UST104102I4 - Polysilicon-base self-aligned bipolar transistor process and structure - Google Patents

Polysilicon-base self-aligned bipolar transistor process and structure Download PDF

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Publication number
UST104102I4
UST104102I4 US06/370,897 US37089782A UST104102I4 US T104102 I4 UST104102 I4 US T104102I4 US 37089782 A US37089782 A US 37089782A US T104102 I4 UST104102 I4 US T104102I4
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US
United States
Prior art keywords
polysilicon
bipolar transistor
transistor process
base self
aligned bipolar
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Pending
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US06/370,897
Inventor
Allen P. Ho
Cheng T. Horng
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Publication date
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Priority to US06/370,897 priority Critical patent/UST104102I4/en
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Publication of UST104102I4 publication Critical patent/UST104102I4/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D64/0113—
    • H10W20/069—

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  • Bipolar Transistors (AREA)

Abstract

A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.
US06/370,897 1980-03-24 1982-04-22 Polysilicon-base self-aligned bipolar transistor process and structure Pending UST104102I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/370,897 UST104102I4 (en) 1980-03-24 1982-04-22 Polysilicon-base self-aligned bipolar transistor process and structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13315580A 1980-03-24 1980-03-24
US06/370,897 UST104102I4 (en) 1980-03-24 1982-04-22 Polysilicon-base self-aligned bipolar transistor process and structure

Related Parent Applications (1)

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US13315580A Continuation 1980-03-24 1980-03-24

Publications (1)

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UST104102I4 true UST104102I4 (en) 1984-04-03

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Family Applications (1)

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US06/370,897 Pending UST104102I4 (en) 1980-03-24 1982-04-22 Polysilicon-base self-aligned bipolar transistor process and structure

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US (1) UST104102I4 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738624A (en) 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor
US4907063A (en) 1983-10-14 1990-03-06 Hitachi, Ltd. Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907063A (en) 1983-10-14 1990-03-06 Hitachi, Ltd. Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces
US4738624A (en) 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor

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