USRE37982E1 - Method for preventing electrostatic discharge failure in an integrated circuit package - Google Patents

Method for preventing electrostatic discharge failure in an integrated circuit package Download PDF

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USRE37982E1
USRE37982E1 US09/498,126 US49812600A USRE37982E US RE37982 E1 USRE37982 E1 US RE37982E1 US 49812600 A US49812600 A US 49812600A US RE37982 E USRE37982 E US RE37982E
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power source
bonding pads
electrically
protection device
integrated circuit
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US09/498,126
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Ta-Lee Yu
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Winbond Electronics Corp
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Winbond Electronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • This invention relates to an integrated circuit, more particularly to a method for preventing electrostatic discharge failure in an integrated circuit package.
  • VLSI circuit packages make rapid progress to high pin counts and narrow pin pitch with increasing input/output signals by the trend of higher integrated function.
  • ESD electrostatic discharge
  • the possibility of suffer from electrostatic discharge (ESD) failure which is due to electrostatic discharge stressing of the non-wired pin of the integrated circuit package, is increasing. Therefore, the ESD is considered a major reliability threat to integrated circuit technologies.
  • little attention has been paid to the destruction mechanism of non-wired pin so far.
  • the main objective of the present invention is to provide a method of preventing electrostatic discharge failure in an integrated circuit package.
  • a method for preventing electrostatic discharge failure in an integrated circuit package.
  • the integrated circuit package includes a semiconductor chip, bonding pads on the semiconductor chip, a metal lead frame contacting electrically with the semiconductor chip, a plurality of wired pins wire-bonded respectively to the bonding pads, and at least one non-wired pin.
  • the electrostatic discharge failure is due to electrostatic discharge stressing of the non-wired pin.
  • the method comprises the step of wire-bonding the non-wired pin to the metal lead frame.
  • FIG. 1 is a schematic plan view illustrating the connection between a metal lead frame and a non-wired pin of an integrated circuit package in accordance with the present invention
  • FIG. 2 is a schematic circuit diagram illustrating one type of power-supply electrostatic discharge protected device connected to the non-wired pin of the integrated circuit package which has a semiconductor chip having an N-substrate;
  • FIG. 3 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2;
  • FIG. 4 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wire pin of the integrated circuit package of FIG. 2;
  • FIG. 5 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2;
  • FIG. 6 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2;
  • FIG. 7 is a schematic circuit diagram similar to FIG. 2, the integrated circuit package having a semiconductor chip which has a P-substrate.
  • FIG. 1 shows an integrated circuit package 1 which includes a semiconductor chip 10 , bonding pads 11 on the semiconductor chip 10 , a metal lead frame 12 contacting electrically with the semiconductor chip 10 , a plurality of wired pins (WP) wire-bonded respectively to the bonding pads 11 , and at least one non-wired pin (NW).
  • WP wired pins
  • NW non-wired pin
  • the non-wired pin is wire-bonded to the metal lead frame 12 .
  • the metal lead frame 12 is connected electrically to one of the bonding pads 11 which is adapted to be connected electrically to a first power source via the semiconductor chip 10 .
  • the semiconductor chip 10 has an N-substrate with an inherent resistance of about 5 ⁇ , and the first power source is a positive power source.
  • a power-supply electrostatic-discharge protection device 2 is connected electrically to said one of the bonding pads 11 for discharging of current that results from electrostatic discharge stressing of the non-wired pin.
  • the protection device 2 includes a field effect transistor (T) which has a drain connected electrically to said one of the bonding pads 11 , a source adapted to be connected electrically to a second power source and a gate connected electrically to the source thereof.
  • the second power source is grounded. Since the current that results from electrostatic discharge stressing of the non-wired pin (NW) is discharged through the protection device 2 , destruction of the adjacent wired pin (WP) that is adjacent to the non-wired pin (NW) and this caused by the ESD stressing to the non-wired pin (NW) is thus prevented.
  • FIG. 3 shows the relationship between another type of power-supply electrostatic discharge protection device ( 2 A) and the non-wired pin (NW′) of the integrated circuit package.
  • the power-supply electrostatic discharge protection device ( 2 A) of FIG. 3 include a capacitor (C) which may be a build-in capacitor or an externally-connected capacitor.
  • the capacitor (C) has a first terminal connected electrically to one of the bonding pads ( 11 A) that is adapted to be connected electrically to a first power source, and a second terminal adapted to be connected electrically to a second power source.
  • the first power source is a positive power source, while the second power source is grounded. It should be appreciated that the capacitance of the capacitor (C) should be relatively large.
  • FIG. 4 shows the relationship between another type of power-supply electrostatic discharge protection device ( 2 B) and the non-wired pin (NW′′) of the integrated circuit package.
  • the power-supply electrostatic discharge protection device ( 2 B) of FIG. 4 includes a diode (D) which has a cathode connected electrically to one of the bonding pads ( 11 B) that is adapted to be connected electrically to a first power source, and an anode adapted to be connected electrically to a second power source.
  • the first power source is a positive power source, while the second power source is grounded.
  • FIG. 5 shows the relationship between another type of power-supply electrostatic discharge protection device ( 2 C) and the non-wired pin (NW′′′) of the integrated circuit package.
  • the power-supply electrostatic discharge protection device ( 2 C) of FIG. 5 includes a silicon-controlled-rectifier.
  • the silicon-controlled-rectifier includes a first transistor (BJT 1 ) having an emitter connected electrically to one of the bonding pads ( 11 C) that is adapted to be connected electrically to a first power source, a base adapted to be connected electrically to said one of the bonding pads ( 11 C) via a first resistor (R 1 ), and a collector adapted to be connected electrically to a second power source via a second resistor (R 2 ), and a second transistor (BJT 2 ) having a collector connected electrically to the base of the first transistor (BJT 1 ), a base connected electrically to the collector of the first transistor (BJT 1 ), and an emitter adapted to be connected electrically to the second power source.
  • the first power source is a positive power source
  • the second power source is granulated.
  • FIG. 6 shows the relationship between another type of power-supply electrostatic discharge protection device ( 2 D) and the non-wired pin (NW′′′′) of the integrated circuit package.
  • the power-supply electrostatic discharge protection device ( 2 D) of FIG. 6 includes a field device (FD) which has a drain connected electrically to one of the bonding pads ( 11 D) that is adapted to be connected electrically to a first power source, a source adapted to be connected electrically to a second power source, and a gate connected electrically to the drain thereof.
  • the first power source is a positive power source
  • the second power source is grounded.
  • the metal lead frame ( 12 E) is connected electrically to one of the bonding pads ( 11 E) which is adapted to be connected electrically to a first power source via the semiconductor chip ( 10 E).
  • the semiconductor chip ( 10 E) has a P-substrate with an inherent resistance of about 5 ⁇ , and the first power source is grounded.
  • a power-supply electrostatic-discharge protection device ( 2 E) is connected electrically to said one of the bonding pads ( 11 E) for discharging of current that results from electrostatic discharge stressing of the non-wired pin.
  • the protection device ( 2 E) includes a field effect transistor (TE) which has a drain connected electrically to said one of the bonding pads ( 11 E), a source adapted to be connected electrically to a second power source and a gate connected electrically to the drain thereof.
  • the second power source is a positive power source. Since the current that results from electrostatic discharge stressing of the non-wired pin (NW′′′′′) is discharged through the protection device ( 2 E), destruction of the adjacent wired pin (not shown) that is adjacent to the non-wired pin (NW′′′′′) and that is caused by the ESD stressing to the non-wired pin (NW′′′′′) is thus prevented.

Abstract

An integrated circuit package includes a semiconductor chip, bonding pads on the semiconductor chip, a metal lead frame containing electrically with the semiconductor chip, a plurality of wired pins wire-bonded respectively to the bonding pads, and at least one non-wired pin. The non-wired pin is wire-bonded to the metal lead frame to prevent electrostatic discharge failure of the integrated circuit package due to electrostatic discharge stressing of the non-wired pin.

Description

CROSS REFERENCE TO RELATED APPLICATIONS
U.S. Ser. No. 08/643,355, entitled “Method for Preventing Electrostatic Discharge Failure in an Integrated Circuit Package” filed May 6, 1996.
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to an integrated circuit, more particularly to a method for preventing electrostatic discharge failure in an integrated circuit package.
2. Description of the Related Art
The trend of very large-scale integrated (VLSI) circuit packages is toward smaller dimension and higher density. Also, VLSI circuit packages make rapid progress to high pin counts and narrow pin pitch with increasing input/output signals by the trend of higher integrated function. With the increasing of pin count, the possibility of suffer from electrostatic discharge (ESD) failure, which is due to electrostatic discharge stressing of the non-wired pin of the integrated circuit package, is increasing. Therefore, the ESD is considered a major reliability threat to integrated circuit technologies. However, little attention has been paid to the destruction mechanism of non-wired pin so far. Thus, there is a need to provide a method which can prevent electrostatic discharge failure in an integrated circuit package.
SUMMARY OF THE INVENTION
The main objective of the present invention is to provide a method of preventing electrostatic discharge failure in an integrated circuit package.
According to the present invention, a method is provided for preventing electrostatic discharge failure in an integrated circuit package. The integrated circuit package includes a semiconductor chip, bonding pads on the semiconductor chip, a metal lead frame contacting electrically with the semiconductor chip, a plurality of wired pins wire-bonded respectively to the bonding pads, and at least one non-wired pin. The electrostatic discharge failure is due to electrostatic discharge stressing of the non-wired pin. The method comprises the step of wire-bonding the non-wired pin to the metal lead frame.
BRIEF DESCRIPTION OF THE DRAWINGS
Other features and advantages of the present invention will become apparent in the following detailed description of the preferred embodiments, with reference to the accompanying drawings, of which:
FIG. 1 is a schematic plan view illustrating the connection between a metal lead frame and a non-wired pin of an integrated circuit package in accordance with the present invention;
FIG. 2 is a schematic circuit diagram illustrating one type of power-supply electrostatic discharge protected device connected to the non-wired pin of the integrated circuit package which has a semiconductor chip having an N-substrate;
FIG. 3 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2;
FIG. 4 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wire pin of the integrated circuit package of FIG. 2;
FIG. 5 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2;
FIG. 6 is a schematic circuit diagram illustrating another type of power-supply electrostatic discharge protection device connected to the non-wired pin of the integrated circuit package of FIG. 2; and
FIG. 7 is a schematic circuit diagram similar to FIG. 2, the integrated circuit package having a semiconductor chip which has a P-substrate.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
FIG. 1 shows an integrated circuit package 1 which includes a semiconductor chip 10, bonding pads 11 on the semiconductor chip 10, a metal lead frame 12 contacting electrically with the semiconductor chip 10, a plurality of wired pins (WP) wire-bonded respectively to the bonding pads 11, and at least one non-wired pin (NW).
In the method of the present invention, the non-wired pin (NW) is wire-bonded to the metal lead frame 12. As best shown in FIG. 2, the metal lead frame 12 is connected electrically to one of the bonding pads 11 which is adapted to be connected electrically to a first power source via the semiconductor chip 10. It should be noted that, in the present embodiment, the semiconductor chip 10 has an N-substrate with an inherent resistance of about 5Ω, and the first power source is a positive power source. A power-supply electrostatic-discharge protection device 2 is connected electrically to said one of the bonding pads 11 for discharging of current that results from electrostatic discharge stressing of the non-wired pin. The protection device 2 includes a field effect transistor (T) which has a drain connected electrically to said one of the bonding pads 11, a source adapted to be connected electrically to a second power source and a gate connected electrically to the source thereof. In the present embodiment, the second power source is grounded. Since the current that results from electrostatic discharge stressing of the non-wired pin (NW) is discharged through the protection device 2, destruction of the adjacent wired pin (WP) that is adjacent to the non-wired pin (NW) and this caused by the ESD stressing to the non-wired pin (NW) is thus prevented.
FIG. 3 shows the relationship between another type of power-supply electrostatic discharge protection device (2A) and the non-wired pin (NW′) of the integrated circuit package. The power-supply electrostatic discharge protection device (2A) of FIG. 3 include a capacitor (C) which may be a build-in capacitor or an externally-connected capacitor. The capacitor (C) has a first terminal connected electrically to one of the bonding pads (11A) that is adapted to be connected electrically to a first power source, and a second terminal adapted to be connected electrically to a second power source. In the present embodiment, the first power source is a positive power source, while the second power source is grounded. It should be appreciated that the capacitance of the capacitor (C) should be relatively large.
FIG. 4 shows the relationship between another type of power-supply electrostatic discharge protection device (2B) and the non-wired pin (NW″) of the integrated circuit package. The power-supply electrostatic discharge protection device (2B) of FIG. 4 includes a diode (D) which has a cathode connected electrically to one of the bonding pads (11B) that is adapted to be connected electrically to a first power source, and an anode adapted to be connected electrically to a second power source. In the present embodiment, the first power source is a positive power source, while the second power source is grounded.
FIG. 5 shows the relationship between another type of power-supply electrostatic discharge protection device (2C) and the non-wired pin (NW′″) of the integrated circuit package. The power-supply electrostatic discharge protection device (2C) of FIG. 5 includes a silicon-controlled-rectifier. The silicon-controlled-rectifier includes a first transistor (BJT1) having an emitter connected electrically to one of the bonding pads (11C) that is adapted to be connected electrically to a first power source, a base adapted to be connected electrically to said one of the bonding pads (11C) via a first resistor (R1), and a collector adapted to be connected electrically to a second power source via a second resistor (R2), and a second transistor (BJT2) having a collector connected electrically to the base of the first transistor (BJT1), a base connected electrically to the collector of the first transistor (BJT1), and an emitter adapted to be connected electrically to the second power source. In the present embodiment, the first power source is a positive power source, while the second power source is granulated.
FIG. 6 shows the relationship between another type of power-supply electrostatic discharge protection device (2D) and the non-wired pin (NW″″) of the integrated circuit package. The power-supply electrostatic discharge protection device (2D) of FIG. 6 includes a field device (FD) which has a drain connected electrically to one of the bonding pads (11D) that is adapted to be connected electrically to a first power source, a source adapted to be connected electrically to a second power source, and a gate connected electrically to the drain thereof. In the present embodiment, the first power source is a positive power source, while the second power source is grounded.
Referring now to FIG. 7, the metal lead frame (12E) is connected electrically to one of the bonding pads (11E) which is adapted to be connected electrically to a first power source via the semiconductor chip (10E). It should be noted that, in the present embodiment, the semiconductor chip (10E) has a P-substrate with an inherent resistance of about 5Ω, and the first power source is grounded. A power-supply electrostatic-discharge protection device (2E) is connected electrically to said one of the bonding pads (11E) for discharging of current that results from electrostatic discharge stressing of the non-wired pin. The protection device (2E) includes a field effect transistor (TE) which has a drain connected electrically to said one of the bonding pads (11E), a source adapted to be connected electrically to a second power source and a gate connected electrically to the drain thereof. In the present embodiment, the second power source is a positive power source. Since the current that results from electrostatic discharge stressing of the non-wired pin (NW′″″) is discharged through the protection device (2E), destruction of the adjacent wired pin (not shown) that is adjacent to the non-wired pin (NW′″″) and that is caused by the ESD stressing to the non-wired pin (NW′″″) is thus prevented.
While the present invention has been described in connection with what is considered the most practical and preferred embodiments, it is understood that this invention is not limited to the disclosed embodiments, but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.

Claims (31)

I claim:
1. A method for preventing electrostatic discharge failure in an integrated circuit package which includes a semiconductor chip, bonding pads on the semiconductor chip, a metal lead frame contacting electrically with the semiconductor chip, a plurality of wired pins wire-bonded respectively to the bonding pads, and at least one non-wired pin, the electrostatic discharge failure being due to electrostatic discharge stressing of the non-wired pin, said method comprising the step of:
wire-bonding the non-wired pin to the metal lead frame.
2. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to the lead frame through the semiconductor chip for discharging of current that results from electrostatic discharge stressing of the non-wired pin.
3. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to one of the bonding pads that is for connecting electrically to a first power source, said protection device including a field effect transistor which has a drain connected electrically to said one of the bonding pads, a source for connecting electrically to a second power source and a gate connected electrically to said source thereof.
4. A method as claimed in claim 3, wherein said first power source is a positive power source, while said second power source is grounded.
5. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to one of the bonding pads that is for connecting electrically to a first power source, said protection device including a capacitor which has a first terminal connected electrically to said one of the bonding pads, and a second terminal for connecting electrically to a second power source.
6. A method as claimed in claim 5, wherein said first power source is a positive power source, while said second power source is grounded.
7. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to one of the bonding pads that is for connecting electrically to a first power source, said protection device including a diode which has a cathode connected electrically to said one of the bonding pads, and anode for connecting electrically to a second power source.
8. A method as claimed in claim 7, wherein said first power source is a positive power source, while said second power source is grounded.
9. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to one of the bonding pads that is for connecting electrically to a first power source, said protection device including a first transistor having an emitter connected electrically to said one of the bonding pads via a first resistor, and a collector for connecting electrically to a second power source via a second resistor, and a second transistor having a collector connected electrically to the base of the first transistor, a base connected electrically to the collector of the first transistor, and an emitter for connecting electrically to the second power source.
10. A method as claimed in claim 9, wherein said first power source is a positive power source, while said second power source is grounded.
11. A method as claimed in claim 1, further comprising the step of connecting electrically a power-supply electrostatic-discharge protection device to one of the bonding pads that is for connecting electrically to a first power source, said protection device including a field device which has a drain connected electrically to said one of the bonding pads, a source for connecting electrically to a second power source, and a gate connected electrically to the drain thereof.
12. A method as claimed in claim 11, wherein said first power source is a positive power source, while said second power source is grounded.
13. A method as claimed in claim 11, wherein said first power source is grounded, while said second power source is a positive power source.
14. A method for preventing electrostatic discharge failure in an integrated circuit package which includes a semiconductor chip with a substrate, a plurality of bonding pads on the semiconductor chip, a plurality of wired pins wire-bonded to the bonding pads, and at least one non-wired pin, the electrostatic discharge failure being due to electrostatic discharge stressing of the non-wired pin, said method comprising the step of:
providing an electrical coupling between the non-wired pin and the substrate of the semiconductor chip.
15. A method as claimed in claim 14, further comprising the steps of:
coupling electrically a first power source node to the substrate; and
coupling electrically an electrostatic-discharge protection device between the first power source node and a second power source node.
16. A method as claimed in claim 15, wherein the protection device includes a capacitor coupled between the first and second power source nodes.
17. A method as claimed in claim 16, wherein the capacitor is a built-in capacitor.
18. A method as claimed in claim 15, wherein one of the first and second power source nodes is a positive power source node, and the other one of the first and second power source nodes is a ground node.
19. A method as claimed in claim 15, wherein the protection device includes at least an element selected from the group of a diode, a transistor, a field device and a silicon-controlled-rectifier.
20. A method as claimed in claim 15, further comprising the step of coupling electrically the protection device to one of the bonding pads.
21. A method as claimed in claim 14, wherein the substrate is either one of an N-type substrate and a P-type substrate.
22. A method for preventing electrostatic discharge failure in an integrated circuit package which includes a semiconductor chip, bonding pads on the semiconductor chip, a lead frame for holding the semiconductor chip, a plurality of wired pins wire-bonded to the bonding pads, and at least one non-wired pin, said method comprising the step of:
wire-bonding the non-wired pin into the lead frame.
23. An integrated circuit package protected against electrostatic discharge failure, said integrated circuit package comprising a semiconductor chip, a plurality of bonding pads on said semiconductor chip, a plurality of wired pins wire-bonded to said bonding pads, and at least one non-wired pin coupled electrically to a first power-source node.
24. An integrated circuit package as claimed in claim 23, further comprising an electrostatic-discharge protection device coupled between said first power source node and a second power source node.
25. An integrated circuit package as claimed in claim 23, wherein said semiconductor chip has a substrate, and said first power source node is coupled electrically to said substrate.
26. An integrated circuit package as claimed in claim 23, wherein said first power source node is coupled electrically to one of said bonding pads.
27. An integrated circuit package as claimed in claim 24, wherein said protection device includes a capacitor.
28. An integrated circuit package as claimed in claim 27, wherein said capacitor is a built-in capacitor.
29. An integrated circuit package as claimed in claim 24, wherein said protection device includes at least an element selected from the group of a diode, a transistor, a field device and a silicon-controlled-rectifier.
30. An integrated circuit package as claimed in claim 23, wherein said first power source node is a positive power-source node.
31. An integrated circuit package as claimed in claim 23, wherein said first power source node is a ground node.
US09/498,126 1996-05-06 2000-02-02 Method for preventing electrostatic discharge failure in an integrated circuit package Expired - Fee Related USRE37982E1 (en)

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