US9533882B1 - Diamond-like carbon nanorods and fabrication thereof - Google Patents
Diamond-like carbon nanorods and fabrication thereof Download PDFInfo
- Publication number
- US9533882B1 US9533882B1 US13/070,678 US201113070678A US9533882B1 US 9533882 B1 US9533882 B1 US 9533882B1 US 201113070678 A US201113070678 A US 201113070678A US 9533882 B1 US9533882 B1 US 9533882B1
- Authority
- US
- United States
- Prior art keywords
- catalyst
- carbon
- substrate
- containing gas
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active - Reinstated, expires
Links
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000002073 nanorod Substances 0.000 claims abstract description 35
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 34
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000001338 self-assembly Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 52
- 239000003054 catalyst Substances 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 33
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 28
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 239000011593 sulfur Substances 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 4
- 239000005864 Sulphur Substances 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000007737 ion beam deposition Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000002527 ion beam patterning Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 16
- 230000007246 mechanism Effects 0.000 abstract description 8
- 239000007787 solid Substances 0.000 abstract description 4
- 238000003786 synthesis reaction Methods 0.000 abstract description 4
- 238000004050 hot filament vapor deposition Methods 0.000 abstract description 2
- 230000000877 morphologic effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000004793 Polystyrene Substances 0.000 description 13
- 229920002223 polystyrene Polymers 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 7
- 241000894007 species Species 0.000 description 6
- 239000013626 chemical specie Substances 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910001567 cementite Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000619 electron energy-loss spectrum Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KPWDGTGXUYRARH-UHFFFAOYSA-N 2,2,2-trichloroethanol Chemical compound OCC(Cl)(Cl)Cl KPWDGTGXUYRARH-UHFFFAOYSA-N 0.000 description 1
- 241000208202 Linaceae Species 0.000 description 1
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 alcohol chemical compounds Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000286 energy filtered transmission electron microscopy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
- B01J20/28014—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their form
- B01J20/28028—Particles immobilised within fibres or filaments
-
- C01B31/02—
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
- D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
Definitions
- DLC can be defined as the metastable phase of a-C and a-CH containing graphitic sp 2 clusters embedded in an amorphous sp 3 bonded matrix.
- DLC material comprises a nanocrystalline diamond matrix with graphitic inclusions where collective behavior of sp 2 states is responsible for optical and electrical properties and the sp 3 states govern the mechanical properties. It is a promising candidate for a wide range of applications such as in magnetic storage discs, automobile parts, microelectronic devices, electronics, and biomedical field. But the active device application of the DLC films reported till date is marred by factors viz. high electrical resistivity, large intrinsic stress tending to degrade the electrical and optical properties and poor adhesion leading to “peel off” from the substrate. The fabrication of DLC nanostructures with improved electrical conductivity as well as high strength is an impending need.
- the present invention provides a synthesis method of a highly crystalline DLC nanorod film with high sp 3 content.
- a nanorod film comprises a plurality of spherical papillae 0.2-0.4 ⁇ m in diameter, and each papilla has radially emanating nanorods with a diameter of 35-45 nm.
- synthesis methods of new DLC materials for sensing purposes according to different chemical compounds are provided.
- the DLC nanorod as well can be considered as potential source materials to develop the spintronics devices.
- Such nanostructured materials doped by transition metal ions can have very interesting magnetic properties, which can be related to Spintronics phenomenon
- the present invention to the best of our knowledge provides the first ever synthesis of DLC nanorods synthesized on Si substrate by Chemical vapor deposition (CVD).
- synthesis of a new morphology of DLC in the form of rods that will add impetus to the existing applications of DLC and lead to significant advancement in quality and quantity of material science research and at the same time open new areas for various other potential applications in the field of nanoelectronics is provided.
- a process for fabrication of DLC nanorods includes the steps of exposing a catalyst coated substrate to a mixture of at least a carbon containing gas, hydrogen and a sulfur containing species at a substrate temperature of 750-1000° C. for a period of about 30-90 min in presence of an energy source that can break the gaseous molecules into radicals.
- a process of fabrication of DLC nanorods wherein the carbon containing gas is methane, acetylene or alcohol vapor.
- the alcohol is selected from C1-C6 alcohol.
- the substrate material includes but is not limited to Si, quartz, alumina, and copper.
- a catalyst-assisted fabrication of DLC nanorods wherein the catalyst can be coated on the substrate by techniques including but not limited to chemical vapor deposition, physical vapor deposition, ion-beam deposition, sputtering, e-beam evaporation, vacuum deposition, spin coating, and dipping.
- iron is used as catalyst. Any source of iron or an iron compound can be used depending upon the method utilized for coating the catalyst on the substrate.
- a process of fabrication of DLC nanorods wherein the catalyst layer is less than 100 nm thick.
- the ratio of the carbon-containing gas and hydrogen is 0.1-3.0:100.
- the sulphur-containing species includes but is not limited to hydrogen sulfide or carbon disulphide.
- the concentration of sulphur-containing species is in the range of about 100-1000 ppm.
- a process of fabrication of DLC nanorods includes the steps of exposing a catalyst coated substrate to a mixture of at least a carbon-containing gas, hydrogen and a sulfur-containing species at a substrate temperature of 750-1000° C. for a period of about 30-90 min in presence of an energy source that can break the gaseous molecules into radicals, wherein the total pressure of the gases is in the range of about 10-100 Torr.
- nanorods of diamond-like carbon with high sp 3 content and a high surface to volume ratio are provided.
- DLC nanorods are fabricated by a process that includes the steps of exposing a catalyst coated substrate to a mixture of at least a carbon containing gas, hydrogen and sulfur-containing species at a substrate temperature of 750-1000° C. for a period of about 30-90 min in presence of an energy source that can break the gaseous molecules into radicals.
- DLC nanorods are grown by using the vapor-liquid-solid mechanism.
- the catalyst when the substrate temperature rises, the catalyst on its surface transforms into nanosized droplets and the active chemical species or radicals produced from the input gases interact with the catalyst surface, producing substitution diffusion of carbon in catalyst layer.
- the incoming carbon vapors from the filament diffuse and condense at the solid/liquid interface, and the rate of this process is dependent on the concentration of the active chemical species, which are in the gas phase and are dependent on temperature.
- the catalyst droplets continuously absorb the vapors, they are supersaturated with carbon, resulting in extrusion of excess carbon in the form of a rod.
- the energy source used to break the gaseous molecules into radicals includes but is not limited to hot filament, microwave plasma, radio frequency, UV light, and laser radiation.
- a diamond-like carbon nanorod has a longer axis in the range of about 5-500 nm and a shorter axis in the range of about 0.5 to 50 nm.
- a diamond-like carbon nanorod that may or may not have an aggregation of catalyst particles at the tip is provided.
- a device comprising at least one single nanorod of diamond-like carbon, selected from sensors, devices used in micro- or nano- or optoelecronics, SEM tips, cold cathode devices, or field emission devices.
- a process of fabricating diamond-like carbon nanorods includes the steps of: forming a patterned nanotemplate of catalyst material on the substrate; and exposing the catalyst coated substrate to a mixture of at least a carbon-containing gas, hydrogen and sulfur-containing species at a substrate temperature of about 750-1000° C. in presence of an energy source that can break the gaseous molecules into radicals for a period of about 30-90 min.
- the nanotemplate formation can be carried out using a variety of techniques including but not limited to lithography, ion-beam patterning, nanostencils, photolithography, inkjet printing, and guided and unguided self assembly.
- the carbon-containing gas is methane, acetylene or alcohol vapor; the alcohol is selected from C1-C6 alcohol; and the substrate material includes but is not limited to Si, quartz, alumina, and copper.
- the catalyst in a catalyst assisted fabrication of DLC nanorods, can be coated on the substrate by various techniques including but not limited to chemical vapor deposition, physical vapor deposition, ion-beam deposition, sputtering, e-beam evaporation, vacuum deposition, spin coating, and dipping.
- iron is used as catalyst and any source of iron including but not limited to ferrocene can be used depending upon the method utilized for coating the catalyst on the substrate.
- FIG. 1 shows SEM images of (a) PS spheres deposited on Si Substrate (b) Fe nanoisland (c) Uniform and random distribution of flappele and (d) magnified image of single flappele, according to the present invention.
- FIG. 2 shows ERTEM images of DLC rods.
- FIG. 3 shows Raman spectra of the DLC nanorod film, according to the present invention.
- FIG. 4 shows EEL spectrum of the DLC nanorods film, according to the present invention.
- FIG. 5 shows a Gaussian fit of the EEL spectrum, according to the present invention.
- FIG. 6 illustrates a representation of the inventive mechanism, according to the present invention.
- a self-assembly of iron nanostructures was fabricated on an n-type (100) Si substrate using spin coated polystyrene spheres.
- a major problem encountered in the monolayer coverage of polystyrene spheres was the lack of areal uniformity throughout the wafer surface which in turn was due to non adhesion of polystyrene spheres on the substrate surface.
- the Si substrates were ultrasonicated in 20 mL of HF (47-51%) for 20 min and subsequently boiled in 20 mL HNO 3 for 10 min so that a uniform thin layer of SiO 2 is formed on the surface, resulting in better adhesion of polystyrene spheres to the substrate.
- the water dispersed polystyrene spheres were spin coated at 3000 rpm for 30 sec.
- a thin Fe layer ( ⁇ 100 nm) was deposited on the polystyrene coated Si substrate using RF sputtering.
- the polystyrene spheres were ultrasonicately etched in trichloroethanol for 4 min.
- the iron template was used as the catalytic compound for the deposition of desired uniform diamond-like carbon nanorod film.
- the Si substrate was introduced in a HFCVD chamber employing two Rhenium filaments of 24 cm each so as to cover a large area of the substrate surface. Growth parameters were a gas mixture of 0.3% methane in hydrogen and 97.7% hydrogen sulphide in hydrogen, deposition pressure of 20 torr, substrate temperature of 900° C. and Filament temperature of about 4000° C.
- FIG. 1 shows the SEM micrograph of the polystyrene coated Si substrate and DLC nanorod film.
- a major problem encountered in the monolayer coverage of polystyrene spheres is the lack of areal uniformity throughout the wafer surface which in turn is due to non adhesion of polystyrene spheres on the substrate surface.
- the Si substrates were ultrasonicated in HF and subsequently boiled in HNO 3 solution so that a uniform oxide layer is formed on the surface, resulting in good adhesion of polystyrene spheres.
- FIG. 1 a shows the Fe deposited polystyrene spheres and FIG. 1 b shows the Fe nanoisland with a uniform distribution
- FIG. 1 c shows the image of a non uniform distribution of papillae which is composed of nanorods that grow radial to the substrate and self assemble into micro- and nanoscale hierarchical structures.
- FIG. 1 d displays the uniform distribution of nanorod film all over the substrate surface.
- Various papillae of diameters ranging from 0.2 to 0.4 ⁇ m are found arranged in a random pattern on the substrate surface.
- FIG. 2 represents the EFTEM of the deposited film.
- TEM samples were prepared by scratching the nanorod film from the substrate using a sharp tungsten tip and then deposited on a carbon TEM grid.
- the Figure distinctly shows the aggregation of Fe nanoparticles at the rod tip.
- the average diameter of the rods was estimated to be in the range of 35 nm-45 nm.
- DLC nanorods is based on Physical vapor deposition process.
- the Fe on the substrate surface transforms into nanosized droplets and the active chemical species C, CH, CH 2 and CH 3 as well as C 2 and C 2 H interact with Fe surface producing Fe 3 C.
- the incoming C, CH vapors from the filament diffuse and condense at the solid/liquid interface and rate of such process is dependent on concentration of the active chemical species C, CH, CH 2 and CH 3 as well as C 2 and C 2 H, which are in the gas phase and are dependent on temperature.
- the last step enthalpy is determined by C—C band energy and difference of interaction energy between C atom with substrate surface and Fe 3 C surface. If such difference is larger than 4.5 eV, the process of interest is exothermic, and we can expect that process of the DLC nanorods will have rate higher than process of growing of the carbon (diamond) thin layer as well as rate of the mentioned active chemical species interaction with DLC opened surface (cylinder surface) should be much less than discussed mechanism growing rate due to such processes are endothermic. So it is proposed the mechanism of the DLC growing by carbon substitution process in Fe 3 C compound (substitution diffusion of C in Fe layer). We may also assume that during of such growing process C atom in the forming material has tetrahedral configuration with many defects, because surface of substrate is not ideal plan, and the Fe layer has thickness distribution in the layer, that gives diffusing flax distribution by the layer surface.
- Raman spectroscopy is largely used to study Carbon materials.
- the structural phases of the films were characterized by micro-Raman spectroscopy (RS).
- RS micro-Raman spectroscopy
- the deconvoluted visible Raman spectrum of the deposited sample shows four characteristic bands. As shown in FIG. 3 , the peak around 1131 cm ⁇ 1 corresponds to the presence of diamond in nanocrystalline form. A broad peak at 1331.5 cm ⁇ 1 which is a typical signature of the presence of sp 3 bonded diamond phase.
- Graphitic carbon shows a G peak which is located at 1591 cm ⁇ 1 corresponding to E 2g symmetry of graphite perfect crystal. The D-peak centered at 1350 cm ⁇ 1 corresponds to breathing mode A 1g activated by disordered and forbidden in perfect graphite.
- FIG. 5 displays the carbon K-edge energy loss spectrum comprising two maxima at ⁇ 286 eV and at ⁇ 294 eV corresponding to 1s- ⁇ * (sp 2 C atom) and 1s- ⁇ * (sp 3 C atom), respectively.
- the EELS spectrum of DLC nanorod film is dominated by plasmon exciton consisting of ⁇ * Plasmon.
- the sp 3 fraction of the DLC film was estimated from the EELS spectrum.
- the C K-edge portion of the spectrum was deconvoluted to compare the intensities of ⁇ * and ⁇ * features.
- the percentage of the sp 3 hybridized carbon was calculated from the ratio of the core sp 3 peak ( ⁇ 294 eV) area over the Carbon K-edge area in the range of from 280 eV to 300 eV.
- a crystalline DLC nanorod film with a substantial amount of sp 3 bonded carbon atom has been synthesized by the CVD method using iron as catalyst.
- the most significant result of the present work is the growth of a DLC nanorod film.
- the film is characterized by special micro- and nano scale hierarchical surface structures having high purity which is evident from the D and G Raman peaks obtained at 1347.8 cm ⁇ 1 and 1590 cm ⁇ 1 , respectively.
- the sp 3 carbon content was found to be around 88.80% as determined from Electron Energy Loss Spectroscopy.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Textile Engineering (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
-
- A) SEM and TEM
Claims (26)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/070,678 US9533882B1 (en) | 2010-03-24 | 2011-03-24 | Diamond-like carbon nanorods and fabrication thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31690510P | 2010-03-24 | 2010-03-24 | |
US13/070,678 US9533882B1 (en) | 2010-03-24 | 2011-03-24 | Diamond-like carbon nanorods and fabrication thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US9533882B1 true US9533882B1 (en) | 2017-01-03 |
Family
ID=57682167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/070,678 Active - Reinstated 2032-10-02 US9533882B1 (en) | 2010-03-24 | 2011-03-24 | Diamond-like carbon nanorods and fabrication thereof |
Country Status (1)
Country | Link |
---|---|
US (1) | US9533882B1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6156256A (en) * | 1998-05-13 | 2000-12-05 | Applied Sciences, Inc. | Plasma catalysis of carbon nanofibers |
US20030015414A1 (en) * | 2000-04-18 | 2003-01-23 | Hisashi Kajiura | Method and system for production fullerene |
US20080107587A1 (en) * | 2004-12-13 | 2008-05-08 | Morio Yumura | Method for Manufacturing Single-Walled Carbon Nanotubes |
US20100084634A1 (en) * | 2004-05-27 | 2010-04-08 | Toppan Printing Co., Ltd. | Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film |
-
2011
- 2011-03-24 US US13/070,678 patent/US9533882B1/en active Active - Reinstated
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6156256A (en) * | 1998-05-13 | 2000-12-05 | Applied Sciences, Inc. | Plasma catalysis of carbon nanofibers |
US20030015414A1 (en) * | 2000-04-18 | 2003-01-23 | Hisashi Kajiura | Method and system for production fullerene |
US20100084634A1 (en) * | 2004-05-27 | 2010-04-08 | Toppan Printing Co., Ltd. | Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film |
US20080107587A1 (en) * | 2004-12-13 | 2008-05-08 | Morio Yumura | Method for Manufacturing Single-Walled Carbon Nanotubes |
Non-Patent Citations (2)
Title |
---|
Definition coating Merriam Webster; No. 2015. * |
Pribat et al.; Uniformed Patterned Growth of Carbon Nanotubes with Surface Carbon; Applied Physics Letters; vol. 79, No. 10; Sep. 3, 2001. * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Hong et al. | Controlling the growth of single-walled carbon nanotubes on surfaces using metal and non-metal catalysts | |
Pang et al. | CVD growth of 1D and 2D sp 2 carbon nanomaterials | |
Journet et al. | Carbon nanotube synthesis: from large-scale production to atom-by-atom growth | |
RU2483022C2 (en) | Method of manufacturing carbon nanotube functionalised by fullerenes, composite material, thick or thin film, wire and device made with use of obtained nanotubes | |
US7854991B2 (en) | Single-walled carbon nanotube and aligned single-walled carbon nanotube bulk structure, and their production process, production apparatus and application use | |
Nerushev et al. | Particle size dependence and model for iron-catalyzed growth of carbon nanotubes by thermal chemical vapor deposition | |
Chattopadhyay et al. | Nanotips: growth, model, and applications | |
Chen et al. | Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition | |
US20060289351A1 (en) | Nanostructures synthesized using anodic aluminum oxide | |
Wang et al. | Chirality-controlled synthesis of single-walled carbon nanotubes—From mechanistic studies toward experimental realization | |
Kim et al. | Size engineering of metal nanoparticles to diameter-specified growth of single-walled carbon nanotubes with horizontal alignment on quartz | |
Mann | Synthesis of carbon nanotubes | |
Wang et al. | Low-temperature catalytic growth of carbon nanotubes under microwave plasma assistance | |
KR101121164B1 (en) | Method for Preparing Graphene Nano-Ribbon | |
US9533882B1 (en) | Diamond-like carbon nanorods and fabrication thereof | |
Lin et al. | Growth mechanism and properties of the large area well-aligned carbon nano-structures deposited by microwave plasma electron cyclotron resonance chemical vapor deposition | |
Varshney et al. | Fabrication and field emission study of novel rod-shaped diamond-like carbon nanostructures | |
Ismagilov et al. | Noncatalytic synthesis of carbon nanotubes by chemical vapor deposition | |
Levchenko et al. | Large arrays and networks of carbon nanotubes: morphology control by process parameters | |
KR20160042676A (en) | Carbon nanofibers with sharp tip structure and carbon nanofibers growth method using of palladium catalyst | |
Ma et al. | One-Dimensional Carbon Nanostructures: Low-Temperature Chemical Vapor Synthesis and Applications | |
García-Betancourt et al. | Pine-tree-like morphologies of nitrogen-doped carbon nanotubes: electron field emission enhancement | |
Scheibel et al. | Template-Based Synthesis of Integrated Carbon Micro-and Nanostructures | |
Kumar | Synthesis Methods for Carbon-Based Materials | |
Jain | Synthesis and characterization of carbon nanowalls by ICP-CVD using aluminium-acetylacetonate precursor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: MICROENTITY |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO MICRO (ORIGINAL EVENT CODE: MICR); ENTITY STATUS OF PATENT OWNER: MICROENTITY Free format text: SURCHARGE, PETITION TO ACCEPT PYMT AFTER EXP, UNINTENTIONAL (ORIGINAL EVENT CODE: M3558); ENTITY STATUS OF PATENT OWNER: MICROENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: MICROENTITY |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, MICRO ENTITY (ORIGINAL EVENT CODE: M3551); ENTITY STATUS OF PATENT OWNER: MICROENTITY Year of fee payment: 4 |
|
PRDP | Patent reinstated due to the acceptance of a late maintenance fee |
Effective date: 20210209 |
|
FEPP | Fee payment procedure |
Free format text: PETITION RELATED TO MAINTENANCE FEES FILED (ORIGINAL EVENT CODE: PMFP); ENTITY STATUS OF PATENT OWNER: MICROENTITY Free format text: PETITION RELATED TO MAINTENANCE FEES GRANTED (ORIGINAL EVENT CODE: PMFG); ENTITY STATUS OF PATENT OWNER: MICROENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20210103 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, MICRO ENTITY (ORIGINAL EVENT CODE: M3552); ENTITY STATUS OF PATENT OWNER: MICROENTITY Year of fee payment: 8 |