WO1998007218A1 - Laser a cavite verticale et a emission par la surface muni d'une jonction a effet tunnel - Google Patents

Laser a cavite verticale et a emission par la surface muni d'une jonction a effet tunnel Download PDF

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Publication number
WO1998007218A1
WO1998007218A1 PCT/US1997/012147 US9712147W WO9807218A1 WO 1998007218 A1 WO1998007218 A1 WO 1998007218A1 US 9712147 W US9712147 W US 9712147W WO 9807218 A1 WO9807218 A1 WO 9807218A1
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Prior art keywords
vcsel
optical cavity
tunnel junction
mirror
junction interface
Prior art date
Application number
PCT/US1997/012147
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English (en)
Inventor
Vijaysekhar Jayaraman
Jeffrey W. Scott
Original Assignee
W.L. Gore & Associates, Inc.
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Publication date
Application filed by W.L. Gore & Associates, Inc. filed Critical W.L. Gore & Associates, Inc.
Priority to AU36006/97A priority Critical patent/AU3600697A/en
Publication of WO1998007218A1 publication Critical patent/WO1998007218A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

Definitions

  • This invention relates to vertical cavity surface emitting lasers (VCSELs), and more particularly to VCSELs having a tunnel junction interface and two n-type contacts or an intracavity contact.
  • VCSELs vertical cavity surface emitting lasers
  • a VCSEL is a semiconductor laser consisting of a semiconductor layer of optically active material, such as gallium arsenide or indium gallium arsenide, sandwiched between highly-reflective layers of metallic material, dielectric material, epitaxially-grown semiconductor material or combinations thereof, the layers forming a mirror stack. Conventionally, one of the mirror stacks is partially reflective so as to pass a portion of the coherent light built up in the resonant optical cavity formed by the mirror stack/active layer sandwich. Laser structures require optical confinement and carrier confinement to achieve efficient conversion of pumping electrons to stimulated photons. A semiconductor may lase if it achieves population inversion in the energy bands of the active material. The standing wave in the optical cavity has a characteristic cross-section giving rise to an electromagnetic mode.
  • optically active material such as gallium arsenide or indium gallium arsenide
  • a desirable electromagnetic mode is the single fundamental mode, for example, the HEn mode of a cylindrical waveguide.
  • a single mode signal from a VCSEL is easily coupled into an optical fiber, has low divergence, and is inherently single frequency in operation.
  • All semiconductor lasers rely on stimulated recombination of electrons and holes in the depletion region of a p-n junction As a result, most such lasers require electrical contacts to both p and n regions, to supply both holes and electrons for recombination Recently, an edge-emitting semiconductor laser with two n-type contacts was fabricated This is described in A R Sugg, et al , "n-p-(p+-n+)-n Al y Ga Ly As-GaAs-lnxGai-xAs quantum-well laser with p+-n+ GaAs-lnGaAs tunnel contact on n-GaAs," Applied Physics Letters 62(20), 17 May 1993, pp 2510-2512 In S
  • a vertical cavity surface emitting laser (VCSEL) constructed according to the invention includes a pair of mirror stacks with an optical cavity including an active region disposed between the mirror stacks
  • a tunnel junction interface between an n-doped layer of GaAs and a p-doped layer of GaAs is incorporated in the optical cavity, or in one of the mirror stacks adjacent the optical cavity
  • the tunnel junction interface effectively converts n carriers to p carriers, which eliminates the need for a p-type contact
  • the p-type contact required in a conventional VCSEL can be eliminated so that the VCSEL according to the invention can be energized using a pair of n-type contacts
  • the advantages of having two n-type contacts, rather than a p-type contact and an n-type contact are lower electrical resistance and lower optical loss.
  • one of the mirror stacks can be undoped. This further reduces optical loss
  • An annular resistive layer can be incorporated into the VCSEL for current confinement.
  • the VCSEL can be electrically pumped to emit coherent electromagnetic radiation having a wavelength in a range from 1250 nm to 1650 nm.
  • FIG. 1 shows a conventional VCSEL having a typical doping profile
  • FIG. 2 shows an implant-constricted VCSEL having a tunnel junction interface and with current driven through both mirror stacks according to a first embodiment of the invention
  • FIG. 3 shows an oxide-constricted VCSEL having a tunnel junction interface and with current driven through both mirror stacks according to a second embodiment of the invention
  • FIG. 4 shows an oxide-constricted VCSEL having a tunnel junction interface and with an intracavity contact through which current bypasses one mirror stack according to a third embodiment of the invention.
  • a conventional VCSEL having a typical doping profile includes an n-substrate 12.
  • An n-doped mirror stack 14 is fabricated above the n-substrate.
  • An optical cavity 16 including an active region is fabricated above the n-doped mirror stack.
  • the optical cavity includes an n- doped layer 18 confronting the n-doped mirror stack, a quantum well region 20 confronting n-doped layer 18, and a p-doped layer 22 confronting quantum well region 20.
  • a p-doped mirror stack 24 is disposed above optical cavity 16.
  • a p- metal contact 26 is applied to the top surface of p-doped mirror stack 24.
  • An n- metal contact 28 is applied to the bottom surface of the n-substrate.
  • a vertical cavity surface emitting laser (VCSEL) constructed on a semiconductor substrate according to the principles of the invention includes a bottom mirror stack disposed above the substrate, an optical cavity including an active region disposed above the bottom mirror stack, and a top mirror stack disposed above the optical cavity.
  • the optical cavity including the active region presents a central vertical axis.
  • Two metallized electrodes contact n-type material of the VCSEL.
  • a tunnel junction interface between an n-doped layer and a p-doped layer is incorporated within the optical cavity or in the period of either mirror stack adjacent the optical cavity.
  • the tunnel junction interface includes two layers of GaAs, one being p-doped and the other being n-doped.
  • the tunnel junction interface is part of the same epitaxial growth as the optical cavity or the mirror stacks.
  • Conventional VCSELs have an n-type contact and a p-type contact, as shown in FIG. 1.
  • the tunnel junction interface taught herein effectively converts n carriers to p carriers, which eliminates the need for a p-type contact.
  • the VCSEL is able to include a second n-type contact, rather than the p-type contact suggested by conventional techniques, and a thin p-doped
  • a second n-type contact as taught herein, rather than a p-type contact
  • a second n-type contact rather than a p-type contact
  • one of the mirror stacks can be undoped. This further reduces optical loss in the VCSEL.
  • Such VCSEL has lower electrical resistance than the conventional VCSEL structure shown in FIG. 1 because ohmic contacts to n-type material have lower resistance than contacts to p-type material. Conduction through an n-type mirror stack is better than conduction through a p-type mirror stack, and the absence of p-type dopants in such conducting mirror stack reduces optical loss.
  • a VCSEL is implant-constricted for current confinement.
  • Two metallized contacts of n-type material are used in the VCSEL.
  • the optical cavity includes a tunnel junction interface to convert electrons into holes.
  • such an implant- constricted VCSEL includes on a GaAs substrate 32 a bottom n-type mirror stack 34 disposed above the substrate, an optical cavity 36 including an active region and disposed above the bottom mirror stack, and a top n-type mirror stack 38 disposed above the optical cavity.
  • the bottom and top n-type mirror stacks are both fabricated from a system selected from (a) alternating layers of GaAs and AIAs, or (b) alternating layers of GaAs and AIGaAs
  • Both bottom n- type mirror stack 34 and top n-type mirror stack 38 are doped at less than 5 x 10 18 /cm 3
  • Optical cavity 36 preferably includes InGaAsP and is wafer fused to bottom n-type mirror stack 34
  • the InGaAsP optical cavity includes an n-cladding layer 40 (consisting of InGaAsP and InP) disposed above bottom mirror stack 34, quantum wells 42 above the n-cladding layer, and a p-cladding layer 44 (consisting of InGaAsP and InP) disposed above the quantum wells
  • a GaAs layer 46 which is p- doped at 5 x 10 17 /cm 3 , is fabricated above the p-cladding layer 44 to aid conversion of n
  • the tunnel junction interface can be formed in the mirror period of either mirror stack that is adjacent the optical cavity
  • top n-type mirror stack 38 is wafer fused to the InGaAsP optical cavity 36
  • Protons (H+) are implanted along an annular section 56 of top n- type mirror stack 38 at tunnel junction interface 48
  • the annular section is radially displaced from and centered about the central vertical axis 58 of the optical cavity
  • Annular implant section 56 has a higher electrical resistivity than other parts of top n-type mirror stack 38 and constricts current flow to within the annular section
  • a first n-metal contact 60 is applied to the n-type mirror stack 38.
  • a second n-metal contact 62 is applied to substrate 32.
  • Electrode current can be driven through both the top mirror stack and the bottom mirror stack with first and second electrodes 60, 62, which contact n-type material of the VCSEL.
  • the VCSEL shown in FIG. 2 is electrically powered to emit coherent electromagnetic radiation having a wavelength in a range from 1250 nm to 1650 nm.
  • a VCSEL is oxide-constricted for current confinement.
  • Two n-metal electrodes contact n- type material of the VCSEL.
  • a tunnel junction interface is incorporated into the VCSEL to convert electrons to holes.
  • the two layers of the tunnel junction interface are composed of epitaxially-grown GaAs, one being p-doped and the other being n-doped.
  • the tunnel junction interface effectively converts n carriers to p carriers, which eliminates the need for a p-type contact.
  • the VCSEL is able to include a second n-type contact, rather than the p- type contact suggested by conventional techniques.
  • the advantages of having a second n-type contact rather than a p-type contact include a lower electrical resistance and lower optical loss for the VCSEL.
  • such a VCSEL includes on a semiconductor substrate 66 a bottom n-type mirror stack 67 formed above the substrate, an optical cavity 68 including an active region presenting a central vertical axis 70 and disposed above the bottom mirror stack, and a top n-type mirror stack 72 disposed above optical cavity 68.
  • the top n-type mirror stack 72 and the bottom n-type mirror stack 67 are each fabricated from a system of (a) alternating layers of GaAs and AIGaAs, or (b) alternating layers of GaAs and AIAs. Both the bottom n-type mirror stack and the top n-type mirror stack have less than 5 x 10 18 /cm 3 doping.
  • Optical cavity 68 preferably includes InGaAsP.
  • Top n-type mirror stack 72 and bottom n-type mirror stack 67 are each wafer fused to optical cavity 68.
  • the InGaAsP optical cavity 68 includes an n-cladding layer 74 (consisting of InGaAsP and InP), quantum wells 76 above the n-cladding layer, and a p-cladding layer 78 (consisting of InGaAsP and InP) disposed above the quantum wells.
  • a GaAs layer 80 which is p-doped at 5 x 10 17 /cm 3 , is fabricated above p-cladding layer 78 to aid conversion of n carriers to p carriers.
  • a tunnel junction interface 82 includes two epitaxially-grown layers of GaAs in confronting relationship.
  • One layer 84 is a .02 mm layer, which is n+ doped at greater than 1 x 10 19 /cm 3 .
  • the other layer 86 is a .02 mm layer, which is p+ doped at greater than 1 x 10 19 /cm 3 .
  • Tunnel junction interface 82 is positioned at a minimum of the standing wave optical intensity profile 88.
  • a thin AIGaAs oxidation layer 90 is formed as an annular-shaped section in the optical cavity. The annular-shaped section is radially-displaced from and centered about central vertical axis 70. This thin AIGaAs oxidation layer has a higher electrical resistivity than p-doped GaAs layer 80 and constricts current to move through annular section 90.
  • a first metal contact 92 is applied to top n-type mirror stack 72 and a second metal contact 94 is applied to n-type GaAs substrate 66. Current is driven through both the top and bottom mirror stacks using first and second metal contacts 92, 94.
  • the VCSEL shown in FIG. 3 preferably emits coherent electromagnetic radiation at a wavelength in a range from 1250 nm to 1650 nm.
  • the tunnel junction interface can be located in a mirror period adjacent the optical cavity in either the top or bottom mirror stacks.
  • a VCSEL incorporates a tunnel junction interface and two n-type contacts to n-material in the VCSEL.
  • one of the n-type contacts is made to n-type material within the optical cavity.
  • Current bypasses one of the bottom or top mirror stacks through this intracavity contact.
  • one of the mirror stacks can be undoped.
  • such a VCSEL includes on an n-GaAs semiconductor substrate 98 a bottom n-type mirror stack 100 fabricated above the n-GaAs substrate.
  • An optical cavity 102 including an active region is disposed above bottom n-type mirror stack 100 and presents a central vertical axis 103.
  • An undoped top mirror stack 104 is fabricated above optical cavity 102.
  • Optical cavity 102 includes an n-cladding layer 106 of InGaAsP, doped at 2 x 10 18 /cm 3 .
  • a quantum well region 108 is formed beneath n-cladding layer 106.
  • a p-cladding layer 110 of InGaAsP, doped at 3 x 10 17 /cm 3 is disposed beneath quantum well region 108.
  • a layer 112 of GaAs which is p-doped at 5 x 10 17 /cm 3 , is disposed in confronting relationship beneath p-cladding layer 110 to aid conversion of n carriers to p carriers.
  • a thin oxidation layer 114 such as AIGaAs, shaped in the form of an annulus, is disposed beneath and in confronting relationship with p- doped layer 112.
  • Annular oxidation layer 114 is radially-displaced from and centered about central vertical axis 103.
  • the thin annular oxidation layer has a higher electrical resistance than other parts of the optical cavity.
  • Annular- shaped oxidation layer 114 confines current through the annulus in the optical cavity. Current confinement can also be accomplished in this embodiment by proton implantation.
  • a tunnel junction interface 116 between two confronting epitaxially- grown layers of GaAs is disposed in the optical cavity beneath annular oxidation layer 114.
  • the two confronting layers are a first .02 mm layer 118, which is p-doped greater than 1 x 10 19 /cm 3 , and a second .02 mm layer 120, which is n-doped greater than 1 x 10 19 /cm 3 .
  • Tunnel junction interface 116 confronts n-type bottom mirror stack 100.
  • a reverse conducting tunnel junction requires high p and n doping levels for a short distance. This has the potential to introduce loss. This loss is largely avoided by placing tunnel junction interface 116 at a minimum in the standing wave of the optical cavity.
  • a first n-metal electrode 122 bypasses the bottom and top mirror stacks and makes contact with n-cladding layer 106 in optical cavity 102.
  • the VCSEL shown in FIG. 4 can be electrically pumped using first and second metal contacts 122, 124 to emit coherent electromagnetic radiation having a wavelength in a range from 1250 nm to 1650 nm.
  • a VCSEL constructed according to the principles of the invention has a lower electrical resistance than a conventional VCSEL because ohmic contacts to n-type material have lower resistance than contacts to p-type material. Conduction through an n-type mirror stack is better than conduction through a p-type mirror stack, and the absence of p-type dopants in the n-type mirror stack reduces optical loss.
  • a tunnel junction interface with two n-type mirror stacks reduces optical loss as compared to a conventional VCSEL having a p-type mirror and an n-type mirror.
  • using a tunnel junction and an intracavity contact with one n-type mirror also reduces optical loss according to the invention because the other mirror can be undoped.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser à cavité verticale et à émission par la surface (VCSEL), comprenant un empilement de miroirs inférieur placé sur un substrat semi-conducteur, une cavité optique comportant une zone active placée sur l'empilement de miroirs inférieur, et un empilement de miroirs supérieur placé sur la cavité optique. Une interface jonction à effet tunnel située entre une couche dopée N et une couche dopée P de GaAs, destinée à convertir des électrons en trous, est incorporée dans la cavité optique ou dans la période de l'un des empilements de miroirs adjacents à la cavité optique. L'interface jonction à effet tunnel convertit de manière efficace les porteurs N en porteurs P, ce qui permet d'éliminer la nécessité d'un contact de type P. En conséquence, le VCSEL est susceptibe de comporter un deuxième contact de type N, plutôt qu'un contact de type P comme c'est le cas dans les techniques classiques, et une couche mince de GaAs dopée P. Les avantages que présente le recours à un deuxième contact de type N par rapport à un contact de type P, comprennent une résistance électrique et une perte optique moindres pour le VCSEL. Lorsque cette invention a pour mode de réalisation un VCSEL doté d'un contact à intracavité, l'un des miroirs peut être non dopé, ce qui réduit encore la perte optique du VCSEL. Ce VCSEL peut être alimenté par pompe électrique au moyen des premier et deuxième contacts liés aux parties de matériau N du VCSEL, en vue d'émettre un rayonnement électrique cohérent d'une longueur d'onde de l'ordre de 1250 à 1650 nm.
PCT/US1997/012147 1996-08-09 1997-07-14 Laser a cavite verticale et a emission par la surface muni d'une jonction a effet tunnel WO1998007218A1 (fr)

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AU36006/97A AU3600697A (en) 1996-08-09 1997-07-14 Vertical cavity surface emitting laser with tunnel junction

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US71119096A 1996-08-09 1996-08-09
US08/711,190 1996-08-09

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Cited By (31)

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EP0869593A1 (fr) * 1997-04-03 1998-10-07 Alcatel Laser semiconducteur à émission de surface
WO1998056084A1 (fr) * 1997-06-05 1998-12-10 Siemens Aktiengesellschaft Composant semi-conducteur optoelectronique
DE19954343A1 (de) * 1999-11-11 2001-05-23 Infineon Technologies Ag Oberflächenemittierende Laserdiode
WO2001063708A2 (fr) * 2000-02-24 2001-08-30 Bandwidth9, Inc. Appareil a cavite verticale a jonction a effet tunnel
WO2001093387A2 (fr) * 2000-05-31 2001-12-06 Sandia Corporation Laser emetteur a surface de cavite verticale a longueur d'ondes elevee
WO2002017361A1 (fr) * 2000-08-22 2002-02-28 The Regents Of The University Of California Proced d'ouverture de lasers a cavite verticale et a emission par la surface (vscels)
WO2002045223A1 (fr) * 2000-11-29 2002-06-06 Optowell Co., Ltd. Laser a cavite verticale emettant par la surface, a semi-conducteur a compose de nitrure
WO2002075868A2 (fr) * 2001-03-15 2002-09-26 Ecole Polytechnique Federale De Lausanne Laser a cavite verticale et a emission par surface, et procede de fabrication d'un tel laser
US6542531B2 (en) * 2001-03-15 2003-04-01 Ecole Polytechnique Federale De Lausanne Vertical cavity surface emitting laser and a method of fabrication thereof
GB2385986A (en) * 2001-12-31 2003-09-03 Agilent Technologies Inc Optoelectronic device
US6631154B2 (en) 2000-08-22 2003-10-07 The Regents Of The University Of California Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
US6720585B1 (en) 2001-01-16 2004-04-13 Optical Communication Products, Inc. Low thermal impedance DBR for optoelectronic devices
WO2004049461A2 (fr) * 2002-11-27 2004-06-10 Vertilas Gmbh Procede pour realiser un contact a effet tunnel enfoui dans un laser semi-conducteur emettant par la surface
EP1460741A1 (fr) * 2003-03-20 2004-09-22 Xerox Corporation Diode laser
EP1488484A2 (fr) * 2002-03-25 2004-12-22 Optical Communication Products, Inc. Laser a cavite verticale hybride comprenant une interface enterree
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US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US6931042B2 (en) 2000-05-31 2005-08-16 Sandia Corporation Long wavelength vertical cavity surface emitting laser
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7170917B2 (en) 2001-02-15 2007-01-30 Vercilas Gmbh Surface-emitting semiconductor laser
WO2008089728A2 (fr) * 2007-01-23 2008-07-31 Osram Opto Semiconductors Gmbh Puce optoélectronique
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US7860143B2 (en) 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells
EP3540879A1 (fr) * 2018-03-15 2019-09-18 Koninklijke Philips N.V. Dispositif laser à cavité verticale émettant par la surface et comportant une jonction a tunnel
WO2022097513A1 (fr) * 2020-11-04 2022-05-12 ソニーグループ株式会社 Élément laser à émission de surface de type résonateur vertical et procédé de fabrication d'un élément laser à émission de surface de type résonateur vertical
DE102021116861A1 (de) 2021-06-30 2023-01-05 Trumpf Photonic Components Gmbh Verfahren zur Herstellung eines Halbleiterbauteil und solch ein Halbleiterbauteil
WO2024179923A1 (fr) * 2023-02-27 2024-09-06 Trumpf Photonic Components Gmbh Vcsel pour génération de lumière laser

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