WO1996027913A1 - Microstrip-to-waveguide transition - Google Patents

Microstrip-to-waveguide transition Download PDF

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Publication number
WO1996027913A1
WO1996027913A1 PCT/FI1996/000130 FI9600130W WO9627913A1 WO 1996027913 A1 WO1996027913 A1 WO 1996027913A1 FI 9600130 W FI9600130 W FI 9600130W WO 9627913 A1 WO9627913 A1 WO 9627913A1
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Prior art keywords
waveguide
microstrip
transition
resonator
fined
Prior art date
Application number
PCT/FI1996/000130
Other languages
French (fr)
Inventor
Lassi Hyvönen
Arto Hujanen
Original Assignee
Valtion Teknillinen Tutkimuskeskus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of WO1996027913A1 publication Critical patent/WO1996027913A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to a micros- trip-to-waveguide transition as defined in the preamble of claim 1.
  • Previously known are a few microstrip-to- waveguide transitions used to transfer energy from a microstrip to a waveguide in the micro and millimetre wavelength range.
  • Such known transitions include at least three types: ridge waveguide type transition, fin wire type transition and probe type transition. A feature common to all of these transitions is that they are difficult to manufacture and are not herme- tic.
  • Previously known is also a microstrip-to- waveguide transition in which the transition has been developed from a patch aerial and which comprises a microstrip on a planar substrate above a coupling iris in a ground plane. Moreover, the transition comprises a dipole element (patch aerial) placed below the coup- ling iris and supported by another planar substrate. A rectangular strip plate (dipole element) on the sub ⁇ strate constitutes a radiating resonator. Such a tran ⁇ sition is described in the German patent specification DE 4208 458. In the transition presented in said specifi ⁇ cation, power is coupled from the microstrip to the waveguide via a dipole element.
  • the coupling iris must be so di ⁇ mensioned that the resonant frequency of the iris lies clearly above the operating frequency of the transition.
  • a design is regarded as being typical of the iris of patch aeri ⁇ als. Therefore, the physical size of the iris will be relatively small.
  • the dielectric constant of the material between the coupling iris and the dipole element is as low as possible, preferably the material between the coupling iris and the dipole element is air, which has a dielectric constant of 1.
  • Such a microstrip aerial typically has a very narrow bandwidth, especially when the substrate con ⁇ sists of a material with a high dielectric constant.
  • a problem with a transition using a patch aerial is a small bandwidth, in other words, po- was transfer must be confined to a narrow frequency band.
  • wide-band opera ⁇ tion is needed, so a narrow-band transition cannot be used.
  • the transition needs to be made to precise dimensions to be matched, so an accu- rate manufacturing process is required.
  • the object of the present invention is to eliminate the problems referred to above or at least to alleviate them significantly.
  • a specific object of the present invention is to produce a new type of microstrip-to-waveguide transition which can easily be manufactured as a hermetic design and which has a lar ⁇ ge bandwidth.
  • a further object of the present invention is to produce a microstrip-to-waveguide transition which is simple and cheap to implement.
  • the above invention relates to a microstrip- to-waveguide transition in the micro and/or millimetre range.
  • the transition comprises a waveguide, a micros- trip placed at one end of the waveguide, and a ground plane with a coupling iris between the microstrip and the waveguide.
  • the coupling iris in the waveguide is a resonator made of a dielectric material for the coupling of po ⁇ was via the coupling iris to the resonator and further to the waveguide.
  • the resonator extends to the ground plane, leaving between the resonator and ground plane no air gap, which has to be considered in determining the dimensions of the resonator.
  • the bandwidth can be further improved by in ⁇ creasing the thickness of the dielectric plate.
  • the transition requires a larger coupling iris to be matched. Therefore, the re ⁇ sonant frequency of the coupling iris will be close to the operating frequency of the transition.
  • ⁇ corresponds to the wavelength at the ope- rating frequency of the transition - it has been es ⁇ tablished that the transition will match best when the resonance of the iris lies below the operating fre ⁇ quency of the transition.
  • the iris resonance is gene- rally at a frequency considerably higher than the ope ⁇ rating frequency of the transition.
  • the present invention has the advantage that the bandwidth at the operating frequency is signifi ⁇ cantly larger than in the case of corresponding herme- tic and productive structures. Furthermore, the tran ⁇ sition of the present invention is not so sensitive to changes in the production process as previously known microstrip-to-waveguide transitions. Therefore, the present invention makes the manufacture of the micros- trip-to-waveguide transition economically more reaso ⁇ nable than before.
  • the die ⁇ lectric constant of the resonator, ⁇ r is about 5 - 15, advantageously about 6 - 10 and preferably about 7.5.
  • the value of the dielectric constant can be selected within the limits permitted by the materials available according to the properties desired in each case, de- pending on the other aspects of the transition design.
  • the reso ⁇ nator comprises a metal strip placed on the opposite side of the resonator relative to the coupling iris.
  • the metal strip is very thin and it can be produced by making a desired metal pattern on the sur ⁇ face of the resonator.
  • the ground plane with the coupling iris can be prepared on the opposite sur ⁇ face of the microstrip substrate relative to the microstrip. This makes it possible to avoid adding a separate component, the ground plane, to the transition structure.
  • the width of the metal strip is so chosen that it is smaller than the width of the coupling iris.
  • the transi ⁇ tion has a compact structure and wide bandwidth. Both edges of the passband are steep, and the passband has at least two resonances - one resonance will not pro ⁇ vide a similar passband steepness.
  • the resonator may com ⁇ prise a metal strip having a very large width in rela ⁇ tion to the coupling iris. In this case the transition has a very wide passband, considering the small size of the structure.
  • Fig . 5 presents a measurement re- suit for a structure with a wide metal strip. Within an electrically short distance, many phenomena occur which together render the transition a wide-band one.
  • a wide metal strip has a larger resonance bandwidth than a narrow one.
  • the current distribution is concentrated on both edges as in the case of a microstrip.
  • the current distribution is spread over a larger area, which fits well into the field pattern of the basic waveguide waveform.
  • a wide metal strip is also better at evoking resonant waveforms in the dielectric reso ⁇ nator, broadening the bandwidth of the transition.
  • the bandwidth can be in- creased to a width as large as three or four times the bandwidth obtained by means of a small metal strip.
  • a preferred waveguide may be of a rectangu ⁇ lar, round, polygonal or elliptic shape in cross- section.
  • Fig. 1 presents a transition as provided by the invention
  • Fig. 2a and 2b illustrate the quarter-wave transformer effect of a dielectric piece both in void and in a waveguide
  • Fig. 3 presents a transition as provided by invention
  • Fig. 4 presents a mirror image of the resona ⁇ tor in a transition as provided by invention.
  • Fig. 5 presents a measured frequency response characteristic of a transition as provided by inventi ⁇ on.
  • the microstrip-to-waveguide transition pre ⁇ sented in Fig. 1 comprises a waveguide 1, a microstrip 3 placed at one end 2 of the waveguide and a ground plane 4 with a coupling iris 5, fitted between the microstrip and the waveguide.
  • the micros- trip-to-waveguide transition comprises a resonator 6 fitted below the coupling iris 5 and made of a dielec ⁇ tric material, so that power is coupled via the coup ⁇ ling iris to the resonator and further to the wavegui ⁇ de.
  • the distance of the free end 9 of the microstrip, the length of the so-called open stub as measured from the centre of the coupling iris 5 is about ⁇ /4, brin ⁇ ging the maximum of the magnetic field to the centre of the coupling iris 5 while the maximum of the elec ⁇ tric field occurs at the end of the open stub 9.
  • a dielec ⁇ tric piece having a quarter-wave thickness functions in the transition as a quarter-wave transformer.
  • the situation can be illustrated with a free-space example.
  • the impedance ⁇ 0 of free space is 377 ⁇
  • the impedance of the dielectric piece is ⁇ 0 /V ⁇
  • the impedance seen by the iris is to be 50 ⁇ . Therefore, the dielectric resonator or quarter-wave transformer, Fig. 2a, should now have an impedance of
  • the expression on the left side of the equa ⁇ tion is the impedance of a waveguide filled with die ⁇ lectric material, and the expression on the right side is the square root of the impedance of an air-filled waveguide multiplied by the assumed iris impedance Z 2 .
  • Z x is a coefficient by which the wave impedance of the waveguide is multiplied to obtain its characteristic impedance.
  • Z x is dependent on the definition of impe ⁇ dance.
  • the iris impedance should be determined using the same impedance definition.
  • a suitable die- lectric constant will be as follows:
  • the iris can be used in itself as an impedance transformer, but if the iris is to match a large impedance, it will have a narrow bandwidth. Since there is already a low impedance in front of the iris, the iris coupling will have a broa- der bandwidth. It is to be noted that if the quarter- wave transformer effect is to be utilized, the resona ⁇ tor must have a fairly high dielectric constant.
  • a larger number of pa ⁇ rasitic elements 8 can be added.
  • the elements have the same resonant frequencies or they are tuned to a slightly different frequency than the resonant fre ⁇ quency of the metal strip 7.
  • evoked waveforms are those which have an even index n and an odd index m, because these waveforms have a symmetry in both horizontal and ver ⁇ tical symmetry levels, as do the iris at the end of the waveguide and the metal strip.
  • Some of these wave- forms may resonate in the dielectric resonator.
  • Fig. 4 illustrates such a resonator.
  • the dielectric piece can be thought of as seeing its mirror image behind its ground plane, on the right in Fig. 4, which gives the piece a half-wave thickness.
  • German patent speci ⁇ fication DE 4208458 the specification starts out from a patch aerial, which has been developed into a tran ⁇ sition.
  • the star ⁇ ting point is that power is coupled in the structure via the coupling iris between the microstrip and the waveguide.
  • Placed in front of the coupling iris is a plate having a thickness of about ⁇ /4 and a high die ⁇ lectric constant, which acts as a quarter-wave trans ⁇ former and as a dielectric resonator.
  • the transition functions well even in this form, but it can be furt- her improved if a suitable metal strip is placed in front of the quarter-wave transformer or dielectric piece.
  • the essential property of the structure is that it utilizes the quarter-wave transformer effect achie ⁇ ved by using a high dielectric constant. Also, making use of the resonances created in the quarter-wave thick plate as a phenomenon improving the bandwidth is a significant improvement with respect to the German specification referred to.

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Abstract

The present invention relates to a microstrip-to-waveguide transition in the micro and/or millimetre wavelength range, said transition comprising a waveguide (1), a microstrip (3) placed at one end of the waveguide, and a ground plane (4) with a coupling iris (5) between the microstrip and the waveguide. According to the invention, the transition is provided with a resonator (6) consisting of dielectric material and placed below the coupling iris (5) in the waveguide (1) for the coupling of power via the coupling iris to the resonator and further to the waveguide.

Description

MICROSTRIP-TO- AVEGUIDE TRANSITION
The present invention relates to a micros- trip-to-waveguide transition as defined in the preamble of claim 1. Previously known are a few microstrip-to- waveguide transitions used to transfer energy from a microstrip to a waveguide in the micro and millimetre wavelength range. Such known transitions include at least three types: ridge waveguide type transition, fin wire type transition and probe type transition. A feature common to all of these transitions is that they are difficult to manufacture and are not herme- tic.
Previously known is also a microstrip-to- waveguide transition in which the transition has been developed from a patch aerial and which comprises a microstrip on a planar substrate above a coupling iris in a ground plane. Moreover, the transition comprises a dipole element (patch aerial) placed below the coup- ling iris and supported by another planar substrate. A rectangular strip plate (dipole element) on the sub¬ strate constitutes a radiating resonator. Such a tran¬ sition is described in the German patent specification DE 4208 458. In the transition presented in said specifi¬ cation, power is coupled from the microstrip to the waveguide via a dipole element. Furthermore, according to the specification, the coupling iris must be so di¬ mensioned that the resonant frequency of the iris lies clearly above the operating frequency of the transition. In relevant literature, such a design is regarded as being typical of the iris of patch aeri¬ als. Therefore, the physical size of the iris will be relatively small. In addition, in the transition pre- sented in the above-mentioned specification, it is es¬ sential that the dielectric constant of the material between the coupling iris and the dipole element is as low as possible, preferably the material between the coupling iris and the dipole element is air, which has a dielectric constant of 1. Such a microstrip aerial typically has a very narrow bandwidth, especially when the substrate con¬ sists of a material with a high dielectric constant.
Thus, a problem with a transition using a patch aerial is a small bandwidth, in other words, po- wer transfer must be confined to a narrow frequency band. However, in many applications, wide-band opera¬ tion is needed, so a narrow-band transition cannot be used. On the other hand, the transition needs to be made to precise dimensions to be matched, so an accu- rate manufacturing process is required.
The object of the present invention is to eliminate the problems referred to above or at least to alleviate them significantly. A specific object of the present invention is to produce a new type of microstrip-to-waveguide transition which can easily be manufactured as a hermetic design and which has a lar¬ ge bandwidth.
A further object of the present invention is to produce a microstrip-to-waveguide transition which is simple and cheap to implement.
As for the features characteristic of the in¬ vention, reference is made to the claims.
The above invention relates to a microstrip- to-waveguide transition in the micro and/or millimetre range. The transition comprises a waveguide, a micros- trip placed at one end of the waveguide, and a ground plane with a coupling iris between the microstrip and the waveguide. According to the invention, placed be¬ low the coupling iris in the waveguide is a resonator made of a dielectric material for the coupling of po¬ wer via the coupling iris to the resonator and further to the waveguide. Preferably the resonator extends to the ground plane, leaving between the resonator and ground plane no air gap, which has to be considered in determining the dimensions of the resonator. However, it should be noted that it may be preferable in some solutions to provide an air gap between the resonator and the ground plane.
The bandwidth can be further improved by in¬ creasing the thickness of the dielectric plate. When the thickness is increased, the transition requires a larger coupling iris to be matched. Therefore, the re¬ sonant frequency of the coupling iris will be close to the operating frequency of the transition. When the dielectric piece has a thickness of λ/4 - in this app¬ lication, λ corresponds to the wavelength at the ope- rating frequency of the transition - it has been es¬ tablished that the transition will match best when the resonance of the iris lies below the operating fre¬ quency of the transition. In the case of known patch aerials fed via an iris, the iris resonance is gene- rally at a frequency considerably higher than the ope¬ rating frequency of the transition.
The present invention has the advantage that the bandwidth at the operating frequency is signifi¬ cantly larger than in the case of corresponding herme- tic and productive structures. Furthermore, the tran¬ sition of the present invention is not so sensitive to changes in the production process as previously known microstrip-to-waveguide transitions. Therefore, the present invention makes the manufacture of the micros- trip-to-waveguide transition economically more reaso¬ nable than before.
In an embodiment of the invention, the die¬ lectric constant of the resonator, εr, is about 5 - 15, advantageously about 6 - 10 and preferably about 7.5. The value of the dielectric constant can be selected within the limits permitted by the materials available according to the properties desired in each case, de- pending on the other aspects of the transition design.
In an embodiment of the invention, the reso¬ nator comprises a metal strip placed on the opposite side of the resonator relative to the coupling iris. Typically, the metal strip is very thin and it can be produced by making a desired metal pattern on the sur¬ face of the resonator. Further, the ground plane with the coupling iris can be prepared on the opposite sur¬ face of the microstrip substrate relative to the microstrip. This makes it possible to avoid adding a separate component, the ground plane, to the transition structure.
In an embodiment of the invention, the width of the metal strip is so chosen that it is smaller than the width of the coupling iris. Thus, the transi¬ tion has a compact structure and wide bandwidth. Both edges of the passband are steep, and the passband has at least two resonances - one resonance will not pro¬ vide a similar passband steepness. In another embodiment, the resonator may com¬ prise a metal strip having a very large width in rela¬ tion to the coupling iris. In this case the transition has a very wide passband, considering the small size of the structure. Fig . 5 presents a measurement re- suit for a structure with a wide metal strip. Within an electrically short distance, many phenomena occur which together render the transition a wide-band one. A wide metal strip has a larger resonance bandwidth than a narrow one. In the case of a small metal strip, the current distribution is concentrated on both edges as in the case of a microstrip. In a wide metal strip, the current distribution is spread over a larger area, which fits well into the field pattern of the basic waveguide waveform. A wide metal strip is also better at evoking resonant waveforms in the dielectric reso¬ nator, broadening the bandwidth of the transition.
It is also possible to increase the bandwidth by adding parasitic elements beside the metal strip. By means of such elements, when the resonant frequen¬ cies of the added parallel elements are adjusted to slightly different values, the bandwidth can be in- creased to a width as large as three or four times the bandwidth obtained by means of a small metal strip.
A preferred waveguide may be of a rectangu¬ lar, round, polygonal or elliptic shape in cross- section. In the following, the invention is described in detail by the aid of examples of its embodiments by referring to the attached drawing, in which:
Fig. 1 presents a transition as provided by the invention, Fig. 2a and 2b illustrate the quarter-wave transformer effect of a dielectric piece both in void and in a waveguide;
Fig. 3 presents a transition as provided by invention; Fig. 4 presents a mirror image of the resona¬ tor in a transition as provided by invention; and
Fig. 5 presents a measured frequency response characteristic of a transition as provided by inventi¬ on. The microstrip-to-waveguide transition pre¬ sented in Fig. 1 comprises a waveguide 1, a microstrip 3 placed at one end 2 of the waveguide and a ground plane 4 with a coupling iris 5, fitted between the microstrip and the waveguide. Moreover, the micros- trip-to-waveguide transition comprises a resonator 6 fitted below the coupling iris 5 and made of a dielec¬ tric material, so that power is coupled via the coup¬ ling iris to the resonator and further to the wavegui¬ de. The distance of the free end 9 of the microstrip, the length of the so-called open stub as measured from the centre of the coupling iris 5 is about λ/4, brin¬ ging the maximum of the magnetic field to the centre of the coupling iris 5 while the maximum of the elec¬ tric field occurs at the end of the open stub 9.
Referring to Fig. 2a and Fig. 2b, a dielec¬ tric piece having a quarter-wave thickness functions in the transition as a quarter-wave transformer. The situation can be illustrated with a free-space example. The impedance η0 of free space is 377 Ω, the impedance of the dielectric piece is η0 /Vε, and the impedance seen by the iris is to be 50 Ω. Therefore, the dielectric resonator or quarter-wave transformer, Fig. 2a, should now have an impedance of
'" where (1)
Figure imgf000008_0001
εr = dielectric constant of the resonator Z2 = assumed impedance of the coupling iris; and η0 = impedance of free space;
which yields as a suitable dielectric cons- tant value: εr = ^ = l,5 (2)
Correspondingly, in the situation presented in Fig. 2b, the following equation is obtained for the waveguide:
Figure imgf000008_0002
where εr = dielectric constant of resonator Zx = coefficient by which waveguide's wave impedance is multiplied to obtain characteristic impe- dance of waveguide;
Z2 = assumed impedance of coupling iris; η0 = impedance of free space; f = operating frequency; and fc = critical frequency
The expression on the left side of the equa¬ tion is the impedance of a waveguide filled with die¬ lectric material, and the expression on the right side is the square root of the impedance of an air-filled waveguide multiplied by the assumed iris impedance Z2. Zx is a coefficient by which the wave impedance of the waveguide is multiplied to obtain its characteristic impedance. Zx is dependent on the definition of impe¬ dance. The iris impedance should be determined using the same impedance definition. Thus, a suitable die- lectric constant will be as follows:
Figure imgf000009_0001
For example, with the power - voltage - impe¬ dance definition for a standard waveguide rectangular in cross-section in which the sides of the cross- section measure in the relation a = 2b, Zx equals 1. In a transition according to the invention, you have a frequency about 1.8 times higher than the critical frequency. In that case, the square root expression yields 0.8. If the impedance visible to the waveguide from the iris is to be 50 Ω, a suitable dielectric constant will be 6. For instance, the dielectric cons¬ tant of alumina is 9.8, so a quarter-wave transformer made of this material will reduce the waveguide's im- pedance to about 35 Ω. The iris can be used in itself as an impedance transformer, but if the iris is to match a large impedance, it will have a narrow bandwidth. Since there is already a low impedance in front of the iris, the iris coupling will have a broa- der bandwidth. It is to be noted that if the quarter- wave transformer effect is to be utilized, the resona¬ tor must have a fairly high dielectric constant.
Referring to Fig. 3, there are two parasitic elements 8 placed on the surface of the resonator 6. Depending on the design of and matching requirements regarding the transition, even a larger number of pa¬ rasitic elements 8 can be added. The elements have the same resonant frequencies or they are tuned to a slightly different frequency than the resonant fre¬ quency of the metal strip 7.
In the dielectric piece, many different wave¬ forms can propagate if evoked. Table 1 shows the so- called critical frequencies of waveforms m, n propaga¬ ting in the dielectric piece in this example, in a wa¬ veguide R 58; εr = 10.5 and the unit of frequency GHz.
Table 1
m, n 0 1 2 3 4 5 6
0 0 1.1461 2.2922 3.4383 4.5844 5.7305 6.8766
1 2.2924 2.5630 3.2418 4.1322 5.1256 6.1720 7.2486
2 4.5849 4.7259 5.1259 5.7309 6.4836 7.3389
3 6.8773 6.9721 7.2492
Of these, evoked waveforms are those which have an even index n and an odd index m, because these waveforms have a symmetry in both horizontal and ver¬ tical symmetry levels, as do the iris at the end of the waveguide and the metal strip. Some of these wave- forms may resonate in the dielectric resonator. Fig. 4 illustrates such a resonator. The dielectric piece can be thought of as seeing its mirror image behind its ground plane, on the right in Fig. 4, which gives the piece a half-wave thickness. Referring further to the German patent speci¬ fication DE 4208458, the specification starts out from a patch aerial, which has been developed into a tran¬ sition. In the transition of the invention, the star¬ ting point is that power is coupled in the structure via the coupling iris between the microstrip and the waveguide. Placed in front of the coupling iris is a plate having a thickness of about λ/4 and a high die¬ lectric constant, which acts as a quarter-wave trans¬ former and as a dielectric resonator. The transition functions well even in this form, but it can be furt- her improved if a suitable metal strip is placed in front of the quarter-wave transformer or dielectric piece. The essential property of the structure is that it utilizes the quarter-wave transformer effect achie¬ ved by using a high dielectric constant. Also, making use of the resonances created in the quarter-wave thick plate as a phenomenon improving the bandwidth is a significant improvement with respect to the German specification referred to.
The invention is not limited to the applica- tion examples presented above, but many variations are possible within the scope of the inventive idea de¬ fined by the claims.

Claims

1. Microstrip-to-waveguide transition in the micro and/or millimetre wavelength range, said transi¬ tion comprising a waveguide (1), a microstrip (3) pla- ced at one end of the waveguide, and a ground plane (4) with a coupling iris (5) between the microstrip and the waveguide, characterized in that the transition is provided with a resonator (6) consisting of dielectric material and placed below the coupling iris (5) in the waveguide (1) for the coupling of po¬ wer via the coupling iris to the resonator and further to the waveguide.
2. Microstrip-to-waveguide transition as de¬ fined in claim 1, characterized in that the resonator (6) is implemented as an impedance transformer, prefe¬ rably a quarter-wave transformer, the resonator having a thickness (d) of about λ/6 - λ/3, preferably about λ/4 in the longitudinal direction of the waveguide (1), where λ corresponds to the wavelength at the ope- rating frequency in the dielectric material.
3. Microstrip-to-waveguide transition as de¬ fined in claim 1 or 2, characterized in that the reso¬ nator (6) extends to the ground plane (4).
4. Microstrip-to-waveguide transition as de- fined in any one of claims 1 - 3, characterized in that the resonator's dielectric constant εr is about 2 - 15, advantageously about 6 - 10 and preferably about 7.5.
5. Microstrip-to-waveguide transition as de- fined in any one of claims 1 - 4, characterized in that the size of the coupling iris (5) is so chosen that the resonant frequency of the coupling iris is below the operating frequency of the transition.
6. Microstrip-to-waveguide transition as de- fined in any one of claims 1 - 5, characterized in that the resonator comprises a metal strip (7) placed on the opposite side of the resonator (6) relative to the coupling iris (5) .
7. Microstrip-to-waveguide transition as de¬ fined in any one of claims 1 - 6, characterized in that the ground plane (4) with the coupling iris (5) is comprised in the microstrip (3) .
8. Microstrip-to-waveguide transition as de¬ fined in any one of claims 1 - 8, characterized in that it comprises at least two parasitic elements (8) placed on the surface of the resonator (6) in parallel with the metal strip (7) , the resonant frequency of said parasitic elements being tuned to a frequency differing from that of the metal strip.
9. Microstrip-to-waveguide transition as de- fined in any one of claims 1 - 9, characterized in that the waveguide (1) has a rectangular, round, po¬ lygonal or elliptic shape in cross-section.
10. Microstrip-to-waveguide transition as de¬ fined in any one of claims 1 - 10, characterized in that the shape of the cross-section of the coupling iris (5) and/or metal strip (7) corresponds to the cross-sectional shape of the waveguide (1) .
PCT/FI1996/000130 1995-03-06 1996-03-04 Microstrip-to-waveguide transition WO1996027913A1 (en)

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EP0874415A2 (en) * 1997-04-25 1998-10-28 Kyocera Corporation High-frequency package
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EP1052726A1 (en) * 1999-05-05 2000-11-15 Interuniversitair Micro-Elektronica Centrum Vzw Slot coupled micromachined waveguide antenna
EP1063723A1 (en) * 1999-06-22 2000-12-27 Interuniversitair Micro-Elektronica Centrum Vzw Slot coupled micromachined waveguide antenna
US7102458B2 (en) 2002-05-23 2006-09-05 Kyocera Corporation High-frequency line-waveguide converter having the HF line terminated within an opening portion
US7276987B2 (en) 2002-10-29 2007-10-02 Kyocera Corporation High frequency line-to-waveguide converter and high frequency package
WO2011078061A1 (en) * 2009-12-22 2011-06-30 京セラ株式会社 Line conversion structure and antenna using same
JP2016072660A (en) * 2014-09-26 2016-05-09 古河電気工業株式会社 Planar transmission line/waveguide conversion device
US10826165B1 (en) 2019-07-19 2020-11-03 Eagle Technology, Llc Satellite system having radio frequency assembly with signal coupling pin and associated methods

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US4733202A (en) * 1985-10-25 1988-03-22 Thomson-Csf Coupling device between an electromagnetic surface wave line and an external microstrip line
US5202648A (en) * 1991-12-09 1993-04-13 The Boeing Company Hermetic waveguide-to-microstrip transition module
DE4208058A1 (en) * 1992-03-13 1993-09-16 Deutsche Aerospace Waveguide to microstrip transition for micro and millimetre range - has planar substrate with microstrip line and coupling slot to waveguide formed on separate planar layer.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733202A (en) * 1985-10-25 1988-03-22 Thomson-Csf Coupling device between an electromagnetic surface wave line and an external microstrip line
US5202648A (en) * 1991-12-09 1993-04-13 The Boeing Company Hermetic waveguide-to-microstrip transition module
DE4208058A1 (en) * 1992-03-13 1993-09-16 Deutsche Aerospace Waveguide to microstrip transition for micro and millimetre range - has planar substrate with microstrip line and coupling slot to waveguide formed on separate planar layer.
DE4329570A1 (en) * 1992-03-13 1995-03-09 Deutsche Aerospace Waveguide/microstrip line junction

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EP0874415A2 (en) * 1997-04-25 1998-10-28 Kyocera Corporation High-frequency package
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US6239669B1 (en) 1997-04-25 2001-05-29 Kyocera Corporation High frequency package
JPH11112209A (en) * 1997-09-30 1999-04-23 Kyocera Corp High frequency package and its connection structure
EP1052726A1 (en) * 1999-05-05 2000-11-15 Interuniversitair Micro-Elektronica Centrum Vzw Slot coupled micromachined waveguide antenna
EP1063723A1 (en) * 1999-06-22 2000-12-27 Interuniversitair Micro-Elektronica Centrum Vzw Slot coupled micromachined waveguide antenna
US7102458B2 (en) 2002-05-23 2006-09-05 Kyocera Corporation High-frequency line-waveguide converter having the HF line terminated within an opening portion
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US7276987B2 (en) 2002-10-29 2007-10-02 Kyocera Corporation High frequency line-to-waveguide converter and high frequency package
US7522014B2 (en) 2002-10-29 2009-04-21 Kyocera Corporation High frequency line-to-waveguide converter and high frequency package
DE10350346B4 (en) * 2002-10-29 2012-12-20 Kyocera Corp. High Frequency Line Waveguide Converter and High Frequency Package
WO2011078061A1 (en) * 2009-12-22 2011-06-30 京セラ株式会社 Line conversion structure and antenna using same
JP5509220B2 (en) * 2009-12-22 2014-06-04 京セラ株式会社 Line conversion structure and antenna using the same
JP2016072660A (en) * 2014-09-26 2016-05-09 古河電気工業株式会社 Planar transmission line/waveguide conversion device
US10826165B1 (en) 2019-07-19 2020-11-03 Eagle Technology, Llc Satellite system having radio frequency assembly with signal coupling pin and associated methods

Also Published As

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FI951029A0 (en) 1995-03-06
FI951029A (en) 1996-09-07
FI98105C (en) 1997-04-10
FI98105B (en) 1996-12-31

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