USB421061I5 - - Google Patents

Info

Publication number
USB421061I5
USB421061I5 US421061DD USB421061I5 US B421061 I5 USB421061 I5 US B421061I5 US 421061D D US421061D D US 421061DD US B421061 I5 USB421061 I5 US B421061I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of USB421061I5 publication Critical patent/USB421061I5/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • C30B31/185—Pattern diffusion, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Integrated Circuits (AREA)
US421061D 1964-12-24 Pending USB421061I5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421061A US3390019A (en) 1964-12-24 1964-12-24 Method of making a semiconductor by ionic bombardment

Publications (1)

Publication Number Publication Date
USB421061I5 true USB421061I5 (de)

Family

ID=23669024

Family Applications (2)

Application Number Title Priority Date Filing Date
US421061D Pending USB421061I5 (de) 1964-12-24
US421061A Expired - Lifetime US3390019A (en) 1964-12-24 1964-12-24 Method of making a semiconductor by ionic bombardment

Family Applications After (1)

Application Number Title Priority Date Filing Date
US421061A Expired - Lifetime US3390019A (en) 1964-12-24 1964-12-24 Method of making a semiconductor by ionic bombardment

Country Status (5)

Country Link
US (2) US3390019A (de)
DE (1) DE1544275C3 (de)
GB (1) GB1067926A (de)
NL (1) NL6516624A (de)
SE (1) SE325335B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3510734A (en) * 1967-10-18 1970-05-05 Hughes Aircraft Co Impatt diode
US3520741A (en) * 1967-12-18 1970-07-14 Hughes Aircraft Co Method of simultaneous epitaxial growth and ion implantation
USRE28653E (en) * 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
JPS4915377B1 (de) * 1968-10-04 1974-04-15
GB1280199A (en) * 1968-12-27 1972-07-05 Hitachi Ltd Method for producing semiconductor device utilizing ion implantation
US3604986A (en) * 1970-03-17 1971-09-14 Bell Telephone Labor Inc High frequency transistors with shallow emitters
US3642593A (en) * 1970-07-31 1972-02-15 Bell Telephone Labor Inc Method of preparing slices of a semiconductor material having discrete doped regions
US3663308A (en) * 1970-11-05 1972-05-16 Us Navy Method of making ion implanted dielectric enclosures
US3717790A (en) * 1971-06-24 1973-02-20 Bell Telephone Labor Inc Ion implanted silicon diode array targets for electron beam camera tubes
US3728161A (en) * 1971-12-28 1973-04-17 Bell Telephone Labor Inc Integrated circuits with ion implanted chan stops
US4017887A (en) * 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
US3862930A (en) * 1972-08-22 1975-01-28 Us Navy Radiation-hardened cmos devices and circuits
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device
FR2445617A1 (fr) * 1978-12-28 1980-07-25 Ibm France Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array
US4637836A (en) * 1985-09-23 1987-01-20 Rca Corporation Profile control of boron implant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US3200019A (en) * 1962-01-19 1965-08-10 Rca Corp Method for making a semiconductor device
BE636316A (de) * 1962-08-23 1900-01-01
NL302630A (de) * 1963-01-18 1900-01-01

Also Published As

Publication number Publication date
SE325335B (de) 1970-06-29
DE1544275C3 (de) 1978-10-12
DE1544275A1 (de) 1970-08-13
NL6516624A (de) 1966-06-27
US3390019A (en) 1968-06-25
DE1544275B2 (de) 1973-08-09
GB1067926A (en) 1967-05-10

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