WO1993014881A1 - Condensateur pelliculaire a base de polymere resistant mieux aux ruptures dielectriques - Google Patents

Condensateur pelliculaire a base de polymere resistant mieux aux ruptures dielectriques Download PDF

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Publication number
WO1993014881A1
WO1993014881A1 PCT/US1992/001573 US9201573W WO9314881A1 WO 1993014881 A1 WO1993014881 A1 WO 1993014881A1 US 9201573 W US9201573 W US 9201573W WO 9314881 A1 WO9314881 A1 WO 9314881A1
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
gas plasma
capacitor according
film
exposed
Prior art date
Application number
PCT/US1992/001573
Other languages
English (en)
Inventor
Michael Binder
Robert J. Mammone
Bernard Lavene
Original Assignee
The United States Of America Secretary Of The Army, The Pentagon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The United States Of America Secretary Of The Army, The Pentagon filed Critical The United States Of America Secretary Of The Army, The Pentagon
Publication of WO1993014881A1 publication Critical patent/WO1993014881A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2023/00—Use of polyalkenes or derivatives thereof as moulding material
    • B29K2023/10—Polymers of propylene
    • B29K2023/12—PP, i.e. polypropylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2027/00—Use of polyvinylhalogenides or derivatives thereof as moulding material
    • B29K2027/12—Use of polyvinylhalogenides or derivatives thereof as moulding material containing fluorine
    • B29K2027/16—PVDF, i.e. polyvinylidene fluoride
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2067/00—Use of polyesters or derivatives thereof, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2069/00—Use of PC, i.e. polycarbonates or derivatives thereof, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2007/00—Flat articles, e.g. films or sheets
    • B29L2007/008—Wide strips, e.g. films, webs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3406—Components, e.g. resistors

Definitions

  • This invention relates to capacitors, and in partic ⁇ ular to polymer based film capacitors with greatly increased overall breakdown strengths which enable the capacitor to be operated at higher voltages.
  • the maximum electrostatic energy density that can be stored in spirally wound film capacitors depends on the pro ⁇ duct of the total capacitance of the capacitor and the square of the maximum voltage that can be applied across the capaci ⁇ tor (its breakdown voltage).
  • Polymers with high resistivity, high permittivity, low dissipation factors and high electric dielectrics in wound film capacitors Since the capacitor industry is cost and performance driven, constantly increasing demands are made on materials to lower cost, and improve reli ⁇ ability and performance.
  • Polymer film capacitors have long been of interest because manufacturing technologies associated with extrusion or solution casting of polymer films can be readily combined with thin film metallization techniques to yield devices that are flexible, economical and that can be wound into very large capacitors.
  • Polymer films such as poly ⁇ carbonate, polypropylene and polyester have been the insulat ⁇ ing media of choice for fabrication of thin film electrostatic capacitors for operation in the kilovolt range.
  • the higher the operational voltage of a capacitor the greater the attainable energy storage capability because attainable energy densities of film capacitors increase as the square of the voltage appli ⁇ ed across the capacitor. If overall breakdown strengths of films can be increased, then capacitors can be operated at higher voltages thereby increasing the electrostatic energy densities of the capacitors.
  • the general object of this invention is to provide a capacitor with greatly increased dielectric breakdown strength.
  • a more particular object of the invention is to provide a fully constructed, spirally wound, polymer based film capacitor with increased dielectric breakdown strength.
  • a still further object of the invention is to provide such a capacitor that- is inexpensive and easy to manufacture.
  • FIG. 1 is an exaggerated cross-sectional illustration of a prior art capacitor roll section to which this invention is applicable.
  • FIG. 2 shows the DC breakdown voltages for polypropy ⁇ lene films of about 12 microns in thickness that are unexposed or have been exposed to low pressure, low temperature gas plas ⁇ mas of helium, oxygen, and 96%CF4_4%02 with a 90 percent confidence limit based on Weibull distribution.
  • FIG. 3 shows the DC breakdown voltages for polyvinyli- dene fluoride films of about 12 microns in thickness that are unexposed or have been briefly exposed to low pressure, low temperature gas plasmas of helium, oxygen, or 96%CF4/4%02 with a 90 percent confidence limit based on Weibull distribu ⁇ tion.
  • wound capacitors are con ⁇ structed by sandwiching a dielectric film 2 such as polycarbon ⁇ ate, polypropylene or polyester film between metal foil sheets 3 and 4 (as shown in Figure 1) and then winding this material around a thin mandrel to form the capacitor.
  • a dielectric film 2 such as polycarbon ⁇ ate, polypropylene or polyester film
  • metal foil sheets 3 and 4 as shown in Figure 1
  • the width of the metal foil is less than that of the dielectric polymer strip, so that a margin is created around each of the sides, thereby acting as an apron to prevent flashovers.
  • Spe ⁇ cific examples of wound capacitors are found in the following U.S. patents: U.S. Patent No.
  • any portion or all of a dielectric-foil based wound capacitor is exposed to a gas plasma.
  • the treatment of such a capacitor increases the dielectric breakdown voltage of the fully wound capacitor.
  • This treatment includes exposure of the resin material which forms the dielectric film; exposure of the dielectric film itself; exposure of the metal foil; exposure of the fully wound capacitor or any combination thereof to a gas plasma.
  • the exposure times are brief, for example, four minutes or less and the pressure in the exposure chamber is low, for example, 300 to 500 illitorr.
  • any type of gas plasma may be used for purposes of this inven ⁇ t i on, h as shown the best results.
  • Some other types of gas plasmas which may be used are 02 ⁇ He, 2 , NH3, CO2, and water vapor.
  • PQLMER RESINS Pellets of polypropylene (PP) resin (PD-064K), were milled in a Thomas-Wiley mill and exposed to 96% CF4/ % 0 2 gas plasma by evenly distributing a thin layer of ground-up resin on aluminum foil in a Branson/IPC (Fort Washington, PA) Model 4150 barrel plasma etcher at power levels of approximately 0.006 W/cm ⁇ for 4 minutes.
  • PP polypropylene
  • Treated and untreated polypropylene (PP) resins were sieved and portions of powder captured by 30 or 40 mesh screens were extruded on a screw type, Randcastle Microextruder under the following conditions: screw RPM: 50; die temperature: 450°F; barrel zone temperatures were 350° F for zone 1, 400° F for zone 2 and 450° F for zone 3.
  • Translucent PP films approximately 25 microns thick and 40 mm wide were made from both untreated PP resin and PP resin that had been exposed to 96% CF4/4% 0 plasma.
  • Breakdown voltages of the PP films were measured in air at room temperature by ramping the voltage from zero volts at 500 volts per second until breakdown occurs and the film could not hold off additional voltage. Table 1.
  • Table 1 lists dielectric properties of two kinds of PP film, PP film extruded from unexposed PP resin and PP film extruded from PP resin that had been briefly exposed to CF4 O2 plasma.
  • the dttta clearly shows that exposure of PP resin (prior to melt extrusion) to CF4/O2 plasma increased the sub ⁇ sequent breakdown voltages of formed films by about 25% with ⁇ out significantly affecting either the dielectric constant or dielectric loss.
  • gasses include O2, He, N 2 , NH3, CO2, and water vapor.
  • other percentages of CF4 and 0 2 can be used up to 100% CF4 or 100% 0 2 -
  • thermoplate resins as starting materials for the melt extru ⁇ sion method of this invention.
  • Two basic capacitor designs were used.
  • One design used 4 X .500 X 20 polycarbonate film while the other design used 2 X .500 X 40 polycarbonate film.
  • the first number (either 2 or 4) corre ⁇ sponds to how many layers of film per winding and the last number (either 20 or 40) correspondens to the guage thick ⁇ ness.)
  • the tin/lead foil was either baseline tin/lead foil or tin/lead foil taken from a tightly wound roll that had been briefly exposed to CF4/O2 gas plasma. Since elimination of the possibility of breakdown at the margins of the capacitors was desired, these capacitors were tested in a silicon oil environment rather than in air. Therefore, after these four capacitor types were wound, they were impregnated with silicon oil and hermetically sealed in silicon oil filled metal cans so that possible edge effects (air breakdown at the margins) were eliminated.
  • Capacitance and dissipation factors of these fully assembled capacitors are listed below.
  • Capacitors constructured with four-ply polycarbonate films and tin/lead foil that had been exposed to CF4/O2 plasma showed a 537% increase in V ⁇ over similar capacitors fabricated with unexposed tin/lead foil.
  • metal foils such as aluminum and copper as well as other metals may also be used as those skilled in the art would readily recognize.
  • capacitors in a spiral configuration were constructed by sandwiching thin films of either polycar ⁇ bonate, polypropylene or polyester between 5 micron thick tin foil and winding this around a thin mandrel.
  • Polycarbonate based capacitors were constructed with 5 micron thick polycar ⁇ bonate film; polyester based capacitors were constructed with 3.5 micron thick polyester film and polypropylene based capaci ⁇ tors were constructed with 4 micron thick polypropylene film.
  • a total of 36 capacitors of each type were constructed and divided into three sets. One set of 12 capacitors was used as the control group, the other two sets were exposed to either 0 2 or 96% CF 4 /4% 0 2 gas plasma in a Branson IPC Model 7104 plasma etcher.
  • Exposure times in the gas plasmas were four minutes. Power levels of the gas plasmas were approxi ⁇ mately 0.002 watts/cm 3 . All of these capacitors were then flattened and subjected to a 16 hours bake-out at 54°C. Breakdown voltage measurements were performed in air at room temperature.
  • Breakdown voltages of loosely wound polycarbonate, polyester and polypropylene bases capacitors are also listed in Table 2. Exposure of these capacitors to 96% CF 4 /4% 0 2 plasma produced more dramatic increases in breakdown voltages than did exposure to O2 gas plasma. For polycarbonate based capacitors, exposure to 96% CF / 4% 0 2 gas plasma for just four minutes doubled the breakdown voltages as compared with baseline capacitors. Polyester based capacitors showed a more modest 23% increase in breakdown voltages after exposure for four minutes to 96% CF 4 /4% 0 2 gas plasma while polypropy ⁇ lene based capacitors showed only a 4% improvement in breakdown voltage following exposure to CF4 /O2 plasma.
  • the present invention as enumerated in the various embodiments set forth above would most generally generally be used as a capacitor where large amounts of electrical current need to be stored or reserved. Such applications would include power plants, hand-held portable equipment, high efficiency, high density power supplies and the like.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

On augmente la résistance à la rupture diélectrique de condensateurs pelliculaires à base de polymère qui ont été moulés selon une configuration en spirale, en exposant rapidement la pellicule à base de polymère, la feuille métallique, et/ou le condensateur entièrement enroulé, à un plasma de gaz ayant une faible pression et une faible température.
PCT/US1992/001573 1992-02-03 1992-03-02 Condensateur pelliculaire a base de polymere resistant mieux aux ruptures dielectriques WO1993014881A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82919492A 1992-02-03 1992-02-03
US829,194 1992-02-03

Publications (1)

Publication Number Publication Date
WO1993014881A1 true WO1993014881A1 (fr) 1993-08-05

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Country Status (2)

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AU (1) AU2347092A (fr)
WO (1) WO1993014881A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8094431B2 (en) 2009-03-31 2012-01-10 General Electric Company Methods for improving the dielectric properties of a polymer, and related articles and devices

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054680A (en) * 1976-06-28 1977-10-18 General Electric Company Method of fabricating improved capacitors and transformers
US4153925A (en) * 1977-02-08 1979-05-08 Thomson-Csf Dielectric formed by a thin-layer polymer, a process for producing said layer and electrical capacitors comprising this dielectric
US4320437A (en) * 1980-06-23 1982-03-16 General Electric Company Capacitor with edge coated electrode
US4392178A (en) * 1980-10-16 1983-07-05 Pennwalt Corporation Apparatus for the rapid continuous corona poling of polymeric films
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
US4618507A (en) * 1985-05-07 1986-10-21 Westinghouse Electric Corp. Method of making a capacitor winding
US4645551A (en) * 1984-08-31 1987-02-24 Motorola, Inc. Method of making an octocoupler
US4685026A (en) * 1985-04-25 1987-08-04 Electronic Concepts, Inc. Capacitor forming and manufacturing method
US4711808A (en) * 1986-02-19 1987-12-08 Eastman Kodak Company Beta phase PVF2 film formed by casting it onto a specially prepared insulating support
US4719539A (en) * 1985-09-06 1988-01-12 Electronic Concepts Hermetically sealed capacitor
US4959748A (en) * 1988-03-30 1990-09-25 Matsushita Electric Industrial Co., Ltd. Film capacitor, method of and apparatus for manufacturing the same
US5093758A (en) * 1989-10-09 1992-03-03 Idemitsu Kosan Co., Ltd. Electrical insulation film and condenser

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4054680A (en) * 1976-06-28 1977-10-18 General Electric Company Method of fabricating improved capacitors and transformers
US4153925A (en) * 1977-02-08 1979-05-08 Thomson-Csf Dielectric formed by a thin-layer polymer, a process for producing said layer and electrical capacitors comprising this dielectric
US4320437A (en) * 1980-06-23 1982-03-16 General Electric Company Capacitor with edge coated electrode
US4392178A (en) * 1980-10-16 1983-07-05 Pennwalt Corporation Apparatus for the rapid continuous corona poling of polymeric films
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
US4645551A (en) * 1984-08-31 1987-02-24 Motorola, Inc. Method of making an octocoupler
US4685026A (en) * 1985-04-25 1987-08-04 Electronic Concepts, Inc. Capacitor forming and manufacturing method
US4618507A (en) * 1985-05-07 1986-10-21 Westinghouse Electric Corp. Method of making a capacitor winding
US4719539A (en) * 1985-09-06 1988-01-12 Electronic Concepts Hermetically sealed capacitor
US4711808A (en) * 1986-02-19 1987-12-08 Eastman Kodak Company Beta phase PVF2 film formed by casting it onto a specially prepared insulating support
US4959748A (en) * 1988-03-30 1990-09-25 Matsushita Electric Industrial Co., Ltd. Film capacitor, method of and apparatus for manufacturing the same
US5093758A (en) * 1989-10-09 1992-03-03 Idemitsu Kosan Co., Ltd. Electrical insulation film and condenser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8094431B2 (en) 2009-03-31 2012-01-10 General Electric Company Methods for improving the dielectric properties of a polymer, and related articles and devices

Also Published As

Publication number Publication date
AU2347092A (en) 1993-09-01

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