WO1981003083A1 - Magnetotransistor detector - Google Patents

Magnetotransistor detector Download PDF

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Publication number
WO1981003083A1
WO1981003083A1 PCT/US1980/000444 US8000444W WO8103083A1 WO 1981003083 A1 WO1981003083 A1 WO 1981003083A1 US 8000444 W US8000444 W US 8000444W WO 8103083 A1 WO8103083 A1 WO 8103083A1
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WIPO (PCT)
Prior art keywords
detector
magnetotransistor
surface zone
dopant concentration
conductivity type
Prior art date
Application number
PCT/US1980/000444
Other languages
French (fr)
Inventor
S Soclof
Original Assignee
Rockwell International Corp
S Soclof
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp, S Soclof filed Critical Rockwell International Corp
Priority to DE19803047872 priority Critical patent/DE3047872A1/en
Priority to PCT/US1980/000444 priority patent/WO1981003083A1/en
Priority to JP50105580A priority patent/JPS57500490A/ja
Publication of WO1981003083A1 publication Critical patent/WO1981003083A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/37—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using galvano-magnetic devices, e.g. Hall-effect devices using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Definitions

  • the invention is concerned with a detector for reading information representing magnetization patterns at a predetermined location and more particularly with a semiconductor detector for reading such magnetization patterns.
  • the invention relates to devices for reading information representing magnetization patterns and more particularly to a magnetotransistor detector for reading such patterns.
  • detectors for reading information representing magnetization patterns are known in the prior art. These include various magnetoresistive elements as well as devices which operate by means of the Hall effect.
  • the Hall effect is concerned with the deflection of charged particles under the influence of an external magnetic field, producing a voltage traverse to the direction of current flow.
  • the general disadvantage of these prior art devices are that they are limited by the speed at which they operate.
  • the invention is concerned with a magnetotransistor detector for reading information representing magnetization patterns at predetermined information positions
  • the invention includes a body of semiconductor material provided with a plurality of detector elements adjacent a major surface thereof.
  • Each of the detector elements is disclosed adjacent a corresponding respective one of the information positions.
  • Each detector element is formed by a first surface zone of a first conductivity type and a first dopant concentration, second and third surface zones spaced apart from said first surface zone and from each other, the second and third surface zones being of the first conductivity type and the first dopant concentration, and a fourth surface zone of a second conductivity type and a second dopant concentration.
  • the fourth surface zone is disposed between the first surface zone and the second surface zone, and between the first surface zone and the third surface zone.
  • FIG. 1 is a highly simplified top plan view of the magnetotransistor detector according to the present invention.
  • FIG. 2 is a cross-sectional view of the magnetotransistor detector through the 2-2 plane in FIG. 1;
  • FIG. 3 is a proposed schematic diagram symbol of the magnetotransistor detector according to the present invention.
  • FIG. 4 is a cross-sectional view of a plurality of magnetotransistor detectors according to the present invention with an adjacent magnetic media having a plurality of corresponding information representing magnetization patterns at separate information positions.
  • the magnetotransistor detector is implemented as a bipolar transistor on the surface of a semiconductor body, such as a semiconductor strip.
  • the bipolar transistor consists of an emitter region 10, a base region 11, and two spaced apart collector regions 12 and 13.
  • the emitter region 10 is a first surface zone of a first conductivity type and a first dopant concentration. In the embodiment shown in FIG. 1, it is n+.
  • the two spaced apart collector regions 12 and 13 are surface zones also of the first conductivity type and the first dopant concentration, (i.e. n+, type).
  • the base region 11 forms a fourth surface zone of a second conductivity type and a second dopant concentration (i.e., p-type) and is disposed between the first and the second, and the first and the third surface zones.
  • the emitter region 10, and the two collector regions 12 and 13 are preferably rectangularly shaped regions, while the base region 11 is preferably a wedge-shaped region extending between the first region and the second and the third regions. Each side of the wedge-shaped region 11 includes triangularly-shaped indentations 14 which are used for adjustment purposes.
  • the portion of the region 11 directly adjacent the emitter region 10 has a higher dopant concentration than the remainder of the region 11. This region of higher dopant concentration, that is forming a p+-type region, is shown in the FIG. 1 as forming a region 15.
  • the two collector regions 12 and 13 are electrically isolated from one another, such as by a surface zone of isolation material,e.g.: a dielectric.
  • the magnetotransistor detector interfaces with an adjacent magnetic media, and in particular, with an adjacent information carrying magnetization element in close proximity to the magnetotransistor detector
  • dotted line 16 a track or propagation path for magnetic bubble domain on a layer of magnetic material which is placed in a plane substantially parallel to and adjacent the surface of the semiconductor body upon which the magnetotransistor detector is implemented.
  • the dotted lines 16 show the placement of the propagation path in the magnetic layer in relationship to the magnetotransistor detector in FIG. 1.
  • the dotted lines 17 also show the size and position of a magnetic bubble as it travels along the propagation path 16 and overlies a portion of the base region 11.
  • M ⁇ and ⁇ M ⁇ as the angle through which the electrons are deflected by the magnetic field (i .e. , the Hall Angle) , M will be gi ven approximately by .
  • the equivalent input (i . e. base) voltag e . is given by the relationship so that
  • FIG. 2 there is shown a cross-sectional view of the magnetotransistor detector through the 2-2 plane shown in FIG. 1.
  • like elements have the same reference numerals so that the emitter region 10, the base region 11, the collector region 13, and the p+ region 15 is shown in the figure in cross-section corresponding to the view shown in FIG. 1.
  • a magnetic media such as a magnetic tape or a thin layer of magnetic material which supports bubble domains is shown which is arranged substantially parallel to the surface 20 of the semiconductor body on which the magnetotransistor detector according to the present invention is implemented.
  • the layer 19 is a layer which supports magnetic bubble domains such as the bubble domain 17.
  • the bubble domain 17 has associated with it a magnetic field B which is shown having a field shown by the arrows.
  • the magnetic layer 19 is separated from the surface 20 by a relatively thin air gap.
  • FIG. 3 is a proposed schematic diagram symbol of the magnetotransistor detector according to the present invention showing a npn-type transistor symbol with base emitter and two collectors.
  • FIG. 4 is a cross-sectional view of a plurality of magnetotransistor detectors according to the present invention D 1 , D 2 , . . . D n which are formed on the surface of the semiconductor body 21.
  • Adjacent the semiconductor body 21 is a layer of magnetic material 22 which incorporates a plurality of tracks or information positions T 1 , T 2 . . . T n . Each of these information positions has associated with it a magnetic field.
  • Each of the tracks T 1 , T 2 . . . is associated with a respective one of the magnetotransistor detectors D 1 , D 2 , . . .
  • the magnetotransistor detector is implemented as a bipolar transistor having an essentially wedge-shaped geometric configuration. It must be realized however that the present invention is not limited to the geometric configuration shown in the preferred embodiment or the electronic structures associated with bipolar transistors. Since other geometric configurations arid structures, as well as other transistor devices, including field effect transistors, integrated injection logic devices, thyristors, and other structures could be implemented as well.
  • the semiconductor body shown in FIG. 1 upon which the magnetotransistor detector is implemented may take a wide variety of different forms.
  • One possibility is for the semiconductor material to be placed on a flexible strip and the flexible strip applied to either the outer or inner surface of a cylindrical body.
  • magnetotransistor detector according to the present invention can be manufactur with various semiconductor technologies and different combinations of known process steps, and that the preferred embodiments illustrated here are merely exemplary.
  • the depth of penetration of the various zones and regions and in particular the configuration and distance between the active zones of the detector, as well as the concentrations of dopant species, and/or their concentration profiles, can be chosen depending upon the application or desired detection capability.
  • the present invention is also not restricted to the specific semiconductor materials and circuits described.
  • semiconductor materials other than silicon for example A III -B V compounds, may be used.
  • the conductivity types in the regions may be interchanged and corresponding to such change, the polarity of the respective operating voltages adapted.
  • the voltage level and the static or dynamic nature of the signals applied to the various terminals and gates of the device, as well as the voltage sources, may be suitably selected as desired for a particular application.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A device for reading information representing magnetization patterns on a medium by means of a magnetotransistor detector. The magnetotransistor detector consists of a bipolar transistor implemented on a semiconductor surface which is a magnetic flux coupling with a plurality of magnetization patterns. Such magnetization patterns which may be generated by a magnetic bubble domain (17) on an adjacent bubble domain device or by a magnetized region on an adjacent media such as a magnetic tape or disk. The magnetotransistor detector consists of an emitter region (10) a base region (11) and two spaced apart collector regions (12, 13).

Description

MAGNETOTRANSISTOR DETECTOR
Field of the Invention
The invention is concerned with a detector for reading information representing magnetization patterns at a predetermined location and more particularly with a semiconductor detector for reading such magnetization patterns.
Background of the Invention
The invention relates to devices for reading information representing magnetization patterns and more particularly to a magnetotransistor detector for reading such patterns.
Various types of detectors for reading information representing magnetization patterns are known in the prior art. These include various magnetoresistive elements as well as devices which operate by means of the Hall effect. The Hall effect is concerned with the deflection of charged particles under the influence of an external magnetic field, producing a voltage traverse to the direction of current flow. The general disadvantage of these prior art devices are that they are limited by the speed at which they operate.
Summary
Briefly and in general terms, the invention is concerned with a magnetotransistor detector for reading information representing magnetization patterns at predetermined information positions
More particularly, the invention includes a body of semiconductor material provided with a plurality of detector elements adjacent a major surface thereof. Each of the detector elements is disclosed adjacent a corresponding respective one of the information positions. Each detector element is formed by a first surface zone of a first conductivity type and a first dopant concentration, second and third surface zones spaced apart from said first surface zone and from each other, the second and third surface zones being of the first conductivity type and the first dopant concentration, and a fourth surface zone of a second conductivity type and a second dopant concentration. The fourth surface zone is disposed between the first surface zone and the second surface zone, and between the first surface zone and the third surface zone.
The novel features which are considered as characteristic for the invention are set forth in particular in the appended claims. The invention itself, however, both as to its construction and its method of operation, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
Brief Description of the Drawing
FIG. 1 is a highly simplified top plan view of the magnetotransistor detector according to the present invention;
FIG. 2 is a cross-sectional view of the magnetotransistor detector through the 2-2 plane in FIG. 1;
FIG. 3 is a proposed schematic diagram symbol of the magnetotransistor detector according to the present invention; and
FIG. 4 is a cross-sectional view of a plurality of magnetotransistor detectors according to the present invention with an adjacent magnetic media having a plurality of corresponding information representing magnetization patterns at separate information positions.
Brief Description of the Preferred Embodiment
Turning now to FIG. 1, there is shown a top plan view of the magnetotransistor detector according to the present invention. In the preferred embodiment, the magnetotransistor detector is implemented as a bipolar transistor on the surface of a semiconductor body, such as a semiconductor strip. The bipolar transistor consists of an emitter region 10, a base region 11, and two spaced apart collector regions 12 and 13.
The emitter region 10 is a first surface zone of a first conductivity type and a first dopant concentration. In the embodiment shown in FIG. 1, it is n+. The two spaced apart collector regions 12 and 13 are surface zones also of the first conductivity type and the first dopant concentration, (i.e. n+, type). The base region 11 forms a fourth surface zone of a second conductivity type and a second dopant concentration (i.e., p-type) and is disposed between the first and the second, and the first and the third surface zones.
The emitter region 10, and the two collector regions 12 and 13 are preferably rectangularly shaped regions, while the base region 11 is preferably a wedge-shaped region extending between the first region and the second and the third regions. Each side of the wedge-shaped region 11 includes triangularly-shaped indentations 14 which are used for adjustment purposes. The portion of the region 11 directly adjacent the emitter region 10 has a higher dopant concentration than the remainder of the region 11. This region of higher dopant concentration, that is forming a p+-type region, is shown in the FIG. 1 as forming a region 15. The two collector regions 12 and 13 are electrically isolated from one another, such as by a surface zone of isolation material,e.g.: a dielectric.
In order to indicate how the magnetotransistor detector interfaces with an adjacent magnetic media, and in particular, with an adjacent information carrying magnetization element in close proximity to the magnetotransistor detector, there is shown by the dotted line 16 a track or propagation path for magnetic bubble domain on a layer of magnetic material which is placed in a plane substantially parallel to and adjacent the surface of the semiconductor body upon which the magnetotransistor detector is implemented. The dotted lines 16 show the placement of the propagation path in the magnetic layer in relationship to the magnetotransistor detector in FIG. 1. The dotted lines 17 also show the size and position of a magnetic bubble as it travels along the propagation path 16 and overlies a portion of the base region 11. In order to understand the operation of the device one must consider the flow of electrons 18 from the emitter to the collectors in the presence of a magnetic field normal to the surface of the magnetotransistor detector, such as generated by the presence of a magnetic bubble 17.
When the magnetotransistor is operated in the active mode (emitter- base junction "on", collector-base junction "off") electrons will be emitted by the emitter into the base region. As the electrons travel through the base region 11 toward the collector regions 12 and 13, they will come under the influence of the magnetic field B (i.e., the B-field component normal to the surface). The electrons will be deflected toward one collector region or the other, depending on the polarity and magnitude of the magnetic flux density of the field B.
If one defines the current modulation factor M as
M = Δ and θM ~ as the angle through which the electrons are deflected by the magnetic field (i .e. , the Hall Angle) , M will be gi ven approximately by . The equivalent input (i . e. base) voltag
Figure imgf000007_0001
e .
Figure imgf000007_0003
is given by the relationship
Figure imgf000007_0002
so that
Figure imgf000008_0001
Thus, for example, if W = 0.2 μm and L = 2.0 μm, one has
Figure imgf000008_0006
= 20 so that M = = 20 θ M = 20 μB. For silicon, μn =1300 ~
Figure imgf000008_0005
Figure imgf000008_0003
0.1 m2/v-sec, so that θ = μnB ~ 0.1 B (W/M2 = T) . Thus M ~ 2.0 B
(B in W/M2 or Tesla, T). For B in Gauss ( = 10-4 T) we have M ~
2 x 10-4 B (Gauss) and = 50 mV x M = 10-2 mV B (Gauss) =
Figure imgf000008_0007
0.01 mV x B (Gauss)
B (Gauss) ΔVi Equiv.
10,000 (= 1 T) 100 mV
1,000 (0.1 T) 10 mV
100 (0.01T) 1.0 mV
10 (0.001T) 0.1 mV
A major contribution to the collector offset current, I offset= will be the geometric offset, ε, of the collector divider
Figure imgf000008_0004
slot with respect to the axis of the device. This will correspond to an angular error θε = ε/L. The ratio of the ΔlC due to the geometrical offset to that due to magnetic field will be given approximately by
Figure imgf000008_0002
Turning now to FIG. 2 there is shown a cross-sectional view of the magnetotransistor detector through the 2-2 plane shown in FIG. 1. In the figures like elements have the same reference numerals so that the emitter region 10, the base region 11, the collector region 13, and the p+ region 15 is shown in the figure in cross-section corresponding to the view shown in FIG. 1. A magnetic media such as a magnetic tape or a thin layer of magnetic material which supports bubble domains is shown which is arranged substantially parallel to the surface 20 of the semiconductor body on which the magnetotransistor detector according to the present invention is implemented. In the particular example shown in FIG. 2, the layer 19 is a layer which supports magnetic bubble domains such as the bubble domain 17. The bubble domain 17 has associated with it a magnetic field B which is shown having a field shown by the arrows. The magnetic layer 19 is separated from the surface 20 by a relatively thin air gap.
FIG. 3 is a proposed schematic diagram symbol of the magnetotransistor detector according to the present invention showing a npn-type transistor symbol with base emitter and two collectors.
FIG. 4 is a cross-sectional view of a plurality of magnetotransistor detectors according to the present invention D1, D2, . . . Dn which are formed on the surface of the semiconductor body 21. Adjacent the semiconductor body 21 is a layer of magnetic material 22 which incorporates a plurality of tracks or information positions T1 , T2 . . . Tn. Each of these information positions has associated with it a magnetic field. Each of the tracks T1 , T2 . . . is associated with a respective one of the magnetotransistor detectors D1, D2, . . . Thus the arrangement as shown in FIG. 4 shows that a plurality of magnetotransistor detectors can be used to simultaneously readout a multi-track magnetic media. In the preferred embodiment according to the present invention, the magnetotransistor detector is implemented as a bipolar transistor having an essentially wedge-shaped geometric configuration. It must be realized however that the present invention is not limited to the geometric configuration shown in the preferred embodiment or the electronic structures associated with bipolar transistors. Since other geometric configurations arid structures, as well as other transistor devices, including field effect transistors, integrated injection logic devices, thyristors, and other structures could be implemented as well.
The semiconductor body shown in FIG. 1 upon which the magnetotransistor detector is implemented may take a wide variety of different forms. One possibility is for the semiconductor material to be placed on a flexible strip and the flexible strip applied to either the outer or inner surface of a cylindrical body.
It will be obvious to those skilled in the art that the magnetotransistor detector according to the present invention can be manufactur with various semiconductor technologies and different combinations of known process steps, and that the preferred embodiments illustrated here are merely exemplary. The depth of penetration of the various zones and regions and in particular the configuration and distance between the active zones of the detector, as well as the concentrations of dopant species, and/or their concentration profiles, can be chosen depending upon the application or desired detection capability. These and other variations can be further elaborated by those skilled in the art without departing from the scope of the present invention.
The present invention is also not restricted to the specific semiconductor materials and circuits described. For example, it may be pointed out that semiconductor materials other than silicon, for example AIII-BV compounds, may be used. Furthermore, the conductivity types in the regions may be interchanged and corresponding to such change, the polarity of the respective operating voltages adapted. Moreover, the voltage level and the static or dynamic nature of the signals applied to the various terminals and gates of the device, as well as the voltage sources, may be suitably selected as desired for a particular application.
Without further analysis, the foregoing will so fully reveal the gist of the present invention, that others can, by applying current knowledge, readily adapt it for various applications without omitting features that, from the standpoint of prior art, fairly constitutes essential characteristics of the generic or specific aspects of this invention, and, therefore, such adaptations should and are intended to be comprehended within the meaning and range of equivalence of the following claims.
What is claimed is:

Claims

Claims :
1. A magnetotransistor detector for reading information representing magnetization patterns at a plurality of separate information positions, comprising: a body of semiconductor material provided with a plurality of detector elements adjacent a major surface thereof, each detector element being disposed adjacent respective ones of said information positions, each detector element comprising: a first surface zone of a first conductivity type and a first dopant concentration;
a second and third surface zone spaced apart from each other end said first surface zone, said second and third surface zones being of the first conductivity type and said first dopant concentration; and a fourth surface zone of the second conductivity type and a second dopant concentration disposed between said first surface zone and said second and third surface zone.
2. A magnetotransistor detector as defined in claim 1, wherein the information positions are positions on a magnetic storage media containing a region of magnetization in a predetermined direction.
3. A magnetotransistor detector as defined in claim 2, wherein said magnetic storage media is a layer of magnetizable material capable of supporting magnetic bubble domains.
4. A magnetotransistor detector as defined in claim 1, further comprising a surface zone of the second conductivity type and said first dopant concentration disposed between said first surface zone and said fourth surface zone.
5. A magnetotransistor detector as defined in claim 1, wherein said fourth surface zone is substantially wedge-shaped.
6. A magnetotransistor detector as defined in claim 5, wherein said sides of said fourth surface zone contain indentations therein.
7. A magneototransistor detector as defined in Claim 1, further comprising a surface zone of isolation material disposed between said second and said third surface zones.
8. A magneototransistor detector as defined in claim 1, wherein said second and said third surface zones are electrically isolated from one another.
PCT/US1980/000444 1980-04-18 1980-04-18 Magnetotransistor detector WO1981003083A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19803047872 DE3047872A1 (en) 1980-04-18 1980-04-18 Magnetotransistor detector
PCT/US1980/000444 WO1981003083A1 (en) 1980-04-18 1980-04-18 Magnetotransistor detector
JP50105580A JPS57500490A (en) 1980-04-18 1980-04-18

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/US1980/000444 WO1981003083A1 (en) 1980-04-18 1980-04-18 Magnetotransistor detector
WOUS80/00444 1980-04-18

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702991A (en) * 1971-03-30 1972-11-14 Texas Instruments Inc Magnetic domain memory structure
US3835376A (en) * 1971-08-20 1974-09-10 Agency Ind Science Techn Method and apparatus for detecting uneven magnetic field by sweeping a plasma current across a semiconductor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702991A (en) * 1971-03-30 1972-11-14 Texas Instruments Inc Magnetic domain memory structure
US3835376A (en) * 1971-08-20 1974-09-10 Agency Ind Science Techn Method and apparatus for detecting uneven magnetic field by sweeping a plasma current across a semiconductor
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor

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JPS57500490A (en) 1982-03-18

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