USH560H - Method of manufacturing dislocation and etch channel free quartz resonator blanks - Google Patents
Method of manufacturing dislocation and etch channel free quartz resonator blanks Download PDFInfo
- Publication number
- USH560H USH560H US07/091,686 US9168687A USH560H US H560 H USH560 H US H560H US 9168687 A US9168687 A US 9168687A US H560 H USH560 H US H560H
- Authority
- US
- United States
- Prior art keywords
- dislocation
- free
- quartz
- cultured
- quartz stone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010453 quartz Substances 0.000 title claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004575 stone Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004854 X-ray topography Methods 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/18—Quartz
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Definitions
- This invention relates in general to a method of manufacturing dislocation and etch-channel-free quartz resonator blanks and in particular to a method of manufacturing dislocation and etch channel free quartz resonator blanks from a cultured quartz stone.
- the quartz blanks will come from the Z-growth region of a cultured quartz stone. This is because of fewer impurities in the Z-region.
- Z-seed plates are generally used for the next generation growth of quartz and are usually cut from the Z-region even though the Z-plate could have been cut from any region of a cultured quartz stone.
- the Z-region is also structurally sounder than any of the other regions of the cultured quartz stone.
- the general object of this invention is to provide a method of making a high stability quartz crystal resonator blank.
- a more particular object of the invention is to provide such a method of making a dislocation and etch-channel-free blank from a cultured quartz stone.
- Another object of the invention is to provide such a method wherein dislocations and resultant etch channels, caused by dislocations in the seed plate can be eliminated.
- the dislocation and etch-channel free areas of the cultured quartz stone are visualized by a suitable means as for example, X-ray topography, the seed plates cut from the dislocation-free areas, quartz grown from the dislocation-free seed plates, and the dislocation-free quartz resonator blanks then cut from the quartz.
- the drawing is a schematic of a Y-cut section of cultured quartz as visualized by X-ray topography or by the etching of Y-cut test sections.
- 1 shows growth sector and seed boundaries
- 2 shows mineralizer-etched cavities
- 3 shows dislocations
- 4 shows possible Z-plate seed locations.
- the seed area is enlarged to show detail. Since dislocation directions are roughly parallel to the growth direction in each growth sector, areas close to the sector boundaries are free of dislocations. Prospective Z-seed plate areas are shown for each sector.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Dislocation and etch channel-free quartz resonator blanks are made from a cultured quartz stone by visualizing the dislocation-free areas of the cultured quartz stone by X-ray topography, cutting seed plates for the next generation of crystal growth from the dislocation-free areas of the cultured quartz stone, growing dislocation free quartz from said seed plates using conventional growth techniques, and cutting dislocation-free quartz resonator blanks from said dislocation-free quartz.
Description
The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to me of any royalty thereon.
This invention relates in general to a method of manufacturing dislocation and etch-channel-free quartz resonator blanks and in particular to a method of manufacturing dislocation and etch channel free quartz resonator blanks from a cultured quartz stone.
It is generally accepted that for resonator applications, the quartz blanks will come from the Z-growth region of a cultured quartz stone. This is because of fewer impurities in the Z-region. Z-seed plates are generally used for the next generation growth of quartz and are usually cut from the Z-region even though the Z-plate could have been cut from any region of a cultured quartz stone. The Z-region is also structurally sounder than any of the other regions of the cultured quartz stone.
However, the dislocations in the Z-region run roughly parallel (within 15°) to Z. Therefore, these dislocations run roughly perpendicular to the Z-plate.
The general object of this invention is to provide a method of making a high stability quartz crystal resonator blank. A more particular object of the invention is to provide such a method of making a dislocation and etch-channel-free blank from a cultured quartz stone. Another object of the invention is to provide such a method wherein dislocations and resultant etch channels, caused by dislocations in the seed plate can be eliminated.
It has now been found that the aforementioned objects can be attained by taking the seed plates from the dislocation-free areas of a cultured quartz stone.
More particularly, according to the invention, the dislocation and etch-channel free areas of the cultured quartz stone are visualized by a suitable means as for example, X-ray topography, the seed plates cut from the dislocation-free areas, quartz grown from the dislocation-free seed plates, and the dislocation-free quartz resonator blanks then cut from the quartz.
The drawing is a schematic of a Y-cut section of cultured quartz as visualized by X-ray topography or by the etching of Y-cut test sections.
Referring to the drawing, 1 shows growth sector and seed boundaries, 2 shows mineralizer-etched cavities, 3 shows dislocations, and 4 shows possible Z-plate seed locations. The seed area is enlarged to show detail. Since dislocation directions are roughly parallel to the growth direction in each growth sector, areas close to the sector boundaries are free of dislocations. Prospective Z-seed plate areas are shown for each sector.
As seen in the drawing, there are areas in either the X-or Z-growth sectors which should be free of dislocations. Seed plates cut from these areas should not produce mineralizer-etched cavities or dislocations/etch channels in the Z-growth regions during growth.
I wish it to be understood that I do not desire to be limited to the exact details as described for obvious modifications will occur to a person skilled in the art.
Claims (7)
1. Method of manufacturing dislocation and etch channel-free quartz resonator blanks from a non dislocation-free quartz stone, comprising locating dislocation and etch channel-free areas in the x and z regions of the non dislocation-free quartz stone that are outside of ±15° from the normals to the original seed boundary using y-test plates, cutting seed plates for the next generation of crystal growth from the dislocation-free areas of the non disclosure-free quartz stone, and growing dislocation free quartz from said seed plates using conventional cultured quartz growth techniques.
2. Method according to claim 1 wherein said quartz stone is a cultured quartz stone.
3. Method according to claim 2 wherein the seed plate is a Z-seed plate.
4. Method according to claim 3 wherein the Z-seed plate is cut out of the Z-growth region of the cultured quartz stone.
5. Method according to claim 3 wherein the Z-seed plate is cut out of the X-growth region of the cultured quartz stone.
6. Method according to claim 2 wherein the dislocation-free areas of the cultured quartz are visualized by X-ray topography.
7. Method according to claim 2 wherein the dislocation-free areas of the cultured quartz stone are located by the etching of Y-cut test sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/091,686 USH560H (en) | 1987-08-31 | 1987-08-31 | Method of manufacturing dislocation and etch channel free quartz resonator blanks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/091,686 USH560H (en) | 1987-08-31 | 1987-08-31 | Method of manufacturing dislocation and etch channel free quartz resonator blanks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USH560H true USH560H (en) | 1988-12-06 |
Family
ID=22229139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US07/091,686 Abandoned USH560H (en) | 1987-08-31 | 1987-08-31 | Method of manufacturing dislocation and etch channel free quartz resonator blanks |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USH560H (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997022738A1 (en) * | 1995-12-20 | 1997-06-26 | Motorola Inc. | St-cut and at-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3291575A (en) | 1965-01-27 | 1966-12-13 | Sawyer Res Products Inc | Method for growth of pegmatitic quartz crystals in a controlled axial direction |
| US3576608A (en) | 1967-10-16 | 1971-04-27 | Aiken Ind Inc | Hydrothermal synthesis of quartz utilizing x-cut seed plate elongated on the crystallographic z axis |
| US3917506A (en) | 1971-08-30 | 1975-11-04 | Motorola Inc | Method of growing quartz crystals and seed plate therefor |
| US3976535A (en) | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
| US4255228A (en) | 1979-01-05 | 1981-03-10 | The United States Of America As Represented By The Secretary Of The Army | Method of growing quartz |
| US4576808A (en) | 1983-12-28 | 1986-03-18 | The United States Of America As Represented By The Secretary Of The Air Force | Quartz growth on X-seeds |
-
1987
- 1987-08-31 US US07/091,686 patent/USH560H/en not_active Abandoned
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3291575A (en) | 1965-01-27 | 1966-12-13 | Sawyer Res Products Inc | Method for growth of pegmatitic quartz crystals in a controlled axial direction |
| US3576608A (en) | 1967-10-16 | 1971-04-27 | Aiken Ind Inc | Hydrothermal synthesis of quartz utilizing x-cut seed plate elongated on the crystallographic z axis |
| US3917506A (en) | 1971-08-30 | 1975-11-04 | Motorola Inc | Method of growing quartz crystals and seed plate therefor |
| US3976535A (en) | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
| US4255228A (en) | 1979-01-05 | 1981-03-10 | The United States Of America As Represented By The Secretary Of The Army | Method of growing quartz |
| US4576808A (en) | 1983-12-28 | 1986-03-18 | The United States Of America As Represented By The Secretary Of The Air Force | Quartz growth on X-seeds |
Non-Patent Citations (1)
| Title |
|---|
| Barns et al., "Production and Perfection of `Z-Face` Quartz", J. Crys. Grh, 34 (1976), 189-197. |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997022738A1 (en) * | 1995-12-20 | 1997-06-26 | Motorola Inc. | St-cut and at-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
| US5714005A (en) * | 1995-12-20 | 1998-02-03 | Motorola Inc. | ST-cut and AT-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| AS | Assignment |
Owner name: UNITED STATES OF AMERICA, THE, AS REPRESENTED BY T Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:GUALTIERI, JOHN G.;REEL/FRAME:005031/0578 Effective date: 19870826 |