WO1994015707A3 - Vorrichtung zum gleichzeitigen einlassen wenigstens eines prozessgases in eine mehrzahl von reaktionskammern - Google Patents
Vorrichtung zum gleichzeitigen einlassen wenigstens eines prozessgases in eine mehrzahl von reaktionskammern Download PDFInfo
- Publication number
- WO1994015707A3 WO1994015707A3 PCT/DE1994/000032 DE9400032W WO9415707A3 WO 1994015707 A3 WO1994015707 A3 WO 1994015707A3 DE 9400032 W DE9400032 W DE 9400032W WO 9415707 A3 WO9415707 A3 WO 9415707A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reaction chambers
- process gas
- section
- cross
- mfc
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/008—Feed or outlet control devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Abstract
Beschrieben wird eine Vorrichtung zum gleichzeitigen Einlassen eines Prozeßgases in eine Mehrzahl von Reaktionskammern mit einer Prozeßgas-Versorgungseinrichtung, einem dem Vorratsbehälter (1) nachgeschaltetem Gas-Massenflussregler (MFC), wenigstens einem Verteilerrohr (2) mit großem Querschnitt, das eine Einlaßleitung, die mit dem Ausgangsanschluß des Massenflußreglers (MFC) verbunden ist, und eine Mehrzahl von Auslaßleitungen ausweist, deren Zahl der Zahl von Reaktionskammern entspricht, und deren Querschnitt klein verglichen mit dem Querschnitt des Verteilerrohrs ist, jeweils einem Regelventil (3) in jeder Auslaßleitung, dessen Ausgangsanschluß mit der jeweiligen Prozeßkammer verbunden ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEP4300989.1 | 1993-01-15 | ||
DE4300989 | 1993-01-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1994015707A2 WO1994015707A2 (de) | 1994-07-21 |
WO1994015707A3 true WO1994015707A3 (de) | 1994-09-01 |
Family
ID=6478289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1994/000032 WO1994015707A2 (de) | 1993-01-15 | 1994-01-17 | Vorrichtung zum gleichzeitigen einlassen wenigstens eines prozessgases in eine mehrzahl von reaktionskammern |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE4401156A1 (de) |
WO (1) | WO1994015707A2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH687258A5 (de) * | 1993-04-22 | 1996-10-31 | Balzers Hochvakuum | Gaseinlassanordnung. |
DE19501733C1 (de) * | 1995-01-20 | 1996-05-15 | Heraeus Quarzglas | Vorrichtung zur Aufteilung eines Gasstromes in mehrere Teilgasströme |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980325A (ja) * | 1982-10-29 | 1984-05-09 | Fujitsu Ltd | 反応ガス分配方法 |
JPS6279837A (ja) * | 1985-10-04 | 1987-04-13 | Canon Inc | ガス混合装置 |
US4917136A (en) * | 1988-05-08 | 1990-04-17 | Tadahiro Ohmi | Process gas supply piping system |
US4971100A (en) * | 1986-07-03 | 1990-11-20 | Tadahiro Ohmi | System for supplying ultrahigh purity gas |
-
1994
- 1994-01-17 WO PCT/DE1994/000032 patent/WO1994015707A2/de active Application Filing
- 1994-01-17 DE DE4401156A patent/DE4401156A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980325A (ja) * | 1982-10-29 | 1984-05-09 | Fujitsu Ltd | 反応ガス分配方法 |
JPS6279837A (ja) * | 1985-10-04 | 1987-04-13 | Canon Inc | ガス混合装置 |
US4971100A (en) * | 1986-07-03 | 1990-11-20 | Tadahiro Ohmi | System for supplying ultrahigh purity gas |
US4917136A (en) * | 1988-05-08 | 1990-04-17 | Tadahiro Ohmi | Process gas supply piping system |
Non-Patent Citations (3)
Title |
---|
DATABASE WPI Section Ch Week 8425, Derwent World Patents Index; Class E11, AN 84-154751 * |
PATENT ABSTRACTS OF JAPAN vol. 11, no. 282 (C - 446) 11 September 1987 (1987-09-11) * |
PATENT ABSTRACTS OF JAPAN vol. 8, no. 184 (C - 239) 23 August 1984 (1984-08-23) * |
Also Published As
Publication number | Publication date |
---|---|
DE4401156A1 (de) | 1994-09-22 |
WO1994015707A2 (de) | 1994-07-21 |
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