US9112031B2 - Reduced resistance finFET device with late spacer self aligned contact - Google Patents
Reduced resistance finFET device with late spacer self aligned contact Download PDFInfo
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- US9112031B2 US9112031B2 US14/075,033 US201314075033A US9112031B2 US 9112031 B2 US9112031 B2 US 9112031B2 US 201314075033 A US201314075033 A US 201314075033A US 9112031 B2 US9112031 B2 US 9112031B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
Definitions
- the present invention relates generally to the fabrication of semiconductor devices, and more particularly to the fabrication of a finFET device.
- FETs Field effect transistors
- SOI silicon-on-insulator
- FET devices generally consist of a source, a drain, a gate, and a channel between the source and drain.
- the gate is separated from the channel by a thin insulating layer, typically of silicon oxide, called the field or gate oxide.
- a voltage drop generated by the gate across the oxide layer induces a conducting channel between the source and drain thereby controlling the current flow between the source and the drain.
- Current integrated circuit designs use complementary metal-oxide-semiconductor (CMOS) technology that use complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.
- CMOS complementary metal-oxide-semiconductor
- MOSFETs metal oxide semiconductor field effect transistors
- a finFET is a non-planar FET.
- the “fin” is a narrow, vertical silicon base channel between the source and the drain.
- the fin is covered by the thin gate oxide and surrounded on two or three sides by an overlying gate structure.
- the multiple surfaces of the gate allow for more effective suppression of “off-state” leakage current.
- the multiple surfaces of the gate also allow enhanced current in the “on” state, also known as drive current.
- Polysilicon has been a preferred material for use as a gate electrode due to its thermal resistive properties and ability to withstand subsequent high temperature processes. Due to the higher resistivity of the polysilicon verses metal materials, a polysilicon gate may operate at much slower speeds than gates made of a metallic material. A further performance enhancement uses a replacement metal gate (RMG). This process removes the original polysilicon gate and replaces it with a metal gate material. A high-k dielectric can also be used as the gate oxide as a part of the RMG process.
- RMG replacement metal gate
- Embodiments of the present invention provide a reduced resistance finFET device and include a method of fabricating the same.
- a fin is provided in a semiconductor substrate.
- a dummy gate is formed over a portion of the fin such that the dummy gate does not initiate selective epitaxy.
- a source/drain region is formed on the fin such that the source/drain region directly contacts the dummy gate.
- the dummy gate is replaced with a replacement metal gate structure that directly contacts the source/drain region.
- a portion of the fin that includes a portion of the source/drain region is replaced with a contact material.
- a spacer is formed on at least one sidewall of the gate structure, and over at least a portion of the source/drain region.
- the replacement metal gate structure includes a high-k material that directly contacts the source/drain region.
- the replacement metal gate structure may also include a workfunction material over the high-k layer.
- FIG. 1 depicts a cross-sectional view of a semiconductor substrate upon which a finFET structure may be fabricated, in accordance with embodiments of the invention.
- FIG. 2A depicts a perspective view of an example of the fins of a finFET structure, in accordance with an embodiment of the present invention.
- FIG. 2B is a cross-sectional view of FIG. 2A taken through section line 2 B- 2 B.
- FIG. 2C is a cross-sectional view of FIG. 2A taken through section line 2 C- 2 C.
- FIG. 3A and 3B depict two cross-sectional views of the deposition of an oxide layer followed by the deposition of a dummy gate layer, in accordance with an embodiment of the present invention.
- FIG. 4A depicts a planar view of the finFET structure subsequent to formation of a dummy gate and deposition of an epitaxial layer, in accordance with an embodiment of the present invention.
- FIG. 4B is a cross-sectional view of FIG. 4A taken through section line 4 B- 4 B that shows an epitaxial layer deposited on portions of a fin.
- FIG. 4C is a cross-sectional view of FIG. 4A taken through section line 4 C- 4 C that shows a dummy gate formed over a fin.
- FIG. 4D is a cross-sectional view of FIG. 4A taken through section line 4 D- 4 D that shows the faceted growth of an epitaxial layer over a fin.
- FIG. 5A depicts a planar view of the deposition of an insulator layer over an epitaxial layer of the finFET device, in accordance with an embodiment of the present invention.
- FIG. 5B is a cross-sectional view of FIG. 5A taken through section line 5 B- 5 B that shows a deposited insulator layer over an epitaxial layer.
- FIG. 6A depicts a planar view of the replacement metal gate of the finFET device, in accordance with an embodiment of the present invention.
- FIG. 6B is a cross-sectional view of FIG. 6A taken through section line 6 B- 6 B that shows the removal of excess replacement gate materials from the surface of an insulator layer.
- FIG. 7A depicts a planar view of a hard mask cap deposited over the replacement metal gate of the finFET device, in accordance with an embodiment of the present invention.
- FIG. 7B is a cross-sectional view of FIG. 7A taken through section line 7 B- 7 B that shows the removal of excess hard mask material from the surface of an insulator layer.
- FIG. 8A depicts a planar view of the removal of at least a top portion of an insulator layer and the formation of a spacer, in accordance with an embodiment of the present invention.
- FIG. 8B is a cross-sectional view of FIG. 8A taken through section line 8 B- 8 B that shows the formation of a spacer along the sidewall of a RMG and, at least a portion of an epitaxial layer.
- FIG. 9A depicts a planar view of the deposition of a second insulator layer followed by the formation of a contact opening, in accordance with an embodiment of the present invention.
- FIG. 9B is a cross-sectional view of FIG. 9A taken through section line 9 B- 9 B that shows the formation of a contact opening.
- FIG. 10A depicts a planar view of the deposition of a source/drain contact, in accordance with an embodiment of the present invention.
- FIG. 10B is a cross-sectional view of FIG. 10A taken through section line 10 B- 10 B that shows the removal of the excess contact metal.
- Embodiments of the present invention generally provide a reduced resistance finFET device with a late spacer, wherein, forming a gate spacer following the deposition of the source and drain material can act to reduce the channel length of the finFET device, thereby reducing the electrical resistance of the device.
- a gate spacer following the deposition of the source and drain material can act to reduce the channel length of the finFET device, thereby reducing the electrical resistance of the device.
- references in the specification to “one embodiment”, “an embodiment”, “an example embodiment”, etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the art to affect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
- the terms “upper”, “lower”, “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, and derivatives thereof shall relate to the disclosed structures and methods, as oriented in the drawing figures.
- the terms “overlying”, “atop”, “positioned on” or “positioned atop” mean that a first element, such as a first structure, is present on a second element, such as a second structure, wherein intervening elements, such as an interface structure may be present between the first element and the second element.
- the term “direct contact” means that a first element, such as a first structure, and a second element, such as a second structure, are connected without any intermediary conducting, insulating or semiconductor layers at the interface of the two elements.
- FIG. 1 depicts a cross-sectional view of semiconductor substrate 100 upon which a finFET structure may be fabricated, in accordance with embodiments of the invention.
- Semiconductor substrate 100 is a semiconductor material, preferably a silicon-containing material including, but not limited to, silicon, silicon germanium alloys, silicon carbon alloys, or silicon germanium carbon alloys.
- the finFET structure is built on a silicon-on-insulator (SOI) substrate in which semiconductor substrate 100 includes buried oxide layer 102 and semiconductor layer 104 on buried oxide layer 102 .
- SOI silicon-on-insulator
- semiconductor layer 104 is single crystal silicon with a typical thickness of about 5 nm to about 40 nm.
- the invention is not limited to SOI construction, and that other semiconductor substrates may be used, for example, silicon-containing materials including, but not limited to, silicon, silicon germanium alloys, silicon carbon alloys, or silicon germanium carbon alloys.
- FIG. 2A depicts a perspective view of an example of the fins of a finFET structure in accordance with an embodiment of the present invention.
- Fin 200 can be fabricated from semiconductor layer 104 using standard lithographic and etching processes known to someone skilled in the art. The height of fin 200 is determined by the thickness of semiconductor layer 104 of FIG. 1 . Semiconductor layer 104 or fin 200 can be further etched to reduce the thickness as determined by the design requirements of the device. The width of fin 200 is typically about 2 nm to about 40 nm.
- FIG. 2B is a cross-sectional view of FIG. 2A taken through section line 2 B- 2 B.
- FIG. 2C is a cross-sectional view of FIG. 2A taken through section line 2 C- 2 C.
- FIGS. 3A and 3B depict the deposition of oxide layer 300 followed by the deposition of dummy gate layer 302 in accordance with an embodiment of the present invention.
- Oxide layer 300 may be formed by thermally oxidizing the exposed surface of fin 200 , or may be deposited onto fin 200 using, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).
- oxide layer 300 is silicon dioxide (SiO 2 ) of a thickness of about 1 nm to about 5 nm, and acts to protect fin 200 during subsequent gate formation.
- dummy gate layer 302 is deposited over oxide layer 300 and over fin 200 using, for example, low pressure chemical vapor deposition (LPCVD), and is about 30 nm to about 200 nm thick, preferably about 100 nm thick. Following the deposition, dummy gate layer 302 can be planarized to facilitate subsequent gate formation steps, using for example chemical-mechanical planarization (CMP). CMP may use a combination of chemical etching and mechanical polishing to smooth the surface and even out any irregular topography.
- CMP chemical-mechanical planarization
- Dummy gate layer 302 is composed of a material that can act as a dummy gate in a replacement metal gate (RMG) process, for example, silicon nitride (SiN), and further, does not initiate crystal growth in a process such as selective epitaxy.
- RMG replacement metal gate
- Other dummy gate layer 302 materials include, but are not limited to hafnium oxide (HfO 2 ) or other dielectric materials.
- FIG. 4A depicts a planar view of the finFET structure subsequent to formation of dummy gate 400 and deposition of epitaxial layer 402 , in accordance with an embodiment of the present invention.
- Dummy gate 400 is created by etching dummy gate layer 302 of FIG. 3A using, for example, anisotropic dry etching.
- standard lithographic processes are used to define the pattern of dummy gate 400 in a layer of photoresist (not shown) deposited on gate layer 302 of FIG. 3A . It is understood that intermediate hard mask layers (not shown) may be used between the photoresist layer and dummy gate layer 302 .
- the gate pattern may then be formed in dummy gate layer 302 by removing dummy gate layer 302 from the areas not protected by the pattern in the photoresist layer using, for example, reactive ion etching (RIE).
- RIE uses chemically reactive plasma, generated by an electromagnetic field, to remove various materials.
- RIE uses chemically reactive plasma, generated by an electromagnetic field, to remove various materials.
- FIG. 4C is a cross-sectional view of FIG. 4A taken through section line 4 C- 4 C that shows dummy gate 400 formed over fin 200 and oxide layer 300 .
- epitaxial layer 402 is deposited on the exposed portions of fin 200 .
- a doped epitaxial layer of n-type or p-type silicon may be grown on the surface of fin 200 using, for example, selective epitaxy, wherein the epitaxial layer grows only from the exposed portion of fin 200 and does not grow from oxide layer 102 or from dummy gate 400 .
- Epitaxial layer 402 is deposited to a thickness of about 10 nm to about 40 nm and is followed by an annealing step whereby the dopant of epitaxial layer 402 diffuses into fin 200 . Annealing can be performed in a fast anneal tool such as a laser anneal or a rapid thermal anneal.
- FIG. 4B is a cross-sectional view of FIG. 4A taken through section line 4 B- 4 B that shows epitaxial layer 402 deposited on portions of fin 200 in areas directly adjacent to dummy gate 400 .
- a spacer is not required on the sidewalls of dummy gate 400 based on the use of a dummy gate material such as SiN that does not initiate the epitaxial growth.
- the type of dopant is selected based on the type of MOSFET.
- the source and drain regions of an nFET type of transistor are doped with a Group V material such as phosphorous, arsenic, or antimony.
- FIG. 4D is a cross-sectional view of FIG. 4A taken through section line 4 D- 4 D that shows the faceted growth of epitaxial layer 402 over fin 200 .
- FIG. 5A depicts a planar view of the deposition of insulator layer 500 over epitaxial layer 402 of the finFET device, in accordance with an embodiment of the present invention.
- Insulator layer 500 can be any insulating material such as SiO2 deposited over epitaxial layer 402 and dummy gate 400 using, for example, CVD or ALD.
- insulator layer 500 is deposited to a thickness greater than the thickness of dummy gate 400 .
- the surface of insulator layer 500 can then be planarized using CMP. CMP can remove the top portion of insulator layer 500 to a height substantially coplanar to the top surface of dummy gate 400 , thus exposing the top portion of dummy gate 400 .
- FIG. 5B is a cross-sectional view of FIG. 5A taken through section line 5 B- 5 B that shows the deposited insulator layer 500 over epitaxial layer 402 , planarized to the top of dummy gate 400 .
- FIG. 6A depicts a planar view of the replacement metal gate (RMG) 602 of the finFET device, in accordance with an embodiment of the present invention.
- Dummy gate 400 of FIGS. 5A and 5B may be removed using a wet chemical etch, such as potassium hydroxide (KOH), or ammonium hydroxide (NH 4 OH), or a dry etch such as RIE, leaving a gate trench wherein the gate trench sidewalls include portions of epitaxial layer 402 and insulator layer 500 .
- KOH potassium hydroxide
- NH 4 OH ammonium hydroxide
- RIE dry etch
- a stack of materials for RMG 602 known to someone skilled in the art, is deposited using, for example, CVD or ALD and may include a high-k dielectric material.
- the RMG process starts with the deposition of high-k gate oxide layer 600 of a high-k dielectric material such as hafnium dioxide.
- High-k gate oxide layer 600 is deposited over the surface of insulator layer 500 , the exposed sidewall of insulator layer 500 , exposed portions of epitaxial layer 402 and exposed portions of fin 200 .
- RMG 602 may include various layers as determined by electrical performance requirements of the finFET device including a workfunction setting metal and a fill metal.
- the workfunction setting metal may be a material such as titanium nitride (TiN) or tantalum nitride (TaN) deposited over high-k gate oxide layer 600 .
- FIG. 6B is a cross-sectional view of FIG. 6A taken through section line 6 B- 6 B that shows the removal of excess replacement gate materials from the surface of insulator layer 500 .
- CMP may be used to remove the excess replacement gate materials that include high-k gate oxide layer 600 and the various layers of RMG 602 that are not in the gate trench, from the surface of insulator layer 500 .
- FIG. 7A depicts a planar view of hard mask cap 700 deposited over RMG 602 of the finFET device in accordance with an embodiment of the present invention.
- the hard mask cap 700 may be provided to insulate RMG 602 and to protect RMG 602 during subsequent processing, such as a contact etch, to form a self-aligned contact.
- RMG 602 can be recessed from the surface of insulator layer 500 using a timed etch, for example, a timed RIE.
- a hard mask material such as SiN is deposited on the surface of insulator layer 500 , filling the recess created by the timed etch of RMG 602 .
- FIG. 7B is a cross-sectional view of FIG.
- a planarizing process such as CMP, can be used to remove excess hard mask material from the surface of insulator layer 500 leaving hard mask cap 700 over RMG 602 .
- FIG. 8A depicts a planar view of the removal of at least a top portion of insulator layer 500 and the formation of spacer 800 , in accordance with an embodiment of the present invention.
- a timed etch using, for example, RIE can be used to remove at least the top portion of insulator layer 500 , exposing the sidewalls of RMG 602 .
- the sidewalls of RMG 602 are exposed to allow for the formation of spacer 800 on the sidewall of RMG 602 and, at least a portion of, epitaxial layer 402 .
- forming spacer 800 may include depositing a conformal layer (not shown) of insulating material, such as silicon nitride, over the finFET device including RMG 602 , epitaxial layer 402 , hard mask cap 700 , and the remaining portions of insulator layer 500 , such that the thickness of the deposited layer on the sidewall of RMG 602 is substantially the same as the thickness of the deposited layer on the surface of epitaxial layer 402 and insulator layer 500 .
- An anisotropic etch process wherein the etch rate in the downward direction is greater than the etch rate in the lateral directions, may be used to remove the insulating layer, thereby forming spacer 800 .
- FIG. 8B is a cross-sectional view of FIG. 8A taken through section line 8 B- 8 B that shows the formation of spacer 800 along the sidewall of RMG 602 and, at least a portion of, epitaxial layer 402 .
- FIG. 9A depicts a planar view of the deposition of second insulator layer 900 followed by the formation of contact opening 902 , in accordance with an embodiment of the present invention.
- Second insulator layer 900 can be any insulating material such as SiO2 deposited over insulator layer 500 , hard mask cap 700 over RMG 602 , and spacer 800 , using, for example, CVD or ALD.
- second insulator layer 900 is deposited to a thickness greater than the thickness of RMG 602 plus hard mask cap 700 .
- the top surface of second insulator layer 900 can then be planarized using chemical CMP. CMP can remove the top portion of second insulator layer 900 to a height substantially coplanar to the top surface of hard mask cap 700 over RMG 602 , facilitating subsequent imaging processes.
- contact opening 902 is formed.
- standard lithographic processes are used to define the pattern of contact opening 902 in a layer of photoresist (not shown) deposited over second insulator layer 900 and hard mask cap 700 .
- additional layers such as a hard mask layer, may be included between the photoresist layer and second insulator layer 900 to facilitate the imaging and etch processes.
- FIG. 9B is a cross-sectional view of FIG. 9A taken through section line 9 B- 9 B that shows the formation of contact opening 902 .
- contact opening 902 is started by removing second insulator layer 900 and any remaining portions of insulator layer 500 from the areas not protected by the pattern in the photoresist layer, using for example RIE. Removal of second insulator layer 900 and the remaining portions of insulator layer 500 exposes epitaxial layer 402 and buried oxide layer 102 .
- the exposed portions of epitaxial layer 402 which includes fin 200 can be removed using a dry etch, such as RIE, or a wet etch, such as tetramethylammonium hydroxide (TMAH) thereby exposing a sidewall of epitaxial layer 402 which includes fin 200 , cut perpendicular to the direction of fin 200 .
- contact opening 902 acts to further define contact opening 902 by acting as an additional etch mask, protecting the portions of epitaxial layer 402 and fin 200 under spacer 800 , during the etching of epitaxial layer 402 and fin 200 , and thereby self-aligning contact opening 902 with respect to gate 602 and spacer 800 .
- the pattern of contact opening 902 is defined by spacer 800 without the use of a lithographic process.
- FIG. 10A depicts a planar view of the deposition of source/drain contact (s/d contact) 1002 , in accordance with an embodiment of the present invention.
- S/D contact 1002 is formed in previously created contact opening 902 of FIG. 9A-B .
- a thin layer of metal silicide may be deposited on all exposed silicon surfaces, including the exposed portions of epitaxial layer 402 , using, for example cobalt, tungsten or nickel, to form liner 1000 .
- Contact opening 902 can then be filled by depositing a contact metal such as tungsten or aluminum.
- FIG. 10B is a cross-sectional view of FIG. 10A taken through section line 10 B- 10 B that shows the removal of the excess contact metal.
- CMP may be used to remove the excess contact metal from the top surface of second insulator layer 900 resulting in s/d contact 1002 that connects to a perpendicular sidewall of epitaxial layer 402 .
- the resulting semiconductor device may be included on a semiconductor substrate consisting of many devices and one or more wiring levels to form an integrated circuit chip.
- the resulting integrated circuit chip(s) can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections).
- the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product.
- the end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
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