WO1996032201A1 - Structures having enhanced biaxial texture and method of fabricating same - Google Patents

Structures having enhanced biaxial texture and method of fabricating same Download PDF

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Publication number
WO1996032201A1
WO1996032201A1 PCT/US1996/004934 US9604934W WO9632201A1 WO 1996032201 A1 WO1996032201 A1 WO 1996032201A1 US 9604934 W US9604934 W US 9604934W WO 9632201 A1 WO9632201 A1 WO 9632201A1
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WIPO (PCT)
Prior art keywords
article
biaxially textured
accordance
substrate
layer
Prior art date
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PCT/US1996/004934
Other languages
French (fr)
Inventor
Amit Goyal
John D. Budai
Donald M. Kroeger
David P. Norton
Eliot D. Specht
David K. Christen
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Lockheed Martin Energy Systems, Inc.
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Application filed by Lockheed Martin Energy Systems, Inc. filed Critical Lockheed Martin Energy Systems, Inc.
Priority to DE69636162T priority Critical patent/DE69636162T2/en
Priority to JP53114096A priority patent/JP3601830B2/en
Priority to CA002217822A priority patent/CA2217822C/en
Priority to AU55398/96A priority patent/AU713892B2/en
Priority to EP96912663A priority patent/EP0830218B1/en
Publication of WO1996032201A1 publication Critical patent/WO1996032201A1/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0801Manufacture or treatment of filaments or composite wires
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/74Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/12Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/028Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/225Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D2201/00Treatment for obtaining particular effects
    • C21D2201/04Single or very large crystals
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D2201/00Treatment for obtaining particular effects
    • C21D2201/05Grain orientation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/9265Special properties
    • Y10S428/93Electric superconducting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49014Superconductor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611Oxide-containing component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611Oxide-containing component
    • Y10T428/12618Plural oxides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31678Of metal

Definitions

  • the present invention relates to biaxially textured metallic substrates and articles made therefrom, and more particularly to such substrates and articles made by rolling a metallic substrate to obtain a biaxial texture, followed by deposition of epitaxial materials thereon, with an emphasis on superconductors.
  • Re-Ba-Cu-O ReBCO, Re denotes a rare earth element
  • Tl-(Pb,Bi)-Sr-(Ba)-Ca-Cu-O and Hg-(Pb)-Sr-(Ba)-Ca-Cu-O families of superconductors some of the compounds have much higher intrinsic limits and can be used at higher temperatures.
  • Fig. 1 shows a comparison of optimized properties of various superconductors. It has been demonstrated that these superconductors possess high critical current densities (Jc) at high temperatures when fabricated as single crystals or in essentially single-crystal form as epitaxial films on single crystal substrates such as SrTi0 3 and LaAIO,.
  • Jc critical current densities
  • Y-Ba 2 -Cu 3 -O l( (YBCO) is an important superconducting material for the development of superconducting current leads, transmission lines, motor and magnetic windings, and other electrical conductor applications. When cooled below their transition temperature, superconducting materials have no electrical resistance and carry electrical current without heating up.
  • One technique for fabricating a superconducting wire or tape is to deposit a YBCO film on a metallic substrate.
  • Superconducting YBCO has been deposited on polycrystalline metals in which the YBCO is c-axis oriented, but not aligned in-plane.
  • the YBCO films must be biaxially textured, preferably c-axis oriented, with effectively no large-angle grain boundaries, since such grain boundaries are detrimental to the current-carrying capability of the material.
  • YBCO films deposited on polycrystalline metal substrates do not generally meet this criterion.
  • a method of preparing a biaxially textured alloy article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate an alloying agent to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to cause interdiffusion of the metal and the alloying agent, while preventing homogeneous melting, to form a biaxially textured alloy article.
  • a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and, b. depositing onto the surface of the biaxially textured substrate an epitaxial layer of material to form a biaxially textured laminate.
  • a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate a layer of material to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to induce epitaxy in the material to form a biaxially textured laminate.
  • a method of preparing a biaxially textured laminate article including the steps of: a.
  • a substrate having a biaxially textured Ag surface b. depositing onto the surface of the substrate an epitaxial buffer template layer of ReBCO using a pulsed laser deposition technique at a temperature in the range of about 600°C to about 700°C, and at an oxygen pressure in the range of about 50 mTorr to about 300 mTorr; and, c. depositing onto the buffer template layer another epitaxial layer of perovskite-like material using a pulsed laser deposition technique.
  • a biaxially textured alloy article including a rolled and annealed biaxially textured metal substrate having a surface, the metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial layer of an alloying agent on a surface thereof, the epitaxial layer being bonded to the substrate by alloying.
  • a biaxially textured laminate article including a rolled and annealed biaxially textured base metal substrate, the base metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure, having an epitaxial layer of another material on a surface thereof.
  • a superconductor article including a rolled and annealed, biaxially textured metal substrate, having an epitaxial barrier layer thereon, and an epitaxial superconductor layer on the barrier layer.
  • a superconductor article including a rolled and annealed biaxially textured Ag substrate having an epitaxial superconductor layer thereon.
  • Fig. 1 is a graph showing optimized magnetic irreversibility lines of various high temperature superconductors.
  • Fig. 2 is an oblique schematic view of a biaxially textured substrate having various epitaxial layers deposited thereon.
  • Fig. 3 is a Ag (111) X-ray pole figure of a rolled and annealed tape.
  • Fig. 4 shows expected intensities for a (412) ⁇ 548 > texture on a Ag (111) pole figure.
  • Fig. 5 is a Cu(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet.
  • Fig. 6 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with an as-deposited layer of Ag.
  • Fig. 7 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with a layer of Ag after annealing.
  • Fig. 8 is a graph showing an X-ray ⁇ scan through Ni(202) indicating in-plane alignment of the Ni substrate in a sample of Ag/Pd/Rolled Ni.
  • Fig. 9 is a graph showing an X-ray ⁇ scan through Pd(202) indicating in-plane alignment of the Pd layer in a sample of Ag/Pd/Rolled Ni.
  • Fig. 10 is a graph showing an X-ray ⁇ scan through Ag(202) indicating in-plane alignment of the Ag layer in a sample of Ag/Pd/Rolled Ni.
  • Fig. 11 is a graph showing an X-ray ⁇ scan through YBCO(226) reflection indicating in-plane alignment of the YBCO superconductor in a sample of YBCO/CeO 2 /Ag/Pd/Ni.
  • a biaxially textured substrate or sheath material is fabricated by industrially scalable rolling techniques.
  • the substrate can then be coated/reacted by a variety of techniques to produce chemically compatible, textured barrier layers and/or alloys.
  • An epitaxial layer of another material is then grown on the textured substrate (or on a barrier layer as the case may be) using any of a variety of techniques.
  • the texture from the substrate (or the barrier layer) is then induced in the epitaxial layer. It is thereby possible to deposit a biaxially aligned superconductor with high critical current density.
  • Such articles are also important from the perspective of other physical properties, e.g., mechanical properties. These articles and methods are contemplated to have applications far beyond superconductivity; for example, they can be used in the fabrication of strong, tough materials for
  • SUBSTITUTE SHEET (RULE 26 mechanical, magnetic, and ferroelectric applications. It is well established that low energy boundaries — low angle and low-sigma coincident site lattice (CSL) — have superior physical properties, including enhanced mechanical toughness. Hence, a strengthened substrate is described herein, since in these biaxially textured substrates, a high proportion of grain boundaries have small misonentation angles. (The expected grain boundary misonentation distribution can be estimated based on the macroscopic texture determination.) Similar advantages are expected for other physical properties, e.g., magnetic, ferroelectric properties.
  • a biaxially textured substrate 1 has an epitaxial buffer layer 2 deposited thereon, upon which is deposited a second epitaxial layer 3 which is a superconductor, ferroelectric device, or other electromagnetic or electro-optical device.
  • the buffer layer 2 is not necessary, and in other cases, multiple buffer layers are preferred or necessary.
  • plastic flow causes reorientation of the lattice of individual grains of a polycrystalline material and tends to develop a texture or preferred orientation of the lattice in the grains.
  • the progress of reorientation is gradual; the orientation change proceeds as plastic flow continues, until a texture is reached that is stable against indefinite continued flow of a given type.
  • the nature of the stable deformation texture and the manner in which it is approached is characteristic of the material and of the nature of the flow throughout the deformation process (i.e., the magnitude of the three principal strains at all points within the specimen and at successive times during the process).
  • the texture development is strongly influenced by temperature, particularly if the temperature of deformation is high enough for recrystallization to take place.
  • Annealing Processes The development of an annealing texture involves several fundamental mechanisms.
  • An annealing texture may develop from recovery without recrystallization (in which case it would be expected to duplicate the texture present before annealing), from primary recrystallization, or from grain growth subsequent to recrystallization. Grain size distribution can remain normal throughout the process, or a few grains may grow very large while the rest remain approximately unchanged until devoured by the large ones. The latter type of grain growth, referred to as "secondary recrystallization" or “discontinuous”, is generally considered to be abnormal.
  • cube texture In a cube texture, the cube plane lies parallel to the plane of the sheet and a cube edge is parallel to the rolling direction, i.e. , (100)[001j. This texture resembles a single crystal with subgrains, but may contain a minor amount of material in twin relation to the principal orientation.
  • a fully developed cube texture, as described herein, has been developed with biaxial alignment with x-ray diffraction peak width of 2° full width at half maximum.
  • Brass texture is (110) ⁇ 112 > . It does not appear that brass texture is obtainable as sha ⁇ as the cube texture.
  • the stacking fault energy is very important. It is well known that the stacking fault energy increases with increase in temperature. One can show that at temperatures above 150°C, the stacking fault energy of Ag is almost same as that of Cu at room temperature. Hence, when rolling Ag at temperatures 150 - 500°C the development of cube texture is generally expected. Above 300°C, it is highly likely that only the cube component remains.
  • Rolling temperature 50°C - 500°C, preferably 100°C - 400°C, more preferably 180°C -
  • Annealing temperature 100°C - 960°C, preferably 100°C - 600°C, more preferably
  • Preferable purity of Ag is at least 99.99%. As Ag purity decreases, the temperature of deformation increases. If Ag is 99.0% pure, the required deformation temperature may be over 200°C.
  • a substrate of Ag is rolled under the following conditions to form a sha ⁇ cube texture thereon:
  • Decreasing temperatures results in decrease in the stacking fault energy. This favors the brass component of the texture. In order to obtain a sha ⁇ texture one needs to isolate a single texture component. Decreasing the temperature of deformation increases the amount of brass component fraction. Rolling temperature should be no more than 20°C, and annealing temperature should be at least 100°C.
  • a strip of Ag was rolled under the following conditions to form a sha ⁇ brass texture thereon: Rolling temperature: 160°C
  • Annealing temperature should be 100°C - 900°C; preferably 100°C - 400°C; more preferably 200°C - 300°C.
  • EXAMPLE III A strip of Ag was rolled under the following conditions to form a (412) ⁇ 548 > texture thereon: Rolling temperature: room temperature Rolling speed: 15 ft./min.
  • Fig. 3 shows Ag (111) X-ray pole figure of a rolled and annealed tape.
  • Fig. 4 shows expected intensities for a (412) ⁇ 548 > texture on a Ag (111) pole figure.
  • a well developed cube texture in metals such as Cu, Ni and Fe can be achieved by heavy rolling process reductions (at least 80%) prior to final annealing.
  • Al small reductions prior to final annealing are required to produce the cube texture.
  • Ag and in Ag-, Cu-, Ni-, Al- and Fe-based alloys, components of cube texture can be achieved by rolling at higher temperatures (in excess of 100°C). General conditions for this process are dependent upon the stack fault energy of the metal. The higher the purity of the metal, the lower the required temperature of deformation.
  • Total deformation prior to annealing should be at least 70%, preferably at least 80%. Annealing temperature should be at least
  • Rolling speed 15 ft./min.
  • Reduction Per Pass 10%
  • Rolling direction Reverse rolling Lubrication: light mineral oil Annealing temperature 300° C Purity of Ag - at least 99.99%
  • Fig. 5 shows a pole figure depicting the strong in-plane as well as out-of-plane texture in the rolled and annealed Cu sheet.
  • Ag can be coated on the textured Cu sheet followed by heat treatment at high temperatures, thereby diffusing Ag into the Cu. The process can be continued until one is left with, in effect, a Ag-rich substrate with some Cu in it. Diffusion of Ag into Cu does not change the bulk cube texture of the sheet. Varying amounts of Ag can be diffused into the Cu. Alternatively one can saturate the Cu with Ag. Subsequent deposition of Ag will now result in a top layer which is primarily Ag. In this way cube- textured Ag can be formed.
  • a thick layer Ag( lOO ⁇ m) was electroplated using a standard electroplating technique on to a cube textured Cu substrate made according to the method described herein.
  • the composite structure was then annealed at 800 °C in vacuum.
  • the resulting material was a Ag-Cu alloy with all the electroplated Ag having diffused into the Cu. Both the lattice parameter as well the color of the copper strip was changed on annealing.
  • the instant method can be extended to many alloys, for example, alloys commonly known as nichrome (a Ni-Cr alloy), and inconel (a Cu-Ni alloy).
  • nichrome a Ni-Cr alloy
  • inconel a Cu-Ni alloy.
  • Oxidation resistant layers on the surface of the biaxially textured Ni are formed by diffusing appropriate amounts of Cr, Mo, Al and Fe.
  • a layer of Cr was electroplated on a cube textured Ni substrate made according to the method described herein by a standard commercial electroplating technique.
  • Tuning of the lattice parameters of oriented substrates produced by rolling can also be done. For example, depositing a thin layer of Pd or Pt, etc., and subsequent diffusion of this layer into the textured
  • Ni will result in the local alteration of the lattice parameter, which may be important for achieving better epitaxy of the barrier layer or the device layer.
  • T e instant method can be extended to Al- and Fe-based alloys to obtain chemically compatible, cube textured substrates.
  • Ni-Al alloy is rolled according to the method described herein, using small final reductions prior to annealing to obtain a sha ⁇ cube texture.
  • Ni is deposited on the surface by a conventional electroplating method.
  • the composite structure is then heated at temperatures greater than 100°C in vacuum.
  • the resulting structure is a textured Ni-Al alloy.
  • Formation of brass texture in the substrate in Cu-, Ni-, Fe-, Al- and Ag- based alloys can be achieved by cold rolling by heavy reductions (at least 70%, preferably at least 80%) at room temperature followed by recrystallization annealing. In some cases, deformation temperatures as low as -230°C may be required to produce a sharp texture. Annealing temperature should generally be at least 100°C.
  • the alloys have excellent oxidation resistance, and if this is the case, highly textured substrates can be directly used as templates for a superconductor phase.
  • a chemically and structurally compatible barrier layer which can be grown epitaxially on the textured substrate (for example, a native oxide) can be used.
  • Brass texture in 70% Cu - 30% Zn is attained by rolling at room temperature using the following conditions:
  • a desirable primary recrystallization texture is that consisting of small grains. This is obtained by having a suitable distribution of second phase materials such as manganese, sulfur, silica or vanadium nitride as grain growth inhibitors.
  • the desired texture in this case is produced by secondary recrystallization, with the (110)[001] grains growing to a size 10 to 100 times the sheet thickness during annealing in suitable atmospheres and temperatures.
  • a Biaxially Textured Layer Various layers comprised of different metals such as Cu, Ni, Al, Fe, etc., and ceramics can be deposited on the textured metal substrate.
  • the texture of the substrate can be induced into the layer during deposition or during subsequent annealing.
  • a fully cube textured Cu sample was made according to the method described above.
  • the sample was placed in a laboratory-scale evaporator in a vacuum of about 10 " * torr. Ag was deposited on the sample at room temperature by evaporation, followed by annealing at 200° C in vacuum to produce a cube textured Ag layer. Results are shown in Figs. 6 and 7.
  • SUBSTITUTE SHEET (RULE 261 Fig. 6 shows a pole figure of an as-deposited Ag layer on the Cu sheet. It is found to have a very sha ⁇ (111) texture. Fig. 7 shows the pole figure of the same sheet after annealing. It is found that the strong cube texture in the Cu is imparted on the Ag layer. This textured Ag can be used as a barrier layer, and a superconductor phase or other device layer can be grown on it. If the oxide layer on the Cu is removed prior to deposition of Ag, as-deposited Ag is cube textured.
  • a thin layer of another face-centered cubic material such as Pd, Pt, Cr, and/or Cu may be necessary before Ag is deposited.
  • a biaxial textured laminate article was formed according to the invention by deposition of a Pd layer upon a textured Ni substrate, followed by deposition of an Ag layer upon the Pd layer.
  • the deposition process used dual-source dc magnetron sputtering, and the deposition conditions were as follows:
  • Substrate temperatures 500°C for Pd deposition, 300°C for Ag deposition
  • Layer thicknesses 200 nm for Pd, 35 ⁇ m for Ag.
  • Figs. 8 - 10 show (202) phi scans of a rolled, cube-textured Ni strip, with a thin layer of Pd, and then a layer of Ag on the Pd.
  • the texture of the substrate can clearly be seen to be imparted on the layer.
  • a biaxially-textured alloy coating can also be formed by depositing at least two films of dissimilar metals on the surface of the biaxially-textured substrate, and subsequently annealing the coated substrate to a temperature sufficiently high to allow interdiffusion of the layers. If the layers are not epitaxial as- deposited, then epitaxial growth will occur during the annealing process.
  • a layer of 300 nm thick Pd was sputter-deposited at 500°C.
  • a layer of 1000 nm thick Ag is then sputter-deposited at 300°C.
  • This Ag/Pd/Ni epitaxial laminate structure was then annealed at 700°C in vacuum.
  • the resulting article consisted of a biaxially-textured Ag-Pd alloy coating on the biaxially- textured Ni.
  • a laminate article with a biaxially-textured ceramic layer is formed according to the invention by growing an epitaxial layer, such as yttria-stabilized zirconia (YSZ), MgO, TiN, ZrO 2 , CeO 2 , SrTiO 3 , or
  • Epitaxial ceramic layers can be grown using one of a variety of techniques including pulsed-laser deposition, sputtering, vapor deposition, chemical vapor deposition, sol-gel, spray pyrolysis, spin coating, and electrodeposition.
  • a ferroelectric, electro-optic, superconducting, or other electromagnetic layer can then be epitaxially grown onto this biaxially-textured ceramic layer using one of the film growth techniques listed above.
  • the final laminate article consists of a biaxially-textured ferroelectric, electro-optic, or superconducting film on a ceramic layer on a metal substrate.
  • the rolling processes for fabricating the textured metal substrate described earlier enables the fabrication of long-length ferroelectric, electro-optic, superconducting, or other electromagnetic biaxially-textured laminate articles.
  • the final deposited layer is a superconductor
  • the resulting article is a superconducting tape with few or no weak-link high-angle grain boundaries.
  • the ability to fabricate this article is a significant step in the development of superconducting high-current conductors for use at temperatures greater than 77 K in high magnetic fields.
  • a biaxially textured laminate made according to Example X was introduced into a pulsed-laser deposition chamber. After sputter cleaning the Ag surface with an Ar ion gun, the laminate article was heated to 750°C. A 500 nm thick CeO 2 layer was then deposited by pulsed-laser deposition with an oxygen background pressure of 4x10"* Torr. A 1000 nm thick YBCO film was then deposited at 750°C in 200 mTorr oxygen. The resulting laminate, biaxially-textured YBCO/CeO 2 /Ag/Pd/Ni multilayer structure, was cooled in 1 atm oxygen. Results are shown in Fig. 11.
  • Figure 11 shows the x-ray phi scan of the 226 reflection of the YBCO layer, indicating that the YBCO was c-axis oriented, biaxially-textured. Formation of C-Axis Oriented. Biaxinllv-Textiired Pernvskite-Like Films on Biaxia lv-Textured Ag
  • a two-step film growth process involving a non-superconducting ReBCO buffer template layer has been developed which enables the growth of c-axis oriented, biaxially-textured perovskite-like films on single crystal or biaxially-textured Ag.
  • the substrate surface should be (110) or (100) biaxially-textured Ag.
  • the substrate is heated to 600°C - 700°C, preferably 625°C - 675°C.
  • Pulsed-laser deposition is then utilized to grow a ReBCO layer in an oxygen pressure of 50-300 mTorr, preferably 150-250 mTorr, onto the Ag surface.
  • This film does not have good superconducting properties, it is continuous with the c-axis perpendicular to the substrate surface, and aligned in-plane with respect to the crystal axes of the Ag.
  • This ReBCO layer serves as a template for the growth of subsequent epitaxial perovskite-like layers. Note that the function of this ReBCO buffer template is to induce crystallographic alignment in subsequent layers rather than act as a superconductor. C-axis oriented, biaxially-textured films of selected perovskite-like materials, such as YBCO or SrTiO 3 , can then be grown on this buffer template layer at a growth temperature which optimizes the desired properties of the perovskite-like film.
  • ReBCO films which are c-axis oriented, biaxially-textured, and superconducting with a superconducting transition temperature of 80K - 90K (-193°C to -183°C) are obtained on Ag using the above procedure by growing an additional ReBCO layer on the nonsuperconducting ReBCO template buffer layer at 730°C - 800°C in 50-300 mTorr oxygen using pulsed-laser deposition.
  • growth of ReBCO directly on Ag at 730 °C - 800 °C results in a film with a superconducting transition temperature less than 80K.
  • the growth temperature necessary for obtaining the c-axis oriented ReBCO buffer template layer on Ag is not obvious as similar growth conditions produce a-axis oriented ReBCO on SrTiO 3 and similar substrates.
  • the use of the nonsuperconducting ReBCO template buffer layer to achieve subsequent c-axis oriented, biaxially-textured perovskite-like layers on a Ag surface is a key element of this embodiment of the invention.
  • ReBCO buffer template enables the growth of c-axis oriented, biaxially textured (epitaxial) SrTi0 3 films on biaxially-textured Ag or other metals with a biaxially-textured Ag film.
  • Direct growth of SrTiO, on Ag without the use of the buffer template results in (110) and (111) oriented films.
  • SrTi0 3 is an excellent buffer layer for high-temperature superconducting materials.
  • the ReBCO buffer template layer provides a means to form c-axis oriented, biaxially-textured metal/perovskite-like heterostructures on biaxially-textured Ag.
  • the perovskite-like film is grown on the ReBCO template using one of several film growth techniques such as sputtering, evaporation, spray pyrolysis, spin-coating, or chemical vapor deposition.
  • film growth techniques such as sputtering, evaporation, spray pyrolysis, spin-coating, or chemical vapor deposition.
  • Other possible uses of this invention include the growth of single crystal, biaxially textured (epitaxial) perovskite-like electro-optic or ferroelectric materials on biaxially-textured Ag important in the development of epitaxial metal/perovskite-like/metal multilayer devices.
  • a single crystal (100) oriented Ag foil produced by depositing Ag on (100) NaCl and dissolving the NaCl in water, was heated to 650°C in a vacuum chamber.
  • a 300 nm thick, c-axis oriented, biaxially-textured YBCO template layer was then deposited at 650°C in 200 mTorr oxygen.
  • the substrate was then heated to 780°C.
  • a second 1000 nm thick YBCO layer was then deposited onto the YBCO template buffer layer at 780°C in 200 mTorr.
  • the laminate article was then cooled in 1 at oxygen.
  • the resulting YBCO film was predominantly c-axis oriented, biaxially-textured with a superconducting transition temperature of approximately 85K (-188°C).
  • barrier layers of ceramics such as YSZ, MgO, TIN, Zr0 2 , CeO 2 , and SrT10 3 , are deposited by techniques such as vapor deposition, sol-gel, electrodeposition, etc., followed by annealing to form epitaxial, biaxially textured layers on the textured substrate (metal/alloy). The superconductor is then deposited on the textured template.
  • the superconductor may be deposited by a variety of techniques (vapor deposition, laser ablation, sputtering, sol-gel, dip coating, electrodeposition, electrophoretic deposition, spray pyrolysis, doctor blade techniques, etc.).
  • the as-deposited superconductor layer may be textured, but in other cases an additional oxygen anneal at appropriate oxygen partial pressures will be required to induce the texture from the substrate into the superconductor.
  • the method also applies to precursor deposits to which one or more cations must be added from the vapor during reaction to form the superconducting phase.
  • Figure 11 shows phi scans of the 226 reflection of YBCO on Ce0 2 on Ag on Pd on Ni.

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Abstract

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

Description

Structures Having Enhanced Biaxial Texture and Method of Fabricating Same
The United States Government has rights in this invention pursuant to contract no. DE-AC05- 84OR21400 between the United States Department of Energy (DOE) and Martin Marietta Energy Systems, Inc. The invention was funded by the Superconductivity Program for Electric Power Systems, DOE Office of Energy Efficiency and Renewable Energy, and the DOE Division of Materials Science.
FIELD OF THE INVENTION
The present invention relates to biaxially textured metallic substrates and articles made therefrom, and more particularly to such substrates and articles made by rolling a metallic substrate to obtain a biaxial texture, followed by deposition of epitaxial materials thereon, with an emphasis on superconductors.
BACKGROUND OF THE INVENTION
Current materials research aimed at fabricating high-temperature superconducting ceramics in conductor configurations for bulk, practical applications, is largely focused on powder-in-tubβ methods. Such methods have proved quite successful for the Bi-(Pb)-Sr-Ca-Cu-O (BSCCO) family of superconductors due to their unique mica-like mechanical deformation characteristics. In high magnetic fields, this family of superconductors is generally limited to applications below 30K. In the Re-Ba-Cu-O (ReBCO, Re denotes a rare earth element), Tl-(Pb,Bi)-Sr-(Ba)-Ca-Cu-O and Hg-(Pb)-Sr-(Ba)-Ca-Cu-O families of superconductors, some of the compounds have much higher intrinsic limits and can be used at higher temperatures. Fig. 1 shows a comparison of optimized properties of various superconductors. It has been demonstrated that these superconductors possess high critical current densities (Jc) at high temperatures when fabricated as single crystals or in essentially single-crystal form as epitaxial films on single crystal substrates such as SrTi03 and LaAIO,. These superconductors have so far proven intractable to conventional ceramics and materials processing techniques to form long lengths of conductor with Jc comparable to epitaxial films. This is primarily because of the "weak-link" effect. It has been demonstrated that in ReBCO, biaxial texture is necessary to obtain high transport critical current densities. High Jc's have been reported in polycrystalline ReBCO in thin films deposited on special substrates on which a biaxially textured non-superconducting oxide buffer layer is first deposited using ion- beam assisted deposition (IBAD) techniques. IBAD is a slow, expensive process, and difficult to scale up for production of lengths adequate for many applications.
High Je's have also been reported in polycrystalline ReBCO melt-processed bulk material which contains primarily small angle grain boundaries. Melt processing is also considered too slow for production of practical lengths. Thin-film materials having perovskite-Uke structures are important in superconductivity, ferroelectrics, and electro-optics. Many applications using these materials require, or would be significantly improved by, single crystal, c-axis oriented perovskite-Uke films grown on single-crystal or highly aligned metal or metal-coated substrates.
For instance, Y-Ba2-Cu3-Ol( (YBCO) is an important superconducting material for the development of superconducting current leads, transmission lines, motor and magnetic windings, and other electrical conductor applications. When cooled below their transition temperature, superconducting materials have no electrical resistance and carry electrical current without heating up. One technique for fabricating a superconducting wire or tape is to deposit a YBCO film on a metallic substrate. Superconducting YBCO has been deposited on polycrystalline metals in which the YBCO is c-axis oriented, but not aligned in-plane. To carry high electrical currents and remain superconducting, however, the YBCO films must be biaxially textured, preferably c-axis oriented, with effectively no large-angle grain boundaries, since such grain boundaries are detrimental to the current-carrying capability of the material. YBCO films deposited on polycrystalline metal substrates do not generally meet this criterion.
The terms "process", "method", and "technique" are used interchangeably herein. For further information, refer to the following publications:
1. K. Sato, et al., "High-Je Silver-Sheathed Bi-Based Superconducting Wires", IEEE Transactions on Magnetics, 27 (1991) 1231.
2. K. Heine, et al., "High-Field Critical Current Densities in
Figure imgf000004_0001
Wires", Applied Physics Letters, 55 (1991) 2441. 3. R. Flukiger, et al., "High Critical Current Densities in Bi(2223)/Ag tapes", Superconductor
Science & Technology 5. (1992) S61.
4. D. Dimos et al., "Orientation Dependence of Grain-Boundary Critical Currents in Y,Ba2Cu3θ7j Bicrystals", Physical Review Letters, 61 (1988) 219.
5. D. Dimos et al., "Superconducting Transport Properties of Grain Boundaries in Y,Ba2Cu,O7 Bicrystals", Physical Review B. 41 (1990) 4038.
6. Y. Iijima, et al., "Structural and Transport Properties of Biaxially Aligned YBa2Cu3O7.- Films on Polycrystalline Ni-Based Alloy with Ion-Beam Modified Buffer Layers", Journal of Applied Physics, 74 (1993) 1905.
7. R. P. Reade, et al. "Laser Deposition of biaxially textured Yttria-Stabilized Zirconia Buffer Layers on Polycrystalline Metallic Alloys for High Critical Current Y-Ba-Cu-O Thin Films" , Applied Physics letters. 61 (1992) 2231. 8. D. Dijkkamp et al. , "Preparation of Y-Ba-Cu Oxide Superconducting Thin Films Using Pulsed
Laser Evaporation from High Tc Bulk Material," Applied Physics Letters, 51, 619 (1987).
9. S. Mahajan et al., "Effects of Target and Template Layer on the Properties of Highly Crystalline Superconducting a-Axis Films of YBa2CujO7.x by DC-Sputtering," Physica C. 213, 445 (1993).
10. A. Inam et al., "A-axis Oriented Epitaxial YBa2CujO7.x-PrBa2Cu3O7.x Heterostructures," Applied Physics Letters. 57, 2484 (1990).
11. R. E. Russo et al. , "Metal Buffer Layers and Y-Ba-Cu-O Thin Films on Pt and Stainless Steel Using Pulsed Laser Deposition," Journal of Applied Physics, 68, 1354 (1990).
12. E. Narumi et al., "Superconducting YBa2Cu306, Films on Metallic Substrates Using In Situ Laser Deposition," A lied Physics 1 <»Herg 56, 2684 (1990). 13. R. P. Reade et al., "Laser Deposition of Biaxially Textured Yttria-Stabilized Zirconia Buffer
Layers on Polycrystalline Metallic Alloys for High Critical Current Y-Ba-Cu-O Thin Films," Applied
Physics letters. 61, 2231 (1992).
14. J. D. Budai et al. , "In-Plane Epitaxial Alignment of YBa2Cu3O7-, Films Grown on Silver
Crystals and Buffer Layers," Applied Physics Letters, 62, 1836 (1993). 15. T. J. Doi et al., "A New Type of Superconducting Wire; Biaxially Oriented
Tl1(Ba0.gSr0.2)2Ca2Cu:A on { 100} < 100> Textured Silver Tape," Proceedings of 7th International
Symposium on Superconductivity, Fukuoka, Japan, November 8-11, 1994.
16. D. Forbes, Executive Editor, "Hitachi Reports 1-meter Tl-1223 Tape Made by Spray
Pyrolysis", Superconductor Week, Vol. 9, No. 8, March 6, 1995. 17. Recrystallization, Grain Growth and Textures, Papers presented at a Seminar of the American
Society for Metals, October 16 and 17, 1965, American Society for Metals, Metals Park, Ohio.
OBJECTS OF THE INVENTION
Accordingly, it is an object of the present invention to provide a new and improved method for fabricating alloy and laminated structures having biaxial texture. It is another object of the present invention to provide a method to produce epitaxial superconductors on alloy and laminated structures having biaxial texture by practically scalable processes. It is a further object of the present invention to provide c-axis oriented, biaxially textured, superconducting YBCO films, or other perovskite-like materials, such as SrTi03, reproducibly obtainable on single-crystal Ag, biaxially textured Ag, or other metals on which an epitaxial Ag buffer layer can be formed. It is a further object of the present invention to provide c-axis oriented, biaxially textured perovskite-like ferroelectric films on Ag for metal/ferroelectric/metal multilayer devices.
Further and other objects of the present invention will become apparent from the description contained herein.
SUMMARY OF THE INVENTION In accordance with one aspect of the present invention, the foregoing and other objects are achieved by a method of preparing a biaxially textured alloy article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate an alloying agent to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to cause interdiffusion of the metal and the alloying agent, while preventing homogeneous melting, to form a biaxially textured alloy article. In accordance with another aspect of the present invention, a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and, b. depositing onto the surface of the biaxially textured substrate an epitaxial layer of material to form a biaxially textured laminate.
In accordance with a further aspect of the present invention a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate a layer of material to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to induce epitaxy in the material to form a biaxially textured laminate. In accordance with another aspect of the present invention, a method of preparing a biaxially textured laminate article including the steps of: a. providing a substrate having a biaxially textured Ag surface; b. depositing onto the surface of the substrate an epitaxial buffer template layer of ReBCO using a pulsed laser deposition technique at a temperature in the range of about 600°C to about 700°C, and at an oxygen pressure in the range of about 50 mTorr to about 300 mTorr; and, c. depositing onto the buffer template layer another epitaxial layer of perovskite-like material using a pulsed laser deposition technique.
In accordance with yet another aspect of the present invention, a biaxially textured alloy article including a rolled and annealed biaxially textured metal substrate having a surface, the metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial layer of an alloying agent on a surface thereof, the epitaxial layer being bonded to the substrate by alloying. In accordance with a still further aspect of the present invention, a biaxially textured laminate article including a rolled and annealed biaxially textured base metal substrate, the base metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure, having an epitaxial layer of another material on a surface thereof.
In accordance with yet a further aspect of the present invention, a superconductor article including a rolled and annealed, biaxially textured metal substrate, having an epitaxial barrier layer thereon, and an epitaxial superconductor layer on the barrier layer.
In accordance with a further aspect of the present invention, a superconductor article including a rolled and annealed biaxially textured Ag substrate having an epitaxial superconductor layer thereon.
BRIEF DESCRIPTION OF THE DRAWING
In the drawing:
Fig. 1 is a graph showing optimized magnetic irreversibility lines of various high temperature superconductors. Fig. 2 is an oblique schematic view of a biaxially textured substrate having various epitaxial layers deposited thereon. Fig. 3 is a Ag (111) X-ray pole figure of a rolled and annealed tape.
Fig. 4 shows expected intensities for a (412) < 548 > texture on a Ag (111) pole figure.
Fig. 5 is a Cu(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet.
Fig. 6 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with an as-deposited layer of Ag.
Fig. 7 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with a layer of Ag after annealing.
Fig. 8 is a graph showing an X-ray Φ scan through Ni(202) indicating in-plane alignment of the Ni substrate in a sample of Ag/Pd/Rolled Ni. Fig. 9 is a graph showing an X-ray Φ scan through Pd(202) indicating in-plane alignment of the Pd layer in a sample of Ag/Pd/Rolled Ni.
Fig. 10 is a graph showing an X-ray Φ scan through Ag(202) indicating in-plane alignment of the Ag layer in a sample of Ag/Pd/Rolled Ni.
Fig. 11 is a graph showing an X-ray Φ scan through YBCO(226) reflection indicating in-plane alignment of the YBCO superconductor in a sample of YBCO/CeO2/Ag/Pd/Ni.
For a better understanding of the present invention, together with other and further objects, advantages and capabilities thereof, reference is made to the following disclosure and appended claims in connection with the above-described drawings.
DETAILED DESCRIPTION OF THE INVENTION A biaxially textured substrate or sheath material is fabricated by industrially scalable rolling techniques. The substrate can then be coated/reacted by a variety of techniques to produce chemically compatible, textured barrier layers and/or alloys. An epitaxial layer of another material is then grown on the textured substrate (or on a barrier layer as the case may be) using any of a variety of techniques. The texture from the substrate (or the barrier layer) is then induced in the epitaxial layer. It is thereby possible to deposit a biaxially aligned superconductor with high critical current density.
Ag is generally chemically compatible with cuprate superconductors. Attempts to produce a sharp biaxially textured Ag strip by rolling and annealing have proven to be difficult. Hence, articles fabricated as described herein are especially important and distinct with respect to superconductivity.
Such articles are also important from the perspective of other physical properties, e.g., mechanical properties. These articles and methods are contemplated to have applications far beyond superconductivity; for example, they can be used in the fabrication of strong, tough materials for
SUBSTITUTE SHEET (RULE 26 mechanical, magnetic, and ferroelectric applications. It is well established that low energy boundaries — low angle and low-sigma coincident site lattice (CSL) — have superior physical properties, including enhanced mechanical toughness. Hence, a strengthened substrate is described herein, since in these biaxially textured substrates, a high proportion of grain boundaries have small misonentation angles. (The expected grain boundary misonentation distribution can be estimated based on the macroscopic texture determination.) Similar advantages are expected for other physical properties, e.g., magnetic, ferroelectric properties.
Referring to Fig. 2, a biaxially textured substrate 1 has an epitaxial buffer layer 2 deposited thereon, upon which is deposited a second epitaxial layer 3 which is a superconductor, ferroelectric device, or other electromagnetic or electro-optical device. In some cases, the buffer layer 2 is not necessary, and in other cases, multiple buffer layers are preferred or necessary.
Rolling Processes
During the rolling process, plastic flow causes reorientation of the lattice of individual grains of a polycrystalline material and tends to develop a texture or preferred orientation of the lattice in the grains. The progress of reorientation is gradual; the orientation change proceeds as plastic flow continues, until a texture is reached that is stable against indefinite continued flow of a given type. The nature of the stable deformation texture and the manner in which it is approached is characteristic of the material and of the nature of the flow throughout the deformation process (i.e., the magnitude of the three principal strains at all points within the specimen and at successive times during the process). The texture development is strongly influenced by temperature, particularly if the temperature of deformation is high enough for recrystallization to take place. Other effects of temperature include variation of the stacking fault energy and hence the operative deformation mechanisms. In general, plastic strains near the surface of a rolled specimen may differ from those in the interior and may produce textures that vary with depth below the surface. Hence specific rolling procedures are described herein below to ensure reasonably consistent textures through the thickness of the workpiece.
While forward rolling alone may result in homogeneous texture through the thickness of the sheet, we have found that reverse rolling (rolling direction is reversed after each pass) produces much better results in most materials. In most of what is described below, reverse rolling is preferred over forward rolling. The rolling speed and reduction per pass are also important parameters. While rolling speed may be important in the texture development, its effect is not dominating. In general, higher rolling speeds are desirable for economical purposes. Reduction per pass during rolling is also important for texture development. Generally, less than 30% reduction per pass is desirable, although in some cases higher reductions per pass may also be required. The lubrication employed during rolling is also an important variable. Depending on the texture desired, either no lubricant or some lubricant like light mineral oil, heavy mineral oil, kerosene, etc. are employed to ensure homogeneous texture development. Grain size of the starting material and prior heat treatments and deformation history is also important in determining the texture development. In general, prior to rolling, a fine grain size is desired and the initial heat treatments and deformations are designed to give a random texture in the starting material. For general information about rolling and textures derived thereby, see reference 17 above.
Annealing Processes The development of an annealing texture involves several fundamental mechanisms. An annealing texture may develop from recovery without recrystallization (in which case it would be expected to duplicate the texture present before annealing), from primary recrystallization, or from grain growth subsequent to recrystallization. Grain size distribution can remain normal throughout the process, or a few grains may grow very large while the rest remain approximately unchanged until devoured by the large ones. The latter type of grain growth, referred to as "secondary recrystallization" or "discontinuous", is generally considered to be abnormal.
Getting the Desired Texture
It is known that the critical current density through a grain boundary may be reduced significantly for misonentation angles greater than 5° - 10°. It is thus desirable to obtain superconducting deposits in which the number of grain boundaries with misorientation angles greater than 5° - 10° is minimized. For conductors in which the superconducting deposit is epitaxial with an underlying metallic or oxide buffer layer or substrate, it is desirable to minimize the number of grain boundaries with misorientations greater than 5° - 10°. This is accomplished if the texture of the substrate is so sharp that grain orientations vary by no more than 5° -10°. Useful superconducting layers may be obtained using substrates with larger spread in grain orientation, but the better the substrate texture, the better the properties of the superconductor deposit are expected to be.
In a cube texture, the cube plane lies parallel to the plane of the sheet and a cube edge is parallel to the rolling direction, i.e. , (100)[001j. This texture resembles a single crystal with subgrains, but may contain a minor amount of material in twin relation to the principal orientation. A fully developed cube texture, as described herein, has been developed with biaxial alignment with x-ray diffraction peak width of 2° full width at half maximum.
Brass texture is (110) < 112 > . It does not appear that brass texture is obtainable as shaφ as the cube texture.
Formation nf Textured Ag Artirle hv Rolling Strong biaxial texture in Ag is obtainable under closely controlled rolling process conditions. At room temperature, the stacking fault energies in even high purity Ag are such that under most conditions of rolling and annealing, no cube component of the texture forms. As-rolled Ag at room temperature generally develops the (110) < 112 > texture with two twin-related components. On annealing this texture generally changes to near (113) < 211 > , which is likely more appropriately designated as (225) < 734 > . However, upon long annealing times at temperatures greater than 450°C, the primary recrystallization texture of Ag is replaced by secondary grains having the orientations of the deformation texture. Neither the as-rolled texture nor the primary recrystallization texture are shaφ. Often, mixed texture components are produced and this results in a significant number of high angle boundaries in the material. On annealing at high temperatures, these high angle boundaries migrate rapidly and the texture changes.
a. Formation of a sharp cube texture in Ag
Since the development of texture is essentially an inteφlay between deformation twinning and cross-slip, the stacking fault energy is very important. It is well known that the stacking fault energy increases with increase in temperature. One can show that at temperatures above 150°C, the stacking fault energy of Ag is almost same as that of Cu at room temperature. Hence, when rolling Ag at temperatures 150 - 500°C the development of cube texture is generally expected. Above 300°C, it is highly likely that only the cube component remains.
General conditions are listed below for rolling Ag to produce a biaxial cube texture:
Rolling temperature: 50°C - 500°C, preferably 100°C - 400°C, more preferably 180°C -
250°C. Annealing temperature: 100°C - 960°C, preferably 100°C - 600°C, more preferably
200°C - 400°C.
Preferable purity of Ag is at least 99.99%. As Ag purity decreases, the temperature of deformation increases. If Ag is 99.0% pure, the required deformation temperature may be over 200°C. EXAMPLE I
A substrate of Ag is rolled under the following conditions to form a shaφ cube texture thereon:
Rolling temperature: 220°C Rolling speed: 15 ft./min.
Reduction Per Pass: 10% Rolling direction: Reverse rolling Lubrication: kerosene Annealing temperature 300 °C Purity of Ag - at least 99.99%
b. Formation of a sharp brass texture in Ag
Decreasing temperatures results in decrease in the stacking fault energy. This favors the brass component of the texture. In order to obtain a shaφ texture one needs to isolate a single texture component. Decreasing the temperature of deformation increases the amount of brass component fraction. Rolling temperature should be no more than 20°C, and annealing temperature should be at least 100°C.
The higher the purity of the Ag, the lower the required temperature of deformation.
EXAMPLE II
A strip of Ag was rolled under the following conditions to form a shaφ brass texture thereon: Rolling temperature: 160°C
Rolling speed: 15 ft./hr.
Reduction Per Pass: 10%
Rolling direction: Reverse rolling
Lubrication: light mineral oil Annealing temperature 300°C
Purity of Ag - at least 99.99%
c) Formation of a (412) < 548 > texture in Ag
Room temperature rolling of silver imparts a (412) < 548 > biaxial texture in the rolled sheet. Annealing temperature should be 100°C - 900°C; preferably 100°C - 400°C; more preferably 200°C - 300°C.
EXAMPLE III A strip of Ag was rolled under the following conditions to form a (412) < 548 > texture thereon: Rolling temperature: room temperature Rolling speed: 15 ft./min.
Reduction Per Pass: 10% Rolling direction: Reverse rolling Lubrication: none Annealing temperature 300°C Purity of Ag - at least 99.99%
Fig. 3 shows Ag (111) X-ray pole figure of a rolled and annealed tape. Fig. 4 shows expected intensities for a (412) < 548 > texture on a Ag (111) pole figure.
Formation of a Cube Texture in Cubic Metals
A well developed cube texture in metals such as Cu, Ni and Fe can be achieved by heavy rolling process reductions (at least 80%) prior to final annealing. In Al, small reductions prior to final annealing are required to produce the cube texture. In Ag, and in Ag-, Cu-, Ni-, Al- and Fe-based alloys, components of cube texture can be achieved by rolling at higher temperatures (in excess of 100°C). General conditions for this process are dependent upon the stack fault energy of the metal. The higher the purity of the metal, the lower the required temperature of deformation. Total deformation prior to annealing should be at least 70%, preferably at least 80%. Annealing temperature should be at least
100°C.
EXAMPLE IV
Starting with high purity Cu rods, the above described rolling process was used to produce a shaφ cube texture. Rolling temperature: room temperature
Rolling speed: 15 ft./min. Reduction Per Pass: 10% Rolling direction: Reverse rolling Lubrication: light mineral oil Annealing temperature 300° C Purity of Ag - at least 99.99%
Fig. 5 shows a pole figure depicting the strong in-plane as well as out-of-plane texture in the rolled and annealed Cu sheet.
Formation nf n Textured Allov Article
In general, it is difficult to obtain a shaφ cube texture in alloys. High-purity metals like Cu, Al, Ni, Fe, etc. can be rolled to produce very shaφ cube textures as described above. Small amounts of impurity elements can severely suppress the cube texture. For example, 5% Zn, 1% Sn, 4% Al, 0.5% Be, 0.5% Cd, 0.0025% P, 0.3% Sb, 1.5% Mg, 4.2% Ni, 0.18% Cd and 0.047% As in Cu, prevent the formation of the cube texture. Textured alloys can, however, be formed by rolling the pure metal and obtaining the desired texture, followed by diffusion of the desired alloying elements to form the required alloy.
Ag can be coated on the textured Cu sheet followed by heat treatment at high temperatures, thereby diffusing Ag into the Cu. The process can be continued until one is left with, in effect, a Ag-rich substrate with some Cu in it. Diffusion of Ag into Cu does not change the bulk cube texture of the sheet. Varying amounts of Ag can be diffused into the Cu. Alternatively one can saturate the Cu with Ag. Subsequent deposition of Ag will now result in a top layer which is primarily Ag. In this way cube- textured Ag can be formed.
EXAMPLE V
A thick layer Ag( lOOμm) was electroplated using a standard electroplating technique on to a cube textured Cu substrate made according to the method described herein. The composite structure was then annealed at 800 °C in vacuum. The resulting material was a Ag-Cu alloy with all the electroplated Ag having diffused into the Cu. Both the lattice parameter as well the color of the copper strip was changed on annealing.
However, the shaφ cube texture of the original Cu strip was retained.
The instant method can be extended to many alloys, for example, alloys commonly known as nichrome (a Ni-Cr alloy), and inconel (a Cu-Ni alloy). Starting with biaxially textured Ni, one can diffuse Cr and form biaxially textured nichrome. Oxidation resistant layers on the surface of the biaxially textured Ni are formed by diffusing appropriate amounts of Cr, Mo, Al and Fe.
EXAMPLE VI
A layer of Cr was electroplated on a cube textured Ni substrate made according to the method described herein by a standard commercial electroplating technique.
Subsequent annealing at 400 °C in vacuum resulted in diffusion of the Cr into the Ni strip. This resulted in a material having a Cr-rich exterior, while maintaining the desired cube texture.
Tuning of the lattice parameters of oriented substrates produced by rolling can also be done. For example, depositing a thin layer of Pd or Pt, etc., and subsequent diffusion of this layer into the textured
Ni will result in the local alteration of the lattice parameter, which may be important for achieving better epitaxy of the barrier layer or the device layer.
T e instant method can be extended to Al- and Fe-based alloys to obtain chemically compatible, cube textured substrates.
EXAMPLE VII
Al is rolled according to the method described herein, using small final reductions prior to annealing to obtain a shaφ cube texture. Ni is deposited on the surface by a conventional electroplating method. The composite structure is then heated at temperatures greater than 100°C in vacuum. The resulting structure is a textured Ni-Al alloy.
Formation of a Brass Textured Metnl Substrate hv Rolling
Formation of brass texture in the substrate in Cu-, Ni-, Fe-, Al- and Ag- based alloys can be achieved by cold rolling by heavy reductions (at least 70%, preferably at least 80%) at room temperature followed by recrystallization annealing. In some cases, deformation temperatures as low as -230°C may be required to produce a sharp texture. Annealing temperature should generally be at least 100°C.
Some of the alloys have excellent oxidation resistance, and if this is the case, highly textured substrates can be directly used as templates for a superconductor phase. In other cases, a chemically and structurally compatible barrier layer which can be grown epitaxially on the textured substrate (for example, a native oxide) can be used.
EXAMPLE Vϊll
Brass texture in 70% Cu - 30% Zn is attained by rolling at room temperature using the following conditions:
Rolling speed: 15 ft./min. Reduction per pass: 10%; total reduction — 90% Annealing temperature: 400°C.
Formation of the fioss Texture (110)10011 This texture in silicon-iron steels can be produced by cycles of cold rolling and annealing.
Processing variables are critical for getting maximum number of grains on cube-on-edge orientation (110) [001], and the minimum number of undesirable orientations, such as the major component of the ordinary primary recrystallization texture, the cube-on-point orientation (111) < 211 > . A desirable primary recrystallization texture is that consisting of small grains. This is obtained by having a suitable distribution of second phase materials such as manganese, sulfur, silica or vanadium nitride as grain growth inhibitors. The desired texture in this case is produced by secondary recrystallization, with the (110)[001] grains growing to a size 10 to 100 times the sheet thickness during annealing in suitable atmospheres and temperatures.
Formation of a Biaxially Textured Layer Various layers comprised of different metals such as Cu, Ni, Al, Fe, etc., and ceramics can be deposited on the textured metal substrate. The texture of the substrate can be induced into the layer during deposition or during subsequent annealing.
EXAMPLE IX
A fully cube textured Cu sample was made according to the method described above. The sample was placed in a laboratory-scale evaporator in a vacuum of about 10"* torr. Ag was deposited on the sample at room temperature by evaporation, followed by annealing at 200° C in vacuum to produce a cube textured Ag layer. Results are shown in Figs. 6 and 7.
14
SUBSTITUTE SHEET (RULE 261 Fig. 6 shows a pole figure of an as-deposited Ag layer on the Cu sheet. It is found to have a very shaφ (111) texture. Fig. 7 shows the pole figure of the same sheet after annealing. It is found that the strong cube texture in the Cu is imparted on the Ag layer. This textured Ag can be used as a barrier layer, and a superconductor phase or other device layer can be grown on it. If the oxide layer on the Cu is removed prior to deposition of Ag, as-deposited Ag is cube textured.
In the case of textured Ni, a thin layer of another face-centered cubic material such as Pd, Pt, Cr, and/or Cu may be necessary before Ag is deposited.
EXAMPLE X
A biaxial textured laminate article was formed according to the invention by deposition of a Pd layer upon a textured Ni substrate, followed by deposition of an Ag layer upon the Pd layer. The deposition process used dual-source dc magnetron sputtering, and the deposition conditions were as follows:
Metal sputtering targets: Pd and Ag
Sputtering gas: Ar Sputtering gas pressure: 6-10 x 10'3 mbar
Substrate temperatures: 500°C for Pd deposition, 300°C for Ag deposition
Deposition rates: 30 nm/min for Pd deposition, 300 nm/min for Ag deposition
Layer thicknesses: 200 nm for Pd, 35 μm for Ag.
Results are shown in Figs. 8 - 10.
Figs. 8 - 10 show (202) phi scans of a rolled, cube-textured Ni strip, with a thin layer of Pd, and then a layer of Ag on the Pd. The texture of the substrate can clearly be seen to be imparted on the layer. A biaxially-textured alloy coating can also be formed by depositing at least two films of dissimilar metals on the surface of the biaxially-textured substrate, and subsequently annealing the coated substrate to a temperature sufficiently high to allow interdiffusion of the layers. If the layers are not epitaxial as- deposited, then epitaxial growth will occur during the annealing process.
EXAMPLE XI
On a biaxially-textured Ni substrate, a layer of 300 nm thick Pd was sputter- deposited at 500°C. A layer of 1000 nm thick Ag is then sputter-deposited at 300°C. This Ag/Pd/Ni epitaxial laminate structure was then annealed at 700°C in vacuum. The resulting article consisted of a biaxially-textured Ag-Pd alloy coating on the biaxially- textured Ni.
Formation of n Biaxially Textured Laminate Article
A laminate article with a biaxially-textured ceramic layer is formed according to the invention by growing an epitaxial layer, such as yttria-stabilized zirconia (YSZ), MgO, TiN, ZrO2, CeO2, SrTiO3, or
LaA103, on the previous described biaxially-textured metal substrates. Epitaxial ceramic layers can be grown using one of a variety of techniques including pulsed-laser deposition, sputtering, vapor deposition, chemical vapor deposition, sol-gel, spray pyrolysis, spin coating, and electrodeposition. A ferroelectric, electro-optic, superconducting, or other electromagnetic layer can then be epitaxially grown onto this biaxially-textured ceramic layer using one of the film growth techniques listed above. The final laminate article consists of a biaxially-textured ferroelectric, electro-optic, or superconducting film on a ceramic layer on a metal substrate. The rolling processes for fabricating the textured metal substrate described earlier enables the fabrication of long-length ferroelectric, electro-optic, superconducting, or other electromagnetic biaxially-textured laminate articles. When the final deposited layer is a superconductor, the resulting article is a superconducting tape with few or no weak-link high-angle grain boundaries. The ability to fabricate this article is a significant step in the development of superconducting high-current conductors for use at temperatures greater than 77 K in high magnetic fields.
EXAMPLE XII
A biaxially textured laminate made according to Example X was introduced into a pulsed-laser deposition chamber. After sputter cleaning the Ag surface with an Ar ion gun, the laminate article was heated to 750°C. A 500 nm thick CeO2 layer was then deposited by pulsed-laser deposition with an oxygen background pressure of 4x10"* Torr. A 1000 nm thick YBCO film was then deposited at 750°C in 200 mTorr oxygen. The resulting laminate, biaxially-textured YBCO/CeO2/Ag/Pd/Ni multilayer structure, was cooled in 1 atm oxygen. Results are shown in Fig. 11.
Figure 11 shows the x-ray phi scan of the 226 reflection of the YBCO layer, indicating that the YBCO was c-axis oriented, biaxially-textured. Formation of C-Axis Oriented. Biaxinllv-Textiired Pernvskite-Like Films on Biaxia lv-Textured Ag
A two-step film growth process involving a non-superconducting ReBCO buffer template layer has been developed which enables the growth of c-axis oriented, biaxially-textured perovskite-like films on single crystal or biaxially-textured Ag. The substrate surface should be (110) or (100) biaxially-textured Ag. The substrate is heated to 600°C - 700°C, preferably 625°C - 675°C. Pulsed-laser deposition is then utilized to grow a ReBCO layer in an oxygen pressure of 50-300 mTorr, preferably 150-250 mTorr, onto the Ag surface. While this film does not have good superconducting properties, it is continuous with the c-axis perpendicular to the substrate surface, and aligned in-plane with respect to the crystal axes of the Ag. This ReBCO layer serves as a template for the growth of subsequent epitaxial perovskite-like layers. Note that the function of this ReBCO buffer template is to induce crystallographic alignment in subsequent layers rather than act as a superconductor. C-axis oriented, biaxially-textured films of selected perovskite-like materials, such as YBCO or SrTiO3, can then be grown on this buffer template layer at a growth temperature which optimizes the desired properties of the perovskite-like film. ReBCO films which are c-axis oriented, biaxially-textured, and superconducting with a superconducting transition temperature of 80K - 90K (-193°C to -183°C) are obtained on Ag using the above procedure by growing an additional ReBCO layer on the nonsuperconducting ReBCO template buffer layer at 730°C - 800°C in 50-300 mTorr oxygen using pulsed-laser deposition. In contrast, growth of ReBCO directly on Ag at 730 °C - 800 °C results in a film with a superconducting transition temperature less than 80K. The growth temperature necessary for obtaining the c-axis oriented ReBCO buffer template layer on Ag is not obvious as similar growth conditions produce a-axis oriented ReBCO on SrTiO3 and similar substrates. The use of the nonsuperconducting ReBCO template buffer layer to achieve subsequent c-axis oriented, biaxially-textured perovskite-like layers on a Ag surface is a key element of this embodiment of the invention.
Use of the ReBCO buffer template enables the growth of c-axis oriented, biaxially textured (epitaxial) SrTi03 films on biaxially-textured Ag or other metals with a biaxially-textured Ag film. Direct growth of SrTiO, on Ag without the use of the buffer template results in (110) and (111) oriented films. SrTi03 is an excellent buffer layer for high-temperature superconducting materials.
The ReBCO buffer template layer provides a means to form c-axis oriented, biaxially-textured metal/perovskite-like heterostructures on biaxially-textured Ag. The perovskite-like film is grown on the ReBCO template using one of several film growth techniques such as sputtering, evaporation, spray pyrolysis, spin-coating, or chemical vapor deposition. Other possible uses of this invention include the growth of single crystal, biaxially textured (epitaxial) perovskite-like electro-optic or ferroelectric materials on biaxially-textured Ag important in the development of epitaxial metal/perovskite-like/metal multilayer devices.
EXAMPLE XIII
A single crystal (100) oriented Ag foil, produced by depositing Ag on (100) NaCl and dissolving the NaCl in water, was heated to 650°C in a vacuum chamber. A 300 nm thick, c-axis oriented, biaxially-textured YBCO template layer was then deposited at 650°C in 200 mTorr oxygen. The substrate was then heated to 780°C. A second 1000 nm thick YBCO layer was then deposited onto the YBCO template buffer layer at 780°C in 200 mTorr. The laminate article was then cooled in 1 at oxygen. The resulting YBCO film was predominantly c-axis oriented, biaxially-textured with a superconducting transition temperature of approximately 85K (-188°C).
Formation of Binxiallv Textured Superconductor Deposit
In some cases, barrier layers of ceramics such as YSZ, MgO, TIN, Zr02, CeO2, and SrT103, are deposited by techniques such as vapor deposition, sol-gel, electrodeposition, etc., followed by annealing to form epitaxial, biaxially textured layers on the textured substrate (metal/alloy). The superconductor is then deposited on the textured template.
The superconductor may be deposited by a variety of techniques (vapor deposition, laser ablation, sputtering, sol-gel, dip coating, electrodeposition, electrophoretic deposition, spray pyrolysis, doctor blade techniques, etc.). In some of the techniques (i.e., laser deposition, etc.) the as-deposited superconductor layer may be textured, but in other cases an additional oxygen anneal at appropriate oxygen partial pressures will be required to induce the texture from the substrate into the superconductor. The method also applies to precursor deposits to which one or more cations must be added from the vapor during reaction to form the superconducting phase. A complete demonstration of the textured substrate/textured layers is shown in Figure 11 , which shows phi scans of the 226 reflection of YBCO on Ce02 on Ag on Pd on Ni.
While there has been shown and described what are at present considered the preferred embodiments of the invention, it will be obvious to those skilled in the art that various changes and modifications can be made therein without departing from the scope of the inventions defined by the appended claims.

Claims

What is claimed is:
1. A method of preparing a biaxially textured alloy article comprising the steps of: a. rolling and annealing a metal preform to form a biaxially textured substrate having a surface, said metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto said surface of said biaxially textured substrate an alloying agent to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to cause interdiffusion of said metal and said alloying agent, while preventing homogeneous melting, to form a biaxially textured alloy article.
2. A method in accordance with claim 1 wherein said metal comprises primarily Cu, Ni, Al, or Fe.
3. A method in accordance with claim 1 wherein said alloying agent comprises Ag, Pd, Pt, or an alloy thereof.
4. A method in accordance with claim 1 further comprising the additional step of: d. depositing onto said biaxially textured alloy article at least one of an electromagnetic device or an electro-optical device.
5. A method in accordance with claim 1 wherein said article comprises a superconductor.
6. A method of preparing a biaxially textured laminate article comprising the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, said metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and, b. depositing onto said surface of said biaxially textured substrate an epitaxial layer of material to form a biaxially textured laminate.
7. A method in accordance with claim 6 wherein said metal comprises primarily Cu, Ni, Al, or
Fe.
8. A method in accordance with claim 6 wherein said material comprises Ag, Pd, Pt, or an alloy thereof.
9. A method in accordance with claim 6 further comprising the additional step of: c. depositing onto said biaxially textured laminate article at least one of an electromagnetic device or an electro-optical device.
10. A method in accordance with claim 6 wherein said article comprises a superconductor.
11. A method of preparing a biaxially textured laminate article comprising the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, said metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto said surface of said biaxially textured substrate a layer of material to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to induce epitaxy in said material to form a biaxially textured laminate.
12. A method in accordance with claim 11 wherein said metal comprises primarily Cu, Ni, Al, or Fe.
13. A method in accordance with claim 11 wherein said material comprises Ag, Pd, Pt, or an alloy thereof.
14. A method in accordance with claim 11 further comprising the additional step of: d. depositing onto said biaxially textured laminate article at least one of an electromagnetic device or an electro-optical device.
15. A method in accordance with claim 11 wherein said article comprises a superconductor.
16. A method in accordance with claim 11 wherein step b further comprises depositing onto said surface of said biaxially textured substrate at least two layers of different materials, and wherein said materials form a biaxially textured alloy upon annealing.
17. A method of preparing a biaxially textured laminate article comprising the steps of: a. providing a substrate having a biaxially textured Ag surface; b. depositing onto said surface of said substrate an epitaxial buffer template layer of ReBCO using a pulsed laser deposition technique at a temperature in the range of about 600° C to about 700°C, and at an oxygen pressure in the range of about 50 mTorr to about 300 mTorr; and, c. depositing onto said buffer template layer another epitaxial layer of perovskite-like material using a pulsed laser deposition technique.
18. A method in accordance with claim 17 wherein said perovskite-like material comprises ReBCO deposited at a temperature in the range of about 730 °C to about 850°C, and at an oxygen pressure in the range of about 50 mTorr to about 300 mTorr, and wherein said another epitaxial layer is superconducting.
19. A biaxially textured alloy article comprising a rolled and annealed biaxially textured metal substrate having a surface, said metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and a biaxially textured layer of an alloy on a surface thereof, the biaxially textured layer being of a different composition than said substrate.
20. An article in accordance with claim 19 wherein said metal comprises primarily Cu, Ni, Al, or Fe.
21. An article in accordance with claim 19 wherein said alloy comprises Ag, Pd, or Pt.
22. An article in accordance with claim 19 further comprising at least one of an electromagnetic device or an electro-optical device epitaxially joined to said alloy.
23. An article in accordance with claim 19 wherein said article comprises a superconductor.
24. A biaxially textured laminate article comprising a rolled and annealed biaxially textured metal substrate, said metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure, having an epitaxial layer of another material on a surface thereof.
25. An article in accordance with claim 24 wherein said metal comprises primarily Cu, Ni, Al, or Fe.
26. An article in accordance with claim 24 wherein said another material comprises Ag, Pd, Pt, or an alloy thereof.
27. An article in accordance with claim 24 further comprising at least one of an electromagnetic device or an electro-optical device epitaxially joined to said epitaxial layer.
28. An article in accordance with claim 24 wherein said article comprises a superconductor.
29. A superconductor article comprising a rolled and annealed, biaxially textured metal substrate, having an epitaxial barrier layer thereon, and an epitaxial superconductor layer on said barrier layer.
30. A superconductor article comprising a rolled and annealed biaxially textured Ag substrate having an epitaxial superconductor layer thereon.
*****
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DE19740964A1 (en) * 1997-09-17 1999-03-18 Access Ev Substrate especially for supporting a superconductive functional layer
WO1999016941A1 (en) * 1997-10-01 1999-04-08 American Superconductor Corporation Substrates for superconductors
US5968877A (en) * 1995-04-10 1999-10-19 Lockheed Martin Energy Research Corp High Tc YBCO superconductor deposited on biaxially textured Ni substrate
GB2336849A (en) * 1998-04-27 1999-11-03 Telcon Ltd A nickel alloy substrate layer for oxide superconductors
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6172009B1 (en) 1997-06-18 2001-01-09 Massachusetts Institute Of Technology Controlled conversion of metal oxyfluorides into superconducting oxides
US6180570B1 (en) * 1998-07-09 2001-01-30 Ut-Battelle, Llc Biaxially textured articles formed by plastic deformation
US6256521B1 (en) 1997-09-16 2001-07-03 Ut-Battelle, Llc Preferentially oriented, High temperature superconductors by seeding and a method for their preparation
JP2011044705A (en) * 1999-01-12 2011-03-03 Ngimat Co Epitaxial thin film
US8865627B2 (en) 2008-11-28 2014-10-21 Sumitomo Electric Industries, Ltd. Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire

Families Citing this family (190)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316391B1 (en) 1994-09-20 2001-11-13 Hitachi, Ltd. Oxide superconducting wire and method of manufacturing the same
US6716795B2 (en) 1999-09-27 2004-04-06 Ut-Battelle, Llc Buffer architecture for biaxially textured structures and method of fabricating same
US6077344A (en) * 1997-09-02 2000-06-20 Lockheed Martin Energy Research Corporation Sol-gel deposition of buffer layers on biaxially textured metal substances
US6451450B1 (en) 1995-04-10 2002-09-17 Ut-Battelle, Llc Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom
JP3587956B2 (en) * 1997-06-10 2004-11-10 古河電気工業株式会社 Oxide superconducting wire and its manufacturing method
US6440211B1 (en) * 1997-09-02 2002-08-27 Ut-Battelle, Llc Method of depositing buffer layers on biaxially textured metal substrates
US6270908B1 (en) 1997-09-02 2001-08-07 Ut-Battelle, Llc Rare earth zirconium oxide buffer layers on metal substrates
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
EP1019920A4 (en) * 1997-10-01 2001-02-28 American Superconductor Corp Substrates with improved oxidation resistance
US6261704B1 (en) 1998-06-12 2001-07-17 Ut-Battelle, Llc MgO buffer layers on rolled nickel or copper as superconductor substrates
US6159610A (en) * 1998-06-12 2000-12-12 Ut-Battelle, Llc Buffer layers on metal surfaces having biaxial texture as superconductor substrates
US6150034A (en) * 1998-06-12 2000-11-21 Ut-Battelle, Llc Buffer layers on rolled nickel or copper as superconductor substrates
IT1302855B1 (en) * 1998-06-15 2000-10-10 Enea Ente Nuove Tec NON-MAGNETIC METAL SUBSTRATE FOR HIGH TEMPERATURE SUPERCONDUCTORS AND RELATED PRODUCTION PROCESS.
US6296701B1 (en) 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
KR100276003B1 (en) * 1998-09-30 2000-12-15 윤덕용 Apparatus for forming thin film on a tape-type substrate and method for forming the same
DE19859452C1 (en) * 1998-12-22 2000-02-10 Siemens Ag Stripform high critical temperature (Tc) superconductor manufacturing method
US7033637B1 (en) * 1999-01-12 2006-04-25 Microcoating Technologies, Inc. Epitaxial thin films
DE29923162U1 (en) 1999-02-01 2000-04-27 Siemens AG, 80333 München Elongated superconductor structure with high-T¶c¶ · superconductor material and metallic carrier
JP3521182B2 (en) * 1999-02-26 2004-04-19 株式会社東芝 Oxide superconducting wire and superconducting device
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials
CN1117879C (en) * 1999-04-03 2003-08-13 德累斯顿固体材料研究所 Nickel-based metallic material and method for producing same
CN1076126C (en) * 1999-05-21 2001-12-12 北京工业大学 Polycrystal silver based belt and preparation and use thereof
US6312819B1 (en) * 1999-05-26 2001-11-06 The Regents Of The University Of California Oriented conductive oxide electrodes on SiO2/Si and glass
US6436317B1 (en) 1999-05-28 2002-08-20 American Superconductor Corporation Oxide bronze compositions and textured articles manufactured in accordance therewith
US6765151B2 (en) * 1999-07-23 2004-07-20 American Superconductor Corporation Enhanced high temperature coated superconductors
AU1750901A (en) 1999-07-23 2001-03-05 American Superconductor Corporation Dust cover/pellicle for a photomask
US6828507B1 (en) 1999-07-23 2004-12-07 American Superconductor Corporation Enhanced high temperature coated superconductors joined at a cap layer
US6562761B1 (en) 2000-02-09 2003-05-13 American Superconductor Corporation Coated conductor thick film precursor
AU6219200A (en) * 1999-08-24 2001-03-19 Electric Power Research Institute, Inc. Surface control alloy substrates and methods of manufacture therefor
US6921497B2 (en) * 1999-10-13 2005-07-26 Electromagnetics Corporation Composition of matter tailoring: system I
US6974501B1 (en) 1999-11-18 2005-12-13 American Superconductor Corporation Multi-layer articles and methods of making same
DE60045370D1 (en) * 1999-11-29 2011-01-27 Fujikura Ltd POLYCRYSTALLINE THIN FILM AND METHOD FOR THE PRODUCTION THEREOF, AND SUPRALOUS OXIDE AND METHOD FOR THE PRODUCTION THEREOF
KR100352976B1 (en) * 1999-12-24 2002-09-18 한국기계연구원 Electrical Plating Process and Device for Ni Plate Layer Having Biaxial Texture
EP1122799A1 (en) * 2000-02-01 2001-08-08 Zentrum für Funktionswerkstoffe, Gemeinnützige Gesellschaft mbH Stainless steel substrate for superconducting films
JP3489525B2 (en) * 2000-02-22 2004-01-19 住友電気工業株式会社 Superconducting wire and method of manufacturing the same
US6531945B1 (en) * 2000-03-10 2003-03-11 Micron Technology, Inc. Integrated circuit inductor with a magnetic core
US7381492B2 (en) * 2000-03-24 2008-06-03 University Of Houston Thin film solid oxide fuel cell and method for forming
GB0010494D0 (en) * 2000-04-28 2000-06-14 Isis Innovation Textured metal article
US6455166B1 (en) 2000-05-11 2002-09-24 The University Of Chicago Metallic substrates for high temperature superconductors
US6447714B1 (en) * 2000-05-15 2002-09-10 Ut-Battelle, Llc Method for forming biaxially textured articles by powder metallurgy
US6331199B1 (en) 2000-05-15 2001-12-18 Ut-Battelle, Llc Biaxially textured articles formed by powder metallurgy
US6624122B1 (en) * 2000-06-21 2003-09-23 The Regents Of The University Of California High critical current superconducting tapes
US6784139B1 (en) 2000-07-10 2004-08-31 Applied Thin Films, Inc. Conductive and robust nitride buffer layers on biaxially textured substrates
US6673387B1 (en) 2000-07-14 2004-01-06 American Superconductor Corporation Control of oxide layer reaction rates
US6410487B1 (en) 2000-07-20 2002-06-25 The University Of Chicago Large area bulk superconductors
US6361598B1 (en) 2000-07-20 2002-03-26 The University Of Chicago Method for preparing high temperature superconductor
KR100422333B1 (en) * 2000-07-31 2004-03-10 이노스텍 (주) Method for manufacturing a metal film having giant single crystals and the metal film
US6517944B1 (en) 2000-08-03 2003-02-11 Teracomm Research Inc. Multi-layer passivation barrier for a superconducting element
US6985761B2 (en) * 2000-08-14 2006-01-10 Pirelli S.P.A. Superconducting cable
JP2002075091A (en) * 2000-08-29 2002-03-15 Sumitomo Electric Ind Ltd Method for manufacturing oxide superconducting wire
US6730851B2 (en) 2000-10-06 2004-05-04 Pirelli Cavi E Sistemi S.P.A. Superconducting cable and current transmission and/or distribution network including the superconducting cable
EP1195819A1 (en) * 2000-10-09 2002-04-10 Nexans Buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor and process of manufacturing said structure
US6645639B1 (en) * 2000-10-13 2003-11-11 Applied Thin Films, Inc. Epitaxial oxide films via nitride conversion
US6573209B1 (en) 2000-10-13 2003-06-03 Applied Thin Films, Inc. Zirconium nitride and yttrium nitride solid solution composition
US20020056401A1 (en) * 2000-10-23 2002-05-16 Rupich Martin W. Precursor solutions and methods of using same
US7041204B1 (en) * 2000-10-27 2006-05-09 Honeywell International Inc. Physical vapor deposition components and methods of formation
JP4713012B2 (en) * 2000-10-31 2011-06-29 財団法人国際超電導産業技術研究センター Tape-shaped oxide superconductor
DE10061399C1 (en) * 2000-12-07 2002-06-27 Dresden Ev Inst Festkoerper Single layer or multiple layer metal strip used for epitaxial coating with a biaxially textured layer made from high temperature superconducting material consists of a base material made from nickel, copper, silver or their alloys
US7009104B2 (en) * 2000-12-27 2006-03-07 Pirelli Cavi E Sistemi S.P.A. Superconducting cable
ES2170727B1 (en) * 2001-01-25 2003-06-16 Farga Lacambra S A SUBSTRATES FOR SUPERCONDUCTORS AND PROCEDURE FOR MANUFACTURING.
GB2374557A (en) * 2001-04-19 2002-10-23 Imperial College Producing superconductors by epitaxial growth
US6500568B1 (en) 2001-06-06 2002-12-31 3M Innovative Properties Company Biaxially textured metal substrate with palladium layer
US6617283B2 (en) * 2001-06-22 2003-09-09 Ut-Battelle, Llc Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
EP1271666A3 (en) * 2001-06-22 2006-01-25 Fujikura Ltd. Oxide superconductor layer and its production method
US6579360B2 (en) * 2001-07-13 2003-06-17 The University Of Chicago Fabrication of high temperature superconductors
US20030130129A1 (en) * 2001-07-13 2003-07-10 Massachusetts Institute Of Technology Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing
DE10136891B4 (en) * 2001-07-25 2004-07-22 Siemens Ag Method for producing a flat base material made of metal
DE10136890B4 (en) * 2001-07-25 2006-04-20 Siemens Ag Method and apparatus for producing a crystal textured textured metal strip and ribbon
JP2003055095A (en) * 2001-08-07 2003-02-26 Sumitomo Electric Ind Ltd Thin film deposition process
US6610414B2 (en) 2001-08-16 2003-08-26 Ut-Battelle, Llc Biaxially textured articles formed by power metallurgy
GB0120697D0 (en) * 2001-08-24 2001-10-17 Coated Conductors Consultancy Superconducting coil fabrication
DE10140956A1 (en) * 2001-08-27 2003-03-27 Univ Braunschweig Tech Carolo Wilhelmina Process for coating oxidizable materials with layers containing oxides
DE10143680C1 (en) * 2001-08-30 2003-05-08 Leibniz Inst Fuer Festkoerper Process for the production of metal strips with high-grade cube texture
US6794339B2 (en) * 2001-09-12 2004-09-21 Brookhaven Science Associates Synthesis of YBa2CU3O7 using sub-atmospheric processing
DE10148889A1 (en) * 2001-09-21 2003-06-26 Leibniz Inst Fuer Festkoerper Nickel-based carrier material and process for its production
JPWO2003050826A1 (en) * 2001-12-10 2005-04-21 三菱電機株式会社 Metal substrate for oxide superconducting thick film and method for producing the same
DE10200445B4 (en) * 2002-01-02 2005-12-08 Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. Metal strip for epitaxial coatings and process for its production
US6645313B2 (en) * 2002-02-22 2003-11-11 Ut-Battelle, Llc Powder-in-tube and thick-film methods of fabricating high temperature superconductors having enhanced biaxial texture
US6670308B2 (en) 2002-03-19 2003-12-30 Ut-Battelle, Llc Method of depositing epitaxial layers on a substrate
US6925316B2 (en) * 2002-04-08 2005-08-02 Christopher M. Rey Method of forming superconducting magnets using stacked LTS/HTS coated conductor
US20040129559A1 (en) * 2002-04-12 2004-07-08 Misner Josh W. Diffusion bonded assemblies and fabrication methods
US6946428B2 (en) * 2002-05-10 2005-09-20 Christopher M. Rey Magnesium -boride superconducting wires fabricated using thin high temperature fibers
DE10226392C1 (en) * 2002-06-13 2003-08-28 Siemens Ag Longitudinally extending superconducting structure comprises a biaxially textured support made from nickel, an intermediate system deposited on the support and a superconducting layer made from a high Tc superconducting material
US7087113B2 (en) * 2002-07-03 2006-08-08 Ut-Battelle, Llc Textured substrate tape and devices thereof
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
JP3854551B2 (en) * 2002-08-06 2006-12-06 財団法人国際超電導産業技術研究センター Oxide superconducting wire
US6764770B2 (en) 2002-12-19 2004-07-20 Ut-Battelle, Llc Buffer layers and articles for electronic devices
US20060049057A1 (en) * 2002-12-20 2006-03-09 Midwest Research Institute Electrodeposition of biaxial textured films
WO2004073024A2 (en) * 2003-02-06 2004-08-26 Brown University Method and apparatus for making continuous films ofa single crystal material
US20040157747A1 (en) * 2003-02-10 2004-08-12 The University Of Houston System Biaxially textured single buffer layer for superconductive articles
WO2004088677A1 (en) * 2003-03-31 2004-10-14 The Furukawa Electric Co., Ltd. Metal base plate for oxide superconductive wire rod, oxide superconductive wire rod and process for producing the same
US6849580B2 (en) * 2003-06-09 2005-02-01 University Of Florida Method of producing biaxially textured buffer layers and related articles, devices and systems
US8153281B2 (en) * 2003-06-23 2012-04-10 Superpower, Inc. Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape
US6906008B2 (en) * 2003-06-26 2005-06-14 Superpower, Inc. Apparatus for consecutive deposition of high-temperature superconducting (HTS) buffer layers
US6740421B1 (en) 2003-07-14 2004-05-25 Ut-Battelle, Llc Rolling process for producing biaxially textured substrates
US20050014653A1 (en) 2003-07-16 2005-01-20 Superpower, Inc. Methods for forming superconductor articles and XRD methods for characterizing same
US20050016759A1 (en) * 2003-07-21 2005-01-27 Malozemoff Alexis P. High temperature superconducting devices and related methods
US7711088B2 (en) * 2003-07-22 2010-05-04 X-Ray Optical Systems, Inc. Method and system for X-ray diffraction measurements using an aligned source and detector rotating around a sample surface
US7025826B2 (en) * 2003-08-19 2006-04-11 Superpower, Inc. Methods for surface-biaxially-texturing amorphous films
DE10339867B4 (en) * 2003-08-25 2007-12-27 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Method for the production of metallic flat wires or tapes with cube texture
US20050048329A1 (en) * 2003-08-26 2005-03-03 The University Of Chicago Layered structure of Cu-containing superconductor and Ag or Ag alloys with Cu
DE10342965A1 (en) * 2003-09-10 2005-06-02 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Nickel-based semifinished product with a recrystallization cube texture and process for its production
US20050092253A1 (en) * 2003-11-04 2005-05-05 Venkat Selvamanickam Tape-manufacturing system having extended operational capabilites
US7510819B2 (en) * 2003-11-10 2009-03-31 Board Of Regents, University Of Houston Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers
JP2005166781A (en) * 2003-12-01 2005-06-23 Seiko Epson Corp Piezoelectric device, liquid discharge head, their manufacturing methods, and thin film forming device
US7146034B2 (en) * 2003-12-09 2006-12-05 Superpower, Inc. Tape manufacturing system
CN100365839C (en) * 2003-12-15 2008-01-30 北京有色金属研究总院 Multilayer biaxial orienting insulation layer structure and high-temperature superconductive coating conductor and preparing method thereof
US6872988B1 (en) 2004-03-23 2005-03-29 Ut-Battelle, Llc Semiconductor films on flexible iridium substrates
US7432229B2 (en) * 2004-03-23 2008-10-07 Ut-Battelle, Llc Superconductors on iridium substrates and buffer layers
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7387811B2 (en) * 2004-09-21 2008-06-17 Superpower, Inc. Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD)
US7569521B2 (en) * 2004-12-01 2009-08-04 University Of Florida Research Foundation, Inc. Method of producing biaxially textured substrates and related articles, devices and systems
US7619272B2 (en) * 2004-12-07 2009-11-17 Lsi Corporation Bi-axial texturing of high-K dielectric films to reduce leakage currents
KR100624665B1 (en) * 2005-01-20 2006-09-19 한국기계연구원 Low magnetic loss metal tape with biaxial texture and method of manufacturing
DE102005013368B3 (en) * 2005-03-16 2006-04-13 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Making nickel-based blank with cubic recrystallization structure for use as backing for high temperature superconductor, employs silver micro-alloying and specified thermal and mechanical treatments
CN100368597C (en) * 2005-04-22 2008-02-13 中国科学院物理研究所 Method for preparing YBCO high temperature superconducting film on non-texture metal baseband
JP2009503269A (en) * 2005-08-01 2009-01-29 ミッドウエスト リサーチ インスティチュート Electrodeposition of biaxially textured layers on substrates
US20070044832A1 (en) * 2005-08-25 2007-03-01 Fritzemeier Leslie G Photovoltaic template
KR100691061B1 (en) * 2005-08-30 2007-03-09 엘에스전선 주식회사 Substrate for superconducting wire and fabrication method thereof and superconducting wire
WO2007041532A2 (en) * 2005-10-03 2007-04-12 Massachusetts Institute Of Technology Magnet system for magnetic resonance spectroscopy comprising superconducting annuli
JP2007311194A (en) * 2006-05-18 2007-11-29 Sumitomo Electric Ind Ltd Superconducting thin film material and its manufacturing method
CN100374596C (en) * 2006-05-19 2008-03-12 北京工业大学 Ni-base alloy composite baseband and powder metallurgy method for preparing same
US20080146452A1 (en) * 2006-10-26 2008-06-19 Dae Yeong Jeong (113) [121] Textured Ag substrate and Tl-1223 high temperature superconducting coated conductor using the same
EP1916720B1 (en) * 2006-10-27 2008-12-24 Nexans Method for the production of superconducting electrical conductor
US7879763B2 (en) * 2006-11-10 2011-02-01 Superpower, Inc. Superconducting article and method of making
ES2356755T3 (en) 2006-11-17 2011-04-12 Nexans PROCEDURE FOR THE MANUFACTURE OF A SUPERCONDUCTIVE ELECTRIC DRIVER.
KR100807640B1 (en) * 2006-12-22 2008-02-28 한국기계연구원 Synthesizing precursor solution enabling fabricating biaxially textured buffer layers by low temperature annealing
US8741158B2 (en) 2010-10-08 2014-06-03 Ut-Battelle, Llc Superhydrophobic transparent glass (STG) thin film articles
DE102007024166B4 (en) * 2007-05-24 2011-01-05 Zenergy Power Gmbh A method of processing a metal substrate and using it for a high temperature superconductor
JP2008303082A (en) * 2007-06-05 2008-12-18 Kagoshima Univ Interlayer of orientational substrate for forming epitaxial film and orientational substrate for forming epitaxial film
US7879161B2 (en) * 2007-08-08 2011-02-01 Ut-Battelle, Llc Strong, non-magnetic, cube textured alloy substrates
JP5324763B2 (en) * 2007-08-21 2013-10-23 中部電力株式会社 Alignment substrate for epitaxial film formation and surface modification method for alignment substrate for epitaxial film formation
US8227082B2 (en) * 2007-09-26 2012-07-24 Ut-Battelle, Llc Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom
CA2749804A1 (en) * 2008-03-06 2009-09-11 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
US20100015340A1 (en) * 2008-07-17 2010-01-21 Zenergy Power Inc. COMPOSITIONS AND METHODS FOR THE MANUFACTURE OF RARE EARTH METAL-Ba2Cu3O7-delta THIN FILMS
US7919435B2 (en) 2008-09-30 2011-04-05 Ut-Battelle, Llc Superconductor films with improved flux pinning and reduced AC losses
JP5382911B2 (en) 2008-11-12 2014-01-08 東洋鋼鈑株式会社 Method for producing metal laminated substrate for oxide superconducting wire and oxide superconducting wire using the substrate
WO2010055613A1 (en) 2008-11-12 2010-05-20 東洋鋼鈑株式会社 Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor
JP5448425B2 (en) * 2008-11-21 2014-03-19 公益財団法人国際超電導産業技術研究センター Superconducting film deposition substrate, superconducting wire, and method for producing them
US8664163B2 (en) * 2009-01-15 2014-03-04 Ramot At Tel-Aviv University Ltd. High temperature superconductive films and methods of making them
US9349935B2 (en) * 2009-01-15 2016-05-24 Technology Innovation Momentum Fund (Israel) Limited Partnership High temperature superconductive films and methods of making them
WO2010088366A1 (en) * 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US20100270653A1 (en) * 2009-04-24 2010-10-28 Christopher Leitz Crystalline thin-film photovoltaic structures and methods for forming the same
US20110034336A1 (en) * 2009-08-04 2011-02-10 Amit Goyal CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS
US20110034338A1 (en) * 2009-08-04 2011-02-10 Amit Goyal CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS
WO2011052552A1 (en) * 2009-10-27 2011-05-05 古河電気工業株式会社 Tape base material for a superconducting wire rod, and superconducting wire rod
EP2337102B1 (en) 2009-12-15 2013-05-22 Nexans Superconducting conductor and method for producing a superconducting electric conductor
US8486864B2 (en) * 2009-12-29 2013-07-16 Ut-Battelle, Llc Method for producing microstructured templates and their use in providing pinning enhancements in superconducting films deposited thereon
US8221909B2 (en) * 2009-12-29 2012-07-17 Ut-Battelle, Llc Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same
CN102804434A (en) * 2010-03-26 2012-11-28 俄亥俄大学 Engineering of an ultra-thin molecular superconductor by charge transfer
KR100998851B1 (en) 2010-05-27 2010-12-08 한국기계연구원 An method of forming buffer layers for superconducting tape
DE102010031058A1 (en) 2010-07-07 2012-01-12 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Metallic profile wire with recrystallization cube texture and process for its production
US8685549B2 (en) 2010-08-04 2014-04-01 Ut-Battelle, Llc Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same
EP2442376A1 (en) 2010-10-05 2012-04-18 Nexans Superconducting cable and method for producing a superconducting electric cable
US11292919B2 (en) 2010-10-08 2022-04-05 Ut-Battelle, Llc Anti-fingerprint coatings
US9221076B2 (en) 2010-11-02 2015-12-29 Ut-Battelle, Llc Composition for forming an optically transparent, superhydrophobic coating
JP5819977B2 (en) 2010-11-22 2015-11-24 エレクトロマグネティクス コーポレーション Device for tailoring substances
US8993092B2 (en) 2011-02-18 2015-03-31 Ut-Battelle, Llc Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same
US8748350B2 (en) * 2011-04-15 2014-06-10 Ut-Battelle Chemical solution seed layer for rabits tapes
US8748349B2 (en) 2011-04-15 2014-06-10 Ut-Battelle, Llc Buffer layers for REBCO films for use in superconducting devices
RU2451766C1 (en) * 2011-05-16 2012-05-27 Учреждение Российской академии наук Ордена Трудового Красного Знамени Институт физики металлов Уральского отделения РАН (ИФМ УрО РАН) Method for biaxial textured substrate production from binary alloy on basis of nickel for epitaxial application of buffer and high-temperature superconductive layers for ribbon superconductors to substrate
CN103547533A (en) * 2011-05-23 2014-01-29 古河电气工业株式会社 Oxide superconducting thin film
RU2481674C1 (en) * 2011-10-27 2013-05-10 Закрытое акционерное общество "СуперОкс" Method to manufacture substrate for high-temperature thin-film superconductors and substrate
JP5531065B2 (en) * 2012-08-16 2014-06-25 中部電力株式会社 Alignment substrate for epitaxial film formation
USD747228S1 (en) * 2013-11-04 2016-01-12 Fibar Group S.A. Door/window sensor
US10158061B2 (en) * 2013-11-12 2018-12-18 Varian Semiconductor Equipment Associates, Inc Integrated superconductor device and method of fabrication
US9947441B2 (en) 2013-11-12 2018-04-17 Varian Semiconductor Equipment Associates, Inc. Integrated superconductor device and method of fabrication
USD737709S1 (en) * 2014-01-16 2015-09-01 Greg Hulan Personal alert device
US20150239773A1 (en) 2014-02-21 2015-08-27 Ut-Battelle, Llc Transparent omniphobic thin film articles
DK3265430T3 (en) 2015-03-02 2019-08-26 Basf Se APPLICATION OF CRYSTALLINIC TANTALOXIDE PARTICLES AS SUPER-LEADER PINING CENTER
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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA697916A (en) * 1964-11-17 R. Pflumm Heinz Alloying
US3770497A (en) * 1970-03-26 1973-11-06 Siemens Ag Method of producing a two layer contact piece
JPH01100818A (en) * 1987-10-14 1989-04-19 Fujikura Ltd High temperature superconducting material
JPH01100820A (en) * 1987-10-14 1989-04-19 Fujikura Ltd High temperature superconducting material
US5212148A (en) * 1988-05-11 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing oxide superconducting films by laser evaporation
US5248662A (en) * 1991-01-31 1993-09-28 Sumitomo Electric Industries Laser ablation method of preparing oxide superconducting films on elongated substrates
US5290761A (en) * 1992-10-19 1994-03-01 E. I. Du Pont De Nemours And Company Process for making oxide superconducting films by pulsed excimer laser ablation
US5312804A (en) * 1991-10-29 1994-05-17 Alcatel Cable Method of fabricating a superconductive flexible ceramic conductor having a high critical temperature
JPH06139848A (en) * 1992-10-27 1994-05-20 Sumitomo Electric Ind Ltd Manufacture of oxide high-temperature superconducting wire rod
US5330966A (en) * 1990-03-08 1994-07-19 Sumitomo Electric Industries, Inc. Method of preparing 2223 phase (Bi,Pb)-Sr-Ca-Cu-O superconducting films
US5372089A (en) * 1992-07-30 1994-12-13 Sumitomo Electric Industries, Ltd. Method of forming single-crystalline thin film

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661112A (en) * 1987-07-24 1997-08-26 Hatta; Shinichiro Superconductor
US5104456A (en) * 1990-02-15 1992-04-14 Colorado School Of Mines Process for optimizing titanium and zirconium additions to aluminum welding consumables
US5145832A (en) * 1991-05-22 1992-09-08 Bell Communications Research, Inc. Superconducting film on a flexible two-layer zirconia substrate
US5340797A (en) * 1993-01-29 1994-08-23 Illinois Superconductor Corporation Superconducting 123YBaCu-oxide produced at low temperatures
US5432151A (en) * 1993-07-12 1995-07-11 Regents Of The University Of California Process for ion-assisted laser deposition of biaxially textured layer on substrate
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA697916A (en) * 1964-11-17 R. Pflumm Heinz Alloying
US3770497A (en) * 1970-03-26 1973-11-06 Siemens Ag Method of producing a two layer contact piece
JPH01100818A (en) * 1987-10-14 1989-04-19 Fujikura Ltd High temperature superconducting material
JPH01100820A (en) * 1987-10-14 1989-04-19 Fujikura Ltd High temperature superconducting material
US5212148A (en) * 1988-05-11 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing oxide superconducting films by laser evaporation
US5330966A (en) * 1990-03-08 1994-07-19 Sumitomo Electric Industries, Inc. Method of preparing 2223 phase (Bi,Pb)-Sr-Ca-Cu-O superconducting films
US5248662A (en) * 1991-01-31 1993-09-28 Sumitomo Electric Industries Laser ablation method of preparing oxide superconducting films on elongated substrates
US5312804A (en) * 1991-10-29 1994-05-17 Alcatel Cable Method of fabricating a superconductive flexible ceramic conductor having a high critical temperature
US5372089A (en) * 1992-07-30 1994-12-13 Sumitomo Electric Industries, Ltd. Method of forming single-crystalline thin film
US5290761A (en) * 1992-10-19 1994-03-01 E. I. Du Pont De Nemours And Company Process for making oxide superconducting films by pulsed excimer laser ablation
JPH06139848A (en) * 1992-10-27 1994-05-20 Sumitomo Electric Ind Ltd Manufacture of oxide high-temperature superconducting wire rod

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPL. PHYS. LETT., Vol. 62, No. 15, 12 April 1993, BUDAI et al., "In-Plane Epitaxial Alignment of YBa2Cu307-x Films Grown on Silver Crystals and Buffer Layers", pp. 1836-1838. *
PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM OF SUPERCONDUCTIVITY, FUKUOKA, JAPAN, 8-11 November 1994, DOI et al., "A New Type of Superconducting Wire; Biaxially Oriented T11(Ba0.8Sr0.2)2 Ca2Cu309 on {100}<100> Textured Silver Tape". *

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968877A (en) * 1995-04-10 1999-10-19 Lockheed Martin Energy Research Corp High Tc YBCO superconductor deposited on biaxially textured Ni substrate
US6172009B1 (en) 1997-06-18 2001-01-09 Massachusetts Institute Of Technology Controlled conversion of metal oxyfluorides into superconducting oxides
US6610428B2 (en) 1997-06-18 2003-08-26 Massachusetts Institute Of Technology Controlled conversion of metal oxyfluorides into superconducting oxides
US6486100B1 (en) * 1997-09-16 2002-11-26 Ut-Battelle, Llc Method for preparing preferentially oriented, high temperature superconductors using solution reagents
US6256521B1 (en) 1997-09-16 2001-07-03 Ut-Battelle, Llc Preferentially oriented, High temperature superconductors by seeding and a method for their preparation
DE19740964A1 (en) * 1997-09-17 1999-03-18 Access Ev Substrate especially for supporting a superconductive functional layer
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6426320B1 (en) 1997-09-23 2002-07-30 American Superconductors Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
AU744450B2 (en) * 1997-10-01 2002-02-21 American Superconductor Corporation Substrates for superconductors
WO1999016941A1 (en) * 1997-10-01 1999-04-08 American Superconductor Corporation Substrates for superconductors
GB2336849B (en) * 1998-04-27 2003-02-26 Telcon Ltd Substrate materials
EP0977283A3 (en) * 1998-04-27 2002-03-20 Carpenter Technology (UK) Ltd. Substrate materials for oxide superconductors
US6251834B1 (en) 1998-04-27 2001-06-26 Carpenter Technology (Uk) Limited Substrate materials
EP0977283A2 (en) * 1998-04-27 2000-02-02 Carpenter Technology (UK) Ltd. Substrate materials for oxide superconductors
GB2336849A (en) * 1998-04-27 1999-11-03 Telcon Ltd A nickel alloy substrate layer for oxide superconductors
US6375768B1 (en) * 1998-07-09 2002-04-23 Ut-Battelle, Llc Method for making biaxially textured articles by plastic deformation
US6180570B1 (en) * 1998-07-09 2001-01-30 Ut-Battelle, Llc Biaxially textured articles formed by plastic deformation
JP2011044705A (en) * 1999-01-12 2011-03-03 Ngimat Co Epitaxial thin film
US8865627B2 (en) 2008-11-28 2014-10-21 Sumitomo Electric Industries, Ltd. Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire
US9570215B2 (en) 2008-11-28 2017-02-14 Sumitomo Electric Industries, Ltd. Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire

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US5741377A (en) 1998-04-21
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EP0830218A4 (en) 2000-05-10

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