USB105006I5 - - Google Patents

Info

Publication number
USB105006I5
USB105006I5 US10500671A USB105006I5 US B105006 I5 USB105006 I5 US B105006I5 US 10500671 A US10500671 A US 10500671A US B105006 I5 USB105006 I5 US B105006I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP248870A external-priority patent/JPS4918583B1/ja
Priority claimed from JP248770A external-priority patent/JPS4918582B1/ja
Application filed filed Critical
Publication of USB105006I5 publication Critical patent/USB105006I5/en
Application granted granted Critical
Publication of US4007074A publication Critical patent/US4007074A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
US05/105,006 1970-01-09 1971-01-08 Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor Expired - Lifetime US4007074A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JA45-2488 1970-01-09
JP248870A JPS4918583B1 (en) 1970-01-09 1970-01-09
JP248770A JPS4918582B1 (en) 1970-01-09 1970-01-09
JA45-2487 1970-01-09

Publications (2)

Publication Number Publication Date
USB105006I5 true USB105006I5 (en) 1976-03-23
US4007074A US4007074A (en) 1977-02-08

Family

ID=26335862

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/105,006 Expired - Lifetime US4007074A (en) 1970-01-09 1971-01-08 Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor

Country Status (4)

Country Link
US (1) US4007074A (en)
DE (1) DE2100692A1 (en)
FR (1) FR2075325A5 (en)
NL (1) NL7100218A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2356271A1 (en) * 1976-02-06 1978-01-20 Labo Electronique Physique ACCELERATED GROWTH IN THE STEAM PHASE
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
JPS5858317B2 (en) * 1978-06-12 1983-12-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Vapor phase growth method
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
JPS6055478B2 (en) * 1982-10-19 1985-12-05 松下電器産業株式会社 Vapor phase growth method
US4488914A (en) * 1982-10-29 1984-12-18 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
CA1250511A (en) * 1984-10-31 1989-02-28 Rajaram Bhat Technique for the growth of epitaxial compound semiconductor films
IL79612A0 (en) * 1985-08-09 1986-11-30 American Cyanamid Co Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
FR2599558B1 (en) * 1986-05-27 1988-09-02 Labo Electronique Physique METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE, INCLUDING THE DEPOSITION IN VAPOR PHASE OF LAYERS ON A SUBSTRATE
US5445897A (en) * 1989-11-22 1995-08-29 Mitsubishi Kasei Polytec Company Epitaxial wafer and process for producing the same
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
JPH04160100A (en) * 1990-10-25 1992-06-03 Nikko Kyodo Co Ltd Method for epitaxial-growing iii-v compound semiconductor
JP2012248803A (en) * 2011-05-31 2012-12-13 Hitachi Cable Ltd Metal chloride gas generator and metal chloride gas generation method, and hydride vapor phase epitaxial growth apparatus, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light-emitting diode, manufacturing method of nitride semiconductor self-supporting substrate, and nitride semiconductor crystal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (en) * 1959-06-18
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
NL295293A (en) * 1962-07-13
NL6700080A (en) * 1966-01-03 1967-07-04
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide

Also Published As

Publication number Publication date
US4007074A (en) 1977-02-08
FR2075325A5 (en) 1971-10-08
NL7100218A (en) 1971-07-13
DE2100692A1 (en) 1971-07-15

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