WO1992005834A1 - Household semiconductor-type beauty appliance - Google Patents
Household semiconductor-type beauty appliance Download PDFInfo
- Publication number
- WO1992005834A1 WO1992005834A1 PCT/KP1991/000001 KP9100001W WO9205834A1 WO 1992005834 A1 WO1992005834 A1 WO 1992005834A1 KP 9100001 W KP9100001 W KP 9100001W WO 9205834 A1 WO9205834 A1 WO 9205834A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- semiconductor
- type beauty
- beauty appliance
- power
- Prior art date
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Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N1/00—Electrotherapy; Circuits therefor
- A61N1/40—Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals
- A61N1/403—Applying electric fields by inductive or capacitive coupling ; Applying radio-frequency signals for thermotherapy, e.g. hyperthermia
Definitions
- This invention relates to an apparatus for removing abnormal discrepancies, such as macula etc. appearing on the surface of human body, on the face in particular, by using ultra-short wave discharge heating effect.
- vacuum tube operates at high anode voltage to easily realize oscillation and power amplification, it is bulky,heavy and needs high power consump tion.
- Present invention provides an apparatus using ultra-short wave discharge effect created by semiconductor device in order to reduce power consumption with same treating effect. Further, this apparatus provides the solution to making the appratus lighter and compact by employing semiconductor device.
- the figure shows a block diagram of semiconductor-type beauty appliance.
- the apparatus comprises four parts, i.e. a circuit of power source, filter circuit, oscillator circuit,power amplification and output circuit.
- A.C. 220 V or 110 V is supplied to primary winding of transformer and 40, 50 or 60 V output is obtained from the seconddry winding. This output voltage is changed over to adjust the voltage to be supplied to the circuit.
- Alternating current obtained at the secondary winding of transformer is changed over to direct current at a rectifying circuit.
- the pulsated d.c. voltage from rectifying circuit is smoothed at filter circuit and supplied to the circuit.
- the oscillator circuit comprises LC oscillstor circuit.
- LC oscillator circuit is proposed to satisfy the phase balancing condition and amplitude balancing condition, taking into consideration the influence of parasitic capacity and parasitic inductance and is made so as to set the most adequate operating point of ultra-short wave oscillation by inserting bias control device.
- Oscillator circuit was designed so as to supply input signal enough for next stage, the circuit of power amplification.
- the oscillator circuit is coupled with output stage by means of a high frequency transformer.
- This high frequecy transformer is designed to ensure matching between the output of oscillator circuit and input of power amplification stage.
- the last power amplification stage is composed so as to supply discharge voltage and current enough for scorching abnormal discrepancies on the surface of human skin.
- the ultra-short wave output should generate voltage and current enough for creating discharge heating effect.
- the minimum ultra-short wave voltage for creating discharge heating is 300 V or so and the voltage is limited within 700 V to avoid excess discharge.
- the invention proposes the frequency range of 40 MHz-50 MHz.
- ultra-short wave of over 100 MHz is set for discharge heating,more dielectric heating effect will appear than discharge heating effect. As a result, the heating will occur in deeper portion of the human body than in his surface,which will give a bad after-effect to human body. Considering this influence, 80-50 MHz of scorching frequency is set in this invention .
- the ultra-short wave signal from oscillator stage is largely amplified at the output stage.
- the transistor of output stage is made of ⁇ class, preferably C class.
- the load of transistor of output stage is LC resonance circuit.
- this resonance elements are pulled out, covered with co-axial cable, to scorching rod and the distance from resonance element to scorching needle is set minimum.
- the inductance L composing the above-mentioned resonance element is made in the form of a transformer, and the end of secondary winding of transformer is directly connected to scorching needle
- To the scorching needle is supplied such a voltage of as much volt as multiple of transformation ratio n (n > 1 ) of reson ance voltage U o of LC resonance circuit.
- the leading wire from the L of LC resonance circuit to scorching needle (3 in the figure) for treatment will oecome long and a large amount of ultra-short wave is ra ⁇ iated therefrom . Therefore attenuation of ultra-short wave occurs in tne leading wire.
- the LC resonance circuit ( 2 in the figure ) is pulled out of power amplification stage into scorching rod, covered with co-axial cable, thus minimizing the length of leading wire from secondary winding of transformer to scorching needle ( 3 in the figure ).
- the inductance L of LC resonance elements ( 2 in the figure ) is made of 0.7-1 mm enamelled copper wire and has a value of 30-60 nH.
- the impedance of this resonance circuit is preferably 1.5-3 ohms.
- the output voltage of power amplification stage varies depending upon the changing-over of secondary winding voltage 40,50,60 V of transformer by switch and the scorching is carried out at an adequate state and position according to the size of discrepancy.
- the ultra-short wave oscillation and power amplification circuit is realized by means of at least 2 pieces of transistor, thus ensuring the power demand.
- the treatment is carried out at a predetermined state without electrical sense.
- the oscillating, frequency of ultra-short wave for scorching is set as high as that of giving merely thermal sense alone without electrical sense.
- the ultra-short wave discharge affects merely the surface of human skin due to surface effect of high frequency. In case of discrepancy of 5 mm or so in diameter, 10-30 seconds are enough for complition of scorching.
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- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Electrotherapy Devices (AREA)
Abstract
This invention relates to an apparatus for removing abnormal discrepancies appearing on the surface of human body, on the face in particular, by using ultra-short wave discharge heating effect. The apparatus comprises four parts, i.e. a circuit of power source, filter circuit, oscillator circuit, power amplification and output circuit. A.C. 220 V or 110 V is supplied to primary winding of transformer. The pulsated d.c. voltage from rectifying circuit is smoothed at filter circuit and supplied to the circuit. Oscillator circuit was designed so as to supply input signal enough for next stage, the circuit of power amplification. The last power amplification stage is composed so as to supply discharge voltage and current enough for scorching abnormal discrepancies on the surface of human skin.
Description
HOUSEHOLD SEMICONDUCTOR-TYPE BEAUTY APPLIANCE
This invention relates to an apparatus for removing abnormal discrepancies, such as macula etc. appearing on the surface of human body, on the face in particular, by using ultra-short wave discharge heating effect.
In order to create ultra-short wave discharge, hundreds volts of ultra-short wave voltage and current should be output.
Until now, such a discharge effect on a dielectric has been realized by means of vacuum tube. Though vacuum tube operates at high anode voltage to easily realize oscillation and power amplification, it is bulky,heavy and needs high power consump tion.
Present invention provides an apparatus using ultra-short wave discharge effect created by semiconductor device in order to reduce power consumption with same treating effect. Further, this apparatus provides the solution to making the appratus lighter and compact by employing semiconductor device.
The invention will be described in detail,with reference to attached figure.
The figure shows a block diagram of semiconductor-type beauty appliance.
As is seen in the figure, the apparatus comprises four parts, i.e. a circuit of power source, filter circuit, oscillator circuit,power amplification and output circuit.
A.C. 220 V or 110 V is supplied to primary winding of transformer and 40, 50 or 60 V output is obtained from the seconddry winding. This output voltage is changed over to adjust the voltage to be supplied to the circuit.
Alternating current obtained at the secondary winding of transformer is changed over to direct current at a rectifying circuit.
The pulsated d.c. voltage from rectifying circuit is smoothed at filter circuit and supplied to the circuit.
The oscillator circuit comprises LC oscillstor circuit.
LC oscillator circuit is proposed to satisfy the phase balancing condition and amplitude balancing condition, taking into
consideration the influence of parasitic capacity and parasitic inductance and is made so as to set the most adequate operating point of ultra-short wave oscillation by inserting bias control device.
Oscillator circuit was designed so as to supply input signal enough for next stage, the circuit of power amplification.
To meet this demand, the oscillator circuit is coupled with output stage by means of a high frequency transformer.
This high frequecy transformer is designed to ensure matching between the output of oscillator circuit and input of power amplification stage.
The last power amplification stage is composed so as to supply discharge voltage and current enough for scorching abnormal discrepancies on the surface of human skin.
If the scorching is to be carried out, the ultra-short wave output should generate voltage and current enough for creating discharge heating effect.
The minimum ultra-short wave voltage for creating discharge heating is 300 V or so and the voltage is limited within 700 V to avoid excess discharge.
Generally, when electric current flows through human body, the man feels electrical sense through his nervous system. This electric sense varies according to the frequency of flowing current.
The lower the frequency becomes,the bigger electric sense is felt and the higher the frequency grows, the smaller electric sense is felt. For various human body, with current of over 150 KHz flowing through his body, a man feels only a thermal sense.
Based upon this principle, the invention proposes the frequency range of 40 MHz-50 MHz.
If ultra-short wave of over 100 MHz is set for discharge heating,more dielectric heating effect will appear than discharge heating effect. As a result, the heating will occur in deeper portion of the human body than in his surface,which will give a bad after-effect to human body. Considering this influence, 80-50 MHz of scorching frequency is set in this invention .
The ultra-short wave signal from oscillator stage is largely amplified at the output stage. For the purpose of reducing the self-thermal loss in operating state of output stage and ensuring stable operating condition, the transistor of output stage is made of β class, preferably C class.
The load of transistor of output stage is LC resonance circuit. In this invention, this resonance elements are pulled out, covered with co-axial cable, to scorching rod and the distance from resonance element to scorching needle is set minimum.
The inductance L composing the above-mentioned resonance element is made in the form of a transformer, and the end of secondary winding of transformer is directly connected to scorching needle
By increasing the number of tun.s of this secondary winding than that of primary winding,hundreds volts of ultra-short wave for scorching is created.
To the scorching needle is supplied such a voltage of as much volt as multiple of transformation ratio n (n > 1 ) of reson ance voltage Uo of LC resonance circuit.
If LC resonance circuit is placed in the power amplification stage, the leading wire from the L of LC resonance circuit to scorching needle (3 in the figure) for treatment will oecome long and a large amount of ultra-short wave is raαiated therefrom . Therefore attenuation of ultra-short wave occurs in tne leading wire. In this invention, the LC resonance circuit ( 2 in the figure ) is pulled out of power amplification stage into scorching rod, covered with co-axial cable, thus minimizing the length of leading wire from secondary winding of transformer to scorching needle ( 3 in the figure ).
The inductance L of LC resonance elements ( 2 in the figure ) is made of 0.7-1 mm enamelled copper wire and has a value of 30-60 nH. The impedance of this resonance circuit is preferably 1.5-3 ohms.
The output voltage of power amplification stage varies depending upon the changing-over of secondary winding voltage 40,50,60 V of transformer by switch and the scorching is carried out at an adequate state and position according to the
size of discrepancy.
Also, by adjusting the bias voltage of oscillator circuit with variable resistance, the fine adjustment of the ultra-short wave discharge voltage of scorching needle is achieved.
The ultra-short wave oscillation and power amplification circuit is realized by means of at least 2 pieces of transistor, thus ensuring the power demand.
The semiconductor type beauty appliance according to this invention has a following advantages over conventional ones:
Firstly, the treatment (scorching) is carried out at a predetermined state without electrical sense. The oscillating, frequency of ultra-short wave for scorching is set as high as that of giving merely thermal sense alone without electrical sense.
Different from electric mes or other treating devices, even electric current of a component having low frequency can not flow because only one electric needle comes in contact with a human body.
Secondly, no bleeding occurs during scorching of abnormal discrepancies.
As blood coagulates in a heating state, by nature of human body,no bleeding occurs during and after scorching.
Thirdly, little pain is given to the patient.
During scorching, the ultra-short wave discharge affects merely the surface of human skin due to surface effect of high frequency. In case of discrepancy of 5 mm or so in diameter, 10-30 seconds are enough for complition of scorching.
Fourthly, no aftereffect occurs after scorching and completley normal skin grows gradually.
Fifthly,different from an ultra-short wave electric mes or other conventional ultra-short wave apparatus and power consumption is greatly reduced due to the employment of semiconductor.
Claims
1. Semiconductor-type beauty appliance for removing abnormal discrepancies,from the surface of human body, from his face in particular,using ultra-short wave discharge heating effect, characterized in that the inductance of oscillator circuit with three points capacity is pulled out of power amplification stage, covered with 75 ohm co-axial cable, into scorching rod and placed therein to minimize the loss of oscillated power and power attenuation phenomena,due to distrioution parameter and increase the effect of treatment.
2. Semiconductor-type beauty appliance according to claim 1, characterized in that the inductance of resonance elements in scorching rod is realized by high frequency transformer and output voltage obtained reaches preferably 300-700 V,more preferably 400-500 V, most preferably 440-450 V.
3. Semiconductor-type beauty appliance according to claim 1, characterized in that the coil of primary winding of high frequency transformer is made of enamelled copper wire of 0.6-
1 mm in diameter. The value of inductance is 20-60 nH and 30- 60 w of ultra-short wave output with 40-50 MHz of resonance frequency is obtained.
4. Semiconductor-type beauty appliance according to claim 1 , characterized in that power source unit comprises full wave rectifier circuit, preferably with smoothing circuit included, and that +40-+60 V of stable d.c. voltage is used and that the power source voltage varies by step to ensure the needed power according to the size of discrepancy.
5. Semiconductor-type beauty appliance according to claim
1, characterized in that in order to ensure more adequate output, the fine adjustment of bias voltage of oscillation element is realized by means of variable resistance.
6. Semiconductor-type beauty appliance according to claim 1, characterized in that ultra-short wave oscillation and power amplification circuit is realized by means of semiconductor device to make the appliance smaller, lighter, compact for convenience of carrying.
7. Semiconductor-type beauty appliance according to claim 1 , characterized in that oscillation and power amplification is realized with at least 2 elements to ensure necessary power with the formation of simple circuitry.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KP244490 | 1990-10-01 | ||
| KP90-2444 | 1990-10-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1992005834A1 true WO1992005834A1 (en) | 1992-04-16 |
Family
ID=19198154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KP1991/000001 WO1992005834A1 (en) | 1990-10-01 | 1991-10-01 | Household semiconductor-type beauty appliance |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH688263A5 (en) |
| WO (1) | WO1992005834A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2248857A1 (en) * | 1973-10-26 | 1975-05-23 | Gouttebessis Rene | Self-contained electrotherapy apparatus - has two electrode housings held in the hands and connected by cable |
| DE2443913A1 (en) * | 1974-09-13 | 1976-04-01 | Pitterling Electronic Gmbh | Acupuncture treatment with pulse generator - using different pulse shapes and resistance measuring cct. |
| FR2563735A1 (en) * | 1984-05-04 | 1985-11-08 | Dervieux Dominique | BIPOLAR PIEZOELECTRIC SPARK DISCHARGE ELECTRODES FOR THE RELIEF OF PAIN AND CONTRACTURE IN DIRECT APPLICATION TO SKIN CONTACT |
| FR2603490A1 (en) * | 1986-09-04 | 1988-03-11 | Vachier Jacques | Apparatus for generating galvanic and faradic current for bodily hygiene treatments |
| SU1475681A1 (en) * | 1987-05-11 | 1989-04-30 | Предприятие П/Я Р-6681 | Uv-irradiation apparatus |
-
1991
- 1991-10-01 CH CH182292A patent/CH688263A5/en not_active IP Right Cessation
- 1991-10-01 WO PCT/KP1991/000001 patent/WO1992005834A1/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2248857A1 (en) * | 1973-10-26 | 1975-05-23 | Gouttebessis Rene | Self-contained electrotherapy apparatus - has two electrode housings held in the hands and connected by cable |
| DE2443913A1 (en) * | 1974-09-13 | 1976-04-01 | Pitterling Electronic Gmbh | Acupuncture treatment with pulse generator - using different pulse shapes and resistance measuring cct. |
| FR2563735A1 (en) * | 1984-05-04 | 1985-11-08 | Dervieux Dominique | BIPOLAR PIEZOELECTRIC SPARK DISCHARGE ELECTRODES FOR THE RELIEF OF PAIN AND CONTRACTURE IN DIRECT APPLICATION TO SKIN CONTACT |
| FR2603490A1 (en) * | 1986-09-04 | 1988-03-11 | Vachier Jacques | Apparatus for generating galvanic and faradic current for bodily hygiene treatments |
| SU1475681A1 (en) * | 1987-05-11 | 1989-04-30 | Предприятие П/Я Р-6681 | Uv-irradiation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CH688263A5 (en) | 1997-07-15 |
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