US9106053B2 - Distributed feedback surface emitting laser - Google Patents
Distributed feedback surface emitting laser Download PDFInfo
- Publication number
- US9106053B2 US9106053B2 US13/652,136 US201213652136A US9106053B2 US 9106053 B2 US9106053 B2 US 9106053B2 US 201213652136 A US201213652136 A US 201213652136A US 9106053 B2 US9106053 B2 US 9106053B2
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- 230000003287 optical Effects 0.000 claims abstract description 231
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 238000002310 reflectometry Methods 0.000 claims description 25
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound 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[Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005284 excitation Effects 0.000 claims description 7
- 238000005086 pumping Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 30
- 230000000737 periodic Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound 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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound 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O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound 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- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials 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Images
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
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- H01S5/00—Semiconductor lasers
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- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
Abstract
A semiconductor surface emitting laser (SEL) includes an active zone comprising quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR). The active zone including a plurality of the DBR optical pairs is configured to provide optical feedback for the SEL at λlase.
Description
This invention was made with Government support under U.S. Army Cooperative Agreement No. W911NF-10-02-0008 awarded by the U.S. Defense Threat Reduction Agency (DTRA). The Government has certain rights in this invention.
Semiconductor lasers require optical gain, optical feedback, and a source of energy to initiate and sustain lasing. Surface emitting lasers (SELs) have recently been used as compact semiconductor lasers. Typically, in this type of laser, the laser light resonates between two reflective surfaces perpendicularly through the gain medium and the laser light is emitted perpendicularly to the laser surface. The two reflective surfaces of the laser, e.g. top and bottom distributed Bragg reflectors (DBRs), form the laser cavity and are separated by a thickness which is a multiple of half a wavelength of the laser light. The gain medium, which may comprise one or more quantum wells, for example, is arranged within the laser cavity. Energy is supplied to the gain medium by optical pumping or e-beam excitation, for example, creating holes and electrons that recombine within the gain medium to generate photons.
Some embodiments involve a semiconductor surface emitting laser (SEL) that includes an active zone including quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR), the active zone including a plurality of the DBR optical pairs and configured to provide optical feedback for the SEL at λlase.
According to some aspects, λlase is in a range between about 250 nm and about 550 nm.
According to some aspects, the SEL includes an optical pump source configured to emit pump light at pump wavelength, λpump to optically pump the SEL. In some cases, the pump source may be configured to provide in-well pumping of the SEL In some cases, the pump source may be configured to provide barrier pumping of the SEL.
According to some aspects, the SEL includes electron beam source configured to emit an electron beam as excitation source for the active zone of the SEL.
In some implementations, the active zone comprises one or more mesa structures. optical pump source may be used to optically pump the SEL side walls of the one or more mesa structures.
According to some aspects, one or more additional DBRs are used that do not provide optical gain disposed adjacent to the active zone. For example, the one or more additional DBRs may comprise only one DBR.
According to some aspects, the active zone includes one or more first optical pairs that provide the optical gain and the optical feedback interspersed with one or more second optical pairs that provide the optical gain without providing the optical feedback.
According to some aspects, the active zone includes one or more first optical pairs that provide the optical gain and the optical feedback interspersed with one or more third optical pairs that provide the optical feedback without providing the optical gain.
In some embodiments, the active zone includes at least one phase shift element, the phase shift element configured to shift a phase of an optical mode present within the active zone during operation of the SEL. For example, the phase shift element may comprise an optical gain element.
Some embodiments involve a surface emitting laser (SEL), comprising an active zone including quantum well structures, each quantum well structure including one or more quantum wells comprising AlxGa1-xN. The quantum well structures are separated by spacer layers comprising AlyGa1-yN, where y>x The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR. Each quantum well structure provides a high refractive index portion of the optical pair and the spacer layer provides a low refractive index portion of the optical pair. The DBR includes a plurality of the optical pairs and provides optical feedback for the SEL at a lasing wavelength, λlase.
According to some aspects, a number of the optical pairs is sufficient to provide a reflectivity of greater than about 98λ at λlase.
According to some aspects, the active zone is epitaxially grown on a bulk AlN substrate.
Some embodiments involve a semiconductor surface emitting laser (SEL), comprising an active zone including quantum well structures separated by spacer layers. The quantum well structures are configured to provide optical gain for the SEL at a lasing wavelength, λlase. Each quantum well structure and an adjacent spacer layer are configured to form an optical pair of a distributed Bragg reflector (DBR) The active zone includes a plurality of the DBR optical pairs and provides optical feedback for the SEL at λlase. At least some of the quantum well structures are asymmetrical, each asymmetrical quantum well structure having one or more quantum wells and one or more barriers and the one or more quantum wells are not centered between spacer layers adjacent to the quantum well structure.
For example, in some implementations substantially all of the quantum well structures are asymmetrical.
Some implementations include one or more additional DBRs that do not provide optical gain and which are disposed adjacent to the active zone. The one or more additional DBRs may comprise only one DBR.
Some embodiments involve a semiconductor surface emitting laser (SEL). The active zone of the SEL means for providing optical gain for the SEL at a lasing wavelength, λlase and means for providing optical feedback for the SEL at λlase. The means for providing optical gain and the means for providing optical feedback are distributed throughout the active region.
The above summary is not intended to describe each embodiment or every implementation. A more complete understanding will become apparent and appreciated by referring to the following detailed description and claims in conjunction with the accompanying drawings.
Like reference numbers in the various drawings refer to like structures.
Embodiments discussed herein involve distributed feedback SELs (DFB SELs) that include a distributed feedback (DFB) active zone that provides both optical gain and optical feedback for the laser. In the embodiments described herein, both the optical gain and optical feedback provided by the DFB SEL active zone are distributed throughout the active zone. In some embodiments, the DFB SELs described herein rely on one DFB active zone comprising a heterostructure including multiple pairs of gain structures alternating with spacer layers. This heterostructure provides both the optical gain and the optical feedback for the laser and no additional reflectors are used to provide optical feedback and/or no additional gain elements to provide optical gain are used. In some embodiments, a DFB active zone that combines the functions of optical gain and optical feedback is used in combination with additional reflectors and/or additional gain elements.
Combining the optical gain and optical feedback functions into one DFB active zone significantly reduces the complexity of the laser heterostructure and can increase the overall performance. In some embodiments, the laser does not need any additional reflector beyond the reflector provided by the DFB active zone itself. The DFB SEL embodiments discussed herein facilitate the realization of single longitudinal mode semiconductor lasers.
The DFB active zone 130 provides both optical gain and optical feedback for the laser 100. The DFB active zone includes multiple quantum well structures separated by spacer layers. The quantum well structures include one or more quantum wells that provide optical gain for the laser. Each quantum well structure and an adjacent spacer layer are designed so that they function as an optical pair of a distributed Bragg reflector, wherein the distributed Bragg reflector provides the optical feedback for the laser. Thus, the quantum wells of the quantum well structure of each optical pair provide optical gain for the laser while the combination of the quantum well structure and adjacent spacer layer provide optical feedback.
Although the DFB active zone and other semiconductor portions of the laser 100 may be formed from any suitable semiconductor, in some embodiments, the DFB active zone is based on a III-nitride material system, e.g. AlGaN, AlInN, GaInN, AlGaInN, and/or other such materials. The DFB active zone and/or other semiconductor layers can be epitaxially grown on a bulk aluminum nitride (AlN), a gallium nitride (GaN) substrate, or other suitable substrate. In some cases, the DFB active zone and/or other semiconductor layers can be grown on an AlN, AlGaN, GaInN or GaN template disposed on a substrate of Al2O3 (sapphire) or other compatible material.
As illustrated in FIG. 2 , the quantum well structures 118, 128, 138, 148, 158 in this example include double quantum wells, wherein each quantum well 113, 123, 133, 143, 153 is separated from an adjacent quantum well and/or from a spacer layer 111, 121, 131, 141, 151 by a barrier 112, 122, 132, 142, 152. It will be understood, that although the quantum well structures 118, 128, 138, 148, 158 shown in FIG. 2 each include two quantum wells 113, 123, 133, 143, 153, in general, the quantum well structures may include only one quantum well, or may include more than two quantum wells. In the example of FIG. 2 , the quantum wells 113, 123, 133, 143, 153 are centered within each quantum well structure 118, 128, 138, 148, 158 between the spacer layers 111, 121, 131, 141, 151, a configuration referred to herein as “symmetrical.” In the symmetrical configuration of FIG. 2 , all of the barriers 112, 122, 132, 142, 152 within the quantum well structures 118, 128, 138, 148, 158 have the same thickness and all of the quantum wells 113, 123, 133, 143, 153 within the quantum well structures 118, 128, 138, 148, 158 have the same thickness.
In some cases, each layer section of the optical pairs, which is the quantum well structure and the spacer layer, has a geometrical thickness of λlase/4n, where λlase is the wavelength of the laser light in vacuum and n is the refractive index of the layer. For homogeneous spacer layers (a homogeneous spacer layer is one that has the same material throughout the spacer layer), the geometrical thickness is λlase/4 nS, where nS is the refractive index of the spacer material. The geometrical thickness of the quantum well structures is λlase/4neff, and can be calculated for a symmetrical quantum well structure as:
n eff=((N QW *d QW *n QW)+(N BAR *d BAR *n BAR))/(N QW +N BAR *d BAR),
where NQW is the number of quantum wells, dQW is the thickness of the quantum wells, nQW is the refractive index of the quantum wells, NBAR is the number of barriers, dBAR is the thickness of the barriers, and nBAR is the thickness of the barriers.
n eff=((N QW *d QW *n QW)+(N BAR *d BAR *n BAR))/(N QW +N BAR *d BAR),
where NQW is the number of quantum wells, dQW is the thickness of the quantum wells, nQW is the refractive index of the quantum wells, NBAR is the number of barriers, dBAR is the thickness of the barriers, and nBAR is the thickness of the barriers.
For example, consider the active zone of FIG. 2 , designed for laser light having a wavelength λlase=266 nm, with AlN spacer layers, and symmetrical quantum well structures comprising 4.7 nm Al0.5Ga0.5N quantum wells, and 5.1 nm Al0.6Ga0.4N barriers. The geometrical thickness of the spacer layers is 266 nm/4*2.319=28.7 nm, where 2.319 is the refractive index of AlN at λ=266 nm. The geometrical thickness of the quantum well structure is 266 nm/4neff. In this example, the refractive index of Al0.5Ga0.5N at 266 nm is 2.813 and the refractive index of Al0.6Ga0.4N at 266 nm is 2.583. Thus, neff=((2*4.7 nm*2.813)+(3*5.1*2.583))/(2*4.7+3*5.1)=2.670.
In FIG. 2 , the active zone 130 is arranged to provide resonant periodic gain wherein the antinodes of the standing wave electrical field substantially overlap or coincide with the quantum well gain structures. The quantum well structures are spaced at a multiple of one half the laser light wavelength to achieve the resonant periodic gain configuration. The periodicity of the resonant periodic gain configuration, wherein the antinodes of the standing-wave field of the laser light substantially coincide with the quantum well structures, provides a significant increase in the optical gain when compared with similar structures that are non-resonant.
In some optically pumped embodiments, the laser structure is configured such that resonance is achieved at both the laser light and pump light wavelengths to provide both resonant periodic gain by the laser light and resonance enhanced absorption of the pump light. Resonance enhanced absorption occurs when the antinodes of the pump light electromagnetic field substantially coincide with the structures that absorb the pump light. Resonant enhanced absorption can be achieved in two ways. One approach to achieve resonance enhanced absorption involves the use of a laser cavity thickness for which resonances exist at both the pump light wavelength and the laser light wavelength. Another approach to achieve resonance enhanced absorption is to use an off-normal incidence angle for the pump light beam. For example, as shown in FIG. 1 , the pump light 155 may be incident on the surface of the laser 100 at an off normal incidence angle of θ. The use of resonance enhanced absorption for laser structures is described in commonly owned U.S. Pat. No. 8,000,371.
The optimal number of optical pairs in the DFB active zone is dependent on the reflectivity of the DFB active zone that in turn is dependent on the refractive index contrast between the layers of the optical pairs. In general, a suitable reflectivity for the DFB active zone is greater than about 98λ. For the example discussed above (28.7 nm AlN spacer layers, 4.7 nm Al0.5Ga0.5N quantum wells, and 5.1 nm Al0.6Ga0.4N barriers), a suitable number of optical pairs to achieve suitable reflectivity, e.g., greater than about 98%, may range between about 15 and about 30 optical pairs.
Three example SEL structures are discussed below and are illustrated in FIGS. 3-14 . In examples 1-3, a number of quantum well structures are disposed between a substrate and a final barrier and the lasing wavelength is λ=266 nm. In each example, the quantum well thicknesses are selected to be about 5 nm with 50% Al composition in the quantum wells and with 60% Al composition in the barriers. In each case, a spacer layer is disposed between the quantum well structures. The spacer layers have 100% Al composition. The period thicknesses for the three examples are 0.5λ, 1.0λ, and 1.5λ, respectively, where the refractive index is used to determine the physical thicknesses of the layers. In examples 1 and 2, the last barriers have a thickness of 0.25λ for high reflectivity, although other thicknesses for the last barrier may be used. For example, in example 3, the last barrier has a thickness of 0.375λ. The use of a double quantum well structure requires fewer optical pairs to achieve the same reflectivity, leading to a thinner overall thickness for the SEL which is beneficial to keep growth times relatively short and to not exceed the critical thickness. In examples 1-3, reflectivity greater than 98λ is achieved.
1. Al0.6Ga0.4N barrier (424, FIG. 5 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
2. Al0.5Ga0.5N quantum well (425, FIG. 5 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
3. Al0.6Ga0.4N barrier (424, FIG. 5 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
4. Al0.5Ga0.5N quantum well (425, FIG. 5 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
5. Al0.6Ga0.4N barrier (424, FIG. 5 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
6. AlN spacer layer (426, FIG. 5 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 286.8 Å, and an optical thickness of 0.25λ.
1. Al0.6Ga0.4N barrier (824, FIG. 8 ) having a refractive index of 2.83 at 266 nm, a physical thickness of 360.4 Å, and an optical thickness of 0.35λ;
2. Al0.5Ga0.5N quantum well (825, FIG. 8 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
3. Al0.6Ga0.4N barrier (824, FIG. 8 ) having a refractive index of 2.83 at 266 nm, a physical thickness of 360.4 Å, and an optical thickness of 0.35λ;
4. AlN spacer layer (826, FIG. 8 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 286.8 Å, and an optical thickness of 0.25λ.
1. Al0.6Ga0.4N thick barrier (1224, FIG. 13 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 502.1 Å, and an optical thickness of 0.4875λ;
2. Al0.5Ga0.5N quantum well (1225, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
3. Al0.6Ga0.4N thin barrier (1227, FIG. 13 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
4. Al0.5Ga0.5N quantum well (1225, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
5. Al0.6Ga0.4N thick barrier (1224, FIG. 13 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 502.1 Å, and an optical thickness of 0.4875λ;
6. AlN spacer layer (1226, FIG. 13 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 430.1 Å, and an optical thickness of 0.375λ. FIGS. 12 and 13 illustrate plots of the |E|2 electrical field 1210 and refractive index 1220 in the DFB active zone of the SEL of FIG. 11 . FIG. 12 provides plots of the |E|2 electrical field 1210 and refractive index 1220 within the SEL from 0 to 5 μm. FIG. 13 provides an expanded view of the same plots 1210, 1220 within the active region of the SEL. Note that the antinodes 1211 of the |E|2 electrical field 1210 substantially coincide with the quantum well structures 1221 providing resonant periodic gain as previously discussed. FIG. 14 provides a graph 1410 of the reflectivity of the structure of FIG. 11 indicating a reflectivity of 98.0λ at the lasing wavelength λ=266 nm.
Referring back to FIG. 2 , when the device has a design that satisfies certain boundary conditions, the antinodes of the electric field substantially overlap with the quantum wells, and resonant periodic gain can occur in the gain structure that increases the efficiency of the device. In DBRs formed of alternating layers of low and high refractive index materials that do not include gain structures (e.g., quantum wells) the antinodes of the electric field spontaneously occur at the interfaces between the high and low refractive index layers of the optical pairs. In a DFB active zone, there can be some distance between the antinode position in the quantum well structure that satisfies the condition for resonant periodic gain and the interface between the high and low refractive index layers. It can be useful to design the quantum well structure so that the distance between the antinode position within the quantum well structure that provides the optimal resonant periodic gain and the interface between the high and low refractive index layers is decreased. Decreasing the distance between the optimal antinode position for resonant periodic gain and the interface can be accomplished using asymmetrical quantum well structures as described in more detail below in connection with FIGS. 15 and 16 .
In the asymmetrical cases, each layer of the quantum well structure/spacer optical pairs may have a geometrical thickness of λlase/4n, where λlase is the wavelength of the laser light and n is the refractive index of the layer. In some embodiments, the geometrical thickness of the spacer layers is λlase/4nS, where nS is the refractive index of the spacer material. In these embodiments, the geometrical thickness of the quantum well structures is λlase/4neff, where neff can be calculated for an asymmetrical quantum well structure as:
n eff=((Σk=1 K d QWk *n QW)+(Σj=1 J d BAR j *n BAR))/(Σk=1 K d QW k =Σj=1 J d BAR j ),
where K is the total number of quantum wells in the quantum well structure, dQWk is the thickness of the kth quantum well, nQW is the refractive index of the quantum wells, J is the total number of barriers in the quantum well structure, dBAR j is the thickness of the jth barrier, and nBAR is the refractive index of the barriers.
n eff=((Σk=1 K d QW
where K is the total number of quantum wells in the quantum well structure, dQW
In some configurations, the geometry of the laser cavity may satisfy boundary conditions so that two optical modes are resonant in the laser cavity. These optical modes have nearly the same wavelength. In these configurations, it can be helpful to include phase shift layers in the laser structure to reduce the possibility of these competitive optical modes. These phase shift layers operate to provide single mode operation in many cases.
Two example SEL structures (examples 4 and 5) are discussed below and are illustrated in FIGS. 17-24 . These examples illustrate asymmetrical quantum well structures as well as phase shift layers. In examples 4 and 5, a number of quantum well structures are disposed on a substrate and the lasing wavelength is λ=266 nm. In each example, the quantum well thicknesses are selected to be about 5 nm with 50% Al composition in the quantum wells and with 60% Al composition in the barriers. Spacer layers may be disposed between quantum well structures. The spacer layers have 100% Al composition.
In the illustrated example, the SEL includes a substrate or template 1822 comprising AlN and having a refractive index of 2.319 at 266 nm, a physical thickness of 10000 Å, and an optical thickness of 8.718λ. The SEL includes:
1. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
2. Al0.5Ga0.5N quantum well (1825, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
3. Al0.6Ga0.4N thick barrier (1832, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness 154.47 Å (3×51.49 Å), and an optical thickness of 0.15λ (3×0.05λ);
4. AlN spacer layer (1826, FIG. 18 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 286.8 Å, and an optical thickness of 0.25λ.
Layers 1-4 are repeated 9 times followed by:
5. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
6. Al0.5Ga0.5N quantum well (1825, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
7. Al0.6Ga0.4N thick barrier (1832, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness 154.47 Å (3×51.49 Å), and an optical thickness of 0.15λ (3×0.05λ).
The first series 1801 of single quantum well structures comprises layers 1-4 (9 times) and layers 5-7. The first series 1801 of single quantum well structures is followed by:
8. AlN phase shift element (1823-1, FIG. 18 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 143.4 Å, and an optical thickness of 0.125λ;
9. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
10. Al0.5Ga0.5N quantum well (1825, FIG. 18 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
11. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
12. Al0.5Ga0.5N quantum well (1825, FIG. 18 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
13. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
14. AlN spacer layer (1826, FIG. 18 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 286.8 Å, and an optical thickness of 0.25λ.
Layers 9-14 are repeated nine times, followed by:
Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
15. Al0.5Ga0.5N quantum well (1825, FIG. 18 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
16. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
17. Al0.5Ga0.5N quantum well (1825, FIG. 18 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
18. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ.
The series 1803 of double quantum well structures includes layer 9-14 (repeated 9 times and layers 15-19. The series of double quantum well structures is followed by:
19. AlN phase shift element (1823-2, FIG. 18 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 143.4 Å, and an optical thickness of 0.125λ;
20. Al0.6Ga0.4N thick barrier (1832, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness 154.47 Å (3×51.49 Å), and an optical thickness of 0.15λ (3×0.05λ);
21. Al0.5Ga0.5N quantum well (1825, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
22. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ;
23. AlN spacer layer (1826, FIG. 18 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 286.8 Å, and an optical thickness of 0.25λ.
Layers 20-23 are repeated 9 times followed by:
24. Al0.6Ga0.4N thick barrier (1832, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness 154.47 Å (3×51.49 Å), and an optical thickness of 0.15λ (3×0.05λ).
25. Al0.5Ga0.5N quantum well (1825, FIG. 13 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 47.28 Å, and an optical thickness of 0.05λ;
26. Al0.6Ga0.4N thin barrier (1831, FIG. 18 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 51.49 Å, and an optical thickness of 0.05λ.
The second series 1802 of single quantum well structures comprises layers 20-23 (repeated 9 times) plus layers 24-25.
In the illustrated example, the SEL includes a substrate or template 2222 comprising AlN and having a refractive index of 2.319 at 266 nm, a physical thickness of 10000 Å, and an optical thickness of 8.718λ. The SEL includes:
1. Al0.6Ga0.4N thick barrier (2231, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 434.3 Å, and an optical thickness of 0.425λ;
2. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
3. Al0.6Ga0.4N thin barrier (1232, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness 51.1 Å and an optical thickness of 0.05λ;
4. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
5. Al0.6Ga0.4N medium barrier (2233, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 178.9 Å, and an optical thickness of 0.175λ;
6. AlN spacer layer (2226, FIG. 22 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 284.6 Å, and an optical thickness of 0.25λ.
The first series of double quantum well structures comprises layers 1-6 repeated 15 times. Layers 1-6 repeated 15 times are followed by:
7. Al0.6Ga0.4N thick barrier (2231, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 434.3 Å, and an optical thickness of 0.425λ;
8. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
9. Al0.6Ga0.4N thin barrier (1232, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness 51.1 Å and an optical thickness of 0.05λ;
10. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
11. Al0.6Ga0.4N medium barrier (2233, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 178.9 Å, and an optical thickness of 0.175λ;
12. Al0.6Ga0.4N medium barrier (2233, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 178.9 Å, and an optical thickness of 0.175λ;
13. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
14. Al0.6Ga0.4N thin barrier (1232, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness 51.1 Å and an optical thickness of 0.05λ;
15. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
16. Al0.6Ga0.4N thick barrier (2231, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 434.3 Å, and an optical thickness of 0.425λ;
17. AlN spacer layer (2226, FIG. 22 ) having a refractive index of 2.319 at 266 nm, a physical thickness of 284.6 Å, and an optical thickness of 0.25λ.
Layers 12-17 are repeated 15 times followed by:
18. Al0.6Ga0.4N medium barrier (2233, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 178.9 Å, and an optical thickness of 0.175λ;
19. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
20. Al0.6Ga0.4N thin barrier (1232, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness 51.1 Å and an optical thickness of 0.05λ;
21. Al0.5Ga0.5N quantum well (2225, FIG. 22 ) having a refractive index of 2.813 at 266 nm, a physical thickness of 46.92 Å, and an optical thickness of 0.05λ;
22. Al0.6Ga0.4N thick barrier (2231, FIG. 22 ) having a refractive index of 2.583 at 266 nm, a physical thickness of 434.3 Å, and an optical thickness of 0.425λ.
The second series of double quantum well structures comprises the last 14 repetitions of layers 12-17 plus layers 18-22. The phase shift layer comprises layers 7-11 plus the first repetition of layers 12-17. FIG. 24 is a graph of the reflectivity of the structure of FIG. 21 showing greater than 99λ reflectivity at 266 nm.
In some embodiments, the DFB active zone as described herein can be used alone, without additional reflectors or gain elements. With a sufficient number of optical pairs, sufficient refractive index contrast between optical pairs, and sufficient number of gain structures, the DFB active zone can provide both acceptable optical feedback and optical gain for the DFB SEL, even when no additional reflectors and/or gain structures are employed.
In other embodiments, the DFB active zone may be used in conjunction with one or more additional reflectors, as illustrated by the schematic diagrams of FIGS. 25-27 . FIG. 25 depicts an additional reflector 2551 disposed at one surface of the DFB active zone. This optional additional reflector 2551 may comprise a DBR having a number of optical pairs that provide additional reflectivity for the laser structure 2500. For example, the optical pairs may comprise alternating lower refractive index/higher refractive index layers of an epitaxially grown semiconductor material, such as AlN/AlGaN and/or GaN/AlInN. Each layer of the optical pairs may have a geometrical thickness of λlase/4n, where n is the refractive index of the layer, and is non-absorptive for the lasing emission wavelength λlase. These optical pairs do not include quantum wells or other gain media, and thus provide only optical feedback and no optical gain.
In yet another exemplary configuration 900, shown in FIG. 27 , two types of DBRs may be disposed at one or both sides of the DFB active zone, as shown in FIG. 927 . FIG. 27 includes a first optional reflector 2751 disposed at one side, e.g., the bottom side of the DFB active zone 2730 and second and third optional reflectors 2752, 2753 disposed at an opposite side, e.g., the top side of the DFB active zone 2730. It will be understood that the double top reflectors 2752, 2753 may be used without the bottom reflector 2751, the bottom reflector 2751 may be used without the double top reflectors 2752, 2753 and/or one or more reflectors in addition to reflector 2751 may be disposed at the bottom of the DFB active zone. When double reflectors 2752, 2753 are used, the double reflectors may include at least one epitaxially grown semiconductor DBR, e.g., reflector 2752, and one deposited DBR comprising dielectric layers, e.g., reflector 2753.
As previously discussed in connection with FIG. 1 , an excitation source can be used to excite the DFB active zone. In some cases, multiple sources 2801-2804 can be used, as schematically illustrated in FIG. 28 . In some embodiments, the excitation sources 2801-2804 can be light sources that provide light to optically pump the DFB active zone 130. The pump light may be incident on the top surface of the laser, as illustrated in FIG. 1 , and/or the semiconductor heterostructure may be etched to form a mesa structure 2800 as shown in FIG. 28 with the light emitted from the pump sources 2801-2804 incident on the sides of the mesa. The mesa structure may be formed using chemical assisted ion beam etching (or other appropriate process) to etch away portions of the heterostructure, yielding a mesa structure 2800 having, for instance, a diameter of about 100 μm with an exposed sidewall. The mesa structure allows for a large solid angle to be accessed for pumping with pump sources 2801-2804 (e.g., high-brightness diode lasers). The light output of the laser diodes is collimated and focused onto the pillar like semiconductor mesa 2800. In various embodiments, the cross-section of mesa (viewed axially) may be circular, or may have many other rectangular and non-rectangular cross sections.
Referring back to FIGS. 4 , 8, 12, 18, and 21, for example, it can be noted that in some cases the electric field within the DFB active zone fluctuates between periods of higher electric field magnitude and periods of lower electric field magnitude. The DFB active zone can be arranged to take advantage of these fluctuations by placing quantum well structures at the locations within the DFB active zone having a higher electric field magnitude and/or by placing DBR pairs at locations within the DFB active zone having lower electric field magnitude. FIG. 29 illustrates another possible embodiment for the DFB active zone wherein optical pairs that include quantum well structure and spacer layers are not uniformly used throughout the DFB active zone. In this scenario, the DFB active zone includes at least some optical pairs comprising a no-gain, high refractive index layer and a spacer layer. For example, the optical pairs comprising the quantum well structure and spacer layers may be disposed at locations within the DFB active zone having a higher electric field and the optical pairs comprising the no-gain, high refractive index layer and a spacer layer may be disposed at locations within the DFB active zone having a lower electric field.
Systems, devices, or methods disclosed herein may include one or more of the features, structures, methods, or combinations thereof described herein. For example, a device or method may be implemented to include one or more of the features and/or processes described herein. It is intended that such device or method need not include all of the features and/or processes described herein, but may be implemented to include selected features and/or processes that provide useful structures and/or functionality.
In the following detailed description, numeric values and ranges are provided for various aspects of the implementations described. These values and ranges are to be treated as examples only, and are not intended to limit the scope of the claims. For example, embodiments described in this disclosure can be practiced throughout the disclosed numerical ranges. In addition, a number of materials are identified as suitable for various facets of the implementations. These materials are to be treated as exemplary, and are not intended to limit the scope of the claims. The foregoing description of various embodiments has been presented for the purposes of illustration and description and not limitation. The embodiments disclosed are not intended to be exhaustive or to limit the possible implementations to the embodiments disclosed. Many modifications and variations are possible in light of the above teaching.
Claims (20)
1. A semiconductor surface emitting laser (SEL), comprising an active zone including quantum well structures separated by spacer layers, the quantum well structures configured to provide optical gain for the SEL at a lasing wavelength, λlase, each quantum well structure and an adjacent spacer layer configured to form an optical pair of a distributed Bragg reflector (DBR), the active zone including a plurality of the DBR optical pairs and configured to provide optical feedback for the SEL at λlase, wherein the optical feedback provided by the active zone is sufficient to cause the SEL to operate as a laser.
2. The SEL of claim 1 , wherein λlase is in a range between about 250 nm and about 550 nm.
3. The SEL of claim 1 , further comprising one of:
an optical pump source configured to emit pump light at pump wavelength, λpump, the pump source arranged to optically pump the SEL; and
an electron beam source configured to emit an electron beam as excitation source for the active zone of the SEL.
4. The SEL of claim 1 further comprising a pump source configured to provide in-well pumping of the SEL.
5. The SEL of claim 1 , further comprising a pump source configured to provide barrier pumping of the SEL.
6. The SEL of claim 1 , wherein the active zone comprises one or more mesa structures and further comprising an optical pump source configured to optically pump the SEL side walls of the one or more mesas structures.
7. The SEL of claim 1 , further comprising one or more additional DBRs that do not provide optical gain disposed adjacent to the active zone.
8. The SEL of claim 7 , wherein the one or more additional DBRs comprise only one DBR.
9. The SEL of claim 1 , wherein the active zone includes one or more first optical pairs that provide the optical gain and the optical feedback interspersed with one or more second optical pairs that provide the optical gain without providing the optical feedback.
10. The SEL of claim 1 , wherein the active zone includes one or more first optical pairs that provide the optical gain and the optical feedback interspersed with one or more third optical pairs that provide the optical feedback without providing the optical gain.
11. The SEL of claim 1 , wherein the active zone includes at least one phase shift element, the phase shift element configured to shift a phase of an optical mode present within the active zone during operation of the SEL.
12. The SEL of claim 11 , wherein the phase shift element comprises an optical gain element.
13. A surface emitting laser (SEL), comprising an active zone including quantum well structures, each quantum well structure including one or more quantum wells comprising AlxGa1-xN, the quantum well structures separated by spacer layers comprising AlyGa1-yN, where y>x, the quantum well structures configured to provide optical gain for the SEL at a lasing wavelength, λlase, each quantum well structure and an adjacent spacer layer configured to form an optical pair of a distributed Bragg reflector (DBR), the quantum well structure configured to provide a high refractive index portion of the optical pair and the spacer layer configured to provide a low refractive index portion of the optical pair, the DBR including a plurality of the optical pairs and configured to provide optical feedback for the SEL at λlase, wherein the optical feedback provided by the active zone is sufficient to cause the SEL to operate as a laser.
14. The SEL of claim 13 , wherein a number of the optical pairs is sufficient to provide a reflectivity of greater than about 98% at λlase.
15. The SEL of claim 13 , wherein the active zone is epitaxially grown on a bulk AlN substrate.
16. A semiconductor surface emitting laser (SEL), comprising an active zone including quantum well structures separated by spacer layers, the quantum well structures configured to provide optical gain for the SEL at a lasing wavelength, λlase, each quantum well structure and an adjacent spacer layer configured to form an optical pair of a distributed Bragg reflector (DBR), the active zone including a plurality of the DBR optical pairs and configured to provide optical feedback for the SEL at λlase, wherein at least some of the quantum well structures are asymmetrical, each asymmetrical quantum well structure having one or more quantum wells and one or more barriers and the one or more quantum wells are not centered between spacer layers adjacent to the quantum well structure, wherein the optical feedback provided by the active zone is sufficient to cause the SEL to operate as a laser.
17. The SEL of claim 16 , wherein substantially all of the quantum well structures are asymmetrical.
18. The SEL of claim 16 , further comprising one or more additional DBRs that do not provide optical gain disposed adjacent to the active zone.
19. The SEL of claim 18 , wherein the one or more additional DBRs comprise only one DBR.
20. A semiconductor surface emitting laser (SEL), comprising an active zone including:
means for providing optical gain for the SEL at a lasing wavelength, λlase; and
means for providing optical feedback for the SEL at λlase, wherein the means for providing optical gain and the means for providing optical feedback are distributed throughout the active zone, wherein the optical feedback provided by the active zone is sufficient to cause the SEL to operate as a laser.
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US10135227B1 (en) * | 2017-05-19 | 2018-11-20 | Palo Alto Research Center Incorporated | Electron beam pumped non-c-plane UV emitters |
US20210050712A1 (en) * | 2019-08-15 | 2021-02-18 | Axsun Technologies, Inc. | Tunable VCSEL with combined gain and DBR mirror |
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