WO1996013848A1 - Dispositif d'affichage a emetteur de champ - Google Patents

Dispositif d'affichage a emetteur de champ Download PDF

Info

Publication number
WO1996013848A1
WO1996013848A1 PCT/US1995/013264 US9513264W WO9613848A1 WO 1996013848 A1 WO1996013848 A1 WO 1996013848A1 US 9513264 W US9513264 W US 9513264W WO 9613848 A1 WO9613848 A1 WO 9613848A1
Authority
WO
WIPO (PCT)
Prior art keywords
display
emitter
pixels
pixel
cathode
Prior art date
Application number
PCT/US1995/013264
Other languages
English (en)
Other versions
WO1996013848A9 (fr
Inventor
Akintunde I. Akinwande
Original Assignee
Honeywell Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc. filed Critical Honeywell Inc.
Priority to JP8514623A priority Critical patent/JPH10508147A/ja
Priority to DE69522465T priority patent/DE69522465T2/de
Priority to EP95938760A priority patent/EP0789930B1/fr
Publication of WO1996013848A1 publication Critical patent/WO1996013848A1/fr
Publication of WO1996013848A9 publication Critical patent/WO1996013848A9/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members

Definitions

  • the present invention pertains to displays, and particularly to avionics displays. More particularly, the invention pertains to a flat panel display having high resolution and brightness with low power consumption.
  • the cathode ray tube has a high luminous efficiency, superior contrast ratios and excellent viewing angles.
  • two deficiencies of the CRT are the bulk of the electron gun and large power usage by the deflection amplifiers.
  • Two approaches in the development involved first, folding the electron gun around to be in parallel with the tube face; and second, producing an electron beam for each pixel by means of an areal cathode and a grid system. Of these approaches, the first one was implemented in the SONY WATCHMAN and the second one was used in a vacuum fluorescent display (VFD) of ISE.
  • CFEA cone field emitter array
  • a device is needed that retains the advantages of cathodluminescence such as high brightness, high luminous efficiency and good angular viewability, but has the features of compact thinness, random addressability and low power consumption.
  • the present invention provides all of the above-mentioned features desired in a display. It is a thin-film-edge field emitter array (FEA) display (or lamp) that has a two- dimensional array of matrix addressable thin-film-edge field emitters as electron sources for a cathodoluminescent screen.
  • FAA thin-film-edge field emitter array
  • FEA displays are that the radius of curvature of the emitter is determined by film deposition resulting in better uniformity and higher current densities, the series resistor for current bias is easier to implement, the fabrication process is based on integrated circuit (IC) and micromachining processes that lead to lower cost manufacturing, emitter burnout is eliminated by using an on-chip focusing electrode which provides for higher reliability and yield, and higher luminous efficiency results because of the use of high voltage phosphors.
  • IC integrated circuit
  • the edge emitter does not suffer from the deleterious effects of field forming and particle induced desorbtion emitter erosion.
  • the device can use high-voltage phosphors without any reliability problems. This allows the use of more efficient phosphors and consequently lower power operation for the same brightness and permits high-resolution proximity focusing. High-voltage phosphors have long lifetimes because they require less current, and high luminous efficiency phosphors lead to low power consumption.
  • Figure 1 shows a basic comb-tooth edge field emitter.
  • Figures 2a and 2b illustrate emitter edges.
  • Figure 3 shows a perspective of an emitter.
  • Figures 4 and 5 show views of another kind of emitter.
  • Figure 6 is a side cutaway view of an emitter.
  • Figure 7 is a cross-section view from figure 6.
  • Figures 8a-c show three comb structures of an emitter.
  • Figure 9 reveals an array layout of emitters.
  • Figure 10 is a cross-section of a thin-film-edge emitter used in a flat panel display.
  • Figure 11 shows the place of the field emitter in a display.
  • Figure 12 is a portion of the structure of a display having field emitters.
  • Figure 13 is a perspective view of a field emitter microstructure.
  • Figure 14 is a flow chart for fabrication of a field emitter array display.
  • Figure 15 illustrates a laminated emitter structure.
  • Figure 16 shows a dual control electrode emitter structure for a display.
  • Figure 17 shows a single control electrode emitter structure for a display.
  • Figure 18 reveals a planar thin film edge field emitter for a display, having the phosphor layer on the same substrate as the field emitter.
  • FIG. 1 shows the basic comb-tooth edge field emitter 20.
  • Emitter 20 has a lead-in conductor 1 , is in electrical connection with an outside voltage source, and is in contact with an emitter structure 3, through a resistive element 5, and a conductive element 6 at electrical contact 2.
  • Lead-in conductor 1 preferably physically contacts only resistive element 5.
  • Emitter edge 4 of emitter structure 3 is segmented into a plurality of comb-like elements e, ... e n .
  • the segmentation of the emitter edge serves to isolate burn-out problems. Localizing the edge length will prevent spreading of the burn-out and confine the problem to its originating comb element.
  • a resistive film 5, typically but not limited to tantalum nitride or a polysilicon, is formed through thin film construction techniques to be in contact with emitter structure 3 so that the resistance applied is in series with emitter edge 4.
  • the resistive film serves to limit excessive direct current (D.C.) emission currents to the emitter edge from sharp points or uncontrollable discharges from stray capacitance.
  • D.C. direct current
  • resistive film 5, insulator 1 1, and conductive film 6 serve as a capacitor which provides a high frequency bypass for alternating current (A.C.) through lead-in conductor 1.
  • the capacitor enables amplification of high frequency microwave signals as if the current limiting load line were due to a very small resistor, thus greatly increasing the gain of the amplifier. This is so because the D.C. current is limited in its ability to damage the emitter by the resistor; and because the bypass capacitor provides another way for the high frequency signal to pass the emitter.
  • Figures 2a and 2b illustrate two emitter edges 61 and 62, respectively, with arrows suggesting electron flow at the edge of each.
  • the ridged edge 62 type is presently preferred because the corners of edge 61 are likely to cause concentration of electron emission and begin failure.
  • FIG 3 shows a perspective view of the emitter illustrated in figure 1.
  • the structure shown at item 7 serves as a support layer. Also visible in this view is insulating substrate layer 12, and upper and lower control electrodes 8 and 9.
  • a control electrode acts as a lateral gate which controls the current flow between anode 10 and electron-emitting cathode 4.
  • Figures 4 and 5 show plan and perspective views, respectively, of a second kind of emitter.
  • the entire emitter structure is segmented into comb-like elements 4.
  • Each comb-like element e, ... e n has an individual resistor element 5 connecting it to conductor contact 2.
  • the arrangement of the second configuration enables a larger total current to be drawn without burning out the individual comb elements.
  • the first configuration shown in figures 1 and 3 enables a lesser amount of total current to be drawn than the second configuration (assuming the two were of the same size), but has a more effective capacitive coupling because of the larger area of the resistive film.
  • Figure 6 shows a side cutaway view which could represent either one of the two configurations of the emitter. Also shown in figure 6 is dielectric material 11, between conductive element 6 and resistive element 5, as well as insulating substrate 12 upon which the emitter is constructed.
  • Figure 7 is a detailed side view taken at line 7-7 of figure 6. From the top, there is a support layer 15 (preferably nitride, though other well known support layers with similar electrical characteristics could be used).
  • Upper control electrode 8 (preferably TiW, around 2500 angstroms, though other metals or conductive materials could be used), an upper sacrificed layer 16 (preferably SiO* ; about 3000 angstroms, although other supporting materials of similar electrical qualities could be substituted); the emitter surrounded by two support layers, i.e., the support layers are nitride 1 la and 1 1 b of about 2000 angstroms in thickness and the emitter e, a 300 angstrom layer of TiW, although substitute materials may be used as in the similar above layers).
  • the support layers are nitride 1 la and 1 1 b of about 2000 angstroms in thickness and the emitter e, a 300 angstrom layer of TiW, although substitute materials may be used as in the similar above layers.
  • Figures 8a, 8b and 8c illustrate three alternatives for comb structure 4 combined with resistor elements 2.
  • Figure 8d is a side cross-section view of element e of the configuration shown in figure 8b.
  • Figure 9 shows a piece 40 of an array employing emitters 41, 42, 43, and 44, and resistor elements 2a, 2b and 2c.
  • Control electrode wires 50, 52 and 54 (metalization or other current carrying structures) and lines 63 and 65 are connected at junctions 51 and 53, respectively, to turn on emitter 41.
  • Figure 10 is a diagram that reveals further details of a thin-film-edge emitter 70 that is used in an FEA flat panel display.
  • a nitride layer 72 of about 2500 angstroms.
  • Formed on layer 72 is a gate electrode 73 which is of about 1000 angstroms thick of TiW.
  • Formed on layer 72 is a 3500 angstrom layer 74 of oxide.
  • Found on oxide layer 74 is a 1500 angstrom layer 75 of nitride which is used to support 200 to 300 angstroms of TiW as emitter edge layer 76.
  • Nitride layers 75 and 77 provide structural support for emitter layer 76.
  • Formed on layer 77 is a 3500 angstrom layer 79 of silicon dioxide.
  • Gate electrode 80 of about 2500 angstroms of TiW is formed on a portion of oxide layer 79.
  • a 2500 angstrom layer 81 is formed on gate electrode 80 and oxide layer 79.
  • gate electrodes 73 and 80, and nitride layers 72, 75, 77 and 81 are approximately aligned with the emitting edge of emitter edge layer 76.
  • a via is etched in layers 77, 79 and 81 for forming emitter control via resistive metal 78, which is effectively a resistor in connected in series with emitter edge 76.
  • Metal 78 is TaN.
  • Oxide layers 74 and 79 are etched back about 0.5 micron from the emitting edge of emitter edge layer 76.
  • nitride layer 82 of about 2500 angstroms that is apart from the emitter edge wafer 70.
  • anode 83 having about 0.5 micron layer of TiW.
  • the metal of items 73, 76, 80 and 83 may be other than TiW but needs to have a similar work function so as to prevent electrochemical reactions that would occur between such items composed of different metals.
  • Anode 83 functions as a focusing electrode for the electrons emitted from emitter edge 76.
  • Anode 83 is adjustable in distance about 1.5 to 4 microns from edge
  • Emitters 70 may be formed as a comb tooth emitter having a plurality of teeth as assemblies 20 and 21 shown in figures 3 and 5, respectively.
  • the number of teeth of the emitter is not critical but a preferred number for a display may be four as field emitter 84 of figure 11 has.
  • Each emitter tooth has a width 85 of about 4 microns wide.
  • a two dimensional array of pixels 88 compose a matrixed addressable pixel array 90, having a dimension 91 determined by resolution and pixel size.
  • the numbers of emitters 84 in a pixel 88 and of pixels 88 in array 90 are a matter of design choice.
  • Figure 12 shows a portion of the structure of display 100, having field emitters 84 situated on substrate 71.
  • Column address conducting strip 92 and row address conducting strip 93 select the particular pixel 88 to be turned on to emit electrons which go to an out-of-plane screen 97.
  • Strip 92 is connected to the gate of field emitter 84 and strip 93 is connected to the resistor/emitter of field emitter 84.
  • Screen 94 is composed of a glass plate or substrate 95.
  • a phosphor layer 96 is formed on glass plate or substrate 95 and a tin aluminum (Al) layer 97, transparent to beams 98 of electrons but conductive of electric signals, is formed on phosphor layer 96.
  • Layer 97 is connected to a positive terminal of a voltage source that has the other negative terminal connected to the respective emitters 84. Electron emissions 98 impinge phosphor layer 96 as they go through anode 97. As phosphor layer 96 is impinged by emitted electrons 98, layer 96 emits photons in the area which is impinged by emissions or electrons 98. resulting in a visible indication of light to an observer.
  • layer 96 may be an indium tin oxide (ITO) film, which is conductive of electric signals but transparent to light, formed on glass plate or substrate 95; and layer 97 may be phosphor formed on layer 96 which is connected to a positive terminal of a voltage source that has the other negative terminal connected to the respective emitters 84.
  • Film or layer 96 is the anode for collecting electron emissions 98 of emitters 84. Electron emissions 98 impinge phosphor layer 97 as they go to anode 96. As phosphor layer 97 is impinged by emitted electrons 98, layer 97 emits photons in the area which is impinged by emissions or electrons 98, resulting in a visible indication of light to an observer.
  • On glass plate is coated an antireflective film 111 for enhanced viewing.
  • Screen 94 is supported parallel to substrate 71 by dielectric spacer 99 at a distance of between 200 and 10,000 microns between screen 94 and substrate 71.
  • FIG 13 is a configuration of a vacuum microelectronic field emitter microstructure 101 that may be used in arrays for radio frequency (RF) amplification.
  • a thin-film-edge emitter 102 is sandwiched between control electrodes 103 and 104.
  • Electrons are emitted laterally from emitter 102 and are collected at anode 105 a few microns away from emitter 102.
  • Structure 101 is fabricated with a process which combines silicon integrated circuit (IC) patterning techniques with surface micromachining, as is outlined as a simplified process in figure 14.
  • Field emitter structure 84 of display 100 in figure 12 is similar to structure 101 in figure 13.
  • anode 105 of structure 101 would be a focusing electrode.
  • Emitter edge 102 of structure 101 is split into comb elements 106 and each emitter comb element or finger 106 is connected individually to a current equalization resistive layer or element 107. Resistive element 107 prevents electromigration and burnout of emitting edge 102 by limiting the D.C. current in each finger 106.
  • Thin-film edge emitter structure 102 having comb resistors 107 for fingers 106 permits individual bias for each emitter thereby preventing a few shorts from pulling the line voltage down. Lateral series resistor 107 is not sensitive to slight fabrication process variations. Thin- film-edge emitter 102 has low intrinsic capacitance. Series resistor 107 of fingers can be bypassed at the appropriate frequencies by a bypass capacitor 108 to allow fast emitter 101 response times.
  • Emitter edge 102 fingers 106 need to be thin (i.e., ⁇ 200 angstroms) to attain the high electric fields for low-voltage emission.
  • the ideal emitter structure is a tapered lateral emitter having a very thin emitting edge, which is difficult to achieve in a thin- film-edge emitter form.
  • Figure 15 shows a compromise laminated emitter structure 109 that combines the advantages of the thin-film-edge sharpness with the current carrying capability of a thick film.
  • the operating gate voltage is kept reasonably low by using a low workfunction emitter composed of LaB6, CeB6, C5-implanted Wl or Cs-implanted TiW.
  • Electrodes 113 and 1 14 are electron emission 1 16 intensity controlling gates. Electrodes 1 13 and 1 14 are each spaced at 0.5 microns apart from emitter 112.
  • the anode of a vacuum transistor is used as a focusing electrode 115, situated on substrate 118, which is biased between a minus 20 and minus 50 volts, typically at a minus 35 volts, with respect to emitter 1 12.
  • Electrode 115 is about 4 microns from emitter 112.
  • Emitter 112 is set at zero volts and control electrodes 113 and 114 are set at about a plus 100 volts.
  • the negative bias on electrode 115 turn electrons 116 form a lateral direction to a vertical direction toward screen 117.
  • Screen 117 has a glass plate 119 with an ITO layer 120 formed on it. ITO layer 120 is connected as an anode or collector for electrons 1 16.
  • ITO layer 120 Formed on ITO layer 120 is a layer of phosphor 121.
  • Phosphor layer 121 is about 2,500 microns in distance from parallel substrate 118.
  • Collector 120 is biased at a positive 20,000 volts (i.e., at a field of 8 volts per micron).
  • the electron energy spread of emission 116 is about 0.1 electron volt (eV) and the emission angle is ⁇ 45 degrees.
  • Configuration 122 has the same items, physical dimensions, voltage requirements, and operational characteristics as configuration 110 of figure 16. The only distinction is that there is no lower electrode or gate 1 14 in configuration 122. The position and height of focus electrode 115 has an effect on the collimation of electrons 116. The best position for electrode 1 15 is below emitter 1 12 for configuration 110 and is at the same level as upper control gate 113 for configuration 122. The electrons seem to be better collimated in configuration 122. Both configurations 110 and 122 are little susceptible to emitter 1 12 erosion by energetic particles desorbed by electron 116 bombardment of phosphor screen 121.
  • Phosphor layer 121 acts as the anode and may be deposited on the glass. This may be followed by a thin layer 120 of Al which is a conducting layer and also acts as a reflector. In operation, the emitted electrons travel to anode 121, causing luminous emission when they impinge on phosphor screen 121. High-voltage phosphors are much better than low-voltage phosphors because the brightness is proportional to the accelerating voltage and the current density, and phosphor lifetime is inversely proportional to the deposited charge density. The following table compares the characteristics of low- and high- voltage cathodoluminescent phosphors.
  • the phosphor screen is part of individual edge emitter array 84.
  • Array 100 may emit one of several colors, depending on the kind of phosphor 97 that screen 94 has.
  • the above table gives examples of materials used for attaining red, green and blue light emitting phosphors.
  • Pixel 88 of an array of field emitters 84, along with a phosphor screen 94 like that of figure 12, may be designed to emit red, green or blue light, even light of another color with the appropriate phosphor.
  • red, green and blue pixels can be placed in matrixed addressable pixel array 90, for obtaining a full color field emitter display.
  • the pixel layout for instance, may be that each pixel of a given color is bordered by pixels of the other colors.
  • color pixel formats for three and four color matrix arrays, are set forth in the related art, such as a United States patent, number 4,800,375, by Louis Silverstein et al., issued January 24, 1989, and entitled “Four Color Repetitive Sequence Matrix Array for Flat Panel Displays,” which is hereby incorporated by reference in this description.
  • the luminous exitance M is given by
  • the phosphor lifetime t is determined by the total charge density QL deposited
  • a third display field emitter structure is an on-chip phosphor screen configuration 124 in figure 18.
  • Configuration 124 is a derivative of configuration 110.
  • a trench 125 between 1.0 to 2.5 microns deep, is etched (with micromachining) in substrate 1 18 in the area of former focusing electrode 1 15.
  • An anode 123 is deposited in trench 125.
  • a phosphor layer 127 is defined by e- beam evaporation and lift-off. Electrons 126 go from emitter 1 12 towards phosphor screen 127 and anode 123, to emit photons for viewing. Laterally, anode 123 is between 2 to 10 microns from the nearest edge of emitter 1 12. The anode 123 voltage is equal to or greater than positive 500 volts relative to emitter 1 12 which is at a zero voltage. Upper control gate 113 and lower control gate 114 are at 100 volts and situated similarly relative to emitter 112 as in configuration 1 10 of figure 16.

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

L'invention concerne un dispositif d'affichage comportant des éléments d'images qui constituent des ensembles d'émetteurs de champ à bords en couches minces. Le dispositif d'affichage peut fournir des images monochromes ou couleurs d'une grande luminosité et d'un fort contraste, avec une bonne capacité de visualisation en grand champ, dans un boîtier compact et plat. La puissance absorbée est très faible, ce qui donne une bonne efficacité lumineuse. Ce dispositif d'affichage peut être aisément fabriqué de manière peu onéreuse en utilisant des procédés à circuits intégrés et d'usinage connus dans l'art.
PCT/US1995/013264 1994-10-31 1995-10-20 Dispositif d'affichage a emetteur de champ WO1996013848A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8514623A JPH10508147A (ja) 1994-10-31 1995-10-20 電界エミッタ・ディスプレイ
DE69522465T DE69522465T2 (de) 1994-10-31 1995-10-20 Feldemissionsanzeigevorrichtung
EP95938760A EP0789930B1 (fr) 1994-10-31 1995-10-20 Dispositif d'affichage a emetteur de champ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33185094A 1994-10-31 1994-10-31
US08/331,850 1994-10-31

Publications (2)

Publication Number Publication Date
WO1996013848A1 true WO1996013848A1 (fr) 1996-05-09
WO1996013848A9 WO1996013848A9 (fr) 1996-07-04

Family

ID=23295636

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/013264 WO1996013848A1 (fr) 1994-10-31 1995-10-20 Dispositif d'affichage a emetteur de champ

Country Status (5)

Country Link
EP (1) EP0789930B1 (fr)
JP (1) JPH10508147A (fr)
CA (1) CA2201473A1 (fr)
DE (1) DE69522465T2 (fr)
WO (1) WO1996013848A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991005363A1 (fr) * 1989-09-29 1991-04-18 Motorola, Inc. Ecran plat utilisant des systemes d'emission par effet de champ
EP0461990A1 (fr) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Source d'électrons à cathodes émissives à micropointes
EP0501785A2 (fr) * 1991-03-01 1992-09-02 Raytheon Company Structure pour émettre des électrons et procédé de fabrication
DE4207003A1 (de) * 1991-03-06 1992-09-10 Sony Corp Feldemissionsdisplay
EP0535953A2 (fr) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Dispositif électronique du type à emission de champ
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
WO1994017546A1 (fr) * 1993-01-19 1994-08-04 Leonid Danilovich Karpov Emetteur a effet de champ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991005363A1 (fr) * 1989-09-29 1991-04-18 Motorola, Inc. Ecran plat utilisant des systemes d'emission par effet de champ
US5214347A (en) * 1990-06-08 1993-05-25 The United States Of America As Represented By The Secretary Of The Navy Layered thin-edged field-emitter device
EP0461990A1 (fr) * 1990-06-13 1991-12-18 Commissariat A L'energie Atomique Source d'électrons à cathodes émissives à micropointes
EP0501785A2 (fr) * 1991-03-01 1992-09-02 Raytheon Company Structure pour émettre des électrons et procédé de fabrication
DE4207003A1 (de) * 1991-03-06 1992-09-10 Sony Corp Feldemissionsdisplay
EP0535953A2 (fr) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Dispositif électronique du type à emission de champ
WO1994017546A1 (fr) * 1993-01-19 1994-08-04 Leonid Danilovich Karpov Emetteur a effet de champ
EP0681311A1 (fr) * 1993-01-19 1995-11-08 KARPOV, Leonid Danilovich Emetteur a effet de champ

Also Published As

Publication number Publication date
DE69522465D1 (de) 2001-10-04
CA2201473A1 (fr) 1996-05-09
JPH10508147A (ja) 1998-08-04
EP0789930B1 (fr) 2001-08-29
DE69522465T2 (de) 2002-05-02
EP0789930A1 (fr) 1997-08-20

Similar Documents

Publication Publication Date Title
EP0789856B1 (fr) Affichage a cristaux liquides a emetteurs de champ
US6147456A (en) Field emission display with amplification layer
US5729244A (en) Field emission device with microchannel gain element
US6011356A (en) Flat surface emitter for use in field emission display devices
JPH08227652A (ja) 電子放出装置およびその製造方法
US6215243B1 (en) Radioactive cathode emitter for use in field emission display devices
US5955833A (en) Field emission display devices
US6509677B2 (en) Focusing electrode and method for field emission displays
US5920151A (en) Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor
US5945777A (en) Surface conduction emitters for use in field emission display devices
US6323594B1 (en) Electron amplification channel structure for use in field emission display devices
US6008577A (en) Flat panel display with magnetic focusing layer
US6255771B1 (en) Flashover control structure for field emitter displays and method of making thereof
US6843697B2 (en) Black matrix for flat panel field emission displays
US20050168131A1 (en) Hybrid active matrix thin-film transistor display
EP0789930B1 (fr) Dispositif d'affichage a emetteur de champ
WO1996013848A9 (fr) Dispositif d'affichage a emetteur de champ
US6215242B1 (en) Field emission display device having a photon-generated electron emitter
KR100284539B1 (ko) 평면 전계 방출형 평판 표시장치
Johnson et al. Characterization of lateral thin-film-edge field emitter arrays
US6693386B2 (en) Reflective edge field-emission pixel and associated display
KR100252068B1 (ko) 전계방출소자 및 이를 이용한 화상표시소자
US5886461A (en) Transparent conductor for field emission displays
JP2795184B2 (ja) 表示装置
KR100532999B1 (ko) 전계 차폐판을 구비한 탄소 나노튜브 전계방출소자

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CA JP

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

COP Corrected version of pamphlet

Free format text: PAGE 11,DESCRIPTION,AND PAGES 1/14-14/14,DRAWINGS,REPLACED BY NEW PAGES BEARING THE SAME NUMBER;DUETO LATE TRANSMITTAL BY THE RECEIVING OFFICE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
ENP Entry into the national phase

Ref document number: 2201473

Country of ref document: CA

Ref country code: CA

Ref document number: 2201473

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1995938760

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1995938760

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1995938760

Country of ref document: EP