WO1998002444A1 - Process for the preparation of dialkylaluminum alkoxide - Google Patents
Process for the preparation of dialkylaluminum alkoxide Download PDFInfo
- Publication number
- WO1998002444A1 WO1998002444A1 PCT/KR1997/000102 KR9700102W WO9802444A1 WO 1998002444 A1 WO1998002444 A1 WO 1998002444A1 KR 9700102 W KR9700102 W KR 9700102W WO 9802444 A1 WO9802444 A1 WO 9802444A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alkoxide
- aluminum
- isopropoxide
- dialkylaluminum
- trialkylaluminum
- Prior art date
Links
- 150000004703 alkoxides Chemical class 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 15
- 238000002360 preparation method Methods 0.000 title description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- -1 aluminum alkoxide Chemical class 0.000 claims abstract description 11
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- HJYACKPVJCHPFH-UHFFFAOYSA-N dimethyl(propan-2-yloxy)alumane Chemical group C[Al+]C.CC(C)[O-] HJYACKPVJCHPFH-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- QYRVKEFNJZPMKU-UHFFFAOYSA-N diethyl(propan-2-yloxy)alumane Chemical compound CC(C)[O-].CC[Al+]CC QYRVKEFNJZPMKU-UHFFFAOYSA-N 0.000 claims description 6
- PUSCJUIYJNKDRK-UHFFFAOYSA-N dimethylalumanylium;2-methylpropan-2-olate Chemical compound C[Al](C)OC(C)(C)C PUSCJUIYJNKDRK-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
- C07F5/068—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage) preparation of alum(in)oxanes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
Definitions
- the present invention relates to a novel process for preparing a dialkylaluminum alkoxide by reacting a trialkylaluminum with an aluminum alkoxide at or near ambient temperature.
- a dialkylaluminum alkoxide which may be represented by R ⁇ IOR 2 wherein R and R 2 are each independently a C ⁇ _ 10 alkyl group was recently reported to be useful in preparing an aluminum oxide film by a thermal CVD (chemical vapor deposition) process because it has a sufficiently high vapor pressure at ambient temperature.
- the vapor pressure of dimethylaluminum isopropoxide is 1.5 mHg at 38 °C. Also it is not spontaneously inflammable in air, differently from trialkylaluminum.
- Dialkylaluminum alkoxide ⁇ have been conventionally prepared by reacting trialkylaluminu s with alcohols, as is described, e.g., by Paul S. Coan, et al . in Organometallics , 8 . , 2724 (1989).
- Dimethylaluminum isopropoxide for example, is prepared by reacting trimethylaluminum with isopropyl alcohol as follows:
- the above method has the disadvantages that the reaction must be conducted at a very low temperature, e.g., about -78 °C, in the presence of an excess amount of rigorously dry solvent in order to control the large reaction heat released and that methane generated as a byproduct must be vented. Therefore, in a large-scale production of the dialkylaluminum alkoxide, the above process necessarily requires equipments for cooling the reacting mixture and for removing methane produced.
- a process for preparing a dialkylaluminum alkoxide represented by R 1 2 A10R 2 wherein R 1 and R 2 are each independently a C 1 _ 10 alkyl group which comprises reacting a trialkylaluminum with an aluminum alkoxide at or near ambient temperature .
- dialkylaluminum alkoxide compound is prepared by reacting a trialkylaluminum with an aluminum alkoxide.
- the above reaction may be shown as follows:
- R 1 and R 2 are each independently a C,_ 10 alkyl group.
- the trialkylaluminum is reacted with the aluminum alkoxide in a molar ratio of 2.2:1 to 1.8: 1, and the reaction is conducted at or near ambient temperature, suitably at a temperature ranging from 0 to 60 °C, preferably 0 to 25 °C.
- the above reaction may be preferably conducted while cooing the reactants with water to about ambient temperature by a cooling apparatus.
- the starting materials used in the present invention i.e., the trialkylaluminum and the aluminum alkoxide, are commercially available.
- the dialkylaluminum alkoxide prepared in accordance with the present invention may be vaporized under ambient condition, and therefore, it is effectively used in practicing a thermal CVD process of an aluminum oxide film.
- the preferred dialkylaluminum alkoxide compound in practicing the CVD of an aluminum oxide film includes dimethylaluminum isopropoxide, diethylaluminum isopropoxide, dimethylaluminum t-butoxide and the like. Under ambient condition, dimethylaluminum isopropoxide is a liquid, whereas diethylaluminum isopropoxide and dimethylaluminum t- butoxide are soft colorless solids. Therefore, dimethylaluminum isopropoxide is most preferred for practicing the CVD process .
- the deposition may be conveniently conducted by contacting the vapor of a dialkylaluminum alkoxide with the surface of a substrate heated at a temperature above 250 °C, preferably at a temperature ranging from 300 to 600 °C to deposit an aluminum oxide film thereon.
- the vaporization of dialkylaluminum alkoxide may be carried out in a reactor which is preferably maintained at an internal pressure of 5 to 50 mbar.
- the substrate which may be used in practicing the CVD process is an inorganic solid which is stable under the CVD condition.
- the inventive process has an economic advantage in that the desired dialkylaluminum alkoxide can be obtained in an amount larger than that obtained in the prior art from the same amount of trialkylaluminum, which is more than ten times as expensive as an alcohol or a aluminum alkoxide. For example, about 1.3 mole of dialkylaluminum alkoxide is obtained from one mole of trialkylaluminum with a yield of 85 to 90 %, in the present invention. Whereas, according to the conventional process, no more than one mole of dialkylaluminum alkoxide can be obtained from the same amount of trialkylaluminum. Also the inventive process produces the intended product in the absence of any solvent, even at or near ambient temperature, without generating gaseous byproduct.
- Example 1 0.1 g of dimethylaluminum isopropoxide prepared in Example 1 was vaporized at room temperature and the vapor thereof was transported to a Si (100) substrate preheated to 350 °C to conduct the chemical vapor deposition for 5 hours.
- the X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
- Example 2 0.1 g of diethylaluminum isopropoxide prepared in Example 2 was vaporized at room temperature and the vapor thereof was brought into contact with a Si(100) substrate preheated to 350 °C to conduct the chemical vapor deposition for 2 hours.
- the X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
- Example 1 0.1 g of dimethylaluminum isopropoxide prepared in Example 1 was vaporized at room temperature and the vapor thereof was carried to a Si (100) substrate preheated to 600 °C to conduct the chemical vapor deposition for 5 hours.
- the X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
- Example 2 0.1 g of diethylaluminum isopropoxide prepared in Example 2 was vaporized at room temperature and the vapor thereof was transported to a Si (100) substrate preheated to 400 °C to conduct the chemical vapor deposition for 10 hours.
- the X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
- Example 3 0.05 g of dimethylaluminum t-butoxide prepared in Example 3 was vaporized at 0 °C and the vapor thereof was transported to a Si (100) substrate preheated to 400 °C to conduct the chemical vapor deposition for 3 hours.
- the X- ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
- dialkylaluminum alkoxides can be economically prepared at or near ambient temperature; and they can be effectively vaporized under ambient condition to be used in depositing an aluminum oxide film on a suitable substrate.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Dialkylaluminum alkoxide represented by R12AlOR2 wherein R?1 and R2¿ are each independently a C¿1-10? alkyl group, is economically prepared by reacting a trialkylaluminum with an aluminum alkoxide at or near ambient temperature.
Description
PROCESS FOR THE PREPARATION OF DIALKYLALUMINUM ALKOXIDE
Field of the Invention
The present invention relates to a novel process for preparing a dialkylaluminum alkoxide by reacting a trialkylaluminum with an aluminum alkoxide at or near ambient temperature.
Background of the Invention
A dialkylaluminum alkoxide, which may be represented by R^IOR2 wherein R and R2 are each independently a Cη_10 alkyl group was recently reported to be useful in preparing an aluminum oxide film by a thermal CVD (chemical vapor deposition) process because it has a sufficiently high vapor pressure at ambient temperature. For example, the vapor pressure of dimethylaluminum isopropoxide is 1.5 mHg at 38 °C. Also it is not spontaneously inflammable in air, differently from trialkylaluminum.
Dialkylaluminum alkoxideε have been conventionally prepared by reacting trialkylaluminu s with alcohols, as is described, e.g., by Paul S. Coan, et al . in Organometallics , 8., 2724 (1989). Dimethylaluminum isopropoxide, for example, is prepared by reacting trimethylaluminum with isopropyl alcohol as follows:
(CH3)3A1 + ^rOH > (CHjJjAlC^Pr + CH4
-78°C
However, the above method has the disadvantages that the reaction must be conducted at a very low temperature, e.g., about -78 °C, in the presence of an excess amount of rigorously dry solvent in order to control the large reaction heat released and that methane generated as a byproduct must be vented. Therefore, in a large-scale production of the dialkylaluminum alkoxide, the above
process necessarily requires equipments for cooling the reacting mixture and for removing methane produced.
Summary of the Invention
Accordingly, it is an object of the present invention to provide an efficient, economic process for the preparation of a dialkylaluminum alkoxide.
In accordance with an aspect of the present invention, there is provided a process for preparing a dialkylaluminum alkoxide represented by R1 2A10R2 wherein R1 and R2 are each independently a C1_10 alkyl group, which comprises reacting a trialkylaluminum with an aluminum alkoxide at or near ambient temperature .
Detailed Description of the Invention
In accordance with the present invention, the dialkylaluminum alkoxide compound is prepared by reacting a trialkylaluminum with an aluminum alkoxide. The above reaction may be shown as follows:
2 R1 3A1 + Al(OR2)3 > ■ 3 R1 2A10R2
At or near ambient temperature
wherein R1 and R2 are each independently a C,_10 alkyl group. In the above reaction, the trialkylaluminum is reacted with the aluminum alkoxide in a molar ratio of 2.2:1 to 1.8: 1, and the reaction is conducted at or near ambient temperature, suitably at a temperature ranging from 0 to 60 °C, preferably 0 to 25 °C. The above reaction may be preferably conducted while cooing the reactants with water to about ambient temperature by a cooling apparatus.
The starting materials used in the present invention, i.e., the trialkylaluminum and the aluminum alkoxide, are commercially available.
The dialkylaluminum alkoxide prepared in accordance
with the present invention may be vaporized under ambient condition, and therefore, it is effectively used in practicing a thermal CVD process of an aluminum oxide film. The preferred dialkylaluminum alkoxide compound in practicing the CVD of an aluminum oxide film includes dimethylaluminum isopropoxide, diethylaluminum isopropoxide, dimethylaluminum t-butoxide and the like. Under ambient condition, dimethylaluminum isopropoxide is a liquid, whereas diethylaluminum isopropoxide and dimethylaluminum t- butoxide are soft colorless solids. Therefore, dimethylaluminum isopropoxide is most preferred for practicing the CVD process .
The deposition may be conveniently conducted by contacting the vapor of a dialkylaluminum alkoxide with the surface of a substrate heated at a temperature above 250 °C, preferably at a temperature ranging from 300 to 600 °C to deposit an aluminum oxide film thereon. The vaporization of dialkylaluminum alkoxide may be carried out in a reactor which is preferably maintained at an internal pressure of 5 to 50 mbar. The substrate which may be used in practicing the CVD process is an inorganic solid which is stable under the CVD condition.
The inventive process has an economic advantage in that the desired dialkylaluminum alkoxide can be obtained in an amount larger than that obtained in the prior art from the same amount of trialkylaluminum, which is more than ten times as expensive as an alcohol or a aluminum alkoxide. For example, about 1.3 mole of dialkylaluminum alkoxide is obtained from one mole of trialkylaluminum with a yield of 85 to 90 %, in the present invention. Whereas, according to the conventional process, no more than one mole of dialkylaluminum alkoxide can be obtained from the same amount of trialkylaluminum. Also the inventive process produces the intended product in the absence of any solvent, even at or near ambient temperature, without generating gaseous byproduct.
The following Examples are provided for the purposes of
illustrating certain aspects of the present invention only; they are not to be construed as limiting the scope of the present invention in any way.
Example 1 : Synthesis of dimethylaluminum isopropoxide
To 5.99 g (83.1 mmol) of trimethylaluminum was slowly added 8.49 g (41.5 mmol) of aluminum isopropoxide which was previously purified by distillation under a reduced pressure. The resulting mixture was stirred for 8 hours and distilled at 10 m Hg to obtain 12.52 g (108 mmol, 87 % yield) of the title compound as a colorless liquid. The boiling point of the title compound, as calculated by the following equation, ranges from 38 to 64 °C: log (pressure (mmHg) ) = 2900( 200) / T(K) + 9.6(±0.6)
■"H NMR (benzene-d6, δ, pp ) -0.47(s, Al(CH3)2, 6H), 0.99(d, OCH(CH3)2, 6H), 3.84(heptet, OCH(CH3)2, IH).
Example 2 : Synthesis of diethylaluminum isopropoxide
To 4.99 g (43.7 mmol) of triethylaluminum was slowly added while stirring 4.69 g (22.9 mmol, 5 % excess) of aluminum isopropoxide which was previously purified by distillation under a reduced pressure. After 24 hours the resulting solid was sublimed under a reduced pressure to obtain 8.42 g (58.4 mmol, 89 % yield) of the title compound as a soft colorless solid.
1H NMR (benzene-d6, δ, ppm) 0.14 (quartet, Al(CH2CH3)2, 4H), 1.03 (doublet, OCH(CH3)2, 6H), 1.28 (triplet, Al(CH2CH3)2, 6H), 3.87(heptet, OCH(CH3)2, IH) .
Example 3: Synthesis of dimethylaluminum t-butoxide
To 2.26 g (31.4 mmol) of trimethylaluminum was slowly added while stirring 3.86 g (15.7 mmol) of aluminum t- butoxide . After 24 hours the resulting solid was sublimed under a reduced pressure to obtain 5.20 g (39.9 mmol, 85 %
yield) of the title compound as a soft colorless solid. 1H NMR (benzene-d6, δ, ppm) -0.39(s, Al(CH3)2, 6H), 1.15(s, OC(CH3)3, 9H).
Application Example 1: Deposition of aluminum oxide film
0.1 g of dimethylaluminum isopropoxide prepared in Example 1 was vaporized at room temperature and the vapor thereof was transported to a Si (100) substrate preheated to 350 °C to conduct the chemical vapor deposition for 5 hours. The X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
Application Example 2: Deposition of aluminum oxide film
0.1 g of diethylaluminum isopropoxide prepared in Example 2 was vaporized at room temperature and the vapor thereof was brought into contact with a Si(100) substrate preheated to 350 °C to conduct the chemical vapor deposition for 2 hours. The X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
Application Example 3: Deposition of aluminum oxide film
0.1 g of dimethylaluminum isopropoxide prepared in Example 1 was vaporized at room temperature and the vapor thereof was carried to a Si (100) substrate preheated to 600 °C to conduct the chemical vapor deposition for 5 hours. The X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
Application Example 4 : Deposition of aluminum oxide film
0.1 g of diethylaluminum isopropoxide prepared in
Example 2 was vaporized at room temperature and the vapor thereof was transported to a Si (100) substrate preheated to 400 °C to conduct the chemical vapor deposition for 10 hours. The X-ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
Application Example 5 : Deposition of aluminum oxide film
0.05 g of dimethylaluminum t-butoxide prepared in Example 3 was vaporized at 0 °C and the vapor thereof was transported to a Si (100) substrate preheated to 400 °C to conduct the chemical vapor deposition for 3 hours. The X- ray photoelectron spectrum of the deposited film showed peaks corresponding to oxygen and aluminum as well as carbon, but not the peaks for silicon.
As described above, in accordance with the present invention, dialkylaluminum alkoxides can be economically prepared at or near ambient temperature; and they can be effectively vaporized under ambient condition to be used in depositing an aluminum oxide film on a suitable substrate.
While the invention has been described with respect to the specific embodiments, it should be recognized that various modifications and changes may be made by those skilled in the art to the invention which also fall within the scope of the invention as defined by the appended claims .
Claims
1. A process for preparing a dialkylaluminum alkoxide represented by R1 2A10R2 wherein R1 and R2 are each independently a C,_10 alkyl group, which comprises reacting a trialkylaluminum with an aluminum alkoxide at a temperature ranging from 0 to 60 °C.
2. The process of claim 1 wherein the dialkylaluminum alkoxide is dimethylaluminum isopropoxide, diethylaluminum isopropoxide or dimethylaluminum t-butoxide.
3. The process of claim 1 wherein the reaction is conducted at a temperature ranging from 0 to 25 °C.
4. The process of claim 1 wherein the molar ratio of the trialkylaluminum to the aluminum alkoxide ranges from 2.2 to 1.8.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960028139A KR100186947B1 (en) | 1996-07-12 | 1996-07-12 | Process for the preparation of dimethylaluminium isopropoxide |
| KR1996/28139 | 1996-07-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998002444A1 true WO1998002444A1 (en) | 1998-01-22 |
Family
ID=19466124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR1997/000102 WO1998002444A1 (en) | 1996-07-12 | 1997-06-04 | Process for the preparation of dialkylaluminum alkoxide |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100186947B1 (en) |
| WO (1) | WO1998002444A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037003A (en) * | 1996-10-16 | 2000-03-14 | President And Fellows Of Harvard College | Chemical vapor deposition of aluminum oxide |
| CN104004007A (en) * | 2013-02-25 | 2014-08-27 | 三星电子株式会社 | Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same |
| WO2023177696A1 (en) * | 2022-03-16 | 2023-09-21 | Entegris, Inc. | Process for preparing dialkyl aluminum alkoxides |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0269002A2 (en) * | 1986-11-21 | 1988-06-01 | Texas Alkyls, Inc. | Fluoroalkoxyaluminium compounds and their use in polymerization processes |
-
1996
- 1996-07-12 KR KR1019960028139A patent/KR100186947B1/en not_active IP Right Cessation
-
1997
- 1997-06-04 WO PCT/KR1997/000102 patent/WO1998002444A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0269002A2 (en) * | 1986-11-21 | 1988-06-01 | Texas Alkyls, Inc. | Fluoroalkoxyaluminium compounds and their use in polymerization processes |
Non-Patent Citations (1)
| Title |
|---|
| METHODEN DER ORGANISCHEN CHEMIE, HOUBEN-WEYL, 4th Edition, Vol. XIII/4, GEORG THIEME VERLAG, STUTTGART, 1970, "III. Alkyl-Aluminium-Sauerstoff-bzw. -Schwefel-Verbindungen", pages 76-83. * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6037003A (en) * | 1996-10-16 | 2000-03-14 | President And Fellows Of Harvard College | Chemical vapor deposition of aluminum oxide |
| CN104004007A (en) * | 2013-02-25 | 2014-08-27 | 三星电子株式会社 | Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same |
| WO2023177696A1 (en) * | 2022-03-16 | 2023-09-21 | Entegris, Inc. | Process for preparing dialkyl aluminum alkoxides |
Also Published As
| Publication number | Publication date |
|---|---|
| KR980009269A (en) | 1998-04-30 |
| KR100186947B1 (en) | 1999-05-15 |
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