USB480749I5 - - Google Patents

Info

Publication number
USB480749I5
USB480749I5 US48074974A USB480749I5 US B480749 I5 USB480749 I5 US B480749I5 US 48074974 A US48074974 A US 48074974A US B480749 I5 USB480749 I5 US B480749I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7012173A external-priority patent/JPS5020673A/ja
Priority claimed from JP7012073A external-priority patent/JPS5020672A/ja
Application filed filed Critical
Publication of USB480749I5 publication Critical patent/USB480749I5/en
Application granted granted Critical
Publication of US3999207A publication Critical patent/US3999207A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
US05/480,749 1973-01-21 1974-06-19 Field effect transistor with a carrier injecting region Expired - Lifetime US3999207A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JA48-70120 1973-01-21
JP7012173A JPS5020673A (fr) 1973-06-21 1973-06-21
JP7012073A JPS5020672A (fr) 1973-06-21 1973-06-21
JA48-70121 1973-06-21

Publications (2)

Publication Number Publication Date
USB480749I5 true USB480749I5 (fr) 1976-03-09
US3999207A US3999207A (en) 1976-12-21

Family

ID=26411276

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/480,749 Expired - Lifetime US3999207A (en) 1973-01-21 1974-06-19 Field effect transistor with a carrier injecting region

Country Status (4)

Country Link
US (1) US3999207A (fr)
DE (1) DE2429796A1 (fr)
FR (1) FR2234663B1 (fr)
GB (1) GB1471617A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
CA1131801A (fr) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconducteur
DE2842588A1 (de) * 1978-09-29 1980-04-17 Siemens Ag Hochintegrierbares, dynamisches speicherelement
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4322738A (en) * 1980-01-21 1982-03-30 Texas Instruments Incorporated N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
GB8800949D0 (en) * 1988-01-16 1988-02-17 Link Analytical Ltd Junction field effect transistors
US5170229A (en) * 1988-01-16 1992-12-08 Link Analytical Limited Junction field effect transistors with injector region
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
US7378688B1 (en) * 2006-12-29 2008-05-27 Intel Corporation Method and apparatus for a low noise JFET device on a standard CMOS process

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
US3595715A (en) * 1967-06-30 1971-07-27 Philips Corp Method of manufacturing a semiconductor device comprising a junction field-effect transistor
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
US3619737A (en) * 1970-05-08 1971-11-09 Ibm Planar junction-gate field-effect transistors
US3649385A (en) * 1969-03-12 1972-03-14 Hitachi Ltd Method of making a junction type field effect transistor
US3656031A (en) * 1970-12-14 1972-04-11 Tektronix Inc Low noise field effect transistor with channel having subsurface portion of high conductivity
US3663873A (en) * 1965-10-08 1972-05-16 Sony Corp Field effect transistor
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL182022B (nl) * 1952-10-31 Oval Eng Co Ltd Stroommeter met positieve verplaatsing.
US3325654A (en) * 1964-10-09 1967-06-13 Honeywell Inc Fet switching utilizing matching equivalent capacitive means

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663873A (en) * 1965-10-08 1972-05-16 Sony Corp Field effect transistor
US3597287A (en) * 1965-11-16 1971-08-03 Monsanto Co Low capacitance field effect transistor
US3453504A (en) * 1966-08-11 1969-07-01 Siliconix Inc Unipolar transistor
US3595715A (en) * 1967-06-30 1971-07-27 Philips Corp Method of manufacturing a semiconductor device comprising a junction field-effect transistor
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
US3649385A (en) * 1969-03-12 1972-03-14 Hitachi Ltd Method of making a junction type field effect transistor
US3619737A (en) * 1970-05-08 1971-11-09 Ibm Planar junction-gate field-effect transistors
US3656031A (en) * 1970-12-14 1972-04-11 Tektronix Inc Low noise field effect transistor with channel having subsurface portion of high conductivity
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor

Also Published As

Publication number Publication date
GB1471617A (en) 1977-04-27
FR2234663A1 (fr) 1975-01-17
US3999207A (en) 1976-12-21
DE2429796A1 (de) 1975-01-16
FR2234663B1 (fr) 1978-05-26

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