US9269388B2 - Chemical pinning to direct addressable array using self-assembling materials - Google Patents
Chemical pinning to direct addressable array using self-assembling materials Download PDFInfo
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- US9269388B2 US9269388B2 US14/673,471 US201514673471A US9269388B2 US 9269388 B2 US9269388 B2 US 9269388B2 US 201514673471 A US201514673471 A US 201514673471A US 9269388 B2 US9269388 B2 US 9269388B2
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- 239000000463 material Substances 0.000 title claims description 24
- 239000000126 substance Substances 0.000 title description 22
- 229920001400 block copolymer Polymers 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000005381 magnetic domain Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 50
- 239000002086 nanomaterial Substances 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 20
- 229920001577 copolymer Polymers 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000013500 data storage Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000000737 periodic effect Effects 0.000 description 12
- 238000001338 self-assembly Methods 0.000 description 8
- 239000011295 pitch Substances 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- -1 Polydimethylsiloxane Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- DUWMYHHANUZXPP-UHFFFAOYSA-N 2-acetyl-5-aminopentanoic acid Chemical compound CC(=O)C(C(O)=O)CCCN DUWMYHHANUZXPP-UHFFFAOYSA-N 0.000 description 1
- 229910020486 P2VP Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002408 directed self-assembly Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000075 poly(4-vinylpyridine) Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/596—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
- G11B5/59633—Servo formatting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
- G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- Nanostructures having components with dimensions on a nanometer scale are being considered for use in the areas of optics, electronics, mechanics, magnetism and so forth.
- Nanostructures encompass various structures referred to as, for example, nanoparticles, nanotubes or quantum dots, and may potentially be used as building blocks for ordered and complex materials.
- bit patterned media BPM
- DTM discrete track media
- the patterning of ultra-high density dot array or line array, with a periodicity as small as 25 nm or less is desirable.
- optical lithography is limited by the diffraction limit, the resolution of conventional optical lithography is usually limited to about 50 nm half-pitch. Thus conventional optical lithography may not be suitable for fabricating such nanostructures for bit patterned magnetic storage media.
- a high-throughput patterning method is desired for forming nanostructures on a substrate.
- Self-assembly technology has the potential to provide both ultrahigh-density patterning and high throughput.
- Various embodiments of the present disclosure are generally directed to a substrate having an arrangement of self-assembling magnetic domains and a method therefor.
- a method includes pattering a substrate with a plurality of chemically contrasted alignment features, and depositing a block copolymer having a magnetic component and a non-magnetic component onto the substrate.
- the block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features.
- the period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.
- a method in other embodiments, includes forming a photoresist layer on a disc-shaped rigid substrate having a polymer brush layer thereon.
- a lithographic process is used to form a first plurality alignment features in a servo area and a second plurality of alignment features in a bit area of the photoresist layer.
- a self-assembling copolymer material comprising a magnetic component and a non-magnetic component is deposited on at least a portion of the bit area.
- the position of curvilinearly shaped domains of the self-assembled material is directed by the second plurality of alignment features to form a nanostructure pattern in the bit area having a period from two to ten times a period of the second plurality of alignment features.
- the curvilinearly shaped domains are formed by the magnetic component of the copolymer material.
- a bit patterned magnetic recording medium is formed by the foregoing steps.
- FIG. 1 is a schematic representation of a fabrication process in accordance with one aspect of the present disclosure.
- FIG. 2 is a schematic representation of a block copolymer.
- FIG. 3 is a cross-sectional view of a substrate.
- FIG. 4 is a cross-sectional view of a substrate.
- FIGS. 5-7 are schematic representations of dot patterns.
- FIGS. 8-11 are schematic representations of portions of patterned media constructed in accordance with some aspects of the present disclosure.
- FIG. 12 is a photomicrograph of a portion of a patterned media in accordance with an aspect of the present disclosure.
- FIG. 13 is a schematic cross-sectional view of a portion of another patterned media constructed in accordance with an aspect of the present disclosure.
- FIG. 14 is a schematic cross-sectional view of a portion of another patterned media constructed in accordance with an aspect of the present disclosure.
- FIG. 15 is a photomicrograph of a portion of another patterned media in accordance with an aspect of the present disclosure.
- FIG. 16 is a plan view of a patterned surface that can be used in the fabrication of the patterned media of FIG. 15 .
- FIGS. 17-19 are schematic representations of a cross-section of another patterned media constructed in accordance with an aspect of the present disclosure.
- FIG. 20 is a schematic representation of a data storage disc template in accordance with an aspect of the present disclosure.
- FIG. 21 is a flow diagram that illustrates the method of an aspect of the present disclosure.
- the present disclosure generally relates to methods of fabricating nanostructured devices and to devices fabricated using such methods.
- the disclosure sets forth a method for achieving long-range order and precise positional control in naturally self-assembled nanostructures.
- Data storage media generally include a servo area and a bit area.
- the servo area includes information that is used to control the position of a recording head and the timing of read and write operations.
- the bit area is used to store information that is written to and read from the media.
- various embodiments allow the integration of self-assembly processes into nano-imprint template fabrication of bit patterned media (BPM) for both a bit area having high-density periodic dot patterns and a servo area having medium-to-high density periodic/non-periodic dot/line patterns.
- BPM bit patterned media
- some embodiments use a substrate structure with a chemical contrast surface pattern that can be used to direct the self-assembly, or self-organization, of an array of nanostructures.
- a chemical contrast substrate refers to a substrate having regions or materials that exhibit different chemical preferences, or affinities, for different components of a block copolymer. The regions or materials can have little topographic difference. The regions or materials serve as alignment features that direct the self-assembly of the nanostructures.
- Self-assembly means the formation of periodic nanostructures of self-assembling materials, such as bloc copolymers and nanoparticles. The periodic nanostructures can form spontaneously in a relatively large area according to thermodynamic properties.
- FIG. 1 schematically illustrates a fabrication process in accordance with one aspect of the disclosure.
- a disc 10 in FIG. 1 , includes a substrate 12 and has a surface pattern 14 formed on the substrate.
- the surface pattern includes a chemical contrast surface pattern having a plurality of regions 16 in or on a surface 18 .
- the regions 16 serve as alignment features for subsequently deposited nanostructures. While only a few regions 16 are shown in FIG. 1 for clarity, it will be appreciated that many more regions 16 may be used in a practical device.
- the regions and surface have different affinities for material that are to be subsequently deposited on the substrate, and serve to direct the position and/or orientation of nanostructures.
- the regions 16 can be created by conventional lithography, such as e-beam lithography, nano-imprinting, extreme-ultraviolet (EUV) lithography, 193 nm lithography, 248 nm lithography, X-ray lithography, etc.
- conventional lithography such as e-beam lithography, nano-imprinting, extreme-ultraviolet (EUV) lithography, 193 nm lithography, 248 nm lithography, X-ray lithography, etc.
- the half-pitch of the surface pattern 14 can be, for example, tens to hundreds of nanometers.
- the regions 16 have a substantially circular shape in the plane of the surface 18 .
- the regions 16 are also referred to as dots.
- a self-assembled material is used to fabricate a pattern 20 , whose long-range order and positional accuracy is directed by surface pattern 14 .
- the self-assembled pattern is fabricated using block copolymers.
- the components of the block copolymer will position themselves on the surface of the substrate in a pattern that is directed by the chemical contrast pattern of the substrate.
- One domain of the block copolymer can be removed to leave the domains 22 in the pattern 20 .
- the remaining domains 22 have a substantially spherical shape.
- the period ratio between substrate pattern and block copolymer pattern can vary in a range from 1:1 to 10:1.
- the lattice structure in substrate chemical contrast pattern is not necessarily the same as that in the block copolymer pattern.
- the chemical contrast pattern need not be periodic.
- the size of the alignment dots 16 is smaller than the size of the block copolymer domain 22 when measured in a lateral direction, and the volume of the alignment dots is much smaller than that of the block copolymer domains.
- FIG. 2 is a schematic representation of a block copolymer 30 .
- the block copolymer includes a major component 32 and a minor component 34 .
- FIG. 3 is a cross-sectional view of a portion of a chemically patterned substrate 40 .
- a polymer brush layer 42 is formed on a surface 44 of the substrate.
- openings 46 , 48 are formed in the polymer brush layer.
- the substrate is formed of a material having an affinity to a first component of a block copolymer
- the polymer brush layer 42 is formed of a material having an affinity to a second component of the block copolymer.
- FIG. 4 is a cross-sectional view of a portion of a chemically patterned substrate 50 .
- a polymer brush layer 52 is formed on a surface 54 of the substrate.
- nanoposts 56 , 58 are formed on the polymer brush layer.
- the polymer brush layer is formed of a material having an affinity to a first component of a block copolymer
- the nanoposts are formed of a material having an affinity to a second component of the block copolymer.
- the polymer brush layer can be comprised of polystyrene (for copolymers with polystyrene as the major blocks).
- the nanoposts can be comprised of SiOx or various metals, such as tantalum, chromium, titanium, etc.
- a block copolymer can be deposited on the patterned surface via spin-coating from a dilute solution in general solvents like toluene, forming monolayered spheres (for sphere-form block copolymers) or lying-down cylinders (for cylinder-form block copolymers), and one domain of the block copolymer can be removed, using one of several known techniques, to leave a plurality of nanostructures in the form of dots (or holes) or lines (or trenches).
- Block copolymer nanostructures can be used to form structures having half-pitch domain sizes in the order of about 5 TIm to about 50 TIm. However, these block copolymer nanostructures usually lack long-range order. In one aspect, this disclosure addresses the poor long-range order issue by using a substrate having a surface pattern with a chemical contrast to promote long-range order in block copolymer nanostructures.
- the block copolymer can include two organic blocks (e.g., polystyreneblock-polymethylmethacrylate), or one organic block and one inorganic block (e.g., polystyrene-block-polydimethylsiloxane).
- One of the domains can be removed by UV degradation followed by a wet rinse. For example, upon UV exposure, polymethylmethacrylate is degraded while polystyrene is cross-linked.
- oxygen plasma can be used to remove organic components. Polydimethylsiloxane has good resistance to oxygen plasma.
- the substrate pattern with chemical contrast and customized pattern layout can be used to direct the positioning of self-assembled nanodomains with domain periods of 25 TIm or less ( ⁇ 1 Tdot/in 2 ).
- This substrate chemical pattern can be generated by various advanced lithographic techniques, such as e-beam, nano-imprint, EUV, 193 TIm, 248 TIm, X-ray, etc.
- block copolymers are used as examples here, the self-assembled material is not limited to block copolymers, and it can be any self-assembling materials with at least two chemically distinct components, e.g., chemically functionalized nanoparticles and nanotubes.
- FIGS. 5-7 are schematic representations of substrate dot patterns with various periodic lattice structures, where Ls is the period (i.e., the distance between alignment dots) in substrate pattern, Lsx is the period in an X direction, and Lsy is the period in a Y direction of a Cartesian co-ordinate system.
- the period of the substrate pattern is not necessarily equal to the domain period (IX) in a natural block copolymer pattern, which is helpful to release the pressure of conventional lithographic technology used to generate the substrate pattern, for example bye-beam lithography or optical lithography.
- the natural pattern of self-assembled materials refers to the self-assembled nanostructure formed without the guidance of external fields, such as a substrate topographic pattern or chemical contrast pattern. With a method described here, only a sparse substrate pattern (e.g., chemical contrast) needs to be generated by conventional lithography, which will be used to direct a dense self-assembled pattern. Thus, self-assembly releases the resolution pressure of conventional lithography.
- the pattern multiplication (i.e., the ratio of substrate pattern period and block copolymer pattern period) ranges from about one to about 10.
- the ratio of 10 can be used if a single grain of 1 O ⁇ 10 block copolymer domains can be typically formed in a natural block copolymer nanopattern without any surface guidance and thus in the form of multi-grain structures.
- Such a pattern multiplication is useful for patterned media fabrication having an areal dots density of 1-2 Tdot/in 2 and beyond.
- the patterning resolution of this method is only limited by the properties of available self-assembling materials, which have half-pitch dimensions of about 4 nm to about 50 nm for block copolymers, about 3 run to about 10 run for nanoparticles, and about 1 run to about 5 run for nanotubes, corresponding to areal densities 1-50 Tdot/in 2 .
- FIGS. 8-10 are schematic representations of block copolymer patterns directed by periodic substrate patterns with same or different lattice structures.
- FIG. 8 shows a pattern of nanostructures formed on a substrate having alignment dots at the positions indicated by item number 60 .
- the pattern of alignment dots in FIG. 8 is not limited to a 3 ⁇ multiplication.
- FIG. 9 shows a pattern of nanostructures formed on a substrate having alignment dots at the positions indicated by item number 62 .
- the pattern of alignment dots in FIG. 9 is not limited to a 3 ⁇ multiplication.
- FIG. 8 shows a pattern of nanostructures formed on a substrate having alignment dots at the positions indicated by item number 64 .
- the pattern of alignment dots in FIG. 10 is not limited to a 3 ⁇ multiplication.
- the lattice structure of the substrate pattern can also be different from that of naturally self-assembled structures.
- substrate patterns with hexagon, stagger, or square array are all able to align block copolymer spherical/cylindrical domains with a naturally hexagon lattice.
- the substrate pattern need not be periodic, as long as it can direct long-range ordering of block copolymer domain structures by pinning some block copolymer nanodomains to the underlying substrate at some spots.
- FIG. 11 is a schematic representation of a block copolymer pattern directed by a non-periodic substrate pattern having alignment dots at the positions indicated by item number 66 .
- the average dimension for Ls is ⁇ Ls>, and ⁇ Ls> is in a range from about 2 Lo to about 10 Lo.
- the substrate pattern can be created by optical lithography.
- a substrate having a chemical contrast surface can include alternating hydrophobic/hydrophilic regions or alternating polar/non-polar regions having a distinct affinity to distinct blocks in the copolymer.
- Self-assembled nanodot arrays can be directed by a substrate chemical pattern with pattern pitches that are much larger than the pitches of the nanodot array.
- a spherical block copolymer self-assembled on a substrate hexagon dot pattern with a low-topography chemical contrast highly addressable block copolymer dot arrays with 24 nm pitch (1.3 Tdot/in 2 ) directed by substrate dot arrays with a periodicity of 24 nm/48 nm/72 nm/96 nm have been fabricated.
- directed >2 Tdot/in 2 dot arrays have also been successfully demonstrated.
- the dots are arranged in the array format of FIG. 5 .
- this disclosure includes a spherical block copolymer without the concern of neutral surface wetting to generate an addressable dot array, which is in thermodynamic equilibrium and thus intrinsically has a low defect density and long-term stability.
- FIG. 12 is a photomicrograph of a portion of a patterned media in accordance with an aspect of the present disclosure.
- FIG. 12 shows a 1.3 Tdot/in 2 spherical PSPDMS block copolymer pattern directed by a hexagon substrate pattern with 3 ⁇ period.
- FIG. 13 is a schematic cross-sectional view of a portion of a patterned media similar to that shown in FIG. 12 .
- a substrate 70 with a chemically contrasting surface 72 includes a polymer brush layer 74 and openings 76 , 78 in the polymer brush layer.
- a block copolymer 80 is deposited on the chemically contrasting surface.
- the block copolymer includes a plurality of substantially spherical domains 82 , 84 , 86 and 88 of a first component in a second component 90 . Domains 82 and 88 have an affinity to the substrate and therefore form at the locations of the openings in the brush layer.
- FIG. 14 is a schematic cross-sectional view of the portion of the patterned media of FIG. 13 , after the second component has been substantially removed.
- FIG. 15 is a photomicrograph of a cylindrical poly(styrene-dimethyl siloxane) (PS-PDMS) block copolymer pattern directed by a substrate dot pattern.
- PS-PDMS poly(styrene-dimethyl siloxane)
- the chemical contrast pattern on the substrate includes a plurality of dots 96 as shown in FIG. 16 .
- the cylinders attach to the pattern dots and lie in a direction substantially parallel to the patterned surface.
- FIGS. 17-19 are schematic representations of a cross-section of a patterned media constructed with a cylindrical block copolymer in accordance with an aspect of the present disclosure.
- FIG. 17 shows a cross-sectional schematic view in cross-track direction.
- a substrate 100 with a chemically contrasting surface 102 includes a polymer brush layer 104 and openings 106 in the polymer brush layer.
- a cylindrical block copolymer 108 is deposited on the chemically contrasting surface.
- the block copolymer includes a plurality of substantially cylindrical domains 110 , 112 and 114 of a first component in a second component 116 . Domains 110 and 114 have an affinity to the substrate and therefore form at the locations of the openings in the brush polymer layer.
- FIG. 18 is a schematic cross-sectional view of the portion of the patterned media of FIG. 17 , after the second component has been substantially removed.
- FIG. 19 is a cross-sectional schematic view of the structure of FIG. 18 in the down-track direction.
- the block copolymer materials can be any spherical (for a dot array of nanostructures) or cylindrical (for a dot or line array of nanostructures) block copolymers with two (or more) highly immiscible blocks/components, A and B (or more), which can form nanostructures with domain spacings of 25 nanometers, nm or less, such as polystyrene polymethylmethacrylate (PS-PMMA) (down to ⁇ 20-25 nm), poly(styrene-dimethyl siloxane) (PS-PDMS)(down to about 10 nm), polystyrene-poly(ethylene oxide) (PS-PEO) (down to about 15 nm), PS-P2VP (down to about 12 nm), polystyrene-block-poly (4-vinylpyridine) (PS-P4VP) (down to about 15 nm), etc.
- PS-PMMA polystyrene polymethylmethacrylate
- the block copolymer nanostructure can be directly used as a recording media if one component/block includes magnetic elements, such like cobalt, iron, etc.
- the self-assembled nanodomains can be integrated into BPM nanoimprint template fabrication including both a regular bit pattern and a non-regular servo pattern as shown in FIG. 20 .
- FIG. 20 is a schematic representation of a data storage disc template 120 in accordance with an aspect of the present disclosure.
- the disc template includes a plurality of tracks 122 , only one of which is shown.
- Each track includes a plurality of data bit areas 124 , and a plurality of servo areas 126 .
- the data bit areas can be fabricated using the process described herein.
- the servo areas can be fabricated using a lithographic process, such as e-beam writing.
- FIG. 21 is a process flow diagram illustrating a method for using directed self-assembled block copolymer nanostructures in BPM template fabrication including both a bit pattern and a servo pattern.
- e-beam writing (EBW) is used to generate a servo pattern in the servo area
- a self-assembly material/process is used to prepare a high-density dot array in the bit area.
- Block 130 shows that the method starts by coating a substrate with a thin polymer brush layer.
- the thin polymer brush layer can have a thickness of about 1 nm to about 10 nm.
- the thin polymer brush layer is then coated with a photoresist layer having, for example, a thickness of about 20 nm to about 50 nm.
- the photoresist can be patterned using known techniques to include a regular dot pattern (in a bit area) and a non-regular servo pattern (in a servo area).
- the photoresist can be patterned using, for example, e-beam lithography, optical lithography, etc. (block 132 ).
- a first evaporation and liftoff process can be used to form a first hard mask pattern in both the bit and servo areas (using for example, chromium, tantalum, etc.).
- the regular dot pattern in the bit area will be used as a substrate pattern to guide a subsequently applied block copolymer pattern and the non-regular servo pattern in servo area will be used as final servo pattern (block 134 ).
- Block 136 shows that the block copolymers are coated and annealed (e.g., via a thermal/solvent process) to form a highly ordered block copolymer pattern in the bit area directed by the hard mask dot pattern formed previously.
- Block 138 shows that a second evaporation and liftoff process can be used to form a second hard mask pattern in the bit area, which may partially overlap with a first hard mask pattern in some spots.
- the final hard mask patterns including a bit pattern (from the second hard mask pattern) and a servo pattern (from the first hard mask pattern) are transferred into the substrate (that may be quartz, for an ultraviolet (UV) imprint) by etching (or other methods), and all hard mask patterns can be removed by a wet etch, as shown in block 140 .
- the substrate that may be quartz, for an ultraviolet (UV) imprint
- the method illustrated in FIG. 21 can be integrated into the fabrication of BPM nanoimprint master templates including both a bit pattern (having a regular period, high pattern density, single shape, tight size/position sigma) and a servo pattern (that can be non-periodic or periodic, with a moderate-to-high pattern density, flexible shape, etc.).
- a directed self-assembled pattern can be used for the bit region and an e-beam defined pattern can be used for the servo region.
- the block copolymer can include two organic blocks (e.g., polystyreneblock-polymethylmethacrylate) or one organic block, one inorganic block (e.g., polystyrene-block-polydimethylsiloxane).
- One of the domains can be removed by UV degradation followed by a wet rinse. For example, upon UV exposure, polymethylmethacrylate is degraded while polystyrene is cross-linked.
- oxygen plasma can be used to remove organic components in a hybrid organic/inorganic block copolymer.
- the inorganic block i.e., polydimethylsiloxane
- spherical block copolymers are directed by a chemical contrast substrate pattern with a customized dot pattern layout to generate highly ordered dense dot arrays with ultra-high pattern densities.
- cylindrical block copolymers are directed by a chemical contrast substrate pattern with a customized dot pattern layout to generate highly ordered line arrays with high pattern densities.
- the highly ordered dot array generated by using the directed self-assembly method described above can be integrated with an e-beam lithography process to fabricate a full-disc BPM template including both a servo pattern and a bit pattern.
- this disclosure provides apparatus fabricated using one of the described methods.
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US10529366B2 (en) | 2017-04-11 | 2020-01-07 | Seagate Technology Llc | Sidewall guided directed self assembly data storage medium |
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US10529366B2 (en) | 2017-04-11 | 2020-01-07 | Seagate Technology Llc | Sidewall guided directed self assembly data storage medium |
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