dominant crystallographic orientation in the underlayer structure. It was subsequently reported that an underlayer structure exhibiting a (200) -dominant crystallographic orientation was obtained by depositing a magnesium oxide (MgO) seed layer using radio frequency (RF) sputtering.
- MgO magnesium oxide
- RF radio frequency
- Such a magnetic recording medium comprising a MgO seed layer and NiAl underlayer is schematically illustrated in Fig. 4 and comprises MgO seed layer 41 deposited on substrate 40, NiAl underlayer 42 deposited on MgO seed layer 41, and cobalt alloy magnetic layer 43 deposited on NiAl underlayer 42.
- Such a magnetic recording medium is not commercially viable from an economic standpoint, because sputtering systems in place throughout the industry making magnetic recording media with the conventional structure of magnetic layers epitaxially formed on underlayers are based upon direct current (DC) sputtering. Accordingly, RF sputtering an MgO seed layer is not economically viable .
- the objective of having a (200) crystallographic orientation in the underlayers is to induce (1120) crystallographic orientation in the Co alloy layers. Even through media comprising an MgO seed layer and NiAl underlayer have a (200) crystallographic orientation in the underlayer, it does not have a dominant (1120) crystallographic orientation in the Co alloy layer, according to Laughlin et al . , "The Control and Characterization of the Crystallographic Texture of the Longitudinal Thin Film Recording Media, " IEEE Transaction on Magnetics, Vol. 32, No. 5, September 1996, p. 3634. Laughlin et al .
- a magnetic recording medium with an underlayer structure comprising a small grain size NiAl or FeAl underlayer, formed by DC magnetron sputtering at low temperatures, e.g. at temperatures approximating room temperature, and exhibiting a (200) - dominant crystallographic orientation.
- An object of the present invention is a magnetic recording medium comprising an NiAl or FeAl underlayer, exhibiting (200) -dominant crystallographic orientation, and a Co alloy layer, exhibiting high coercivity and suitable for high density longitudinal magnetic recording.
- Another object of the present invention is a method of manufacturing a magnetic recording medium comprising an NiAl or FeAl underlayer, exhibiting (200) -dominant crystallographic orientation, and a Co alloy layer, exhibiting high coercivity and suitable for high density longitudinal magnetic recording.
- a magnetic recording medium comprising: a non-magnetic substrate; a surface oxidized NiP seed layer formed on the non- magnetic substrate; a Cr or Cr alloy sub-underlayer formed on the surface oxidized NiP seed layer; a NiAl or FeAl underlayer formed on the sub-underlayer; a Cr or Cr alloy intermediate layer formed on the underlayer; and a cobalt alloy magnetic layer formed on the intermediate layer.
- Fig. 1 schematically depicts a conventional magnetic recording medium structure.
- Fig. 2 schematically depicts a prior art magnetic recording medium containing an NiAl underlayer.
- Fig. 3 schematically depicts a prior art magnetic recording medium comprising a composite NiAl/Cr underlayer structure.
- Fig. 4 schematically depicts a prior art magnetic recording medium comprising an NiAl underlayer and MgO seed layer.
- Fig. 5 schematically illustrates a magnetic recording medium in accordance with the present invention.
- Fig. 6 shows X-ray diffraction curves of CoCrPtTa films deposited on different substructures utilizing glass ceramic substrates.
- Fig. 7 shows X-ray diffraction curves of CoCrPtTa films on different substructures utilizing glass ceramic substrates .
- Fig. 8 shows X-ray diffraction curve of 290A
- Fig. 9 shows X-ray diffraction curve of 340A CoCrPtTa / 80A CrV / 120A NiAl / 100A Cr deposited on surface oxidized NiP at room temperature (about 25 °C) utilizing glass ceramic substrates.
- Fig. 10 shows X-ray diffraction curves of 290A CoCrPtTa / 290A CrV and 290A CoCrPtTa / 90A CrV / 160A NiAl / 110A Cr deposited on surface oxidized NiP at about 250°C utilizing glass ceramic substrates.
- the present invention provides a magnetic recording medium enjoying the advantages derived from a small grain size NiAl or FeAl underlayer while achieving low medium noise and high coercivity suitable for high density longitudinal magnetic recording.
- a seed layer having an oxidized surface e.g., a seed layer comprising NiP, a Cr or Cr-alloy sub-underlayer directly on the oxidized NiP seed layer and formed under the NiAl or FeAl underlayer utilizing DC magnetron sputtering, thereby • obtaining an underlayer structure exhibiting a (200) - dominant crystallographic orientation, and a Cr or Cr- alloy intermediate layer on the NiAl or FeAl underlayer.
- the underlayer structure When a Cr or Cr-alloy sub-underlayer is deposited directly on the oxidized surface of the seed layer, the underlayer structure typically exhibits a small grain size and a (200) -dominant crystallographic orientation, even when sputtered at a low temperature. High coercivity is also achieved.
- the present invention further comprises providing a conventional protective overcoat, typically carbon or silicon oxide, and binding a lubricant top-coat thereon.
- a conventional protective overcoat typically carbon or silicon oxide
- the seed layer, composite underlayer structure comprising Cr sub-underlayer, NiAl or FeAl underlayer, and Cr intermediate layer, magnetic layer and carbon overcoat are typically sequentially sputter deposited on the substrate .
- the present invention enables the use of low temperature DC magnetron sputtered deposition of a sub- underlayer directly on an oxidized seed layer, such as a Cr or Cr alloy sub-underlayer on a surface oxidized NiP seed layer, thereby achieving an underlayer structure exhibiting a (200) -dominant crystallographic orientation and a small grain size.
- the oxidized seed layer can be formed by sputter depositing an NiP seed layer in an inert gas, such as argon (Ar) , followed by oxidation in an atmosphere comprising Ar and oxygen (0 2 ) .
- the seed layer can be sputter deposited in an atmosphere comprising Ar and 0 2 , wherein an oxidized seed layer is deposited.
- the thickness of the oxidized seed layer can range from about 200A to about 2,000A, e.g., from about 300A to about 600A; the thickness of the composite underlayer structure can range from about 200A to about 3,000A, e.g., from about 275A to about 1,600A; the thickness of a sub- underlayer, normally Cr or Cr-alloy, can typically range from about 40A to about 1,000A, e.g. about 50A to about lOOA; the NiAl underlayer can have a thickness of about 40A to about 3,000A, e.g.
- a magnetic recording medium in accordance with the present invention is schematically depicted in Fig. 5 and comprises non-magnetic substrate 50 with a plurality of sequentially deposited layers on each side thereof, consistent with conventional practices. According to the present invention, however, an initial surface oxidized seed layer 51A, 51B such as surface oxidized NiP, is formed on each side of nonmagnetic substrate 50.
- surface oxidized NiP seed layer 51A, 51B has a thickness of about 400A to about 500A.
- Surface oxidized NiP seed layer 51A, 51B can be formed by sputter depositing a layer of NiP in an inert gas atmosphere and subsequently oxidizing the surface of the deposited NiP seed layer in an atmosphere containing oxygen.
- the NiP seed layer can be sputter deposited in an oxygen- containing environment, whereby an oxidized seed layer is sputter deposited directly on non-magnetic substrate 50.
- a Cr or Cr- alloy sub-underlayer 52A, 52B is deposited directly on surface oxidized NiP seed layer 51A, 51B.
- Cr-containing sub-underlayer 52A, 52B has a thickness of about 70A to about 1,000A.
- NiAl (or FeAl) underlayer 53A, 53B is deposited on Cr-containing sub-underlayer 52A, 52B.
- NiAl underlayer has a thickness of about 40A to about 700A.
- Cr-containing sub-underlaying 52A, 52B can be sputtered deposited employing conventional DC magnetron sputtering at low temperatures, e.g., room temperatures to about 65°C, preferably about room temperature, i.e., 25°C, thereby obtaining an underlayer structure exhibiting a (200) - dominant crystallographic orientation with a fine grain size .
- An intermediate layer 54A, 54B such as a Cr or Cr- alloy, is sputter deposited on NiAl underlayer 53A, 53B.
- Cr-containing intermediate layer 54A, 54B has a thickness of about 80A to about 1,900A.
- the increased thickness of the NiAl underlayer and intermediate layer, e.g. 53A and 54A, provides increased coercivity, tested up to 2,600A.
- a magnetic alloy layer 55A, 55B typically a magnetic Co alloy, is deposited on intermediate layer 54A, 54B.
- (200) -dominant crystallographic orientation with respect to an underlayer and intermediate layer denotes that the ratio of the number of underlayer and intermediate layer grains exhibiting a (200) - crystallographic orientation to the number of underlayer and intermediate layer grains exhibiting non (200) - crystallographic orientations is greater than 1, as determined by X-ray diffraction curves.
- the expression (110) or (112) -dominant crystallographic orientation denotes that the ratio of the number of underlayer and intermediate layer grains exhibiting a (110) or (112) -crystallographic orientation to the number of underlayer and intermediate layer grains exhibiting non (110) or (112)- crystallographic orientation is greater than 1 as determined by X-ray diffraction curves.
- (1120) - dominant crystallographic orientation in the context of a Co-alloy magnetic layer denotes that the number of Co- alloy grains exhibiting a (1120) -crystallographic orientation to the number of Co-alloy grains exhibiting
- (1011) - and (1010) -crystallographic orientations is greater than 1, as determined by X-ray diffraction curves .
- Magnetic recording media of embodiments of the present invention were prepared comprising cobalt- chromium-platinum-tantalum (CoCrPtTa) magnetic layers on different intermediate layers, underlayer structures and seed layers, deposited using in-line DC magnetron sputtering. Glass-ceramic substrates were employed. The structures of the intermediate layers, underlayers, and seed layers, underlayer deposition temperatures and dominant crystallographic orientations of the underlayers and intermediate layers are set forth in Table 1. TABLE 1
- Table 1 summarizes the results of X-ray diffraction measurements of CoCrPtTa magnetic layers deposited on different intermediate layer, underlayer, and seed layer structures at different temperatures. The X-ray diffraction curves are shown in Figs. 6, 7 and 8. Table 1 illustrates the dependance of the crystallographic orientation of the intermediate layer and underlayer on structure, deposition temperature and seed layer.
- Table 2 shows the X-ray diffraction intensity factors of bulk Cr published by JCPDS- International Center for Diffraction Data. It is apparent that the intensity factor of (200) is only one-sixth that of (110) . Accordingly, if (200) and (110) have peaks of similar intensity on X-ray diffraction curves, (200) is the dominant texture .
- Fig. 6 the 290A CoCrPtTa / 1700A CrV / 650A NiAl (top curve) and 290A CoCrPtTa / 1900A CrV / 650A NiAl (middle curve) were deposited at about 250°C on surface oxidized NiP and directly on a glass ceramic substrate, respectively.
- the 290A CoCrPtTa / 1900A CrV / 650A NiAl / 950A Cr (bottom curve) were deposited at about 60°C on surface oxidized NiP.
- the 290A CoCrPtTa / 1900A CrV / 650A NiAl / 950A Cr (top curve) and the 290A CoCrPtTa / 1900A CrV were deposited at room temperature (about 25 °C) on surface oxidized NiP and directly on a glass ceramic substrate, respectively.
- Fig. 9 is an X-ray diffraction pattern of 340A CoCrPtTa / 80A CrV / 120A NiAl / 100A Cr deposited on surface-oxidized NiP seed layer at room temperature (about 25°C) using DC magnetron sputtering.
- the pattern exhibits a very strong Co alloy (1120) peak. It is apparent that the desirable Co alloy (1120) texture epitaxially grown on underlayer and intermediate layer (200) texture was obtained according with the present invention.
- Table 3 compares magnetic properties of a conventional magnetic recording medium comprising a CoCrPtTa/CrV structure with a medium fabricated according to the present invention.
- the magnetic properties were measured with a remanent moment magnetometer (RMM) .
- Her (remanent coercivity) and Mrt (magnetic remanance x film thickness) of the media are reported.
- the CoCrPtTa and CrV layers of both samples were deposited under identical conditions, including target power, pallet speed, Ar pressure and CrV and CoCrPtTa film thickness. Both samples were deposited at room temperature.
- Signal -to- medium noise ratio (SNR) was tested through a Guzik 1601 read-write analyzer connected to a Guzik 1701 spinstand.
- a composite head with an inductive element for writing and a magnetoresistive element for reading was used.
- the medium noise was measured by integrating the noise power spectrum over a bandwidth of 40 MHz and subtracting off DC noise and noise from electronics at the linear density of 180 thousand of flux reversals per inch (KFCI) .
- the data in Table 3 reveal that magnetic recording media having a CrV intermediate layer and a composite underlayer structure comprising NiAl and Cr-containing sub-underlayers deposited directly on surface-oxidize NiP seed layers exhibit high SNR and a coercivity enhancement greater than 600 Oe vis-a-vis conventional magnetic recording media.
- All CoCrPtTa films, intermediate layers, underlayers and seed layers were deposited on Ohara glass substrates at about 10 mTorr of Ar pressure utilizing DC magnetron sputtering without substrate bias.
- the NiP films were sputter deposited and subsequently oxidized in 5 mTorr of an atmosphere of 20% oxygen and 80% argon by volume for about 30 seconds at a temperature of about 25 °C. Subsequently the underlayers and magnetic layers were sequentially sputtered deposited.
- the film compositions are shown in Table 4.
- magnetic recording media having a structure comprising a Cr-containing intermediate layer, NiAl underlayer and Cr-containing sub-underlayer, exhibits a coercivity much greater than magnetic recording media having a single underlayer.
- magnetic recording media exhibiting extremely high coercivity e.g. about 2500 and about 3200 Oe and low noise, are obtained by depositing a Co alloy magnetic layer on a composite structure comprising Cr-containing intermediate layer, NiAl underlayer and Cr-containing sub-underlayer deposited on a surface oxidized NiP seed layer.
- the deposition of a Cr-containing sub-underlayer deposited directly on a surface oxidized NiP seed layer yields a (200) -dominant crystallographic underlayer orientation, even at room temperature, with DC magnetron sputtering.
- the Co alloy layer can have a (1120) -dominant crystallographic orientation.
- the substrates employed in the present invention can advantageously comprise any of various substrates conventionally employed in the manufacture of magnetic recording media, including various glass or glass-ceramic materials.
- Conventional glass-ceramic materials are typically formed by a surface treatment to form a thin crystallized layer of ceramic thereon.
- Some forms of conventional glass-ceramic material are referred to as "Ohara glass . "
- the intermediate layer and sub-underlayer of the present invention can comprise any Cr-containing alloy used as underlayer conventionally employed in the manufacture of magnetic recording media, including, but not limited to, Cr, CrV, CrTi, CrMo.
- the magnetic layer of the present invention can comprise any magnetic alloy conventionally employed in the production of magnetic recording media.
- Such alloys include, but are not limited to, Co-based alloys such as CoCr, CoCrTa, CoNiCr, CoCrPtTa, CoCrPt, CoNiPt, CoNiCrPt and CoCrPtB .
- the thickness of the magnetic layer is consistent with the thickness of magnetic layers of conventional magnetic recording media.
- a protective overcoat can be deposited on the magnetic layer by any conventional means, such as sputtering.
- Protective overcoats can comprise zirconium oxide (Zr0 2 ) , carbon, including hydrogenated carbon, silicon carbide (SiC) , or a carbon nitride (CN) .
- the protective overcoat is provided in a thickness suitable to protect the underlying layers.
- An overcoat having a thickness of about 50A to about 300A, such as about 100A to 200A has been found suitable.
- a layer of a lubricant can be applied on and bonded to the overcoat .
- the lubricant topcoat can be provided in any suitable thickness.
- the present invention is not limited to the specific examples disclosed herein or the particular materials previously exemplified or mentioned.
- the magnetic recording media of the present invention can comprise any of various types of glass or glass-ceramic substrates, and various types of magnetic alloy layers, including various Co-based alloy magnetic layers.
- the magnetic recording media of the present invention enjoy utility in various applications, particularly applications wherein high density is required, such as a magnetic rigid disk medium for longitudinal recording. Only certain embodiments of the invention and but a few examples of its versatility are shown and described in the present disclosure. It is to be understood that the invention is capable of use in various other combinations and environments and is capable of changes or modifications within the scope of the inventive concept as expressed herein.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51830398A JP3983813B2 (en) | 1996-10-17 | 1997-02-26 | Magnetic recording medium comprising a nickel-aluminum or iron-aluminum underlayer |
US08/945,084 US6010795A (en) | 1997-02-26 | 1997-02-26 | Magnetic recording medium comprising a nickel aluminum or iron aluminum underlayer and chromium containing intermediate layer each having (200) dominant crystalographic orientation |
DE19782066T DE19782066T1 (en) | 1996-10-17 | 1997-02-26 | A magnetic recording medium comprising a nickel-aluminum or iron-aluminum underlayer |
GB9908669A GB2334134B (en) | 1996-10-17 | 1997-02-26 | Magnetic recording medium comprising a nickel aluminum or iron aluminum underlayer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2888296P | 1996-10-17 | 1996-10-17 | |
US60/028,882 | 1996-10-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998016923A1 true WO1998016923A1 (en) | 1998-04-23 |
Family
ID=21846040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/002169 WO1998016923A1 (en) | 1996-10-17 | 1997-02-26 | Magnetic recording medium comprising a nickel aluminum or iron aluminum underlayer |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP3983813B2 (en) |
KR (1) | KR100456166B1 (en) |
DE (1) | DE19782066T1 (en) |
GB (1) | GB2334134B (en) |
WO (1) | WO1998016923A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100369284B1 (en) * | 1999-10-28 | 2003-01-24 | 인터내셔널 비지네스 머신즈 코포레이션 | Trilayer seed layer structure for spin valve sensor |
SG97791A1 (en) * | 1999-05-13 | 2003-08-20 | Inst Data Storage | High coercivity cobalt based alloy longitudinal recording media and method for its fabrication |
US6908689B1 (en) * | 2001-12-20 | 2005-06-21 | Seagate Technology Llc | Ruthenium-aluminum underlayer for magnetic recording media |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999040575A1 (en) * | 1998-02-10 | 1999-08-12 | Seagate Technology Llc | Magnetic recording medium with patterned substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833020A (en) * | 1987-01-29 | 1989-05-23 | Hitachi, Ltd. | Magnetic recording medium |
US4900397A (en) * | 1987-08-08 | 1990-02-13 | Basf Aktiengesellschaft | Production of magnetic recording media |
US5302434A (en) * | 1992-08-07 | 1994-04-12 | International Business Machines Corporation | Magnetic recording disk for contact recording |
-
1997
- 1997-02-26 KR KR10-1999-7003335A patent/KR100456166B1/en not_active IP Right Cessation
- 1997-02-26 JP JP51830398A patent/JP3983813B2/en not_active Expired - Lifetime
- 1997-02-26 DE DE19782066T patent/DE19782066T1/en not_active Withdrawn
- 1997-02-26 GB GB9908669A patent/GB2334134B/en not_active Expired - Fee Related
- 1997-02-26 WO PCT/US1997/002169 patent/WO1998016923A1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4833020A (en) * | 1987-01-29 | 1989-05-23 | Hitachi, Ltd. | Magnetic recording medium |
US4900397A (en) * | 1987-08-08 | 1990-02-13 | Basf Aktiengesellschaft | Production of magnetic recording media |
US5302434A (en) * | 1992-08-07 | 1994-04-12 | International Business Machines Corporation | Magnetic recording disk for contact recording |
Non-Patent Citations (1)
Title |
---|
IEEE TRANSACTIONS ON MAGNETICS, Volume 31, No. 6, issued November 1995, LEE et al., "Effects of Cr Intermediate Layers on CoCrPt Thin Film Media on NiA1 Underlayers", pages 2728-2730. * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG97791A1 (en) * | 1999-05-13 | 2003-08-20 | Inst Data Storage | High coercivity cobalt based alloy longitudinal recording media and method for its fabrication |
KR100369284B1 (en) * | 1999-10-28 | 2003-01-24 | 인터내셔널 비지네스 머신즈 코포레이션 | Trilayer seed layer structure for spin valve sensor |
US6908689B1 (en) * | 2001-12-20 | 2005-06-21 | Seagate Technology Llc | Ruthenium-aluminum underlayer for magnetic recording media |
Also Published As
Publication number | Publication date |
---|---|
KR20000049231A (en) | 2000-07-25 |
JP2001503180A (en) | 2001-03-06 |
GB2334134A (en) | 1999-08-11 |
JP3983813B2 (en) | 2007-09-26 |
GB2334134B (en) | 2000-10-25 |
GB9908669D0 (en) | 1999-06-09 |
KR100456166B1 (en) | 2004-11-09 |
DE19782066T1 (en) | 1999-09-09 |
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