WO1996032201A1 - Structures having enhanced biaxial texture and method of fabricating same - Google Patents
Structures having enhanced biaxial texture and method of fabricating same Download PDFInfo
- Publication number
- WO1996032201A1 WO1996032201A1 PCT/US1996/004934 US9604934W WO9632201A1 WO 1996032201 A1 WO1996032201 A1 WO 1996032201A1 US 9604934 W US9604934 W US 9604934W WO 9632201 A1 WO9632201 A1 WO 9632201A1
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- WIPO (PCT)
- Prior art keywords
- article
- biaxially textured
- accordance
- substrate
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000002887 superconductor Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 67
- 238000005096 rolling process Methods 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 40
- 238000000137 annealing Methods 0.000 claims description 37
- 229910045601 alloy Inorganic materials 0.000 claims description 33
- 239000000956 alloy Substances 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 9
- 238000005275 alloying Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 30
- 239000010408 film Substances 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000009467 reduction Effects 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 238000001953 recrystallisation Methods 0.000 description 12
- 238000011161 development Methods 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 229910001369 Brass Inorganic materials 0.000 description 9
- 239000010951 brass Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 5
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- 238000005461 lubrication Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910002480 Cu-O Inorganic materials 0.000 description 4
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- 238000009792 diffusion process Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000007735 ion beam assisted deposition Methods 0.000 description 3
- 229940059904 light mineral oil Drugs 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000005118 spray pyrolysis Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005097 cold rolling Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003350 kerosene Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910003310 Ni-Al Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 229940097789 heavy mineral oil Drugs 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000010963 scalable process Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0801—Manufacture or treatment of filaments or composite wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
- C21D8/12—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of articles with special electromagnetic properties
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D2201/00—Treatment for obtaining particular effects
- C21D2201/04—Single or very large crystals
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D2201/00—Treatment for obtaining particular effects
- C21D2201/05—Grain orientation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/93—Electric superconducting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
- Y10T428/12618—Plural oxides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to biaxially textured metallic substrates and articles made therefrom, and more particularly to such substrates and articles made by rolling a metallic substrate to obtain a biaxial texture, followed by deposition of epitaxial materials thereon, with an emphasis on superconductors.
- Re-Ba-Cu-O ReBCO, Re denotes a rare earth element
- Tl-(Pb,Bi)-Sr-(Ba)-Ca-Cu-O and Hg-(Pb)-Sr-(Ba)-Ca-Cu-O families of superconductors some of the compounds have much higher intrinsic limits and can be used at higher temperatures.
- Fig. 1 shows a comparison of optimized properties of various superconductors. It has been demonstrated that these superconductors possess high critical current densities (Jc) at high temperatures when fabricated as single crystals or in essentially single-crystal form as epitaxial films on single crystal substrates such as SrTi0 3 and LaAIO,.
- Jc critical current densities
- Y-Ba 2 -Cu 3 -O l( (YBCO) is an important superconducting material for the development of superconducting current leads, transmission lines, motor and magnetic windings, and other electrical conductor applications. When cooled below their transition temperature, superconducting materials have no electrical resistance and carry electrical current without heating up.
- One technique for fabricating a superconducting wire or tape is to deposit a YBCO film on a metallic substrate.
- Superconducting YBCO has been deposited on polycrystalline metals in which the YBCO is c-axis oriented, but not aligned in-plane.
- the YBCO films must be biaxially textured, preferably c-axis oriented, with effectively no large-angle grain boundaries, since such grain boundaries are detrimental to the current-carrying capability of the material.
- YBCO films deposited on polycrystalline metal substrates do not generally meet this criterion.
- a method of preparing a biaxially textured alloy article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate an alloying agent to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to cause interdiffusion of the metal and the alloying agent, while preventing homogeneous melting, to form a biaxially textured alloy article.
- a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and, b. depositing onto the surface of the biaxially textured substrate an epitaxial layer of material to form a biaxially textured laminate.
- a method of preparing a biaxially textured laminate article including the steps of: a. rolling a metal preform to form a biaxially textured substrate having a surface, the metal preform having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; b. depositing onto the surface of the biaxially textured substrate a layer of material to form a laminate; and, c. heating the laminate to a sufficient temperature and for a sufficient time to induce epitaxy in the material to form a biaxially textured laminate.
- a method of preparing a biaxially textured laminate article including the steps of: a.
- a substrate having a biaxially textured Ag surface b. depositing onto the surface of the substrate an epitaxial buffer template layer of ReBCO using a pulsed laser deposition technique at a temperature in the range of about 600°C to about 700°C, and at an oxygen pressure in the range of about 50 mTorr to about 300 mTorr; and, c. depositing onto the buffer template layer another epitaxial layer of perovskite-like material using a pulsed laser deposition technique.
- a biaxially textured alloy article including a rolled and annealed biaxially textured metal substrate having a surface, the metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial layer of an alloying agent on a surface thereof, the epitaxial layer being bonded to the substrate by alloying.
- a biaxially textured laminate article including a rolled and annealed biaxially textured base metal substrate, the base metal having a face- centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure, having an epitaxial layer of another material on a surface thereof.
- a superconductor article including a rolled and annealed, biaxially textured metal substrate, having an epitaxial barrier layer thereon, and an epitaxial superconductor layer on the barrier layer.
- a superconductor article including a rolled and annealed biaxially textured Ag substrate having an epitaxial superconductor layer thereon.
- Fig. 1 is a graph showing optimized magnetic irreversibility lines of various high temperature superconductors.
- Fig. 2 is an oblique schematic view of a biaxially textured substrate having various epitaxial layers deposited thereon.
- Fig. 3 is a Ag (111) X-ray pole figure of a rolled and annealed tape.
- Fig. 4 shows expected intensities for a (412) ⁇ 548 > texture on a Ag (111) pole figure.
- Fig. 5 is a Cu(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet.
- Fig. 6 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with an as-deposited layer of Ag.
- Fig. 7 is a Ag(l 11) X-ray pole figure showing the texture of a rolled and annealed Cu sheet with a layer of Ag after annealing.
- Fig. 8 is a graph showing an X-ray ⁇ scan through Ni(202) indicating in-plane alignment of the Ni substrate in a sample of Ag/Pd/Rolled Ni.
- Fig. 9 is a graph showing an X-ray ⁇ scan through Pd(202) indicating in-plane alignment of the Pd layer in a sample of Ag/Pd/Rolled Ni.
- Fig. 10 is a graph showing an X-ray ⁇ scan through Ag(202) indicating in-plane alignment of the Ag layer in a sample of Ag/Pd/Rolled Ni.
- Fig. 11 is a graph showing an X-ray ⁇ scan through YBCO(226) reflection indicating in-plane alignment of the YBCO superconductor in a sample of YBCO/CeO 2 /Ag/Pd/Ni.
- a biaxially textured substrate or sheath material is fabricated by industrially scalable rolling techniques.
- the substrate can then be coated/reacted by a variety of techniques to produce chemically compatible, textured barrier layers and/or alloys.
- An epitaxial layer of another material is then grown on the textured substrate (or on a barrier layer as the case may be) using any of a variety of techniques.
- the texture from the substrate (or the barrier layer) is then induced in the epitaxial layer. It is thereby possible to deposit a biaxially aligned superconductor with high critical current density.
- Such articles are also important from the perspective of other physical properties, e.g., mechanical properties. These articles and methods are contemplated to have applications far beyond superconductivity; for example, they can be used in the fabrication of strong, tough materials for
- SUBSTITUTE SHEET (RULE 26 mechanical, magnetic, and ferroelectric applications. It is well established that low energy boundaries — low angle and low-sigma coincident site lattice (CSL) — have superior physical properties, including enhanced mechanical toughness. Hence, a strengthened substrate is described herein, since in these biaxially textured substrates, a high proportion of grain boundaries have small misonentation angles. (The expected grain boundary misonentation distribution can be estimated based on the macroscopic texture determination.) Similar advantages are expected for other physical properties, e.g., magnetic, ferroelectric properties.
- a biaxially textured substrate 1 has an epitaxial buffer layer 2 deposited thereon, upon which is deposited a second epitaxial layer 3 which is a superconductor, ferroelectric device, or other electromagnetic or electro-optical device.
- the buffer layer 2 is not necessary, and in other cases, multiple buffer layers are preferred or necessary.
- plastic flow causes reorientation of the lattice of individual grains of a polycrystalline material and tends to develop a texture or preferred orientation of the lattice in the grains.
- the progress of reorientation is gradual; the orientation change proceeds as plastic flow continues, until a texture is reached that is stable against indefinite continued flow of a given type.
- the nature of the stable deformation texture and the manner in which it is approached is characteristic of the material and of the nature of the flow throughout the deformation process (i.e., the magnitude of the three principal strains at all points within the specimen and at successive times during the process).
- the texture development is strongly influenced by temperature, particularly if the temperature of deformation is high enough for recrystallization to take place.
- Annealing Processes The development of an annealing texture involves several fundamental mechanisms.
- An annealing texture may develop from recovery without recrystallization (in which case it would be expected to duplicate the texture present before annealing), from primary recrystallization, or from grain growth subsequent to recrystallization. Grain size distribution can remain normal throughout the process, or a few grains may grow very large while the rest remain approximately unchanged until devoured by the large ones. The latter type of grain growth, referred to as "secondary recrystallization" or “discontinuous”, is generally considered to be abnormal.
- cube texture In a cube texture, the cube plane lies parallel to the plane of the sheet and a cube edge is parallel to the rolling direction, i.e. , (100)[001j. This texture resembles a single crystal with subgrains, but may contain a minor amount of material in twin relation to the principal orientation.
- a fully developed cube texture, as described herein, has been developed with biaxial alignment with x-ray diffraction peak width of 2° full width at half maximum.
- Brass texture is (110) ⁇ 112 > . It does not appear that brass texture is obtainable as sha ⁇ as the cube texture.
- the stacking fault energy is very important. It is well known that the stacking fault energy increases with increase in temperature. One can show that at temperatures above 150°C, the stacking fault energy of Ag is almost same as that of Cu at room temperature. Hence, when rolling Ag at temperatures 150 - 500°C the development of cube texture is generally expected. Above 300°C, it is highly likely that only the cube component remains.
- Rolling temperature 50°C - 500°C, preferably 100°C - 400°C, more preferably 180°C -
- Annealing temperature 100°C - 960°C, preferably 100°C - 600°C, more preferably
- Preferable purity of Ag is at least 99.99%. As Ag purity decreases, the temperature of deformation increases. If Ag is 99.0% pure, the required deformation temperature may be over 200°C.
- a substrate of Ag is rolled under the following conditions to form a sha ⁇ cube texture thereon:
- Decreasing temperatures results in decrease in the stacking fault energy. This favors the brass component of the texture. In order to obtain a sha ⁇ texture one needs to isolate a single texture component. Decreasing the temperature of deformation increases the amount of brass component fraction. Rolling temperature should be no more than 20°C, and annealing temperature should be at least 100°C.
- a strip of Ag was rolled under the following conditions to form a sha ⁇ brass texture thereon: Rolling temperature: 160°C
- Annealing temperature should be 100°C - 900°C; preferably 100°C - 400°C; more preferably 200°C - 300°C.
- EXAMPLE III A strip of Ag was rolled under the following conditions to form a (412) ⁇ 548 > texture thereon: Rolling temperature: room temperature Rolling speed: 15 ft./min.
- Fig. 3 shows Ag (111) X-ray pole figure of a rolled and annealed tape.
- Fig. 4 shows expected intensities for a (412) ⁇ 548 > texture on a Ag (111) pole figure.
- a well developed cube texture in metals such as Cu, Ni and Fe can be achieved by heavy rolling process reductions (at least 80%) prior to final annealing.
- Al small reductions prior to final annealing are required to produce the cube texture.
- Ag and in Ag-, Cu-, Ni-, Al- and Fe-based alloys, components of cube texture can be achieved by rolling at higher temperatures (in excess of 100°C). General conditions for this process are dependent upon the stack fault energy of the metal. The higher the purity of the metal, the lower the required temperature of deformation.
- Total deformation prior to annealing should be at least 70%, preferably at least 80%. Annealing temperature should be at least
- Rolling speed 15 ft./min.
- Reduction Per Pass 10%
- Rolling direction Reverse rolling Lubrication: light mineral oil Annealing temperature 300° C Purity of Ag - at least 99.99%
- Fig. 5 shows a pole figure depicting the strong in-plane as well as out-of-plane texture in the rolled and annealed Cu sheet.
- Ag can be coated on the textured Cu sheet followed by heat treatment at high temperatures, thereby diffusing Ag into the Cu. The process can be continued until one is left with, in effect, a Ag-rich substrate with some Cu in it. Diffusion of Ag into Cu does not change the bulk cube texture of the sheet. Varying amounts of Ag can be diffused into the Cu. Alternatively one can saturate the Cu with Ag. Subsequent deposition of Ag will now result in a top layer which is primarily Ag. In this way cube- textured Ag can be formed.
- a thick layer Ag( lOO ⁇ m) was electroplated using a standard electroplating technique on to a cube textured Cu substrate made according to the method described herein.
- the composite structure was then annealed at 800 °C in vacuum.
- the resulting material was a Ag-Cu alloy with all the electroplated Ag having diffused into the Cu. Both the lattice parameter as well the color of the copper strip was changed on annealing.
- the instant method can be extended to many alloys, for example, alloys commonly known as nichrome (a Ni-Cr alloy), and inconel (a Cu-Ni alloy).
- nichrome a Ni-Cr alloy
- inconel a Cu-Ni alloy.
- Oxidation resistant layers on the surface of the biaxially textured Ni are formed by diffusing appropriate amounts of Cr, Mo, Al and Fe.
- a layer of Cr was electroplated on a cube textured Ni substrate made according to the method described herein by a standard commercial electroplating technique.
- Tuning of the lattice parameters of oriented substrates produced by rolling can also be done. For example, depositing a thin layer of Pd or Pt, etc., and subsequent diffusion of this layer into the textured
- Ni will result in the local alteration of the lattice parameter, which may be important for achieving better epitaxy of the barrier layer or the device layer.
- T e instant method can be extended to Al- and Fe-based alloys to obtain chemically compatible, cube textured substrates.
- Ni-Al alloy is rolled according to the method described herein, using small final reductions prior to annealing to obtain a sha ⁇ cube texture.
- Ni is deposited on the surface by a conventional electroplating method.
- the composite structure is then heated at temperatures greater than 100°C in vacuum.
- the resulting structure is a textured Ni-Al alloy.
- Formation of brass texture in the substrate in Cu-, Ni-, Fe-, Al- and Ag- based alloys can be achieved by cold rolling by heavy reductions (at least 70%, preferably at least 80%) at room temperature followed by recrystallization annealing. In some cases, deformation temperatures as low as -230°C may be required to produce a sharp texture. Annealing temperature should generally be at least 100°C.
- the alloys have excellent oxidation resistance, and if this is the case, highly textured substrates can be directly used as templates for a superconductor phase.
- a chemically and structurally compatible barrier layer which can be grown epitaxially on the textured substrate (for example, a native oxide) can be used.
- Brass texture in 70% Cu - 30% Zn is attained by rolling at room temperature using the following conditions:
- a desirable primary recrystallization texture is that consisting of small grains. This is obtained by having a suitable distribution of second phase materials such as manganese, sulfur, silica or vanadium nitride as grain growth inhibitors.
- the desired texture in this case is produced by secondary recrystallization, with the (110)[001] grains growing to a size 10 to 100 times the sheet thickness during annealing in suitable atmospheres and temperatures.
- a Biaxially Textured Layer Various layers comprised of different metals such as Cu, Ni, Al, Fe, etc., and ceramics can be deposited on the textured metal substrate.
- the texture of the substrate can be induced into the layer during deposition or during subsequent annealing.
- a fully cube textured Cu sample was made according to the method described above.
- the sample was placed in a laboratory-scale evaporator in a vacuum of about 10 " * torr. Ag was deposited on the sample at room temperature by evaporation, followed by annealing at 200° C in vacuum to produce a cube textured Ag layer. Results are shown in Figs. 6 and 7.
- SUBSTITUTE SHEET (RULE 261 Fig. 6 shows a pole figure of an as-deposited Ag layer on the Cu sheet. It is found to have a very sha ⁇ (111) texture. Fig. 7 shows the pole figure of the same sheet after annealing. It is found that the strong cube texture in the Cu is imparted on the Ag layer. This textured Ag can be used as a barrier layer, and a superconductor phase or other device layer can be grown on it. If the oxide layer on the Cu is removed prior to deposition of Ag, as-deposited Ag is cube textured.
- a thin layer of another face-centered cubic material such as Pd, Pt, Cr, and/or Cu may be necessary before Ag is deposited.
- a biaxial textured laminate article was formed according to the invention by deposition of a Pd layer upon a textured Ni substrate, followed by deposition of an Ag layer upon the Pd layer.
- the deposition process used dual-source dc magnetron sputtering, and the deposition conditions were as follows:
- Substrate temperatures 500°C for Pd deposition, 300°C for Ag deposition
- Layer thicknesses 200 nm for Pd, 35 ⁇ m for Ag.
- Figs. 8 - 10 show (202) phi scans of a rolled, cube-textured Ni strip, with a thin layer of Pd, and then a layer of Ag on the Pd.
- the texture of the substrate can clearly be seen to be imparted on the layer.
- a biaxially-textured alloy coating can also be formed by depositing at least two films of dissimilar metals on the surface of the biaxially-textured substrate, and subsequently annealing the coated substrate to a temperature sufficiently high to allow interdiffusion of the layers. If the layers are not epitaxial as- deposited, then epitaxial growth will occur during the annealing process.
- a layer of 300 nm thick Pd was sputter-deposited at 500°C.
- a layer of 1000 nm thick Ag is then sputter-deposited at 300°C.
- This Ag/Pd/Ni epitaxial laminate structure was then annealed at 700°C in vacuum.
- the resulting article consisted of a biaxially-textured Ag-Pd alloy coating on the biaxially- textured Ni.
- a laminate article with a biaxially-textured ceramic layer is formed according to the invention by growing an epitaxial layer, such as yttria-stabilized zirconia (YSZ), MgO, TiN, ZrO 2 , CeO 2 , SrTiO 3 , or
- Epitaxial ceramic layers can be grown using one of a variety of techniques including pulsed-laser deposition, sputtering, vapor deposition, chemical vapor deposition, sol-gel, spray pyrolysis, spin coating, and electrodeposition.
- a ferroelectric, electro-optic, superconducting, or other electromagnetic layer can then be epitaxially grown onto this biaxially-textured ceramic layer using one of the film growth techniques listed above.
- the final laminate article consists of a biaxially-textured ferroelectric, electro-optic, or superconducting film on a ceramic layer on a metal substrate.
- the rolling processes for fabricating the textured metal substrate described earlier enables the fabrication of long-length ferroelectric, electro-optic, superconducting, or other electromagnetic biaxially-textured laminate articles.
- the final deposited layer is a superconductor
- the resulting article is a superconducting tape with few or no weak-link high-angle grain boundaries.
- the ability to fabricate this article is a significant step in the development of superconducting high-current conductors for use at temperatures greater than 77 K in high magnetic fields.
- a biaxially textured laminate made according to Example X was introduced into a pulsed-laser deposition chamber. After sputter cleaning the Ag surface with an Ar ion gun, the laminate article was heated to 750°C. A 500 nm thick CeO 2 layer was then deposited by pulsed-laser deposition with an oxygen background pressure of 4x10"* Torr. A 1000 nm thick YBCO film was then deposited at 750°C in 200 mTorr oxygen. The resulting laminate, biaxially-textured YBCO/CeO 2 /Ag/Pd/Ni multilayer structure, was cooled in 1 atm oxygen. Results are shown in Fig. 11.
- Figure 11 shows the x-ray phi scan of the 226 reflection of the YBCO layer, indicating that the YBCO was c-axis oriented, biaxially-textured. Formation of C-Axis Oriented. Biaxinllv-Textiired Pernvskite-Like Films on Biaxia lv-Textured Ag
- a two-step film growth process involving a non-superconducting ReBCO buffer template layer has been developed which enables the growth of c-axis oriented, biaxially-textured perovskite-like films on single crystal or biaxially-textured Ag.
- the substrate surface should be (110) or (100) biaxially-textured Ag.
- the substrate is heated to 600°C - 700°C, preferably 625°C - 675°C.
- Pulsed-laser deposition is then utilized to grow a ReBCO layer in an oxygen pressure of 50-300 mTorr, preferably 150-250 mTorr, onto the Ag surface.
- This film does not have good superconducting properties, it is continuous with the c-axis perpendicular to the substrate surface, and aligned in-plane with respect to the crystal axes of the Ag.
- This ReBCO layer serves as a template for the growth of subsequent epitaxial perovskite-like layers. Note that the function of this ReBCO buffer template is to induce crystallographic alignment in subsequent layers rather than act as a superconductor. C-axis oriented, biaxially-textured films of selected perovskite-like materials, such as YBCO or SrTiO 3 , can then be grown on this buffer template layer at a growth temperature which optimizes the desired properties of the perovskite-like film.
- ReBCO films which are c-axis oriented, biaxially-textured, and superconducting with a superconducting transition temperature of 80K - 90K (-193°C to -183°C) are obtained on Ag using the above procedure by growing an additional ReBCO layer on the nonsuperconducting ReBCO template buffer layer at 730°C - 800°C in 50-300 mTorr oxygen using pulsed-laser deposition.
- growth of ReBCO directly on Ag at 730 °C - 800 °C results in a film with a superconducting transition temperature less than 80K.
- the growth temperature necessary for obtaining the c-axis oriented ReBCO buffer template layer on Ag is not obvious as similar growth conditions produce a-axis oriented ReBCO on SrTiO 3 and similar substrates.
- the use of the nonsuperconducting ReBCO template buffer layer to achieve subsequent c-axis oriented, biaxially-textured perovskite-like layers on a Ag surface is a key element of this embodiment of the invention.
- ReBCO buffer template enables the growth of c-axis oriented, biaxially textured (epitaxial) SrTi0 3 films on biaxially-textured Ag or other metals with a biaxially-textured Ag film.
- Direct growth of SrTiO, on Ag without the use of the buffer template results in (110) and (111) oriented films.
- SrTi0 3 is an excellent buffer layer for high-temperature superconducting materials.
- the ReBCO buffer template layer provides a means to form c-axis oriented, biaxially-textured metal/perovskite-like heterostructures on biaxially-textured Ag.
- the perovskite-like film is grown on the ReBCO template using one of several film growth techniques such as sputtering, evaporation, spray pyrolysis, spin-coating, or chemical vapor deposition.
- film growth techniques such as sputtering, evaporation, spray pyrolysis, spin-coating, or chemical vapor deposition.
- Other possible uses of this invention include the growth of single crystal, biaxially textured (epitaxial) perovskite-like electro-optic or ferroelectric materials on biaxially-textured Ag important in the development of epitaxial metal/perovskite-like/metal multilayer devices.
- a single crystal (100) oriented Ag foil produced by depositing Ag on (100) NaCl and dissolving the NaCl in water, was heated to 650°C in a vacuum chamber.
- a 300 nm thick, c-axis oriented, biaxially-textured YBCO template layer was then deposited at 650°C in 200 mTorr oxygen.
- the substrate was then heated to 780°C.
- a second 1000 nm thick YBCO layer was then deposited onto the YBCO template buffer layer at 780°C in 200 mTorr.
- the laminate article was then cooled in 1 at oxygen.
- the resulting YBCO film was predominantly c-axis oriented, biaxially-textured with a superconducting transition temperature of approximately 85K (-188°C).
- barrier layers of ceramics such as YSZ, MgO, TIN, Zr0 2 , CeO 2 , and SrT10 3 , are deposited by techniques such as vapor deposition, sol-gel, electrodeposition, etc., followed by annealing to form epitaxial, biaxially textured layers on the textured substrate (metal/alloy). The superconductor is then deposited on the textured template.
- the superconductor may be deposited by a variety of techniques (vapor deposition, laser ablation, sputtering, sol-gel, dip coating, electrodeposition, electrophoretic deposition, spray pyrolysis, doctor blade techniques, etc.).
- the as-deposited superconductor layer may be textured, but in other cases an additional oxygen anneal at appropriate oxygen partial pressures will be required to induce the texture from the substrate into the superconductor.
- the method also applies to precursor deposits to which one or more cations must be added from the vapor during reaction to form the superconducting phase.
- Figure 11 shows phi scans of the 226 reflection of YBCO on Ce0 2 on Ag on Pd on Ni.
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DE69636162T DE69636162T2 (en) | 1995-04-10 | 1996-04-10 | STRUCTURE WITH BIACHSIAL TEXTURE AND METHOD FOR THE PRODUCTION THEREOF |
JP53114096A JP3601830B2 (en) | 1995-04-10 | 1996-04-10 | Structure having an effective biaxially oriented structure and method for producing the structure |
CA002217822A CA2217822C (en) | 1995-04-10 | 1996-04-10 | Structures having enhanced biaxial texture and method of fabricating same |
AU55398/96A AU713892B2 (en) | 1995-04-10 | 1996-04-10 | Structures having enhanced biaxial texture and method of fabricating same |
EP96912663A EP0830218B1 (en) | 1995-04-10 | 1996-04-10 | Structures having enhanced biaxial texture and method of fabricating same |
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US6440211B1 (en) * | 1997-09-02 | 2002-08-27 | Ut-Battelle, Llc | Method of depositing buffer layers on biaxially textured metal substrates |
US6270908B1 (en) | 1997-09-02 | 2001-08-07 | Ut-Battelle, Llc | Rare earth zirconium oxide buffer layers on metal substrates |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
US6458223B1 (en) | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
EP1019920A4 (en) * | 1997-10-01 | 2001-02-28 | American Superconductor Corp | Substrates with improved oxidation resistance |
US6261704B1 (en) | 1998-06-12 | 2001-07-17 | Ut-Battelle, Llc | MgO buffer layers on rolled nickel or copper as superconductor substrates |
US6159610A (en) * | 1998-06-12 | 2000-12-12 | Ut-Battelle, Llc | Buffer layers on metal surfaces having biaxial texture as superconductor substrates |
US6150034A (en) * | 1998-06-12 | 2000-11-21 | Ut-Battelle, Llc | Buffer layers on rolled nickel or copper as superconductor substrates |
IT1302855B1 (en) * | 1998-06-15 | 2000-10-10 | Enea Ente Nuove Tec | NON-MAGNETIC METAL SUBSTRATE FOR HIGH TEMPERATURE SUPERCONDUCTORS AND RELATED PRODUCTION PROCESS. |
US6296701B1 (en) | 1998-09-30 | 2001-10-02 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom |
US6114287A (en) * | 1998-09-30 | 2000-09-05 | Ut-Battelle, Llc | Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom |
KR100276003B1 (en) * | 1998-09-30 | 2000-12-15 | 윤덕용 | Apparatus for forming thin film on a tape-type substrate and method for forming the same |
DE19859452C1 (en) * | 1998-12-22 | 2000-02-10 | Siemens Ag | Stripform high critical temperature (Tc) superconductor manufacturing method |
US7033637B1 (en) * | 1999-01-12 | 2006-04-25 | Microcoating Technologies, Inc. | Epitaxial thin films |
DE29923162U1 (en) | 1999-02-01 | 2000-04-27 | Siemens AG, 80333 München | Elongated superconductor structure with high-T¶c¶ · superconductor material and metallic carrier |
JP3521182B2 (en) * | 1999-02-26 | 2004-04-19 | 株式会社東芝 | Oxide superconducting wire and superconducting device |
US6475311B1 (en) | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
CN1117879C (en) * | 1999-04-03 | 2003-08-13 | 德累斯顿固体材料研究所 | Nickel-based metallic material and method for producing same |
CN1076126C (en) * | 1999-05-21 | 2001-12-12 | 北京工业大学 | Polycrystal silver based belt and preparation and use thereof |
US6312819B1 (en) * | 1999-05-26 | 2001-11-06 | The Regents Of The University Of California | Oriented conductive oxide electrodes on SiO2/Si and glass |
US6436317B1 (en) | 1999-05-28 | 2002-08-20 | American Superconductor Corporation | Oxide bronze compositions and textured articles manufactured in accordance therewith |
US6765151B2 (en) * | 1999-07-23 | 2004-07-20 | American Superconductor Corporation | Enhanced high temperature coated superconductors |
AU1750901A (en) | 1999-07-23 | 2001-03-05 | American Superconductor Corporation | Dust cover/pellicle for a photomask |
US6828507B1 (en) | 1999-07-23 | 2004-12-07 | American Superconductor Corporation | Enhanced high temperature coated superconductors joined at a cap layer |
US6562761B1 (en) | 2000-02-09 | 2003-05-13 | American Superconductor Corporation | Coated conductor thick film precursor |
AU6219200A (en) * | 1999-08-24 | 2001-03-19 | Electric Power Research Institute, Inc. | Surface control alloy substrates and methods of manufacture therefor |
US6921497B2 (en) * | 1999-10-13 | 2005-07-26 | Electromagnetics Corporation | Composition of matter tailoring: system I |
US6974501B1 (en) | 1999-11-18 | 2005-12-13 | American Superconductor Corporation | Multi-layer articles and methods of making same |
DE60045370D1 (en) * | 1999-11-29 | 2011-01-27 | Fujikura Ltd | POLYCRYSTALLINE THIN FILM AND METHOD FOR THE PRODUCTION THEREOF, AND SUPRALOUS OXIDE AND METHOD FOR THE PRODUCTION THEREOF |
KR100352976B1 (en) * | 1999-12-24 | 2002-09-18 | 한국기계연구원 | Electrical Plating Process and Device for Ni Plate Layer Having Biaxial Texture |
EP1122799A1 (en) * | 2000-02-01 | 2001-08-08 | Zentrum für Funktionswerkstoffe, Gemeinnützige Gesellschaft mbH | Stainless steel substrate for superconducting films |
JP3489525B2 (en) * | 2000-02-22 | 2004-01-19 | 住友電気工業株式会社 | Superconducting wire and method of manufacturing the same |
US6531945B1 (en) * | 2000-03-10 | 2003-03-11 | Micron Technology, Inc. | Integrated circuit inductor with a magnetic core |
US7381492B2 (en) * | 2000-03-24 | 2008-06-03 | University Of Houston | Thin film solid oxide fuel cell and method for forming |
GB0010494D0 (en) * | 2000-04-28 | 2000-06-14 | Isis Innovation | Textured metal article |
US6455166B1 (en) | 2000-05-11 | 2002-09-24 | The University Of Chicago | Metallic substrates for high temperature superconductors |
US6447714B1 (en) * | 2000-05-15 | 2002-09-10 | Ut-Battelle, Llc | Method for forming biaxially textured articles by powder metallurgy |
US6331199B1 (en) | 2000-05-15 | 2001-12-18 | Ut-Battelle, Llc | Biaxially textured articles formed by powder metallurgy |
US6624122B1 (en) * | 2000-06-21 | 2003-09-23 | The Regents Of The University Of California | High critical current superconducting tapes |
US6784139B1 (en) | 2000-07-10 | 2004-08-31 | Applied Thin Films, Inc. | Conductive and robust nitride buffer layers on biaxially textured substrates |
US6673387B1 (en) | 2000-07-14 | 2004-01-06 | American Superconductor Corporation | Control of oxide layer reaction rates |
US6410487B1 (en) | 2000-07-20 | 2002-06-25 | The University Of Chicago | Large area bulk superconductors |
US6361598B1 (en) | 2000-07-20 | 2002-03-26 | The University Of Chicago | Method for preparing high temperature superconductor |
KR100422333B1 (en) * | 2000-07-31 | 2004-03-10 | 이노스텍 (주) | Method for manufacturing a metal film having giant single crystals and the metal film |
US6517944B1 (en) | 2000-08-03 | 2003-02-11 | Teracomm Research Inc. | Multi-layer passivation barrier for a superconducting element |
US6985761B2 (en) * | 2000-08-14 | 2006-01-10 | Pirelli S.P.A. | Superconducting cable |
JP2002075091A (en) * | 2000-08-29 | 2002-03-15 | Sumitomo Electric Ind Ltd | Method for manufacturing oxide superconducting wire |
US6730851B2 (en) | 2000-10-06 | 2004-05-04 | Pirelli Cavi E Sistemi S.P.A. | Superconducting cable and current transmission and/or distribution network including the superconducting cable |
EP1195819A1 (en) * | 2000-10-09 | 2002-04-10 | Nexans | Buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor and process of manufacturing said structure |
US6645639B1 (en) * | 2000-10-13 | 2003-11-11 | Applied Thin Films, Inc. | Epitaxial oxide films via nitride conversion |
US6573209B1 (en) | 2000-10-13 | 2003-06-03 | Applied Thin Films, Inc. | Zirconium nitride and yttrium nitride solid solution composition |
US20020056401A1 (en) * | 2000-10-23 | 2002-05-16 | Rupich Martin W. | Precursor solutions and methods of using same |
US7041204B1 (en) * | 2000-10-27 | 2006-05-09 | Honeywell International Inc. | Physical vapor deposition components and methods of formation |
JP4713012B2 (en) * | 2000-10-31 | 2011-06-29 | 財団法人国際超電導産業技術研究センター | Tape-shaped oxide superconductor |
DE10061399C1 (en) * | 2000-12-07 | 2002-06-27 | Dresden Ev Inst Festkoerper | Single layer or multiple layer metal strip used for epitaxial coating with a biaxially textured layer made from high temperature superconducting material consists of a base material made from nickel, copper, silver or their alloys |
US7009104B2 (en) * | 2000-12-27 | 2006-03-07 | Pirelli Cavi E Sistemi S.P.A. | Superconducting cable |
ES2170727B1 (en) * | 2001-01-25 | 2003-06-16 | Farga Lacambra S A | SUBSTRATES FOR SUPERCONDUCTORS AND PROCEDURE FOR MANUFACTURING. |
GB2374557A (en) * | 2001-04-19 | 2002-10-23 | Imperial College | Producing superconductors by epitaxial growth |
US6500568B1 (en) | 2001-06-06 | 2002-12-31 | 3M Innovative Properties Company | Biaxially textured metal substrate with palladium layer |
US6617283B2 (en) * | 2001-06-22 | 2003-09-09 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom |
EP1271666A3 (en) * | 2001-06-22 | 2006-01-25 | Fujikura Ltd. | Oxide superconductor layer and its production method |
US6579360B2 (en) * | 2001-07-13 | 2003-06-17 | The University Of Chicago | Fabrication of high temperature superconductors |
US20030130129A1 (en) * | 2001-07-13 | 2003-07-10 | Massachusetts Institute Of Technology | Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing |
DE10136891B4 (en) * | 2001-07-25 | 2004-07-22 | Siemens Ag | Method for producing a flat base material made of metal |
DE10136890B4 (en) * | 2001-07-25 | 2006-04-20 | Siemens Ag | Method and apparatus for producing a crystal textured textured metal strip and ribbon |
JP2003055095A (en) * | 2001-08-07 | 2003-02-26 | Sumitomo Electric Ind Ltd | Thin film deposition process |
US6610414B2 (en) | 2001-08-16 | 2003-08-26 | Ut-Battelle, Llc | Biaxially textured articles formed by power metallurgy |
GB0120697D0 (en) * | 2001-08-24 | 2001-10-17 | Coated Conductors Consultancy | Superconducting coil fabrication |
DE10140956A1 (en) * | 2001-08-27 | 2003-03-27 | Univ Braunschweig Tech Carolo Wilhelmina | Process for coating oxidizable materials with layers containing oxides |
DE10143680C1 (en) * | 2001-08-30 | 2003-05-08 | Leibniz Inst Fuer Festkoerper | Process for the production of metal strips with high-grade cube texture |
US6794339B2 (en) * | 2001-09-12 | 2004-09-21 | Brookhaven Science Associates | Synthesis of YBa2CU3O7 using sub-atmospheric processing |
DE10148889A1 (en) * | 2001-09-21 | 2003-06-26 | Leibniz Inst Fuer Festkoerper | Nickel-based carrier material and process for its production |
JPWO2003050826A1 (en) * | 2001-12-10 | 2005-04-21 | 三菱電機株式会社 | Metal substrate for oxide superconducting thick film and method for producing the same |
DE10200445B4 (en) * | 2002-01-02 | 2005-12-08 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Metal strip for epitaxial coatings and process for its production |
US6645313B2 (en) * | 2002-02-22 | 2003-11-11 | Ut-Battelle, Llc | Powder-in-tube and thick-film methods of fabricating high temperature superconductors having enhanced biaxial texture |
US6670308B2 (en) | 2002-03-19 | 2003-12-30 | Ut-Battelle, Llc | Method of depositing epitaxial layers on a substrate |
US6925316B2 (en) * | 2002-04-08 | 2005-08-02 | Christopher M. Rey | Method of forming superconducting magnets using stacked LTS/HTS coated conductor |
US20040129559A1 (en) * | 2002-04-12 | 2004-07-08 | Misner Josh W. | Diffusion bonded assemblies and fabrication methods |
US6946428B2 (en) * | 2002-05-10 | 2005-09-20 | Christopher M. Rey | Magnesium -boride superconducting wires fabricated using thin high temperature fibers |
DE10226392C1 (en) * | 2002-06-13 | 2003-08-28 | Siemens Ag | Longitudinally extending superconducting structure comprises a biaxially textured support made from nickel, an intermediate system deposited on the support and a superconducting layer made from a high Tc superconducting material |
US7087113B2 (en) * | 2002-07-03 | 2006-08-08 | Ut-Battelle, Llc | Textured substrate tape and devices thereof |
US20040020430A1 (en) * | 2002-07-26 | 2004-02-05 | Metal Oxide Technologies, Inc. | Method and apparatus for forming a thin film on a tape substrate |
US20040023810A1 (en) * | 2002-07-26 | 2004-02-05 | Alex Ignatiev | Superconductor material on a tape substrate |
US20040016401A1 (en) * | 2002-07-26 | 2004-01-29 | Metal Oxide Technologies, Inc. | Method and apparatus for forming superconductor material on a tape substrate |
JP3854551B2 (en) * | 2002-08-06 | 2006-12-06 | 財団法人国際超電導産業技術研究センター | Oxide superconducting wire |
US6764770B2 (en) | 2002-12-19 | 2004-07-20 | Ut-Battelle, Llc | Buffer layers and articles for electronic devices |
US20060049057A1 (en) * | 2002-12-20 | 2006-03-09 | Midwest Research Institute | Electrodeposition of biaxial textured films |
WO2004073024A2 (en) * | 2003-02-06 | 2004-08-26 | Brown University | Method and apparatus for making continuous films ofa single crystal material |
US20040157747A1 (en) * | 2003-02-10 | 2004-08-12 | The University Of Houston System | Biaxially textured single buffer layer for superconductive articles |
WO2004088677A1 (en) * | 2003-03-31 | 2004-10-14 | The Furukawa Electric Co., Ltd. | Metal base plate for oxide superconductive wire rod, oxide superconductive wire rod and process for producing the same |
US6849580B2 (en) * | 2003-06-09 | 2005-02-01 | University Of Florida | Method of producing biaxially textured buffer layers and related articles, devices and systems |
US8153281B2 (en) * | 2003-06-23 | 2012-04-10 | Superpower, Inc. | Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape |
US6906008B2 (en) * | 2003-06-26 | 2005-06-14 | Superpower, Inc. | Apparatus for consecutive deposition of high-temperature superconducting (HTS) buffer layers |
US6740421B1 (en) | 2003-07-14 | 2004-05-25 | Ut-Battelle, Llc | Rolling process for producing biaxially textured substrates |
US20050014653A1 (en) | 2003-07-16 | 2005-01-20 | Superpower, Inc. | Methods for forming superconductor articles and XRD methods for characterizing same |
US20050016759A1 (en) * | 2003-07-21 | 2005-01-27 | Malozemoff Alexis P. | High temperature superconducting devices and related methods |
US7711088B2 (en) * | 2003-07-22 | 2010-05-04 | X-Ray Optical Systems, Inc. | Method and system for X-ray diffraction measurements using an aligned source and detector rotating around a sample surface |
US7025826B2 (en) * | 2003-08-19 | 2006-04-11 | Superpower, Inc. | Methods for surface-biaxially-texturing amorphous films |
DE10339867B4 (en) * | 2003-08-25 | 2007-12-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Method for the production of metallic flat wires or tapes with cube texture |
US20050048329A1 (en) * | 2003-08-26 | 2005-03-03 | The University Of Chicago | Layered structure of Cu-containing superconductor and Ag or Ag alloys with Cu |
DE10342965A1 (en) * | 2003-09-10 | 2005-06-02 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Nickel-based semifinished product with a recrystallization cube texture and process for its production |
US20050092253A1 (en) * | 2003-11-04 | 2005-05-05 | Venkat Selvamanickam | Tape-manufacturing system having extended operational capabilites |
US7510819B2 (en) * | 2003-11-10 | 2009-03-31 | Board Of Regents, University Of Houston | Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers |
JP2005166781A (en) * | 2003-12-01 | 2005-06-23 | Seiko Epson Corp | Piezoelectric device, liquid discharge head, their manufacturing methods, and thin film forming device |
US7146034B2 (en) * | 2003-12-09 | 2006-12-05 | Superpower, Inc. | Tape manufacturing system |
CN100365839C (en) * | 2003-12-15 | 2008-01-30 | 北京有色金属研究总院 | Multilayer biaxial orienting insulation layer structure and high-temperature superconductive coating conductor and preparing method thereof |
US6872988B1 (en) | 2004-03-23 | 2005-03-29 | Ut-Battelle, Llc | Semiconductor films on flexible iridium substrates |
US7432229B2 (en) * | 2004-03-23 | 2008-10-07 | Ut-Battelle, Llc | Superconductors on iridium substrates and buffer layers |
US20050223983A1 (en) * | 2004-04-08 | 2005-10-13 | Venkat Selvamanickam | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US20050223984A1 (en) * | 2004-04-08 | 2005-10-13 | Hee-Gyoun Lee | Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors |
US7387811B2 (en) * | 2004-09-21 | 2008-06-17 | Superpower, Inc. | Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD) |
US7569521B2 (en) * | 2004-12-01 | 2009-08-04 | University Of Florida Research Foundation, Inc. | Method of producing biaxially textured substrates and related articles, devices and systems |
US7619272B2 (en) * | 2004-12-07 | 2009-11-17 | Lsi Corporation | Bi-axial texturing of high-K dielectric films to reduce leakage currents |
KR100624665B1 (en) * | 2005-01-20 | 2006-09-19 | 한국기계연구원 | Low magnetic loss metal tape with biaxial texture and method of manufacturing |
DE102005013368B3 (en) * | 2005-03-16 | 2006-04-13 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Making nickel-based blank with cubic recrystallization structure for use as backing for high temperature superconductor, employs silver micro-alloying and specified thermal and mechanical treatments |
CN100368597C (en) * | 2005-04-22 | 2008-02-13 | 中国科学院物理研究所 | Method for preparing YBCO high temperature superconducting film on non-texture metal baseband |
JP2009503269A (en) * | 2005-08-01 | 2009-01-29 | ミッドウエスト リサーチ インスティチュート | Electrodeposition of biaxially textured layers on substrates |
US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
KR100691061B1 (en) * | 2005-08-30 | 2007-03-09 | 엘에스전선 주식회사 | Substrate for superconducting wire and fabrication method thereof and superconducting wire |
WO2007041532A2 (en) * | 2005-10-03 | 2007-04-12 | Massachusetts Institute Of Technology | Magnet system for magnetic resonance spectroscopy comprising superconducting annuli |
JP2007311194A (en) * | 2006-05-18 | 2007-11-29 | Sumitomo Electric Ind Ltd | Superconducting thin film material and its manufacturing method |
CN100374596C (en) * | 2006-05-19 | 2008-03-12 | 北京工业大学 | Ni-base alloy composite baseband and powder metallurgy method for preparing same |
US20080146452A1 (en) * | 2006-10-26 | 2008-06-19 | Dae Yeong Jeong | (113) [121] Textured Ag substrate and Tl-1223 high temperature superconducting coated conductor using the same |
EP1916720B1 (en) * | 2006-10-27 | 2008-12-24 | Nexans | Method for the production of superconducting electrical conductor |
US7879763B2 (en) * | 2006-11-10 | 2011-02-01 | Superpower, Inc. | Superconducting article and method of making |
ES2356755T3 (en) | 2006-11-17 | 2011-04-12 | Nexans | PROCEDURE FOR THE MANUFACTURE OF A SUPERCONDUCTIVE ELECTRIC DRIVER. |
KR100807640B1 (en) * | 2006-12-22 | 2008-02-28 | 한국기계연구원 | Synthesizing precursor solution enabling fabricating biaxially textured buffer layers by low temperature annealing |
US8741158B2 (en) | 2010-10-08 | 2014-06-03 | Ut-Battelle, Llc | Superhydrophobic transparent glass (STG) thin film articles |
DE102007024166B4 (en) * | 2007-05-24 | 2011-01-05 | Zenergy Power Gmbh | A method of processing a metal substrate and using it for a high temperature superconductor |
JP2008303082A (en) * | 2007-06-05 | 2008-12-18 | Kagoshima Univ | Interlayer of orientational substrate for forming epitaxial film and orientational substrate for forming epitaxial film |
US7879161B2 (en) * | 2007-08-08 | 2011-02-01 | Ut-Battelle, Llc | Strong, non-magnetic, cube textured alloy substrates |
JP5324763B2 (en) * | 2007-08-21 | 2013-10-23 | 中部電力株式会社 | Alignment substrate for epitaxial film formation and surface modification method for alignment substrate for epitaxial film formation |
US8227082B2 (en) * | 2007-09-26 | 2012-07-24 | Ut-Battelle, Llc | Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom |
CA2749804A1 (en) * | 2008-03-06 | 2009-09-11 | Amit Goyal | Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates |
US20100015340A1 (en) * | 2008-07-17 | 2010-01-21 | Zenergy Power Inc. | COMPOSITIONS AND METHODS FOR THE MANUFACTURE OF RARE EARTH METAL-Ba2Cu3O7-delta THIN FILMS |
US7919435B2 (en) | 2008-09-30 | 2011-04-05 | Ut-Battelle, Llc | Superconductor films with improved flux pinning and reduced AC losses |
JP5382911B2 (en) | 2008-11-12 | 2014-01-08 | 東洋鋼鈑株式会社 | Method for producing metal laminated substrate for oxide superconducting wire and oxide superconducting wire using the substrate |
WO2010055613A1 (en) | 2008-11-12 | 2010-05-20 | 東洋鋼鈑株式会社 | Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor |
JP5448425B2 (en) * | 2008-11-21 | 2014-03-19 | 公益財団法人国際超電導産業技術研究センター | Superconducting film deposition substrate, superconducting wire, and method for producing them |
US8664163B2 (en) * | 2009-01-15 | 2014-03-04 | Ramot At Tel-Aviv University Ltd. | High temperature superconductive films and methods of making them |
US9349935B2 (en) * | 2009-01-15 | 2016-05-24 | Technology Innovation Momentum Fund (Israel) Limited Partnership | High temperature superconductive films and methods of making them |
WO2010088366A1 (en) * | 2009-01-28 | 2010-08-05 | Wakonda Technologies, Inc. | Large-grain crystalline thin-film structures and devices and methods for forming the same |
US20100270653A1 (en) * | 2009-04-24 | 2010-10-28 | Christopher Leitz | Crystalline thin-film photovoltaic structures and methods for forming the same |
US20110034336A1 (en) * | 2009-08-04 | 2011-02-10 | Amit Goyal | CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS |
US20110034338A1 (en) * | 2009-08-04 | 2011-02-10 | Amit Goyal | CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS |
WO2011052552A1 (en) * | 2009-10-27 | 2011-05-05 | 古河電気工業株式会社 | Tape base material for a superconducting wire rod, and superconducting wire rod |
EP2337102B1 (en) | 2009-12-15 | 2013-05-22 | Nexans | Superconducting conductor and method for producing a superconducting electric conductor |
US8486864B2 (en) * | 2009-12-29 | 2013-07-16 | Ut-Battelle, Llc | Method for producing microstructured templates and their use in providing pinning enhancements in superconducting films deposited thereon |
US8221909B2 (en) * | 2009-12-29 | 2012-07-17 | Ut-Battelle, Llc | Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same |
CN102804434A (en) * | 2010-03-26 | 2012-11-28 | 俄亥俄大学 | Engineering of an ultra-thin molecular superconductor by charge transfer |
KR100998851B1 (en) | 2010-05-27 | 2010-12-08 | 한국기계연구원 | An method of forming buffer layers for superconducting tape |
DE102010031058A1 (en) | 2010-07-07 | 2012-01-12 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Metallic profile wire with recrystallization cube texture and process for its production |
US8685549B2 (en) | 2010-08-04 | 2014-04-01 | Ut-Battelle, Llc | Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same |
EP2442376A1 (en) | 2010-10-05 | 2012-04-18 | Nexans | Superconducting cable and method for producing a superconducting electric cable |
US11292919B2 (en) | 2010-10-08 | 2022-04-05 | Ut-Battelle, Llc | Anti-fingerprint coatings |
US9221076B2 (en) | 2010-11-02 | 2015-12-29 | Ut-Battelle, Llc | Composition for forming an optically transparent, superhydrophobic coating |
JP5819977B2 (en) | 2010-11-22 | 2015-11-24 | エレクトロマグネティクス コーポレーション | Device for tailoring substances |
US8993092B2 (en) | 2011-02-18 | 2015-03-31 | Ut-Battelle, Llc | Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same |
US8748350B2 (en) * | 2011-04-15 | 2014-06-10 | Ut-Battelle | Chemical solution seed layer for rabits tapes |
US8748349B2 (en) | 2011-04-15 | 2014-06-10 | Ut-Battelle, Llc | Buffer layers for REBCO films for use in superconducting devices |
RU2451766C1 (en) * | 2011-05-16 | 2012-05-27 | Учреждение Российской академии наук Ордена Трудового Красного Знамени Институт физики металлов Уральского отделения РАН (ИФМ УрО РАН) | Method for biaxial textured substrate production from binary alloy on basis of nickel for epitaxial application of buffer and high-temperature superconductive layers for ribbon superconductors to substrate |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA697916A (en) * | 1964-11-17 | R. Pflumm Heinz | Alloying | |
US3770497A (en) * | 1970-03-26 | 1973-11-06 | Siemens Ag | Method of producing a two layer contact piece |
JPH01100818A (en) * | 1987-10-14 | 1989-04-19 | Fujikura Ltd | High temperature superconducting material |
JPH01100820A (en) * | 1987-10-14 | 1989-04-19 | Fujikura Ltd | High temperature superconducting material |
US5212148A (en) * | 1988-05-11 | 1993-05-18 | Siemens Aktiengesellschaft | Method for manufacturing oxide superconducting films by laser evaporation |
US5248662A (en) * | 1991-01-31 | 1993-09-28 | Sumitomo Electric Industries | Laser ablation method of preparing oxide superconducting films on elongated substrates |
US5290761A (en) * | 1992-10-19 | 1994-03-01 | E. I. Du Pont De Nemours And Company | Process for making oxide superconducting films by pulsed excimer laser ablation |
US5312804A (en) * | 1991-10-29 | 1994-05-17 | Alcatel Cable | Method of fabricating a superconductive flexible ceramic conductor having a high critical temperature |
JPH06139848A (en) * | 1992-10-27 | 1994-05-20 | Sumitomo Electric Ind Ltd | Manufacture of oxide high-temperature superconducting wire rod |
US5330966A (en) * | 1990-03-08 | 1994-07-19 | Sumitomo Electric Industries, Inc. | Method of preparing 2223 phase (Bi,Pb)-Sr-Ca-Cu-O superconducting films |
US5372089A (en) * | 1992-07-30 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Method of forming single-crystalline thin film |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5661112A (en) * | 1987-07-24 | 1997-08-26 | Hatta; Shinichiro | Superconductor |
US5104456A (en) * | 1990-02-15 | 1992-04-14 | Colorado School Of Mines | Process for optimizing titanium and zirconium additions to aluminum welding consumables |
US5145832A (en) * | 1991-05-22 | 1992-09-08 | Bell Communications Research, Inc. | Superconducting film on a flexible two-layer zirconia substrate |
US5340797A (en) * | 1993-01-29 | 1994-08-23 | Illinois Superconductor Corporation | Superconducting 123YBaCu-oxide produced at low temperatures |
US5432151A (en) * | 1993-07-12 | 1995-07-11 | Regents Of The University Of California | Process for ion-assisted laser deposition of biaxially textured layer on substrate |
US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
-
1995
- 1995-04-10 US US08/419,583 patent/US5741377A/en not_active Expired - Lifetime
-
1996
- 1996-04-10 AU AU55398/96A patent/AU713892B2/en not_active Expired
- 1996-04-10 ES ES96912663T patent/ES2268703T3/en not_active Expired - Lifetime
- 1996-04-10 DE DE69636162T patent/DE69636162T2/en not_active Expired - Lifetime
- 1996-04-10 KR KR1019970707198A patent/KR100418279B1/en not_active IP Right Cessation
- 1996-04-10 CA CA002217822A patent/CA2217822C/en not_active Expired - Lifetime
- 1996-04-10 AT AT96912663T patent/ATE327049T1/en not_active IP Right Cessation
- 1996-04-10 WO PCT/US1996/004934 patent/WO1996032201A1/en active IP Right Grant
- 1996-04-10 JP JP53114096A patent/JP3601830B2/en not_active Expired - Lifetime
- 1996-04-10 EP EP96912663A patent/EP0830218B1/en not_active Expired - Lifetime
- 1996-05-22 US US08/650,249 patent/US5898020A/en not_active Expired - Lifetime
- 1996-05-22 US US08/651,291 patent/US5739086A/en not_active Expired - Lifetime
- 1996-06-26 US US08/670,871 patent/US5968877A/en not_active Expired - Lifetime
-
1998
- 1998-01-09 US US09/005,381 patent/US5958599A/en not_active Expired - Lifetime
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA697916A (en) * | 1964-11-17 | R. Pflumm Heinz | Alloying | |
US3770497A (en) * | 1970-03-26 | 1973-11-06 | Siemens Ag | Method of producing a two layer contact piece |
JPH01100818A (en) * | 1987-10-14 | 1989-04-19 | Fujikura Ltd | High temperature superconducting material |
JPH01100820A (en) * | 1987-10-14 | 1989-04-19 | Fujikura Ltd | High temperature superconducting material |
US5212148A (en) * | 1988-05-11 | 1993-05-18 | Siemens Aktiengesellschaft | Method for manufacturing oxide superconducting films by laser evaporation |
US5330966A (en) * | 1990-03-08 | 1994-07-19 | Sumitomo Electric Industries, Inc. | Method of preparing 2223 phase (Bi,Pb)-Sr-Ca-Cu-O superconducting films |
US5248662A (en) * | 1991-01-31 | 1993-09-28 | Sumitomo Electric Industries | Laser ablation method of preparing oxide superconducting films on elongated substrates |
US5312804A (en) * | 1991-10-29 | 1994-05-17 | Alcatel Cable | Method of fabricating a superconductive flexible ceramic conductor having a high critical temperature |
US5372089A (en) * | 1992-07-30 | 1994-12-13 | Sumitomo Electric Industries, Ltd. | Method of forming single-crystalline thin film |
US5290761A (en) * | 1992-10-19 | 1994-03-01 | E. I. Du Pont De Nemours And Company | Process for making oxide superconducting films by pulsed excimer laser ablation |
JPH06139848A (en) * | 1992-10-27 | 1994-05-20 | Sumitomo Electric Ind Ltd | Manufacture of oxide high-temperature superconducting wire rod |
Non-Patent Citations (2)
Title |
---|
APPL. PHYS. LETT., Vol. 62, No. 15, 12 April 1993, BUDAI et al., "In-Plane Epitaxial Alignment of YBa2Cu307-x Films Grown on Silver Crystals and Buffer Layers", pp. 1836-1838. * |
PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM OF SUPERCONDUCTIVITY, FUKUOKA, JAPAN, 8-11 November 1994, DOI et al., "A New Type of Superconducting Wire; Biaxially Oriented T11(Ba0.8Sr0.2)2 Ca2Cu309 on {100}<100> Textured Silver Tape". * |
Cited By (21)
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US5968877A (en) * | 1995-04-10 | 1999-10-19 | Lockheed Martin Energy Research Corp | High Tc YBCO superconductor deposited on biaxially textured Ni substrate |
US6172009B1 (en) | 1997-06-18 | 2001-01-09 | Massachusetts Institute Of Technology | Controlled conversion of metal oxyfluorides into superconducting oxides |
US6610428B2 (en) | 1997-06-18 | 2003-08-26 | Massachusetts Institute Of Technology | Controlled conversion of metal oxyfluorides into superconducting oxides |
US6486100B1 (en) * | 1997-09-16 | 2002-11-26 | Ut-Battelle, Llc | Method for preparing preferentially oriented, high temperature superconductors using solution reagents |
US6256521B1 (en) | 1997-09-16 | 2001-07-03 | Ut-Battelle, Llc | Preferentially oriented, High temperature superconductors by seeding and a method for their preparation |
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US6022832A (en) * | 1997-09-23 | 2000-02-08 | American Superconductor Corporation | Low vacuum vapor process for producing superconductor articles with epitaxial layers |
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GB2336849B (en) * | 1998-04-27 | 2003-02-26 | Telcon Ltd | Substrate materials |
EP0977283A3 (en) * | 1998-04-27 | 2002-03-20 | Carpenter Technology (UK) Ltd. | Substrate materials for oxide superconductors |
US6251834B1 (en) | 1998-04-27 | 2001-06-26 | Carpenter Technology (Uk) Limited | Substrate materials |
EP0977283A2 (en) * | 1998-04-27 | 2000-02-02 | Carpenter Technology (UK) Ltd. | Substrate materials for oxide superconductors |
GB2336849A (en) * | 1998-04-27 | 1999-11-03 | Telcon Ltd | A nickel alloy substrate layer for oxide superconductors |
US6375768B1 (en) * | 1998-07-09 | 2002-04-23 | Ut-Battelle, Llc | Method for making biaxially textured articles by plastic deformation |
US6180570B1 (en) * | 1998-07-09 | 2001-01-30 | Ut-Battelle, Llc | Biaxially textured articles formed by plastic deformation |
JP2011044705A (en) * | 1999-01-12 | 2011-03-03 | Ngimat Co | Epitaxial thin film |
US8865627B2 (en) | 2008-11-28 | 2014-10-21 | Sumitomo Electric Industries, Ltd. | Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire |
US9570215B2 (en) | 2008-11-28 | 2017-02-14 | Sumitomo Electric Industries, Ltd. | Method for manufacturing precursor, method for manufacturing superconducting wire, precursor, and superconducting wire |
Also Published As
Publication number | Publication date |
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US5958599A (en) | 1999-09-28 |
CA2217822C (en) | 2004-11-23 |
DE69636162D1 (en) | 2006-06-29 |
AU5539896A (en) | 1996-10-30 |
EP0830218A1 (en) | 1998-03-25 |
KR100418279B1 (en) | 2004-03-19 |
ATE327049T1 (en) | 2006-06-15 |
AU713892B2 (en) | 1999-12-16 |
US5898020A (en) | 1999-04-27 |
CA2217822A1 (en) | 1996-10-17 |
KR19980703798A (en) | 1998-12-05 |
US5968877A (en) | 1999-10-19 |
US5739086A (en) | 1998-04-14 |
DE69636162T2 (en) | 2007-03-15 |
JP3601830B2 (en) | 2004-12-15 |
US5741377A (en) | 1998-04-21 |
ES2268703T3 (en) | 2007-03-16 |
JPH11504612A (en) | 1999-04-27 |
EP0830218B1 (en) | 2006-05-24 |
EP0830218A4 (en) | 2000-05-10 |
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