USB561732I5 - - Google Patents

Info

Publication number
USB561732I5
USB561732I5 US56173275A USB561732I5 US B561732 I5 USB561732 I5 US B561732I5 US 56173275 A US56173275 A US 56173275A US B561732 I5 USB561732 I5 US B561732I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US392698A external-priority patent/US3920495A/en
Priority to US05/561,732 priority Critical patent/US3991460A/en
Application filed filed Critical
Publication of USB561732I5 publication Critical patent/USB561732I5/en
Priority to IN242/CAL/1976A priority patent/IN143215B/en
Priority to CA246,903A priority patent/CA1042534A/en
Priority to GB10923/76A priority patent/GB1500473A/en
Priority to BE1007270A priority patent/BE839851A/xx
Priority to FR7608368A priority patent/FR2305856A1/fr
Priority to DE19762612551 priority patent/DE2612551A1/de
Priority to JP51032074A priority patent/JPS51122390A/ja
Publication of US3991460A publication Critical patent/US3991460A/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/964—Roughened surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
US05/561,732 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier Expired - Lifetime US3991460A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US05/561,732 US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier
IN242/CAL/1976A IN143215B (enrdf_load_stackoverflow) 1975-03-25 1976-02-10
CA246,903A CA1042534A (en) 1975-03-25 1976-03-02 Method of making a light activated semiconductor controlled rectifier
GB10923/76A GB1500473A (en) 1975-03-25 1976-03-18 Method of making a light activated semiconductor controlled rectifier
BE1007270A BE839851A (fr) 1975-03-25 1976-03-22 Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere
FR7608368A FR2305856A1 (fr) 1975-03-25 1976-03-23 Methode de fabrication d'un redresseur commande par semiconducteur a activation par la lumiere
DE19762612551 DE2612551A1 (de) 1975-03-25 1976-03-24 Verfahren zur herstellung eines mittels licht steuerbaren halbleiter- gleichrichters
JP51032074A JPS51122390A (en) 1975-03-25 1976-03-25 Optical trigger semiconductor device and method of producing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US392698A US3920495A (en) 1972-04-28 1973-08-29 Method of forming reflective means in a light activated semiconductor controlled rectifier
US05/561,732 US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US392698A Continuation-In-Part US3920495A (en) 1972-04-28 1973-08-29 Method of forming reflective means in a light activated semiconductor controlled rectifier

Publications (2)

Publication Number Publication Date
USB561732I5 true USB561732I5 (enrdf_load_stackoverflow) 1976-02-03
US3991460A US3991460A (en) 1976-11-16

Family

ID=27013994

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/561,732 Expired - Lifetime US3991460A (en) 1973-08-29 1975-03-25 Method of making a light activated semiconductor controlled rectifier

Country Status (1)

Country Link
US (1) US3991460A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207583A (en) 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
US4219833A (en) 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
EP0107357A3 (en) * 1982-09-24 1985-04-10 Energy Conversion Devices, Inc. Apparatus and method for making large area photovoltaic devices incorporating back reflectors
CN115224153A (zh) * 2021-03-31 2022-10-21 浙江晶科能源有限公司 太阳能电池片及其制备方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4131905A (en) * 1977-05-26 1978-12-26 Electric Power Research Institute, Inc. Light-triggered thyristor and package therefore
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
AT390677B (de) * 1986-10-10 1990-06-11 Avl Verbrennungskraft Messtech Sensorelement zur bestimmung von stoffkonzentrationen
EP0446439B1 (de) * 1990-03-12 1996-07-24 Siemens Aktiengesellschaft Thyristor mit reflexionsarmer Lichtzündstruktur
US5169790A (en) * 1990-03-12 1992-12-08 Siemens Aktiengesellschaft Method of making thyristor having low reflection light-triggering structure
US5298733A (en) * 1992-12-10 1994-03-29 Texas Instruments Incorporated Infrared focal plane array with integral slot shield using spin-on epoxy and method of making same
US5962909A (en) * 1996-09-12 1999-10-05 Institut National D'optique Microstructure suspended by a microsupport
US5831266A (en) * 1996-09-12 1998-11-03 Institut National D'optique Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure
US7002188B2 (en) * 2003-08-29 2006-02-21 The Titan Corporation Laser-gated and pumped multi-layer semiconductor power switch with reduced forward losses

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2593447A (en) * 1949-06-27 1952-04-22 Permanente Metals Corp Method and composition for treating aluminum and aluminum alloys
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device
US3107188A (en) * 1960-11-21 1963-10-15 Pacific Semiconductors Inc Process of etching semiconductors and etchant solutions used therefor
US3389457A (en) * 1964-04-03 1968-06-25 Philco Ford Corp Fabrication of semiconductor device
US3466510A (en) * 1967-01-07 1969-09-09 Telefunken Patent Integrated graetz rectifier circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2593447A (en) * 1949-06-27 1952-04-22 Permanente Metals Corp Method and composition for treating aluminum and aluminum alloys
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device
US3107188A (en) * 1960-11-21 1963-10-15 Pacific Semiconductors Inc Process of etching semiconductors and etchant solutions used therefor
US3389457A (en) * 1964-04-03 1968-06-25 Philco Ford Corp Fabrication of semiconductor device
US3466510A (en) * 1967-01-07 1969-09-09 Telefunken Patent Integrated graetz rectifier circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219833A (en) 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4207583A (en) 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
EP0107357A3 (en) * 1982-09-24 1985-04-10 Energy Conversion Devices, Inc. Apparatus and method for making large area photovoltaic devices incorporating back reflectors
CN115224153A (zh) * 2021-03-31 2022-10-21 浙江晶科能源有限公司 太阳能电池片及其制备方法
CN115224153B (zh) * 2021-03-31 2023-09-22 浙江晶科能源有限公司 太阳能电池片及其制备方法

Also Published As

Publication number Publication date
US3991460A (en) 1976-11-16

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