UST103203I4 - Thin layer deposition process - Google Patents

Thin layer deposition process Download PDF

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Publication number
UST103203I4
UST103203I4 US06/408,332 US40833282A UST103203I4 US T103203 I4 UST103203 I4 US T103203I4 US 40833282 A US40833282 A US 40833282A US T103203 I4 UST103203 I4 US T103203I4
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US
United States
Prior art keywords
lift
metal film
mask
baking step
quinone diazide
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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US06/408,332
Inventor
Timothy W. Carr
Charles D. Needham
Robert T. Villetto, Jr.
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Priority to US06/408,332 priority Critical patent/UST103203I4/en
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Publication of UST103203I4 publication Critical patent/UST103203I4/en
Pending legal-status Critical Current

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    • H10P76/202—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H10D64/0121—
    • H10P14/6681—

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method of preventing out-gassing from lift-off structures formed of positive resists (as for example, o-quinone diazide/phenol formaldehyde novolak resins) during vacuum evaporation of metals in the fabrication of semiconductor devices. Such outgassing is avoided by compositional control of the photosensitive resist lift-off layer and by providing an additional baking step after the lift-off mask has been formed. Both conditions are required and critical to avoid the volatile resin decomposition products which not only tend to contaminate the device substrate surface, but also the deposited metal film. The method employs a photosensitive polymer which contains about 10 to 20 wt. % of the sensitizer (e.g. o-quinone diazide) in conjunction with a secondary baking step at about 160° to about 200° C. after the lift-off mask has been formed and prior to metal film deposition. As a result the method provides an improved metal film as well as increased through-put, particularly when forming Schottky barrier diode contacts.
US06/408,332 1979-12-26 1982-08-16 Thin layer deposition process Pending UST103203I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/408,332 UST103203I4 (en) 1979-12-26 1982-08-16 Thin layer deposition process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10660879A 1979-12-26 1979-12-26
US06/408,332 UST103203I4 (en) 1979-12-26 1982-08-16 Thin layer deposition process

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10660879A Continuation 1979-12-26 1979-12-26

Publications (1)

Publication Number Publication Date
UST103203I4 true UST103203I4 (en) 1983-07-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
US06/408,332 Pending UST103203I4 (en) 1979-12-26 1982-08-16 Thin layer deposition process

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US (1) UST103203I4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532002A (en) 1984-04-10 1985-07-30 Rca Corporation Multilayer planarizing structure for lift-off technique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532002A (en) 1984-04-10 1985-07-30 Rca Corporation Multilayer planarizing structure for lift-off technique

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