USB563722I5 - - Google Patents

Info

Publication number
USB563722I5
USB563722I5 US56372275A USB563722I5 US B563722 I5 USB563722 I5 US B563722I5 US 56372275 A US56372275 A US 56372275A US B563722 I5 USB563722 I5 US B563722I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US05/563,722 priority Critical patent/US3990925A/en
Publication of USB563722I5 publication Critical patent/USB563722I5/en
Priority to CA246,348A priority patent/CA1042115A/en
Priority to GB12359/76A priority patent/GB1537306A/en
Priority to IT21687/76A priority patent/IT1058695B/en
Priority to JP51033693A priority patent/JPS51121266A/en
Priority to FR7609221A priority patent/FR2306529A1/en
Priority to DE2613490A priority patent/DE2613490C3/en
Application granted granted Critical
Publication of US3990925A publication Critical patent/US3990925A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
US05/563,722 1975-03-31 1975-03-31 Removal of projections on epitaxial layers Expired - Lifetime US3990925A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US05/563,722 US3990925A (en) 1975-03-31 1975-03-31 Removal of projections on epitaxial layers
CA246,348A CA1042115A (en) 1975-03-31 1976-02-23 Removal of projections on epitaxial layers
GB12359/76A GB1537306A (en) 1975-03-31 1976-03-26 Processing epitaxial layers
IT21687/76A IT1058695B (en) 1975-03-31 1976-03-29 PROCEDURE TO REMOVE PROJECTS FROM THE SURFACE OF A SEMICONDUCTIVE LAYER
JP51033693A JPS51121266A (en) 1975-03-31 1976-03-29 Method of removing projected portion of epitaxial layer
FR7609221A FR2306529A1 (en) 1975-03-31 1976-03-30 PROCESS FOR REMOVING PROJECTIONS FROM EPITAXIAL LAYERS OF SEMICONDUCTORS
DE2613490A DE2613490C3 (en) 1975-03-31 1976-03-30 Method for removing protrusions from the surface of a semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/563,722 US3990925A (en) 1975-03-31 1975-03-31 Removal of projections on epitaxial layers

Publications (2)

Publication Number Publication Date
USB563722I5 true USB563722I5 (en) 1976-01-13
US3990925A US3990925A (en) 1976-11-09

Family

ID=24251640

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/563,722 Expired - Lifetime US3990925A (en) 1975-03-31 1975-03-31 Removal of projections on epitaxial layers

Country Status (7)

Country Link
US (1) US3990925A (en)
JP (1) JPS51121266A (en)
CA (1) CA1042115A (en)
DE (1) DE2613490C3 (en)
FR (1) FR2306529A1 (en)
GB (1) GB1537306A (en)
IT (1) IT1058695B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023775A1 (en) * 1979-07-11 1981-02-11 Fujitsu Limited A method of manufacturing a semiconductor device

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate
JPS5527686A (en) * 1978-08-21 1980-02-27 Sony Corp Projection eliminating device
JPS56114315A (en) * 1980-02-14 1981-09-08 Fujitsu Ltd Manufacture of semiconductor device
JPS57115824A (en) * 1981-01-10 1982-07-19 Nec Home Electronics Ltd Removing epitaxial layer mound
DE3524765A1 (en) * 1985-07-11 1987-01-22 Licentia Gmbh METHOD FOR PRODUCING A TRANSPARENT PHOTOCATHOD
JPS62128516A (en) * 1985-11-29 1987-06-10 Shin Etsu Handotai Co Ltd Removing method for projection of semiconductor wafer
DE3721940A1 (en) * 1987-07-02 1989-01-12 Ibm Deutschland REMOVAL OF PARTICLES FROM SURFACES OF SOLID BODY BY LASER Bombardment
JP3060714B2 (en) * 1992-04-15 2000-07-10 日本電気株式会社 Manufacturing method of semiconductor integrated circuit
JP2011096935A (en) * 2009-10-30 2011-05-12 Fujifilm Corp Epitaxial wafer, method of manufacturing epitaxial wafer, light emitting element wafer, method of manufacturing light emitting element wafer, and light emitting element
FR2994615A1 (en) * 2012-08-14 2014-02-21 Commissariat Energie Atomique Method for planarizing epitaxial layer of structure to form photovoltaic cell in e.g. photovoltaic fields, involves removing masking layer to obtain surface of epitaxial layer whose protuberances exhibit height lower than height threshold
EP3682866A4 (en) 2017-09-14 2021-06-16 Shin-Etsu Chemical Co., Ltd. Method for preparing oil-in-water type emulsion composition, and cosmetic material
JP2019090956A (en) * 2017-11-16 2019-06-13 旭化成エレクトロニクス株式会社 Method of manufacturing optical element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1652225A1 (en) * 1967-08-21 1971-04-22 Halbleiterwerk Frankfurt Oder Process for removing and polishing semiconductor bodies, in particular silicon single crystal wafers
US3656671A (en) * 1970-03-16 1972-04-18 Ibm Frangible projection removal
US3699644A (en) * 1971-01-04 1972-10-24 Sylvania Electric Prod Method of dividing wafers
US3783044A (en) * 1971-04-09 1974-01-01 Motorola Inc Photoresist keys and depth indicator
US3718514A (en) * 1971-05-28 1973-02-27 Bell Telephone Labor Inc Removal of projections on epitaxial layers
BE789090A (en) * 1971-09-22 1973-01-15 Western Electric Co SEMICONDUCTOR ATTACK METHOD AND SOLUTION
US3838501A (en) * 1973-02-09 1974-10-01 Honeywell Inf Systems Method in microcircuit package assembly providing nonabrasive, electrically passive edges on integrated circuit chips

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0023775A1 (en) * 1979-07-11 1981-02-11 Fujitsu Limited A method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
IT1058695B (en) 1982-05-10
CA1042115A (en) 1978-11-07
DE2613490B2 (en) 1978-04-13
FR2306529B1 (en) 1978-05-19
GB1537306A (en) 1978-12-29
JPS5533176B2 (en) 1980-08-29
JPS51121266A (en) 1976-10-23
FR2306529A1 (en) 1976-10-29
DE2613490C3 (en) 1981-10-08
DE2613490A1 (en) 1976-10-14
US3990925A (en) 1976-11-09

Similar Documents

Publication Publication Date Title
FR2324960B1 (en)
FI763494A (en)
USB563722I5 (en)
JPS5527378B2 (en)
JPS555471B2 (en)
JPS51108418U (en)
JPS561737Y2 (en)
JPS51106806U (en)
JPS51127855U (en)
JPS5292719U (en)
CS173042B1 (en)
JPS5195624A (en)
JPS5238610U (en)
CH601723A5 (en)
CH596331A5 (en)
CH601163A5 (en)
CH600625A5 (en)
CH600623A5 (en)
CH600615A5 (en)
CH590099A5 (en)
CH600318A5 (en)
CH600191A5 (en)
CH599858A5 (en)
CH602111A5 (en)
CH599786A5 (en)