US9330932B1 - Methods of fabricating features associated with semiconductor substrates - Google Patents
Methods of fabricating features associated with semiconductor substrates Download PDFInfo
- Publication number
- US9330932B1 US9330932B1 US14/674,302 US201514674302A US9330932B1 US 9330932 B1 US9330932 B1 US 9330932B1 US 201514674302 A US201514674302 A US 201514674302A US 9330932 B1 US9330932 B1 US 9330932B1
- Authority
- US
- United States
- Prior art keywords
- polynucleotide
- structures
- mask
- semiconductor substrate
- polynucleotide structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 63
- 102000040430 polynucleotide Human genes 0.000 claims abstract description 345
- 108091033319 polynucleotide Proteins 0.000 claims abstract description 345
- 239000002157 polynucleotide Substances 0.000 claims abstract description 345
- 230000000295 complement effect Effects 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 45
- 238000000059 patterning Methods 0.000 claims description 21
- 239000000470 constituent Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000002773 nucleotide Substances 0.000 claims description 5
- 125000003729 nucleotide group Chemical group 0.000 claims description 5
- 238000005411 Van der Waals force Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims 1
- 238000010276 construction Methods 0.000 description 15
- 108020004414 DNA Proteins 0.000 description 11
- 102000053602 DNA Human genes 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 8
- 238000010348 incorporation Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 229920002477 rna polymer Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000429 assembly Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012163 sequencing technique Methods 0.000 description 4
- 108091034117 Oligonucleotide Proteins 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JLCPHMBAVCMARE-UHFFFAOYSA-N [3-[[3-[[3-[[3-[[3-[[3-[[3-[[3-[[3-[[3-[[3-[[5-(2-amino-6-oxo-1H-purin-9-yl)-3-[[3-[[3-[[3-[[3-[[3-[[5-(2-amino-6-oxo-1H-purin-9-yl)-3-[[5-(2-amino-6-oxo-1H-purin-9-yl)-3-hydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl]oxyoxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(5-methyl-2,4-dioxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxyoxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(5-methyl-2,4-dioxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(4-amino-2-oxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(5-methyl-2,4-dioxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(5-methyl-2,4-dioxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(4-amino-2-oxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(4-amino-2-oxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(4-amino-2-oxopyrimidin-1-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(6-aminopurin-9-yl)oxolan-2-yl]methoxy-hydroxyphosphoryl]oxy-5-(4-amino-2-oxopyrimidin-1-yl)oxolan-2-yl]methyl [5-(6-aminopurin-9-yl)-2-(hydroxymethyl)oxolan-3-yl] hydrogen phosphate Polymers Cc1cn(C2CC(OP(O)(=O)OCC3OC(CC3OP(O)(=O)OCC3OC(CC3O)n3cnc4c3nc(N)[nH]c4=O)n3cnc4c3nc(N)[nH]c4=O)C(COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3COP(O)(=O)OC3CC(OC3CO)n3cnc4c(N)ncnc34)n3ccc(N)nc3=O)n3cnc4c(N)ncnc34)n3ccc(N)nc3=O)n3ccc(N)nc3=O)n3ccc(N)nc3=O)n3cnc4c(N)ncnc34)n3cnc4c(N)ncnc34)n3cc(C)c(=O)[nH]c3=O)n3cc(C)c(=O)[nH]c3=O)n3ccc(N)nc3=O)n3cc(C)c(=O)[nH]c3=O)n3cnc4c3nc(N)[nH]c4=O)n3cnc4c(N)ncnc34)n3cnc4c(N)ncnc34)n3cnc4c(N)ncnc34)n3cnc4c(N)ncnc34)O2)c(=O)[nH]c1=O JLCPHMBAVCMARE-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 208000018747 cerebellar ataxia with neuropathy and bilateral vestibular areflexia syndrome Diseases 0.000 description 2
- 125000003636 chemical group Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 108020004682 Single-Stranded DNA Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009870 specific binding Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
Definitions
- a variety of methods have been developed for creating patterned masks suitable for patterning underlying materials during fabrication of integrated circuit components.
- a continuing goal of integrated circuit fabrication is to increase integrated circuit density, and accordingly to decrease the size of individual integrated circuit components. There is thus a continuing goal to form patterned masks having reduced feature sizes.
- a typical patterned mask utilized for integrated circuit fabrication is photolithographically-patterned photoresist. Such may be utilized to form feature sizes approaching about 40 nanometers (nm). Sublithographic feature sizes may be formed utilizing pitch-multiplication methodologies (which reduce pitch size by a given multiple; for instance, pitch-doubling methodology reduces pitch size by a multiple of two). However, pitch-multiplication methodologies may be costly due to the complexities associated with such methodologies. Another method showing promise for creating sublithographic feature sizes involves self-assembly of block copolymer to form repeating patterns. Unfortunately, there is often poor control of the final pattern created with the block copolymer. Accordingly, there may be too many defects remaining in the final pattern for commercial viability.
- FIGS. 1 and 2 are diagrammatic top views of example arrangements of polynucleotide structures in masks.
- FIGS. 3 and 4 are diagrammatic top views of example polynucleotide structures.
- FIGS. 5-7 are diagrammatic top views of example arrangements of polynucleotide structures in masks.
- FIGS. 8 and 9 are diagrammatic cross-sectional views of example constructions at process stages of example methods.
- FIG. 10 is a diagrammatic top view on an example semiconductor substrate.
- FIG. 11 is a diagrammatic top view of an example arrangement of polynucleotide structures in a mask.
- FIG. 12 is a diagrammatic cross-sectional view of a region of a construction comprising a polynucleotide mask over a semiconductor substrate.
- FIGS. 13-18 are diagrammatic top views of example arrangements of polynucleotide structures in masks.
- FIGS. 19-27 are diagrammatic cross-sectional views of example constructions at process stages of example methods.
- Polymer which may be utilized to form patterns with a high degree of specificity is polynucleotide (for instance, deoxyribonucleic acid [DNA], ribonucleic acid [RNA], etc.).
- methods are developed for utilization of polynucleotide masks for patterning of features associated with semiconductor substrates.
- the features may be sublithographic, and may have dimensions much smaller than 40 nm; such as, for example, dimensions of less than or equal to about 10 nm, less than or equal to about 5 nm, etc.
- polynucleotide means a polymer comprising two or more nucleotides.
- polynucleotide and polymers referred to as “oligonucleotide”, with both comprising the same subunits and “polynucleotides” being understood to be longer than “oligonucleotides”.
- polynucleotide is used to encompass all polymer lengths, and accordingly to generically encompass polymer lengths sometimes referred to in the art as “oligonucleotides”, as well as the longer polymer lengths.
- Example embodiments are described below with reference to FIGS. 1-27 .
- a construction 10 comprises a polynucleotide mask 12 .
- the mask 12 is over an underlying base 14 (visible in openings that extend through mask 12 ).
- the underlying base may comprise semiconductor material, and in some embodiments may comprise, consist essentially of, or consist of monocrystalline silicon.
- base 14 may be considered to comprise a semiconductor substrate.
- semiconductor substrate means any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials), and semiconductive material layers (either alone or in assemblies comprising other materials).
- substrate refers to any supporting structure, including, but not limited to, the semiconductor substrates described above.
- base 14 may correspond to a semiconductor substrate containing one or more materials associated with integrated circuit fabrication. Some of the materials may correspond to, for example, one or more of refractory metal materials, barrier materials, diffusion materials, insulator materials, etc.
- the mask 12 comprises polynucleotide 16 , and in the shown embodiment such polynucleotide is subdivided amongst four different structures A-D.
- the structures are initially provided as separate structures.
- the separate structures then assemble with one another to form the polynucleotide mask.
- the illustrated polynucleotide mask has structures A-D joining to one another at interfaces 17 - 20 .
- the structures A-D may comprise any suitable compositions and patterns.
- the polynucleotide 16 may correspond to DNA and/or RNA, and the structures may comprise, for example, DNA tile assemblies (i.e., DNA canvases), RNA tile assemblies (i.e., RNA canvases) and/or DNA origami configurations.
- Example structures that may be formed with polynucleotide are described in Wei et al., “Complex shapes self-assembled from single-stranded DNA tiles,” Nature, Vol. 485, (May 31, 2012), pp. 623-626; Kershner et al. “Placement and orientation of individual DNA shapes on lithographically patterned surfaces,” Nature Nanotechnology, (Aug. 16, 2009), pp. 1-4; and Anderson et al., “Self-assembly of a nanoscale DNA box with a controllable lid,” Nature Vol. 459, (May 7, 2009), pp. 73-76.
- the illustrated pattern of FIG. 1 comprises the structures A-D in a particular sequence, and in particular orientations.
- Each of the structures A-D comprises a plurality of openings 22 , with the openings having specific shapes and orientations in the illustrated polynucleotide mask 12 .
- FIG. 2 shows a construction 10 a comprising a polynucleotide mask 12 a comprising the same structures A-D as the mask 12 of FIG. 1 .
- the structures are out of sequence relative to the desired sequence shown in FIG. 1 , and some of the structures are rotated relative to the desired orientation shown in FIG. 1 .
- a polynucleotide mask may contain some structures which can be in multiple orientations without adversely impacting suitability of the mask.
- FIG. 3 shows a structure 24 having openings 22 arranged in a symmetrical manner. Specifically, there are multiple planes of mirror symmetry extending through the structure 24 , with two example planes 25 and 26 being shown. Structure 24 thus has multiple symmetrically identical orientations, and any of such orientations may be equally suitable within a polynucleotide mask.
- FIG. 4 shows a structure 28 having no planes of mirror symmetry. There may be only one appropriate orientation for such structure within a polynucleotide mask.
- the symmetric structure 24 of FIG. 3 may remove some of the orientation problems associated with incorporation of structures into a polynucleotide mask. Further, if a large number of identical structures are utilized that have high symmetry, it may be possible to remove some of the sequencing problems associated with incorporation of structures within a polynucleotide mask. However, even if some of the orientation and sequencing problems are addressed with symmetry, there will likely remain some orientation and/or sequencing issues that cannot be addressed with symmetry alone. Accordingly, the orientation and sequencing problems illustrated in FIG. 2 may limit suitability of polynucleotide masks for semiconductor fabrication. Specifically, semiconductor fabrication relies on consistent formation of intended masking patterns. Some of the embodiments described herein provide methodology which may eliminate the problems illustrated with FIG. 2 .
- a construction 10 b comprises an example polynucleotide mask 12 b .
- the polynucleotide mask 12 b illustrates an example method for achieving desired sequence and orientation alignment of individual polynucleotide structures.
- the polynucleotide structures A-D are provided with complementary surface shapes which join along the interfaces 17 - 20 .
- the openings 22 of FIG. 1 are not shown in FIG. 5 in order to simplify the drawing; but such openings, or other suitable openings, may be present within the polynucleotide mask.
- four individual polynucleotide structures (A-D) are shown, it is to be understood that the mask may comprise many more than the four individual polynucleotide structures. It is also to be understood that a mask may comprise fewer than four individual polynucleotide structures in some applications.
- FIG. 6 illustrates a portion of a polynucleotide mask 12 c in which structures A and C have complementary surface shapes that form a lock-and-key type arrangement along interface 17 .
- FIGS. 5 and 6 are simplistically illustrated to convey the concept that polynucleotide structures A-D may be configured as puzzle pieces that lock together to form a desired polynucleotide mask.
- the polynucleotide structures may be strands which twist and coil into complex configurations.
- some embodiments comprise formation of a mixture of polynucleotide structures which contains a set of surface shapes, with some surface shapes being complementary to others so that they may lock together to form a polynucleotide mask.
- the actual surface shapes may be coils that interweave with one another or other intercalated features.
- the physical configuration of the shapes along interfaces 17 - 20 may be sufficient to hold the structures together as a desired polynucleotide mask during subsequent utilization of such mask.
- one or more bonding regions may be provided along the interfaces.
- FIG. 7 illustrates a configuration in which bonding regions 30 - 33 are provided along interfaces 17 - 20 , respectively.
- the bonding regions comprise complementary areas on the adjacent structures for enhancing adhesion of the adjacent polynucleotide structures to one another (for instance, bonding region 30 comprises complementary areas on adjacent polynucleotide structures A and C).
- the bonding regions 30 - 33 may comprise any suitable configurations.
- the bonding regions may be configured to achieve complementary van der Waals forces across an interface and thereby enhance adhesion of adjacent polynucleotide structures to one another.
- the bonding regions may comprise complementary base pairing regions along adjacent polynucleotide structures.
- the base pairing regions may be configured for Watson-Crick base pairing, or for non-Watson-Crick base pairing.
- the bonding regions may be configured to form covalent bonds across an interface between adjacent polynucleotide structures.
- complementary surface shapes may lock each of the polynucleotide structures A-D into a particular orientation and sequence relative to the others within a polynucleotide mask, and may thereby alleviate the problems described above with reference to FIG. 2 .
- all of the polynucleotide structures within the polynucleotide mask are asymmetric (with an example asymmetric structure being described above with reference to FIG. 4 ), and the complementary surface shapes are configured to lock each polynucleotide structure into only one specific orientation within the polynucleotide mask.
- one or more of the polynucleotide structures may have at least one plane of mirror symmetry (with an example structure having mirror symmetry being described above with reference to FIG. 3 ), and the complementary surface shapes are configured to orient individual polynucleotide structures in any of two or more symmetrically identical orientations within a polynucleotide mask.
- Example processing which may be utilized to form a polynucleotide mask 12 d is described with reference to FIGS. 8 and 9 .
- a semiconductor substrate 14 shown in FIG. 8
- Such polynucleotide structures may be provided proximate the semiconductor substrate, and then may assemble into the polynucleotide mask 12 d (shown in FIG. 9 ).
- Any suitable conditions may be utilized during adhesion of the polynucleotide structures to the substrate and assembly of the polynucleotide structures into the mask. Such conditions may include, for example, appropriate pH, ionic strength, etc.
- the polynucleotide mask of FIG. 9 comprises the interface 18 between polynucleotide structures A and B, and also comprises a bonding region 31 along such interface.
- the polynucleotide masks of FIGS. 5-7 may be utilized during fabrication of features associated with an underlying semiconductor substrate. Such fabrication may include, for example, incorporation of at least some of the polynucleotide mask into an integrated assembly, etching into a semiconductor substrate while using the polynucleotide mask to define a pattern for the etch, and/or adhering a material to the polynucleotide mask to pattern such material.
- Example processing that may be conducted with the polynucleotide masks is described below with reference to FIGS. 19-27 .
- Another example method for aligning individual polynucleotide structures of a polynucleotide mask utilizes registration regions on a substrate to adhere the polynucleotide structures to specific locations.
- FIG. 10 shows a construction 10 e comprising a semiconductor substrate 14 having registration regions 34 - 37 .
- the registration regions may be any suitable structures or modifications to substrate 14 which adhere the polynucleotide structures.
- the regions 34 - 37 may be configured to attract and/or bond with the polynucleotide structures.
- the registration regions may correspond to polynucleotide bases covalently bonded to the substrate 14 and configured for base pairing with individual polynucleotide structures.
- the base pairing may be Watson-Crick base pairing and/or non-Watson-Crick base pairing.
- the registration regions may be configured for covalently bonding to individual polynucleotide structures.
- polynucleotide structures A-D are provided proximate to substrate 14 ( FIG. 10 ), and each of the polynucleotide structures specifically adheres to one of the registration regions.
- the polynucleotide structures A-D comprise regions 38 - 41 which are configured for specific interaction with the registration regions 34 - 37 ( FIG. 10 ).
- the regions 38 - 41 may have base pairs complementary to base pairs of registration regions 34 - 37 and/or may have chemical groups configured for covalent bonding to chemical groups of registration regions 34 - 37 .
- FIG. 12 is a cross-sectional view showing the region 38 of polynucleotide structure A adhering with the registration region 34 of semiconductor substrate 14 .
- Each of the polynucleotide structures A-D may be uniquely configured for adhering to a specific one of the registration regions 34 - 37 , and accordingly the registration regions may be utilized for adhering the polynucleotide structures A-D in a specific sequence and orientation within polynucleotide mask 12 e to avoid the problems described above with reference to FIG. 2 .
- the orientation of a specific polynucleotide structure may be a single unique orientation if the polynucleotide structure has no planes of mirror symmetry, or may be any of two or more symmetrically identical orientations if the polynucleotide structure has one or more planes of mirror symmetry.
- one or more of the individual polynucleotide structures may interact with two or more registration regions.
- the individual registration regions may form one or more interactions with polynucleotide structures to adhere the nucleotide structures. If a registration region forms multiple interactions with a polynucleotide structure (for instance, multiple covalent bonds, multiple base pairing interactions, etc.) the registration region may have any suitable geometric configuration, including, for example, a linear configuration, an annular configurations, etc.; and may be configured so that the single registration region is sufficient to properly orient the polynucleotide structure. In other embodiments, multiple registration regions may be coupled with a single polynucleotide structure to achieve desired orientation of the polynucleotide structure.
- registration regions analogous to those of FIGS. 10-12 may be utilized together with surface structures analogous to those of FIGS. 5-7 to achieve desired alignment of polynucleotide structures within a polynucleotide mask.
- all of the polynucleotide structures A-D are adhered to registration regions associated with an underlying semiconductor substrate.
- a polynucleotide mask may be formed utilizing a combination of some polynucleotide structures adhered to registration regions of a semiconductor substrate, and other polynucleotide structures which are not directly adhered to the semiconductor substrate.
- An example method of utilizing some polynucleotide structures adhered to registration regions to orient other polynucleotide structures not adhered to registration regions is described with reference to FIGS. 13 and 14 .
- FIG. 13 shows a construction 10 f at a processing stage analogous to that of FIG. 11 .
- a plurality of polynucleotide structures G are adhered to a semiconductor substrate utilizing regions 42 of the polynucleotide structures connected to underlying registration regions (not shown) of the semiconductor substrate.
- the polynucleotide structures G may all be identical to one another in some embodiments, and in other embodiments at least some of the polynucleotide structures G may be different from others.
- the individual structures G are shown connected to only single registration regions.
- a single registration region may be sufficient to properly orient a polynucleotide structure; particularly if the registration region forms a sufficient number of interactions with the nucleotide structure (e.g., sufficient number of covalent bonds, sufficient number of base pairs, etc.) in appropriate geometry. If desired, at least some of the polynucleotide structures G may be connected to two or more registration regions to orient the structures.
- FIG. 14 shows construction 10 f after additional polynucleotide structures H are provided, with the additional nucleotide structures being oriented by polynucleotide structures G and completing a polynucleotide mask 12 f .
- the polynucleotide structures H may all be identical to one another in some embodiments, and in other embodiments at least some of the polynucleotide structures H may be different from others.
- the polynucleotide structures H may be oriented relative to one another and relative to polynucleotide structures G utilizing surface shapes analogous to those described above with reference to FIGS. 5-7 and/or utilizing any other suitable configurations.
- the polynucleotide structures G and H may be provided in a single mixture, with polynucleotides within such mixture assembling to form the polynucleotide mask 12 f of FIG. 14 .
- the polynucleotide structures G and H may be provided in two mixtures which are sequentially utilized to form the polynucleotide mask 12 f .
- a first mixture comprising polynucleotide structures G may be provided proximate to semiconductor substrate 14 to form the construction of FIG. 13 .
- a second mixture comprising polynucleotide structures H may be provided, and the second polynucleotide structures may then assemble to form the completed polynucleotide mask 12 f of FIG. 14 .
- polynucleotide structures G and H are diagrammatically illustrated as blocks. However, it is to be understood that such polynucleotide structures may have complex shapes corresponding to coiled and/or twisted strands of polynucleotide-type polymer.
- FIGS. 13 and 14 utilizes two sets of polynucleotide structures (G and H), with a first set (G) orienting a second set.
- processing analogous to that of FIGS. 13 and 14 may be conducted utilizing more than two sets of polynucleotide structures. For instance, a first set may orient a second set, which in turn orients a third set, etc.
- the polynucleotide mask 12 f of FIG. 14 may be utilized during fabrication of features associated with an underlying semiconductor substrate. Such fabrication may include, for example, incorporation of at least some of the polynucleotide mask into an integrated assembly, etching into a semiconductor substrate while using the polynucleotide mask to define a pattern for the etch, and/or adhering a material to the polynucleotide mask to pattern such material.
- Example processing that may be conducted with the polynucleotide mask is described below with reference to FIGS. 19-27 .
- a polynucleotide mask may be configured for patterning features associated with a memory array, and for patterning features associated with peripheral circuitry adjacent the memory array.
- the features associated with the memory array may be more tightly packed than those associated with the peripheral circuitry.
- a construction 10 g comprises a first set of polynucleotide structures J over a first region of a semiconductor substrate 14 .
- the polynucleotide structures J are over a central region of the semiconductor substrate.
- the polynucleotide structures J may be adhered to the substrate in a specific orientation and sequence by utilizing registration regions (not shown) analogous to the regions 34 - 37 of FIG. 10 to adhere one or more of the polynucleotide structures J to substrate 14 .
- all of the polynucleotide structures J are individually adhered to semiconductor substrate 14 with registration regions.
- only a subset of the polynucleotide structures J is adhered to the substrate 14 with registration regions; and others of the polynucleotide structures J are not adhered directly to the substrate, but rather are aligned to the adhered structures.
- the structures J may align to one another utilizing complementary surfaces analogous to those described above with reference to FIGS. 5-7 , and/or utilizing any other suitable configurations.
- the polynucleotide structures J comprise densely-packed patterning constituents 50 (only some of which are labeled).
- the patterning constituents are shown as circular openings extending through the polynucleotide features, but in other embodiments may comprise other configurations.
- the densely-packed constituents 50 may be spaced from one another by dimensions of less than 10 nm, less than 5 nm, etc.; and in some embodiments may be utilized for patterning features associated with memory.
- the polynucleotide structures J are shown to be identical to one another, but in other embodiments at least some of the polynucleotide structures J may be different relative to others of the polynucleotide structures J.
- the polynucleotide structures J may be initially provided adjacent semiconductor substrate 14 in a mixture, whereupon the polynucleotide structures J assemble across semiconductor substrate 14 to create a desired configuration.
- the polynucleotide structures J form a first portion of a polynucleotide mask. Referring to FIG. 16 , the polynucleotide structures J are utilized to orient a second set of polynucleotide structures K.
- the second set of polynucleotide structures K form a second portion of the polynucleotide mask, and in some embodiments may be considered to propagate the second portion of the polynucleotide mask from the first portion generated with polynucleotide structures J.
- the polynucleotide structures K may be within the mixture comprising polynucleotide structures J, or may be provided in a second mixture different from that which comprises polynucleotide structures J.
- the polynucleotide structures K comprise patterning constituents 52 (only some which are labeled).
- the patterning constituents 52 comprise numerous different types (for instance, some are illustrated as circles and some are illustrated as rectangles), and are less densely packed than the constituents 50 .
- patterning constituents 50 may be utilized for forming features associated with memory array architecture, and patterning constituents 52 may be utilized for forming architecture peripheral to the memory array.
- the masking constituents 50 and 52 may be utilized for patterning features of other integrated architectures.
- polynucleotide structures K form a second portion of a polynucleotide mask, with such second portion entirely surrounding the first portion of the polynucleotide mask. In other embodiments, the second portion may not entirely surround the first portion of the polynucleotide mask.
- the polynucleotide mask formed with polynucleotide structures J and K only partially covers semiconductor substrate 14 (as shown in FIG. 16 ). In other embodiments, the polynucleotide mask may entirely cover semiconductor substrate 14 .
- the polynucleotide mask is the only mask over the semiconductor substrate 14 , but in other embodiments the polynucleotide mask may be utilized in conjunction with other masks, such as, for example, photolithographically-patterned masks, masks formed utilizing pitch-multiplication methodologies (i.e., methodologies which decrease pitch to sub-lithographic dimensions), etc.
- FIGS. 15 and 16 forms the densely-packed patterning constituents 50 within an interior, central region of the mask, and forms the less-densely-packed constituents 52 outwardly of the densely-packed constituents.
- densely-packed constituents and less-densely-packed constituents may alternate across regions of a polynucleotide mask, densely-packed constituents may be formed outwardly of centrally-located less-densely-packed constituents, etc.
- a centrally-located first portion of a polynucleotide mask may be formed prior to another portion of the polynucleotide mask, as shown in FIGS. 15 and 16 .
- the centrally-located portion may be formed subsequent to another portion.
- FIG. 17 shows a construction 10 h comprising polynucleotide structures K assembled across a semiconductor substrate 14 .
- one or more of the polynucleotide structures K may be adhered to substrate 14 through registration regions of the type described with reference to FIGS. 10 and 11 .
- FIG. 18 shows the polynucleotide structures J assembling within a central region surrounded by the polynucleotide structures K.
- the polynucleotide structures J and K together form a polynucleotide mask.
- Adjacent polynucleotide structures within the polynucleotide mask of FIG. 18 may interface through complementary surface structures analogous to those described above with reference to FIGS. 5-7 , and/or through any other suitable configurations.
- the polynucleotide mask of FIG. 18 may be utilized during fabrication of features associated with an underlying semiconductor substrate. Such fabrication may include, for example, incorporation of at least some of the polynucleotide mask into an integrated assembly, etching into a semiconductor substrate while using the polynucleotide mask to define a pattern for the etch, and/or adhering a material to the polynucleotide mask to pattern such material.
- Example processing that may be conducted with the polynucleotide mask is described below with reference to FIGS. 19-27 .
- a construction 10 i comprises a polynucleotide mask 12 i over a semiconductor substrate 14 .
- the mask comprises polynucleotide 58 , and has openings 60 extending therethrough.
- a material 62 is selectively formed on an upper surface of polynucleotide 58 relative to upper surfaces of substrate 14 .
- the material 62 may comprise any suitable material.
- material 62 may comprise electrically insulative material (for instance, silicon dioxide), or electrically conductive material (for instance, metal or metal-containing compositions).
- electrically insulative material for instance, silicon dioxide
- electrically conductive material for instance, metal or metal-containing compositions
- the material 62 may be utilized as a mask for fabricating features associated with semiconductor substrate 14 .
- FIG. 21 shows an application in which the material 62 is utilized as an etch mask to protect underlying features during an etch into semiconductor substrate 14 .
- FIG. 22 shows an application in which the material 62 is utilized as a mask during implanting of dopant into the exposed regions of a semiconductor substrate 14 to form doped regions 64 .
- the processing of FIGS. 21 and 22 may also be combined so that etching is conducted into the exposed regions of semiconductor substrate 14 , and dopant is implanted into the exposed regions.
- processing of FIGS. 21 and 22 may be combined with other masking processes (for example, photolithography). Thus, some regions may be protected with a photolithographically-patterned mask during the etch of FIG. 21 and/or the implant of FIG. 22 .
- the patterns established by material 62 in FIGS. 21 and 22 are defined by the polynucleotide mask formed with polynucleotide 58 .
- Such polynucleotide mask may or may not remain under material 62 during the processing of FIGS. 21 and 22 , depending on whether or not the polynucleotide can survive the processing conditions.
- FIG. 20 forms a positive mask over polynucleotide 58 (i.e., the mask has the same shape as the underlying polynucleotide).
- a negative mask may be formed relative to the polynucleotide 58 (i.e., the mask may have a complementary shape relative to the underlying polynucleotide).
- FIG. 23 shows construction 10 i at a processing stage subsequent to that of FIG. 19 in accordance with an embodiment in which masking material 62 forms a negative mask relative to polynucleotide 58 .
- Example methods for forming a negative mask relative to polynucleotide are described in, for example, Surwade et al., “Nanoscale growth and patterning of inorganic oxides using DNA nanostructures templates,” Journal of the American Chemical Society (2013), 135, pp 6778-6781.
- the polynucleotide 58 ( FIG. 23 ) is removed.
- the material 62 is utilized as a mask for fabricating features associated with semiconductor substrate 14 .
- FIG. 25 shows an application in which the material 62 is utilized as an etch mask to protect underlying features during an etch into semiconductor substrate 14 .
- FIG. 26 shows an application in which the material 62 is utilized as a mask during implanting of dopant into the exposed regions of a semiconductor substrate 14 to form doped regions 66 .
- the processing of FIGS. 25 and 26 may also be combined so that etching is conducted into the exposed regions of semiconductor substrate 14 , and dopant is implanted into the exposed regions.
- processing of FIGS. 25 and 26 may be combined with other masking processes (for example, photolithography). Thus, some regions may be protected with a photolithographically-patterned mask during the etch of FIG. 25 and/or the implant of FIG. 26 .
- the patterns established by material 62 in FIGS. 25 and 26 are defined by the polynucleotide mask formed with polynucleotide 58 ( FIG. 23 ), and correspond to an approximate inverse image of such pattern.
- polynucleotide 58 is a sacrificial material utilized for patterning features associated with semiconductor substrate 14 . In other embodiments, at least some of polynucleotide 58 may be incorporated into the features associated with semiconductor substrate 14 . In some embodiments polynucleotide 58 may be referred to as a “polynucleotide mask” incorporated into features associated with semiconductor substrate 14 . In such embodiments, at least some of the “polynucleotide mask” corresponds to patterned polynucleotide suitable for incorporation into the desired features; and may or may not also be used for patterning etches, implants, etc. as a traditional “mask”. FIG.
- polynucleotide 58 is incorporated into an integrated assembly, and specifically is incorporated into features 68 .
- Such features may comprise, for example, transistors, wiring, etc.
- the polynucleotide may be an important component of the features.
- the polynucleotide may provide desired physical or chemical properties to the features.
- the polynucleotide may be configured for specific binding to one or more molecules. Such binding may alter electrical properties of the features so that the polynucleotide may be incorporated into an indicator for detecting the presence of such molecules, and possibly also for determining a concentration of the molecules (i.e., sensor applications).
- the patterning methods described herein may be applied to fabrication of integrated circuitry (including, for example, logic, memory, wiring, sensors, etc.), fabrication of MEMS (microelectromechanical systems), etc.
- the structures J and/or K of FIGS. 16 and 18 may comprise logic devices, sensor devices and/or wiring.
- the various materials, substances, compositions, etc. described herein may be formed with any suitable methodologies, either now known or yet to be developed, including, for example, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etc.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- PVD physical vapor deposition
- dielectric dielectric
- electrically insulative dielectrically insulative
- the terms are considered synonymous in this disclosure.
- the utilization of the term “dielectric” in some instances, and the term “electrically insulative” in other instances, may be to provide language variation within this disclosure to simplify antecedent basis within the claims that follow, and is not utilized to indicate any significant chemical or electrical differences.
- Some embodiments include a method of fabricating features associated with a semiconductor substrate.
- a mixture of polynucleotide structures is provided proximate the semiconductor substrate.
- the polynucleotide structures comprise a set of surface shapes with surface shapes of some polynucleotide structures being complementary to surface shapes of other polynucleotide structures.
- the complementary surface shapes lock together along interfaces between adjacent polynucleotide structures to incorporate the polynucleotide structures into a polynucleotide mask.
- the polynucleotide mask is used during fabrication of features associated with the semiconductor substrate.
- Some embodiments include a method of fabricating features associated with a semiconductor substrate.
- a mixture of polynucleotide structures is provided proximate the semiconductor substrate.
- the semiconductor substrate comprises registration regions configured to adhere individual polynucleotide structures to specific locations of the semiconductor substrate.
- the adhered polynucleotide structures are incorporated into a polynucleotide mask.
- the polynucleotide mask is used during fabrication of features associated with the semiconductor substrate.
- Some embodiments include a method of fabricating features associated with a semiconductor substrate.
- First polynucleotide structures are provided proximate the semiconductor substrate.
- the semiconductor substrate comprises registration regions configured to adhere at least some individual first polynucleotide structures to the semiconductor substrate.
- the adhered first polynucleotide structures are incorporated into a first portion of a polynucleotide mask over a first region of the semiconductor substrate.
- Second polynucleotide structures are provided proximate the semiconductor substrate.
- the second polynucleotide structures propagate a second portion of the polynucleotide mask connected with the first portion of the polynucleotide mask.
- the first and second portions of the polynucleotide mask are used during fabrication of features associated with the semiconductor substrate.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Micromachines (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Abstract
Description
Claims (37)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/674,302 US9330932B1 (en) | 2015-03-31 | 2015-03-31 | Methods of fabricating features associated with semiconductor substrates |
PCT/US2016/018175 WO2016160156A1 (en) | 2015-03-31 | 2016-02-17 | Methods of fabricating features associated with semiconductor substrates |
TW105106363A TW201705207A (en) | 2015-03-31 | 2016-03-02 | Methods of fabricating features associated with semiconductor substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/674,302 US9330932B1 (en) | 2015-03-31 | 2015-03-31 | Methods of fabricating features associated with semiconductor substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
US9330932B1 true US9330932B1 (en) | 2016-05-03 |
Family
ID=55807591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/674,302 Active US9330932B1 (en) | 2015-03-31 | 2015-03-31 | Methods of fabricating features associated with semiconductor substrates |
Country Status (3)
Country | Link |
---|---|
US (1) | US9330932B1 (en) |
TW (1) | TW201705207A (en) |
WO (1) | WO2016160156A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9466504B1 (en) * | 2015-03-31 | 2016-10-11 | Micron Technology, Inc. | Methods of fabricating features associated with semiconductor substrates |
US11505796B2 (en) | 2021-03-11 | 2022-11-22 | Nautilus Biotechnology, Inc. | Systems and methods for biomolecule retention |
US11603383B2 (en) | 2018-04-04 | 2023-03-14 | Nautilus Biotechnology, Inc. | Methods of generating nanoarrays and microarrays |
US11692217B2 (en) | 2020-11-11 | 2023-07-04 | Nautilus Subsidiary, Inc. | Affinity reagents having enhanced binding and detection characteristics |
USRE50029E1 (en) * | 2015-04-02 | 2024-07-02 | Micron Technology, Inc. | Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110098445A1 (en) * | 2009-10-27 | 2011-04-28 | The Government Of The Us, As Represented By The Secretary Of The Navy | Covalent attachment of peptides and biological molecules to luminescent semiconductor nanocrystals |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002054450A2 (en) * | 2001-01-04 | 2002-07-11 | Eagle Research & Development, Llc | Method of patterning a mask on the surface of a substrate and product manufactured thereby |
US7842793B2 (en) * | 2005-06-14 | 2010-11-30 | The California Institute Of Technology | Methods of making nucleic acid nanostructures |
KR101062416B1 (en) * | 2008-10-09 | 2011-09-06 | 성균관대학교산학협력단 | Nano Device Formation Method |
US8774494B2 (en) * | 2010-04-30 | 2014-07-08 | Complete Genomics, Inc. | Method and system for accurate alignment and registration of array for DNA sequencing |
WO2012122418A1 (en) * | 2011-03-08 | 2012-09-13 | Lightspeed Genomics, Inc. | Self-assembling high density ordered patterned biomolecule array and method for making and using the same |
-
2015
- 2015-03-31 US US14/674,302 patent/US9330932B1/en active Active
-
2016
- 2016-02-17 WO PCT/US2016/018175 patent/WO2016160156A1/en active Application Filing
- 2016-03-02 TW TW105106363A patent/TW201705207A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110098445A1 (en) * | 2009-10-27 | 2011-04-28 | The Government Of The Us, As Represented By The Secretary Of The Navy | Covalent attachment of peptides and biological molecules to luminescent semiconductor nanocrystals |
Non-Patent Citations (4)
Title |
---|
Andersen et al., "Self-assembly of a nanoscale DNA box with a controllable lid," Nature, vol. 459, May 2009, pp. 73-77. |
Kershner et al., "Placement and orientation of individual DNA shapes on lithographically patterned surfaces," Nature Nanotechnology, Published Online Aug. 16, 2009 at www.nature.com/naturenanotechnology, pp. 1-5. |
Surwade et al., "Nanoscale Growth and Patterning of Inorganic Oxides Using DNA Nanostructure Templates," Journal of the American Chemcial Society, vol. 135, Apr. 10, 2013, pp. 6778-6781. |
Wei et al., "Complex shapes self-assembled from single-stranded DNA tiles," Nature, vol. 485, May 31, 2012, pp. 623-627. |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9466504B1 (en) * | 2015-03-31 | 2016-10-11 | Micron Technology, Inc. | Methods of fabricating features associated with semiconductor substrates |
USRE50029E1 (en) * | 2015-04-02 | 2024-07-02 | Micron Technology, Inc. | Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therof |
US11603383B2 (en) | 2018-04-04 | 2023-03-14 | Nautilus Biotechnology, Inc. | Methods of generating nanoarrays and microarrays |
US11692217B2 (en) | 2020-11-11 | 2023-07-04 | Nautilus Subsidiary, Inc. | Affinity reagents having enhanced binding and detection characteristics |
US11993807B2 (en) | 2020-11-11 | 2024-05-28 | Nautilus Subsidiary, Inc. | Affinity reagents having enhanced binding and detection characteristics |
US11505796B2 (en) | 2021-03-11 | 2022-11-22 | Nautilus Biotechnology, Inc. | Systems and methods for biomolecule retention |
US11760997B2 (en) | 2021-03-11 | 2023-09-19 | Nautilus Subsidiary, Inc. | Systems and methods for biomolecule retention |
US11912990B2 (en) | 2021-03-11 | 2024-02-27 | Nautilus Subsidiary, Inc. | Systems and methods for biomolecule retention |
Also Published As
Publication number | Publication date |
---|---|
TW201705207A (en) | 2017-02-01 |
WO2016160156A1 (en) | 2016-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9330932B1 (en) | Methods of fabricating features associated with semiconductor substrates | |
US7867782B2 (en) | Nanoscale moiety placement methods | |
EP1630127B1 (en) | Method for realising a hosting structure of nanometric elements | |
USRE50029E1 (en) | Methods of forming nanostructures using self-assembled nucleic acids, and nanostructures therof | |
US8071467B2 (en) | Methods of forming patterns, and methods of forming integrated circuits | |
TW201115646A (en) | A method for forming a robust top-down silicon nanowire structure using a conformal nitride and such structure | |
US9466504B1 (en) | Methods of fabricating features associated with semiconductor substrates | |
Sarveswaran et al. | Deposition of DNA rafts on cationic SAMs on silicon [100] | |
US7887691B2 (en) | Arrays of electrodes coated with molecules and their production | |
CN104350420B (en) | For handling the manufacturing method of monomolecular equipment | |
Xiao et al. | AFM observations of self-assembled lambda DNA network on silanized mica | |
US6218175B1 (en) | Nano-devices using block-copolymers | |
US6905955B2 (en) | Methods of forming conductive connections, and methods of forming nanofeatures | |
Szymonik et al. | DNA self-assembly-driven positioning of molecular components on nanopatterned surfaces | |
Xiao et al. | Controlled assembly of DNA nanostructures on silanized silicon and mica surfaces for future molecular devices | |
Liu | Nanofabrication using unmodified DNA nanostructures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SILLS, SCOTT E.;SANDHU, GURTEJ S.;SIGNING DATES FROM 20150326 TO 20150330;REEL/FRAME:035299/0433 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001 Effective date: 20160426 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT, MARYLAND Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001 Effective date: 20160426 |
|
AS | Assignment |
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT, CALIFORNIA Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001 Effective date: 20160426 |
|
AS | Assignment |
Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, ILLINOIS Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 Owner name: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT, IL Free format text: SECURITY INTEREST;ASSIGNORS:MICRON TECHNOLOGY, INC.;MICRON SEMICONDUCTOR PRODUCTS, INC.;REEL/FRAME:047540/0001 Effective date: 20180703 |
|
AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT;REEL/FRAME:047243/0001 Effective date: 20180629 |
|
AS | Assignment |
Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:050937/0001 Effective date: 20190731 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |
|
AS | Assignment |
Owner name: MICRON SEMICONDUCTOR PRODUCTS, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 Owner name: MICRON TECHNOLOGY, INC., IDAHO Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:051028/0001 Effective date: 20190731 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |