WO1982003493A1 - Improved photodetector - Google Patents

Improved photodetector Download PDF

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Publication number
WO1982003493A1
WO1982003493A1 PCT/US1982/000283 US8200283W WO8203493A1 WO 1982003493 A1 WO1982003493 A1 WO 1982003493A1 US 8200283 W US8200283 W US 8200283W WO 8203493 A1 WO8203493 A1 WO 8203493A1
Authority
WO
WIPO (PCT)
Prior art keywords
case
electrically conductive
set forth
photodetector
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1982/000283
Other languages
English (en)
French (fr)
Inventor
Technology Inc Biox
Scott A Wilber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BIOX Tech Inc
Original Assignee
BIOX Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BIOX Tech Inc filed Critical BIOX Tech Inc
Priority to DE823239731T priority Critical patent/DE3239731T1/de
Priority to NLAANVRAGE8220116,A priority patent/NL185377C/xx
Priority to AU83316/82A priority patent/AU8331682A/en
Publication of WO1982003493A1 publication Critical patent/WO1982003493A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00Photoelectric discharge tubes not involving the ionisation of a gas

Definitions

  • the present invention relates generally to photo- detectors for sensing and measuring radiant energy, and 5 particularly visible, invisible and near light wavelength energy, and more particularly to a photodetector including an electrically conductive window which is transparent to the desired light and near light wavelengths while pre ⁇ cluding interference in such desired measurements by other
  • electromagnetic radiation such as radio frequency inter ⁇ ference, power line emissions and other spurious sources.
  • Photodetectors are generally available in the form of devices that sense illumination falling thereon. Meas-
  • 15 urements may be qualitative, i.e., the presence or absence of illumination, o.r quantitative, i.e., a measurement of • the intensity of illumination thereon.
  • photo- detectors take the form of a sensitive area which varies as to electrical properties as a function of light or re-
  • photovaristors commonly cadmium sul ⁇ phide and lead telluride devices
  • phototransistors typi ⁇ cally junction transistors with the base exposed to a light source in order to modulate the collector current as a func-
  • photodiodes solid state diode devices in which PN junctions are sensi ⁇ tive ' to light incident thereon to alter current
  • photo- resistor materials photoconductive materials, photovoltaic cells, etc.
  • photo- resistor materials photoconductive materials, photovoltaic cells, etc.
  • phototransistors and photodiodes are considered the more sensitive of the photodetec ⁇ tor devices.
  • Photodetectors are often employed in very demanding and sensitive measurement processes. Typical of the de and-
  • the photodetector is placed adjacent a thin section of living tissue in order to measure the light passing through the- tissue and, as a function of the light measured, determine the oxygenation of blood within such tissue.
  • the determination may be, in some instances a life and death measurement.
  • the subjects of such determination may be patients exposed to a number of sources of interfering radiation.
  • Surgical patients for example, are often monitored by a number of devices, i.e., electrocardiograms, electroencephalograms, and other body function measuring electronic devices, as well as being subject to radio frequency currents utilized in electro- surgery.
  • the patient's body is a significant source of static electricity and various electromagnetic radiation including radio frequency interference and 60 Hz AC emissions.
  • Such radiation is fully capable of regis ⁇ tering spurious signals in photodetectors, and particularly solid state photodetectors.
  • the photosensitive material in the case of solid state photodetectors, may produce a current.
  • conductance of the photodetector may be induced by a "field effect" caused by such interference.
  • the present invention which provides a heretofore unavailable improvement over previous photodetectors for selected light and near light wavelength energy detection and/or measurement, comprises a photosensitive material car ⁇ ried within a conductive case having defined therein a win ⁇ dow transparent to the desired light and near light wave- lengths and also conductive to isolate the photosensitive material from various interferences such as static electri ⁇ city, radio frequency, AC power line couplings, and other such electromagnetic radiation.
  • the window is formed of glass or similar vitrious materials, or crystal ⁇ line substances such as quartz, and includes an electri ⁇ cally conductive thin coating of metal or metal oxide thereon with the metal oxide being sufficiently thin to be transparent to the desired wavelengths.
  • the window may be of a conductive vitrious, or other homogenous, material.
  • an object of the present: invention is to provide a new and improved photodetector for selective wavelengths of energy which is insensitive to non-selected wavelengths of electromagnetic energy to preclude or reduce spurious signals induced by the non-selected wavelengths of energy.
  • Another object of the present invention is to provide a new and improved photodetector which may be conveniently and economically produced utilizing conventional photode ⁇ tector structures.
  • FIGURE 1 is a partially cut away and sectioned view of a photodiode photodetector in accord with a preferred embodiment of the invention.
  • FIGURE 2 is a side view of a preferred embodiment of the window employed in the photodetector of FIGURE 1. Best Mode for Carrying Out the Invention.
  • Photodetector 10 is specifically configured as a photodiode, since a photodiode is one of the more sensitive of photodetectors, and thus presents a more difficult case. However, it is to.
  • Photodetector 10 includes an electrically conductive case 12, which is typically formed of metal, carrying on a wall thereof photosensitive material 14.
  • photosensitive material 14 comprises a PN junction which, when a potential is provided across such junction, is sen- sitive to photons and other radiant energy to provide a hole-electron pair, thereby inducing conductance .in photo ⁇ sensitive material 14 as a function of the radiation strik ⁇ ing such material.
  • electrode 16 through contact with case 12 is in electrical contact with one portion of photosensitive material 14, while electrode 17 is connected to photosensitive material 14 such that an electrical circuit between electrodes 16 and 17 can be com ⁇ pleted only through photosensitive material 14.
  • a transparent window 22 is hermetically sealed therein to permit transmission of photons in the form of visible, invisible and near light wavelength energy.
  • conductive layer 24 is provided on at least one surface of window 22, typically at least the outer surface in most instances to act as anti-reflective as well as conductive layer, with conductive layer 24 also electrically in contact with case 12.
  • Conductive layer 24, as illustrated in FIGURE 2 may be formed in a number of well known manners.
  • a thin layer of metal, preferably a non-oxidizable, noble metal such as gold, may be sputter coated in a very thin layer onto window 22 to provide an electrically conductive layer which is transparent to desired wavelengths of light. While thin, sputter coatings of reduced metal are operable, the process and materials tend to be expensive. The more commonly available metals when sputter coated are subject to oxida ⁇ tion which may compromise the conductivity and transparency required of thin layer 24.
  • layer 24 may be more conveniently and economically produced by applying solutions or vapors of metal compounds to window 22, and then pyrolytically decomposing such compounds to form metal oxide coatings which are transparent and electrically con ⁇ ductive.
  • Such processes are well known for, as an example, producing transparent, conductive resistance heating coat ⁇ ings on aircraft windshields etc. Vapors of stannic chlo- ride are conveniently pyrolyzed to form a transparent, con ⁇ ductive and stable layer of tin oxide, which is quite suitable as conductive layer 24.
  • Various other methods for producing transparent, electrically conductive layers may also be employed.
  • the photodetector of the instant inven ⁇ tion provides heretofore unavailable discrimination between light and near light wavelength energy, and interference resulting from static electricity and various radio fre ⁇ quencies and other electromagnetic energy forms. While the preferred embodiment involves a transparent window car ⁇ rying thereon a thin, transparent, electrically conductive layer, it is also contemplated and possible to produce a transparent glass substance .which itself is .electrically conductive as a substantially homogeneous, as opposed to layered, structure. Depending on the wavelenths of visible, invisible and near light wavelengths. Thus, in selective situations, the photodetector of the instant invention not only rejects electromagnetic and radio frequency radiation, but may also reject undesirable ambient or other light.
  • the window may be vitrious, crystalline or polycrystalline.

Landscapes

  • Light Receiving Elements (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
PCT/US1982/000283 1981-04-01 1982-03-10 Improved photodetector Ceased WO1982003493A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE823239731T DE3239731T1 (de) 1981-04-01 1982-03-10 Verbesserter fotodetektor
NLAANVRAGE8220116,A NL185377C (nl) 1981-04-01 1982-03-10 Fotodetectorinrichting.
AU83316/82A AU8331682A (en) 1981-04-01 1982-03-10 Improved photodetector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US250955810401 1981-04-01
US06/250,955 US4394572A (en) 1981-04-01 1981-04-01 Photodetector having an electrically conductive, selectively transmissive window

Publications (1)

Publication Number Publication Date
WO1982003493A1 true WO1982003493A1 (en) 1982-10-14

Family

ID=22949866

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1982/000283 Ceased WO1982003493A1 (en) 1981-04-01 1982-03-10 Improved photodetector

Country Status (9)

Country Link
US (1) US4394572A (https=)
EP (1) EP0075584A1 (https=)
JP (1) JPS58500465A (https=)
AU (1) AU8331682A (https=)
CA (1) CA1177942A (https=)
DE (1) DE3239731T1 (https=)
GB (1) GB2109993B (https=)
NL (1) NL185377C (https=)
WO (1) WO1982003493A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2754637A1 (fr) * 1991-03-19 1998-04-17 Thomson Csf Systeme de detection optique protege contre les impulsions electromagnetiques

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU573645B2 (en) * 1983-11-21 1988-06-16 Sumitomo Electric Industries, Ltd. Package for opto-electrical device
KR910006887B1 (ko) * 1988-06-15 1991-09-10 마쯔시다덴기산교 가부시기가이샤 전기소제기의 쓰레기 검지장치
US5596986A (en) * 1989-03-17 1997-01-28 Scico, Inc. Blood oximeter
US5146092A (en) * 1990-05-23 1992-09-08 Ntc Technology, Inc. Gas analysis transducers with electromagnetic energy detector units
US5351685A (en) * 1991-08-05 1994-10-04 Nellcor Incorporated Condensed oximeter system with noise reduction software
US5348004A (en) * 1993-03-31 1994-09-20 Nellcor Incorporated Electronic processor for pulse oximeter
US5676141A (en) * 1993-03-31 1997-10-14 Nellcor Puritan Bennett Incorporated Electronic processor for pulse oximeters
US5419322A (en) * 1993-07-22 1995-05-30 Joseph; Barry M. Internal apparatus for continuous electrical and oximetric intrapartum monitoring of the fetus
US5490523A (en) * 1994-06-29 1996-02-13 Nonin Medical Inc. Finger clip pulse oximeter
US5810723A (en) * 1996-12-05 1998-09-22 Essential Medical Devices Non-invasive carboxyhemoglobin analyer
US6184521B1 (en) * 1998-01-06 2001-02-06 Masimo Corporation Photodiode detector with integrated noise shielding
US6064898A (en) * 1998-09-21 2000-05-16 Essential Medical Devices Non-invasive blood component analyzer
DE10003087A1 (de) * 2000-01-25 2001-09-13 Infineon Technologies Ag Anordnung für ein optoelektronisches Sende- und Empfangsmodul
DE10121185B4 (de) * 2001-04-30 2013-04-25 Sick Ag Optischer Sensor
US20040211881A1 (en) * 2003-04-23 2004-10-28 Pierre Liu Image sensor capable of avoiding lateral light interference
US7026619B2 (en) * 2004-02-20 2006-04-11 Suppression Technologies, Inc. Detector with coated lens assembly
DE102004024368A1 (de) * 2004-05-17 2005-12-15 Rohde & Schwarz Gmbh & Co. Kg Beleuchtbares GaAs-Schaltbauteil mit transparentem Gehäuse und Mikrowellenschaltung hiermit
EP2132787B1 (en) * 2007-02-20 2012-04-11 EFW Inc. Temperature controlled photodetector
FR2930084B1 (fr) 2008-04-09 2012-06-08 Thales Sa Procede de gestion d'un reseau electrique
US20100116970A1 (en) * 2008-11-12 2010-05-13 Wen-Long Chou Photo detection device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2669663A (en) * 1951-11-30 1954-02-16 Rca Corp Semiconductor photoconducting device
US3153149A (en) * 1962-08-20 1964-10-13 Raytheon Co Photosensitive electro-optical device with electrostatic shielding means
US3196274A (en) * 1961-12-12 1965-07-20 Bell Telephone Labor Inc Light beam demodulator
US3934170A (en) * 1971-10-18 1976-01-20 Varian Associates Image tube and method and apparatus for gating same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2669663A (en) * 1951-11-30 1954-02-16 Rca Corp Semiconductor photoconducting device
US3196274A (en) * 1961-12-12 1965-07-20 Bell Telephone Labor Inc Light beam demodulator
US3153149A (en) * 1962-08-20 1964-10-13 Raytheon Co Photosensitive electro-optical device with electrostatic shielding means
US3934170A (en) * 1971-10-18 1976-01-20 Varian Associates Image tube and method and apparatus for gating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2754637A1 (fr) * 1991-03-19 1998-04-17 Thomson Csf Systeme de detection optique protege contre les impulsions electromagnetiques

Also Published As

Publication number Publication date
GB2109993B (en) 1985-04-24
DE3239731C2 (https=) 1990-04-19
DE3239731T1 (de) 1983-08-25
CA1177942A (en) 1984-11-13
NL185377C (nl) 1990-03-16
US4394572A (en) 1983-07-19
NL8220116A (nl) 1983-02-01
AU8331682A (en) 1982-10-19
JPS58500465A (ja) 1983-03-24
GB2109993A (en) 1983-06-08
NL185377B (nl) 1989-10-16
EP0075584A1 (en) 1983-04-06

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